JPH0828401B2 - Electric circuit member - Google Patents

Electric circuit member

Info

Publication number
JPH0828401B2
JPH0828401B2 JP62071979A JP7197987A JPH0828401B2 JP H0828401 B2 JPH0828401 B2 JP H0828401B2 JP 62071979 A JP62071979 A JP 62071979A JP 7197987 A JP7197987 A JP 7197987A JP H0828401 B2 JPH0828401 B2 JP H0828401B2
Authority
JP
Japan
Prior art keywords
metal
electric circuit
connection
circuit board
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62071979A
Other languages
Japanese (ja)
Other versions
JPS63237537A (en
Inventor
徹夫 吉沢
秀之 西田
昌明 今泉
安照 市田
正暉 小西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP62071979A priority Critical patent/JPH0828401B2/en
Priority to EP98102122A priority patent/EP0854506A3/en
Priority to EP88103400A priority patent/EP0284820A3/en
Publication of JPS63237537A publication Critical patent/JPS63237537A/en
Priority to US08/597,383 priority patent/US5967804A/en
Publication of JPH0828401B2 publication Critical patent/JPH0828401B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、電気回路部材に関する。TECHNICAL FIELD The present invention relates to an electric circuit member.

[従来技術] 従来、電気回路部品同士を電気的に接続して構成され
る電気回路部材に関する技術としては以下に述べる技術
が知られている。
[Prior Art] Conventionally, the following technology has been known as a technology relating to an electric circuit member configured by electrically connecting electric circuit components to each other.

ワイヤボンディング方法、 第13図及び第14図はワイヤボンディング方法によって
接続され、封止された半導体装置の代表例を示してお
り、以下、第13図及び第14図に基づきワイヤボンディン
グ方法を説明する。
Wire Bonding Method, FIGS. 13 and 14 show a typical example of a semiconductor device which is connected and sealed by the wire bonding method, and the wire bonding method will be described below with reference to FIGS. 13 and 14. .

この方法は、Agペースト3等を用いて半導体素子4を
素子搭載部2に固定支持し、次いで、半導体素子4の接
続部5と、リードフレーム1の所望の接続部6とを金等
の極細金属線7を用いて電気的に接続する方法である。
In this method, the semiconductor element 4 is fixedly supported on the element mounting portion 2 using Ag paste 3 or the like, and then the connecting portion 5 of the semiconductor element 4 and the desired connecting portion 6 of the lead frame 1 are made of a fine metal such as gold. This is a method of electrically connecting using the metal wire 7.

なお、接続後は、トランスファーモールド法等の方法
で樹脂8を用いて半導体素子4とリードフレーム1を封
止し、その後、樹脂封止部分から外に伸びたリードフレ
ーム1の不要部分を切断し、所望の形に曲げ半導体装置
9を作る。
After the connection, the semiconductor element 4 and the lead frame 1 are sealed with a resin 8 by a method such as a transfer molding method, and then an unnecessary portion of the lead frame 1 extending from the resin sealing portion is cut. The bent semiconductor device 9 is formed into a desired shape.

TAB(Tape Automated Bonding)法(例えば、特開
昭59-139636号公報) 第15図はTAB法により接続され封止された半導体装置
の代表例を示す。
TAB (Tape Automated Bonding) method (for example, JP-A-59-139636) FIG. 15 shows a typical example of a semiconductor device which is connected and sealed by the TAB method.

この方法は、テープキャリア方式による自動ボンディ
ング方法である。すなわち、第15図に基づいて説明する
と、キャリアフィルム基板16と半導体素子4とを位置決
めした後、キャリアフィルム基板16のインナーリード部
17と半導体素子4の接続部5とを熱圧着することにより
接続する方法である。接続後は、樹脂20乃至樹脂21で封
止し半導体装置9とする。
This method is an automatic bonding method using a tape carrier method. That is, referring to FIG. 15, after positioning the carrier film substrate 16 and the semiconductor element 4, the inner lead portion of the carrier film substrate 16 is positioned.
In this method, 17 and the connection portion 5 of the semiconductor element 4 are connected by thermocompression bonding. After the connection, the semiconductor device 9 is sealed with resin 20 to resin 21.

CCB(Controlled Collapase Bonding)法(例え
ば、特公昭42-2096号、特開昭60-57944号公報) 第16図はCCB法によって接続され封止された半導体装
置の代表例を示す。この方法を第16図に基づき説明す
る。なお、本方法はフリップチップボンディング法とも
言われている。
CCB (Controlled Collapase Bonding) method (for example, JP-B-42-2096 and JP-A-60-57944) FIG. 16 shows a typical example of a semiconductor device connected and sealed by the CCB method. This method will be described with reference to FIG. This method is also called a flip chip bonding method.

半導体素子4の接続部5に予め半田バンプ31を設け、
半田バンプ31が設けられた半導体素子4を、回路基板32
上に位置決めして搭載する。その後、半田を加熱溶解す
ることにより回路基板32とに半導体素子4とを接続さ
せ、フラックス洗浄後封止して半導体装置9を作る。
The solder bumps 31 are provided in advance on the connecting portions 5 of the semiconductor element 4,
The semiconductor element 4 provided with the solder bumps 31 is connected to the circuit board 32.
Position and mount on top. Thereafter, the semiconductor element 4 is connected to the circuit board 32 by heating and melting the solder, and the semiconductor device 9 is manufactured by sealing after flux cleaning.

第17及び第18図に示す方法 すなわち、第1の半導体素子4の接続部5以外の部分
にポリイミド等よりなる絶縁膜71を形成せしめ、接続部
5にはAu等よりなる金属材70を設け、次いで、金属材70
及び絶縁膜71の露出面73,72を平らにする。一方、第2
の半導体素子4′の接続部5′以外の部分にポリイミド
等よりなる絶縁膜71′を形成せしめ、接続部5′にはAu
等よりなる金属材70′を設け、次いで、金属材70′及び
絶縁膜71′の露出面73′,72′を平らにする。
17 and 18, that is, an insulating film 71 made of polyimide or the like is formed on a portion other than the connection portion 5 of the first semiconductor element 4, and a metal material 70 made of Au or the like is provided on the connection portion 5. , Then metal material 70
And the exposed surfaces 73, 72 of the insulating film 71 are flattened. Meanwhile, the second
An insulating film 71 'made of polyimide or the like is formed on a portion of the semiconductor element 4'other than the connecting portion 5', and Au is formed on the connecting portion 5 '.
And the like, and then the exposed surfaces 73 'and 72' of the metal material 70 'and the insulating film 71' are flattened.

しかる後、第18図に示すように第1の半導体素子4と
第2の半導体素子4′とを位置決めし、位置決め後、熱
圧着することにより第1の半導体素子4の接続部5と第
2の半導体素子4′の接続部5′を金属材70,70′を介
してて接続する。
Then, as shown in FIG. 18, the first semiconductor element 4 and the second semiconductor element 4 ′ are positioned, and after positioning, thermocompression bonding is performed to connect the first semiconductor element 4 and the second semiconductor element 4 ′ with the second semiconductor element 4. The connecting portion 5'of the semiconductor element 4'is connected through the metal members 70, 70 '.

第19図に示す方法 すなわち、第1の回路基材75と第2の回路基材75′の
間に、絶縁物質77中に導電粒子79を分散させた異方性導
電膜78を介在させ、第1の回路基材75と第2の回路基材
75′を位置決めしたのち、加圧もしくは、加圧・加熱
し、第1の回路基材75の接続部76と第2の回路基材75′
の接続部76′を接続する方法である。
The method shown in FIG. 19, that is, an anisotropic conductive film 78 in which conductive particles 79 are dispersed in an insulating material 77 is interposed between the first circuit substrate 75 and the second circuit substrate 75 ′, First circuit board 75 and second circuit board
After positioning 75 ', pressurization or pressurization / heating is performed to connect the connecting portion 76 of the first circuit board 75 and the second circuit board 75'.
This is a method of connecting the connection portion 76 'of.

第20図に示す方法 すなわち、第1の回路基材75と第2の回路基材75′の
間に、絶縁物質81中に一定方向にFe,Cu等の金属線82を
配したエラスチックコネクター83を介在させ、第1の回
路基材75と第2の回路基材75′を位置決めしたのち、加
圧し、第1の回路基材75の接続部76と第2の回路基材7
5′の接続部76′を接続する方法である。
20. That is, an elastic connector 83 in which a metal wire 82 of Fe, Cu or the like is arranged in a certain direction in an insulating substance 81 between a first circuit substrate 75 and a second circuit substrate 75 '. The first circuit board 75 and the second circuit board 75 'are positioned with the interposition of, and then pressure is applied to connect the first circuit board 75 to the connection part 76 of the first circuit board 75 and the second circuit board 7'.
This is a method of connecting the 5'connection portion 76 '.

[発明が解決しようとする問題点] ところで上記した従来のボンディング法には次のよう
な問題点がある。
[Problems to be Solved by the Invention] The conventional bonding method described above has the following problems.

ワイヤボンディング法 半導体素子4の接続部5を半導体素子4の内部にく
るように設計すると、極細金属線7は、その線径が極め
て小さいため、半導体素子4の外周縁部10あるいはリー
ドフレーム1の素子搭載部2の外周縁部11に接触し易く
なる。極細金属線7がこれら外周縁部10乃至11に接触す
ると短絡する。さらに、極細金属線7の長さを長くせざ
るを得ず、その長さを長くすると、トランスファーモー
ルド成形時に極細金属線7が変形しやすくなる。
Wire Bonding Method When the connecting portion 5 of the semiconductor element 4 is designed to be inside the semiconductor element 4, the wire diameter of the ultrafine metal wire 7 is extremely small, so that the outer peripheral edge portion 10 of the semiconductor element 4 or the lead frame 1 is It becomes easy to contact the outer peripheral edge portion 11 of the element mounting portion 2. When the ultrafine metal wire 7 contacts these outer peripheral edge portions 10 to 11, a short circuit occurs. Further, the length of the ultrafine metal wire 7 must be increased, and if the length is increased, the ultrafine metal wire 7 is easily deformed during transfer molding.

