JPH06260478A - Formation of thin film pattern - Google Patents
Formation of thin film patternInfo
- Publication number
- JPH06260478A JPH06260478A JP4770493A JP4770493A JPH06260478A JP H06260478 A JPH06260478 A JP H06260478A JP 4770493 A JP4770493 A JP 4770493A JP 4770493 A JP4770493 A JP 4770493A JP H06260478 A JPH06260478 A JP H06260478A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- resist
- pattern
- film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 79
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000009713 electroplating Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 30
- 238000007747 plating Methods 0.000 claims description 27
- 239000013078 crystal Substances 0.000 claims description 3
- 230000007261 regionalization Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 30
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Landscapes
- Weting (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は薄膜のパターン形成方法
に関し、特にエッチングが困難な薄膜のパターン形成方
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film pattern forming method, and more particularly to a thin film pattern forming method which is difficult to etch.
【０００２】[0002]
【従来の技術】半導体プロセスを支える技術として薄膜
の微細パターン形成技術が重要な位置を占めている。従
来の半導体プロセスに使用される薄膜は、シリコンやそ
の酸化膜、アルミなどの電極材料に限られていた。近
年、強誘電体や磁性体などの機能材料を用いた電子デバ
イスの作製にこれらの技術が適用されるようになり、よ
り広範な薄膜材料のパターン形成技術が必要となってい
る。2. Description of the Related Art A thin film fine pattern forming technique occupies an important position as a technique for supporting a semiconductor process. Thin films used in conventional semiconductor processes have been limited to silicon, oxide films thereof, and electrode materials such as aluminum. In recent years, these techniques have been applied to the production of electronic devices using functional materials such as ferroelectrics and magnetic substances, and a wider range of pattern forming techniques for thin film materials is required.
【０００３】従来、以下のパターン形成方法がある。 １）マスク分離法： 成膜したい部分に穴の明いたメタ
ルマスクで基板をカバーし、成膜後メタルマスクを取り
外すことで薄膜パターンを形成する。広範な薄膜材料の
パターン形成が可能であるが、基板とマスクの熱膨張率
の違いによるパターンずれやマスク浮き、マスク自体の
加工精度などの問題があり、微細パターンの形成には不
向きである。Conventionally, there are the following pattern forming methods. 1) Mask separation method: A substrate is covered with a metal mask having a hole in a portion where a film is to be formed, and after the film is formed, the metal mask is removed to form a thin film pattern. Although it is possible to form a pattern of a wide range of thin film materials, there are problems such as a pattern shift due to a difference in coefficient of thermal expansion between a substrate and a mask, a mask floating, and a processing accuracy of the mask itself, which is not suitable for forming a fine pattern.
【０００４】２）エッチング法： 基板に全面に成膜
し、フォトレジストなどで残したい部分をカバーし、エ
ッチングでパターンを形成後、レジストを除去する。半
導体プロセスで一般的に使用されている方法で、ドライ
エッチングの出現でパターン形成できる薄膜の種類が広
がった。2) Etching method: A film is formed on the entire surface of a substrate, a portion to be left is covered with a photoresist or the like, a pattern is formed by etching, and then the resist is removed. With the use of methods commonly used in semiconductor processes, the advent of dry etching has broadened the types of thin films that can be patterned.
【０００５】３）リフトオフ法： 基板上にフォトレジ
ストなどのパターンを形成し、この上に成膜し、レジス
トを溶解除去すると同時にレジスト上の薄膜を除去す
る。エッチングが容易でない薄膜の場合はこの方法が用
いられている。3) Lift-off method: A pattern such as a photoresist is formed on a substrate, a film is formed on the pattern, the resist is dissolved and removed, and at the same time, the thin film on the resist is removed. This method is used for thin films that are not easily etched.
【０００６】ここで、従来のリフトオフ法について図２
を用いて説明を行う。 ａ）基板１上にレジストパターン３’を形成する。FIG. 2 shows the conventional lift-off method.
Will be explained. a) Form a resist pattern 3'on the substrate 1.
【０００７】ｂ）この上に所望の薄膜５を成膜する。 ｃ）レジスト３’を溶剤で溶解除去すると、レジスト上
の薄膜５ａが剥離し、レジストのない部分の薄膜５ｂの
パターンを残すことができる。B) A desired thin film 5 is formed on this. c) When the resist 3'is dissolved and removed with a solvent, the thin film 5a on the resist is peeled off, and the pattern of the thin film 5b on the part without the resist can be left.
