JPH08286210A - Liquid crystal display device and its production - Google Patents

Abstract

PURPOSE: To suppress the occurrence of a disconnection of upper layer wirings by adopting the constitution in which the sectional shape of lower layer wirings or the sectional shapes of the lower layer wirings and insulatable films have a difference in level. CONSTITUTION: This liquid crystal display device has the lower layer wirings 2, the insulatable films 3 formed on the surfaces of the lower layer wirings 2 and the upper layer wirings 4 formed on the insulatable films 3. The sectional shape of the lower layer wirings 2 or the sectional shapes of the lower layer wirings 2 and the insulatable films 3 have the difference in level. The ground surfaces for forming the upper layer wirings 4 are all the insulatable films 3 formed by an anodic oxidation method near the active element regions. The size of the difference in level at which the upper layer wirings 4 overlap at one time is, therefore, reduced. The disturbance in the crystallinity of the upper layer wiring materials in the regions to be overlapped is consequently lessened. The films forming the upper layer wirings 4 dot not produce a difference in the film quality near the active elements. Then, the upper layer wirings 4 are liable to be overlapped and further, the difference in the film quality near the active elements does not arise and, therefore, the pixel defects in the stepped parts by the disconnection are decreased.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a liquid crystal display device and a method of manufacturing the same, and more particularly, to a lower layer wiring or a sectional shape structure of an insulating film which constitutes an active element for driving a liquid crystal. And a manufacturing method for forming the structure.

[0002]

2. Description of the Related Art A conventional active element for driving a liquid crystal to display a predetermined image will be described with reference to the drawings.
As shown in FIG. 2, the cross-sectional shape of the lower layer wiring 2 forming the active element formed on the glass substrate 1 is vertical, or as shown in FIG. 3, the cross-sectional shape of the lower layer wiring 2 is tapered. Are doing

This is because the patterning of the lower layer wiring 2 pattern is usually performed by only one etching step.

As a method of forming an active element of a liquid crystal display device, first, a lower wiring 2 material is formed by a sputtering method or a chemical vapor deposition method. Then, a pattern of a resist (not shown) is formed on the material of the lower layer wiring 2 by a photolithography method.

Thereafter, as shown in FIG. 2 or 3,
Using the patterned resist as an etching mask, the pattern of the lower wiring 2 is formed by a wet etching method or a dry etching method.

At this time, it is difficult to control the etching shape by the wet etching method. However, in the dry etching method, the etching cross section of the lower layer wiring 2 material can be tapered by controlling the etching rate ratio between the resist and the lower layer wiring 2 material.

Next, as shown in FIG. 8 or 9,
An insulating film 3 is formed on the pattern of the lower wiring 2 by anodizing.

Further, a material for the upper wiring 4 is formed on the insulating film 3 by a sputtering method or a chemical vapor deposition method. Then, a pattern of resist (not shown) is formed on the material of the upper layer wiring 4 by a photolithography method.

Thereafter, using the patterned resist as an etching mask, patterning is performed by a wet etching method or a dry etching method to form an upper wiring 4 pattern to form an active element.

[0010]

When forming an active element, the upper layer wiring 4 should always be used with respect to the lower layer wiring 2.
Must have overlapping areas. In this overlap region, disconnection occurs at the step portion of the overlapping upper layer wiring 4. This state is shown in FIGS. 8 and 9.

This is because, as shown in FIG. 8, the glass substrate 1 and the insulating film 3 have different bases on which the film to be the upper wiring 4 grows, so that the film quality of the growing film has a boundary.
Furthermore, since the growth direction of the coating film that becomes the upper layer wiring 4 is different between the glass substrate 1 and the etched side surface region of the lower layer wiring 2, the growth directions of the coating films collide with each other at the boundary, and the crystallinity is disturbed. .

Therefore, in the boundary region between the glass substrate 1 and the insulating film 3, the film to be the upper layer wiring 4 has a different film quality and the crystallinity is disturbed, and the film becomes weaker than other regions and is easily broken. When such disconnection occurs, this pixel becomes defective and the display quality of the liquid crystal display device deteriorates.

In particular, when the insulating film 3 is formed on the lower layer wiring 2 by the anodic oxidation method and the upper layer wiring 4 is patterned on the insulating film 3, there is a serious problem.

This is because in the formation of the insulating film 3 by the anodic oxidation method, the insulating film 3 grows isotropically. Therefore, even if the cross-sectional shape of the lower layer wiring 2 formed on the glass substrate 1 is tapered during etching, the shape of the insulating film 3 is not preserved as shown in FIG.
At the boundary between and, the tapered shape is not preserved, and the effect of the tapered shape decreases. Therefore, the disconnection still occurs.

An object of the present invention is to solve the above problems and provide a structure of a liquid crystal display device capable of suppressing the occurrence of disconnection of upper layer wiring, and a manufacturing method for forming this structure. is there.

[0016]

In order to achieve the above object, the structure of the liquid crystal display device of the present invention and the manufacturing method thereof adopt the following means.

The liquid crystal display device of the present invention is characterized by including a lower layer wiring, an insulating film, and an upper layer wiring, and the lower layer wiring or the sectional shape of the lower layer wiring and the insulating film has a step.

In the method of manufacturing a liquid crystal display device according to the present invention, a lower layer wiring material is formed into a film on a glass substrate, a resist pattern is formed on the lower layer wiring material by a photolithography method, and this resist is used as an etching mask for dry etching. Method to reduce the pattern size of the resist by ashing the resist after etching the lower layer wiring material by the wet etching method or the wet etching method, and using the resist having the reduced pattern size as an etching mask to increase the thickness by the dry etching method or the wet etching method. Etching the lower layer wiring material to the middle of the vertical direction to form the lower layer wiring,
An insulating film and an upper layer wiring are formed on the lower layer wiring.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed into a film on a glass substrate, and a first resist pattern is formed on the lower layer wiring material by photolithography. The lower layer wiring material is etched by the dry etching method or the wet etching method using the first resist as an etching mask, and then the first resist is peeled off, and the pattern dimension on the lower layer wiring material pattern is smaller than that of the first resist. A pattern of a second resist is formed, and further, the lower layer wiring material is etched halfway in the thickness direction by a dry etching method or a wet etching method using the second resist as an etching mask to form a lower layer wiring. An insulating film and an upper layer wiring are formed on the wiring.

Still another method of manufacturing a liquid crystal display device according to the present invention is to form a film of a lower layer wiring material on a glass substrate, form a resist pattern on the lower layer wiring material by a photolithography method, and then form this resist. After etching the lower layer wiring material halfway in the thickness direction by using the as an etching mask by the dry etching method or the wet etching method, the resist pattern size is reduced by ashing the resist, and the resist with the reduced pattern size is used. It is characterized in that the lower layer wiring material is etched by a dry etching method or a wet etching method as an etching mask to form a lower layer wiring, and an insulating film and an upper layer wiring are formed on the lower layer wiring.

Further, in another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed into a film on a glass substrate, and a first resist pattern is formed on the lower layer wiring material by photolithography. Using the first resist as an etching mask, the lower layer wiring material is etched halfway in the thickness direction by a dry etching method or a wet etching method, and then the first resist is peeled off, and the lower layer wiring material is further photolithographically processed. A pattern of a second resist having a pattern size smaller than that of the first resist is formed on the pattern, and the lower layer wiring material is etched by dry etching or wet etching using the second resist as an etching mask. Forming an insulating film on this lower layer wiring And forming an upper layer wiring.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed into a film on a glass substrate, and a first resist pattern is formed on the lower layer wiring material by photolithography. Using the first resist as an etching mask, the lower layer wiring material is etched halfway in the thickness direction by a dry etching method or a wet etching method, and then the first resist is peeled off, and the lower layer wiring material is further photolithographically processed. A pattern of a second resist having a pattern size larger than that of the first resist is formed on the pattern, and the lower layer wiring material is etched by the dry etching method or the wet etching method using the second resist as an etching mask. Forming an insulating film on this lower layer wiring And forming an upper layer wiring.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed into a film on a glass substrate, and a first resist pattern is formed on the lower layer wiring material by photolithography. After etching the lower layer wiring material by a dry etching method or a wet etching method using the first resist as an etching mask, the first resist is peeled off and the same material as the lower layer wiring material is formed on the lower layer wiring material pattern. A film of an insulating film material is formed, a pattern of a second resist having a pattern size larger than that of the first resist is formed on the insulating film material, and dry etching is performed using the second resist as an etching mask. Method or wet etching method is used to etch the insulating film material to form the lower layer wiring , And forming an insulating film and an upper wiring on the lower layer wiring.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed into a film on a glass substrate, and a first resist pattern is formed on the lower layer wiring material by photolithography. After etching the lower layer wiring material by a dry etching method or a wet etching method using the first resist as an etching mask, the first resist is peeled off and the same material as the lower layer wiring material is formed on the lower layer wiring material pattern. A film of an insulating film material is formed, a pattern of a second resist having a pattern size smaller than that of the first resist is formed on the same insulating film material, and dry etching is performed by using this second resist as an etching mask. Method or wet etching method is used to etch the insulating film material to form the lower layer wiring , And forming an insulating film and an upper wiring on the lower layer wiring.

Further, in another method for manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed into a film on a glass substrate, and a first resist pattern is formed on this lower layer wiring material by photolithography. After etching the lower layer wiring material by a dry etching method or a wet etching method using the first resist as an etching mask, the first resist is peeled off, and a material different from the lower layer wiring material is formed on the lower layer wiring material pattern. A film of an insulating film material is formed, and a first film is formed on the insulating film material.
Forming a second resist pattern having a pattern size larger than that of the above resist, and using the second resist as an etching mask to etch the insulating film material by a dry etching method or a wet etching method to form a lower layer wiring. It is characterized in that an insulating film and an upper layer wiring are formed on the lower layer wiring.

Further, in another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed into a film on a glass substrate, and a first resist pattern is formed on the lower layer wiring material by photolithography. After etching the lower layer wiring material by a dry etching method or a wet etching method using the first resist as an etching mask, the first resist is peeled off, and a material different from the lower layer wiring material is formed on the lower layer wiring material pattern. A film of an insulating film material is formed, a pattern of a second resist having a pattern size smaller than that of the first resist is formed on the insulating film material, and a dry etching method is performed using the second resist as an etching mask. The insulating film material is etched by the wet etching method to form the lower layer wiring. On the lower layer wiring and forming an insulating film and the upper wiring.

Further, in another method for manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed into a film on a glass substrate, and a first resist pattern is formed on the lower layer wiring material by photolithography. After the lower layer wiring material is etched by the dry etching method or the wet etching method using the first resist as an etching mask, an insulating film material which is the same material as the lower layer wiring material is formed on the lower layer wiring material pattern. The insulating film material on the resist is peeled off together with the first resist, and a pattern of the second resist having a pattern size larger than that of the first resist is formed on the lower layer wiring material and the insulating film material. By the dry etching method or the wet etching method using the second resist as an etching mask Forming a lower wiring by etching of the edge membrane material, and forming an insulating film and an upper wiring on the lower layer wiring.