従って、半導体素子4の接続部5は半導体素子4上の
周辺に配置する必要が生じ、回路設計上の制限を受けざ
るを得なくなる。
Therefore, the connecting portion 5 of the semiconductor element 4 needs to be arranged on the periphery of the semiconductor element 4, and the circuit design must be restricted.

ワイヤボンディング法においては、隣接する極細金
属線7同士の接触等を避けるためには半導極細金属線7
同士の接触等を避けるためには半導体素子4上の接続部
5のピッチ寸法(隣接する接続部の中心間の距離)とし
てある程度の間隔をとらざるを得ない。従って、半導体
素子4の大きさが決まれば必然的に接続部5の最大数が
決まる。しかるに、ワイヤボンディング法では、このピ
ッチ寸法が通常0.2mm程度と大きいので、接続部5の数
は少なくせざるを得なくなる。
In the wire bonding method, in order to avoid contact between adjacent ultrafine metal wires 7, the semiconductive ultrafine metal wires 7
In order to avoid mutual contact or the like, it is inevitable that the pitch of the connecting portions 5 on the semiconductor element 4 (distance between centers of adjacent connecting portions) has a certain distance. Therefore, if the size of the semiconductor element 4 is determined, the maximum number of the connecting portions 5 is inevitably determined. However, in the wire bonding method, since the pitch dimension is usually as large as about 0.2 mm, the number of connecting portions 5 must be reduced.

半導体素子4上の接続部5から測った極細金属線7
の高さhは通常0.2〜0.4mmであるが、0.2mm以下にし薄
型化することは比較的困難であるので薄型化を図れな
い。
Ultrafine metal wire 7 measured from the connection part 5 on the semiconductor element 4
The height h is usually 0.2 to 0.4 mm, but it is relatively difficult to reduce the thickness to 0.2 mm or less, so that the thickness cannot be reduced.

ワイヤボンディング作業に時間がかかる。特に接続
点数が多くなるとボンディング時間が長くなり生産効率
が悪くなる。
Wire bonding work takes time. Particularly, if the number of connection points is large, the bonding time becomes long and the production efficiency deteriorates.

何らかの要因でトランスファーモールド条件範囲を
越すと、極細金属線7が変形したり最悪の場合には切断
したりする。
If the transfer mold condition range is exceeded for some reason, the ultrafine metal wire 7 is deformed or, in the worst case, cuts.

また半導体素子4上の接続部5においては、極細金属
線7と合金化されないAlが露出しているじる。
Further, in the connection portion 5 on the semiconductor element 4, Al that is not alloyed with the ultrafine metal wire 7 is exposed.

TAB法 半導体素子4の接続部5を半導体素子4の内側にく
るように設計すると、キャリアフィルム基板16のインナ
ーリード部17の長さlが長くなるため、インナーリード
部17が変形し易くなりインナーリード部を所望の接続部
5に接続できなかったり、インナーリード部17が半導体
素子4の接続部5以外の部分に接触したりする。これを
避けるためには半導体素子4の接続部5を半導体素子4
上の周辺に持ってくる必要が生じ、設計上の制限を受け
る。
TAB method If the connection portion 5 of the semiconductor element 4 is designed to be inside the semiconductor element 4, the length 1 of the inner lead portion 17 of the carrier film substrate 16 becomes long, so that the inner lead portion 17 is easily deformed. The lead portion may not be connected to the desired connecting portion 5, or the inner lead portion 17 may contact a portion of the semiconductor element 4 other than the connecting portion 5. In order to avoid this, the connecting portion 5 of the semiconductor element 4 is connected to the semiconductor element 4
It is necessary to bring it around the upper part, and there is a design limitation.

TAB法においても、半導体素子4上の接続部のピッ
チ寸法は0.09〜0.15mm程度とる必要があり、従ってワイ
ヤボンディング法の問題点で述べたと同様に、接続部
数を増加させることはむずかしくなる。
Also in the TAB method, the pitch dimension of the connection portions on the semiconductor element 4 needs to be set to about 0.09 to 0.15 mm. Therefore, similarly to the problem of the wire bonding method, it is difficult to increase the number of connection portions.

キャリアフィルム基板16のインナーリード部17が半
導体素子4の接続部5以外の部分に接触しないようにさ
せるため所望のインナーリード部17の接続形状が要求さ
れコスト高となる。
In order to prevent the inner lead portion 17 of the carrier film substrate 16 from coming into contact with the portion other than the connecting portion 5 of the semiconductor element 4, a desired connection shape of the inner lead portion 17 is required, which results in high cost.

半導体素子4の接続部5とインナーリード部17とを
接続するためには、半導体素子4の接続部5またはイン
ナーリード部17の接続部に金バンプをつけなければなら
ずコスト高になる。
In order to connect the connection portion 5 of the semiconductor element 4 and the inner lead portion 17, it is necessary to attach a gold bump to the connection portion 5 of the semiconductor element 4 or the connection portion of the inner lead portion 17, resulting in a high cost.

CCB法 半導体素子4の接続部5に半田バンプ31を形成させ
なければならないためコスト高になる。
CCB method Since the solder bumps 31 must be formed on the connecting portions 5 of the semiconductor element 4, the cost becomes high.

バンプの半田量が多いと隣接する半田バンプとブリ
ッジ(隣接する半田バンプ同士が接触する現象)が生
じ、逆に少いと半導体素子4の接続部5と基板32の接続
部33が接続しなくなり電気的導通がとれなくなる。すな
わち、接続の信頼性が低くなる。さらに、半田量、接続
の半田形状が接続の信頼性に影響する(ろう接技術研究
会技術資料、No.017-′84、ろう接技術研究会発行)と
いう問題がある。
If the amount of solder on the bump is large, a bridge (a phenomenon in which adjacent solder bumps contact each other) occurs between adjacent solder bumps. Conversely, if the amount of solder is small, the connection portion 5 of the semiconductor element 4 and the connection portion 33 of the substrate 32 are not connected and electrical The electrical continuity cannot be achieved. That is, the reliability of the connection is reduced. Furthermore, there is a problem that the amount of solder and the solder shape of the connection affect the reliability of the connection (Brazing Technology Study Group Technical Material, No.017-'84, issued by the Brazing Technology Study Group).

このように、半田バンプの量の多少が接続の信頼性に
影響するため半田バンプ31の量のコントロールが必要と
されている。
As described above, the amount of solder bumps 31 affects the reliability of the connection, so that it is necessary to control the amount of solder bumps 31.

半田バンプ31が半導体素子4の内側に存在すると接
続が良好に行なわれたか否かの目視検査がむずかしくな
る。
If the solder bumps 31 are present inside the semiconductor element 4, it becomes difficult to perform a visual inspection as to whether or not the connection is made well.

半導体素子の放熱特性が悪い(参考資料;Electroni
c Packaging Technology 1987、1(Vol.3,No.1)p.66
〜71 NIKKEI MICRODEVICES,1986.5月.p.97〜108)た
め、放熱特性を良好たらしめるための多大な工夫が必要
とされる。
Poor heat dissipation characteristics of semiconductor devices (Reference: Electroni
c Packaging Technology 1987, 1 (Vol.3, No.1) p.66
〜71 NIKKEI MICRODEVICES, May 1986.5.p.97〜108), so a great deal of work is needed to achieve good heat dissipation characteristics.

第17図及び第18図に示す技術 絶縁膜71の露出面72と金属材70の露出面73、さらに
絶縁膜71′の露出面72′と金属材70′の露出面73′を平
らにしなければならず、そのための工数が増し、コスト
高になる。
The technique shown in FIGS. 17 and 18 The exposed surface 72 of the insulating film 71 and the exposed surface 73 of the metal material 70, and the exposed surface 72 'of the insulating film 71' and the exposed surface 73 'of the metal material 70' must be flattened. It is necessary to increase the number of man-hours and the cost for that.

絶縁膜71の露出面72と金属材70の露出面73あるいは
絶縁膜71′の露出面72′と金属材70′の露出面73′に凹
凸があると金属材70と金属材70′とが接続しなくなり、
信頼性が低下する。
When the exposed surface 72 of the insulating film 71 and the exposed surface 73 of the metal material 70 or the exposed surface 72 'of the insulating film 71' and the exposed surface 73 'of the metal material 70' have irregularities, the metal material 70 and the metal material 70 'are separated from each other. No connection,
Reliability is reduced.

第19図に示す技術 位置決め後に、接続部76と接続部76′とを加圧して
接続する際に、圧力が一定にはかかりにくいため、接続
状態にバラツキが生じ、その結果、接続部における接触
抵抗値のバラツキが大きくなる。そのため、接続の信頼
性が乏しくなる。また、多量の電流を流すと、発熱等の
現象が生じるので、多量の電流を流したい場合には不向
きである。
Technology shown in Fig. 19 When pressure is applied between the connection part 76 and the connection part 76 'after positioning, pressure is less likely to be applied constantly, resulting in variations in the connection state, resulting in contact at the connection part. The variation in resistance value increases. Therefore, the reliability of the connection becomes poor. Further, when a large amount of current is passed, a phenomenon such as heat generation occurs, which is not suitable when a large amount of current is desired to be passed.

圧力が一定にかけられたとしても、異方性導電膜78
の導電粒子79の配列により抵抗値のバラツキが大きくな
る。そのため、接続の信頼性に乏しくなる。また、大電
流容量が要求される接続には不向きである。
Even if a constant pressure is applied, the anisotropic conductive film 78
Due to the arrangement of the conductive particles 79, the variation of the resistance value becomes large. Therefore, the reliability of the connection becomes poor. Moreover, it is not suitable for a connection that requires a large current capacity.

隣接する接続部のピッチ(接続部に隣接する接続部
中心間の距離)を狭くすると隣接する接続部の間の抵抗
値が小さくなることから高密度な接続には不向きであ
る。
If the pitch of the adjacent connecting portions (the distance between the centers of the connecting portions adjacent to the connecting portions) is narrowed, the resistance value between the adjacent connecting portions becomes small, which is not suitable for high-density connection.

回路基材75,75′の接続部76、76′の出っ張り量h1
のバラツキにより抵抗値が変化するため、h1バラツキ量
を正確に押さえることが必要である。
The amount of protrusion h1 of the connection parts 76, 76 'of the circuit board 75, 75'
Since the resistance value changes due to the variation of, it is necessary to suppress the amount of variation of h1 accurately.

