JPH0357252A - Resin-sealed semiconductor device - Google Patents
Resin-sealed semiconductor deviceInfo
- Publication number
- JPH0357252A JPH0357252A JP19301089A JP19301089A JPH0357252A JP H0357252 A JPH0357252 A JP H0357252A JP 19301089 A JP19301089 A JP 19301089A JP 19301089 A JP19301089 A JP 19301089A JP H0357252 A JPH0357252 A JP H0357252A
- Authority
- JP
- Japan
- Prior art keywords
- island
- sealed
- resin
- mounting part
- flange
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 239000011347 resin Substances 0.000 claims abstract description 18
- 229920005989 resin Polymers 0.000 claims abstract description 18
- 238000007789 sealing Methods 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 abstract description 4
- 239000000356 contaminant Substances 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 abstract description 2
- 230000008646 thermal stress Effects 0.000 abstract description 2
- 238000005476 soldering Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は樹脂封止型半導体装置に関し、特に電力消費の
大きい半導体チップを搭載した表面実装用の樹脂封止型
半導体装置に関する．
〔従来の技術〕
従来の例えば、ＳＣ−５９ ＜ＥＩＡＪＭ格冫またはＴ
ｏ−２２０ （ＪＥＤＥＣ規格）等の大電力半導体チッ
プを搭載した樹脂封止型半導体装置は、第３図に示すよ
うに、プリント板等への表面半田付実装を可能にするた
めアイランド１の素子載置部上に半導体チツプ３を搭載
し、アイランドの素子載置部の裏面のみを露出させた状
態で素子載置部を含むアイランド１を樹脂体４によりモ
ールドし、封止していた．
この半導体装置は、実装時に露出された素子載置部の裏
面をプリント回路基板等に直接半田付けして実装される
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a resin-sealed semiconductor device, and particularly to a resin-sealed semiconductor device for surface mounting mounted with a semiconductor chip that consumes a large amount of power. [Prior art] For example, the conventional technology is SC-59 <EIAJM grade or T
As shown in Figure 3, resin-sealed semiconductor devices equipped with high-power semiconductor chips such as O-220 (JEDEC standard) have elements on island 1 to enable surface soldering mounting on printed circuit boards, etc. A semiconductor chip 3 is mounted on the mounting part, and the island 1 including the element mounting part is molded and sealed with a resin body 4 with only the back side of the element mounting part of the island exposed. This semiconductor device is mounted by directly soldering the back surface of the element mounting portion exposed during mounting to a printed circuit board or the like.
上述した従来の樹脂封止型半導体装置は、アイランドの
素子載置部の裏面を露出した状態で樹脂封止されており
、この露出面をプリント回路基板等へ直接半田付して実
装するとき、アイランドと樹脂体との熱膨張率の違いの
ため、２３０℃〜２６０℃の熱ストレスを受けてアイラ
ンドと樹脂体の界面がわずかに開くことがしばしば起る
。このため、半田付時にフラックス中の塩素等の活性元
素が界面から浸入したり、又は、プリント回路基板に半
田付実装後電子機器として使用中に水分が浸入して使用
中に半導体チップの表面に、塩素等の活性元素や水分が
到達し、アルミニウム等の半導体チップ上の電極を溶解
したり、半導体チップの特性を劣化させたりする時間，
即ち耐湿寿命がアイランド及び半導体チップの全面を樹
脂体で封止された樹脂封止型半導体装置に比べて著しく
短かいという欠点があった。The conventional resin-sealed semiconductor device described above is resin-sealed with the back surface of the element mounting portion of the island exposed, and when mounted by directly soldering this exposed surface to a printed circuit board, etc. Due to the difference in thermal expansion coefficient between the island and the resin body, the interface between the island and the resin body often opens slightly when subjected to thermal stress of 230°C to 260°C. For this reason, active elements such as chlorine in the flux may enter from the interface during soldering, or moisture may enter the surface of the semiconductor chip during use as an electronic device after soldering and mounting on a printed circuit board. , the time that active elements such as chlorine and moisture reach and dissolve electrodes on semiconductor chips such as aluminum or deteriorate the characteristics of semiconductor chips,
That is, the moisture resistance life is significantly shorter than that of a resin-sealed semiconductor device in which the island and the entire surface of the semiconductor chip are sealed with a resin body.
本発明の樹脂封止型半導体装置は、素子載置部を有する
アイランドと、前記素子載置部上に搭載した半導体チッ
プと、前記アイランドの前記素子載置部の裏面のみを露
出して前記アイランドを封止した樹脂体とを有する樹脂
封止型半導体装置において、前記アイランドの周縁に設
けて前記樹脂体内に封止したフランジを備えている．〔
実施例〕
次に、本発明について図面を参照して説明する。The resin-sealed semiconductor device of the present invention includes an island having an element mounting part, a semiconductor chip mounted on the element mounting part, and an island in which only the back surface of the element mounting part of the island is exposed. A resin-sealed semiconductor device having a resin body sealed with a resin body includes a flange provided at a periphery of the island and sealed within the resin body. [
Embodiments Next, the present invention will be described with reference to the drawings.
