JPH083008Y2 - Bipolar integrated circuit device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial application] The present invention relates to a bipolar integrated circuit, and more particularly to a structure for reducing shear stress applied to an active area portion of a chip thereof.

[Conventional technology]

FIG. 2 shows a structure of a peripheral portion of an example of a conventional bipolar integrated circuit chip.

In the figure, 1a is an inactive region around the chip, 2 is an active region, 3 is an insulating film, and 4 is an Al wiring (including a bonding pad).

In the figure, the surface protective film that normally forms the surface layer is omitted.

Conventionally, in the bipolar integrated circuit chip, as shown in FIG. 2, the surface of the chip peripheral portion 1a is lower than the surface of the active region 2 inside.

The inactive region 1a on the periphery of the chip has a small effect that directly contributes to the electrical characteristics of the circuit, and acts as a buffer region so that mechanical damage around the chip does not directly damage the active region except in special cases. Or acts as a buffer to prevent defects in the active area that occur during assembly from directly reaching the chip edge (the exposed portion of the substrate that is not covered by the insulating film).

[Problems to be solved by the device]

In the conventional integrated circuit chip having the above-mentioned structure, while the surface of the chip is open, that is, until it is sealed with resin, it exhibits electrical characteristics in accordance with the designed intention, and of course, the mechanical characteristics There is no target damage. However, when resin sealing is performed, shear stress is generated on the surface of the chip, and particularly, the shear stress becomes large in the peripheral portion of the chip, so that fluctuations in electrical characteristics, deterioration of the Al wiring 4, the surface protective film, the insulating film 3, etc. There was a problem that.

The present invention has been made to solve the above problems, and an object of the present invention is to provide a device having a small shear stress due to the molding resin applied to the active region of the chip.

[Means for solving the problem]

In the bipolar integrated circuit device of the present invention, the entire surface except the peripheral portion of the chip is etched in a concave shape, and the active portion is formed in the etched region, so that the surface of the peripheral portion of the chip is higher than that of the inner active region surface. The inactive region is formed.

[Action]

As described above, when the surface of the active area portion of the chip is lower than the surface of the inactive area portion around the chip, the convex portion around the chip is subjected to the same shear stress due to the mold resin as in the case of the chip having the conventional structure. In addition, however, the active area portion has a peripheral convex portion as a wall, which applies a shear stress much smaller than that in the case of the chip having the conventional structure.

〔Example〕

FIG. 1 shows a structure of a peripheral portion of a chip according to an embodiment of the present invention.

In the figure, reference numerals 2, 3 and 4 denote the same or corresponding portions as the same reference numerals in FIG. 2, and 1 denotes a convex inactive region in the peripheral portion of the chip whose surface is higher than the surface of the active region portion 2.

Also in the figure, the surface protective film forming the surface layer is omitted as in FIG.

When the inactive region 1 on the periphery of the chip has the above-described structure, during the resin molding, due to the action of the convex portion 1, almost no shear stress is exerted from the convex portion 1 on the chip surface to the inner active region 2 portion. It will no longer spread, and the shear stress of the individual elements, the Al wiring 4, the surface protective film, and the insulating film 3 located in the region 2 will be reduced.

Therefore, these components are hardly deteriorated, the performance deterioration of the integrated circuit element is reduced, the characteristics are stabilized, and the reliability is improved.

The chip with the above structure is manufactured by etching the entire central portion of the chip except the peripheral portion in a concave shape, and forming an active portion (integrated circuit) in the etched area. It is formed in a convex shape higher than the surface of the region.

The concave etching depth is the same as the Al wiring 4 of the chip.
It is sufficient if it is equal to or more than the maximum value of the height difference of.

[Effect of device]

As described above, according to the present invention, when the resin is molded, the convex wall at the periphery of the chip suppresses the propagation of the shear stress due to the resin to the inner active region, so that the variation in the electrical characteristics is suppressed. This is effective in suppressing deterioration of Al wiring, surface protection film, and insulating film, and improving reliability.

[Brief description of drawings]

FIG. 1 is a sectional view showing the structure of the peripheral portion of a chip according to an embodiment of the present invention, and FIG. 2 is a sectional view showing the structure of the peripheral portion of an example of a conventional bipolar integrated circuit chip. 1 ... Inactive region around convex chip, 2 ... Active region, 3 ... Insulating film, 4 ... Al wiring The same reference numerals in the drawings indicate the same or corresponding portions.

Claims (1)

[Scope of utility model registration request] 1. A convex inactive surface having a higher surface in the peripheral portion of the chip than the surface of the inner active region by etching the entire region except the peripheral portion of the chip in a concave shape and forming an active portion in the etched region. A bipolar integrated circuit device characterized in that a region is formed to reduce the shear stress due to the molding resin applied to the active region of the chip.