さらに異方導電膜を、半導体素子と回路基材の接
続、また、第1の半導体素子と第2の半導体素子との接
続に使用した場合、上記〜の欠点の他、半導体素子
の接続部にバンプを設けなければならなくなり、コスト
高になるという欠点が生じる。
Furthermore, when the anisotropic conductive film is used for connecting the semiconductor element and the circuit substrate, and for connecting the first semiconductor element and the second semiconductor element, in addition to the above-mentioned disadvantages, Since bumps have to be provided, there is a drawback that the cost becomes high.

第20図に示す技術 加圧が必要であり、加圧治具が必要となる。 Technology shown in Fig. 20 Pressurization is required, and a pressure jig is required.

エラスチックコネクタ83の金属線82と第1の回路基
材75の接続部76また、第2の回路基材75′の接続部76′
との接触抵抗は加圧力及び表面状態により変化するため
接続の信頼性は乏しい。
The connecting portion 76 between the metal wire 82 of the elastic connector 83 and the first circuit substrate 75, and the connecting portion 76 'of the second circuit substrate 75'.
The contact resistance with and changes depending on the pressing force and the surface condition, so the reliability of the connection is poor.

エラスチックコネクタ83の金属線82は剛体であるた
め、加圧力が大であるとエラスチックコネクタ83、第1
の回路基材75、第2の回路基材75′の表面が破損する可
能性が大きい。また、加圧力が小であると、接続の信頼
性が乏しくなる。
Since the metal wire 82 of the elastic connector 83 is a rigid body, if the pressing force is large, the elastic connector 83, the first
There is a high possibility that the surfaces of the circuit base material 75 and the second circuit base material 75 'will be damaged. Further, if the applied pressure is small, the reliability of the connection becomes poor.

さらに、回路基材75,75′の接続部76,76′の出っ張
り量h2、またエラスチックコネクタ83の金属線82の出っ
張り量h3とそのバラツキが抵抗値変化及び破損に影響を
及ぼすので、バラツキを少なくする工夫が必要とされ
る。
Further, the protrusion amount h2 of the connecting portions 76, 76 'of the circuit board 75, 75', and the protrusion amount h3 of the metal wire 82 of the elastic connector 83 and its variation affect the resistance value change and damage. A device to reduce the number is required.

さらに、エラスチックコネクターを半導体素子と回
路基材の接続、また、第1の半導体素子と第2の半導体
素子との接続に使用した場合、〜と同様な欠点を生
ずる。
Further, when the elastic connector is used for connecting the semiconductor element and the circuit substrate, and for connecting the first semiconductor element and the second semiconductor element, the same drawbacks as the above occur.

本発明は、以上のような問題点をことごとく解決し、
高密度で高信頼性でしかも、低コストの新電気回路部材
を提案するものであり、従来の接続方式を置き換え得る
ことはもちろん、高密度多点接続が得られ、熱等諸特性
を向上させ得るものである。
The present invention solves all the above problems,
It proposes a new electrical circuit member with high density, high reliability, and low cost, which can replace conventional connection methods and can achieve high-density multi-point connection and improve various characteristics such as heat. I will get it.

[問題点を解決するための手段] 本発明は、接続部を有する第1の電気回路部品と、接
続部を有する第2の電気回路部品とを、両電気回路部品
を電気的に接続するための電気的接続部材を両者の間に
介在させて、両電気回路部品の接続部において接続して
構成される電気回路部材において、 該電気的接続部材は、金属又は合金よりなる複数の金
属部材を、該金属部材の一端を第1の電気部品側に露出
させて、一方、該金属部材の他端を該第2の電気回路部
品側に露出させて、それぞれの金属部材同士が電気的に
絶縁されるように、絶縁体中に埋設して構成されてお
り、かつ、該絶縁体には所望形状をした金属体又は無機
材料体の一方又は両方が埋設されており、 第1の電気回路部品の接続部と第1の電気回路部品側
に露出した金属部材の一端とを合金化することにより接
続し、かつ、第2の電気回路部品の接続部と第2の電気
回路部品側に露出した金属部材の一端とを合金化するこ
とにより接続したことを特徴とする電気回路部材にその
要旨を有する。
[Means for Solving the Problems] The present invention electrically connects a first electric circuit component having a connecting portion and a second electric circuit component having a connecting portion to both electric circuit components. In the electric circuit member constituted by interposing the electric connecting member of (1) between the two and connecting at the connecting portion of both electric circuit components, the electric connecting member includes a plurality of metal members made of metal or alloy. , Exposing one end of the metal member to the first electric component side and exposing the other end of the metal member to the second electric circuit component side so that the respective metal members are electrically insulated from each other. So as to be embedded in an insulator, and one or both of a metal body and an inorganic material body having a desired shape are embedded in the insulator, the first electric circuit component Of the metal member exposed at the connection part of the first electric circuit component side And are connected by alloying, and the connecting portion of the second electric circuit component and one end of the metal member exposed on the second electric circuit component side are connected by alloying. It has the gist of electric circuit members.

本発明における電気回路部品としては、例えば、半導
体素子、樹脂回路基板、セラミック基板、金属基板等の
回路基板(以下単に回路基板ということがある)、リー
ドフレーム等があげられる。すなわち、第1の電気回路
部品としてこれらの中のいずれかの部品を用い、第2の
電気回路部品としてこれらの中のいずれかの部品を用い
ればよい。
Examples of the electric circuit component in the present invention include a circuit board such as a semiconductor element, a resin circuit board, a ceramic board, a metal board (hereinafter may be simply referred to as a circuit board), and a lead frame. That is, any of these components may be used as the first electrical circuit component, and any of these components may be used as the second electrical circuit component.

電気回路部品として接続部を有する部品が本発明の対
象となる。接続部の数は問わないが、接続部の数が多け
れば多いほど本発明の効果が顕著となる。
A component having a connecting portion as an electric circuit component is an object of the present invention. The number of connecting portions is not limited, but the effect of the present invention becomes more remarkable as the number of connecting portions increases.

また、接続部の存在位置も問わないが、電気回路部品
の内部に存在するほど本発明の効果が顕著となる。
Further, the location of the connection portion does not matter, but the effect of the present invention becomes more remarkable as the location inside the electric circuit component.

本発明では第1の電気回路部品と第2の電気回路部品
とを電気的接続部材を用いて接続する。
In the present invention, the first electric circuit component and the second electric circuit component are connected using the electric connection member.

本発明に係る電気的接続部材は、絶縁体中に複数の金
属部材を埋設して構成されている。金属部材同士はそれ
ぞれ絶縁体により絶縁されており、また、金属部材の一
端は第1の電気回路部品側に露出しており、他の一端は
第2の電気回路部品側に露出している。さらに、該絶縁
体には所望形状をした金属体又は無機材料体の一方又は
両方が埋設されている。
The electrical connection member according to the present invention is configured by embedding a plurality of metal members in an insulator. The metal members are insulated from each other by an insulator, one end of the metal member is exposed to the first electric circuit component side, and the other end is exposed to the second electric circuit component side. Further, one or both of a metal body and an inorganic material body having a desired shape are embedded in the insulator.

ここで、金属部材の材質としては、金が好ましいが、
金以外の任意の金属あるいは合金を使用することもでき
る。例えば、Cu,Al,Sn,Pb-Sn等の金属あるいは合金があ
げられる。
Here, gold is preferable as the material of the metal member,
Any metal or alloy other than gold can also be used. For example, a metal or alloy such as Cu, Al, Sn, Pb-Sn can be used.

さらに、金属部材の断面は、円形、四角形その他任意
の形状とすることができる。
Furthermore, the cross section of the metal member can be circular, square, or any other shape.

また、金属部材の太さは特に限定されない。電気回路
部品の接続部のピッチを考慮して、例えば20μmφ以上
あるいは20μmφ以下にしてもよい。
Further, the thickness of the metal member is not particularly limited. The pitch may be 20 μmφ or more or 20 μmφ or less in consideration of the pitch of the connection portion of the electric circuit component.

なお、金属部材の露出部は絶縁体と同一面としてもよ
いし、また、絶縁体の面から突出させてもよい。この突
出は片面のみでもよいし両面でもよい。さらに突出させ
た場合はバンプ状にしてもよい。
The exposed portion of the metal member may be flush with the insulator, or may be protruded from the insulator surface. This protrusion may be on one side or both sides. If it is further projected, it may be formed into a bump shape.

また、金属部材の間隔は、電気回路部品の接続部同士
の間隔と同一間隔としてもよいし、それより狭い間隔と
してもよい。狭い間隔とした場合には電気回路部品と電
気的接続部材との位置決めを要することなく、電気回路
部品と電気的接続部材とを接続することが可能となる。
The spacing between the metal members may be the same as the spacing between the connecting portions of the electric circuit component, or may be narrower than that. When the distance is narrow, the electric circuit component and the electric connecting member can be connected without positioning the electric circuit component and the electric connecting member.

また、金属部材は絶縁体中に垂直に配する必要はな
く、第1の電気回路部品側から第2の電気回路部品側に
向かって斜行していてもよい。
Further, the metal member does not need to be vertically arranged in the insulator, and may be slanted from the first electric circuit component side toward the second electric circuit component side.

さらに電気的接続部材は、1層あるいは2層以上の多
層からなるものでもよい。
Further, the electrical connecting member may be composed of one layer or a multilayer of two or more layers.

本発明においては、絶縁体には所望形状をした金属体
又は無機材料体の一方又は両方が埋設されている。
In the present invention, one or both of a metal body and an inorganic material body having a desired shape are embedded in the insulator.

ここで、所望形状をした金属体又は無機材料体として
は、例えば、板状体、各種断面形状をした棒状体、球体
等があげられる。
Here, examples of the metal body or the inorganic material body having a desired shape include a plate body, a rod body having various cross-sectional shapes, and a sphere.

また、金属体の材質としては、例えば、Ag,Cu,Au,Al,
Be,Ca,Mg,Mo,Ni,Si,W,Fe,Sn,Zn等、あるいはこれらの合
金があげられる。
Further, as the material of the metal body, for example, Ag, Cu, Au, Al,
Be, Ca, Mg, Mo, Ni, Si, W, Fe, Sn, Zn and the like, or alloys of these.