Furthermore, in another method for manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed into a film on a glass substrate, and a first resist pattern is formed on this lower layer wiring material by photolithography. After etching the lower layer wiring material by a dry etching method or a wet etching method using the first resist as an etching mask, an insulating film material which is a material different from the lower layer wiring material is formed on the lower layer wiring material pattern. After that, the insulating film material on the resist is peeled off together with the first resist, and a pattern of the second resist having a pattern size larger than that of the first resist is formed on the lower layer wiring material and the insulating film material. This second resist is used as an etching mask by a dry etching method or a wet etching method. Te to form a lower layer wiring by etching of the insulating film material, and forming an insulating film and an upper wiring on the lower layer wiring.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A resist pattern is formed on the lower wiring material by photolithography, and the lower wiring material is etched halfway in the thickness direction by dry etching or wet etching using this resist as an etching mask, and then the resist is peeled off. The method is characterized in that the lower layer wiring is patterned at the same time when the insulating film is formed by the anodic oxidation method, and the upper layer wiring is formed thereon.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A resist pattern is formed on this lower layer wiring material by a photolithography method, the lower layer wiring material is etched by a dry etching method or a wet etching method using this resist as an etching mask, and then the resist is peeled off to form a resist pattern on this lower layer wiring material pattern. , Forming an insulating film material of the same material as the lower layer wiring material,
After the insulating film is formed by the anodic oxidation method, the upper wiring is formed on the insulating film.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A resist pattern is formed on this lower layer wiring material by a photolithography method, the lower layer wiring material is etched by a dry etching method or a wet etching method using this resist as an etching mask, and then the resist is peeled off to form a resist pattern on this lower layer wiring material pattern. The method is characterized in that an insulating film material different from the lower layer wiring material is formed into a film, an insulating film is further formed by an anodic oxidation method, and then an upper layer wiring is formed thereon.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A resist pattern is formed on this lower layer wiring material by a photolithography method, the lower layer wiring material is etched by a dry etching method or a wet etching method using this resist as an etching mask, and a lower layer wiring is formed on this lower layer wiring material pattern. After forming an insulating film material of the same material as the material, peeling off the insulating film material on the resist together with the resist, forming an insulating film by the anodic oxidation method, and then forming the upper layer wiring on this Is characterized by.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A resist pattern is formed on this lower layer wiring material by a photolithography method, the lower layer wiring material is etched by a dry etching method or a wet etching method using this resist as an etching mask, and different from the lower layer wiring material on this lower layer wiring material pattern. After the insulating film material of the material is formed, the insulating film material is peeled off together with the resist, the insulating film is formed by the anodic oxidation method, and then the upper wiring is formed thereon.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A resist pattern is formed on this lower layer wiring material by a photolithography method, and this resist is used as an etching mask to etch the lower layer wiring material halfway in the thickness direction by a dry etching method or a wet etching method, and then the resist is peeled off. Then, an insulating film and a non-anodized portion are formed by an anodic oxidation method, an upper layer wiring is formed on this, and the insulating film and the non-anodized portion are etched using this upper layer wiring pattern as an etching mask. It is characterized by doing.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer wiring material is etched halfway in the thickness direction by a dry etching method or a wet etching method using the resist as an etching mask. An insulating film and a non-anodized portion are formed by an oxidation method, an upper layer wiring pattern is formed thereon, and a resist pattern larger than the upper layer wiring pattern is formed on the upper layer wiring pattern. It is characterized in that the insulating film and the unanodized portion are etched as an etching mask.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer wiring material is etched halfway in the thickness direction by a dry etching method or a wet etching method using the resist as an etching mask. An insulating film and a non-anodized portion are formed by an oxidation method, an upper layer wiring is formed thereon, a protective film is further formed on the upper layer wiring pattern, and the insulating film is used as an etching mask. And etching the non-anodized portion.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A first resist pattern is formed on this lower layer wiring material by a photolithography method, and the lower layer wiring material is etched halfway in the thickness direction by a dry etching method or a wet etching method using this first resist as an etching mask. Peel off the first resist,
An insulating film and an unanodized portion are formed by an anodizing method,
Further, a second resist pattern having a pattern size larger than that of the first resist is formed on the lower layer wiring material pattern, and the insulating film is not formed on the insulating film by a dry etching method or a wet etching method using the second resist as an etching mask. It is characterized in that the anodized portion is etched to form an upper layer wiring thereon.

Further, in another method for manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A first resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer wiring material is etched by the dry etching method or the wet etching method using the first resist as an etching mask to peel off the first resist. After that, an insulating film material of the same material as the lower layer wiring material is formed on the lower layer wiring material pattern, and an insulating film and a non-anodized portion are further formed by an anodic oxidation method. The second pattern having a larger pattern size than the first resist on the material pattern
Is formed, and the insulating film and the non-anodized portion are etched by the dry etching method or the wet etching method using the second resist as an etching mask, and the upper wiring is formed thereon. And

Furthermore, another method of manufacturing a liquid crystal display device of the present invention is to form a lower layer wiring material on a glass substrate,
A first resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer wiring material is etched by the dry etching method or the wet etching method using the first resist as an etching mask to peel off the first resist. After that, an insulating film material of a material different from that of the lower layer wiring material is formed on the lower layer wiring material pattern, and an insulating film is further formed by an anodic oxidation method. A second resist pattern having a pattern size larger than that of the first resist is formed, and the insulating film is further etched by the dry etching method or the wet etching method using the second resist as an etching mask, and the upper layer wiring is formed thereon. Is formed.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A first resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer wiring material is etched by a dry etching method or a wet etching method using the first resist as an etching mask. After forming an insulating film material of the same material as the lower layer wiring material on the upper side, the insulating film material on the resist is peeled off together with the first resist, and further, the insulating film and the unanodized portion are formed by the anodic oxidation method. Then, a second resist pattern having a pattern size larger than that of the first resist is formed on the lower layer wiring material pattern, and the second resist pattern is used as an etching mask to perform dry etching or wet etching. By etching the insulating film and unanodized part by And forming an upper wiring on the.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A first resist pattern is formed on the lower layer wiring material by a photolithography method, the lower layer wiring material is etched by the dry etching method or the wet etching method using the first resist as an etching mask, and the first resist pattern is formed on the lower layer wiring material pattern. After forming an insulating film material of a material different from the lower layer wiring material, peeling off the insulating film material on the resist together with the resist, and further forming an insulating film by the anodic oxidation method, further lower layer wiring A second resist pattern having a pattern size larger than that of the first resist is formed on the material pattern, and the insulating film is etched by the dry etching method or the wet etching method using the second resist as an etching mask. Characterized by forming an upper layer wiring on this

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A resist pattern is formed on this lower layer wiring material by a photolithography method, the lower layer wiring material is etched by a dry etching method or a wet etching method using this resist pattern as an etching mask, and after this resist is peeled off, this lower layer wiring On the material pattern, an insulating film material of the same material as the lower layer wiring material is formed into a film, and further, after forming an insulating film and a non-anodized portion by an anodic oxidation method, further on this lower layer wiring material pattern, It is characterized in that an upper layer wiring pattern is formed, and the insulating film and the non-anodized portion are etched using the upper layer wiring pattern as an etching mask.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A resist pattern is formed on this lower layer wiring material by a photolithography method, the lower layer wiring material is etched by a dry etching method or a wet etching method using this resist pattern as an etching mask, and after this resist is peeled off, this lower layer wiring On the material pattern, an insulating film material of the same material as the lower layer wiring material is formed into a film, and further, after forming an insulating film and a non-anodized portion by an anodic oxidation method, further on this lower layer wiring material pattern, An upper layer wiring pattern is formed, and a resist pattern larger than the upper layer wiring pattern is formed on the upper layer wiring pattern. The insulating film and the unanodized portion are used as etching masks to form an insulating film. And an unanodized portion are etched. .

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A resist pattern is formed on this lower layer wiring material by a photolithography method, the lower layer wiring material is etched by a dry etching method or a wet etching method using this resist pattern as an etching mask, and after this resist is peeled off, this lower layer wiring After forming an insulating film material of the same material as the lower layer wiring material on the material pattern and further forming an insulating film and a non-anodized portion by an anodic oxidation method, an upper layer is further formed on this lower layer wiring material pattern. A wiring pattern is formed, a protective film is further formed on the upper wiring pattern, and the insulating film and the non-anodized portion are used as an etching mask by using the protective film pattern as an etching mask. It is characterized in that the oxidized portion is etched.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A resist pattern is formed on this lower layer wiring material by a photolithography method, the lower layer wiring material is etched by a dry etching method or a wet etching method using this resist pattern as an etching mask, and after this resist is peeled off, this lower layer wiring On the material pattern, an insulating film material of a material different from the lower layer wiring material is formed into a film, and further, after forming an insulating film and an unanodized portion by an anodic oxidation method, further on this lower layer wiring material pattern, It is characterized in that an upper layer wiring pattern is formed, and the insulating film and the non-anodized portion are etched using the upper layer wiring pattern as an etching mask.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A resist pattern is formed on this lower layer wiring material by a photolithography method, the lower layer wiring material is etched by a dry etching method or a wet etching method using this resist pattern as an etching mask, and after this resist is peeled off, this lower layer wiring On the material pattern, an insulating film material of a material different from the lower layer wiring material is formed into a film, and further, after forming an insulating film and an unanodized portion by an anodic oxidation method, further on this lower layer wiring material pattern, An upper layer wiring pattern is formed, and a resist pattern larger than the upper layer wiring pattern is formed on the upper layer wiring pattern. The insulating film and the unanodized portion are used as etching masks to form an insulating film. And etching the unanodized part That.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A resist pattern is formed on this lower layer wiring material by a photolithography method, the lower layer wiring material is etched by a dry etching method or a wet etching method using this resist pattern as an etching mask, and after this resist is peeled off, this lower layer wiring On the material pattern, an insulating film material of a material different from the lower layer wiring material is formed into a film, and further, after forming an insulating film and an unanodized portion by an anodic oxidation method, further on this lower layer wiring material pattern, An upper layer wiring pattern is formed, a protective film is further formed on the upper layer wiring pattern, and the insulating film and the unanodized portion are used as an etching mask with the protective film pattern as an etching mask. And are etched.

Further, in another method for manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A resist pattern is formed on this lower layer wiring material by a photolithography method, the lower layer wiring material is etched by a dry etching method or a wet etching method using this resist pattern as an etching mask, and a lower layer wiring is formed on this lower layer wiring material pattern. After forming an insulating film material of the same material as the material, the insulating film material on the resist is peeled off together with the resist, and the insulating film and the non-anodized portion are formed by the anodic oxidation method, and then this lower layer wiring An upper layer wiring pattern is formed on the material pattern, and the insulating film and the unanodized portion are etched using the upper layer wiring pattern as an etching mask.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A resist pattern is formed on this lower layer wiring material by a photolithography method, the lower layer wiring material is etched by a dry etching method or a wet etching method using this resist pattern as an etching mask, and a lower layer wiring is formed on this lower layer wiring material pattern. After forming an insulating film material of the same material as the material, the insulating film material on the resist is peeled off together with the resist, and the insulating film and the non-anodized portion are formed by the anodic oxidation method, and then this lower layer wiring An upper layer wiring pattern is formed on the material pattern, and a resist pattern larger than the upper layer wiring pattern is formed on this upper layer wiring pattern, and the insulating film and the unanodized portion are etched using this resist pattern as an etching mask. Using the insulating film and the unanodized part as a mask Characterized by etching.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A resist pattern is formed on this lower layer wiring material by a photolithography method, the lower layer wiring material is etched by a dry etching method or a wet etching method using this resist pattern as an etching mask, and a lower layer wiring is formed on this lower layer wiring material pattern. After forming an insulating film material of the same material as the material, peeling off the insulating film material on the resist together with the resist, further, after forming an insulating film and an unanodized portion by an anodic oxidation method,
Further, an upper layer wiring pattern is formed on the lower layer wiring material pattern, a protective film is further formed on the upper layer wiring pattern, and the insulating film and the unanodized portion are formed using the protective film pattern as an etching mask. Is used as an etching mask to etch the insulating film and the non-anodized portion.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A resist pattern is formed on this lower layer wiring material by a photolithography method, the lower layer wiring material is etched by a dry etching method or a wet etching method using this resist pattern as an etching mask, and a lower layer wiring is formed on this lower layer wiring material pattern. After forming an insulating film material of a material different from the material, the insulating film material on the resist is peeled off together with the resist, and the insulating film and the non-anodized portion are further formed by the anodic oxidation method. An upper layer wiring pattern is formed on the lower layer wiring material pattern, and the insulating film and the unanodized portion are etched using the upper layer wiring pattern as an etching mask.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A resist pattern is formed on this lower layer wiring material by a photolithography method, the lower layer wiring material is etched by a dry etching method or a wet etching method using this resist pattern as an etching mask, and a lower layer wiring is formed on this lower layer wiring material pattern. After forming an insulating film material of a material different from the material, the insulating film material on the resist is peeled off together with the resist, and the insulating film and the non-anodized portion are further formed by the anodic oxidation method. An upper layer wiring pattern is formed on the lower layer wiring material pattern, and a resist pattern larger than the upper layer wiring pattern is further formed on this upper layer wiring pattern. Using this resist pattern as an etching mask, an insulating film and a non-anodic layer are formed. Insulating film and non-anode using the oxidized part as an etching mask Characterized by etching the unit.

Further, according to another method of manufacturing a liquid crystal display device of the present invention, a lower layer wiring material is formed on a glass substrate,
A resist pattern is formed on this lower layer wiring material by a photolithography method, the lower layer wiring material is etched by a dry etching method or a wet etching method using this resist pattern as an etching mask, and a lower layer is formed on this lower layer wiring material pattern. After forming an insulating film material of a material different from the wiring material, the insulating film material on the resist is peeled off together with the resist, and further,
After forming an insulating film and a non-anodized portion by an anodic oxidation method, an upper layer wiring pattern is further formed on this lower layer wiring material pattern, and a protective film is further formed on this upper layer wiring pattern to protect this layer. The insulating film and the non-anodized portion are etched using the insulating film and the non-anodized portion as an etching mask using the film pattern as an etching mask.

[0054]

In the structure of the liquid crystal display device of the present invention and the method of manufacturing the same, the base for forming the upper layer wiring is an insulating film formed by the anodic oxidation method in the vicinity of the active element region. .

As a result, it is possible to reduce the step size in which the upper layer wirings are overlapped at one time. Therefore, as compared with the prior art, it is possible to reduce the disorder of the crystallinity of the upper layer wiring material in the overlapping region.

Further, since the film forming the upper layer wiring has the same base in both the active element portion and the element peripheral portion, there is no difference in film quality in the vicinity of the active element. Furthermore, the insulating film formed by the anodic oxidation method is denser and does not generate pinholes than the insulating film formed by the sputtering method or the chemical vapor deposition method. There is an advantage that short-circuit defects that result in connection do not occur.

