CN107527876A - Packaging structure - Google Patents
Packaging structure Download PDFInfo
- Publication number
- CN107527876A CN107527876A CN201611224879.3A CN201611224879A CN107527876A CN 107527876 A CN107527876 A CN 107527876A CN 201611224879 A CN201611224879 A CN 201611224879A CN 107527876 A CN107527876 A CN 107527876A
- Authority
- CN
- China
- Prior art keywords
- lead frame
- substrate
- encapsulating structure
- pedestal
- structure according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 109
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 91
- 239000000203 mixture Substances 0.000 claims description 32
- 238000007747 plating Methods 0.000 claims description 18
- 230000002093 peripheral effect Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 239000003989 dielectric material Substances 0.000 claims description 11
- 239000003292 glue Substances 0.000 claims description 9
- -1 polyethylene Polymers 0.000 claims description 9
- 229920000728 polyester Polymers 0.000 claims description 8
- 239000002905 metal composite material Substances 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- XLJMAIOERFSOGZ-UHFFFAOYSA-N cyanic acid Chemical compound OC#N XLJMAIOERFSOGZ-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- 229920000089 Cyclic olefin copolymer Polymers 0.000 claims description 5
- 239000004713 Cyclic olefin copolymer Substances 0.000 claims description 5
- 239000004952 Polyamide Substances 0.000 claims description 5
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229920002647 polyamide Polymers 0.000 claims description 5
- 229920001707 polybutylene terephthalate Polymers 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 5
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 4
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 4
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 229920002292 Nylon 6 Polymers 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229920001568 phenolic resin Polymers 0.000 claims description 3
- 239000005011 phenolic resin Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229920002492 poly(sulfone) Polymers 0.000 claims description 3
- 229920005668 polycarbonate resin Polymers 0.000 claims description 3
- 239000004431 polycarbonate resin Substances 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 2
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 claims description 2
- 238000007334 copolymerization reaction Methods 0.000 claims description 2
- 229920006380 polyphenylene oxide Polymers 0.000 claims description 2
- 239000010426 asphalt Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 10
- 230000032798 delamination Effects 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- 238000000465 moulding Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 230000001010 compromised effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 125000005396 acrylic acid ester group Chemical group 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011469 building brick Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
Abstract
The invention provides a packaging structure which comprises a substrate, a sensing chip, a base, a lead frame, a plurality of through holes and a patterned circuit layer. The substrate comprises a component arrangement area and a plurality of electrode contacts. The sensing chip is arranged in the component arrangement area and is electrically connected with the electrode contact through the patterned circuit layer. The base covers the substrate through the joint mask and comprises an accommodating groove, a step part, an extending inclined plane and a plurality of electrodes. The step part protrudes out of the bottom surface of the accommodating groove. The extending inclined plane extends from the top surface of the step part to the joint surface. The electrodes are arranged on the joint surface and are respectively electrically connected with the electrode contacts. The sensing chip is positioned in the accommodating groove. The lead frame is respectively arranged on the base and the substrate. The via hole penetrates through the step part and is electrically connected to the lead frame. The patterned circuit layer is arranged on the extending inclined plane to electrically connect the via hole and the electrode. The packaging structure has simple processing steps and thinner whole thickness.
Description
Technical field
The present invention relates to a kind of encapsulating structure, and more particularly to a kind of encapsulating structure of sensing chip.
Background technology
With the development of science and technology electronic product is without the trend development not towards lightweight and miniaturization.By taking microphone as an example,
MEMS sensing chip (MEMS sensors) has been widely used in this field.Traditional microphone includes microcomputer
Electric system sensing chip, to drive the driving chip of MEMS sensing chip and to carry MEMS sensing
The circuit board of chip and driving chip.Circuit board is in addition to conductive layer and dielectric layer, also with some conductive through holes
(conductive through via), and the driving chip in microphone would generally be electrically connected with these conductive through holes.
In the prior art, producer can first make sensing component respectively and to carry the wiring board of electronic building brick.It
Afterwards, then by sensing component encapsulation in the circuit board, to form sensing component encapsulating structure.This practice is not only time-consuming, and feels
The integral thickness for surveying assembly encapsulation structure is not easy to reduce.Therefore, existing sensing component encapsulation how is improved, actually developer institute
One of the target to be reached.
The content of the invention
The present invention provides a kind of encapsulating structure, and its fabrication steps is simple and integral thickness is relatively thin.
The present invention a kind of encapsulating structure include substrate, sensing chip, pedestal, the first lead frame, multiple first via holes,
First patterned line layer, the second lead frame, multiple second via holes and the second patterned line layer.Substrate is set including component
Area and multiple electrodes contact.Electrode contact is arranged at the side of component setting area.Sensing chip is arranged at component setting area simultaneously
It is electrically connected with driving chip and electrode contact.Pedestal is covered on substrate and including containing groove, extension inclined-plane with composition surface
And multiple electrodes.Extension inclined-plane is connected between the bottom surface of containing groove and composition surface.Electrode is arranged at composition surface and difference
It is electrically connected with electrode contact.Sensing chip is located in the corresponding region of containing groove.First wire erection is placed in pedestal.First
Via hole is through pedestal and is electrically connected to the first lead frame.First patterned line layer is arranged at extension inclined-plane, containing groove
Bottom surface and composition surface on to be electrically connected with the first via hole and electrode.Second wire erection is placed in substrate.Second via hole
Through substrate and it is electrically connected to the second lead frame.Second patterned line layer is arranged at substrate and is electrically connected to the second conducting
Hole and electrode contact.