また、無機材料体の材質としては、例えば、SiC,BeO,
B4C,TaC,TiB2,CrB2,TiN,BP,BN,AlN,Si3N4,SiO2,B
2O3,Al2O3,Na2O,K2O,CaO,ZnO,BaO,PbO,Sb2O3,As
2O3,La2O3,ZnO2,P2O5,TiO2,MgO,Ta2O5等のセラミッ
ク、ダイヤモンド、C,B、ガラス等のものがあげられ
る。これらの無機材料の1種又は2種以上を使用すれば
よい。
Further, as the material of the inorganic material body, for example, SiC, BeO,
B 4 C, TaC, TiB 2 , CrB 2 , TiN, BP, BN, AlN, Si 3 N 4 , SiO 2 , B
2 O 3 , Al 2 O 3 , Na 2 O, K 2 O, CaO, ZnO, BaO, PbO, Sb 2 O 3 , As
Examples include ceramics such as 2 O 3 , La 2 O 3 , ZnO 2 , P 2 O 5 , TiO 2 , MgO and Ta 2 O 5 , diamonds, C, B and glass. One kind or two or more kinds of these inorganic materials may be used.

金属体及び無機材料体は1種又は2種以上を使用すれ
ばよい。
The metal body and the inorganic material body may be used alone or in combination of two or more.

埋設する金属体、無機材料体の大きさ、形状、また、
絶縁体中における分散位置、数量は、金属体、無機材料
体のために、絶縁体中に埋設されている金属部材同士が
接触・短絡したり、切断したりしない範囲内ならば任意
である。また、金属部材間の全てに金属体、無機材料体
が存在する必要はなく、存在している部分と存在してい
ない部分があってもよい。また、金属体、無機材料体は
絶縁体の外部に露出してもよいし、露出しなくともよ
い。また、金属体、無機材料体同士は接触してもよい
し、接触していなくともよい。
The size and shape of the embedded metal body and inorganic material body,
The distribution position and number in the insulator are arbitrary as long as the metal members and the inorganic material bodies do not contact, short-circuit, or cut the metal members embedded in the insulator. Further, it is not necessary that the metal body or the inorganic material body be present between all the metal members, and some portions may be present and some may not be present. The metal body and the inorganic material body may or may not be exposed to the outside of the insulator. In addition, the metal body and the inorganic material body may or may not be in contact with each other.

電気的接続部材の絶縁体は絶縁性物質ならば特に限定
されない。例えば絶縁性の樹脂を用いればよい。さら
に、樹脂を用いる場合には樹脂の種類も問わない。熱硬
化性樹脂、熱可塑性樹脂のいずれでもよい。例えば、ポ
リイミド樹脂、ポリフェニレンサルファイド樹脂、ポリ
エーテルサルフォン樹脂、ポリエーテルイミド樹脂、ポ
リサルフォン樹脂、シリコーン樹脂、フッ素樹脂、ポリ
カーボネート樹脂、ポリジフェニールエーテル樹脂、ポ
リベンジルイミダゾール樹脂、フェノール樹脂、尿素樹
脂、メラミン樹脂、アルキッド樹脂、エポキシ樹脂、ポ
リアミドイミド樹脂、ポリプロプレン樹脂、ポリ塩化ビ
ニル樹脂、ポリスチレン樹脂その他の樹脂を使用するこ
とができる。
The insulator of the electrical connection member is not particularly limited as long as it is an insulating substance. For example, an insulating resin may be used. Furthermore, when a resin is used, the type of resin does not matter. Either a thermosetting resin or a thermoplastic resin may be used. For example, polyimide resin, polyphenylene sulfide resin, polyether sulfone resin, polyether imide resin, polysulfone resin, silicone resin, fluororesin, polycarbonate resin, polydiphenyl ether resin, polybenzyl imidazole resin, phenol resin, urea resin, melamine resin , Alkyd resin, epoxy resin, polyamideimide resin, polypropylene resin, polyvinyl chloride resin, polystyrene resin and other resins can be used.

なお、これらの樹脂の中から、熱伝導性のよい樹脂を
使用すれば、半導体素子が熱を持ってもその熱を樹脂を
介して放熱することができるのでより好ましい。さら
に、樹脂として、回路基板と同じかあるいは同程度の熱
膨張率を有するものを選択すれば、熱膨張・熱収縮に基
づく、装置の信頼性の低下を一層防止することが可能と
なる。
It is more preferable to use a resin having good thermal conductivity from these resins, because even if the semiconductor element has heat, the heat can be radiated through the resin. Furthermore, if a resin having the same or similar coefficient of thermal expansion as the circuit board is selected as the resin, it is possible to further prevent the deterioration of the reliability of the device due to the thermal expansion / contraction.

本発明ではさらに、第1の電気回路部品の接続部と第
1の電気回路部品側に露出した電気接続部材の金属部材
の一端とを合金化することにより接続し、かつ、第2の
電気回路部品の接続部と第2の電気回路部品側に露出し
た電気接続部材の金属部材の一端とを合金化することに
より接続する。すなわち、本発明では、第1の電気回路
部品と第2の電気回路部品との両方ともに合金化する。
In the present invention, further, the connection portion of the first electric circuit component and the one end of the metal member of the electric connection member exposed on the first electric circuit component side are connected by alloying, and the second electric circuit is connected. The connection portion of the component and the one end of the metal member of the electric connection member exposed on the second electric circuit component side are connected by alloying. That is, in the present invention, both the first electric circuit component and the second electric circuit component are alloyed.

なお、合金化方法としては、例えば、それぞれ対応す
る接続部を接触させた後、適宜の温度において加熱すれ
ばよい。加熱により、接続部において原子の拡散等が起
こり、接続部表面に固溶体あるいは金属間化合物よりな
る層が形成され、接続部同士が合金化される。なお、電
気的接続部材の金属部材にAuを使用し、電気回路部品の
接続部にAlを使用した場合には、200〜350℃の加熱温度
が好ましい。
As an alloying method, for example, heating may be performed at an appropriate temperature after the corresponding connecting portions are brought into contact with each other. The heating causes diffusion of atoms and the like in the connection portion, a layer made of a solid solution or an intermetallic compound is formed on the surface of the connection portion, and the connection portions are alloyed. When Au is used for the metal member of the electrical connecting member and Al is used for the connecting portion of the electric circuit component, the heating temperature of 200 to 350 ° C. is preferable.

[作用] 本発明では、上述した電気的接続部材を使用している
ので、電気回路部品の接続部を内部に配置することも可
能となり、接続部の数を増加させることができ、ひいて
は高密度化が可能となる。
[Operation] In the present invention, since the above-described electrical connection member is used, it is possible to dispose the connection portion of the electric circuit component inside, so that the number of connection portions can be increased, which in turn increases the density. Can be realized.

また、電気的接続部材は薄くすることが可能であり、
この面からも薄型化が可能となる。
Also, the electrical connection member can be thin,
From this aspect, it is possible to reduce the thickness.

さらに、電気的接続部材に使用する金属部材の量は少
ないため、たとえ、高価な金を金属部材として使用した
としてもコストが安いものとなる。
Furthermore, since the amount of the metal member used for the electrical connection member is small, the cost is low even if expensive gold is used as the metal member.

本発明では、電気回路部品の両方が、電気接続部材を
介して合金化されており電気回路部品同士が強固(強度
的に強く)かつ確実に接続されるので、機械的に強く、
不良率の極めて低い電気回路部材を得ることができる。
In the present invention, both of the electric circuit parts are alloyed via the electric connecting member and the electric circuit parts are firmly (strongly strong) and surely connected to each other, so that they are mechanically strong,
An electric circuit member having an extremely low defect rate can be obtained.

また、電気回路部品の両方を、電気的接続部材を介し
て合金化するので、電気回路部材の作成工程中及び作成
後において、治具等を使用して電気回路部品を保持する
必要がなく、電気回路部材の作成及び作成後の管理が容
易である。
Further, since both of the electric circuit parts are alloyed via the electric connection member, it is not necessary to hold the electric circuit parts by using a jig or the like during and after the process of forming the electric circuit member, It is easy to create an electric circuit member and manage it after creation.

電気回路部品の両方が、電気的接続部材を介して合金
化されているので、電気回路部品相互の接触抵抗が一方
のみを合金化した場合に比べてより小さくなる。
Since both of the electric circuit components are alloyed via the electrical connecting member, the contact resistance between the electric circuit components is smaller than that in the case where only one of them is alloyed.

本発明においては、電気的接続部材の絶縁体中に所望
形状をした金属体又は無機材料体の一方又は両方が埋設
されているので、第1の電気回路部品から第2の電気回
路部品への熱伝導性、また、第2の電気回路部品から第
1の電気回路部品への熱伝導性が良くなる。つまり、電
気的接続部材の熱伝導性が良好であり、仮に、第1の電
気回路部品として発熱量の大きな電気回路部品を使用
し、第2の電気回路部品として熱影響の少ない電気回路
部品を選択したとすると、第1の電気回路部品から発熱
した熱は、電気的接続部材を介して第2の電気回路部品
へといち早く伝導され、この熱は第2の電気回路部品か
ら放熱される。従って、放熱特性の良好な電気回路部材
を得ることが可能となる。
In the present invention, one or both of the metal body and the inorganic material body having a desired shape are embedded in the insulator of the electrical connection member, so that the first electrical circuit component to the second electrical circuit component is The thermal conductivity and the thermal conductivity from the second electric circuit component to the first electric circuit component are improved. That is, the electrical conductivity of the electrical connecting member is good, and an electric circuit component that generates a large amount of heat is used as the first electric circuit component, and an electric circuit component that is less affected by heat is used as the second electric circuit component. If selected, the heat generated from the first electric circuit component is quickly conducted to the second electric circuit component via the electrical connection member, and this heat is radiated from the second electric circuit component. Therefore, it becomes possible to obtain an electric circuit member having excellent heat dissipation characteristics.