As a result, the upper layer wirings are likely to overlap with each other, and there is no difference in film quality in the vicinity of the active element, so that pixel defects due to disconnection at the step portion can be reduced.

[0058]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of a switching element of a liquid crystal display device according to an embodiment of the present invention and its manufacturing method will be described below with reference to the drawings. First, the structure of a switching element used in a liquid crystal display device according to an embodiment of the present invention is shown in FIG.
And the cross-sectional view of FIG.

As shown in FIG. 7, a thin film diode (TFD) in which an insulating film 3 is formed on the lower wiring 2 having a step in the sectional structure by an anodic oxidation method, and an upper wiring 4 is formed on the insulating film 3. As an element.

As shown in FIGS. 1 and 7, the cross-sectional shape of the lower layer wiring 2 and the lower layer wiring 2 and the insulating film 3 has a stepped structure so that the overlap at the stepped portion is facilitated. Has become.

By providing this step, the overlap of the upper layer wiring 4 is divided into two, the load due to one overlap is reduced, and the disconnection at the step can be reduced.

Although FIG. 1 shows an example in which the step difference in the cross-sectional shape of the lower layer wiring 2 is two steps, as shown in FIG. Good.

The TFD is formed by using the lower wiring 2 shown in FIG.
When the element is formed, the structure shown in FIG. 10 is obtained.

Furthermore, as shown in FIG. 5, the cross-sectional shape of the lower layer wiring 2 may be tapered.

When the TFD is formed using the lower layer wiring 2 shown in FIG. 5, the structure shown in the sectional view of FIG. 11 is obtained.

Further, as shown in FIG. 6, the cross-sectional shape of the lower layer wiring 2 is such that a region near the glass substrate 1 has a very small taper angle, and the region of the upper surface of the tapered region near the glass substrate 1 is The shape may have a taper angle larger than this taper angle.

By adopting the sectional shape of the lower layer wiring 2 as shown in FIG. 6, the lower layer wiring 2 is formed, and further the insulating film 3 and the upper layer wiring 4 are formed, and the TFD as shown in FIG. 12 is formed. When the element is formed, the upper layer wiring 4 can substantially preserve the taper angle of the lower layer wiring 2 without deteriorating the pattern accuracy.

Next, a manufacturing method for forming the structure of the switching element of the liquid crystal display device described above will be described. In the following description of the embodiments, tantalum is used for the lower wiring 2 and indium tin oxide (ITO) is used for the upper wiring 4.
Will be described as an example.

First, as shown in FIG. 13, tantalum having a film thickness of 50 nm to 500 nm is formed on the glass substrate 1 as a material of the lower layer wiring 2 by a sputtering method. Next, the same pattern of the resist 6 as the pattern of the lower layer wiring 2 is formed on the tantalum which is the material of the lower layer wiring 2 by the photolithography method.

To form the tantalum film, argon gas having a flow rate of 100 sccm was introduced into the sputtering apparatus,
The total pressure is 5mTorr, and 1KW to 3K
Radio frequency (RF) power of W (13.56 as the transmission frequency
MHz) to generate tantalum, which is a target material, is sputtered, and the tantalum thus ejected is deposited on the glass substrate 1.

Then, as shown in FIG. 14, dry etching or wet etching of tantalum, which is the material of the lower layer wiring 2, is performed using the patterned resist 6 as an etching mask.

For dry etching of tantalum, sulfur hexafluoride (SF6) was introduced into the dry etching apparatus at a flow rate of 100 sccm to 500 sccm, and 0 sc
cm to 100 sccm of oxygen is added, the total pressure is set to 50 mTorr to 200 mToor, and the oscillation frequency is 13.56 M at 100 W to 1000 W.
It is performed by plasma generated by applying radio frequency (RF) power of Hz.

When the tantalum etching treatment is performed by wet etching, a mixed solution is used so that the ratio of nitric acid, ammonium fluoride, hydrofluoric acid and water is 5: 2: 1: 3. To do.

Next, as shown in FIG. 15, the resist 6 on the lower layer wiring 2 is subjected to an ashing process to reduce the pattern size of the resist 6.

In this ashing process, oxygen at a flow rate of 100 sccm to 1000 sccm is introduced into the dry etching apparatus, and further 0 sccm to 100 sccm is introduced into the oxygen.
Sulfur hexafluoride is added and the total pressure is 100 mTorr
~ 300mTorr, 100W ~ 500W for this
The plasma is generated by applying high frequency power of 13.56 MHz as the oscillation frequency.

At this time, the etching of the lower layer wiring 2 material is also slightly advanced depending on the amount of sulfur hexafluoride introduced, and the area where the lower layer wiring 2 material is exposed, which is the area not covered with the resist 6 by the ashing process, is tapered. You can also do it.

Next, as shown in FIG. 16, a resist 6 having a reduced pattern size is used as an etching mask to perform a dry etching process or a wet etching process of tantalum, which is the material of the lower layer wiring 2, and in the middle of the thickness direction. Etching up to.

After that, the resist 6 on the lower layer wiring 2 is peeled off, whereby the lower layer wiring 2 having a shape having a two-step difference as shown in FIG. 1 can be formed.

Next, as shown in FIG. 7, an insulating film 3 is formed on the lower layer wiring 2 pattern by the anodic oxidation method, and the upper layer wiring 4 pattern is formed on the insulating film 3 to form the TFD having the structure shown in FIG. An element can be obtained.

In this anodic oxidation treatment, a 0.01-1% citric acid solution was used, and a platinum electrode was used as the cathode to form the lower wiring 2.
A voltage of 10V to 100V is applied between the material and tantalum.

As still another manufacturing method, the lower layer wiring 2 having an etching cross-sectional shape having three steps as shown in FIG. 4 can be formed by performing the ashing step and the etching step again.

Furthermore, by controlling the etching rate ratio between the resist 6 and the tantalum of the lower layer wiring 2 during the etching process and the ashing process,
It is possible to form the lower layer wiring 2 having the etching sectional shape having the tapered shape shown in FIGS. 5 and 6.

Next, a manufacturing method of an embodiment different from the above-described manufacturing method of the thin film diode will be described.

First, as shown in FIG. 13, on the glass substrate 1, as the material of the lower layer wiring 2, by the sputtering method,
A film of tantalum having a film thickness of 50 nm to 500 nm is formed.
Next, the same pattern of the resist 6 as the pattern of the lower layer wiring 2 is formed on the tantalum which is the material of the lower layer wiring 2 by the photolithography method.

Next, as shown in FIG. 14, dry etching or wet etching of tantalum, which is the material of the lower layer wiring 2, is performed using the patterned resist 6 as an etching mask.

The dry etching process and the wet etching process of tantalum, which is the material of the lower layer wiring 2, are performed by the same processing method as described above.

Next, as shown in FIG. 15, the resist 6 on the lower layer wiring 2 is peeled off, and a resist 6 having a pattern size smaller than that of the lower layer wiring 2 is formed again on the lower layer wiring 2 by the photolithography method.

Next, as shown in FIG. 16, using the resist 6 having a reduced pattern size as an etching mask, dry etching or wet etching of tantalum, which is the material of the lower layer wiring 2, is performed to remove tantalum in the thickness direction. Etching proceeds halfway.

After that, the resist 6 on the lower layer wiring 2 is peeled off so that the lower layer wiring 2 having the shape as shown in FIG.
Can be formed.

Further, an insulating film 3 is formed on the lower layer wiring 2 pattern by the anodic oxidation method, and the upper layer wiring 4 pattern is formed on the insulating film 3 to form a T film having the structure shown in FIG.
An FD element can be obtained.

Next, a manufacturing method of an embodiment different from the above-described manufacturing method of the thin film diode will be described.

First, as shown in FIG. 13, as a material for the lower layer wiring 2, a glass substrate 1 is formed by a sputtering method.
A film of tantalum having a film thickness of 50 nm to 500 nm is formed.
Next, the same pattern of the resist 6 as the pattern of the lower layer wiring 2 is formed on the tantalum which is the material of the lower layer wiring 2 by the photolithography method.

Next, as shown in FIG. 17, using this patterned resist 6 as an etching mask, dry etching or wet etching of tantalum, which is the material of the lower layer wiring 2, is performed to obtain the material of the lower layer wiring 2. Etching proceeds partway in the thickness direction of tantalum.

The dry etching process and the wet etching process of tantalum, which is the material of the lower layer wiring 2, are performed by the same processing method as described above.

Then, as shown in FIG. 18, the resist 6 on the lower wiring 2 is subjected to an ashing process to reduce the pattern size of the resist 6.

The ashing process for reducing the pattern size of the resist 6 is performed by the same processing method as the above processing conditions.

Next, as shown in FIG. 16, using the resist 6 having a reduced pattern size as an etching mask, dry etching or wet etching of tantalum, which is the material of the lower layer wiring 2, is performed until halfway in the thickness direction of tantalum. Proceed with etching.

Thereafter, the resist 6 on the lower layer wiring 2 is peeled off to form the lower layer wiring 2 having a shape having a two-step difference as shown in FIG.

Further, the TFD element having the structure shown in FIG. 7 can be obtained by forming the insulating film 3 on the lower layer wiring 2 pattern by the anodic oxidation method and forming the upper layer wiring 4 pattern thereon.

As another manufacturing method, the lower wiring 2 having an etching cross-sectional shape having three steps as shown in FIG. 4 can be formed by performing the ashing step and the etching step again.

Furthermore, by controlling the etching rate ratio between the resist 6 and the tantalum of the lower layer wiring 2 during the etching process and the ashing process,
The lower layer wiring 2 having the etching cross-sectional shape having the tapered shape shown in FIGS. 5 and 6 can be formed.

Next, a manufacturing method of an embodiment different from the above-described manufacturing method of the thin film diode will be described.

First, as shown in FIG. 13, as the material of the lower layer wiring 2, 5 is formed on the glass substrate 1 by the sputtering method.
A film of tantalum having a film thickness of 0 nm to 500 nm is formed, and then the same pattern of the resist 6 as the pattern of the lower layer wiring 2 is formed on the tantalum which is the material of the lower layer wiring 2 by the photolithography method.

Next, as shown in FIG. 17, using this patterned resist 6 as an etching mask,
Tantalum, which is the material of the lower layer wiring 2, is subjected to dry etching treatment or wet etching treatment, and etching is advanced to the middle of the thickness of tantalum, which is the material of the lower layer wiring 2, in the thickness direction.

The dry etching process and the wet etching process of tantalum, which is the material of the lower layer wiring 2, are performed by the same processing method as described above.

Next, as shown in FIG. 18, the resist 6 on the lower layer wiring 2 is peeled off, and a resist 6 having a smaller pattern size than the lower layer wiring 2 is formed again on the lower layer wiring 2 by the photolithography method.

Next, as shown in FIG. 16, using the resist 6 having a reduced pattern size as an etching mask, dry etching or wet etching of tantalum, which is the material of the lower layer wiring 2, is performed to obtain the thickness of the material of the lower layer wiring 2. Etching proceeds halfway in the vertical direction.

After that, the resist 6 on the lower layer wiring 2 is peeled off, whereby the lower layer wiring 2 having a cross-sectional shape having a step of two steps as shown in FIG. 1 can be formed.

Further, the TFD element having the structure shown in FIG. 7 can be obtained by forming the insulating film 3 on the lower layer wiring 2 pattern by the anodic oxidation method and forming the upper layer wiring 4 pattern thereon.

Next, a manufacturing method of an embodiment different from the above-described manufacturing method of the thin film diode will be described.

First, as shown in FIG. 19, as a material for the lower layer wiring 2 on the glass substrate 1 by the sputtering method,
A film of tantalum having a film thickness of 50 nm to 500 nm is formed.
Then, the same pattern of the resist 6 as the pattern of the lower layer wiring 2 is formed on the tantalum which is the material of the lower layer wiring 2 by the photolithography method.

Next, as shown in FIG. 20, dry etching or wet etching of tantalum, which is the material of the lower layer wiring 2, is performed by using the patterned resist 6 as an etching mask, and the thickness of tantalum, which is the material of the lower layer wiring 2, is increased. Etching proceeds halfway in the vertical direction.

The dry etching process and the wet etching process of tantalum, which is the material of the lower layer wiring 2, are performed by the same processing method as described above.

Next, as shown in FIG. 21, the resist 6 on the lower layer wiring 2 used as the etching mask is removed.

Further, as shown in FIG. 22, the lower layer wiring 2
A resist 6 having a larger pattern size than the lower wiring 2
Are formed again by the photolithography method.

Next, as shown in FIG. 23, using the resist 6 having a large pattern size as an etching mask, dry etching or wet etching of tantalum, which is the material of the lower layer wiring 2, is performed.

Further, by peeling off the resist 6 on the lower layer wiring 2, the lower layer wiring 2 having a cross-sectional shape having a two-step difference can be formed as shown in FIG.

Further, the TFD element having the structure shown in FIG. 7 can be obtained by forming the insulating film 3 on the lower layer wiring 2 pattern by the anodic oxidation method and forming the upper layer wiring 4 pattern thereon.

