JPH0828400B2 - Electric circuit member - Google Patents
Electric circuit memberInfo
- Publication number
- JPH0828400B2 JPH0828400B2 JP62066485A JP6648587A JPH0828400B2 JP H0828400 B2 JPH0828400 B2 JP H0828400B2 JP 62066485 A JP62066485 A JP 62066485A JP 6648587 A JP6648587 A JP 6648587A JP H0828400 B2 JPH0828400 B2 JP H0828400B2
- Authority
- JP
- Japan
- Prior art keywords
- electric circuit
- connection
- metal
- semiconductor element
- circuit board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】 [産業上の利用分野] 本発明は、電気回路部材に関する。TECHNICAL FIELD The present invention relates to an electric circuit member.
[従来技術] 従来、電気回路部品同士を電気的に接続して構成され
る電気回路部材に関する技術としては以下に述べる技術
が知られている。[Prior Art] Conventionally, the following technology has been known as a technology relating to an electric circuit member configured by electrically connecting electric circuit components to each other.
ワイヤボンディング方法、 第13図及び第14図はワイヤボンディング方法によって
接続され、封止された半導体装置の代表例を示してお
り、以下、第13図及び第14図に基づきワイヤボンディン
グ方法を説明する。Wire Bonding Method, FIGS. 13 and 14 show a typical example of a semiconductor device which is connected and sealed by the wire bonding method, and the wire bonding method will be described below with reference to FIGS. 13 and 14. .
この方法は、Agペースト3等を用いて半導体素子4を
素子搭載部2に固定支持し、次いで、半導体素子4の接
続部5と、リードフレーム1の所望の接続部6とを金等
の極細金属線7を用いて電気的に接続する方法である。In this method, the semiconductor element 4 is fixedly supported on the element mounting portion 2 using Ag paste 3 or the like, and then the connecting portion 5 of the semiconductor element 4 and the desired connecting portion 6 of the lead frame 1 are made of a fine metal such as gold. This is a method of electrically connecting using the metal wire 7.
なお、接続後は、トランスファーモールド法等の方法
で樹脂8を用いて半導体素子4とリードフレーム1を封
止し、その後、樹脂封止部分から外に伸びたリードフレ
ーム1の不要部分を切断し、所望の形に曲げ半導体装置
9を作る。After the connection, the semiconductor element 4 and the lead frame 1 are sealed with a resin 8 by a method such as a transfer molding method, and then an unnecessary portion of the lead frame 1 extending from the resin sealing portion is cut. The bent semiconductor device 9 is formed into a desired shape.
TAB(Tape Automated Bonding)法(例えば、特開昭5
9−139636号公報) 第15図はTAB法により接続され封止された半導体装置
の代表例を示す。TAB (Tape Automated Bonding) method.
FIG. 15 shows a typical example of a semiconductor device connected and sealed by the TAB method.
この方法は、テープキャリア方式による自動ボンディ
ング方法である。すなわち、第15図に基づいて説明する
と、キャリアフィルム基板16と半導体素子4とを位置決
めした後、キャリアフィルム基板16のインナーリード部
17と半導体素子4の接続部5とを熱圧着することにより
接続する方法である。接続後は、樹脂20乃至樹脂21で封
止し半導体装置9とする。This method is an automatic bonding method using a tape carrier method. That is, referring to FIG. 15, after positioning the carrier film substrate 16 and the semiconductor element 4, the inner lead portion of the carrier film substrate 16 is positioned.
In this method, 17 and the connection portion 5 of the semiconductor element 4 are connected by thermocompression bonding. After the connection, the semiconductor device 9 is sealed with resin 20 to resin 21.
CCB(Controlled Collapse Bonding)法(例えば、特
公昭42−2096号、特開昭60−57944号公報) 第16図はCCB法によって接続され封止された半導体装
置の代表例を示す。この方法を第16図に基づき説明す
る。なお、本方法はフリップチップボンディング法とも
言われている。CCB (Controlled Collapse Bonding) method (for example, JP-B-42-2096 and JP-A-60-57944) FIG. 16 shows a typical example of a semiconductor device connected and sealed by the CCB method. This method will be described with reference to FIG. This method is also called a flip chip bonding method.
半導体素子4の接続部5に予め半田バンプ31を設け、
半田バンプ31が設けられた半導体素子4を、回路基板32
上に位置決めして搭載する。その後、半田を加熱溶解す
ることにより回路基板32とに半導体素子4とを接続さ
せ、フラックス洗浄後封止して半導体装置9を作る。The solder bumps 31 are provided in advance on the connecting portions 5 of the semiconductor element 4,
The semiconductor element 4 provided with the solder bumps 31 is connected to the circuit board 32.
Position and mount on top. Thereafter, the semiconductor element 4 is connected to the circuit board 32 by heating and melting the solder, and the semiconductor device 9 is manufactured by sealing after flux cleaning.
第17及び第18図に示す方法 すなわち、第1の半導体素子4の接続部5以外の部分
にポリイミド等よりなる絶縁膜71を形成せしめ、接続部
5にはAu等よりなる金属材70を設け、次いで、金属材70
及び絶縁膜71の露出面73,72を平らにする。一方、第2
の半導体素子4′の接続部5′以外の部分にポリイミド
等よりなる絶縁膜71′を形成せしめ、接続部5′にはAu
等よりなる金属材70′を設け、次いで、金属材70′及び
絶縁膜71′の露出面73′,72′を平らにする。17 and 18, that is, an insulating film 71 made of polyimide or the like is formed on a portion other than the connection portion 5 of the first semiconductor element 4, and a metal material 70 made of Au or the like is provided on the connection portion 5. , Then metal material 70
And the exposed surfaces 73, 72 of the insulating film 71 are flattened. Meanwhile, the second
An insulating film 71 'made of polyimide or the like is formed on a portion of the semiconductor element 4'other than the connecting portion 5', and Au is formed on the connecting portion 5 '.