なお、電気的接続部材の絶縁体中に電気回路部品の熱
膨張係数に近い無機材料体を埋設すると、電気的接続部
材の絶縁体の熱膨張係数が電気回路部品の熱膨張係数に
近づき、熱が加わった場合に生ずることのある絶縁体、
金属部材の割れ、あるいは、電気回路部品の特性の変化
という、半導体装置の信頼性を損なう現象を防止でき、
信頼性の良好な半導体が得られる。
When an inorganic material body having a thermal expansion coefficient close to that of the electric circuit component is embedded in the insulator of the electrical connecting member, the thermal expansion coefficient of the insulator of the electrical connecting member approaches the thermal expansion coefficient of the electrical circuit component, Insulation that may occur when is added,
It is possible to prevent the phenomenon that the reliability of the semiconductor device is impaired, such as the crack of the metal member or the change of the characteristics of the electric circuit parts,
A highly reliable semiconductor can be obtained.

また、本発明は、第1の電気回路部品と第2の電気回
路部品との熱膨張係数の差が大きい場合に顕著な効果が
得られる。
Further, the present invention has a remarkable effect when the difference in the coefficient of thermal expansion between the first electric circuit component and the second electric circuit component is large.

さらに、絶縁体中に金属体を埋設すると、電気回路部
品から外界に出る電磁気ノイズを減少せしめることがで
き、また、外界から電気回路部品へ入るノイズを減少せ
しめることができる。
Further, by embedding a metal body in the insulator, it is possible to reduce electromagnetic noise emitted from the electric circuit component to the outside world and reduce noise entering the electric circuit component from the outside world.

[実施例] (第1実施例) 本発明の第1実施例を第1図及び第2図に基づいて説
明する。
[Embodiment] (First Embodiment) A first embodiment of the present invention will be described with reference to FIGS. 1 and 2.

本実施例では、接続部102を有する第1の電気回路部
品である回路基板101と、接続部105を有する第2の電気
回路部品である回路基板104とを、両回路基板101,104を
電気的に接続するための電気的接続部材125を両者の間
に介在させて、両回路基板101,104の接続部102,105にお
いて接続して構成される電気回路部材において、 該電気的接続部材125は、金属又は合金よりなる複数
の金属部材107を、それぞれの金属部材107同士を電気的
に絶縁し、かつ、該金属部材107の一端を第1の回路基
板101側に露出させて、一方、該金属部材107の他端を該
第2の回路基板104側に露出させて、絶縁体111中に埋設
されて構成されており、かつ、絶縁体111には所望形状
をした金属体又は無機材料体の一方又は両方が埋設され
ており、 第1の回路基板101の接続部102と第1の回路基板101
側に露出した金属部材107の一端とを合金化することに
より接続し、かつ、第2の回路基板104の接続部105と第
2の回路基板104側に露出した金属部材107の一端とを合
金化することにより接続してある。
In this embodiment, a circuit board 101, which is a first electric circuit component having a connecting portion 102, and a circuit board 104, which is a second electric circuit component having a connecting portion 105, are electrically connected to each other. In an electric circuit member configured by interposing an electric connecting member 125 for connection between the two, and connecting at the connecting portions 102, 105 of both circuit boards 101, 104, the electric connecting member 125 is made of metal or alloy. The plurality of metal members 107 are electrically insulated from each other, and one end of the metal members 107 is exposed to the first circuit board 101 side, while the other metal members 107 are The end is exposed to the side of the second circuit board 104 and is embedded in the insulator 111, and the insulator 111 is provided with one or both of a metal body or an inorganic material body having a desired shape. The connection portion 102 of the first circuit board 101 and the first circuit board 10 are embedded. 1
Side of the metal member 107 exposed on the side of the second circuit board 104 is connected by alloying, and the connection portion 105 of the second circuit board 104 and the end of the metal member 107 exposed on the side of the second circuit board 104 are alloyed. It is connected by converting.

以下に本実施例をより詳細に説明する。 This embodiment will be described in more detail below.

まず、電気的接続部材125の一製造例を説明しつつ電
気的接続部材125を説明する。
First, the electrical connection member 125 will be described while describing an example of manufacturing the electrical connection member 125.

第2図に一製造例を示す。 FIG. 2 shows one manufacturing example.

まず、第2図(a)に示すように、絶縁シート155を
鉄板156の表裏に貼り付ける。その後、20μmφの金等
の金属あるいは合金よりなる金属線121が入る位置に金
属線121の線径より大きい内径の穴157をピッチ40μmで
あける。その後、穴157に金属線121を通した後に、穴15
7に樹脂123を入れ、樹脂123を硬化させる。硬化した樹
脂123は絶縁体となる。従って、金属線121は他の金属線
121と絶縁される。その後、点線124の位置でスライス切
断し、電気的接続部材125を作成する。このようにして
作成された電気的接続部材125を第2図(b),(c)
に示す。
First, as shown in FIG. 2A, the insulating sheet 155 is attached to the front and back of the iron plate 156. After that, holes 157 having an inner diameter larger than the wire diameter of the metal wire 121 are formed at a pitch of 40 μm at a position where the metal wire 121 made of a metal or alloy such as gold having a diameter of 20 μm enters. Then, after passing the metal wire 121 through the hole 157,
Put resin 123 in 7 and cure resin 123. The cured resin 123 becomes an insulator. Therefore, the metal wire 121 is
Insulated with 121. After that, slice cutting is performed at the position of the dotted line 124, and the electrical connection member 125 is created. The electrical connecting member 125 thus created is shown in FIGS. 2 (b) and 2 (c).
Shown in

なお、本例では、鉄板156を用いたが、他の金属体あ
るいは無機材料体でもよく、形状としても板に限らず棒
状体、球状体でもよい。さらに、樹脂123により鉄板156
と金属線121とを絶縁したが、鉄板156の穴157を予め絶
縁化してもよい。また、電気的接続部材の作成方法は上
記方法に限らず他の方法でもよい。
Although the iron plate 156 is used in this example, it may be another metal body or an inorganic material body, and the shape is not limited to a plate and may be a rod-shaped body or a spherical body. Furthermore, the resin 123 is used for the iron plate 156.
Although the metal wire 121 is insulated from the metal wire 121, the hole 157 of the iron plate 156 may be insulated in advance. Further, the method for producing the electrical connection member is not limited to the above method, and may be another method.

このように作成された電気的接続部材125において、
金属線121が金属部材107を構成し、鉄板156、絶縁シー
ト155、さらに樹脂123が絶縁体111を構成する。
In the electrical connection member 125 created in this way,
The metal wire 121 forms the metal member 107, and the iron plate 156, the insulating sheet 155, and the resin 123 form the insulator 111.

この電気的接続部材125においては金属部材となる金
属線121同士は樹脂123により電気的に接続されている。
また、金属線121の一端は回路基板101側に露出し、他端
は回路基板104側に露出している。この露出している部
分はそれぞれ回路基板101,104との接続部108,109とな
る。
In the electrical connection member 125, the metal wires 121, which are metal members, are electrically connected by the resin 123.
Further, one end of the metal wire 121 is exposed on the circuit board 101 side, and the other end is exposed on the circuit board 104 side. The exposed portions become connection portions 108 and 109 with the circuit boards 101 and 104, respectively.

次に、第1の回路基板101、電気的接続部材125、第2
の回路基板104を用意する。本例で使用する回路基板10
1,104は、第1図に示すように、その内部に多数の接続
部102,105を有している。
Next, the first circuit board 101, the electrical connection member 125, the second
The circuit board 104 of is prepared. Circuit board 10 used in this example
As shown in FIG. 1, the 1,104 has a large number of connecting portions 102,105 therein.

なお、第1の回路基板101の接続部102は、第2の回路
基板104の接続部105及び電気的接続部材125の接続部10
8,109に対応する位置に金属が露出している。
The connection portion 102 of the first circuit board 101 is the connection portion 105 of the second circuit board 104 and the connection portion 10 of the electrical connection member 125.
Metal is exposed at the positions corresponding to 8,109.

第1の回路基板101の接続部102と、電気的接続部材12
5の接続部108とを、又は、第2の回路基板104の接続部1
05と電気的接続部材125の接続部109が対応するように位
置決めを行ない、位置決め後、両方を合金化して接続す
る。
The connecting portion 102 of the first circuit board 101 and the electrical connecting member 12
5 or the connecting portion 1 of the second circuit board 104.
Positioning is performed so that 05 and the connection portion 109 of the electrical connection member 125 correspond, and after positioning, both are alloyed and connected.

ここで、上記第1の回路基板101、電気的接続部材12
5、第2の回路基板104を接続するには次の3方式が存在
するが、そのいずれの方式によってもよい。
Here, the first circuit board 101, the electrical connection member 12
5. The following three methods exist for connecting the second circuit board 104, but any of these methods may be used.

第1の回路基板101、電気的接続部材125、第2の回
路基板104を位置決めした後、第1の回路基板101の接続
部102と電気的接続部材125の接続部108とを、及び第2
の回路基板104の接続部105と電気的接続部材125の接続
部109とを同時に合金化して接 第1の回路基板101と電気的接続部材125とを位置決
めし、第1の回路基板101の接続部102と電気的接続部材
125の接続部108とを合金化して接続した後、第2の回路
基板104を位置決めし、電気接続部材125の接続部109と
第2の回路基板104の接続部105を合金化して接続する方
法。
After positioning the first circuit board 101, the electrical connection member 125, and the second circuit board 104, the connection portion 102 of the first circuit board 101 and the connection portion 108 of the electrical connection member 125, and the second
The connection portion 105 of the circuit board 104 and the connection portion 109 of the electrical connection member 125 are alloyed at the same time and the first circuit board 101 and the electrical connection member 125 are positioned to connect the first circuit board 101. Part 102 and electrical connection member
A method of alloying and connecting the connection portion 108 of the 125, then positioning the second circuit board 104, and alloying and connecting the connection portion 109 of the electrical connection member 125 and the connection portion 105 of the second circuit board 104. .

第2の回路基板104と電気的接続部材125とを位置決
めし、第2の回路基板104の接続部105と電気的接続部材
125の接続部109とを合金化して接続した後、第1の回路
基板101を位置決めし、電気接続部材125の接続部108と
第1の回路基板101の接続部102を合金化して接続する方
法。
The second circuit board 104 and the electrical connection member 125 are positioned, and the connection portion 105 of the second circuit board 104 and the electrical connection member are positioned.
A method of alloying and connecting the connection portion 109 of the 125, then positioning the first circuit board 101, and alloying and connecting the connection portion 108 of the electrical connection member 125 and the connection portion 102 of the first circuit board 101. .