Next, a manufacturing method of an embodiment different from the above-described manufacturing method of the thin film diode will be described.

First, as shown in FIG. 24, as a material for the lower layer wiring 2, a glass substrate 1 is formed by a sputtering method.
A film of tantalum having a film thickness of 50 nm to 500 nm is formed.
Then, the same pattern of the resist 6 as the pattern of the lower layer wiring 2 is formed on the tantalum which is the material of the lower layer wiring 2 by the photolithography method.

Then, as shown in FIG. 25, using the patterned resist 6 as an etching mask, dry etching or wet etching of tantalum, which is the material of the lower layer wiring 2, is performed.

The dry etching process and the wet etching process of tantalum which is the material of the lower layer wiring 2 are performed by the same processing method as described above.

Next, as shown in FIG. 26, the resist 6 on the lower layer wiring 2 is peeled off, and tantalum, which is the same material as the lower layer wiring 2 material, is formed as the insulating film material 7 by the sputtering method.

Next, as shown in FIG. 27, a resist 6 having a pattern size larger than that of the lower layer wiring 2 pattern is formed again on the insulating film material 7 by the photolithography method.

Then, as shown in FIG. 28, dry etching or wet etching of tantalum, which is the insulating film material 7, is performed using the re-formed resist 6 as an etching mask.

After that, the resist 6 is peeled off, and the insulating film 3 is formed on the lower layer wiring 2 pattern by the anodic oxidation method, and the upper layer wiring 4 pattern is formed on the insulating film 3 to form the structure shown in FIG. Can be obtained.

Next, a manufacturing method of an embodiment different from the above-described manufacturing method of the thin film diode will be described.

First, as shown in FIG. 29, on the glass substrate 1, as the material of the lower layer wiring 2, by the sputtering method,
A film of tantalum having a film thickness of 50 nm to 500 nm is formed.
Then, the same pattern of the resist 6 as the pattern of the lower layer wiring 2 is formed on the tantalum which is the material of the lower layer wiring 2 by the photolithography method.

Next, as shown in FIG. 30, using this patterned resist 6 as an etching mask,
Tantalum, which is the material of the lower layer wiring 2, is subjected to dry etching processing or wet etching processing.

The dry etching process and the wet etching process of tantalum, which is the material of the lower layer wiring 2, are performed by the same processing method as described above.

Next, as shown in FIG. 31, the resist 6 on the lower layer wiring 2 is peeled off, and tantalum, which is the same material as the lower layer wiring 2 material, is formed as the insulating film 3 material by the sputtering method.

Next, as shown in FIG. 32, a resist 6 having a pattern size larger than that of the lower layer wiring 2 pattern is formed again on the insulating film 3 material by the photolithography method.

Next, as shown in FIG. 33, using the resist 6 having a reduced pattern size as an etching mask, dry etching or wet etching of tantalum, which is the material of the lower layer wiring 2, is performed, and the thickness direction of tantalum is changed. Etching proceeds halfway.

After that, the resist 6 is peeled off, the insulating film 3 is formed on the lower layer wiring 2 pattern by the anodic oxidation method, and the upper layer wiring 4 pattern is formed on the insulating film 3 to form the structure shown in FIG. A TFD element can be obtained.

Next, a manufacturing method of an embodiment different from the above-described manufacturing method of the thin film diode will be described.

First, as shown in FIG. 19, on the glass substrate 1, as the material of the lower layer wiring 2, by the sputtering method,
A film of tantalum having a film thickness of 50 nm to 500 nm is formed.
Then, the same pattern of the resist 6 as the pattern of the lower layer wiring 2 is formed on the tantalum which is the material of the lower layer wiring 2 by the photolithography method.

Next, as shown in FIG. 34, using the patterned resist 6 as an etching mask, dry etching or wet etching of tantalum, which is the material of the lower layer wiring 2, is performed.

The dry etching process and the wet etching process of tantalum which is the material of the lower layer wiring 2 are performed by the same processing method as described above.

Next, as shown in FIG. 35, tantalum, which is the same material as the lower wiring 2, is formed as the insulating film material 7 by the sputtering method.

Next, as shown in FIG. 36, the resist 6
At the same time, the insulating film material 7 on the resist 6 pattern is peeled off.

Next, as shown in FIG. 37, a resist 6 having a pattern size larger than that of the lower layer wiring 2 pattern is formed again on the insulating film material 7 by the photolithography method.

Next, as shown in FIG. 38, using the re-formed resist 6 as an etching mask, dry etching or wet etching of tantalum, which is the material of the lower layer wiring 2, is performed.

After that, the resist 6 is peeled off, the insulating film 3 is formed on the lower layer wiring 2 pattern by the anodic oxidation method, and the upper layer wiring 4 pattern is formed on the insulating film 3 to form the structure shown in FIG. Can be obtained.

Next, a manufacturing method of an embodiment different from the above-described manufacturing method of the thin film diode will be described.

First, as shown in FIG. 19, the glass substrate 1
A film of tantalum having a film thickness of 50 nm to 500 nm is formed as a material of the lower layer wiring 2 on the upper side by a sputtering method.

Next, the same pattern of the resist 6 as the pattern of the lower layer wiring 2 is formed on the tantalum which is the material of the lower layer wiring 2 by the photolithography method.

Next, as shown in FIG. 20, using this patterned resist 6 as an etching mask,
A dry etching process or a wet etching process is performed on tantalum, which is the material of the lower layer wiring 2, and etching is performed halfway in the thickness direction of tantalum, which is the material of the lower layer wiring 2.

At this time, the thickness of tantalum to be etched is set such that the film thickness of the material of the lower layer wiring 2 remaining on the glass substrate 1 is one half or less of the anodized film thickness. For example,
When the anodic oxide film thickness is desired to be 200 nm, etching is performed so that the film thickness of the material of the lower layer wiring 2 remaining on the glass substrate 1 is 100 nm or less.

The dry etching process and the wet etching process of tantalum, which is the material of the lower layer wiring 2, are performed by the same processing method as described above.

Next, as shown in FIG. 21, the resist 6 on the lower layer wiring 2 used as the etching mask is removed.

Next, as shown in FIG. 39, the insulating film 3 is formed on the lower layer wiring 2 by the anodic oxidation method, and at the same time, the lower layer wiring 2 is patterned.

Further, as shown in FIG. 40, on the insulating film 3, indium tin oxide (IT
O) is formed into a film by the spattering method.

The ITO film was formed by using a sputtering apparatus in which argon gas with a flow rate of 100 sccm and 2 sccm were used.
Of oxygen, and the total pressure is 10mTorr,
A high frequency (RF) power of 1 kW to 3 kW (13.56 MHz as an oscillating frequency) is applied to this to generate ITO, which causes sputtering to ITO as a target material, and the repelled ITO is deposited on the insulating film 3. By doing.

Next, as shown in FIG. 40, the same resist 6 pattern as that of the upper layer wiring 4 is formed on the ITO which is the material of the upper layer wiring 4 by photolithography, and the resist 6 pattern is used as an etching mask to dry the same. Etching is performed by the etching method or the wet etching method.

When the ITO etching process is performed by the dry etching method, 100
Methane (CH4) was introduced at a flow rate of sccm to 500 sccm, and 0 sccm to 100 sccm of hydrogen was added thereto.
0 sccm to 100 sccm of methanol (CH3O
H) and the total pressure of 30 mTorr to 200
As mToor, 13.56 at 1KW to 3KW
MHz is also performed by plasma generated by applying high frequency power.

Furthermore, when the etching treatment of ITO is carried out by wet etching, it is carried out by using a mixed solution of iron chloride, hydrochloric acid and water in a ratio of 3: 5: 2.

After that, the resist used as the etching mask is peeled off to obtain the TFD element having the structure shown in FIG.

Further, as shown in FIG. 43, when the tantalum, which is the material of the lower layer wiring 2, is etched, the flow rate of oxygen is controlled to control the resist 6 and the lower layer wiring 2.
The etching cross-section may be tapered by controlling the etching rate ratio of the material tantalum.
The TFD element formed by this method is as shown in FIG. 44, and has a structure in which the upper layer wiring 4 is more likely to overlap.

Next, a manufacturing method of an embodiment different from the manufacturing method of the thin film diode described above will be described.

First, as shown in FIG. 24, the glass substrate 1
A film of tantalum having a film thickness of 50 nm to 500 nm is formed as a material of the lower layer wiring 2 on the upper side by a sputtering method.

Next, the same pattern of the resist 6 as the lower layer wiring 2 pattern is formed on the tantalum which is the lower layer wiring 2 material by the photolithography method.

Next, as shown in FIG. 25, using the patterned resist 6 as an etching mask,
Tantalum, which is the material of the lower layer wiring 2, is subjected to dry etching processing or wet etching processing.

The dry etching process and the wet etching process of tantalum, which is the material of the lower layer wiring 2, are performed by the same processing method as described above.

Next, as shown in FIG. 26, the resist 6 on the lower layer wiring 2 is peeled off, and tantalum, which is an insulating film material 7 of the same material as the lower layer wiring 2 material, is sputtered on the lower layer wiring 2 pattern. The film is formed again.

At this time, the thickness of the tantalum film to be formed is
The thickness should be half or less of the anodized film thickness.

Next, as shown in FIG. 39, the insulating film 3 is formed on the lower wiring 2 by the anodic oxidation method.

Furthermore, as shown in FIG. 40, on the insulating film 3, indium tin oxide (I
TO) is formed into a film by the spattering method.

Next, as shown in FIG. 41, the same resist 6 pattern as that of the upper layer wiring 4 is formed on the ITO which is the material of the upper layer wiring 4 by the photolithography method, and the wet etching method is performed by using the resist 6 pattern as an etching mask. By forming the upper layer wiring 4 pattern by using, the TFD element having the structure shown in FIG. 42 can be obtained.

Further, as shown in FIG. 3, when etching the tantalum which is the material of the lower layer wiring 2, by controlling the flow rate of oxygen, the ratio of the etching rate of the resist 6 to the etching rate of tantalum which is the material of the lower layer wiring 2 is adjusted. By controlling, the etching cross section may be tapered. The active element formed by this method is as shown in FIG. 44, and has a structure in which the upper layer wiring 4 is more likely to overlap.

Next, a manufacturing method of an embodiment different from the above-described manufacturing method of the thin film diode will be described.

First, as shown in FIG. 24, the glass substrate 1
A film of tantalum having a film thickness of 50 nm to 500 nm is formed as a material of the lower layer wiring 2 on the upper side by a sputtering method. After that, on the tantalum which is the material of the lower layer wiring 2,
The same pattern of the resist 6 as the lower layer wiring 2 pattern is formed by photolithography.

Next, as shown in FIG. 34, dry etching of tantalum, which is the material of the lower layer wiring 2, is performed using the patterned resist 6 as an etching mask.

The dry etching process and the wet etching process of tantalum, which is the material of the lower layer wiring 2, are performed by the same processing method as described above.

Next, as shown in FIG. 35, tantalum, which is the material of the insulating film 3 of the same material as the lower layer wiring 2, is formed again on the lower layer wiring 2 pattern by the sputtering method.

At this time, the thickness of the tantalum film to be formed is
The thickness should be half or less of the anodized film thickness.

Next, as shown in FIG. 36, the resist 6 on the lower wiring 2 pattern is peeled off together with tantalum which is the insulating film material 7 on the resist 6 pattern.

Next, as shown in FIG. 39, the insulating film 3 is formed on the lower wiring 2 by the anodic oxidation method.

Further, as shown in FIG. 40, on the insulating film 3, indium tin oxide (I
TO) is formed into a film by the spattering method.

Next, as shown in FIG. 41, the same resist 6 pattern as the upper layer wiring 4 is formed on the ITO which is the material of the upper layer wiring 4 by the photolithography method, and the resist 6 pattern is used as an etching mask.
By forming the upper layer wiring 4 pattern by the wet etching method, the TFD element having the structure shown in FIG. 42 can be obtained.

As shown in FIG. 3, when etching tantalum, which is the material for the lower layer wiring 2, by controlling the flow rate of oxygen, the etching rate ratio between the resist 6 and tantalum, which is the material for the lower layer wiring 2, is adjusted. By controlling, the etching cross section may be tapered. The TFD element formed by this method is as shown in FIG. 44, and has a structure in which the upper layer wiring 4 is more likely to overlap.

Next, a manufacturing method of an embodiment different from the above-described manufacturing method of the thin film diode will be described.

First, as shown in FIG. 19, the glass substrate 1
A film of tantalum having a film thickness of 50 nm to 500 nm is formed as a material of the lower layer wiring 2 on the upper side by a sputtering method. Then, the same pattern of the resist 6 as the pattern of the lower layer wiring 2 is formed on the tantalum which is the material of the lower layer wiring 2 by the photolithography method.

Next, as shown in FIG. 45, using the patterned resist 6 as an etching mask, dry etching or wet etching of tantalum, which is the material of the lower layer wiring 2, is performed to obtain the material of the lower layer wiring 2. Etching proceeds partway in the thickness direction of tantalum.

