JP3098333B2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a semiconductor chip is sealed with a resin, and more particularly to a semiconductor device in which a wiring conductor film disposed adjacent to a corner region of a semiconductor chip has improved stress resistance.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor device, as shown in FIGS. 3A and 3B, a semiconductor element region 11 is formed on one main surface of a semiconductor substrate 10 and a first interlayer insulating film 20 is interposed therebetween. To form an internal wiring conductor film 12 of aluminum or the like and a first wiring conductor film 13 around the semiconductor device.
The second wiring conductor film 14 around the semiconductor device such as aluminum is formed including the bonding pad portion 18 with the interlayer insulating film 21 interposed therebetween, and is formed with a protective insulating film 23 such as a phosphor silicate glass or a silicon nitride film. After covering, only the bonding pad portion 18 is etched and exposed.

[0003]

In such a conventional semiconductor device, when a temperature cycle test at + 150.degree. C. to -65.degree. C. is performed, stress is generated due to expansion and contraction of a resin for sealing the semiconductor chip. As shown by arrows in FIG. 3A, a large stress is applied to the second wiring conductor film 14 around the semiconductor device. At this time, when a large chip having a chip size exceeding 15 mm □ was sealed with a resin and a temperature cycle test was performed with the recent resin sealing of a large chip, FIG.
As shown in (b), since the stress is directly applied to the second wiring conductor film 14 in the peripheral portion of the semiconductor device, a crack is generated in the protection insulating film 23 covering the second wiring conductor film 14.

Further, as shown in the model diagram of FIG. 4, a slide occurs in the wiring conductor film due to stress. This slide has a tendency that the sliding width is larger in the corner adjacent region 25 than in the corner region 24 of the semiconductor device, and the second wiring conductor film 14 in the peripheral portion of the semiconductor device is shifted in the corner adjacent region 25. However, there is a problem that the reliability of the wiring is reduced. For example, as a result of conducting an experiment with a 14.8 mm square chip sealed with a resin, cracks and shifts 26 were found in the corner adjacent region 25 having a length of 3 to 4 mm. It is an object of the present invention to provide a semiconductor device in which cracks due to stress and sliding of a wiring conductor film are prevented to improve wiring reliability.

[0005]

According to the present invention, there is provided a semiconductor device having a wiring conductor film formed along a peripheral portion on a semiconductor substrate with an insulation film interposed therebetween, wherein an insulation film covering the wiring conductor film is formed. A semiconductor device, wherein a dummy conductor film is formed along the wiring conductor film in an area adjacent to a corner in a peripheral portion of the semiconductor device and covering the wiring conductor film from above the insulating film. .

[0006]

Next, the present invention will be described with reference to the drawings. FIGS. 1A and 1B are a plan view of a semiconductor device according to a first embodiment of the present invention and a sectional view taken along line AA of the semiconductor device. A field oxide film 19 of, for example, 1.0 μm is formed on one main surface of the semiconductor substrate 10 to divide the semiconductor element region 11, and a first interlayer insulating film such as a 1.0 μm-thick phosphor silicate glass film is formed thereon. The conductor film 12 is formed to include the internal wiring conductor film 12 of 0.5 μm or the like and the first wiring conductor film 13 in the periphery of the semiconductor device through the interlayer insulating film 20.

A second wiring conductor film 14 around a semiconductor device, such as aluminum, having a thickness of 1.0 μm is bonded via a second interlayer insulating film 21 such as a plasma oxide film having a thickness of 1.0 μm. It is formed including the pad portion 18. Further, a 1.3 μm-thick dummy conductor film 15 made of aluminum or the like is formed thereon via a third interlayer insulating film 22 such as a 1.0 μm-thick plasma oxide film. This dummy conductor film 15
It is formed so as to cover the two wiring conductor films 14 in a region 25 adjacent to the corner of the semiconductor device. in addition,
After the insulating film 23 is covered with a protective insulating film 23 such as a phosphor silicate glass or a silicon nitride film having a thickness of 1.0 μm, only the bonding pad portion is etched to expose the bonding pad portion to form a desired structure. obtain.

According to this structure, a stress is generated in the semiconductor device sealed with the resin toward the center direction.
At this time, the two second wiring conductor films are disposed on the second wiring conductor film 14 arranged in the region 25 adjacent to the corner in the peripheral portion of the semiconductor device via the third interlayer insulating film 22. 14
Is provided so as to cover the dummy conductor film 15, the stress is directly applied to the dummy conductor film 15 and is absorbed or reduced here. This can prevent the occurrence of cracks in the interlayer insulating film 22 covering the second wiring conductor film 14 and the occurrence of displacement of the second wiring conductor film 14 in the corner adjacent region 25. In the case where the dummy conductor film 15 is made of aluminum, the width of the dummy conductor film 15 is two times larger than that of the second wiring conductor film 14.
It is suitably larger by 0 μm, and the effect of stress resistance is also large.

FIGS. 2A and 2B are a plan view and a sectional view taken along line BB of a second embodiment of the present invention. The same parts as those in the embodiment of FIG. 1 are denoted by the same reference numerals. In this embodiment, the dummy conductor film 15 is formed so as to cover only the second wiring conductor film 14 adjacent to the corner area around the semiconductor device. Also in this embodiment, the dummy conductor film 1 is used.
5 can absorb or relieve stress,
Crack prevention of the interlayer insulating film 22 and the second wiring conductor film 1
4 can be effectively prevented. When the dummy conductor film 15 is made of aluminum, its width is suitably larger than that of the second wiring conductor film 14 by 20 μm, and the effect of stress resistance is great.

[0010]

As described above, according to the present invention, an insulating film is formed to cover a wiring conductor film, and the insulating film is formed along the wiring conductor film in a region adjacent to a corner in a peripheral portion of a semiconductor device and above the insulating film. Since the dummy conductor film covering the wiring conductor film is formed from above, the stress generated from the sealing resin or the like is absorbed or reduced by the dummy conductor film so as not to be applied to the wiring conductor film. Can be. This has the effect of preventing the occurrence of cracks in the insulating film or the like surrounding the wiring conductor film and the displacement of the wiring conductor film, thereby significantly improving the reliability of the wiring.

[Brief description of the drawings]

FIG. 1 is a plan view of a peripheral portion of a first embodiment of the present invention and FIG.
FIG. 4 is a cross-sectional view taken along a line A.

FIG. 2 is a plan view of a peripheral portion of a second embodiment of the present invention and FIG.
FIG. 4 is a cross-sectional view taken along line B.

FIG. 3 is a plan view of an example of a conventional semiconductor device and its CC.
It is a line sectional view.

FIG. 4 is a model diagram for explaining sliding of a wiring conductive film.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Semiconductor substrate 12, 13 First wiring conductor film 14 Second wiring conductor film 15 Dummy conductor film 20 First interlayer insulating film 21 Second interlayer insulating film 22 Third interlayer insulating film 23 For protection Insulating film

Claims (1)

(57) [Claims] 1. A semiconductor substrate is formed along an edge of a semiconductor substrate via an insulating film.
In the semiconductor device in which the wiring conductor film is formed as described above, an insulating film covering the wiring conductor film is formed, and is located along the wiring conductor film in a region adjacent to a corner in a peripheral portion of the semiconductor device and above the insulating film. Forming a dummy conductor film covering the wiring conductor film.