以上のようにして作成した電気回路部材につきその接
続部の接続性を調べたところ高い信頼性をもって接続さ
れていた。
When the connectivity of the electrical circuit member produced as described above was examined, it was found to be connected with high reliability.

また、放熱特性も良好であった。 Also, the heat dissipation characteristics were good.

(第2実施例) 第3図に第2実施例を示す。(Second Embodiment) FIG. 3 shows a second embodiment.

本例は、接続部52を有する第1の電気回路部品として
回路基板51を、第2の電気回路部品として内部に多数の
接続部5を有する半導体素子4を使用した。
In this example, the circuit board 51 is used as the first electric circuit component having the connecting portion 52, and the semiconductor element 4 having a large number of connecting portions 5 therein is used as the second electric circuit component.

合金化は、半導体素子4の接続部5及び回路基板51の
接続部52と、所望形状をした金属体又は無機材料体の一
方又は両方が埋設されている電気的接続部材125の接続
部54との間で行なった。
The alloying is performed by connecting the connecting portion 5 of the semiconductor element 4 and the connecting portion 52 of the circuit board 51 to the connecting portion 54 of the electrical connecting member 125 in which one or both of the metal body and the inorganic material body having a desired shape are embedded. Between.

なお、所望形状をした金属体又は無機材料体の一方又
は両方が埋設されている電気的接続部材125としては半
導体素子4に対応する寸法のものを使用した。
As the electrical connecting member 125 in which one or both of the metal body and the inorganic material body having a desired shape are embedded, one having a size corresponding to the semiconductor element 4 was used.

合金化して接続後は回路基板51の下面にリードフレー
ム55を接続した。
After alloying and connection, the lead frame 55 was connected to the lower surface of the circuit board 51.

他の点は第1実施例と同様である。 The other points are similar to those of the first embodiment.

本例においても接続部は高い信頼性を持って接続され
ていた。
Also in this example, the connection portion was connected with high reliability.

また、放熱特性も良好であった。 Also, the heat dissipation characteristics were good.

(第3実施例) 第4図に第3実施例を示す。(Third Embodiment) FIG. 4 shows a third embodiment.

本例は、第1の電気回路部品が半導体素子4であり、
第2の電気回路部品が回路基板51である例である。
In this example, the first electric circuit component is the semiconductor element 4,
This is an example in which the second electric circuit component is the circuit board 51.

なお、接続後は回路基板51の上面にリードフレーム1
を接続し、封止材63により封止した。
After connection, the lead frame 1 is placed on the upper surface of the circuit board 51.
Were connected and sealed with a sealing material 63.

他の点は第1実施例と同様である。 The other points are similar to those of the first embodiment.

本例においても接続部は高い信頼性を持って接続され
ていた。
Also in this example, the connection portion was connected with high reliability.

また、放熱特性も良好であった。 Also, the heat dissipation characteristics were good.

(第4実施例) 第5図に第4実施例を示す。(Fourth Embodiment) FIG. 5 shows a fourth embodiment.

本例は、第1の電気回路部品が半導体素子4′であ
り、第2の電気回路部品が半導体素子4である例であ
り、本例では、電気的接続部材として半導体素子4に対
応した寸法のものを使用し、リードフレーム1を電気的
接続部材125の第1の半導体素子4′側に露出した金属
部材に接続している。
This example is an example in which the first electric circuit component is the semiconductor element 4'and the second electric circuit component is the semiconductor element 4. In this example, the dimensions corresponding to the semiconductor element 4 are used as the electrical connection members. The lead frame 1 is connected to the metal member exposed on the first semiconductor element 4 ′ side of the electrical connection member 125.

他は第3実施例と同様である。 Others are the same as the third embodiment.

本例においても接続部は高い信頼性を持って接続され
ていた。
Also in this example, the connection portion was connected with high reliability.

また、放熱特性も良好であった。 Also, the heat dissipation characteristics were good.

(第5実施例) 第6図に第5実施例を示す。(Fifth Embodiment) FIG. 6 shows a fifth embodiment.

第5実施例は、第1の電気回路部品、第2の電気回路
部品として、接続部以外の部分が絶縁膜103,106で覆わ
れている回路基板101,104を使用している例である。
The fifth embodiment is an example in which, as the first electric circuit component and the second electric circuit component, circuit boards 101 and 104 in which portions other than the connection portions are covered with insulating films 103 and 106 are used.

また、電気的接続部材としては第7図に示すものを使
用した。すなわち、第7図に示す絶縁体111中に鉄板156
が埋設されている電気的接続部材125は、金属部材107の
露出している部分が樹脂絶縁体111の面から突出してい
る。このような電気的接続部材125の作成は、例えば、
次の方法によればよい。
As the electrical connecting member, the one shown in FIG. 7 was used. That is, the iron plate 156 is placed in the insulator 111 shown in FIG.
In the electrical connection member 125 in which is embedded, the exposed portion of the metal member 107 projects from the surface of the resin insulator 111. The creation of such an electrical connection member 125 is performed by, for example,
The following method may be used.

まず、第1実施例で述べた方法により、第2図
(b),(c)に示す電気的接続部材を用意する。次に
この電気的接続部材の両面を、金属線121が、絶縁シー
ト155から10μm程度突出するまでエッチングすればよ
い。
First, the electrical connection member shown in FIGS. 2B and 2C is prepared by the method described in the first embodiment. Next, both surfaces of this electrical connection member may be etched until the metal wire 121 protrudes from the insulating sheet 155 by about 10 μm.

なお、本実施例では金属線121の突出量を10μmとし
たが、いかなる量でもよい。
Although the amount of protrusion of the metal wire 121 is 10 μm in this embodiment, any amount may be used.

また、金属線121を突出させる方法としてはエッチン
グに限らず、他の化学的な方法又は機械的な方法を使用
してもよい。
Further, the method of projecting the metal wire 121 is not limited to etching, and other chemical method or mechanical method may be used.

他の点は第1実施例と同様である。 The other points are similar to those of the first embodiment.

なお、突出部を、電気的接続部材125を金属線121の位
置に凹部を持った型に挟み込み、金属線121の突起126を
つぶすことにより第8図に示すようなバンプ150を形成
してもよい。この場合金属線121は絶縁体111から脱落し
にくくなる。
It should be noted that the protruding portion may be sandwiched in a mold having a recess at the position of the metal wire 121 and the protrusion 126 of the metal wire 121 may be crushed to form a bump 150 as shown in FIG. Good. In this case, the metal wire 121 is less likely to fall off the insulator 111.

なお、本例でも、金属線121が金属部材107を構成し、
さらに、鉄板156、絶縁シート155、さらに樹脂123が絶
縁体111を構成する。
Also in this example, the metal wire 121 constitutes the metal member 107,
Further, the iron plate 156, the insulating sheet 155, and the resin 123 form the insulator 111.

なお、バンプを作成するのには突起を熱で溶融させ、
バンプを作成してもよいし、他のいかなる方法でもよ
い。
In order to create bumps, the protrusions are melted by heat,
Bumps may be created or any other method.

本例においても接続部は高い信頼性を持って接続され
ていた。
Also in this example, the connection portion was connected with high reliability.

また、放熱特性も良好であった。 Also, the heat dissipation characteristics were good.

(第6実施例) 第9図に第6実施例を示す。(Sixth Embodiment) FIG. 9 shows a sixth embodiment.

本例は、第1の電気回路部品として半導体素子4を使
用し、第2の電気部品としてリードフレーム1を使用し
た例である。
In this example, the semiconductor element 4 is used as the first electric circuit component, and the lead frame 1 is used as the second electric component.

他の点は第5実施例と同様である。 The other points are the same as in the fifth embodiment.

本例においても接続部は高い信頼性を持って接続され
ていた。
Also in this example, the connection portion was connected with high reliability.

また、放熱特性も良好であった。 Also, the heat dissipation characteristics were good.

(第7実施例) 第10図に第7実施例を示す。(Seventh Embodiment) FIG. 10 shows a seventh embodiment.

本例においては、電気的接続部材125は、第5実施例
に示した電気的接続部材と異なる。すなわち、本例の電
気的接続部材125においては、金属部材同士のピッチが
第5実施例で示したものよりも狭くなっている。すなわ
ち、本例では、第1の回路基板接続部の間隔よりも狭い
間隔に金属部材107同士のピッチを設定してある。
In this example, the electrical connecting member 125 is different from the electrical connecting member shown in the fifth embodiment. That is, in the electrical connection member 125 of this example, the pitch between the metal members is narrower than that shown in the fifth embodiment. That is, in this example, the pitch between the metal members 107 is set to be narrower than the distance between the first circuit board connecting portions.

つまり、第5実施例では、第1の回路基板101と第2
の回路基板104との接続位置に電気的接続部材125の接続
位置を配設したため、電気的接続部材125の位置決めが
必要であったが、本例では、第1の回路基板101と第2
の回路基板104との位置決めは必要であるが、電気的接
続部材125との位置決めは不要となる。そのため、第1
の回路基板101と第2の回路基板104の接続寸法(d11,P1
1)と電気的接続部材の接続寸法(d12,P12)を適切な値
に選ぶことにより位置決めなしで接続することも可能で
ある。
That is, in the fifth embodiment, the first circuit board 101 and the second circuit board 101
Since the connection position of the electrical connection member 125 is arranged at the connection position with the circuit board 104, it is necessary to position the electrical connection member 125. However, in this example, the first circuit board 101 and the second
Although the positioning with respect to the circuit board 104 is necessary, the positioning with the electrical connection member 125 is not necessary. Therefore, the first
Dimensions of the circuit board 101 and the second circuit board 104 (d11, P1
It is also possible to connect without positioning by selecting appropriate values for the connection dimensions (d12, P12) of 1) and the electrical connection member.

本例においても接続部は高い信頼性を持って接続され
ていた。
Also in this example, the connection portion was connected with high reliability.

また、放熱特性も良好であった。 Also, the heat dissipation characteristics were good.