And the like, and then the exposed surfaces 73 'and 72' of the metal material 70 'and the insulating film 71' are flattened.
しかる後、第18図に示すように第1の半導体素子4と
第2の半導体素子4′とを位置決めし、位置決め後、熱
圧着することにより第1の半導体素子4の接続部5と第
2の半導体素子4′の接続部5′を金属材70,70′を介
して接続する。Then, as shown in FIG. 18, the first semiconductor element 4 and the second semiconductor element 4 ′ are positioned, and after positioning, thermocompression bonding is performed to connect the first semiconductor element 4 and the second semiconductor element 4 ′ with the second semiconductor element 4. The connecting portion 5'of the semiconductor element 4'is connected through the metal members 70, 70 '.
第19図に示す方法 すなわち、第1の回路基材75と第2の回路基材75′の
間に、絶縁物質77中に導電粒子79を分散させた異方性導
電膜78を介在させ、第1の回路基材75と第2の回路基材
75′を位置決めしたのち、加圧もしくは、加圧・加熱
し、第1の回路基材75の接続部76と第2の回路基材75′
の接続部76′を接続する方法である。The method shown in FIG. 19, that is, an anisotropic conductive film 78 in which conductive particles 79 are dispersed in an insulating material 77 is interposed between the first circuit substrate 75 and the second circuit substrate 75 ′, First circuit board 75 and second circuit board
After positioning 75 ', pressurization or pressurization / heating is performed to connect the connecting portion 76 of the first circuit board 75 and the second circuit board 75'.
This is a method of connecting the connection portion 76 'of.
第20図に示す方法 すなわち、第1の回路基材75と第2の回路基材75′の
間に、絶縁物質81中に一定方向にFe,Cu等の金属線82を
配したエラスチックコネクター83を介在させ、第1の回
路基材75と第2の回路基材75′を位置決めしたのち、加
圧し、第1の回路基材75の接続部76と第2の回路基材7
5′の接続部76′を接続する方法である。20. That is, an elastic connector 83 in which a metal wire 82 of Fe, Cu or the like is arranged in a certain direction in an insulating substance 81 between a first circuit substrate 75 and a second circuit substrate 75 '. The first circuit board 75 and the second circuit board 75 'are positioned with the interposition of, and then pressure is applied to connect the first circuit board 75 to the connection part 76 of the first circuit board 75 and the second circuit board 7'.
This is a method of connecting the 5'connection portion 76 '.
[発明が解決しようとする問題点] ところで上記した従来のボンディング法には次のよう
な問題点がある。[Problems to be Solved by the Invention] The conventional bonding method described above has the following problems.
ワイヤボンディング法 半導体素子4の接続部5を半導体素子4の内部にくる
ように設計すると、極細金属線7は、その線径が極めて
小さいために、半導体素子4の外周縁部10あるいはリー
ドフレーム1の素子搭載部2の外周縁部11に接触し易く
なる。極細金属線7がこれら外周縁部10乃至11に接触す
ると短絡する。さらに、極細金属線7の長さを長くせざ
るを得ず、その長さを長くすると、トランスファーモー
ルド成形時に極細金属線7が変形しやすくなる。Wire Bonding Method When the connecting portion 5 of the semiconductor element 4 is designed to be inside the semiconductor element 4, the ultrafine metal wire 7 has an extremely small wire diameter, and therefore the outer peripheral edge portion 10 of the semiconductor element 4 or the lead frame 1 is formed. It becomes easy to contact the outer peripheral edge portion 11 of the element mounting portion 2. When the ultrafine metal wire 7 contacts these outer peripheral edge portions 10 to 11, a short circuit occurs. Further, the length of the ultrafine metal wire 7 must be increased, and if the length is increased, the ultrafine metal wire 7 is easily deformed during transfer molding.
従って、半導体素子4の接続部5は半導体素子4上の
周辺に配置する必要が生じ、回路設計上の制限を受けざ
るを得なくなる。Therefore, the connecting portion 5 of the semiconductor element 4 needs to be arranged on the periphery of the semiconductor element 4, and the circuit design must be restricted.
ワイヤボンディング法においては、隣接する極細金属
線7同士の接触等を避けるためには半導体素子4上の接
続部5のピッチ寸法(隣接する接続部の中心間の距離)
としてある程度の間隔をとらざるを得ない。従って、半
導体素子4の大きさが決まれば必然的に接続部5の最大
数が決まる。しかるに、ワイヤボンディング法では、こ
のピッチ寸法は通常0.2mm程度と大きいので、接続部5
の数は少なくせざるを得なくなる。In the wire bonding method, in order to avoid contact between adjacent ultrafine metal wires 7 or the like, the pitch dimension of the connection portions 5 on the semiconductor element 4 (distance between centers of adjacent connection portions)
There is no choice but to take some distance. Therefore, if the size of the semiconductor element 4 is determined, the maximum number of the connecting portions 5 is inevitably determined. However, in the wire bonding method, since the pitch dimension is as large as about 0.2 mm, the connecting portion 5
There is no choice but to reduce the number of.
半導体素子4上の接続部5から測った極細金属線7の
高さhは通常0.2〜0.4mmであるが、0.2mm以下にし薄型
化することは比較的困難であるので薄型化を図れない。The height h of the ultrafine metal wire 7 measured from the connecting portion 5 on the semiconductor element 4 is usually 0.2 to 0.4 mm, but it is relatively difficult to reduce the height to 0.2 mm or less, and thus it cannot be made thin.