【０００８】レジスト上の薄膜５ａをきれいに剥離する
には、レジスト３’の断面が基板から離れるほど開口幅
が狭くなるオーバーハング形状であることが望ましい。
オーバーハング部が大きいほど薄膜５ａと５ｂのギャッ
プが広く、溶剤が浸透し易く剥離が容易である。逆にオ
ーバーハングが少ないと、レジストの壁面へ薄膜５が回
り込んで５ａと５ｂがつながってしまい、剥離が困難
で、剥離できてもエッジにバリが生ずる。In order to cleanly remove the thin film 5a on the resist, it is desirable that the cross section of the resist 3'has an overhang shape in which the opening width becomes narrower as the distance from the substrate increases.
The larger the overhang portion, the wider the gap between the thin films 5a and 5b, and the more easily the solvent penetrates and the easier the peeling. On the other hand, if the overhang is small, the thin film 5 wraps around the wall surface of the resist and connects 5a and 5b, making it difficult to peel, and even if peeling is possible, burrs are generated at the edges.
【０００９】リフトオフ用のレジストパターンの形成に
は、レジストの表面が現像液に溶け難くなる処理を行っ
てから現像を行い、溶解度の差によってオーバーハング
形状を形成する方法が一般に用いられている。To form a resist pattern for lift-off, a method is generally used in which the resist surface is treated to make it difficult to dissolve in a developing solution and then developed to form an overhang shape by a difference in solubility.
【００１０】[0010]
【発明が解決しようとする課題】エッチングできない薄
膜の微細パターンを形成する場合、リフトオフ法を用い
るが、それには下記の制約がある。When forming a fine pattern of a thin film that cannot be etched, the lift-off method is used, but it has the following restrictions.
【００１１】１）パターニングされる薄膜よりも、レジ
ストの膜厚が１０倍以上ないときれいに薄膜の不要部分
の剥離ができない。1) Unless the thickness of the resist is 10 times or more that of the thin film to be patterned, the unnecessary portion of the thin film cannot be peeled off cleanly.
【００１２】２）成膜温度が高いとレジストの劣化やオ
ーバーハング形状のダレが生じ、パターン形成ができな
い。一般的なレジストでは１００℃以下が望ましい。2) When the film forming temperature is high, the resist is deteriorated and the overhang shape is sagged, so that the pattern cannot be formed. For a general resist, 100 ° C. or lower is desirable.
【００１３】従って、厚い膜や高温成膜の場合はメタル
マスクによる分離しか方法がなく、メタルマスクでは１
００μｍ程度の分離精度しか得られない。Therefore, in the case of thick film or high temperature film formation, there is only the method of separation by the metal mask, and the metal mask has only one method.
Only a separation accuracy of about 00 μm can be obtained.
【００１４】本発明は、従来のリフトオフ法に用いたレ
ジストの欠点を解消し、膜厚が厚く成膜温度が高い薄膜
でもリフトオフ可能とし、微細な薄膜パターンを形成す
ることを目的とする。An object of the present invention is to solve the drawbacks of the resist used in the conventional lift-off method, to enable lift-off even in a thin film having a large film thickness and a high film forming temperature, and to form a fine thin film pattern.
【００１５】[0015]
【課題を解決するための手段】この問題を解決するため
本発明は、基板上にレジストパターンを形成し、基板を
電極とした電気メッキで前記レジストよりも厚く形成し
たメッキ層をマスクとしてリフトオフを行うものであ
る。In order to solve this problem, according to the present invention, a resist pattern is formed on a substrate, and lift-off is performed by using a plating layer formed to be thicker than the resist by electroplating using the substrate as an electrode as a mask. It is something to do.
【００１６】[0016]
【作用】導電性を有する基板上に、もしくは導電性薄膜
を成膜した基板上にレジストパターンを形成後、基板を
電極として電気メッキを行うと、レジストパターンのな
い部分からメッキ層が成長する。メッキ層の成長は等方
的に進むため、初期は基板に対して垂直方向へ成長する
が、レジスト膜よりも厚くなるとレジストに乗り上げる
様に横方向へも成長するため、オーバーハング形状を容
易に形成することができる。このメッキ層をマスクとし
て所望の薄膜を成膜し、メッキ層をエッチング除去する
ことで前記薄膜のパターンを形成する。When a resist pattern is formed on a conductive substrate or a substrate on which a conductive thin film is formed and then electroplating is performed using the substrate as an electrode, a plating layer grows from a portion without the resist pattern. Since the growth of the plating layer proceeds isotropically, it grows in the vertical direction to the substrate at the beginning, but when it becomes thicker than the resist film, it grows in the lateral direction as it rides on the resist film, so that the overhang shape can be easily formed. Can be formed. A desired thin film is formed by using this plating layer as a mask, and the plating layer is removed by etching to form a pattern of the thin film.