In one embodiment of this invention, above-mentioned pedestal includes end difference, protrudes from the bottom surface of containing groove, and extension is oblique
Face extends to composition surface by the top surface of end difference, and the first via hole runs through end difference to be electrically connected with the first lead frame.
In one embodiment of this invention, the material of above-mentioned pedestal and substrate includes alternative plating dielectric material, its
Include non-conductive metal composite.
In one embodiment of this invention, above-mentioned alternative plating dielectric material includes epoxy resin, polyester, acrylic acid
Ester, fluorine element polymer, polyphenylene oxide, polyimides, phenolic resin, polysulfones, silicon element polymer, BT resins
(Bismaleimide-Triazine modified epoxy resin), cyanic acid polyester, polyethylene, polycarbonate resin, third
Alkene nitrile-BS, PET (PET), polybutylene terephthalate (PBT), liquid crystal
Macromolecule (liquid crystal polyester, LCP), polyamide (PA), nylon 6, kematal (POM), polyphenylene sulfide
Ether (PPS) or cyclic olefin copolymer (COC).
In one embodiment of this invention, the metal in above-mentioned non-conductive metal composite include zinc, copper, silver, gold,
Nickel, palladium, platinum, cobalt, rhodium, iridium, indium, iron, manganese, aluminium, chromium, tungsten, vanadium, tantalum, titanium or its any combination.
In one embodiment of this invention, above-mentioned encapsulating structure also includes driving chip, is arranged on substrate, drives core
Piece is electrically connected to sensing chip and electrode contact.
In one embodiment of this invention, above-mentioned sensing chip includes MEMS
(microelectromechanical systems, MEMS) sensing chip, driving chip include application specific integrated circuit
(application specific integrated circuit,ASIC)。
In one embodiment of this invention, above-mentioned substrate also includes multiple electrodes opening, and electrode contact is embedded in respectively
Electrode opening, and the upper surface of electrode contact is less than the composition surface of substrate.
In one embodiment of this invention, above-mentioned electrode protrudes from composition surface, with and and electrode chimeric with electrode opening
Contacts.
In one embodiment of this invention, outsides of the second above-mentioned lead frame including multiple electric connection sensing chips connect
Pad.
In one embodiment of this invention, outsides of the first above-mentioned lead frame including multiple electric connection sensing chips connect
Pad, pedestal expose external connecting pads relative to the back side on composition surface.
In one embodiment of this invention, the second above-mentioned lead frame covering substrate deviates from the back side of pedestal.
In one embodiment of this invention, above-mentioned encapsulating structure also includes perforation, through substrate and the second lead frame, with
Expose portion sensing chip.
In one embodiment of this invention, the second above-mentioned lead frame also includes baffle ring, around perforation and with perforation
Outer peripheral edge maintains spacing.
In one embodiment of this invention, above-mentioned encapsulating structure also includes substrate ground/screen layer and pedestal ground connection/screen
Layer is covered, the peripheral side of substrate ground/screen layer covering substrate simultaneously connects the second lead frame, pedestal ground connection/screen layer covering base
The peripheral side of seat and/or the inner surface of containing groove, and connect the first lead frame.
In one embodiment of this invention, the second above-mentioned lead frame also includes multiple stepped throughholes, be through to this
Two lead frames, and substrate also includes multiple stepped projections to be fitted together to corresponding stepped throughhole, wherein each stepped throughhole
Connecting portion including top cover portion and connection top cover portion, the minimum diameter of top cover portion are more than the maximum gauge of connecting portion.
In one embodiment of this invention, outsides of the second above-mentioned lead frame including multiple electric connection sensing chips connect
Pad.
In one embodiment of this invention, the first above-mentioned wire erection is placed in the back side relative to composition surface, and completely
Cover the back side of the first lead frame.
In one embodiment of this invention, above-mentioned encapsulating structure, the first lead frame also include multiple stepped throughholes, passed through
Wear to the first lead frame, and pedestal also includes multiple stepped projections to be fitted together to corresponding stepped throughhole, wherein each ladder
Shape through hole includes top cover portion and connects the connecting portion of top cover portion, and the minimum diameter of top cover portion is more than the maximum gauge of connecting portion.
In one embodiment of this invention, above-mentioned encapsulating structure also includes adhesion glue material, and the adhesion glue material can be non-leads
Electric glue or conducting resinl, are arranged between composition surface and substrate, to be bonded pedestal and substrate.
In one embodiment of this invention, the bottom surface of the first above-mentioned patterned line layer is less than extension inclined-plane and pedestal
Top surface, and the bottom surface of the second patterned line layer be less than substrate top surface.