ワイヤボンディング作業に時間がかかる。特に接続点
数が多くなるとボンディング時間が長くなり生産効率が
悪くなる。Wire bonding work takes time. Particularly, if the number of connection points is large, the bonding time becomes long and the production efficiency deteriorates.
何らかの要因でトランスファーモールド条件範囲を越
すと、極細金属線7が変形したり最悪の場合には切断し
たりする。If the transfer mold condition range is exceeded for some reason, the ultrafine metal wire 7 is deformed or, in the worst case, cuts.
また半導体素子4上の接続部5においては、極細金属
線7と合金化されないAlが露出しているためAl腐食が生
じ易くなり、信頼性の低下が生じる。Further, in the connection portion 5 on the semiconductor element 4, Al that is not alloyed with the ultrafine metal wire 7 is exposed, so that Al corrosion is likely to occur and the reliability is deteriorated.
TAB法 半導体素子4の接続部5を半導体素子4の内側にくる
ように設計すると、キャリアフィルム基板16のインナー
リード部17の長さlが長くなるため、インナーリード部
17が変形し易くなりインナーリード部を所望の接続部5
に接続できなかったり、インナーリード部17が半導体素
子4の接続部5以外の部分に接触したりする。これを避
けるためには半導体素子4の接続部5を半導体素子4上
の周辺に持ってくる必要が生じ、設計上の制限を受け
る。TAB method When the connecting portion 5 of the semiconductor element 4 is designed to be inside the semiconductor element 4, the inner lead portion 17 of the carrier film substrate 16 has a long length l.
17 is easily deformed, and the inner lead part is connected to the desired connection part 5.
Or the inner lead portion 17 comes into contact with a portion of the semiconductor element 4 other than the connecting portion 5. In order to avoid this, it is necessary to bring the connecting portion 5 of the semiconductor element 4 to the periphery of the semiconductor element 4, which is a design limitation.
TAB法においても、半導体素子4上の接続部のピッチ
寸法は0.09〜0.15mm程度とる必要があり、従ってワイヤ
ボンディング法の問題点で述べたと同様に、接続部数
を増加させることはむずかしくなる。Also in the TAB method, the pitch dimension of the connection portions on the semiconductor element 4 needs to be set to about 0.09 to 0.15 mm. Therefore, similarly to the problem of the wire bonding method, it is difficult to increase the number of connection portions.
キャリアフィルム基板16のインナーリード部17が半導
体素子4の接続部5以外の部分に接触しないようにさせ
るため所望のインナーリード部17の接続形状が要求され
コスト高となる。In order to prevent the inner lead portion 17 of the carrier film substrate 16 from coming into contact with the portion other than the connecting portion 5 of the semiconductor element 4, a desired connection shape of the inner lead portion 17 is required, which results in high cost.
半導体素子4の接続部5とインナーリード部17とを接
続するためには、半導体素子4の接続部5またはインナ
ーリード部17の接続部に金バンプをつけなければならず
コスト高になる。In order to connect the connection portion 5 of the semiconductor element 4 and the inner lead portion 17, it is necessary to attach a gold bump to the connection portion 5 of the semiconductor element 4 or the connection portion of the inner lead portion 17, resulting in a high cost.
CCB法 半導体素子4の接続部5に半田バンプ31を形成させな
ければならないためコスト高になる。CCB method Since the solder bumps 31 must be formed on the connecting portions 5 of the semiconductor element 4, the cost becomes high.
バンプの半田量が多いと隣接する半田バンプとブリッ
ジ(隣接する半田バンプ同士が接触する現象)が生じ、
逆に少ないと半導体素子4の接続部5と基板32の接続部
33が接続しなくなり電気的導通がとれなくなる。すなわ
ち、接続の信頼性が低くなる。さらに、半田量、接続の
半田形状が接続の信頼性に影響する(ろう接技術研究会
技術資料、No.017−'84、ろう接技術研究会発行)とい
う問題がある。If there is a large amount of solder on the bumps, adjacent solder bumps and bridges (a phenomenon in which adjacent solder bumps contact each other) occur,
On the contrary, if the number is small, the connection part 5 of the semiconductor element 4 and the connection part of the substrate 32
33 is not connected and electrical continuity is lost. That is, the reliability of the connection is reduced. Furthermore, there is a problem that the amount of solder and the solder shape of the connection affect the reliability of the connection (Brazing Technology Study Group Technical Data, No.017-'84, Brazing Technology Study Group issue).
このように、半田バンプの量の多少が接続の信頼性に
影響するため半田バンプ31の量のコントロールが必要と
されている。As described above, the amount of solder bumps 31 affects the reliability of the connection, so that it is necessary to control the amount of solder bumps 31.
半田バンプ31が半導体素子4の内側に存在すると接続
が良好に行なわれたか否かの目視検査がむずかしくな
る。If the solder bumps 31 are present inside the semiconductor element 4, it becomes difficult to perform a visual inspection as to whether or not the connection is made well.
半導体素子の放熱特性が悪い(参考資料;Electronic
Packaging Technology 1987、1(Vol.3,No.1)P.66〜7
1 NIKKEI MICRODEVICES,1986.5月.P.97〜108)ため、
放熱特性を良好たらしめるための多大な工夫が必要とさ
れる。Poor heat dissipation characteristics of semiconductor devices (Reference: Electronic
Packaging Technology 1987, 1 (Vol.3, No.1) P.66〜7
1 NIKKEI MICRODEVICES, 1986 May. P.97-108)
A great deal of work is required to achieve good heat dissipation characteristics.
第17図及び第18図に示す技術 絶縁膜71の露出面72と金属材70の露出面73、さらに絶
縁膜71′の露出面72′と金属材70′の露出面73′を平ら
にしなければならず、そのための工数が増し、コスト高
になる。The technique shown in FIGS. 17 and 18 The exposed surface 72 of the insulating film 71 and the exposed surface 73 of the metal material 70, and the exposed surface 72 'of the insulating film 71' and the exposed surface 73 'of the metal material 70' must be flattened. It is necessary to increase the number of man-hours and the cost for that.