第１図は本発明の第１の実施例の樹脂封止型半導体装置
の断面図である。FIG. 1 is a sectional view of a resin-sealed semiconductor device according to a first embodiment of the present invention.
中央部に素子載置部を有し、周縁部をプレス加工して素
子載置部の周囲に段差を設けたフランジ２を有する皿状
のアイランド１を設け、アイランド１の素子載置部に半
導体チップ３を搭載し、素子載置部の裏面のみを露出さ
せた状態で樹脂体４で封止する．このとき、フランジ２
は樹脂体４の内部に包み込まれて封止されており、その
ため、本発明の半導体装置が、半田付実装等の熱ストレ
スを受けたとき、アイランド１の水分や汚染物質の浸入
経路が長くなり半導体チップを汚染より防ぐことができ
る。A dish-shaped island 1 having an element mounting part in the center and a flange 2 having a step formed around the element mounting part by pressing the peripheral part is provided, and a semiconductor is placed in the element mounting part of the island 1. A chip 3 is mounted and sealed with a resin body 4 with only the back surface of the element mounting portion exposed. At this time, flange 2
is wrapped and sealed inside the resin body 4. Therefore, when the semiconductor device of the present invention is subjected to heat stress such as soldering and mounting, the path for moisture and contaminants to penetrate into the island 1 becomes long. Semiconductor chips can be prevented from being contaminated.
第２図は本発明の第２の実施例の断面図である．
アイランド１の周縁部を薄くプレス加工してフランジ２
を設けた以外は第１の実施例と同様の構成を有しており
、同様の効果が得られる。FIG. 2 is a sectional view of a second embodiment of the present invention. Flange 2 is formed by thinly pressing the peripheral edge of island 1.
The second embodiment has the same structure as the first embodiment except for the provision of the second embodiment, and the same effects can be obtained.
以上説明したように、本発明は、半導体チップを搭載す
るアイランドの周縁部が、少くともその裏面において、
裏面から半導体チップ搭載面の方向にへこまされている
ので、半導体チップを搭載しているアイランドの素子載
置部の裏面を露出させた状態で樹脂封止したとき、アイ
ランドの周縁部に設けたフランジが樹脂体中に封止され
ているので、水分や汚染物質の浸入経路が長くなり活性
なイオンや水分が入りに＜＜、半導体装置使用時の耐湿
寿命が著しく向上するという効果を有する。As explained above, the present invention provides that the periphery of the island on which the semiconductor chip is mounted, at least on the back surface thereof,
Since the back surface is recessed in the direction of the semiconductor chip mounting surface, when the back surface of the element mounting part of the island on which the semiconductor chip is mounted is exposed and sealed with resin, the Since the flange is sealed in the resin body, the infiltration path for moisture and contaminants is lengthened, allowing active ions and moisture to enter.This has the effect of significantly improving the moisture resistant life of the semiconductor device when it is used.
第ｌ図及び第２図は本発明の第１及び第２の実施例の断
面図、第３図は従来の樹脂封止形半導体装置の断面図で
ある。
１・・・アイランド、２・・・フランジ、３・・・半導
体チップ、４・・・樹脂体．1 and 2 are cross-sectional views of the first and second embodiments of the present invention, and FIG. 3 is a cross-sectional view of a conventional resin-sealed semiconductor device. DESCRIPTION OF SYMBOLS 1... Island, 2... Flange, 3... Semiconductor chip, 4... Resin body.
Claims (1)
搭載した半導体チップと、前記アイランドの前記素子載
置部の裏面のみを露出して前記アイランドを封止した樹
脂体とを有する樹脂封止型半導体装置において、前記ア
イランドの周縁に設けて前記樹脂体内に封止したフラン
ジを備えたことを特徴とする樹脂封止型半導体装置。A resin seal comprising an island having an element mounting part, a semiconductor chip mounted on the element mounting part, and a resin body sealing the island with only the back surface of the element mounting part of the island exposed. 1. A resin-sealed semiconductor device, characterized in that the resin-sealed semiconductor device includes a flange provided at a periphery of the island and sealed within the resin body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19301089A JPH0357252A (en) | 1989-07-25 | 1989-07-25 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19301089A JPH0357252A (en) | 1989-07-25 | 1989-07-25 | Resin-sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0357252A true JPH0357252A (en) | 1991-03-12 |
Family
ID=16300696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19301089A Pending JPH0357252A (en) | 1989-07-25 | 1989-07-25 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0357252A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5488254A (en) * | 1991-08-05 | 1996-01-30 | Hitachi, Ltd. | Plastic-molded-type semiconductor device |
| KR100738729B1 (en) * | 2003-05-29 | 2007-07-12 | 세이코 엡슨 가부시키가이샤 | Screen, image display device and rear projector |
-
1989
- 1989-07-25 JP JP19301089A patent/JPH0357252A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5488254A (en) * | 1991-08-05 | 1996-01-30 | Hitachi, Ltd. | Plastic-molded-type semiconductor device |
| KR100738729B1 (en) * | 2003-05-29 | 2007-07-12 | 세이코 엡슨 가부시키가이샤 | Screen, image display device and rear projector |
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