At this time, the thickness of the tantalum to be etched is set so that the film thickness of the material of the lower layer wiring 2 remaining on the glass substrate 1 is one half or less of the anodic oxide film thickness.

Here, in the case of etching tantalum by dry etching, by increasing the flow rate of sulfur hexafluoride in the etching conditions, the fluorine radicals are likely to stagnate in the vicinity of the resist 6 pattern, and partially. Increasing the concentration increases the etching rate.

As a result, the etched cross-sectional shape becomes such that the lower layer wiring 2 of the pattern edge portion of the resist 6 is etched, as shown in FIG.

When the tantalum etching process is performed by wet etching, a mixed solution of nitric acid, ammonium fluoride, hydrofluoric acid and water having a ratio of 7: 2: 1: 3 is used. The glass substrate 1 is immersed in the solution.

When the glass substrate 1 is pulled out of the solution and transferred to the water washing tank, if a waiting time is provided, the etching solution is likely to accumulate in the vicinity of the resist 6 pattern. Figure 45
As shown in FIG. 5, the lower layer wiring 2 of the pattern edge portion of the resist 6 has a shape as if it was etched.

Next, as shown in FIG. 46, the resist 6 on the lower layer wiring 2 is peeled off, and the insulating film 3 is formed on the lower layer wiring 2 by the anodic oxidation method. At the same time, the lower layer wiring 2 is patterned. .

At this time, since the tantalum film is thin near the TFD elements, the growth of the oxide film stops earlier than in the central portion between the elements, which causes the central portion between the TFD elements not to grow. Anodized portion 10 is produced.

Further, as shown in FIG. 47, on the insulating film 3, indium tin oxide (I
TO) is formed into a film by the spattering method. Then, the same resist 6 pattern as the upper layer wiring 4 is formed on the ITO which is the material of the upper layer wiring 4 by the photolithography method.

Further, as shown in FIG. 48, using this resist 6 pattern as an etching mask, an upper wiring 4 pattern is formed by a dry etching method or a wet etching method.

Further, as shown in FIG. 49, the TFD element is formed by etching the insulating film 3 by the dry etching method using the patterned upper layer wiring 4 pattern as an etching mask.

When the insulating film 3 is etched, the resist 6 used for forming the upper layer wiring 4 pattern may be peeled off, or the insulating film 3 may be directly etched without being peeled off. Then, the resist 6 may be peeled off thereafter.

The dry etching of the insulating film 3 is performed under the same conditions as the dry etching of tantalum. The dry etching conditions for this tantalum are described above.

Further, as shown in FIG. 43, the resist 6 and the lower layer wiring 2 are controlled by controlling the flow rate of oxygen when tantalum, which is the material of the lower layer wiring 2, is etched.
The etching cross-section may be tapered by controlling the etching rate ratio of the material tantalum.
The TFD element formed by this method is as shown in FIG. 50, and has a structure in which the upper layer wiring 4 is more likely to overlap.

Next, a manufacturing method of an embodiment different from the above-described manufacturing method of the thin film diode will be described.

First, the structure of the lower layer wiring 2 pattern and the insulating film as shown in FIG. 46 is obtained by using the same manufacturing method as described above.

Further, as shown in FIG. 47, on the insulating film 3, indium tin oxide (I
TO) is formed into a film by the spattering method. Then, the same resist 6 pattern as the upper layer wiring 4 is formed on the ITO which is the material of the upper layer wiring 4 by the photolithography method.

Further, as shown in FIG. 48, using this resist 6 pattern as an etching mask, an upper layer wiring 4 pattern is formed by a dry etching method or a wet etching method.

The dry etching treatment and the wet etching treatment of ITO which is the material of the upper layer wiring 4 are performed under the same treatment conditions as described above.

Further, as shown in FIG. 51, the resist 6 on the patterned upper layer wiring 4 pattern is peeled off to form a resist 6 pattern larger than the upper layer wiring 4 pattern.

Next, as shown in FIG. 52, using this large resist 6 as an etching mask, the insulating film 3 is etched by a dry etching method, whereby a TFD element can be obtained.

The dry etching of the insulating film 3 is performed under the same processing conditions as the dry etching conditions of tantalum described above.

Next, a manufacturing method of an embodiment different from the above-described manufacturing method of the thin film diode will be described.

First, the structure of the lower layer wiring 2 pattern and the insulating film as shown in FIG. 46 is formed by using the same manufacturing method as described above.

Further, as shown in FIG. 47, on the insulating film 3, indium tin oxide (I
TO) is formed into a film by the spattering method. The same resist 6 pattern as that of the upper layer wiring 4 is formed on the ITO which is the material of the upper layer wiring 4 by the photolithography method.

Further, as shown in FIG. 48, using this resist 6 pattern as an etching mask, an upper wiring 4 pattern is formed by a dry etching method or a wet etching method.

The dry etching process and the wet etching process of ITO, which is the material of the upper layer wiring 4, are performed by the same processing method as the above-mentioned conditions.

Further, as shown in FIG. 53, the resist 6 on the patterned upper layer wiring 4 pattern is peeled off to form a protective film 5 pattern larger than the upper layer wiring 4 pattern.

Next, as shown in FIG. 54, the TFD element can be obtained by etching the insulating film 3 by a dry etching method using the protective film 5 pattern as an etching mask.

The dry etching process for the insulating film 3 is performed under the same processing conditions as the dry etching conditions for tantalum described above.

Next, a manufacturing method of an embodiment different from the above-described manufacturing method of the thin film diode will be described.

First, as shown in FIG. 19, on the glass substrate 1, as the material of the lower layer wiring 2, by the sputtering method,
A film of tantalum having a film thickness of 50 nm to 500 nm is formed.
Then, the same pattern of the resist 6 as the pattern of the lower layer wiring 2 is formed on the tantalum which is the material of the lower layer wiring 2 by the photolithography method.

Then, as shown in FIG. 20, dry etching of tantalum, which is the material of the lower layer wiring 2, is performed by using the patterned resist 6 as an etching mask to remove tantalum, which is the material of the lower layer wiring 2, in the thickness direction. Etching proceeds halfway.

At this time, the thickness of tantalum to be etched is set such that the film thickness of the material of the lower layer wiring 2 remaining on the glass substrate 1 is one half or less of the anodized film thickness.

The dry etching process and the wet etching process of tantalum, which is the material of the lower layer wiring 2, are performed by the same method as described above, and the lower layer wiring 2 of the pattern edge portion of the resist 6 as shown in FIG. To obtain various etching shapes.

Here, when tantalum is etched by the dry etching process, by increasing the flow rate of sulfur hexafluoride in the etching conditions, the fluorine radicals are likely to stagnate near the resist 6 pattern and partially Increasing the concentration increases the etching rate.

As a result, the etching shape is as shown in FIG.
As shown in FIG. 5, the etching shape is such that the lower layer wiring 2 of the pattern edge portion of the resist 6 is etched.

When the tantalum etching process is performed by wet etching, a waiting time is created when the glass substrate 1 is pulled out of the etching solution and transferred to the water washing tank, so that the etching solution easily accumulates near the resist 6 pattern. Become Therefore, the etching of this portion progresses more than the others, and the etching cross-sectional shape becomes an etching shape as if the lower layer wiring 2 of the pattern edge portion of the resist 6 was etched as shown in FIG.

Next, as shown in FIG. 46, the resist 6 on the lower layer wiring 2 is peeled off, and the insulating film 3 is formed on the lower layer wiring 2 by the anodic oxidation method. At the same time, the lower layer wiring 2 is patterned. .

At this time, since the film thickness of tantalum is thin near the TFD element, the growth of the oxide film stops earlier than in the central portion between the TFD elements, which causes T
An unanodized portion 10 is formed in the central portion between the FD elements.

Next, as shown in FIG. 55, a resist 6 pattern having a pattern size larger than the patterned lower layer wiring 2 pattern is formed by photolithography.

Next, as shown in FIG. 56, using the patterned resist 6 as an etching mask,
The insulating film 3 is etched by the dry etching method, and then the resist 6 on the insulating film 3 is peeled off.

The dry etching of the insulating film 3 is performed by the processing method under the same conditions as the dry etching processing of tantalum.

Further, as shown in FIG. 57, on the insulating film 3, indium tin oxide (I
TO) is formed into a film by the spattering method. After that, the same resist 6 pattern as that of the upper layer wiring 4 is formed on ITO, which is the material of the upper layer wiring 4, by the photolithography method, and the upper layer wiring 4 is dry-etched or wet-etched by using the resist 6 pattern as an etching mask. A TFD element can be obtained by forming a pattern.

When etching the tantalum which is the material of the lower layer wiring 2, the flow rate of oxygen is controlled to control the ratio of the etching rate of the resist 6 and the tantalum which is the material of the lower layer wiring 2 to control the etching cross section. It may be tapered. T formed by this method
The FD element is as shown in FIG. 58, and has a structure in which the upper layer wiring 4 is more likely to overlap.

Next, a manufacturing method of an embodiment different from the manufacturing method of the thin film diode described above will be described.

First, as shown in FIG. 24, the glass substrate 1
A tantalum film having a film thickness of 100 nm to 500 nm is formed as a material of the lower layer wiring 2 on the upper side by a sputtering method. Next, the same pattern of the resist 6 as the pattern of the lower layer wiring 2 is formed on the tantalum which is the material of the lower layer wiring 2 by the photolithography method.

Next, as shown in FIG. 25, using this patterned resist 6 as an etching mask,
Tantalum, which is the material of the lower layer wiring 2, is subjected to dry etching processing or wet etching processing.

The dry etching process and the wet etching process of tantalum which is the material of the lower layer wiring 2 are performed by the same processing method as the above-mentioned conditions.

Next, as shown in FIG. 59, after removing the resist 6 on the lower layer wiring 2, tantalum, which is an insulating film material 7 of the same material as the lower layer wiring 2, is sputtered on the lower layer wiring 2 pattern. The film is formed again.

At this time, if the pressure in the sputtering apparatus is lowered, the mean free path of tantalum atoms becomes longer, and the film thickness becomes thinner in the vicinity of the element under the influence of the pattern, resulting in the shape shown in FIG. .

At this time, the thickness of the tantalum film to be formed is
The thickness should be half or less of the anodized film thickness.

Next, as shown in FIG. 46, the insulating film 3 is formed on the lower layer wiring 2 by the anodic oxidation method.

Further, as shown in FIG. 47, on the insulating film 3, indium tin oxide (I
TO) is formed into a film by the spattering method. Then, the same resist 6 pattern as the upper layer wiring 4 is formed on the ITO which is the material of the upper layer wiring 4 by the photolithography method.

Next, as shown in FIG. 48, using this resist 6 pattern as an etching mask, an upper wiring 4 pattern is formed by a dry etching method or a wet etching method.

What is the dry etching process and the wet etching process of ITO which is the material of the upper layer wiring 4. The same processing method as the above conditions is used.

Further, as shown in FIG. 49, the TFD element can be obtained by etching the insulating film 3 by dry etching using the patterned upper layer wiring 4 with four patterns as an etching mask. it can.

The dry etching of the insulating film 3 and the unanodized portion 10 is performed by the same processing method as the dry etching processing condition of tantalum.

Further, as shown in FIG. 3, when etching tantalum which is the material of the lower layer wiring 2, by controlling the flow rate of oxygen, the ratio of the etching rate of the resist 6 and the tantalum which is the material of the lower layer wiring 2 is changed. By controlling, the etching cross section may be tapered. The TFD element formed by this method is as shown in FIG. 58, and has a structure in which the upper layer wiring 4 is more likely to overlap.

Next, a manufacturing method of an embodiment different from the above-described manufacturing method of the thin film diode will be described.

First, as shown in FIG. 19, the glass substrate 1
A film of tantalum having a film thickness of 100 nm to 500 nm is formed as a material for the lower layer wiring 2 on the upper side by a sputtering method. Next, the same pattern of the resist 6 as the pattern of the lower layer wiring 2 is formed on the tantalum which is the material of the lower layer wiring 2 by the photolithography method.

Next, as shown in FIG. 34, using the patterned resist 6 as an etching mask, dry etching or wet etching of tantalum, which is the material of the lower layer wiring 2, is performed.

The dry etching process and the wet etching process of tantalum, which is the material of the lower layer wiring 2, are performed by the same processing method as the above-mentioned conditions.

Next, as shown in FIG. 60, tantalum, which is the insulating film material 7 made of the same material as the lower layer wiring 2, is film-formed again on the lower layer wiring 2 pattern by the sputtering method.

At this time, if the pressure in the sputtering apparatus is lowered, the mean free path of tantalum atoms becomes long, and the film thickness becomes thin near the element due to the influence of the pattern, resulting in the shape shown in FIG. .

At this time, the thickness of the tantalum to be formed as a film is set to be equal to or less than half the thickness of the anodized film. Here, for example, when the anodic oxide film thickness is desired to be 200 nm, it is set to 100 nm or less.