【００１７】実際にメッキを行うと、レジスト上に乗り
上げるエッジ部ほど成長が速いため、レジスト上に乗り
上げた膜厚よりもオーバーハング部の幅の方が大きく、
リフトオフにとって理想的なオーバーハング形状を得る
ことができる。オーバーハング部の形状は、メッキ時の
電圧、電流と時間により制御できる。When plating is actually performed, since the edge portion that rides on the resist grows faster, the width of the overhang portion is larger than the film thickness that rides on the resist.
An overhang shape ideal for lift-off can be obtained. The shape of the overhang portion can be controlled by the voltage, current and time during plating.
【００１８】理想的なオーバーハング形状が作製できる
ため、パターニングする薄膜の膜厚の倍程度の膜厚のレ
ジストでも、オーバーハング部の下への回り込みが少な
く、バリのない薄膜パターンを容易に形成できる。Since an ideal overhang shape can be produced, even a resist having a film thickness that is about twice the film thickness of the thin film to be patterned has less wraparound under the overhang portion and can easily form a burr-free thin film pattern. it can.
【００１９】また、メッキ層にニッケル、クロム、銅な
どの電気メッキ可能な金属を用いることで成膜温度の高
い薄膜のパターニングが可能である。Further, by using an electroplatable metal such as nickel, chromium or copper for the plating layer, it is possible to pattern a thin film having a high film forming temperature.
【００２０】以上明らかなように、本発明によれば膜厚
の厚い薄膜や成膜温度の高い薄膜のリフトオフを容易に
実現し、微細な薄膜パターンを形成することができる。As is apparent from the above, according to the present invention, lift-off of a thin film having a large film thickness or a thin film having a high film forming temperature can be easily realized and a fine thin film pattern can be formed.
【００２１】[0021]
【実施例】以下、具体例について詳細を述べる。図１は
本発明におけるパターン形成方法を示す図である。EXAMPLES Hereinafter, specific examples will be described in detail. FIG. 1 is a diagram showing a pattern forming method according to the present invention.
【００２２】ａ）基板１としてマグネシアの単結晶を用
い、全面に導電性薄膜２としてクロム薄膜を約１５０ｎ
ｍ成膜し、この上にポジレジストを用いて膜厚５μｍの
レジストパターン３を形成した。A) A single crystal of magnesia is used as the substrate 1, and a chromium thin film is formed as a conductive thin film 2 on the entire surface by about 150 n.
Then, a positive resist was used to form a resist pattern 3 having a film thickness of 5 μm.
【００２３】ｂ）導電性薄膜２を電極として電気メッキ
を行いメッキ層４を形成した。表１に示す組成のメッキ
液を用い、陽極を銅電極、陰極を試料とし、印加電圧３
Ｖで１分間メッキを行った。このメッキ処理により膜厚
約８μｍの銅薄膜を形成し、レジスト３上に乗り上げた
オーバーハング部の幅が５μｍ程度の理想的なリフトオ
フ用マスクを得ることができた。B) Electroplating was performed using the conductive thin film 2 as an electrode to form a plated layer 4. Using the plating solution having the composition shown in Table 1, the anode was a copper electrode, the cathode was a sample, and the applied voltage was 3
Plated at V for 1 minute. By this plating treatment, a copper thin film having a film thickness of about 8 μm was formed, and an ideal lift-off mask having a width of the overhanging portion on the resist 3 of about 5 μm could be obtained.
【００２４】[0024]
【表１】 [Table 1]
【００２５】ｃ）レジスト３をアセトンで溶解除去し、
導電性薄膜２の露出した部分をクロムエッチング液で除
去した。C) The resist 3 is dissolved and removed with acetone,
The exposed portion of the conductive thin film 2 was removed with a chromium etching solution.
【００２６】ｄ）薄膜５として２μｍのチタン酸鉛系の
薄膜を表２の条件で成膜した。D) As the thin film 5, a 2 μm lead titanate-based thin film was formed under the conditions shown in Table 2.
