JPH06302722A - Heat dissipation member and semiconductor package using same - Google Patents

Heat dissipation member and semiconductor package using same

Info

Publication number
JPH06302722A
JPH06302722A JP5116358A JP11635893A JPH06302722A JP H06302722 A JPH06302722 A JP H06302722A JP 5116358 A JP5116358 A JP 5116358A JP 11635893 A JP11635893 A JP 11635893A JP H06302722 A JPH06302722 A JP H06302722A
Authority
JP
Japan
Prior art keywords
resin
heat dissipation
package
semiconductor element
dissipation member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP5116358A
Other languages
Japanese (ja)
Inventor
Yoji Kawakami
洋司 川上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP5116358A priority Critical patent/JPH06302722A/en
Publication of JPH06302722A publication Critical patent/JPH06302722A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To obtain a heat dissipation member, which never deforms resin parts and can be increased its holding properties by the resin parts, and a semiconductor package using this heat dissipation member. CONSTITUTION:A heat dissipation member 10 consists of a flat plate-shaped heat dissipation part 11 having an area larger than that of a semiconductor element 6 and extension parts 12 to extent in a parallel form from each side of the heat dissipation part 11 outward of the interior of a package. The surface on one side of the surfaces of the part 11 is brought into contact to the rear of the element 6, the other surface of the part 11 is made to expose to the outer surface of the package and at the same time, the parts 12 are completely covered with each resin part 17. The direction of shrinkage of a resin subsequent to a resin molding is dispersed to the sides of both surfaces of each extension part 12 and the deformation to one direction of each resin part 17 is prevented from being generated. As the parts 12 are respectively covered completely with each resin part 17, the holding properties of the member 10 are increased by the resin parts 17. A plurality of notch holes 14 for increasing the fluidity of the resin are respectively provided in the extension parts 12.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体素子が発生する
熱を放熱する放熱部材及びこの放熱部材を用いた半導体
パッケージに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat radiating member for radiating heat generated by a semiconductor element and a semiconductor package using the heat radiating member.

【0002】[0002]

【従来の技術】従来、放熱部材を用いた半導体パッケー
ジとして、例えば図5に示すように、フィルム基材21
のリード22にボンディングされた半導体素子23を放
熱板24上に固着し、上型と下型とからなる金型(図示
せず)で挟持して、樹脂25により樹脂封止を行った半
導体パッケージ26があった。この従来例においては、
放熱板24の一方の面が半導体素子23の裏面に接触
し、他方の面が樹脂部25の外面に露出しており、半導
体素子23から発生する熱が放熱板24を介して外部に
放散される。
2. Description of the Related Art Conventionally, as a semiconductor package using a heat dissipation member, as shown in FIG.
A semiconductor package in which a semiconductor element 23 bonded to the lead 22 is fixed on a heat dissipation plate 24, sandwiched by a mold (not shown) composed of an upper mold and a lower mold, and resin-sealed with a resin 25. There was 26. In this conventional example,
One surface of the heat dissipation plate 24 is in contact with the back surface of the semiconductor element 23 and the other surface is exposed to the outer surface of the resin portion 25, and the heat generated from the semiconductor element 23 is dissipated to the outside through the heat dissipation plate 24. It

【0003】[0003]

【発明が解決しようとする課題】しかしながら、上述し
たような従来の半導体パッケージ26においては、パッ
ケージ26の一方の面に大きな面積の放熱板24が露出
しているため、樹脂成型後の樹脂収縮が放熱板24のな
い側に集中し、これによって、樹脂部25の面25aが
面25bのように変形し、半導体素子23への不要な内
部応力が増加したり、樹脂部25から突出する外部リー
ド22′の高さが変動したりするという問題があった。
However, in the conventional semiconductor package 26 as described above, since the heat dissipation plate 24 having a large area is exposed on one surface of the package 26, the resin shrinkage after the resin molding occurs. The surface 25a of the resin portion 25 is deformed like the surface 25b by concentrating on the side where the heat dissipation plate 24 is not present, increasing unnecessary internal stress to the semiconductor element 23, and external leads protruding from the resin portion 25. There is a problem that the height of 22 'varies.

