JPH0837310A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JPH0837310A
JPH0837310A JP17273994A JP17273994A JPH0837310A JP H0837310 A JPH0837310 A JP H0837310A JP 17273994 A JP17273994 A JP 17273994A JP 17273994 A JP17273994 A JP 17273994A JP H0837310 A JPH0837310 A JP H0837310A
Authority
JP
Japan
Prior art keywords
insulating film
electrode
contact hole
film
transparent electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP17273994A
Other languages
English (en)
Japanese (ja)
Inventor
Yasushi Hatada
泰志 畑田
Yasuhiro Mitani
康弘 三谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP17273994A priority Critical patent/JPH0837310A/ja
Priority to TW084106931A priority patent/TW280034B/zh
Priority to KR1019950023033A priority patent/KR960006096A/ko
Publication of JPH0837310A publication Critical patent/JPH0837310A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
JP17273994A 1994-07-25 1994-07-25 半導体装置およびその製造方法 Withdrawn JPH0837310A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP17273994A JPH0837310A (ja) 1994-07-25 1994-07-25 半導体装置およびその製造方法
TW084106931A TW280034B (enrdf_load_stackoverflow) 1994-07-25 1995-07-05
KR1019950023033A KR960006096A (ko) 1994-07-25 1995-07-25 반도체 장치 및 그의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17273994A JPH0837310A (ja) 1994-07-25 1994-07-25 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
JPH0837310A true JPH0837310A (ja) 1996-02-06

Family

ID=15947425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17273994A Withdrawn JPH0837310A (ja) 1994-07-25 1994-07-25 半導体装置およびその製造方法

Country Status (3)

Country Link
JP (1) JPH0837310A (enrdf_load_stackoverflow)
KR (1) KR960006096A (enrdf_load_stackoverflow)
TW (1) TW280034B (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6211553B1 (en) 1996-11-25 2001-04-03 L. G. Philips Lcd Co., Ltd. Thin-film transistor, a method for manufacturing same, and a liquid crystal display device using the transistor
KR100720434B1 (ko) * 2000-09-27 2007-05-22 엘지.필립스 엘시디 주식회사 액정표시소자 및 그 제조방법
KR100980009B1 (ko) * 2002-11-22 2010-09-03 삼성전자주식회사 박막 트랜지스터 기판 및 그 제조 방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6211553B1 (en) 1996-11-25 2001-04-03 L. G. Philips Lcd Co., Ltd. Thin-film transistor, a method for manufacturing same, and a liquid crystal display device using the transistor
KR100720434B1 (ko) * 2000-09-27 2007-05-22 엘지.필립스 엘시디 주식회사 액정표시소자 및 그 제조방법
US7289187B2 (en) 2000-09-27 2007-10-30 Lg.Philips Lcd Co., Ltd. Liquid crystal display device with minimum ohmic contact between reflective and transparent electrodes
KR100980009B1 (ko) * 2002-11-22 2010-09-03 삼성전자주식회사 박막 트랜지스터 기판 및 그 제조 방법

Also Published As

Publication number Publication date
KR960006096A (ko) 1996-02-23
TW280034B (enrdf_load_stackoverflow) 1996-07-01

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