JPH08510589A - カラー薄膜ｅｌディスプレイ - Google Patents
カラー薄膜ｅｌディスプレイInfo
- Publication number
- JPH08510589A JPH08510589A JP6525801A JP52580194A JPH08510589A JP H08510589 A JPH08510589 A JP H08510589A JP 6525801 A JP6525801 A JP 6525801A JP 52580194 A JP52580194 A JP 52580194A JP H08510589 A JPH08510589 A JP H08510589A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- display panel
- metal
- deposited
- absorbing dark
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 76
- 239000002184 metal Substances 0.000 claims abstract description 76
- 239000010410 layer Substances 0.000 claims description 166
- 239000000463 material Substances 0.000 claims description 47
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 37
- 239000011521 glass Substances 0.000 claims description 24
- 239000004020 conductor Substances 0.000 claims description 20
- 239000012190 activator Substances 0.000 claims description 18
- 239000003870 refractory metal Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 10
- 239000012790 adhesive layer Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 19
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 230000003081 coactivator Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229920013683 Celanese Polymers 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910019336 PrMnO3 Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920006334 epoxy coating Polymers 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- 229920006384 Airco Polymers 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 241000027355 Ferocactus setispinus Species 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 208000002193 Pain Diseases 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical class [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000000906 photoactive agent Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- PWYVVBKROXXHEB-UHFFFAOYSA-M trimethyl-[3-(1-methyl-2,3,4,5-tetraphenylsilol-1-yl)propyl]azanium;iodide Chemical compound [I-].C[N+](C)(C)CCC[Si]1(C)C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 PWYVVBKROXXHEB-UHFFFAOYSA-M 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
Landscapes
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US062,869 | 1993-05-17 | ||
| US08/062,869 US5445899A (en) | 1992-12-16 | 1993-05-17 | Color thin film electroluminescent display |
| PCT/US1994/005543 WO1994027418A1 (en) | 1993-05-17 | 1994-05-17 | Color thin film electroluminescent display |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08510589A true JPH08510589A (ja) | 1996-11-05 |
Family
ID=22045385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6525801A Pending JPH08510589A (ja) | 1993-05-17 | 1994-05-17 | カラー薄膜ｅｌディスプレイ |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5445899A (en, 2012) |
| EP (1) | EP0706748B1 (en, 2012) |
| JP (1) | JPH08510589A (en, 2012) |
| KR (1) | KR960702727A (en, 2012) |
| CA (1) | CA2163102A1 (en, 2012) |
| RU (1) | RU2131174C1 (en, 2012) |
| TW (1) | TW273066B (en, 2012) |
| WO (1) | WO1994027418A1 (en, 2012) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5578225A (en) * | 1995-01-19 | 1996-11-26 | Industrial Technology Research Institute | Inversion-type FED method |
| WO1996033594A1 (en) * | 1995-04-18 | 1996-10-24 | Cambridge Display Technology Limited | Electroluminescent device |
| US5773130A (en) * | 1996-06-06 | 1998-06-30 | Motorola, Inc. | Multi-color organic electroluminescent device |
| US5986401A (en) * | 1997-03-20 | 1999-11-16 | The Trustee Of Princeton University | High contrast transparent organic light emitting device display |
| US6121727A (en) * | 1997-04-04 | 2000-09-19 | Mitsubishi Chemical Corporation | Organic electroluminescent device |
| KR100209657B1 (ko) * | 1997-04-24 | 1999-07-15 | 구자홍 | 다색 전계 발광 디스플레이 어레이 패널 및 그 제조방법 |
| US6107736A (en) * | 1997-06-02 | 2000-08-22 | Motorola, Inc. | Organic electroluminescent display device and method of fabrication |
| US6069443A (en) * | 1997-06-23 | 2000-05-30 | Fed Corporation | Passive matrix OLED display |
| JPH11144877A (ja) * | 1997-11-10 | 1999-05-28 | Fuji Electric Co Ltd | 有機発光素子 |