絶縁膜71の露出面72と金属材70の露出面73あるいは絶
縁膜71′の露出面72′と金属材70′の露出面73′に凹凸
があると金属材70と金属材70′とが接続しなくなり、信
頼性が低下する。When the exposed surface 72 of the insulating film 71 and the exposed surface 73 of the metal material 70 or the exposed surface 72 'of the insulating film 71' and the exposed surface 73 'of the metal material 70' have irregularities, the metal material 70 and the metal material 70 'are separated from each other. The connection is lost and reliability is reduced.
第19図に示す技術 位置決め後に、接続部76と接続部76′とを加圧して接
続する際に、圧力が一定にはかかりにくいため、接続状
態にバラツキが生じ、その結果、接続部における接触抵
抗値のバラツキが大きくなる。そのため、接続の信頼性
が乏しくなる。また、多量の電流を流すと、発熱等の現
象が生じるので、多量の電流を流したい場合には不向き
である。Technology shown in Fig. 19 When pressure is applied between the connection part 76 and the connection part 76 'after positioning, pressure is less likely to be applied constantly, resulting in variations in the connection state, resulting in contact at the connection part. The variation in resistance value increases. Therefore, the reliability of the connection becomes poor. Further, when a large amount of current is passed, a phenomenon such as heat generation occurs, which is not suitable when a large amount of current is desired to be passed.
圧力が一定にかけられたとしても、異方性導電膜78の
導電粒子79の配列により抵抗値のバラツキが大きくな
る。そのため、接続の信頼性に乏しくなる。また、大電
流容量が要求される接続には不向きである。Even if a constant pressure is applied, the dispersion of the resistance value increases due to the arrangement of the conductive particles 79 of the anisotropic conductive film 78. Therefore, the reliability of the connection becomes poor. Moreover, it is not suitable for a connection that requires a large current capacity.
隣接する接続部のピッチ(接続部に隣接する接続部中
心間の距離)を狭くすると隣接する接続部の間の抵抗値
が小さくなることから高密度な接続には不向きである。If the pitch of the adjacent connecting portions (the distance between the centers of the connecting portions adjacent to the connecting portions) is narrowed, the resistance value between the adjacent connecting portions becomes small, which is not suitable for high-density connection.
回路基材75,75′の接続部76、76′の出っ張り量h1の
バラツキにより抵抗値が変化するため、h1バラツキ量を
正確に押さえることが必要である。Since the resistance value changes due to the variation in the protrusion amount h1 of the connection portions 76 and 76 'of the circuit substrates 75 and 75', it is necessary to accurately suppress the variation amount of h1.
さらに異方導電膜を、半導体素子と回路基材の接続、
また、第1の半導体素子と第2の半導体素子との接続に
使用した場合、上記〜の欠点の他、半導体素子の接
続部にバンブを設けなければならなくなり、コスト高に
なるという欠点が生じる。Furthermore, an anisotropic conductive film is used to connect the semiconductor element to the circuit substrate,
Further, when it is used for connecting the first semiconductor element and the second semiconductor element, in addition to the above-mentioned drawbacks, a bump must be provided at the connecting portion of the semiconductor element, resulting in a high cost. .
第20図に示す技術 加圧が必要であり、加圧治具が必要となる。Technology shown in Fig. 20 Pressurization is required, and a pressure jig is required.
エラスチックコネクタ83の金属線82と第1の回路基材
75の接続部76また、第2の回路基材75′の接続部76′と
の接触抵抗は加圧力及び表面状態により変化するため接
続の信頼性は乏しい。The metal wire 82 of the elastic connector 83 and the first circuit board
The contact resistance of the connection part 75 of the second circuit substrate 75 'with the connection part 76' of the second circuit substrate 75 'varies depending on the pressing force and the surface condition, so that the connection reliability is poor.
エラスチックコネクタ83の金属線82は剛体であるた
め、加圧力が大であるとエラスチックコネクタ83、第1
の回路基材75、第2の回路基材75′の表面が破損する可
能性が大きい。また、加圧力が小であると、接続の信頼
性が乏しくなる。Since the metal wire 82 of the elastic connector 83 is a rigid body, if the pressing force is large, the elastic connector 83, the first
There is a high possibility that the surfaces of the circuit base material 75 and the second circuit base material 75 'will be damaged. Further, if the applied pressure is small, the reliability of the connection becomes poor.
さらに、回路基材75,75′の接続部76,76′の出っ張り
量h2、またエラスチックコネクタ83の金属線82の出っ張
り量h3とそのバラツキが抵抗値変化及び破損に影響を及
ぼすので、バラツキを少なくする工夫が必要とされる。Further, the protrusion amount h2 of the connecting portions 76, 76 'of the circuit board 75, 75', and the protrusion amount h3 of the metal wire 82 of the elastic connector 83 and its variation affect the resistance value change and damage. A device to reduce the number is required.
さらに、エラスチックコネクターを半導体素子と回路
基材の接続、また、第1の半導体素子と第2の半導体素
子との接続に使用した場合、〜と同様な欠点を生ず
る。Further, when the elastic connector is used for connecting the semiconductor element and the circuit substrate, and for connecting the first semiconductor element and the second semiconductor element, the same drawbacks as the above occur.
本発明は、以上のような問題点をことごとく解決し、
高密度で高信頼性でしかも、低コストの新電気回路部材
を提案するものであり、従来の接続方式を置き代え得る
ことはもちろん、高密度多点接続が得られ、熱等諸特性
を向上させ得るものである。The present invention solves all the above problems,
It proposes a new electrical circuit member with high density, high reliability, and low cost. Not only can the conventional connection method be replaced, but high density multi-point connection can be obtained and various characteristics such as heat can be improved. It can be done.