Then, as shown in FIG. 61, the insulating film material 7 on the resist 6 pattern is peeled off together with the resist 6.

Next, as shown in FIG. 46, the insulating film 3 is formed on the lower wiring 2 by the anodic oxidation method.

At this time, since the film thickness of tantalum is thin near the elements, the growth of the oxide film stops earlier than in the central portion between the TDF elements, which causes the central portion between the TFD elements not to grow. Anodized portion 10 is produced.

Next, as shown in FIG. 55, a resist 6 pattern having a pattern size larger than that of the patterned lower layer wiring 2 pattern is formed by photolithography.

Next, as shown in FIG. 56, using the patterned resist 6 as an etching mask,
The insulating film 3 is etched by a dry etching method, and the resist 6 on the insulating film 3 is removed.

Further, as shown in FIG. 47, on the insulating film 3, indium tin oxide (I
TO) is formed into a film by the spattering method. Then, the same resist 6 as the pattern of the upper layer wiring 4 is formed on the ITO which is the material of the upper layer wiring 4 by the photolithography method.
Form a pattern.

Next, as shown in FIG. 48, using this resist 6 pattern as an etching mask, an upper wiring 4 pattern is formed by a dry etching method or a wet etching method.

The dry etching process and the wet etching process of ITO, which is the material of the upper layer wiring 4, are performed by the same processing method as the above-mentioned conditions.

Further, as shown in FIG. 49, a TFD element can be obtained by etching the insulating film 3 by a dry etching method using the patterned upper layer wiring 4 pattern as an etching mask. .

The dry etching of the insulating film 3 and the non-anodized portion 10 is performed under the same processing conditions as the dry etching processing condition of tantalum described above.

Further, as shown in FIG. 3, when etching tantalum, which is the material for the lower layer wiring 2, by controlling the flow rate of oxygen, the ratio of the etching rate of the resist 6 to the tantalum, which is the material for the lower layer wiring 2, is adjusted. By controlling, the etching cross section may be tapered. The TFD element formed by this method is as shown in FIG. 58, and has a structure in which the upper layer wiring 4 is more likely to overlap.

Next, a manufacturing method of an embodiment different from the above-described manufacturing method of the thin film diode will be described.

First, as shown in FIG. 24, the glass substrate 1
A film of tantalum having a film thickness of 50 nm to 500 nm is formed on the upper layer as a material of the lower layer wiring 2 by a sputtering method.
Then, the same pattern of the resist 6 as the pattern of the lower layer wiring 2 is formed on the tantalum which is the material of the lower layer wiring 2 by the photolithography method.

Next, as shown in FIG. 25, using the patterned resist 6 as an etching mask, dry etching or wet etching of tantalum, which is the material of the lower layer wiring 2, is performed.

The dry etching treatment and the wet etching treatment of tantalum, which is the material of the lower layer wiring 2, are performed by the same treatment method as the above-mentioned conditions.

Next, as shown in FIG. 59, tantalum, which is the insulating film material 7 of the same material as the lower layer wiring 2, is formed again on the lower layer wiring 2 pattern by the sputtering method.

At this time, if the pressure in the sputtering apparatus is lowered, the mean free path of tantalum atoms becomes long, and the film thickness becomes thin near the element due to the influence of the pattern, resulting in the shape shown in FIG. .

At this time, the thickness of the tantalum film to be formed is
The thickness should be half or less of the anodized film thickness. Here, for example, if the film thickness of anodic oxidation is desired to be 200 nm, it is set to 100 nm or less.

Next, as shown in FIG. 46, the insulating film 3 is formed on the lower wiring 2 by the anodic oxidation method.

At this time, since the film thickness of tantalum is thin near the elements, the growth of the oxide film stops earlier than in the central portion between the elements, which causes the non-anodized oxide in the central portion between the elements. Part 10 results.

Further, as shown in FIG. 47, on the insulating film 3, indium tin oxide (I
TO) is formed into a film by the spattering method. Then, the same resist 6 pattern as the upper layer wiring 4 is formed on the ITO which is the material of the upper layer wiring 4 by the photolithography method.

Further, as shown in FIG. 48, using this resist 6 pattern as an etching mask, an upper layer wiring 4 pattern is formed by a dry etching method or a wet etching method.

The dry etching process and the wet etching process of ITO, which is the material of the upper layer wiring 4, are performed by the same processing method as the above-mentioned conditions.

Further, as shown in FIG. 49, the TFD element can be obtained by etching the insulating film 3 by a dry etching method using the patterned upper layer wiring 4 pattern as an etching mask. .

When the insulating film 3 is etched, the resist 6 used for forming the upper wiring 4 pattern may be peeled off, or the insulating film 3 may be directly etched without peeling. Then, the resist 6 may be peeled off thereafter.

The dry etching process for the insulating film 3 is performed under the same process conditions as the dry etching conditions for tantalum described above.

Further, as shown in FIG. 3, when etching tantalum, which is the material of the lower layer wiring 2, by controlling the flow rate of oxygen, the ratio of the etching rate of the resist 6 to that of tantalum, which is the material of the lower layer wiring 2, is adjusted. By controlling, the etching cross section may be tapered. The TFD element formed by this method is as shown in FIG. 50, and has a structure in which the upper layer wiring 4 is more likely to overlap.

Next, a manufacturing method of an embodiment different from the above-described manufacturing method of the thin film diode will be described.

First, the structure of the lower layer wiring 2 pattern and the insulating film as shown in FIG. 46 is formed using the same manufacturing method as described above.

Further, as shown in FIG. 47, on the insulating film 3, indium tin oxide (I
A film of (TO) is formed by the spattering method, and the same resist 6 pattern as that of the upper layer wiring 4 is formed on this indium tin oxide (ITO) which is the material of the upper layer wiring 4 by the photolithography method.

Further, as shown in FIG. 48, using this resist 6 pattern as an etching mask, an upper layer wiring 4 pattern is formed by a dry etching method or a wet etching method.

The dry etching treatment and the wet etching treatment of indium tin oxide (ITO) which is the material of the upper layer wiring 4 are performed by the same treatment method as the above-mentioned conditions.

Further, as shown in FIG. 51, the resist 6 on the patterned upper layer wiring 4 pattern is peeled off to form a resist 6 pattern larger than the upper layer wiring 4 pattern.

Next, as shown in FIG. 52, the TFD element can be obtained by etching the insulating film 3 by a dry etching method using the large resist 6 as an etching mask.

The dry etching of the insulating film 3 is performed under the same conditions as the dry etching of tantalum.

Next, a manufacturing method of an embodiment different from the above-described manufacturing method of the thin film diode will be described.

First, the structure of the lower layer wiring 2 pattern and the insulating film as shown in FIG. 46 is obtained using the same manufacturing method as described above.

Further, as shown in FIG. 47, on the insulating film 3, indium tin oxide (I
TO) is formed into a film by the spattering method. After that, indium tin oxide (I
The same resist 6 pattern as the upper layer wiring 4 is formed on the TO) by the photolithography method.

Further, as shown in FIG. 48, using this resist 6 pattern as an etching mask, an upper layer wiring 4 pattern is formed by a dry etching method or a wet etching method.

The dry etching treatment and the wet etching treatment of indium tin oxide (ITO) which is the material of the upper layer wiring 4 are performed by the same treatment method as the above-mentioned conditions.

Further, as shown in FIG. 53, the resist 6 on the patterned upper layer wiring 4 pattern is peeled off to form a protective film 5 pattern larger than the upper layer wiring 4 pattern.

Next, as shown in FIG. 54, the TFD element can be obtained by etching the insulating film 3 by a dry etching method using the protective film 5 pattern as an etching mask.

Dry etching of the insulating film 3 is performed under the same processing conditions as the dry etching processing conditions for tantalum described above.

Next, a manufacturing method of an embodiment different from the above-described manufacturing method of the thin film diode will be described.

First, as shown in FIG. 19, the glass substrate 1
A film of tantalum having a film thickness of 50 nm to 500 nm is formed on the upper layer as a material of the lower layer wiring 2 by a sputtering method.
Then, the same pattern of the resist 6 as the pattern of the lower layer wiring 2 is formed on the tantalum which is the material of the lower layer wiring 2 by the photolithography method.

Next, as shown in FIG. 25, using this patterned resist 6 as an etching mask,
Tantalum, which is the material of the lower layer wiring 2, is subjected to dry etching processing or wet etching processing.

Next, as shown in FIG. 60, tantalum, which is the insulating film material 7 of the same material as that of the lower layer wiring 2, is formed again on the lower layer wiring 2 pattern by the sputtering method.

At this time, if the pressure in the sputtering apparatus is lowered, the mean free path of tantalum atoms becomes long, and the film thickness becomes thin near the element due to the influence of the pattern, resulting in the shape shown in FIG. .

At this time, the thickness of the tantalum film to be formed is
The thickness should be half or less of the anodized film thickness. Here, for example, if the film thickness of anodic oxidation is desired to be 200 nm, it is set to 100 nm or less.

Next, as shown in FIG. 46, the insulating film 3 is formed on the lower wiring 2 by the anodic oxidation method.

At this time, since the film thickness of tantalum is thin near the TFD element, the growth of the oxide film stops earlier than in the central portion between the elements, which causes the non-anodized portion in the central portion between the elements. The oxidized portion 10 is generated.

Further, as shown in FIG. 47, on the insulating film 3, indium tin oxide (I
TO) is formed into a film by the spattering method. After that, indium tin oxide (I
The same resist 6 pattern as the upper layer wiring 4 is formed on the TO) by the photolithography method.

Further, as shown in FIG. 48, using this resist 6 pattern as an etching mask, an upper layer wiring 4 pattern is formed by a dry etching method or a wet etching method.

The dry etching process and the wet etching process of indium tin oxide (ITO) which is the material of the upper layer wiring 4 are performed by the same processing method as the above-mentioned conditions.

Further, as shown in FIG. 49, the TFD element can be obtained by etching the insulating film 3 by a dry etching method using the patterned upper layer wiring 4 pattern as an etching mask. .

When the insulating film 3 is etched, the resist 6 used for forming the upper wiring 4 pattern may be peeled off, or the insulating film 3 may be etched as it is without peeling. Then, the resist 6 may be peeled off thereafter.

The dry etching of the insulating film 3 is performed under the same processing conditions as the dry etching processing of tantalum described above.

Further, as shown in FIG. 3, when etching tantalum, which is the material for the lower layer wiring 2, by controlling the flow rate of oxygen, the ratio of the etching rate of the resist 6 and the tantalum, which is the material for the lower layer wiring 2, is adjusted. By controlling, the etching cross section may be tapered. The TFD element formed by this method is as shown in FIG. 50, and has a structure in which the upper layer wiring 4 is more likely to overlap.

Next, a manufacturing method of an embodiment different from the above-described manufacturing method of the thin film diode will be described.

First, the structure of the lower layer wiring 2 pattern and the insulating film as shown in FIG. 46 is formed using the same manufacturing method as described above.

Further, as shown in FIG. 47, on the insulating film 3, indium tin oxide (I
TO) is formed into a film by the spattering method. After that, indium tin oxide (I
The same resist 6 pattern as the upper layer wiring 4 is formed on the TO) by the photolithography method.

Further, as shown in FIG. 48, using this resist 6 pattern as an etching mask, an upper layer wiring 4 pattern is formed by a dry etching method or a wet etching method.

The dry etching process and the wet etching process of indium tin oxide (ITO) which is the material of the upper layer wiring 4 are performed by the same processing method as the above-mentioned conditions.

Further, as shown in FIG. 51, the resist 6 on the patterned upper layer wiring 4 pattern is peeled off to form a resist 6 pattern larger than the upper layer wiring 4 pattern.

Next, as shown in FIG. 52, the TFD element can be obtained by etching the insulating film 3 by a dry etching method using the large resist 6 as an etching mask.

The dry etching of the insulating film 3 is performed under the same processing conditions as the dry etching processing condition of tantalum described above.

Next, a manufacturing method of an embodiment different from the manufacturing method of the thin film diode described above will be described.

First, the structure of the lower layer wiring 2 pattern and the insulating film as shown in FIG. 46 is formed using the same manufacturing method as described above.

Further, as shown in FIG. 47, on the insulating film 3, indium tin oxide (I
TO) is formed into a film by the spattering method. After that, indium tin oxide (I
The same resist 6 pattern as the upper layer wiring 4 is formed on the TO) by the photolithography method.

Further, as shown in FIG. 48, using this resist 6 pattern as an etching mask, an upper layer wiring 4 pattern is formed by a dry etching method or a wet etching method.

The dry etching treatment and the wet etching treatment of indium tin oxide (ITO) which is the material of the upper layer wiring 4 are performed by the same treatment method as the above-mentioned conditions.

Further, as shown in FIG. 53, the resist 6 on the patterned upper layer wiring 4 pattern is peeled off to form a protective film 5 pattern larger than the upper layer wiring 4 pattern.

Next, as shown in FIG. 54, the TFD element can be obtained by etching the insulating film 3 by a dry etching method using the pattern of the protective film 5 as an etching mask.