Circuit is operatively connected to the engagement of pedestal based on above-mentioned, of the invention encapsulating structure using the design of end difference
Face and the back side on relative composition surface, the design flexibility of circuit is lifted, also, end difference can be used to the driving core of accommodating encapsulating structure
Piece, lift the space availability ratio of encapsulating structure.Furthermore pedestal of the invention and/or the material of substrate include alternative electroplate
Dielectric material, patterned circuit is formed directly to change plating and plating directly on a surface in it using the characteristic of its alternative plating
The conductive structures such as layer, the first via hole or connection pad.Also, the patterned line layer formed accordingly may conform to the mark of microfine circuit
Standard, additionally provide the design flexibility of the connection line on encapsulating structure.Also, alternative plating dielectric material can pass through molding
(molding) mode is shaped, therefore to having larger design flexibility in its thickness and external form, so can easily by pedestal/
The thickness control of substrate is below 100 microns, and therefore, encapsulating structure of the invention can not only lift its design flexibility, more can be light
Easily meet the standard of fine rule road, and can effectively simplify fabrication steps and reduce the integral thickness of encapsulating structure.
For features described above of the invention and advantage can be become apparent, special embodiment below, and accompanying drawing shown in cooperation
It is described in detail below.
Brief description of the drawings
Figure 1A is a kind of diagrammatic cross-section of encapsulating structure according to one embodiment of the invention；
Figure 1B is a kind of diagrammatic cross-section of encapsulating structure according to another embodiment of the present invention；
Fig. 2 is the upper schematic diagram of the pedestal and substrate according to one embodiment of the invention；
Fig. 3 is the schematic diagram of the pedestal according to one embodiment of the invention；
Fig. 4 is the diagrammatic cross-section of the pedestal according to one embodiment of the invention；
Fig. 5 is the diagrammatic cross-section of the substrate according to one embodiment of the invention；
Fig. 6 is the schematic diagram of the substrate according to one embodiment of the invention；
Fig. 7 is a kind of schematic bottom perspective view of encapsulating structure according to one embodiment of the invention；
Fig. 8 is a kind of diagrammatic cross-section of encapsulating structure according to one embodiment of the invention；
Fig. 9 is a kind of upper schematic diagram of lead frame according to one embodiment of the invention；
Figure 10 is the diagrammatic cross-section of Fig. 9 lead frame；
Figure 11 is another diagrammatic cross-section of Fig. 9 lead frame；
Figure 12 is the diagrammatic cross-section that Figure 11 lead frame and substrate are combined；
Figure 13 is the upper schematic diagram that Figure 12 lead frame and substrate are combined.
Description of reference numerals：
100、100a：Encapsulating structure
110：Substrate
112：Electrode contact
114：Electrode opening
120：Sensing chip
130：Pedestal
132：Composition surface
134：Containing groove
136：End difference
138：Extend inclined-plane
139：Electrode
140：First lead frame
144、182：External connecting pads
142、184：Stepped throughhole
142a、184a：Top cover portion
142b、184b：Connecting portion
150：First via hole
160：First patterned line layer
170：Driving chip
180：Second lead frame
186：Baffle ring
190：Substrate ground/screen layer
192：Pedestal ground connection/screen layer
200：Mainboard
G1：Spacing
GL：Adhesion glue material
H1：Perforation
Embodiment
Figure 1A is a kind of diagrammatic cross-section of encapsulating structure according to one embodiment of the invention.Figure 1B is according to the present invention
Another embodiment a kind of encapsulating structure diagrammatic cross-section.Fig. 2 is the pedestal and substrate according to one embodiment of the invention
Upper schematic diagram.Referring to Figure 1A, Figure 1B to Fig. 2, in the present embodiment, encapsulating structure 100 includes substrate 110, passed
Sense chip 120, pedestal 130, the first lead frame 140, multiple first via holes 150, the first patterned line layer 160, second are led
Coil holder 180, the patterned line layer 188 of multiple second via holes 189 and second.Substrate 110 includes component setting area and more
Individual electrode contact 112.The side for being arranged at component setting area as shown in Figure 2 of electrode contact 112.Sensing chip 120 is arranged at
Component setting area is simultaneously electrically connected with driving chip 170 and electrode contact 112.Second via hole 189 is simultaneously electrical through substrate 110
It is connected to the second lead frame 180, and the second patterned line layer 188 is as shown in Figure 2 is arranged at substrate 110 and is electrically connected to
Second via hole 189 and electrode contact 112.Being covered with composition surface 132 in substrate 110 as illustrated in figures 1A and ib of pedestal 130
On, wherein, pedestal 130 includes containing groove 134, extension inclined-plane 138 and multiple electrodes 139.Extend such as Figure 1A institutes of inclined-plane 138
The bottom surface by containing groove 134 shown extends to the composition surface 132 of pedestal 130.First lead frame 140 is arranged at pedestal 130.The
One via hole 150 is through pedestal and is electrically connected to the first lead frame 140.