[問題点を解決するための手段] 本発明は、接続部を有する第1の電気回路部品と、接
続部を有する第2の電気回路部品とを、両電気回路部品
を電気的に接続するための電気的接続部材を両者の間に
介在させて、両電気回路部品の接続部において接続して
構成される電気回路部材において、 該電気的接続部材は、金属または合金よりなる複数の
金属部材を、該金属部材の一端を第1の電気部品側に露
出させて、一方、該金属部材の他端を該第2の電気回路
部品側に露出させて、それぞれの金属部材同士が電気的
に絶縁されるように、絶縁体中に埋設して構成されてお
り、かつ、該絶縁体には無機材料よりなる粉体又は繊維
の一方又は両方が分散しており、 第1の電気回路部品の接続部と第1の電気回路部品側
に露出した金属部材の一端とを合金化することにより接
続し、かつ、第2の電気回路部品の接続部と第2の電気
回路部品側に露出した金属部材の一端とを合金化するこ
とにより接続したことを特徴とする電気回路部材にその
要旨を有する。[Means for Solving the Problems] The present invention electrically connects a first electric circuit component having a connecting portion and a second electric circuit component having a connecting portion to both electric circuit components. In the electric circuit member configured by interposing the electric connecting member of 1 between the two and connecting at the connection portion of both electric circuit components, the electric connecting member is a plurality of metal members made of metal or alloy. , Exposing one end of the metal member to the first electric component side and exposing the other end of the metal member to the second electric circuit component side so that the respective metal members are electrically insulated from each other. As described above, one or both of powder and fibers made of an inorganic material are dispersed in the insulator, and the first electric circuit component is connected to the insulator. Section and one end of the metal member exposed on the side of the first electric circuit component An electric circuit characterized in that the connection is made by converting into gold and the connection portion of the second electric circuit component and one end of the metal member exposed on the second electric circuit component side are alloyed to be connected. It has its gist as a member.
本発明における電気回路部品としては、例えば、半導
体素子、樹脂回路基板、セラミック基板、金属基板等の
回路基板(以下単に回路基板ということがある)、リー
ドフレーム等があげられる。すなわち、第1の電気回路
部品としてこれらの中のいずれかの部品を用い、第2の
電気回路部品としてこれらの中のいずれかの部品を用い
ればよい。Examples of the electric circuit component in the present invention include a circuit board such as a semiconductor element, a resin circuit board, a ceramic board, a metal board (hereinafter may be simply referred to as a circuit board), and a lead frame. That is, any of these components may be used as the first electrical circuit component, and any of these components may be used as the second electrical circuit component.
電気回路部品として接続部を有する部品が本発明の対
象となる。接続部の数は問わないが、接続部の数が多け
れば多いほど本発明の効果が顕著となる。A component having a connecting portion as an electric circuit component is an object of the present invention. The number of connecting portions is not limited, but the effect of the present invention becomes more remarkable as the number of connecting portions increases.
また、接続部の存在位置も問わないが、電気回路部品
の内部に存在するほど本発明の効果が顕著となる。Further, the location of the connection portion does not matter, but the effect of the present invention becomes more remarkable as the location inside the electric circuit component.
本発明では第1の電気回路部品と第2の電気回路部品
とを電気的接続部材を用いて接続する。In the present invention, the first electric circuit component and the second electric circuit component are connected using the electric connection member.
本発明に係る電気的接続部材は、絶縁体中に複数の金
属部材を埋設して構成されている。金属部材同士はそれ
ぞれ絶縁体により絶縁されており、また、金属部材の一
端は第1の電気回路部品側に露出しており、他の一端は
第2の電気回路部品側に露出している。さらに、該絶縁
体には無機材料よりなる粉体又は繊維の一方又は両方が
分散している。The electrical connection member according to the present invention is configured by embedding a plurality of metal members in an insulator. The metal members are insulated from each other by an insulator, one end of the metal member is exposed to the first electric circuit component side, and the other end is exposed to the second electric circuit component side. Further, one or both of powder and fibers made of an inorganic material are dispersed in the insulator.
ここで、金属部材の材質としては、金が好ましいが、
金以外の任意の金属あるいは合金を使用することもでき
る。例えば、Cu,Al,Sn,Pb−Sn等の金属あるいは合金が
あげられる。Here, gold is preferable as the material of the metal member,
Any metal or alloy other than gold can also be used. For example, Cu, Al, Sn, Pb-Sn, and other metals or alloys can be used.
さらに、金属部材の断面は、円形、四角形その他任意
の形状とすることができる。Furthermore, the cross section of the metal member can be circular, square, or any other shape.
また、金属部材の太さは特に限定されない。電気回路
部品の接続部のピッチを考慮して、例えば20μmφ以上
あるいは20μmφ以下にしてもよい。Further, the thickness of the metal member is not particularly limited. The pitch may be 20 μmφ or more or 20 μmφ or less in consideration of the pitch of the connection portion of the electric circuit component.
なお、金属部材の露出部は絶縁体と同一面としてもよ
いし、また、絶縁体の面から突出させてもよい。この突
出は片面のみでもよいし両面でもよい。さらに突出させ
た場合はバンプ状にしてもよい。The exposed portion of the metal member may be flush with the insulator, or may be protruded from the insulator surface. This protrusion may be on one side or both sides. If it is further projected, it may be formed into a bump shape.