The dry etching of the insulating film 3 is performed under the same processing conditions as the dry etching processing condition of tantalum described above.

In the manufacturing method of the embodiment of the present invention described above, in the manufacturing method including the step of forming the insulating film material 7 on the lower wiring 2 pattern, tantalum is used as the insulating film material 7 instead of tantalum. Aluminum (Al) may be used.

In this case, the aluminum etching treatment is carried out with a mixed solution of phosphoric acid, nitric acid, acetic acid and water in a ratio of 5: 1: 2: 3.

[0325]

As is clear from the above description, in the active element according to the present invention, the upper layer wiring easily overlaps the lower layer wiring, and the difference in film quality of the insulating film between the element portion and its vicinity is caused. Does not happen. Therefore, element defects due to disconnection at the step portion are reduced, and the display quality of the liquid crystal display device can be improved. Furthermore, in the manufacturing method including the step of reducing the pattern dimension of the resist by ashing at the time of patterning the lower layer wiring,
Since the pattern size of the active element can be made smaller than the pattern formed by the photolithography method, the active element can be miniaturized beyond the limit of the photolithography method.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a structure and a manufacturing method of a liquid crystal display device in an example of the present invention.

FIG. 2 is a cross-sectional view showing a structure and a manufacturing method of a conventional liquid crystal display device.

FIG. 3 is a cross-sectional view showing a structure and a manufacturing method of a liquid crystal display device according to a conventional technique.

FIG. 4 is a cross-sectional view showing a structure and a manufacturing method of a liquid crystal display device in an example of the present invention.

FIG. 5 is a cross-sectional view showing a structure and a manufacturing method of a liquid crystal display device in an example of the present invention.

FIG. 6 is a cross-sectional view showing a structure and a manufacturing method of a liquid crystal display device in an example of the present invention.

FIG. 7 is a cross-sectional view showing a structure and a manufacturing method of a liquid crystal display device in an example of the present invention.

FIG. 8 is a cross-sectional view showing a structure and a manufacturing method of a conventional liquid crystal display device.

FIG. 9 is a cross-sectional view showing a structure and a manufacturing method of a conventional liquid crystal display device.

FIG. 10 is a cross-sectional view showing a structure and a manufacturing method of a liquid crystal display device in an example of the present invention.

FIG. 11 is a cross-sectional view showing the structure and the manufacturing method of the liquid crystal display device in the example of the present invention.

FIG. 12 is a cross-sectional view showing a structure and a manufacturing method of a liquid crystal display device in an example of the present invention.

FIG. 13 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 14 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 15 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 16 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 17 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 18 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 19 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 20 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 21 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 22 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 23 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 24 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 25 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 26 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 27 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 28 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 29 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 30 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 31 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 32 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 33 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 34 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 35 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 36 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 37 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 38 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 39 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 40 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 41 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 42 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 43 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 44 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 45 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 46 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 47 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 48 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 49 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 50 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 51 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 52 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 53 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 54 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 55 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 56 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 57 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 58 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 59 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 60 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

FIG. 61 is a cross-sectional view showing the method of manufacturing the liquid crystal display device in the example of the present invention.

[Explanation of symbols]

 1 glass substrate 2 lower layer wiring 3 insulating film 4 upper layer wiring 5 protective film 6 resist 7 insulating film material 10 unanodized region

Claims (37)