In the present embodiment, what pedestal 130 can also be as shown in Figure 1B includes end difference 136, and end difference 136 protrudes from appearance
Put the bottom surface of groove 134.Also, the top surface by end difference 136 of extension inclined-plane 138 as shown in Figure 1B extends to pedestal 130
Composition surface 132.So configured, the first via hole 150 can run through end difference 136 to be electrically connected to the first lead frame 140.It must say
Bright, the alternative configuration of end difference 136 of the present embodiment, the present invention is not limited thereto.
In the present embodiment, electrode 139 is arranged at composition surface 132 and the electrode contact 112 with substrate 110 electrically connects respectively
Connect.In the present embodiment, substrate 110 may include multiple electrodes opening 114, and electrode contact 112 is embedded in electrode opening respectively
114, and the upper surface of electrode contact 112 is less than the composition surface of substrate 110.Correspondingly, the electrode 139 of pedestal 130 protrudes from
Composition surface 132, with chimeric with electrode opening 114, and contacted with electrode contact 112, to be electrically connected.In the present embodiment
In, sensing chip 120 can be arranged on substrate 110 and in the corresponding region of containing groove 134 as shown in Figure 1.First
Lead frame 140 is then arranged at pedestal 130, and the first via hole 150 then runs through end difference 136 to be electrically connected to the first lead frame
140.In this way, the first patterned line layer 160 is arranged on extension inclined-plane 138 to be electrically connected with the first via hole 150 and electrode
139。
Fig. 3 is the schematic diagram of the pedestal according to one embodiment of the invention.Fig. 4 is the base according to one embodiment of the invention
The diagrammatic cross-section of seat.Referring to Fig. 3 and Fig. 4, in the present embodiment, the material of pedestal 130 and/or substrate 110 includes
Alternative plating dielectric material, it includes non-conductive metal composite.In this way, the encapsulating structure 100 of the present embodiment is available
The characteristic of the alternative plating of alternative plating dielectric material, directly in formation on its surface as shown in Figure 1A, Figure 1B and Fig. 2
The first patterned line layer 160, make the first patterned line layer 160 be directly arranged at pedestal 130 extension inclined-plane 138, hold
Put on the bottom surface and composition surface 132 of groove 134, and the via hole 150 of electrode 139 and first corresponding to electric connection.In this reality
Apply in example, encapsulating structure 100 may also include adhesion glue material GL, and it can be non-conductive adhesive or conducting resinl, be arranged at composition surface 132 with
Between substrate 110, to be bonded pedestal 130 and substrate 110.
Specifically, alternative plating dielectric material may include epoxy resin, polyester, acrylate, fluorine element polymer, poly-
Phenylene oxide, polyimides, phenolic resin, polysulfones, silicon element polymer, BT resins (Bismaleimide-Triazine
Modified epoxy resin), cyanic acid polyester, polyethylene, polycarbonate resin, acrylonitrile-butadiene-styrene (ABS) copolymerization
Thing, PET (PET), polybutylene terephthalate (PBT), liquid crystal polymer (liquid crystal
Polyester, LCP), polyamide (PA), nylon 6, kematal (POM), polyphenylene sulfide (PPS) or cyclic olefin copolymer
(COC) etc..Metal in non-conductive metal composite then may include zinc, copper, silver, gold, nickel, palladium, platinum, cobalt, rhodium, iridium, indium,
Iron, manganese, aluminium, chromium, tungsten, vanadium, tantalum, titanium or its any combination.
Specifically, optionally electroplated in the extension inclined-plane 138 of pedestal 130 and form the first patterned line layer 160
The step of may include：With laser along the road for being intended to be formed the first patterned line layer 160 on the extension inclined-plane 138 of pedestal 130
Footpath carves the circuit groove of corresponding first patterned line layer 160, breaks the non-conductive metal composite on this circuit groove
Bad and release has the heavy metal nucleus of high activity to reducing metalization, then, then to the alternative plating dielectric after laser
Material carries out selective electroplating, and the first patterned line layer 160 is formed directly to change plating and plating on circuit groove.Therefore,
The first patterned line layer 160 formed according to above-mentioned processing procedure is embedded in the extension inclined-plane 138 of pedestal 130, and pedestal 130 prolongs
Stretch the upper surface that inclined-plane 138 exposes the first patterned line layer 160.Also, because the present embodiment is directly in base using laser
The circuit groove of corresponding first patterned line layer 160 is carved on the extension inclined-plane 138 of seat 130, on circuit groove directly
Change plating and plating and form the first patterned line layer 160, therefore, the upper surface of the first patterned line layer 160 can be less than base
The extension inclined-plane 138 of seat 130, or the copline of extension inclined-plane 138 with pedestal 130.In the present embodiment, the first patterned lines
The bottom surface of road floor 160 is less than extension inclined-plane 138 and the top surface of pedestal 130.Similarly, the bottom of the second patterned line layer 188
Face is less than the top surface of substrate 110.Also, in this way directly in the various patterned circuits formed on the surface of pedestal 130
The upper surface of layer can all be less than the surface of pedestal 130, or the surface copline with pedestal 130.Certainly, the present embodiment only to
Illustrate and it is not so limited.