【００２７】[0027]
【表２】 [Table 2]
【００２８】ｅ）塩化第二鉄水溶液によりメッキ層４お
よび導電性薄膜２をエッチング除去するとともに、メッ
キ層上４上の薄膜５ａを剥離し、薄膜パターン５ｂを形
成した。E) The plating layer 4 and the conductive thin film 2 were removed by etching with an aqueous ferric chloride solution, and the thin film 5a on the plating layer 4 was peeled off to form a thin film pattern 5b.
【００２９】薄膜５に用いた材料はペロブスカイト型の
結晶構造を有する強誘電体薄膜で、表２に示すような条
件でマグネシアの（１００）面上に成膜すると、ｃ軸配
向膜が得られる。さらにこの膜は分極処理を行わなくて
も基板に対して上方向に自発分極が揃っており、焦電型
の赤外線センサや圧電素子の材料として注目されてい
る。The material used for the thin film 5 is a ferroelectric thin film having a perovskite type crystal structure, and when formed on the (100) face of magnesia under the conditions shown in Table 2, a c-axis oriented film is obtained. . Furthermore, this film has spontaneous polarization aligned upward with respect to the substrate without polarization treatment, and is attracting attention as a material for pyroelectric infrared sensors and piezoelectric elements.
【００３０】一般的にペロブスカイト型の強誘電体材料
はエッチング処理が困難で、作製に６００℃以上の高温
が必要であり、機能デバイスへの応用には数ミクロンの
膜厚が必要である。従って、従来はメタルマスクによる
分離しか方法がなく、メタルマスクの精度、マスクと基
板の密着むらや熱膨張率の差によるパターンズレなど多
くの問題があり、ギャップ１００μｍ以下の微細なパタ
ーン加工ができなかった。Generally, a perovskite type ferroelectric material is difficult to etch, requires a high temperature of 600 ° C. or higher for fabrication, and requires a film thickness of several microns for application to a functional device. Therefore, conventionally, there is only a method of separating with a metal mask, and there are many problems such as precision of the metal mask, uneven contact between the mask and the substrate, and pattern deviation due to the difference in coefficient of thermal expansion. There wasn't.
【００３１】本実施例では、ギャップ２０μｍ、１００
μｍピッチのパターン形成に成功した。さらにメッキ層
４のオーバーハング形状を制御することで、より細かな
パターンの形成が可能である。In this embodiment, the gap is 20 μm, 100
Successful pattern formation with μm pitch. Further, by controlling the overhang shape of the plating layer 4, it is possible to form a finer pattern.
【００３２】[0032]
【発明の効果】以上のように、本発明はメッキ法で形成
したオーバーハング形状のメッキ層をマスクとしたリフ
トオフを行うことで、エッチングが難しい、膜厚が厚
い、成膜温度が高いなどの理由でパターンが形成できな
い薄膜において、微細なパターン形成を可能とする。As described above, according to the present invention, the lift-off is performed by using the overhang-shaped plating layer formed by the plating method as a mask, so that the etching is difficult, the film thickness is high, the film forming temperature is high, etc. A fine pattern can be formed in a thin film in which a pattern cannot be formed for the reason.
【００３３】基板上に導電性薄膜を設け、導電性薄膜の
露出部をエッチング除去した場合の例を示したが、導電
性薄膜をエッチングしない場合や、導電性を有する基板
上にメッキする場合でも同等の効果が得られる。An example in which a conductive thin film is provided on the substrate and the exposed portion of the conductive thin film is removed by etching has been shown. However, even when the conductive thin film is not etched or when plating is performed on a conductive substrate. The same effect can be obtained.
【００３４】メッキ層の材料としては銅以外にクロム、
ニッケル、鉛など多くの金属の可能性があり、パターニ
ングされる薄膜や、その成膜条件に合ったメッキ材料や
エッチング液を選択することで、チタン酸鉛系薄膜以外
の材料においても本発明による微細パターンの形成が可
能であることは言うまでもない。As the material for the plating layer, chromium is used in addition to copper.
There is a possibility of many metals such as nickel and lead. By selecting a thin film to be patterned, a plating material and an etching solution that match the film forming conditions, it is possible to apply the present invention to materials other than lead titanate thin films. It goes without saying that a fine pattern can be formed.
【図１】本発明の実施例の薄膜パターン形成法の概略図FIG. 1 is a schematic view of a thin film pattern forming method according to an embodiment of the present invention.