【0004】また、従来の半導体パッケージ26におい
ては、放熱板24の片面及び周縁のみが樹脂部25と接
触している構造となるので、樹脂部25による放熱板2
4の保持性が悪く、樹脂収縮の際に場合によっては放熱
板24と樹脂部25とが剥離してしまうという問題があ
った。
Further, in the conventional semiconductor package 26, since only one surface and the peripheral edge of the heat dissipation plate 24 are in contact with the resin portion 25, the heat dissipation plate 2 formed by the resin portion 25 is used.
However, there is a problem that the heat dissipation plate 24 and the resin portion 25 are separated from each other in some cases when the resin shrinks.

【0005】そこで本発明は、上記課題を解決するため
になされたもので、樹脂部を変形させることなく、しか
も樹脂部による保持性を高くすることができる放熱部材
及びこの放熱部材を用いた半導体パッケージを提供する
ことを目的とする。
Therefore, the present invention has been made in order to solve the above-mentioned problems, and it is a heat dissipating member which does not deform the resin part and can improve the holding property by the resin part, and a semiconductor using this heat dissipating member. Intended to provide the package.

【0006】[0006]

【課題を解決するための手段】上記目的を達成するため
に、本発明は、半導体パッケージ中に樹脂封止された半
導体素子が発生する熱を放熱する放熱部材において、前
記半導体素子よりも大きい面積を有し前記半導体素子の
裏面を覆う平板状放熱部に、その各辺からパッケージ内
の外方へ広がりかつ樹脂部に完全に覆われる延出部を設
けたものである。
In order to achieve the above object, the present invention provides a heat dissipation member for dissipating heat generated by a resin-sealed semiconductor element in a semiconductor package, which has a larger area than the semiconductor element. In the flat plate-shaped heat dissipation part having the above-mentioned structure and covering the back surface of the semiconductor element, there are provided extending parts that extend outward from the respective sides of the package and are completely covered by the resin part.

【0007】また、本発明は、多数の導電性リードを有
する絶縁性フィルム基材に半導体素子を搭載して樹脂封
止を行った半導体パッケージにおいて、前記半導体素子
よりも大きい面積を有する平板状放熱部と、その各辺か
らパッケージ内の外方へ広がる延出部とからなる放熱部
材を備え、前記平板状放熱部の一方の面を前記半導体素
子の裏面に接触させかつ他方の面をパッケージの外面に
露出させるとともに、前記延出部を樹脂部により完全に
覆ったものである。
Further, according to the present invention, in a semiconductor package in which a semiconductor element is mounted on an insulating film substrate having a large number of conductive leads and resin-sealed, a flat heat dissipation having a larger area than the semiconductor element is provided. And a heat dissipation member consisting of an extension extending from each side to the outside of the package, and one surface of the flat heat dissipation part is brought into contact with the back surface of the semiconductor element and the other surface of the package is provided. The resin is exposed on the outer surface, and the extending portion is completely covered with a resin portion.

【0008】なお、前記各構成において、前記延出部が
パッケージ平面とほぼ平行に広がっているとよく、さら
に、前記延出部に切欠部が設けられているとよい。ま
た、特に前記半導体パッケージにおいては、前記延出部
の端部を前記フィルム基材に当接させるとよい。
In each of the above constructions, it is preferable that the extending portion extends substantially parallel to the package plane, and further that the extending portion is provided with a cutout portion. Further, particularly in the semiconductor package, it is preferable that the end portion of the extending portion is brought into contact with the film base material.

【0009】[0009]

【作用】上記のように構成された本発明によれば、平板
状放熱部の他方の面がパッケージの外面に露出される
が、この平板状放熱部の各辺に設けられた延出部はパッ
ケージ内の外方へ広がって樹脂部により完全に覆われる
ので、樹脂成型後の樹脂の収縮方向が延出部の両面側に
分散されることになり、樹脂部の一方向への変形が防止
される。
According to the present invention constructed as described above, the other surface of the flat plate-shaped heat radiating portion is exposed to the outer surface of the package. Since it spreads outward in the package and is completely covered by the resin part, the shrinkage direction of the resin after resin molding is distributed to both sides of the extension part, preventing the resin part from deforming in one direction. To be done.