Also, the present embodiment can using the mode of die forming come mold the pedestal 130 to be formed in encapsulating structure 100 and/
Or substrate 110, therefore, the thickness and shape of pedestal 130 and/or substrate 110 can freely adjust according to product demand, therefore, this
The encapsulating structure 100 of embodiment can not only simplify processing procedure, lift the elasticity of design, also, the maximum gauge of encapsulating structure 100 is more
Can effectively it reduce.
Fig. 5 is the diagrammatic cross-section of the substrate according to one embodiment of the invention.Fig. 6 is according to one embodiment of the invention
Substrate schematic diagram.Referring to Figure 1A, Figure 1B, Fig. 5 and Fig. 6, specifically, the encapsulating structure 100 of the present embodiment is also
It may include driving chip 170, it is arranged on substrate 110 and corresponding end difference 136, and driving chip 170 can be for example by a plurality of
Wire is electrically connected to sensing chip 120 and electrode contact 112.Specifically, in the present embodiment, encapsulating structure 100 can
For MEMS microphone package structure, in this way, sensing chip 120 can be then MEMS (microelectromechanical
Systems, MEMS) sensing chip, and driving chip 170 can be then to drive the application specific integrated circuit of MEMS sensing chips
(application specific integrated circuit,ASIC).Encapsulating structure 100 may also include perforation H1, and it is passed through
Substrate 110 is worn, with expose portion sensing chip 120.In the present embodiment, perforation H1 can be the sound of MEMS microphone package structure
Hole.Certainly, the present embodiment is only to for example, the present invention is not intended to limit the application of encapsulating structure 100.
Fig. 7 is a kind of schematic bottom perspective view of encapsulating structure according to one embodiment of the invention.It refer to Figure 1A, figure
1B and Fig. 7, in the present embodiment, the first lead frame 140 may include the external connecting pads 144 of multiple electric connection sensing chips 120,
Pedestal 130 exposes external connecting pads 144 relative to the back side 133 on composition surface 132.In this way, encapsulation knot as illustrated in figures 1A and ib
Structure 100 can be electrically connected to external electronic components by the external connecting pads 144 on pedestal 130, such as：Mainboard.
In the present embodiment, the second lead frame 180 is arranged at substrate 110 and the second lead frame 180 can be metal level, so that
Few most of covering substrate 110 deviates from the back side of pedestal 130.Foregoing perforation H1 then runs through the lead frame of substrate 110 and second
180, with expose portion sensing chip 120.In addition, in the present embodiment, encapsulating structure 100 may also include substrate ground/shielding
Layer 190, its as illustrated in figures 1A and ib covering substrate 110 peripheral side and connect the second lead frame 180.In this way, passing
During the encapsulation and use of sense chip 120, when buildup of static electricity to when producing electric discharge phenomena to a certain degree, due to driving chip
170 are electrically connected with the first via hole 150, therefore driving chip 170 is highly susceptible to the influence of static discharge and is compromised, because
This, the second above-mentioned lead frame 180 and substrate ground/screen layer 190 can be used as ground plane or electro-magnetic screen layer to be used, to reduce
The influence of static discharge and electromagnetic interference.Also, pedestal 130 may also include pedestal ground connection/screen layer 192, it covers pedestal 130
Peripheral side and/or containing groove 134 inner surface, with reach ground connection and/or electromagnetic shielding effect.
Specifically, the practice of substrate ground/screen layer 190 can for example first by substrate 110 in a manner of formed in mould shape
Into on the second lead frame 180, and the non conductive metal compound in the material of substrate 110 is metallized using laser.It
Substrate 110 is electroplated again afterwards to form substrate ground/shielding of the peripheral side of electrode contact 112 and covering substrate 110
Layer 190.Pedestal ground connection/screen layer 192 is also available to be made similar in appearance to the above-mentioned practice.
In addition, in order to prevent the lead frame 180 of substrate 110 and second occur delamination (de-lamination) situation, second
Lead frame 180 may also include multiple stepped throughholes 184 as illustrated in figures 1A and ib, be through to the second lead frame 180, its
In, each stepped throughhole 184 includes top cover portion 184a and connects top cover portion 184a connecting portion 184b.Top cover portion 184a is most
Minor diameter is more than connecting portion 184b maximum gauge.In this way, substrate 110 is formed in the second lead frame by formed in mould mode
When on 180, substrate 110 can be inserted in stepped throughhole 184, that is to say, that substrate 110 can correspondingly include multiple stepped convex
Rise with chimeric with corresponding stepped throughhole 184.In this way, encapsulating structure 100 can strengthen substrate by stepped throughhole 184
110 and the second adhesion between lead frame 180, the situation for reducing delamination occur.
Similarly, the first lead frame 140 may also include stepped throughhole 142, and its structure is same as stepped throughhole 184.
In this way, forming pedestal 130 when on the first lead frame 140 by formed in mould mode, pedestal 130 can be inserted stepped logical
In hole 142, with chimeric with corresponding stepped throughhole 142.Encapsulating structure 100 can strengthen base by stepped throughhole 142
Adhesion between the lead frame 140 of seat 130 and first, the situation for reducing delamination occur.