| US5986391A (en) * | 1998-03-09 | 1999-11-16 | Feldman Technology Corporation | Transparent electrodes |
| US6106352A (en) * | 1998-03-18 | 2000-08-22 | Sanyo Electric Co., Ltd. | Method for fabrication of organic electroluminescent device |
| DE69831860T2 (de) | 1998-07-04 | 2006-07-20 | Au Optronics Corp. | Elektrode zur verwendung in elektrooptischen bauelementen |
| JP3887984B2 (ja) | 1999-02-05 | 2007-02-28 | 松下電器産業株式会社 | 多色発光分散型ｅｌランプ |
| US6843697B2 (en) * | 1999-06-25 | 2005-01-18 | Micron Display Technology, Inc. | Black matrix for flat panel field emission displays |
| JP2002025781A (ja) * | 2000-07-07 | 2002-01-25 | Nec Corp | 有機ｅｌ素子およびその製造方法 |
| JP5243675B2 (ja) * | 2000-08-14 | 2013-07-24 | レノボ シンガポール プライヴェート リミテッド | コンピュータ装置および記憶媒体 |
| FR2824261B1 (fr) * | 2001-05-04 | 2004-05-28 | Ldr Medical | Prothese de disque intervertebral et procede et outils de mise en place |
| FR2827156B1 (fr) * | 2001-07-13 | 2003-11-14 | Ldr Medical | Dispositif de cage vertebrale avec fixation modulaire |
| KR100424204B1 (ko) * | 2001-08-10 | 2004-03-24 | 네오뷰코오롱 주식회사 | 무반사 유기 전계발광소자 |
| KR100404203B1 (ko) * | 2001-08-21 | 2003-11-03 | 엘지전자 주식회사 | 트리플 스캔 구조의 유기 ｅｌ 소자 |
| RU2303422C2 (ru) * | 2002-03-12 | 2007-07-27 | Сервитек Инк. | Межпозвонковый протез и система межпозвонковых протезов, в частности для шейного отдела позвоночника |
| FR2846550B1 (fr) * | 2002-11-05 | 2006-01-13 | Ldr Medical | Prothese de disque intervertebral |
| FR2851157B1 (fr) * | 2003-02-13 | 2005-12-09 | Spinevision | Prothese intervertebrale |
| BRPI0409091A (pt) * | 2003-04-07 | 2006-04-11 | Cervitech Inc | prótese de junta intervertebral para a espinha cervical |
| RU2253163C2 (ru) * | 2003-07-03 | 2005-05-27 | Трошин Евгений Владимирович | Устройство для рассеивания излучений |
| EP1512384A1 (de) * | 2003-07-21 | 2005-03-09 | Cervitech, Inc. | Bandscheibenprothese |
| EP2113227B1 (en) * | 2004-02-04 | 2015-07-29 | LDR Medical | Intervertebral disc prosthesis |
| FR2869528B1 (fr) * | 2004-04-28 | 2007-02-02 | Ldr Medical | Prothese de disque intervertebral |
| MXPA06014714A (es) * | 2004-06-30 | 2007-06-22 | Synergy Disc Replacement Inc | Disco espinal artificial. |
| FR2879436B1 (fr) * | 2004-12-22 | 2007-03-09 | Ldr Medical | Prothese de disque intervertebral |
| KR100624307B1 (ko) * | 2005-02-23 | 2006-09-19 | 제일모직주식회사 | 표시장치용 저반사율의 휘도 향상 다층 광학필름 및 이를이용한 유기발광다이오드 표시장치 |
| RU2400186C2 (ru) * | 2005-04-11 | 2010-09-27 | Имплиант Лтд. | Введение антериорных и постериорных спинальных протезов |
| TWI400066B (zh) * | 2005-06-22 | 2013-07-01 | Cervitech Inc | 具自攻式固定凸體之椎間假體 |
| WO2007048252A2 (en) * | 2005-10-27 | 2007-05-03 | Kinetic Spine Technologies Inc. | Intervertebral implant |
| US20080218073A1 (en) * | 2007-03-08 | 2008-09-11 | Adrian Kitai | Electroluminescent Nixels and Elements with Single-Sided Electrical Contacts |
| RU2339342C1 (ru) * | 2007-05-18 | 2008-11-27 | Общество с ограниченной ответственностью "ИЛЬКОМ" | Имплантат для замещения костных и хрящевых структур и устройство для его закрепления |
| RU2362517C2 (ru) * | 2007-07-09 | 2009-07-27 | Федеральное государственное учреждение Новосибирский научно-исследовательский институт травматологии и ортопедии Федерального агентства по высокотехнологичной медицинской помощи (ФГУ ННИИТО Росмедтехнологий) | Фиксатор позвоночника |
| US7567370B2 (en) * | 2007-07-26 | 2009-07-28 | Hewlett-Packard Development Company, L.P. | Color display having layer dependent spatial resolution and related method |
| RU2357702C1 (ru) * | 2007-11-26 | 2009-06-10 | Государственное образовательное учреждение высшего профессионального образования "Южно-Уральский государственный университет" | Имплантат для замещения костных фрагментов |
| RU2379005C2 (ru) * | 2007-12-25 | 2010-01-20 | Валерий Федорович Татаринов | Имплантат межпозвонковый подвижный из изотропного пиролитического углерода |
| RU2382619C2 (ru) * | 2007-12-25 | 2010-02-27 | Валерий Федорович Татаринов | Имплантат межпозвонковый неподвижный из изотропного пиролитического углерода |