また、金属部材の間隔は、電気回路部品の接続部同士
の間隔と同一間隔としてもよいし、それより狭い間隔と
してもよい。狭い間隔とした場合には電気回路部品と電
気的接続部材との位置決めを要することなく、電気回路
部品と電気的接続部材とを接続することが可能となる。The spacing between the metal members may be the same as the spacing between the connecting portions of the electric circuit component, or may be narrower than that. When the distance is narrow, the electric circuit component and the electric connecting member can be connected without positioning the electric circuit component and the electric connecting member.
また、金属部材は絶縁体中に垂直に配する必要はな
く、第1の電気回路部品側から第2の電気回路部品側に
向かって斜行していてもよい。Further, the metal member does not need to be vertically arranged in the insulator, and may be slanted from the first electric circuit component side toward the second electric circuit component side.
さらに電気的接続部材は、1層あるいは2層以上の多
層からなるものでもよい。Further, the electrical connecting member may be composed of one layer or a multilayer of two or more layers.
本発明においては、絶縁体には無機材料よりなる粉体
又は繊維の一方又は両方が分散している。In the present invention, one or both of powder and fibers made of an inorganic material are dispersed in the insulator.
ここにおいては、無機材料とは、金属材料、有機材料
以外の材料をいい、例えば、SiC,BeO,B2C,TaC,TiB2,CrB
2,TiN,BP,BN,AlN,Si3N4,SiO2等のセラミック、ダイヤモ
ンド、C,B、ガラス等のものがあげられる。これらの無
機材料よりなる粉体又は繊維の1種又は2種以上を使用
すればよい。また、粉体又は繊維の一方のみを使用して
もよいし、両方を使用してもよい。Here, the inorganic material means a material other than a metal material and an organic material, for example, SiC, BeO, B 2 C, TaC, TiB 2 , CrB.
Examples thereof include ceramics such as 2 , 2 , TiN, BP, BN, AlN, Si 3 N 4 and SiO 2 , diamond, C, B and glass. One or more kinds of powders or fibers made of these inorganic materials may be used. Moreover, only one of the powder and the fiber may be used, or both may be used.
分散せしめる粉体及び繊維の大きさ、形状、また、絶
縁体中における分散位置、数量は、粉体又は繊維のため
に、絶縁体中に埋設されている金属部材同士が接触・短
絡したり、切断したりしない範囲内ならば任意である。
ただ、粉体及び繊維の大きさとしては、隣接する金属部
材間の距離よりも小さいことが好ましい。すなわち、金
属部材同士が、粉体及び繊維を介してでも接触しない状
態が好ましい。また、粉体、繊維は絶縁体の外部に露出
してもよいし、露出しなくともよい。また、粉体、繊維
同士は接触してもよいし、接触していなくともよい。The size and shape of the powder and fibers to be dispersed, and the distribution position and number in the insulator, the metal members embedded in the insulator may contact or short-circuit due to the powder or the fiber, It is arbitrary as long as it is not cut.
However, the size of the powder and the fiber is preferably smaller than the distance between the adjacent metal members. That is, it is preferable that the metal members do not come into contact with each other even through the powder and the fiber. Further, the powder and fibers may or may not be exposed to the outside of the insulator. Further, the powder and the fibers may or may not be in contact with each other.
電気的接続部材の絶縁体は絶縁性物質ならば特に限定
されない。例えば絶縁性の樹脂を用いればよい。さら
に、樹脂を用いる場合には樹脂の種類も問わない。熱硬
化性樹脂、熱可塑性樹脂のいずれでもよい。例えば、ポ
リイミド樹脂、ポリフェニレンサルファイド樹脂、ポリ
エーテルサルフォン樹脂、ポリエーテルイミド樹脂、ポ
リサルフォン樹脂、シリコーン樹脂、フッ素樹脂、ポリ
カーボネート樹脂、ポリジフェニールエーテル樹脂、ポ
リベンジルイミダゾール樹脂、フェノール樹脂、尿素樹
脂、メラミン樹脂、アルキッド樹脂、エポキシ樹脂、ポ
リアミドイミド樹脂、ポリプロプレン樹脂、ポリ塩化ビ
ニル樹脂、ポリスチレン樹脂その他の樹脂を使用するこ
とができる。The insulator of the electrical connection member is not particularly limited as long as it is an insulating substance. For example, an insulating resin may be used. Furthermore, when a resin is used, the type of resin does not matter. Either a thermosetting resin or a thermoplastic resin may be used. For example, polyimide resin, polyphenylene sulfide resin, polyether sulfone resin, polyether imide resin, polysulfone resin, silicone resin, fluororesin, polycarbonate resin, polydiphenyl ether resin, polybenzyl imidazole resin, phenol resin, urea resin, melamine resin , Alkyd resin, epoxy resin, polyamideimide resin, polypropylene resin, polyvinyl chloride resin, polystyrene resin and other resins can be used.
絶縁体の材料として上記樹脂を使用する場合、粉体又
は繊維を絶縁体に分散させるには、樹脂中に粉体又は繊
維を添加し、樹脂を攪拌すればよい。もちろん、かかる
方法によることなく、他の任意の方法で絶縁体中に粉体
又は繊維を分散せしめてもよい。When the above resin is used as the material of the insulator, the powder or fiber may be dispersed in the insulator by adding the powder or fiber to the resin and stirring the resin. Of course, the powder or the fibers may be dispersed in the insulator by any other method than the above method.
なお、これらの樹脂の中から、熱伝導性のよい樹脂を
使用すれば、半導体素子が熱を持ってもその熱を樹脂を
介して放熱することができるのでより好ましい。さら
に、樹脂として、回路基板と同じかあるいは同程度の熱
膨張率を有するものを選択すれば、熱膨張・熱収縮に基
づく、装置の信頼性の低下を一層防止することが可能と
なる。It is more preferable to use a resin having good thermal conductivity from these resins, because even if the semiconductor element has heat, the heat can be radiated through the resin. Furthermore, if a resin having the same or similar coefficient of thermal expansion as the circuit board is selected as the resin, it is possible to further prevent the deterioration of the reliability of the device due to the thermal expansion / contraction.