Fig. 8 is a kind of diagrammatic cross-section of encapsulating structure according to one embodiment of the invention.Herein it should be noted that,
The encapsulating structure 100a and Figure 1A and Figure 1B of the present embodiment encapsulating structure 100 are similar, and therefore, the present embodiment continues to use foregoing implementation
The reference numerals and partial content of example, wherein adopting the identical or approximate component that is denoted by the same reference numerals, and eliminate phase
With the explanation of technology contents.Explanation on clipped refers to previous embodiment, and it is no longer repeated for the present embodiment.It please join
According to Fig. 8, explained below for the difference of encapsulating structure 100a and Figure 1A and Figure 1B of the present embodiment encapsulating structure 100.
In the present embodiment, encapsulating structure 100a includes the second lead frame 180, and it is arranged at substrate 110 and including multiple
It is electrically connected with the external connecting pads 182 of sensing chip 120.In this way, encapsulating structure 100a can be as shown in Figure 8 pass through substrate 110
On external connecting pads 182 and be electrically connected to external electronic components, such as：Mainboard 200.Under the configuration of such structure, first
Lead frame 140 is arranged at the back side relative to composition surface 132, and the first lead frame 140 can be metal level, be covered with least most of
The back side of the first lead frame of lid 140.In addition, encapsulating structure 100a may also include pedestal ground connection/screen layer 192, it covers pedestal
130 peripheral side and/or the inner surface of containing groove 134, and connect the first lead frame 140.In this way, in sensing chip 120
Encapsulation and use during, when buildup of static electricity to when producing electric discharge phenomena to a certain degree, due to driving chip 170 and first
Via hole 150 is electrically connected with, therefore driving chip 170 is highly susceptible to the influence of static discharge and is compromised, therefore, above-mentioned
One lead frame 140 and pedestal ground connection/screen layer 192 can be used as ground plane or electro-magnetic screen layer be used, with reduce static discharge and
The influence of electromagnetic interference.Also, substrate 110 may also include substrate ground/screen layer 190, it is completely covered around substrate 110
Effect of the side to reach ground connection and/or be electromagnetically shielded.
Specifically, the practice of pedestal ground connection/screen layer 192 can for example first by pedestal 130 in a manner of formed in mould shape
Into on the first lead frame 140, and the non conductive metal compound in the material of pedestal 130 is metallized using laser.It
Pedestal 130 is electroplated again afterwards to form electrode 139, the first patterned line layer 160 and the peripheral side for covering pedestal 130
And/or pedestal ground connection/screen layer 192 of the inner surface of containing groove 134.Substrate ground/screen layer 190 also using similar in appearance to
The above-mentioned practice is made.
In addition, in order to prevent the first lead frame 140 of pedestal 130 and stratiform from the situation of delamination, the first lead frame 140 occurs
Multiple stepped throughholes 142 as illustrated in figures 1A and ib are may also include, it is arranged at the first lead frame 140, wherein, each ladder
Shape through hole 142 includes top cover portion 142a and connects top cover portion 142a connecting portion 142b.Top cover portion 142a minimum diameter is big
In connecting portion 142b maximum gauge.In this way, pedestal 130 is formed when on the first lead frame 140 by formed in mould mode,
Pedestal 130 can be inserted in stepped throughhole 142, that is to say, that pedestal 130 can correspond to include it is multiple it is stepped projections with it is right
The stepped throughhole 142 answered is chimeric.In this way, encapsulating structure 100a can strengthen pedestal 130 and by stepped throughhole 142
Adhesion between one lead frame 140, the situation for reducing delamination occur.
Similarly, the second lead frame 180 may also include stepped throughhole 184, and its structure is same as stepped throughhole 142.
In this way, forming substrate 110 when on the second lead frame 180 by formed in mould mode, substrate 110 can be inserted stepped logical
In hole 184, with chimeric with corresponding stepped throughhole 184.Encapsulating structure 100a can strengthen base by stepped throughhole 184
Adhesion between the lead frame 180 of plate 110 and second, the situation for reducing delamination occur.
Fig. 9 is a kind of upper schematic diagram of lead frame according to one embodiment of the invention.Figure 10 is Fig. 9 lead frame
Diagrammatic cross-section.Figure 11 is another diagrammatic cross-section of Fig. 9 lead frame.Please also refer to Fig. 9 to Figure 11, specifically, this reality
Applying the second lead frame 180 of example may include multiple multiple stepped throughholes 184 and baffle ring 186 as shown in Figure 9, and it is as schemed
Circular perforation H1 shown in 9 and spacing G1 is maintained with perforation H1 outer peripheral edge, by the setting of baffle ring 186, can prevented
Excessive glue is occurred pass through colloid inflow to form substrate 110 when on the second lead frame 180 by formed in mould mode encapsulating
The problem of in the H1 of hole.