(第8実施例) 第11図に第8実施例に使用する電気的接続部材を示
す。
(Eighth Embodiment) FIG. 11 shows an electrical connecting member used in the eighth embodiment.

第11図(a)は電気的接続部材の斜視図、第11図
(b)は上記電気的接続部材の断面図である。
FIG. 11 (a) is a perspective view of the electrical connecting member, and FIG. 11 (b) is a sectional view of the electrical connecting member.

かかる電気的接続部材の作成例を次に述べる。 An example of making such an electrical connection member will be described below.

まず、第1実施例に示した製法で、絶縁体中に鉄板15
6が埋設されている電気的接続部材128,129,130を3枚用
意する。
First, according to the manufacturing method shown in the first embodiment, the iron plate 15 is placed in the insulator.
Three electrical connection members 128, 129, 130 in which 6 is embedded are prepared.

1枚目128の金属線121の位置はm行n列目で、ma,nb
だけ中心から変位している。2枚目129の金属線121の位
置はm行n列目でmac,nbcだけ中心から変位している。
3枚目130の金属線121の位置はm行n列でmad,nbdだけ
中心から変位している。a,b,c,dの値は上下の金属121は
導通するが左右には互いに電気的に導通しないような値
をとる。3枚の電気的接続部材を位置決めし、熱圧着等
の方法を用い積層し、電気的接続部材125を作成する。
The position of the metal wire 121 of the first sheet 128 is at the m-th row and the n-th column, ma, nb
Only displaced from the center. The position of the metal wire 121 of the second sheet 129 is displaced from the center by mac and nbc at the m-th row and the n-th column.
The position of the metal wire 121 of the third sheet 130 is displaced from the center by mad, nbd in m rows and n columns. The values of a, b, c, and d are such that the upper and lower metals 121 are conductive, but the left and right metals 121 are not electrically conductive with each other. The three electrical connecting members are positioned and laminated by a method such as thermocompression bonding to form the electrical connecting member 125.

なお、本例においては、電気的接続部材の金属の位置
をm行n列というように規則をもった位置を選んだが、
上下の金属が導通し、左右には互いに電気的に導通しな
いようにすればランダムでもよい。
In addition, in this example, the position of the metal of the electrical connection member is selected according to a rule such as m rows and n columns.
It may be random as long as the upper and lower metals are electrically connected and the left and right metals are not electrically connected to each other.

また、本例では3層積層する場合について述べたが、
2枚以上であれば何枚でもよい。また、熱圧着の方法を
用いて積層すると述べたが、圧着、接着等の方法を用い
てもよい。さらに、本例の電気的接続部材を加工して第
7図に示すように突起を設けてもよいし、第8図に示し
たようにバンプ150を設けてもよい。
In addition, although the case where three layers are stacked is described in this example,
Any number may be used as long as it is two or more. Moreover, although it has been described that the layers are laminated by using a thermocompression bonding method, a method such as pressure bonding or adhesion may be used. Further, the electrical connection member of this example may be processed to provide protrusions as shown in FIG. 7, or bumps 150 as shown in FIG.

本例においても接続部は高い信頼性を持って接続され
ていた。
Also in this example, the connection portion was connected with high reliability.

また、放熱特性も良好であった。 Also, the heat dissipation characteristics were good.

(第9実施例) 第12図に第9実施例に使用する電気的接続部材を示
す。
(Ninth Embodiment) FIG. 12 shows an electrical connecting member used in the ninth embodiment.

第12図(a)は電気的接続部材の製造途中の断面図、
第12図(b)は上記電気的接続部材の斜視図、第12図
(c)は上記の断面図である。
FIG. 12 (a) is a cross-sectional view of the electrical connecting member during manufacture,
FIG. 12 (b) is a perspective view of the electrical connecting member, and FIG. 12 (c) is the above sectional view.

まず、金属線案内板131,132、鉄板156を用意する。そ
して、鉄板156を金属線案内板131,132の間に挿入し、保
持する。次に、金属線案内板131,132にあけられている
所望の穴133,134に金属線121を通し、所望の張力で張
る。その後、金属線案内板131,132間に樹脂123を流し込
み、硬化させる。しかる後、案内板を取りはずし、電気
的接続部材125を作成する。
First, the metal wire guide plates 131 and 132 and the iron plate 156 are prepared. Then, the iron plate 156 is inserted and held between the metal wire guide plates 131 and 132. Next, the metal wire 121 is passed through the desired holes 133 and 134 formed in the metal wire guide plates 131 and 132 and stretched with a desired tension. Then, the resin 123 is poured between the metal wire guide plates 131 and 132 to be cured. After that, the guide plate is removed, and the electrical connection member 125 is created.

また、本例の電気的接続部材を加工して、第7図に示
すように突起を設けてもよいし、第8図に示すようにバ
ンプ150を設けてもよい。
Further, the electrical connection member of this example may be processed to provide a protrusion as shown in FIG. 7 or a bump 150 as shown in FIG.

本実施例の第1の回路部品及び第2の電気回路部品
は、それぞれ、半導体素子、回路基板、リードフレーム
等の回路基材のうちの1つである。本例においても接続
部は高い信頼性を持って接続されていた。
Each of the first circuit component and the second electric circuit component of this embodiment is one of circuit substrates such as a semiconductor element, a circuit board, and a lead frame. Also in this example, the connection portion was connected with high reliability.

また、放熱特性も良好であった。 Also, the heat dissipation characteristics were good.

[発明の効果] 本発明は以上のように構成したので次の数々の効果が
得られる。
[Effects of the Invention] Since the present invention is configured as described above, the following various effects can be obtained.

1.半導体素子と回路基板、リードフレーム等の回路基材
の接続に関し、信頼性の高い接続が得られる。従って、
従来用いられていたワイヤボンディング方式、TAB方
式、CCB方式を置き変えることが可能となる。
1. Reliable connection can be obtained regarding the connection between the semiconductor element and the circuit substrate such as the circuit board and the lead frame. Therefore,
It is possible to replace the conventionally used wire bonding method, TAB method, and CCB method.

2.本発明によると電気回路部品の接続部をいかなる位置
(特に内部)にも配置することができることからワイヤ
ボンディング方式、TAB方式よりもさらに多点接続が可
能となり、多ピン数接続向きの方式となる。
2. According to the present invention, since the connection portion of the electric circuit component can be arranged at any position (especially inside), it is possible to connect more points than the wire bonding method and the TAB method, and a method suitable for a high pin count connection. Becomes

さらに電気的接続部材の隣接金属間に絶縁物質が存在
することにより隣接金属間の電気的導通しないことより
CCB方式よりもさらに多点接続が可能となる。
Furthermore, since there is an insulating substance between the adjacent metals of the electrical connection member, there is no electrical continuity between the adjacent metals.
It enables more multi-point connection than the CCB method.

3.電気的接続部材において使用される金属部材の量は従
来に比べ微量であるため、仮に金属部材に金等の高価な
金属を使用しても従来より安価となる。
3. Since the amount of the metal member used in the electrical connection member is smaller than that of the conventional one, even if an expensive metal such as gold is used for the metal member, the cost will be lower than the conventional one.

4.高密度の半導体装置等が得られる。4. High-density semiconductor devices can be obtained.

5.電気回路部品の両方が、電気接続部材を介して合金化
されており電気回路部品同士が強固(強度的に強く)か
つ確実に接続されるので、機械的に強く、不良率の極め
て低い電気回路部材を得ることができる。
5. Both of the electric circuit parts are alloyed through the electric connection member, and the electric circuit parts are connected firmly (strong in strength) and securely, so they are mechanically strong and the defect rate is extremely low. An electric circuit member can be obtained.

6.電気的接続部材の絶縁体中には金属体又は無機材料体
の一方又は両方が埋設されているので、第1の電気回路
部品又は第2の電気回路部品に熱が発生しても電気的接
続部材を介してその熱は外部に放熱される。従って、放
熱性の良好な電気回路部材を得ることができる。
6. Since one or both of the metal body and the inorganic material body are embedded in the insulator of the electrical connection member, even if heat is generated in the first electric circuit component or the second electric circuit component, electric power is generated. The heat is radiated to the outside through the static connection member. Therefore, an electric circuit member having good heat dissipation can be obtained.

なお、例えば、無機材料体の内から、電気回路部品に
近い熱膨張係数を有するものを選択し、それを電気的接
続部材の絶縁体中に埋設すれば、熱が加わっても熱応力
の発生が少なく、信頼性の高い電気回路部材、ひいて
は、半導体装置が得られる。
Note that, for example, if one having a coefficient of thermal expansion close to that of an electric circuit component is selected from among the inorganic material bodies and embedded in the insulator of the electrical connection member, thermal stress is generated even if heat is applied. And a highly reliable electric circuit member and eventually a semiconductor device can be obtained.

もちろん、電気的接続部材の電気的絶縁物質として半
導体素子及び回路基材と同じかあるいは同程度の熱膨張
率を持つ材料を選択することにより信頼性の良い半導体
装置が得られる。
Of course, a highly reliable semiconductor device can be obtained by selecting a material having the same or similar coefficient of thermal expansion as the semiconductor element and the circuit substrate as the electrically insulating material of the electrical connection member.

なお、電気的接続部材の絶縁体中に金属体を埋設した
場合、放熱性が良く、低応力でしかもシールド効率の高
い電気回路部材が得られる。
When the metal body is embedded in the insulator of the electrical connection member, an electric circuit member having good heat dissipation, low stress, and high shielding efficiency can be obtained.