本発明ではさらに、第1の電気回路部品の接続部と第
1の電気回路部品側に露出した電気接続部材の金属部材
の一端とを合金化することにより接続し、かつ、第2の
電気回路部品の接続部と第2の電気回路部品側に露出し
た電気接続部材の金属部材の一端とを合金化することに
より接続する。すなわち、本発明では、第1の電気回路
部品と第2の電気回路部品との両方ともに合金化する。In the present invention, further, the connection portion of the first electric circuit component and the one end of the metal member of the electric connection member exposed on the first electric circuit component side are connected by alloying, and the second electric circuit is connected. The connection portion of the component and the one end of the metal member of the electric connection member exposed on the second electric circuit component side are connected by alloying. That is, in the present invention, both the first electric circuit component and the second electric circuit component are alloyed.
なお、合金化方法としては、例えば、それぞれ対応す
る接続部を接触させた後、適宜の温度において加熱すれ
ばよい。加熱により、接続部において原子の拡散等が起
こり、接続部表面に固溶体あるいは金属間化合物よりな
る層が形成され、接続部同士が合金化される。なお、電
気的接続部材の金属部材にAuを使用し、電気回路部品の
接続部にAlを使用した場合には、200〜350℃の加熱温度
が好ましい。As an alloying method, for example, heating may be performed at an appropriate temperature after the corresponding connecting portions are brought into contact with each other. The heating causes diffusion of atoms and the like in the connection portion, a layer made of a solid solution or an intermetallic compound is formed on the surface of the connection portion, and the connection portions are alloyed. When Au is used for the metal member of the electrical connecting member and Al is used for the connecting portion of the electric circuit component, the heating temperature of 200 to 350 ° C. is preferable.
[作用] 本発明では、上述した電気的接続部材を使用している
ので、電気回路部品の接続部を内部に配置することも可
能となり、接続部の数を増加させることができ、ひいて
は高密度化が可能となる。[Operation] In the present invention, since the above-described electrical connection member is used, it is possible to dispose the connection portion of the electric circuit component inside, so that the number of connection portions can be increased, which in turn increases the density. Can be realized.
また、電気的接続部材は薄くすることが可能であり、
この面からも薄型化が可能となる。Also, the electrical connection member can be thin,
From this aspect, it is possible to reduce the thickness.
さらに、電気的接続部材に使用する金属部材の量は少
ないため、たとえ、高価な金を金属部材として使用した
としてもコストが安いものとなる。Furthermore, since the amount of the metal member used for the electrical connection member is small, the cost is low even if expensive gold is used as the metal member.
本発明では、電気回路部品の両方が、電気接続部材を
介して合金化されており電気回路部品同士が強固(強度
的に強く)かつ確実に接続されるので、機械的に強く、
不良率の極めて低い電気回路部材を得ることができる。In the present invention, both of the electric circuit parts are alloyed via the electric connecting member and the electric circuit parts are firmly (strongly strong) and surely connected to each other, so that they are mechanically strong,
An electric circuit member having an extremely low defect rate can be obtained.
また、電気回路部品の両方を、電気的接続部材を介し
て合金化するので、電気回路部材の作成工程中及び作成
後において、治具等を使用して電気回路部品を保持する
必要がなく、電気回路部材の作成及び作成後の管理が容
易である。Further, since both of the electric circuit parts are alloyed via the electric connection member, it is not necessary to hold the electric circuit parts by using a jig or the like during and after the process of forming the electric circuit member, It is easy to create an electric circuit member and manage it after creation.
電気回路部品の両方が、電気的接続部材を介して合金
化されているので、電気回路部品相互の接触抵抗が一方
のみを合金化した場合に比べてより小さくなる。Since both of the electric circuit components are alloyed via the electrical connecting member, the contact resistance between the electric circuit components is smaller than that in the case where only one of them is alloyed.
本発明においては、電気的接続部材の絶縁体中に粉体
又は繊維が分散しているので、第1の電気回路部品から
第2の電気回路部品への熱伝導性、また、第2の電気回
路部品から第1の電気回路部品への熱伝導性が良くな
る。つまり、電気的接続部材の熱伝導性が良好であり、
仮に、第1の電気回路部品として発熱量の大きな電気回
路部品を使用し、第2電気回路部品として熱影響の少な
い電気回路部品を選択したとすると、第1の電気回路部
品から発熱した熱は、電気的接続部材を介して第2電気
回路部品へといち早く伝導され、この熱は第2電気回路
部品から放熱される。従って、放熱特性の良好な電気回
路部材を得ることが可能となる。In the present invention, since the powder or fibers are dispersed in the insulator of the electrical connection member, the thermal conductivity from the first electrical circuit component to the second electrical circuit component and the second electrical circuit component are improved. The thermal conductivity from the circuit component to the first electric circuit component is improved. That is, the thermal conductivity of the electrical connection member is good,
If an electric circuit component having a large heat generation amount is used as the first electric circuit component and an electric circuit component having a small heat effect is selected as the second electric circuit component, the heat generated from the first electric circuit component is , Is quickly conducted to the second electric circuit component through the electric connection member, and this heat is radiated from the second electric circuit component. Therefore, it becomes possible to obtain an electric circuit member having excellent heat dissipation characteristics.
[実施例] (第1実施例) 本発明の第1実施例を第1図及び第2図に基づいて説
明する。[Embodiment] (First Embodiment) A first embodiment of the present invention will be described with reference to FIGS. 1 and 2.