[Claims] 1. A lower layer wiring and an insulating film provided on the surface of the lower layer wiring and an upper layer wiring provided on the insulating film, wherein the cross-sectional shape of the lower layer wiring or the cross-sectional shape of the lower layer wiring and the insulating film has a step. A liquid crystal display device having. 2. A lower layer wiring material is film-formed on a glass substrate, a resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer is formed by a dry etching method or a wet etching method using the resist as an etching mask. After the wiring material is etched, the resist pattern size is reduced by ashing the resist, and the resist with the reduced pattern size is used as an etching mask by the dry etching method or the wet etching method to the middle of the thickness direction. A method for manufacturing a liquid crystal display device, comprising: etching a lower layer wiring material to form a lower layer wiring; and forming an insulating film and an upper layer wiring on the lower layer wiring. 3. A film of a lower layer wiring material is formed on a glass substrate, a pattern of a first resist is formed on the lower layer wiring material by a photolithography method, and dry etching is performed by using the first resist as an etching mask. Method or wet etching method is used to etch the lower layer wiring material, the first resist is peeled off, and a pattern of a second resist having a smaller pattern size than the first resist is formed on the lower layer wiring material pattern. Using the second resist as an etching mask, the lower layer wiring material is etched by dry etching or wet etching to the middle of the thickness direction to form a lower layer wiring, and an insulating film and an upper layer wiring are formed on the lower layer wiring. And a method for manufacturing a liquid crystal display device, the method comprising: 4. A lower wiring material is formed on a glass substrate, a resist pattern is formed on the lower wiring material by a photolithography method, and the resist is used as an etching mask by a dry etching method or a wet etching method. After etching the lower layer wiring material halfway in the thickness direction, the resist pattern size is reduced by ashing the resist,
Further, by using the resist having the reduced pattern size as an etching mask, the lower layer wiring material is etched by a dry etching method or a wet etching method to form a lower layer wiring, and an insulating film and an upper layer wiring are formed on the lower layer wiring. A method for manufacturing a liquid crystal display device, comprising: 5. A film of a lower layer wiring material is formed on a glass substrate, a pattern of a first resist is formed on the lower layer wiring material by a photolithography method, and the first resist is used as an etching mask to perform a dry process. After etching the lower layer wiring material halfway in the thickness direction by an etching method or a wet etching method, the first resist is peeled off, and a photolithography method is used to form a pattern dimension larger than that of the first resist on the lower layer wiring material pattern. Forming a small second resist pattern,
Further, by using the second resist as an etching mask, the lower layer wiring material is etched by a dry etching method or a wet etching method to form a lower layer wiring, and an insulating film and an upper layer wiring are formed on the lower layer wiring. A method for manufacturing a characteristic liquid crystal display device. 6. A film of a lower layer wiring material is formed on a glass substrate, a first resist pattern is formed on the lower layer wiring material by a photolithography method, and a dry etching method is performed by using the first resist as an etching mask. Alternatively, the lower-layer wiring material is etched halfway in the thickness direction by the wet etching method, the first resist is peeled off, and the pattern dimension of the lower-layer wiring material pattern is larger than that of the first resist by the photolithography method. A pattern of a second resist is formed, the lower layer wiring material is etched by a dry etching method or a wet etching method using the second resist as an etching mask to form a lower layer wiring, and an insulating property is formed on the lower layer wiring. Liquid crystal characterized by forming a film and upper wiring Manufacturing method of display device. 7. A film of a lower layer wiring material is formed on a glass substrate, a pattern of a first resist is formed on the lower layer wiring material by photolithography, and dry etching is performed using the first resist as an etching mask. Method or wet etching method is used to etch the lower layer wiring material, then the first resist is peeled off, and an insulating film material that is the same material as the lower layer wiring material is formed on the lower layer wiring material pattern. A pattern of a second resist having a pattern size larger than that of the first resist is formed on the material, and the insulating film material is etched by a dry etching method or a wet etching method using the second resist as an etching mask. Then, the lower layer wiring is formed, and the insulating film and the upper layer wiring are formed on the lower layer wiring. A method for manufacturing a liquid crystal display device, comprising: 8. A film of a lower layer wiring material is formed on a glass substrate, a pattern of a first resist is formed on the lower layer wiring material by a photolithography method, and dry etching is performed using the first resist as an etching mask. Method or wet etching method is used to etch the lower layer wiring material, then the first resist is peeled off, and an insulating film material that is the same material as the lower layer wiring material is formed on the lower layer wiring material pattern. A pattern of a second resist having a pattern size smaller than that of the first resist is formed on the material, and the insulating film material is etched by a dry etching method or a wet etching method using the second resist as an etching mask. Then, the lower layer wiring is formed, and the insulating film and the upper layer wiring are formed on the lower layer wiring. A method for manufacturing a liquid crystal display device, comprising: 9. A lower wiring material is formed on a glass substrate, a pattern of a first resist is formed on the lower wiring material by a photolithography method, and the first resist is used as an etching mask for dry etching. Method or wet etching method is used to etch the lower layer wiring material, and then the first resist is peeled off, and an insulating film material, which is a material different from the lower layer wiring material, is formed on the lower layer wiring material pattern to form the insulating film. A pattern of a second resist having a pattern size larger than that of the first resist is formed on the film material, and the insulating film material is etched by a dry etching method or a wet etching method using the second resist as an etching mask. To form the lower layer wiring, and form the insulating film and the upper layer wiring on the lower layer wiring. A method for manufacturing a liquid crystal display device, comprising: 10. A film of a lower layer wiring material is formed on a glass substrate, a pattern of a first resist is formed on the lower layer wiring material by a photolithography method, and dry etching is performed using the first resist as an etching mask. Method or wet etching method is used to etch the lower layer wiring material, and then the first resist is peeled off, and an insulating film material, which is a material different from the lower layer wiring material, is formed on the lower layer wiring material pattern to form the insulating film. A pattern of a second resist having a pattern size smaller than that of the first resist is formed on the film material, and the insulating film material is etched by a dry etching method or a wet etching method using the second resist as an etching mask. Form the lower layer wiring, and form the insulating film and the upper layer wiring on the lower layer wiring. A method for manufacturing a liquid crystal display device, comprising: 11. A film of a lower layer wiring material is formed on a glass substrate, a pattern of a first resist is formed on the lower layer wiring material by a photolithography method, and the first resist is used as an etching mask for dry etching. Method or wet etching method is used to etch the lower layer wiring material, and then an insulating film material, which is the same material as the lower layer wiring material, is formed on the lower layer wiring material pattern, and then the insulating film on the resist is formed together with the first resist. The material is peeled off, a pattern of a second resist having a pattern dimension larger than that of the first resist is formed on the lower layer wiring material and the insulating film material, and the second resist is used as an etching mask. Lower layer wiring by etching the insulating film material by dry etching method or wet etching method Is formed, and an insulating film and an upper layer wiring are formed on the lower layer wiring, and a method for manufacturing a liquid crystal display device. 12. A film of a lower layer wiring material is formed on a glass substrate, a pattern of a first resist is formed on the lower layer wiring material by photolithography, and dry etching is performed using the first resist as an etching mask. Method or wet etching method is used to etch the lower layer wiring material, and then an insulating film material, which is a material different from the lower layer wiring material, is formed on the lower layer wiring material pattern. The film material is peeled off, a pattern of a second resist having a pattern size larger than that of the first resist is formed on the lower layer wiring material and the insulating film material, and the second resist is used as an etching mask. By etching the insulating film material by dry etching or wet etching. A method of manufacturing a liquid crystal display device, which comprises forming a line and forming an insulating film and an upper layer wiring on the lower layer wiring. 13. A lower wiring material is formed on a glass substrate, a resist pattern is formed on the lower wiring material by a photolithography method, and the resist is used as an etching mask by a dry etching method or a wet etching method. After etching the lower layer wiring material partway in the thickness direction, the resist is peeled off, an insulating film is formed by an anodic oxidation method, at the same time the lower layer wiring is patterned, and the upper layer wiring is formed on this. Liquid crystal display device manufacturing method. 14. A lower layer wiring material is formed on a glass substrate, a resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer is formed by a dry etching method or a wet etching method using the resist as an etching mask. After etching the wiring material, the resist is peeled off, on this lower layer wiring material pattern, an insulating film material of the same material as the lower layer wiring material is formed into a film, and further, after forming an insulating film by an anodizing method,
A method of manufacturing a liquid crystal display device, which comprises forming an upper layer wiring thereon. 15. A lower layer wiring material is formed on a glass substrate, a resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer wiring is formed by a dry etching method or a wet etching method using the resist as an etching mask. After etching the material, the resist is peeled off, an insulating film material of a material different from that of the lower layer wiring material is formed on this lower layer wiring material pattern, and an insulating film is further formed by an anodic oxidation method. A method for manufacturing a liquid crystal display device, which comprises forming an upper wiring. 16. A lower layer wiring material is formed on a glass substrate, a resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer wiring is formed by a dry etching method or a wet etching method using the resist as an etching mask. After the material is etched and an insulating film material of the same material as the lower layer wiring material is formed on this lower layer wiring material pattern, the insulating film material on the resist is peeled off together with the resist, and the insulating property is further improved by the anodic oxidation method. A method for manufacturing a liquid crystal display device, comprising forming a film and then forming an upper layer wiring thereon. 17. A lower layer wiring material is formed on a glass substrate, a resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer wiring is formed by a dry etching method or a wet etching method using the resist as an etching mask. After etching the material and forming an insulating film material of a different material from the lower wiring material on this lower wiring material pattern, peeling the insulating film material together with the resist, and further forming an insulating film by the anodizing method. After that, a method for manufacturing a liquid crystal display device is characterized in that an upper layer wiring is formed thereon. 18. A lower layer wiring material is formed on a glass substrate, a resist pattern is formed on the lower layer wiring material by a photolithography method, and the resist pattern is formed by a dry etching method or a wet etching method using the resist as an etching mask. After etching the lower layer wiring material halfway in the direction, the resist is peeled off, an insulating film and an unanodized portion are formed by an anodic oxidation method, an upper layer wiring is formed on this, and this upper layer wiring pattern is used as an etching mask. A method of manufacturing a liquid crystal display device, characterized in that the insulating film and the unanodized portion are etched. 19. A lower layer wiring material is formed on a glass substrate, a resist pattern is formed on the lower layer wiring material by a photolithography method, and the resist pattern is used as an etching mask to obtain a thickness by a dry etching method or a wet etching method. After etching the lower layer wiring material halfway in the direction, the resist is peeled off, an insulating film and an unanodized portion are formed by an anodic oxidation method, an upper layer wiring pattern is formed on this, and further on this upper layer wiring pattern. A method for manufacturing a liquid crystal display device, wherein a resist pattern larger than the upper wiring pattern is formed on the substrate, and the insulating film and the unanodized portion are etched using the resist pattern as an etching mask. 20. A lower layer wiring material is formed on a glass substrate, a resist pattern is formed on the lower layer wiring material by a photolithography method, and the resist pattern is formed by a dry etching method or a wet etching method using the resist as an etching mask. After etching the lower layer wiring material halfway in the direction, the resist is peeled off, an insulating film and an unanodized portion are formed by an anodic oxidation method, an upper layer wiring is formed on this, and further on this upper layer wiring pattern. A method for manufacturing a liquid crystal display device, which comprises patterning a protective film, and etching the insulating film and the unanodized portion using the protective film pattern as an etching mask. 21. A lower layer wiring material is formed on a glass substrate, a first resist pattern is formed on the lower layer wiring material by photolithography, and the first resist pattern is used as an etching mask by a dry etching method or After etching the lower layer wiring material to the middle of the thickness direction by the wet etching method, the first resist is peeled off, an insulating film and an unanodized portion are formed by the anodic oxidation method, and further on the lower layer wiring material pattern. First
Forming a second resist pattern having a pattern size larger than that of the resist, and using the second resist as an etching mask to etch the insulating film and the unanodized portion by a dry etching method or a wet etching method. A method for manufacturing a liquid crystal display device, which comprises forming an upper layer wiring thereon. 22. A lower layer wiring material is formed on a glass substrate, a first resist pattern is formed on the lower layer wiring material by a photolithography method, and the first resist pattern is used as an etching mask by a dry etching method or After etching the lower layer wiring material by the wet etching method and peeling off the first resist, an insulating film material of the same material as the lower layer wiring material is formed on this lower layer wiring material pattern and further insulated by the anodic oxidation method. After forming the conductive film and the non-anodized portion, a second resist pattern having a pattern size larger than that of the first resist is further formed on the lower layer wiring material pattern, and the second resist pattern is further formed.
A method for manufacturing a liquid crystal display device, characterized in that the insulating film and the unanodized portion are etched by a dry etching method or a wet etching method using the resist as an etching mask, and an upper wiring is formed thereon. 23. A lower layer wiring material is formed on a glass substrate, a first resist pattern is formed on the lower layer wiring material by photolithography, and the first resist pattern is used as an etching mask by a dry etching method or After etching the lower layer wiring material by the wet etching method and peeling off the first resist, an insulating film material different from the lower layer wiring material is formed on the lower layer wiring material pattern and further insulated by the anodization method. After forming the conductive film, a second resist pattern having a pattern size larger than that of the first resist is formed on the lower layer wiring material pattern, and the second resist pattern is used as an etching mask by a dry etching method or The insulating film is etched by the wet etching method, and A method for manufacturing a liquid crystal display device, which comprises forming a layer wiring. 24. A lower layer wiring material is formed on a glass substrate, a first resist pattern is formed on the lower layer wiring material by a photolithography method, and the first resist pattern is used as an etching mask by a dry etching method or The lower layer wiring material is etched by a wet etching method, an insulating film material of the same material as the lower layer wiring material is formed on the lower layer wiring material pattern, and then the insulating film material on the resist is peeled off together with the first resist. ,
Further, after forming an insulating film and a non-anodized portion by an anodic oxidation method, a first layer is further formed on the lower wiring material pattern.
Forming a second resist pattern having a pattern size larger than that of the resist, and using the second resist as an etching mask, the insulating film and the unanodized portion are etched by the dry etching method or the wet etching method. Then, a method for manufacturing a liquid crystal display device, characterized in that an upper layer wiring is formed thereon. 25. A lower layer wiring material is formed on a glass substrate, a first resist pattern is formed on the lower layer wiring material by a photolithography method, and the first resist pattern is used as an etching mask by a dry etching method or After etching the lower layer wiring material by the wet etching method, after forming an insulating film material of a material different from the lower layer wiring material on the lower layer wiring material pattern,
Peel off the insulating film material on the resist together with the resist,
Further, after forming an insulating film by an anodic oxidation method, a second resist pattern having a pattern size larger than that of the first resist is further formed on this lower layer wiring material pattern,
Further, a method for manufacturing a liquid crystal display device, characterized in that the insulating film is etched by a dry etching method or a wet etching method using the second resist as an etching mask, and an upper wiring is formed thereon. 26. A lower layer wiring material is formed on a glass substrate, a resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer is formed by a dry etching method or a wet etching method using the resist pattern as an etching mask. After the wiring material is etched and the resist is stripped off, an insulating film material of the same material as the lower layer wiring material is formed on this lower layer wiring material pattern. A liquid crystal characterized by further forming an upper layer wiring pattern on the lower layer wiring material pattern and etching the insulating film and the unanodized portion using the upper layer wiring pattern as an etching mask. Manufacturing method of display device. 27. A lower layer wiring material is formed on a glass substrate, a resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer is formed by a dry etching method or a wet etching method using the resist pattern as an etching mask. After etching the wiring material and peeling off this resist, an insulating film material of the same material as the lower layer wiring material is formed on this lower layer wiring material pattern, and further, the insulating film and the unanodized portion are formed by the anodic oxidation method. After forming and, further forming an upper layer wiring pattern on this lower layer wiring material pattern, further forming a resist pattern larger than the upper layer wiring pattern on this upper layer wiring pattern, using this resist pattern as an etching mask The insulating film and the non-anodized part are used as an etching mask. A method for manufacturing a liquid crystal display device, which comprises etching the edge film and the unanodized portion. 28. A lower layer wiring material is formed on a glass substrate, a resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer is formed by a dry etching method or a wet etching method using the resist pattern as an etching mask. After etching the wiring material and peeling off this resist, an insulating film material of the same material as the lower layer wiring material is formed on this lower layer wiring material pattern, and further, the insulating film and the unanodized portion are formed by the anodic oxidation method. After forming the and, an upper layer wiring pattern is further formed on the lower layer wiring material pattern, a protective film is further formed on the upper layer wiring pattern, and the insulating film and the insulating film are not formed by using the protective film pattern as an etching mask. Etching the insulating film and unanodized part using the anodized part as an etching mask A method for manufacturing a liquid crystal display device, comprising: 29. A lower layer wiring material is formed on a glass substrate, a resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer is formed by a dry etching method or a wet etching method using the resist pattern as an etching mask. After the wiring material is etched and the resist is stripped off, an insulating film material different from the lower wiring material is formed on the lower wiring material pattern, and the insulating film and the non-anodized portion are further formed by the anodic oxidation method. A liquid crystal display characterized by further forming an upper layer wiring pattern on the lower layer wiring material pattern, and etching the insulating film and the non-anodized portion using the upper layer wiring pattern as an etching mask. Device manufacturing method. 30. A lower layer wiring material is formed on a glass substrate, a resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer is formed by a dry etching method or a wet etching method using the resist pattern as an etching mask. After the wiring material is etched and the resist is peeled off, an insulating film material of a material different from the lower wiring material is formed on the lower wiring material pattern, and an insulating film and an unanodized portion are further formed by an anodic oxidation method. After forming the above, an upper layer wiring pattern is further formed on this lower layer wiring material pattern, and a resist pattern larger than the upper layer wiring pattern is further formed on this upper layer wiring pattern, and this resist pattern is used as an etching mask for insulation. Insulate the film and the unanodized part with an etching mask A method for manufacturing a liquid crystal display device, which comprises etching the conductive film and an unanodized portion. 31. A lower layer wiring material is formed on a glass substrate, a resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer is formed by a dry etching method or a wet etching method using the resist pattern as an etching mask. After the wiring material is etched and the resist is peeled off, an insulating film material of a material different from the lower wiring material is formed on the lower wiring material pattern, and an insulating film and an unanodized portion are further formed by an anodic oxidation method. Then, an upper layer wiring pattern is further formed on this lower layer wiring material pattern, a protective film is further patterned on this upper layer wiring pattern, and the insulating film and the non-anodic layer are formed by using this protective film pattern as an etching mask. Etching the insulating film and the unanodized part using the oxidized part as an etching mask A method for manufacturing a liquid crystal display device, comprising: 32. A lower layer wiring material is formed on a glass substrate, a resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer is formed by a dry etching method or a wet etching method using the resist pattern as an etching mask. After the wiring material is etched and an insulating film material of the same material as the lower wiring material is formed on the lower wiring material pattern, the insulating film material on the resist is peeled off together with the resist, and the insulating film is anodized. And an unanodized part are formed, an upper layer wiring pattern is further formed on the lower layer wiring material pattern, and the insulating film and the unanodized part are etched using the upper layer wiring pattern as an etching mask. A method for manufacturing a characteristic liquid crystal display device. 33. A lower layer wiring material is formed on a glass substrate, a resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer is formed by a dry etching method or a wet etching method using the resist pattern as an etching mask. After the wiring material is etched and an insulating film material of the same material as the lower wiring material is formed on the lower wiring material pattern, the insulating film material on the resist is peeled off together with the resist, and the insulating film is anodized. And an unanodized portion are formed, an upper layer wiring pattern is further formed on this lower layer wiring material pattern, a resist pattern larger than the upper layer wiring pattern is formed on this upper layer wiring pattern, and this resist pattern is etched. The insulating film and the unanodized portion are used as a mask to etch A method for manufacturing a liquid crystal display device, which comprises etching an insulating film and a non-anodized portion as a etching mask. 34. A lower layer wiring material is formed on a glass substrate, a resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer is formed by a dry etching method or a wet etching method using the resist pattern as an etching mask. After the wiring material is etched and an insulating film material of the same material as the lower layer wiring material is formed on this lower layer wiring material pattern, the insulating film material on the resist is peeled off together with the resist, and further insulation is performed by the anodic oxidation method. After forming the conductive film and the unanodized portion, an upper layer wiring pattern is further formed on the lower layer wiring material pattern, a protective film is further formed on the upper layer wiring pattern, and the protective film pattern is used as an etching mask. Using the insulating film and the unanodized portion as an etching mask And a non-anodized portion are etched. 35. A lower layer wiring material is formed on a glass substrate, a resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer is formed by a dry etching method or a wet etching method using the resist pattern as an etching mask. After the wiring material is etched and an insulating film material of a material different from the lower wiring material is formed on this lower wiring material pattern, the insulating film material on the resist is peeled off together with the resist, and the insulating property is further improved by the anodic oxidation method. After forming the film and the unanodized part, further forming an upper layer wiring pattern on the lower layer wiring material pattern, and etching the insulating film and the unanodized part using the upper layer wiring pattern as an etching mask. A method for manufacturing a liquid crystal display device, comprising: 36. A lower layer wiring material is formed on a glass substrate, a resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer is formed by a dry etching method or a wet etching method using the resist pattern as an etching mask. After the wiring material is etched and an insulating film material of a material different from the lower wiring material is formed on this lower wiring material pattern, the insulating film material on the resist is peeled off together with the resist, and the insulating property is further improved by the anodic oxidation method. After forming the film and the unanodized portion, further on the lower layer wiring material pattern, to form an upper layer wiring pattern, further forming a resist pattern larger than the upper layer wiring pattern on the upper layer wiring pattern,
A method for manufacturing a liquid crystal display device, characterized in that the insulating film and the unanodized portion are etched using the resist pattern as an etching mask and the insulating film and the unanodized portion as etching masks. 37. A lower layer wiring material is formed on a glass substrate, a resist pattern is formed on the lower layer wiring material by a photolithography method, and the lower layer is formed by a dry etching method or a wet etching method using the resist pattern as an etching mask. After the wiring material is etched and an insulating film material of a material different from the lower wiring material is formed on this lower wiring material pattern, the insulating film material on the resist is peeled off together with the resist, and the insulating property is further improved by the anodic oxidation method. After forming the film and the unanodized portion, an upper layer wiring pattern is further formed on the lower layer wiring material pattern, a protective film is further formed on the upper layer wiring pattern, and the protective film pattern is used as an etching mask. Using the insulating film and the unanodized portion as an etching mask And a non-anodized portion are etched.