【0010】また、平板状放熱部をパッケージの外面に
露出させた構造であっても、延出部が樹脂部によって完
全に覆われるので、樹脂部による放熱部材の保持性が大
幅に高められる。
Further, even in the structure in which the flat plate-shaped heat radiating portion is exposed to the outer surface of the package, since the extending portion is completely covered with the resin portion, the resin portion can greatly improve the holding property of the heat radiating member.

【0011】なお、延出部をパッケージ平面とほぼ平行
に広げると、上記樹脂の収縮方向の分散がより均一化さ
れるとともに、パッケージの薄型化が容易になる。さら
に、延出部に切欠部を設けると、樹脂封止の際の樹脂の
流動を妨げることなく、パッケージの成型がより確実に
行われる。また、特に半導体パッケージにおいて延出部
の端部をフィルム基材に当接させると、樹脂注入時のフ
ィルム基材の下方への変動が防止される。
If the extending portion is expanded substantially parallel to the plane of the package, the dispersion of the resin in the shrinking direction can be made more uniform and the package can be made thinner easily. Furthermore, when the cutout portion is provided in the extending portion, the molding of the package can be performed more reliably without hindering the flow of the resin during the resin sealing. Further, particularly in the semiconductor package, when the end of the extending portion is brought into contact with the film base material, the downward movement of the film base material during resin injection is prevented.

【0012】[0012]

【実施例】以下、本発明の実施例を図1〜図4を参照し
て説明する。図1は第1実施例における半導体パッケー
ジの断面図、図2は図1の半導体パッケージに用いられ
た放熱部材の上面図、図3は図2の放熱部材のA−A線
における断面図である。
Embodiments of the present invention will be described below with reference to FIGS. 1 is a sectional view of a semiconductor package in the first embodiment, FIG. 2 is a top view of a heat dissipation member used in the semiconductor package of FIG. 1, and FIG. 3 is a sectional view of the heat dissipation member of FIG. 2 taken along the line AA. .

【0013】まず、図1に示すように、この半導体パッ
ケージ1においては、絶縁性のフィルム基材2とこれに
パターン形成されている多数の導電性のリード3とから
なるフィルムキャリア4が用いられ、このフィルムキャ
リア4におけるデバイス孔5の内側に突出しているイン
ナーリード3aに、半導体素子6がバンプ7を介してイ
ンナーリードボンディングにより接続されている。
First, as shown in FIG. 1, in this semiconductor package 1, a film carrier 4 comprising an insulating film base material 2 and a large number of conductive leads 3 patterned on the insulating film base material 2 is used. The semiconductor element 6 is connected to the inner lead 3 a projecting inside the device hole 5 in the film carrier 4 via the bump 7 by inner lead bonding.

【0014】そして、前記フィルムキャリア4に搭載さ
れた前記半導体素子6の裏面に、放熱部材10が接着さ
れている。
A heat radiating member 10 is adhered to the back surface of the semiconductor element 6 mounted on the film carrier 4.

【0015】ここで、図2及び図3に示すように、放熱
部材10は、アルミニウムや銅などの熱伝導性の良い金
属材料によって一体的に形成されており、平板状放熱部
11と延出部12とからなるものである。
Here, as shown in FIGS. 2 and 3, the heat dissipation member 10 is integrally formed of a metal material having good heat conductivity such as aluminum or copper, and extends with the flat plate heat dissipation portion 11. And the part 12.