Figure 12 is the diagrammatic cross-section that Figure 11 lead frame and substrate are combined.The lead frame that Figure 13 is Figure 12 is combined with substrate
Upper schematic diagram.It should be noted that in order to become apparent from distinguishing lead frame and substrate, lead frame region in Figure 12 and Figure 13 with
Oblique line indicates.Referring to Figure 12 and Figure 13, in the present embodiment, stepped throughhole 184 can be through to the second lead frame
180, wherein, each stepped throughhole 184 includes top cover portion 184a and connects top cover portion 184a connecting portion 184b.Connecting portion
184b for example can then be located at away from the surface of pedestal 130, and top cover portion positioned at the surface towards pedestal 130, top cover portion 184a
184a minimum diameter is more than connecting portion 184b maximum gauge.In this way, the arrow by formed in mould mode as shown in Figure 12
Head direction encapsulating, to form substrate 110 when on the second lead frame 180, colloid can be inserted in stepped throughhole 184, with shape
Into the chimeric substrate 110, thus the wire of substrate 110 and second can be strengthened each other of the stepped throughhole 184 with the second lead frame 180
Adhesion between frame 180, the situation for reducing delamination occur.In summary, encapsulating structure of the invention setting using end difference
Circuit is operatively connected to the composition surface of pedestal and the back side on relative composition surface by meter, lifts the design flexibility of circuit, also, rank
Terraced portion can be used to the driving chip of accommodating encapsulating structure, lift the space availability ratio of encapsulating structure.In addition, the pedestal of the present invention
And/or the material of substrate includes alternative plating dielectric material, with the characteristic using its alternative plating directly in its surface
Upper directization is plated and electroplates and form the conductive structures such as patterned line layer, via hole or connection pad.Also, the figure formed accordingly
Case line layer may conform to the standard of microfine circuit, additionally provide the design flexibility of the connection line on encapsulating structure.Also, can
Selective electroplating dielectric material can be shaped by way of molding (molding), therefore to having larger set in its thickness and external form
Meter elasticity, and then can be easily by the thickness control of pedestal/substrate below 100 microns, therefore, encapsulating structure of the invention is not only
Its design flexibility can be lifted, can also meet the standard of fine rule road easily, and can effectively simplify fabrication steps and reduce encapsulating structure
Integral thickness.
Although the present invention is disclosed as above with embodiment, so it is not limited to the present invention, any art
Middle tool usually intellectual, without departing from the spirit and scope of the present invention, when a little change and retouching can be made, thus it is of the invention
Protection domain when being defined depending on what right was defined.
Claims (25)
- A kind of 1. encapsulating structure, it is characterised in that including：Substrate, including component setting area and multiple electrodes contact, multiple electrode contacts are arranged at the component setting area Side；Sensing chip, it is arranged at the component setting area and is electrically connected with multiple electrode contacts；Pedestal, covered with composition surface on the substrate and including containing groove, extension inclined-plane and multiple electrodes, the extension inclined-plane Be connected between the bottom surface of the containing groove and the composition surface, multiple electrodes be arranged at the composition surface and respectively with multiple institutes Electrode contact electric connection is stated, the sensing chip is located in the corresponding region of the containing groove；First lead frame, it is arranged at the pedestal；AndMultiple first via holes, through the pedestal and it is electrically connected to first lead frame；AndFirst patterned line layer, be arranged on the extension inclined-plane be electrically connected with multiple first via holes with it is multiple described Electrode；Second lead frame, it is arranged at the substrate；Multiple second via holes, through the substrate and it is electrically connected to second lead frame；AndSecond patterned line layer, it is arranged at the substrate and is electrically connected to multiple second via holes and multiple electrodes Contact.
- 2. encapsulating structure according to claim 1, it is characterised in that the pedestal includes end difference, and it is accommodating recessed to protrude from this The bottom surface of groove, the extension inclined-plane extends to the composition surface by the top surface of the end difference, and multiple first via holes run through The end difference is to be electrically connected with first lead frame.
- 3. encapsulating structure according to claim 1, it is characterised in that the material of the pedestal and the substrate includes alternative Dielectric material is electroplated, including non-conductive metal composite.
- 4. encapsulating structure according to claim 3, it is characterised in that alternative plating dielectric material includes asphalt mixtures modified by epoxy resin Fat, polyester, acrylate, fluorine element polymer, polyphenylene oxide, polyimides, phenolic resin, polysulfones, silicon element polymer, Bismaleimide-triazine resin, cyanic acid polyester, polyethylene, polycarbonate resin, acrylonitrile-butadiene-styrene (ABS) copolymerization Thing, PET, polybutylene terephthalate, liquid crystal polymer, polyamide, nylon 6, kematal, Polyphenylene sulfide or cyclic olefin copolymer.
- 5. encapsulating structure according to claim 3, it is characterised in that the metal in the non-conductive metal composite includes Zinc, copper, silver, gold, nickel, palladium, platinum, cobalt, rhodium, iridium, indium, iron, manganese, aluminium, chromium, tungsten, vanadium, tantalum, titanium or its any combination.
- 6. encapsulating structure according to claim 1, it is characterised in that also including driving chip, it is arranged on the substrate, should Driving chip is electrically connected to the sensing chip and multiple electrode contacts.
- 7. encapsulating structure according to claim 6, it is characterised in that the sensing chip includes MEMS sensing core Piece, the driving chip include application specific integrated circuit.
