JPH08330601A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JPH08330601A
JPH08330601A JP8066041A JP6604196A JPH08330601A JP H08330601 A JPH08330601 A JP H08330601A JP 8066041 A JP8066041 A JP 8066041A JP 6604196 A JP6604196 A JP 6604196A JP H08330601 A JPH08330601 A JP H08330601A
Authority
JP
Japan
Prior art keywords
semiconductor
gate
semiconductor region
region
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8066041A
Other languages
English (en)
Japanese (ja)
Other versions
JPH08330601A5 (enExample
Inventor
Koichi Endo
幸一 遠藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP8066041A priority Critical patent/JPH08330601A/ja
Publication of JPH08330601A publication Critical patent/JPH08330601A/ja
Publication of JPH08330601A5 publication Critical patent/JPH08330601A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]

Landscapes

  • Element Separation (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP8066041A 1995-03-30 1996-03-22 半導体装置およびその製造方法 Pending JPH08330601A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8066041A JPH08330601A (ja) 1995-03-30 1996-03-22 半導体装置およびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7335495 1995-03-30
JP7-73354 1995-03-30
JP8066041A JPH08330601A (ja) 1995-03-30 1996-03-22 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPH08330601A true JPH08330601A (ja) 1996-12-13
JPH08330601A5 JPH08330601A5 (enExample) 2006-05-25

Family

ID=26407217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8066041A Pending JPH08330601A (ja) 1995-03-30 1996-03-22 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPH08330601A (enExample)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002158356A (ja) * 2000-11-21 2002-05-31 Fuji Electric Co Ltd Ｍｉｓ半導体装置およびその製造方法
US6452231B1 (en) 1997-07-31 2002-09-17 Kabushiki Kaisha Toshiba Semiconductor device
US6734501B2 (en) 2001-01-30 2004-05-11 Takuo Sugano Fully inverted type SOI-MOSFET capable of increasing the effective mutual conductance
EP1094525A3 (en) * 1999-10-19 2008-04-09 Denso Corporation Field-effect semiconductor device having a trench gate electrode and method of making the same
JP2009170468A (ja) * 2008-01-10 2009-07-30 Sharp Corp Ｍｏｓ電界効果トランジスタ
JP2012164900A (ja) * 2011-02-09 2012-08-30 Sanken Electric Co Ltd 化合物半導体装置及び化合物半導体装置の製造方法
KR101225225B1 (ko) * 2006-11-30 2013-01-22 페어차일드 세미컨덕터 코포레이션 래치업되지 않는 집적 절연 게이트 양극성 트랜지스터
JP2013153128A (ja) * 2011-12-28 2013-08-08 Denso Corp 横型の絶縁ゲート型バイポーラトランジスタを備えた半導体装置
JP2014236159A (ja) * 2013-06-04 2014-12-15 ローム株式会社 半導体装置および半導体装置の製造方法
JP2017034154A (ja) * 2015-08-04 2017-02-09 株式会社東芝 半導体装置
JP2020102560A (ja) * 2018-12-25 2020-07-02 株式会社日立製作所 炭化ケイ素半導体装置、電力変換装置、３相モータシステム、自動車および鉄道車両
CN113990936A (zh) * 2021-12-23 2022-01-28 浙江大学杭州国际科创中心 一种基于不同栅极结构的mos管器件
CN114068701A (zh) * 2020-07-30 2022-02-18 中芯北方集成电路制造(北京)有限公司 半导体结构及其形成方法
US20220055153A1 (en) * 2018-08-10 2022-02-24 The Research Foundation For The State University Of New York Additive manufacturing processes and additively manufactured products
JP2022048690A (ja) * 2020-09-15 2022-03-28 住友電気工業株式会社 半導体装置

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6452231B1 (en) 1997-07-31 2002-09-17 Kabushiki Kaisha Toshiba Semiconductor device
EP2991120A1 (en) 1999-10-19 2016-03-02 Denso Corporation Semiconductor device having trench filled up with gate electrode and method of manufacturing the same
EP1094525A3 (en) * 1999-10-19 2008-04-09 Denso Corporation Field-effect semiconductor device having a trench gate electrode and method of making the same
EP2109135A2 (en) 1999-10-19 2009-10-14 Denso Corporation Methods of making a field-effect semiconductor device
EP2109135A3 (en) * 1999-10-19 2013-09-04 Denso Corporation Methods of making a field-effect semiconductor device
JP2002158356A (ja) * 2000-11-21 2002-05-31 Fuji Electric Co Ltd Ｍｉｓ半導体装置およびその製造方法
US6734501B2 (en) 2001-01-30 2004-05-11 Takuo Sugano Fully inverted type SOI-MOSFET capable of increasing the effective mutual conductance
KR101225225B1 (ko) * 2006-11-30 2013-01-22 페어차일드 세미컨덕터 코포레이션 래치업되지 않는 집적 절연 게이트 양극성 트랜지스터
JP2009170468A (ja) * 2008-01-10 2009-07-30 Sharp Corp Ｍｏｓ電界効果トランジスタ
JP2012164900A (ja) * 2011-02-09 2012-08-30 Sanken Electric Co Ltd 化合物半導体装置及び化合物半導体装置の製造方法
JP2013153128A (ja) * 2011-12-28 2013-08-08 Denso Corp 横型の絶縁ゲート型バイポーラトランジスタを備えた半導体装置
JP2014236159A (ja) * 2013-06-04 2014-12-15 ローム株式会社 半導体装置および半導体装置の製造方法
JP2017034154A (ja) * 2015-08-04 2017-02-09 株式会社東芝 半導体装置
US20220055153A1 (en) * 2018-08-10 2022-02-24 The Research Foundation For The State University Of New York Additive manufacturing processes and additively manufactured products
US12122120B2 (en) * 2018-08-10 2024-10-22 The Research Foundation For The State University Of New York Additive manufacturing processes and additively manufactured products
JP2020102560A (ja) * 2018-12-25 2020-07-02 株式会社日立製作所 炭化ケイ素半導体装置、電力変換装置、３相モータシステム、自動車および鉄道車両
WO2020137124A1 (ja) * 2018-12-25 2020-07-02 株式会社日立製作所 炭化ケイ素半導体装置、電力変換装置、３相モータシステム、自動車および鉄道車両
US11978794B2 (en) 2018-12-25 2024-05-07 Hitachi, Ltd. Silicon carbide semiconductor device, power conversion device, three-phase motor system, automobile, and railway vehicle
CN114068701A (zh) * 2020-07-30 2022-02-18 中芯北方集成电路制造(北京)有限公司 半导体结构及其形成方法
CN114068701B (zh) * 2020-07-30 2024-03-19 中芯北方集成电路制造(北京)有限公司 半导体结构及其形成方法
JP2022048690A (ja) * 2020-09-15 2022-03-28 住友電気工業株式会社 半導体装置
US12051741B2 (en) 2020-09-15 2024-07-30 Sumitomo Electric Industries, Ltd. Semiconductor device
CN113990936A (zh) * 2021-12-23 2022-01-28 浙江大学杭州国际科创中心 一种基于不同栅极结构的mos管器件

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