| WO2010024006A1 (ja) * | 2008-09-01 | 2010-03-04 | シャープ株式会社 | 有機エレクトロルミネセンスパネル、有機エレクトロルミネセンスディスプレイ、有機エレクトロルミネセンス照明、及び、それらの製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4287449A (en) * | 1978-02-03 | 1981-09-01 | Sharp Kabushiki Kaisha | Light-absorption film for rear electrodes of electroluminescent display panel |
| US4547702A (en) * | 1983-10-11 | 1985-10-15 | Gte Products Corporation | Thin film electroluminscent display device |
| US4602189A (en) * | 1983-10-13 | 1986-07-22 | Sigmatron Nova, Inc. | Light sink layer for a thin-film EL display panel |
| DE3561435D1 (en) * | 1984-03-23 | 1988-02-18 | Matsushita Electric Industrial Co Ltd | Thin film el panel |
| US4613793A (en) * | 1984-08-06 | 1986-09-23 | Sigmatron Nova, Inc. | Light emission enhancing dielectric layer for EL panel |
| JPS61284092A (ja) * | 1985-06-07 | 1986-12-15 | アルプス電気株式会社 | 薄膜ｅｌ表示素子 |
| SU1348892A1 (ru) * | 1985-08-26 | 1987-10-30 | Предприятие П/Я М-5876 | Электролюминесцентный экран |
| US4963788A (en) * | 1988-07-14 | 1990-10-16 | Planar Systems, Inc. | Thin film electroluminescent display with improved contrast |
| US5293301A (en) * | 1990-11-30 | 1994-03-08 | Shinko Electric Industries Co., Ltd. | Semiconductor device and lead frame used therein |
| US5559399A (en) * | 1992-06-11 | 1996-09-24 | Norden Systems, Inc. | Low resistance, thermally stable electrode structure for electroluminescent displays |
| WO1994014298A1 (en) * | 1992-12-14 | 1994-06-23 | Westinghouse Electric Corporation | Sunlight viewable thin film electroluminescent display having darkened metal electrodes |
| US5517080A (en) * | 1992-12-14 | 1996-05-14 | Westinghouse Norden Systems Inc. | Sunlight viewable thin film electroluminescent display having a graded layer of light absorbing dark material |
| US5445898A (en) * | 1992-12-16 | 1995-08-29 | Westinghouse Norden Systems | Sunlight viewable thin film electroluminescent display |
-
1993
- 1993-05-17 US US08/062,869 patent/US5445899A/en not_active Expired - Fee Related
-
1994
- 1994-05-17 EP EP94917429A patent/EP0706748B1/en not_active Expired - Lifetime
- 1994-05-17 WO PCT/US1994/005543 patent/WO1994027418A1/en active IP Right Grant
- 1994-05-17 RU RU95122469A patent/RU2131174C1/ru active
- 1994-05-17 CA CA002163102A patent/CA2163102A1/en not_active Abandoned
- 1994-05-17 KR KR1019950705117A patent/KR960702727A/ko not_active Abandoned
- 1994-05-17 JP JP6525801A patent/JPH08510589A/ja active Pending
- 1994-06-03 TW TW083105078A patent/TW273066B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO1994027418A1 (en) | 1994-11-24 |
| TW273066B (en, 2012) | 1996-03-21 |
| EP0706748A1 (en) | 1996-04-17 |
| CA2163102A1 (en) | 1994-11-24 |
| EP0706748B1 (en) | 1997-09-03 |
| US5445899A (en) | 1995-08-29 |
| KR960702727A (ko) | 1996-04-27 |
| RU2131174C1 (ru) | 1999-05-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH08510589A (ja) | カラー薄膜ｅｌディスプレイ | |
| US5400047A (en) | High brightness thin film electroluminescent display with low OHM electrodes | |
| US5517080A (en) | Sunlight viewable thin film electroluminescent display having a graded layer of light absorbing dark material | |
| EP0645073B1 (en) | Low resistance, thermally stable electrode structure for electroluminescent displays | |
| US5445898A (en) | Sunlight viewable thin film electroluminescent display | |
| US5521465A (en) | Sunlight viewable thin film electroluminscent display having darkened metal electrodes | |
| JPH01220393A (ja) | 薄膜型エレクトロルミネセンス素子 | |
| US4683044A (en) | Method of manufacturing an electroluminescent panel without any adverse influence on an underlying layer | |
| JP3308308B2 (ja) | 薄膜ｅｌディスプレイ素子及びその製造方法 | |
| JPH0452566B2 (en, 2012) | ||
| JPH01204394A (ja) | 薄膜ｅｌ素子 | |
| JPH088063A (ja) | 薄膜型青色エレクトロルミネッセンス素子 | |
| JPS62113385A (ja) | 薄膜型ｅｌ素子の製造方法 | |
| JPH0834125B2 (ja) | 多色薄膜ｅｌ素子の製造方法 | |
| JPH0460318B2 (en, 2012) | ||
| JPS6180793A (ja) | 薄膜ｅｌ素子 | |
| JPH11102785A (ja) | Ｅｌ素子 | |
| JPH02144883A (ja) | 薄膜ｅｌ素子 | |
| JPH01272096A (ja) | 薄膜ｅｌ素子の構造 | |
| JPH03138892A (ja) | 薄膜ｅｌ素子の構造 | |
| JPS62241255A (ja) | 螢光光源管 | |
| JPS6489181A (en) | El panel |