- 8. encapsulating structure according to claim 1, it is characterised in that the substrate also includes multiple electrodes opening, Duo Gesuo State electrode contact and be embedded in multiple electrode openings, and the upper surface of multiple electrode contacts connecing less than the substrate respectively Close surface.
- 9. encapsulating structure according to claim 8, it is characterised in that multiple electrodes protrude from the composition surface, with Multiple electrode openings are chimeric and contacted with multiple electrode contacts.
- 10. encapsulating structure according to claim 1, it is characterised in that first lead frame should including multiple electric connections The external connecting pads of sensing chip, the pedestal expose multiple external connecting pads relative to the back side on the composition surface.
- 11. encapsulating structure according to claim 10, it is characterised in that second lead frame covers the substrate and deviates from the base The back side of seat.
- 12. encapsulating structure according to claim 11, it is characterised in that also including substrate ground/screen layer and pedestal Ground connection/screen layer, the substrate ground/screen layer cover the peripheral side of the substrate and connect second lead frame, and the pedestal connects Ground/screen layer covers the peripheral side of the pedestal and/or the inner surface of the containing groove, and connects first lead frame.
- 13. encapsulating structure according to claim 11, it is characterised in that second lead frame also includes multiple stepped logical Hole, it runs through second lead frame, and the substrate also includes multiple stepped projections to be fitted together to corresponding stepped throughhole, its In respectively the stepped throughhole include top cover portion and connect the connecting portion of the top cover portion, the minimum diameter of the top cover portion is more than the company The maximum gauge of socket part.
- 14. encapsulating structure according to claim 10, it is characterised in that first lead frame also includes multiple stepped logical Hole, it is through to first lead frame, and the pedestal also includes multiple stepped projections to be fitted together to corresponding stepped throughhole, Wherein respectively the stepped throughhole includes top cover portion and connects the connecting portion of the top cover portion, and the minimum diameter of the top cover portion is more than should The maximum gauge of connecting portion.
- 15. encapsulating structure according to claim 11, it is characterised in that also including perforation, through the substrate and this second Lead frame, with the expose portion sensing chip.
- 16. encapsulating structure according to claim 15, it is characterised in that second lead frame also includes baffle ring, surround The perforation and maintain spacing with the outer peripheral edge of the perforation.
- 17. encapsulating structure according to claim 1, it is characterised in that second lead frame should including multiple electric connections The external connecting pads of sensing chip.
- 18. encapsulating structure according to claim 17, it is characterised in that also including perforation, through the substrate and this second Lead frame, with the expose portion sensing chip.
- 19. encapsulating structure according to claim 18, it is characterised in that second lead frame also includes baffle ring, surround The perforation and maintain spacing with the outer peripheral edge of the perforation.
- 20. encapsulating structure according to claim 17, it is characterised in that first wire erection is placed in relative to the engagement The back side in face, and cover the back side of first lead frame.
- 21. encapsulating structure according to claim 20, it is characterised in that also including substrate ground/screen layer and pedestal Ground connection/screen layer, the substrate ground/screen layer cover the peripheral side of the substrate and connect second lead frame, and the pedestal connects Ground/screen layer covers the peripheral side of the pedestal and/or the inner surface of the containing groove, and connects first lead frame.
- 22. encapsulating structure according to claim 20, it is characterised in that first lead frame also includes multiple stepped logical Hole, first lead frame is through to, and the pedestal also includes multiple stepped projections to be fitted together to corresponding stepped throughhole, its In respectively the stepped throughhole include top cover portion and connect the connecting portion of the top cover portion, the minimum diameter of the top cover portion is more than the company The maximum gauge of socket part.
- 23. encapsulating structure according to claim 17, it is characterised in that second lead frame also includes multiple stepped logical Hole, second lead frame is through to, and the substrate also includes multiple stepped projections to be fitted together to corresponding stepped throughhole, its In respectively the stepped throughhole include top cover portion and connect the connecting portion of the top cover portion, the minimum diameter of the top cover portion is more than the company The maximum gauge of socket part.
- 24. encapsulating structure according to claim 1, it is characterised in that also led including adhesion glue material, the adhesion glue material to be non- Electric glue or conducting resinl, are arranged between the composition surface and the substrate, to be bonded the pedestal and the substrate.
- 25. encapsulating structure according to claim 1, it is characterised in that the bottom surface of first patterned line layer is less than should Extend inclined-plane and the top surface of the pedestal, and the bottom surface of second patterned line layer is less than the top surface of the substrate.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105118929 | 2016-06-16 | ||
| TW105118929A TWI606560B (en) | 2016-06-16 | 2016-06-16 | Package structure |
| US15/232,808 | 2016-08-10 | ||
| US15/232,808 US9801282B2 (en) | 2014-06-24 | 2016-08-10 | Package structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107527876A true CN107527876A (en) | 2017-12-29 |
Family
ID=60748156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611224879.3A Pending CN107527876A (en) | 2016-06-16 | 2016-12-27 | Packaging structure |
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| Country | Link |
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| CN (1) | CN107527876A (en) |
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