【図面の簡単な説明】[Brief description of drawings]

第1図は第1実施例を示す断面図である。第1図(a)
は接続前の状態を示し、第2図(b)は接続後の状態を
示す。第2図は第1実施例に使用する電気的接続部材の
一製造方法例を説明するための図であり、第2図(a)
は断面図、第2図(b)は斜視図、第2図(c)は断面
図である。第3図は第2実施例を示し、第3図(a)は
斜視図、第3図(b)は断面図である。第4図は第3実
施例を示す断面図である。第5図は第4実施例を示す断
面図である。第6図は第5実施例を示し、第6図(a)
は接続前の状態を示す断面図であり第6図(b)は接続
後の状態を示す断面図である。第7図及び第8図も第5
実施例を示し、第7図(a)及び第8図(a)は斜視図
であり、第7図(b)及び第8図(b)は断面図であ
る。第9図は第6実施例を示し、第9図(a)は接続前
の状態を示す斜視図であり、第9図(b)は接続後の状
態を示す断面図である。第10図は第7実施例を示す断面
図であり、第10図(a)は接続前の状態を示し、第10図
(b)は接続後の状態を示す。第11図は第8実施例に係
る電気的接続部材を示し、第11図(a)は斜視図であ
り、第11図(b)は断面図である。第12図は第9実施例
に係る電気的接続部材の一製造例を示し、第12図
(a),(c)は断面図であり、第12図(b)は斜視図
である。第13図から第20図までは従来例を示し、第14図
を除き断面図であり、第14図は平面透視図である。 1……リードフレーム、2……リードフレームの素子搭
載部、3……銀ペースト、4,4′……半導体素子、5,5′
……半導体素子の接続部、6……リードフレームの接続
部、7……極細金属線、8……樹脂、9……半導体装
置、10……半導体素子の外周縁部、11……リードフレー
ムの素子搭載部の外周縁部、16……キャリアフィルム基
板、17……キャリアフィルム基板のインナーリード部、
20……樹脂、21……樹脂、31……半田バンプ、32……基
板、33……基板の接続部、51……回路基板、52……回路
基板の接続部、54……電気的接続部材の接続部、55……
リードフレーム、63……封止材、70,70′……金属材、7
1,71′……絶縁膜、72,72′……絶縁膜の露出面、73、7
3′……金属材の露出面、75,75′……回路基材、76,7
6′……回路基材の接続部、77……異方性導電膜の絶縁
物質、78……異方性導電膜、79……導電粒子、81……エ
ラスチックコネクタの絶縁物質、82……エラスチックコ
ネクタの金属線、83……エラスチックコネクタ、101…
…回路基板、102……接続部、103……絶縁膜、106……
絶縁膜、104……回路基板、105……接続部、107……金
属部材、108……接続部、109……接続部、111……絶縁
体、121……金属線、123……樹脂、124……点線、125…
…電気的接続部材、126……突起、128,129,130……電気
的接続部材、131,132……金属線案内板、150……バン
プ、155……絶縁シート、156……鉄板、157……穴。
FIG. 1 is a sectional view showing the first embodiment. Fig. 1 (a)
Shows the state before connection, and FIG. 2 (b) shows the state after connection. FIG. 2 is a view for explaining an example of a manufacturing method of the electrical connecting member used in the first embodiment, and FIG.
Is a sectional view, FIG. 2 (b) is a perspective view, and FIG. 2 (c) is a sectional view. FIG. 3 shows a second embodiment, FIG. 3 (a) is a perspective view, and FIG. 3 (b) is a sectional view. FIG. 4 is a sectional view showing the third embodiment. FIG. 5 is a sectional view showing the fourth embodiment. FIG. 6 shows a fifth embodiment, and FIG. 6 (a)
Is a sectional view showing a state before connection, and FIG. 6 (b) is a sectional view showing a state after connection. 7 and 8 are also fifth
FIG. 7 (a) and FIG. 8 (a) are perspective views, and FIGS. 7 (b) and 8 (b) are sectional views showing an embodiment. FIG. 9 shows a sixth embodiment, FIG. 9 (a) is a perspective view showing a state before connection, and FIG. 9 (b) is a sectional view showing a state after connection. FIG. 10 is a sectional view showing a seventh embodiment, FIG. 10 (a) shows a state before connection, and FIG. 10 (b) shows a state after connection. FIG. 11 shows an electrical connecting member according to the eighth embodiment, FIG. 11 (a) is a perspective view, and FIG. 11 (b) is a sectional view. FIG. 12 shows a manufacturing example of the electrical connecting member according to the ninth embodiment, wherein FIGS. 12 (a) and 12 (c) are sectional views and FIG. 12 (b) is a perspective view. FIG. 13 to FIG. 20 show a conventional example and are sectional views except FIG. 14, and FIG. 14 is a plan perspective view. 1 ... Lead frame, 2 ... Lead frame element mounting part, 3 ... Silver paste, 4,4 '... Semiconductor element, 5,5'
...... Semiconductor element connection part, 6 ...... Lead frame connection part, 7 …… Ultra-fine metal wire, 8 …… Resin, 9 …… Semiconductor device, 10 …… Semiconductor element outer peripheral edge part, 11 …… Lead frame Outer periphery of the element mounting part of 16 ... Carrier film substrate, 17 ... Inner lead part of carrier film substrate,
20 …… resin, 21 …… resin, 31 …… solder bump, 32 …… board, 33 …… board connection, 51 …… circuit board, 52 …… circuit board connection, 54 …… electrical connection Connection of parts, 55 ……
Lead frame, 63 …… Encapsulation material, 70,70 ′ …… Metal material, 7
1,71 ′ …… Insulating film, 72,72 ′ …… Exposed surface of insulating film, 73,7
3 '... exposed surface of metal material, 75,75' ... circuit substrate, 76,7
6 '... Circuit board connection, 77 ... Anisotropic conductive film insulating material, 78 ... Anisotropic conductive film, 79 ... Conductive particles, 81 ... Elastic connector insulating material, 82 ... Elastic connector metal wire, 83 …… Elastic connector, 101…
… Circuit board, 102 …… Connection part, 103 …… Insulation film, 106 ……
Insulating film, 104 ... Circuit board, 105 ... Connection part, 107 ... Metal member, 108 ... Connection part, 109 ... Connection part, 111 ... Insulator, 121 ... Metal wire, 123 ... Resin, 124 ... dotted line, 125 ...
… Electrical connection member, 126 …… Projection, 128,129,130 …… Electrical connection member, 131,132 …… Metal wire guide plate, 150 …… Bump, 155 …… Insulation sheet, 156 …… Steel plate, 157 …… Hole.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 市田 安照 東京都大田区下丸子3丁目30番2号 キヤ ノン株式会社内 (72)発明者 小西 正暉 東京都大田区下丸子3丁目30番2号 キヤ ノン株式会社内 (56)参考文献 特開 昭61−272941(JP,A) 特開 昭53−53261(JP,A) 特開 昭56−93337(JP,A) 特開 昭60−100441(JP,A) 特開 昭60−123093(JP,A) 特開 昭62−234804(JP,A) 特開 昭62−237739(JP,A) 特開 昭51−22367(JP,A) 実開 昭58−159741(JP,U) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yasuteru Ichida 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Masaaki Konishi 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (56) Reference JP 61-272941 (JP, A) JP 53-53261 (JP, A) JP 56-93337 (JP, A) JP 60-100441 ( JP, A) JP 60-123093 (JP, A) JP 62-234804 (JP, A) JP 62-237739 (JP, A) JP 51-22367 (JP, A) Sho 58-159741 (JP, U)

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】接続部を有する第1の電気回路部品と、接
続部を有する第2の電気回路部品とを、両電気回路部品
を電気的に接続するための電気的接続部材を両者の間に
介在させて、両電気回路部品の接続部において接続して
構成される電気回路部材において、 該電気的接続部材は、金属または合金よりなる複数の金
属部材を、該金属部材の一端を第1の電気部品側に露出
させて、一方、該金属部材の他端を該第2の電気回路部
品側に露出させて、それぞれの金属部材同士が電気的に
絶縁されるように、絶縁体中に埋設して構成されてお
り、かつ、該絶縁体には、所望形状をした金属体又は無
機材料体の一方又は両方が埋設されており、 第1の電気回路部品の接続部と第1の電気回路部品側に
露出した金属部材の一端とを合金化することにより接続
し、かつ、第2の電気回路部品の接続部と第2の電気回
路部品側に露出した金属部材の一端とを合金化すること
により接続したことを特徴とする電気回路部材。
1. A first electric circuit component having a connecting portion and a second electric circuit component having a connecting portion are provided with an electric connecting member for electrically connecting both electric circuit components. And a plurality of metal members made of a metal or an alloy, wherein one end of each of the metal members is a first electric member. Of the metal member while exposing the other end of the metal member to the second electric circuit component side so that the metal members are electrically insulated from each other. One or both of a metal body or an inorganic material body having a desired shape is embedded in the insulator, and the insulator is embedded. By alloying with one end of the metal member exposed on the circuit component side, Connect, and an electrical circuit member and one end of the second electric circuit components of the connecting portion and the second electrical circuit components exposed to the side metal member is characterized in that connected by alloying.
【請求項2】第1の電気回路部品及び第2の電気回路部
品は、それぞれ半導体素子、回路基板やリードフレーム
等の回路基材のうち1つである特許請求範囲第1項記載
の電気回路部材。
2. The electric circuit according to claim 1, wherein each of the first electric circuit component and the second electric circuit component is one of circuit substrates such as a semiconductor element, a circuit board and a lead frame. Element.
JP62071979A 1987-03-04 1987-03-26 Electric circuit member Expired - Fee Related JPH0828401B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP62071979A JPH0828401B2 (en) 1987-03-26 1987-03-26 Electric circuit member
EP98102122A EP0854506A3 (en) 1987-03-04 1988-03-04 Electrically connecting member and electric circuit member
EP88103400A EP0284820A3 (en) 1987-03-04 1988-03-04 Electrically connecting member, and electric circuit member and electric circuit device with the connecting member
US08/597,383 US5967804A (en) 1987-03-04 1996-02-08 Circuit member and electric circuit device with the connecting member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62071979A JPH0828401B2 (en) 1987-03-26 1987-03-26 Electric circuit member

Publications (2)

Publication Number Publication Date
JPS63237537A JPS63237537A (en) 1988-10-04
JPH0828401B2 true JPH0828401B2 (en) 1996-03-21

Family

ID=13476091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62071979A Expired - Fee Related JPH0828401B2 (en) 1987-03-04 1987-03-26 Electric circuit member

Country Status (1)

Country Link
JP (1) JPH0828401B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5098902B2 (en) * 2008-09-02 2012-12-12 富士通株式会社 Electronic components
WO2017175376A1 (en) * 2016-04-08 2017-10-12 オリンパス株式会社 Semiconductor device and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS63237537A (en) 1988-10-04

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Legal Events

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LAPS Cancellation because of no payment of annual fees