【0016】前記平板状放熱部11は、半導体素子6の
形状に対応してほぼ正方形状をなし、半導体素子6の底
面よりも大きい面積を有している。そして、前記延出部
12は、平板状放熱部11の4辺から上方に緩やかに屈
曲して外方へ平行状に広がっている。また、各辺の延出
部12の間には切欠溝13が設けられている。さらに、
各々の延出部12には、樹脂封止の際の樹脂の流動性を
高くするための複数の切欠孔14が設けられている。な
お、本実施例ではこれら複数の切欠孔14によって延出
部12の切欠部を構成したが、この切欠部の形状や個数
等は適宜に変更可能である。
The plate-shaped heat dissipation portion 11 has a substantially square shape corresponding to the shape of the semiconductor element 6, and has a larger area than the bottom surface of the semiconductor element 6. The extending portion 12 is gently bent upward from the four sides of the plate-shaped heat radiating portion 11 and spreads outward in parallel. Further, a cutout groove 13 is provided between the extending portions 12 on each side. further,
Each of the extending portions 12 is provided with a plurality of cutout holes 14 for increasing the fluidity of the resin at the time of resin sealing. In addition, in the present embodiment, the plurality of notch holes 14 constitute the notch portion of the extending portion 12, but the shape, number, etc. of the notch portion can be appropriately changed.

【0017】図1に示すように、放熱部材10の平板状
放熱部11上に載置された前記半導体素子6は、導電性
及び放熱性を有する接着剤16によって接着される。な
お、接着剤16としては例えば銀ペースト等が用いられ
る。
As shown in FIG. 1, the semiconductor element 6 placed on the flat plate-shaped heat dissipation portion 11 of the heat dissipation member 10 is adhered by an adhesive 16 having conductivity and heat dissipation. As the adhesive 16, for example, silver paste or the like is used.

【0018】そして、半導体素子6を搭載したフィルム
キャリア4と放熱部材10とは、上型と下型とからなる
金型(図示せず)によって挟持され、樹脂17によって
封止される。
The film carrier 4 having the semiconductor element 6 mounted thereon and the heat dissipation member 10 are sandwiched by a mold (not shown) composed of an upper mold and a lower mold, and sealed with a resin 17.

【0019】この樹脂封止の際、放熱部材10の平板状
放熱部11の他方の面は樹脂部17の外面に露出される
が、放熱部材10の延出部12はパッケージ内の外方へ
広がって樹脂部17によって完全に覆われる。これによ
り、樹脂成型後の樹脂の収縮方向が延出部12の両面側
に分散されることになり、樹脂部17の一方向への変形
を防止することができる。従って、半導体素子6に不要
な内部応力が加わることはなく、樹脂部17から突出す
るアウターリード3bの高さが変動することもない。
At the time of this resin sealing, the other surface of the flat plate-shaped heat radiating portion 11 of the heat radiating member 10 is exposed to the outer surface of the resin portion 17, but the extending portion 12 of the heat radiating member 10 is directed outside the package. It spreads and is completely covered by the resin portion 17. As a result, the shrinkage direction of the resin after resin molding is dispersed on both surface sides of the extending portion 12, and it is possible to prevent the resin portion 17 from being deformed in one direction. Therefore, unnecessary internal stress is not applied to the semiconductor element 6, and the height of the outer lead 3b protruding from the resin portion 17 does not change.

【0020】また、平板状放熱部11を樹脂部17の外
面に露出させた構造であっても、延出部12が樹脂部1
7によって完全に覆われるので、樹脂部17による放熱
部材10の保持性を大幅に高めることができ、放熱部材
10と樹脂部17との剥離を防止することができる。
Further, even in the structure in which the flat plate-shaped heat dissipation portion 11 is exposed on the outer surface of the resin portion 17, the extension portion 12 has the resin portion 1
Since it is completely covered by 7, the holding property of the heat dissipation member 10 by the resin part 17 can be significantly improved, and the heat dissipation member 10 and the resin part 17 can be prevented from peeling off.