【図２】従来のリフトオフ法の概略図FIG. 2 is a schematic diagram of a conventional lift-off method.
１ 基板 ２ 導電性薄膜 ３ レジスト ４ メッキ層 ５ 薄膜 1 substrate 2 conductive thin film 3 resist 4 plating layer 5 thin film
フロントページの続き (72)発明者 藤井 覚 大阪府門真市大字門真1006番地 松下電器 産業株式会社内Front page continuation (72) Inventor Satoshi Fujii 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.
Claims (5)
ジストパターンを形成し、前記導電性薄膜を電極とした
電気メッキで前記レジストよりも厚いメッキ層を形成
後、前記レジストを除去し、前記メッキ層をマスクとし
て所望の薄膜を成膜し、前記メッキ層をエッチング除去
することで前記薄膜のうちメッキ層上の部分を剥離する
薄膜パターン形成方法。1. A conductive thin film is formed on a substrate, a resist pattern is formed on the conductive thin film, and a plating layer thicker than the resist is formed by electroplating using the conductive thin film as an electrode. A method for forming a thin film pattern, which comprises removing a desired thin film by using the plating layer as a mask and removing the plating layer by etching to remove a portion of the thin film on the plating layer.
し、前記基板を電極とした電気メッキで前記レジストよ
りも厚いメッキ層を形成後、前記レジストを除去し、前
記メッキ層をマスクとして所望の薄膜を成膜し、前記メ
ッキ層をエッチング除去することで前記薄膜のうちメッ
キ層上の部分を剥離する薄膜パターン形成方法。2. A resist pattern is formed on a conductive substrate, a plating layer thicker than the resist is formed by electroplating using the substrate as an electrode, the resist is removed, and the desired plating layer is used as a mask. A method of forming a thin film pattern, wherein a thin film is formed and the plating layer is removed by etching to remove a portion of the thin film on the plating layer.
エッチング除去してから所望の薄膜を成膜する請求項１
記載の薄膜パターン形成方法。3. A desired thin film is formed after etching the exposed portion of the conductive thin film after removing the resist.
A method for forming a thin film pattern as described.
る強誘電体である請求項１記載の薄膜パターン形成方
法。4. The method for forming a thin film pattern according to claim 1, wherein the thin film is a ferroelectric substance having a perovskite type crystal structure.
され、 a) 0.7≦x≦1 0.9≦x+y≦1 0.95≦z≦1 w＝0 b) x=1 y=0 0.45≦z＜1 z+w＝1 c) 0.83≦x≦1 x+y=1 0.5≦z＜1 0.96≦z+w≦1 のいずれかの組成を有する請求項４記載の薄膜パターン
形成方法。5. The thin film is represented by Pb x La y Ti z Zr w O 3, a) 0.7 ≦ x ≦ 1 0.9 ≦ x + y ≦ 1 0.95 ≦ z ≦ 1 w = 0 b) x = 1 y = 0 0.45 ≦ z <1 z + w = 1 c) 0.83 ≦ x ≦ 1 x + y = 1 0.5 ≦ z <1 0.96 ≦ z + w ≦ 1 The thin film pattern formation according to claim 4. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4770493A JPH06260478A (en) | 1993-03-09 | 1993-03-09 | Formation of thin film pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4770493A JPH06260478A (en) | 1993-03-09 | 1993-03-09 | Formation of thin film pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06260478A true JPH06260478A (en) | 1994-09-16 |
Family
ID=12782692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4770493A Pending JPH06260478A (en) | 1993-03-09 | 1993-03-09 | Formation of thin film pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06260478A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005235880A (en) * | 2004-02-18 | 2005-09-02 | Fuji Photo Film Co Ltd | Laminate structure and its manufacturing method |
| JP2005235878A (en) * | 2004-02-18 | 2005-09-02 | Fuji Photo Film Co Ltd | Laminate structure and its manufacturing method |
-
1993
- 1993-03-09 JP JP4770493A patent/JPH06260478A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005235880A (en) * | 2004-02-18 | 2005-09-02 | Fuji Photo Film Co Ltd | Laminate structure and its manufacturing method |
| JP2005235878A (en) * | 2004-02-18 | 2005-09-02 | Fuji Photo Film Co Ltd | Laminate structure and its manufacturing method |
| JP4516327B2 (en) * | 2004-02-18 | 2010-08-04 | 富士フイルム株式会社 | Manufacturing method of laminated structure |
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