【0021】なお、延出部12がパッケージ平面と平行
に広がっているので、上記樹脂の収縮方向の分散がより
均一化されるとともに、パッケージの薄型化が可能とな
る。さらに、延出部12に切欠部14を設けているの
で、樹脂封止の際の樹脂の流動は極めて良好で、パッケ
ージの成型をより確実に行うことができる。また、本実
施例では、各辺の延出部12の間に切欠溝13を設けて
いるので、各コーナー部においても樹脂の流動を良好に
することができる。
Since the extending portion 12 extends in parallel with the plane of the package, the dispersion of the resin in the shrinking direction can be made more uniform and the package can be made thinner. Further, since the extending portion 12 is provided with the notch portion 14, the flow of the resin at the time of resin sealing is extremely good, and the molding of the package can be performed more reliably. Further, in the present embodiment, since the notch groove 13 is provided between the extending portions 12 on each side, the resin flow can be made good even at each corner portion.

【0022】次に、図4は第2実施例における半導体パ
ッケージの断面図である。なお、第1実施例と実質的に
同一の構成部分には同一の符号を付してその説明を省略
する。
Next, FIG. 4 is a sectional view of a semiconductor package according to the second embodiment. The same components as those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted.

【0023】この第2実施例が第1実施例と異なる点
は、放熱部材10の延出部12の外周に屈曲部15を設
け、この屈曲部15の先端をフィルム基材2の下面に当
接させて、フィルム基材2を支持したことである。
The second embodiment is different from the first embodiment in that a bent portion 15 is provided on the outer periphery of the extending portion 12 of the heat dissipation member 10, and the tip of the bent portion 15 contacts the lower surface of the film substrate 2. That is, the film base material 2 was supported by being brought into contact with each other.

【0024】この第2実施例によれば、屈曲部15の先
端によって、樹脂注入時にフィルムキャリア4の下方へ
の変動が防止され、より安定した樹脂成型を行うことが
できる。また、この例において、フィルム基材2の下面
に導電性部材を配し、屈曲部15とフィルム基材2とを
導電性を有する接着剤で接着した場合には、放熱性の向
上と共に、より効果的な電気特性の向上(例えば動作時
のノイズ防止等)を図ることができる。
According to the second embodiment, the tip of the bent portion 15 prevents downward movement of the film carrier 4 during resin injection, and more stable resin molding can be performed. In addition, in this example, when a conductive member is arranged on the lower surface of the film base material 2 and the bent portion 15 and the film base material 2 are bonded with an adhesive having a conductive property, heat dissipation is improved and It is possible to effectively improve electric characteristics (for example, to prevent noise during operation).

【0025】以上、本発明の実施例に付き説明したが、
本発明は上記実施例に限定されることなく、本発明の技
術的思想に基づいて各種の有効な変更並びに応用が可能
である。
The embodiment of the present invention has been described above.
The present invention is not limited to the above embodiments, and various effective modifications and applications are possible based on the technical idea of the present invention.

【0026】[0026]

【発明の効果】以上説明したように、本発明によれば、
半導体素子よりも大きい面積を有し半導体素子の裏面を
覆う平板状放熱部に、その各辺からパッケージ内の外方
へ広がりかつ樹脂部に完全に覆われる延出部を設けるこ
とによって、樹脂成型後の樹脂の収縮方向を分散させ、
樹脂部の一方向への変形を防止することができる。これ
により、半導体素子への不要な内部応力の増加や外部リ
ードの高さの変動等を防止することができ、信頼性の高
い放熱型パッケージを得ることができる。
As described above, according to the present invention,
By molding an extension part that has a larger area than the semiconductor element and covers the back surface of the semiconductor element and that extends from each side outward in the package and is completely covered by the resin part, resin molding Disperses the shrinkage direction of the resin afterwards,
It is possible to prevent the resin portion from being deformed in one direction. As a result, it is possible to prevent an increase in unnecessary internal stress on the semiconductor element, a change in the height of the external leads, and the like, and it is possible to obtain a highly reliable heat dissipation package.

【0027】また、平板状放熱部をパッケージの外面に
露出させた構造であっても、延出部が樹脂部によって完
全に覆われるので、樹脂部による放熱部材の保持性を大
幅に高めることができる。これによって、放熱部材と樹
脂部との不測な剥離を防止することができ、放熱型パッ
ケージの放熱機能を効果的に発揮させることができる。
Further, even in the structure in which the flat plate-shaped heat radiating portion is exposed to the outer surface of the package, since the extending portion is completely covered by the resin portion, the holding ability of the heat radiating member by the resin portion can be greatly improved. it can. As a result, it is possible to prevent accidental separation between the heat dissipation member and the resin portion, and it is possible to effectively exhibit the heat dissipation function of the heat dissipation package.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1実施例における半導体パッケージ
の断面図である。
FIG. 1 is a sectional view of a semiconductor package according to a first embodiment of the present invention.

【図2】上記半導体パッケージに用いられた放熱部材の
上面図である。
FIG. 2 is a top view of a heat dissipation member used in the semiconductor package.

【図3】図2の放熱部材のA−A線における断面図であ
る。
FIG. 3 is a cross-sectional view taken along line AA of the heat dissipation member of FIG.

【図4】本発明の第2実施例における半導体パッケージ
の断面図である。
FIG. 4 is a sectional view of a semiconductor package according to a second embodiment of the present invention.

【図5】従来の放熱板を用いた半導体パッケージの断面
図である。
FIG. 5 is a sectional view of a semiconductor package using a conventional heat sink.

【符号の説明】[Explanation of symbols]

1 半導体パッケージ 2 フィルム基材 3 リード 4 フィルムキャリア 6 半導体素子 10 放熱部材 11 平板状放熱部 12 延出部 13 切欠溝 14 切欠孔 15 屈曲部 16 接着剤 17 樹脂部 1 Semiconductor Package 2 Film Base Material 3 Lead 4 Film Carrier 6 Semiconductor Element 10 Heat Dissipating Member 11 Flat Heat Dissipating Part 12 Extending Part 13 Notch Groove 14 Notch Hole 15 Bending Part 16 Adhesive 17 Resin Part

フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 23/50 F 9272−4M Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H01L 23/50 F 9272-4M

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 半導体パッケージ中に樹脂封止された半
導体素子が発生する熱を放熱する放熱部材において、 前記半導体素子よりも大きい面積を有し前記半導体素子
の裏面を覆う平板状放熱部に、その各辺からパッケージ
内の外方へ広がりかつ樹脂部に完全に覆われる延出部を
設けたことを特徴とする放熱部材。
1. A heat radiating member for radiating heat generated by a semiconductor element encapsulated in a resin in a semiconductor package, the flat heat radiating portion having a larger area than the semiconductor element and covering a back surface of the semiconductor element, A heat dissipating member, characterized in that it has an extending portion that extends outward from each side of the package and is completely covered by the resin portion.
【請求項2】 前記延出部がパッケージ平面とほぼ平行
に広がっていることを特徴とする請求項1記載の放熱部
材。
2. The heat dissipation member according to claim 1, wherein the extending portion extends substantially parallel to the plane of the package.
【請求項3】 前記延出部に切欠部が設けられているこ
とを特徴とする請求項1記載の放熱部材。
3. The heat dissipation member according to claim 1, wherein a cutout portion is provided in the extending portion.
【請求項4】 多数の導電性リードを有する絶縁性フィ
ルム基材に半導体素子を搭載して樹脂封止を行った半導
体パッケージにおいて、 前記半導体素子よりも大きい面積を有する平板状放熱部
と、その各辺からパッケージ内の外方へ広がる延出部と
からなる放熱部材を備え、前記平板状放熱部の一方の面
を前記半導体素子の裏面に接触させかつ他方の面をパッ
ケージの外面に露出させるとともに、前記延出部を樹脂
部により完全に覆ったことを特徴とする半導体パッケー
ジ。
4. A semiconductor package in which a semiconductor element is mounted on an insulating film base material having a large number of conductive leads and resin-sealed, and a flat heat dissipation portion having an area larger than that of the semiconductor element, and A heat radiating member including an extension extending from each side to the outside of the package is provided, and one surface of the plate-shaped heat radiating portion is in contact with the back surface of the semiconductor element and the other surface is exposed to the outer surface of the package. At the same time, the semiconductor package is characterized in that the extending portion is completely covered with a resin portion.
【請求項5】 前記放熱部材の前記延出部がパッケージ
平面とほぼ平行に広がっていることを特徴とする請求項
4記載の半導体パッケージ。
5. The semiconductor package according to claim 4, wherein the extension portion of the heat dissipation member extends substantially parallel to the package plane.
【請求項6】 前記放熱部材の前記延出部に切欠部が設
けられていることを特徴とする請求項4記載の半導体パ
ッケージ。
6. The semiconductor package according to claim 4, wherein a cutout portion is provided in the extending portion of the heat dissipation member.
【請求項7】 前記放熱部材の前記延出部の端部を前記
フィルム基材に当接させたことを特徴とする請求項4記
載の半導体パッケージ。
7. The semiconductor package according to claim 4, wherein an end portion of the extending portion of the heat dissipation member is brought into contact with the film base material.
JP5116358A 1993-04-19 1993-04-19 Heat dissipation member and semiconductor package using same Withdrawn JPH06302722A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5116358A JPH06302722A (en) 1993-04-19 1993-04-19 Heat dissipation member and semiconductor package using same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5116358A JPH06302722A (en) 1993-04-19 1993-04-19 Heat dissipation member and semiconductor package using same

Publications (1)

Publication Number Publication Date
JPH06302722A true JPH06302722A (en) 1994-10-28

Family

ID=14684987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5116358A Withdrawn JPH06302722A (en) 1993-04-19 1993-04-19 Heat dissipation member and semiconductor package using same

Country Status (1)

Country Link
JP (1) JPH06302722A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000049656A1 (en) * 1999-02-17 2000-08-24 Hitachi, Ltd. Semiconductor device and method of manufacture thereof
US6232558B1 (en) 1997-04-30 2001-05-15 Ibiden Co., Ltd. Electronic component mounting base board having heat slug with slits and projections
JP2006210909A (en) * 2005-01-28 2006-08-10 Samsung Electro-Mechanics Co Ltd Side view led package having lead frame structure adapted to improve resin flow
JP2007311579A (en) * 2006-05-19 2007-11-29 Matsushita Electric Ind Co Ltd Lead frame and semiconductor device using the same
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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232558B1 (en) 1997-04-30 2001-05-15 Ibiden Co., Ltd. Electronic component mounting base board having heat slug with slits and projections
WO2000049656A1 (en) * 1999-02-17 2000-08-24 Hitachi, Ltd. Semiconductor device and method of manufacture thereof
US6573119B1 (en) 1999-02-17 2003-06-03 Hitachi, Ltd. Semiconductor device and method of manufacture thereof
JP2006210909A (en) * 2005-01-28 2006-08-10 Samsung Electro-Mechanics Co Ltd Side view led package having lead frame structure adapted to improve resin flow
JP4738250B2 (en) * 2006-05-19 2011-08-03 パナソニック株式会社 Semiconductor device
JP2007311579A (en) * 2006-05-19 2007-11-29 Matsushita Electric Ind Co Ltd Lead frame and semiconductor device using the same
JP2008300587A (en) * 2007-05-31 2008-12-11 Renesas Technology Corp Semiconductor device and manufacturing method thereof
US9466548B2 (en) 2012-02-22 2016-10-11 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing semiconductor device
DE112012005920B4 (en) 2012-02-22 2022-03-24 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing a semiconductor device
WO2015033209A1 (en) * 2013-09-06 2015-03-12 Toyota Jidosha Kabushiki Kaisha Semiconductor device, and manufacturing method for semiconductor device
JP2015053379A (en) * 2013-09-06 2015-03-19 トヨタ自動車株式会社 Semiconductor device, and method for manufacturing semiconductor device
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US9640491B2 (en) 2013-09-06 2017-05-02 Toyota Jidosha Kabushiki Kaisha Semiconductor device having semiconductor elements connected to an intermediate plate by a brazing filler metal, and manufacturing method for semiconductor device
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