本実施例では、接続部102を有する第1の電気回路部
品である回路基板101と、接続部105を有する第2の電気
回路部品である回路基板104とを、両回路基板101,104を
電気的に接続するための電気的接続部材125を両者の間
に介在させて、両回路基板101,104の接続部102,105にお
いて接続して構成される電気回路部材において、 該電気的接続部材125は、金属又は合金よりなる複数
の金属部材107を、それぞれの金属部材107同士を電気的
に絶縁し、かつ、該金属部材107の一端を第1の回路基
板101側に露出させて、一方、該金属部材107の他端を該
第2の回路基板104側に露出させて、絶縁体111中に埋設
されて構成されており、かつ、絶縁体111には複数の無
機材料よりなる粉体又は繊維(図示せず)の一方又は両
方が分散しており、 第1図の回路基板101の接続部102と第1の回路基板10
1側に露出した金属部材107の一端とを合金化することに
より接続し、かつ、第2の回路基板104の接続部105と第
2の回路基板104側に露出した金属部材107の一端とを合
金化することにより接続してある。In this embodiment, a circuit board 101, which is a first electric circuit component having a connecting portion 102, and a circuit board 104, which is a second electric circuit component having a connecting portion 105, are electrically connected to each other. In an electric circuit member configured by interposing an electric connecting member 125 for connection between the two, and connecting at the connecting portions 102, 105 of both circuit boards 101, 104, the electric connecting member 125 is made of metal or alloy. The plurality of metal members 107 are electrically insulated from each other, and one end of the metal members 107 is exposed to the first circuit board 101 side, while the other metal members 107 are The end is exposed to the side of the second circuit board 104 and is embedded in the insulator 111, and the insulator 111 is composed of powder or fibers made of a plurality of inorganic materials (not shown). One or both of them are dispersed, and are connected to the connecting portion 102 of the circuit board 101 of FIG. Circuit board 10 of the
The one end of the metal member 107 exposed on the 1 side is connected by alloying, and the connecting portion 105 of the second circuit board 104 and the one end of the metal member 107 exposed on the second circuit board 104 side are connected. They are connected by alloying.
以下に本実施例をより詳細に説明する。 This embodiment will be described in more detail below.
まず、電気的接続部材125の一製造例を説明しつつ電
気的接続部材125を説明する。First, the electrical connection member 125 will be described while describing an example of manufacturing the electrical connection member 125.
第2図に一製造例を示す。 FIG. 2 shows one manufacturing example.
まず、第2図(a)に示すように、20μmφの金等の
金属あるいは合金よりなる金属線121を、ピッチ40μm
として棒122に巻き付け、巻き付け後、ポリイミド等の
樹脂123中に上記金属線121を埋め込む。埋め込み前に樹
脂123中にSia2よりなる粉体を配合し、攪拌して樹脂中
に粉体を分散させる。埋め込み後上記樹脂123を硬化さ
せる。硬化した樹脂123は絶縁体となる。その後、点線1
24の位置でスライス切断し、電気的接部材125を作成す
る。このようにして作成された電気的接続部材125を第
2図(b),(c)に示す。First, as shown in FIG. 2 (a), a metal wire 121 made of a metal or alloy such as gold having a diameter of 20 μm is provided with a pitch of 40 μm.
As a wire, the metal wire 121 is embedded in a resin 123 such as polyimide after winding. Before embedding, a powder of Sia 2 is mixed in the resin 123 and stirred to disperse the powder in the resin. After embedding, the resin 123 is cured. The cured resin 123 becomes an insulator. Then the dotted line 1
Slice cutting is performed at the position of 24 to make the electrical contact member 125. The electrical connection member 125 thus produced is shown in FIGS. 2 (b) and 2 (c).
なお、本例では、樹脂を攪拌して粉体を分散せしめた
が、他の方法により粉体を分散せしめてもよい。In this example, the resin is stirred to disperse the powder, but the powder may be dispersed by another method.
また、本例では、樹脂123中にSiO2よりなる粉体を分
散せしめたが、SiO2以外の無機材料よりなる粉体もしく
は繊維を分散せしめてもよい。Further, in the present example, the powder made of SiO 2 is dispersed in the resin 123, but powder or fibers made of an inorganic material other than SiO 2 may be dispersed.
このように作成された電気的接続部材125において、
金属線121が金属部材107を構成し、樹脂123が絶縁体111
を構成する。In the electrical connection member 125 created in this way,
The metal wire 121 constitutes the metal member 107, and the resin 123 is the insulator 111.
Is configured.
この電気的接続部材125においては金属部材となる金
属線121同士は樹脂123により電気的に絶縁されている。
また、金属線121の一端は回路基板101側に露出し、他端
は回路基板104側に露出している。この露出している部
分はそれぞれ回路基板101,104との接続部108,109とな
る。In the electrical connection member 125, the metal wires 121, which are metal members, are electrically insulated by the resin 123.
Further, one end of the metal wire 121 is exposed on the circuit board 101 side, and the other end is exposed on the circuit board 104 side. The exposed portions become connection portions 108 and 109 with the circuit boards 101 and 104, respectively.
次に、第1の回路基板101、電気的接続部材125、第2
の回路基板104を用意する。本例で使用する回路基板10
1,104は、第1図に示すように、その内部に多数の接続
部102,105を有している。Next, the first circuit board 101, the electrical connection member 125, the second
The circuit board 104 of is prepared. Circuit board 10 used in this example
As shown in FIG. 1, the 1,104 has a large number of connecting portions 102,105 therein.
なお、第1の回路基板101の接続部102は、第2の回路
基板104の接続部105及び電気的接続部材125の接続部10
8,109に対応する位置に金属が露出している。The connection portion 102 of the first circuit board 101 is the connection portion 105 of the second circuit board 104 and the connection portion 10 of the electrical connection member 125.
Metal is exposed at the positions corresponding to 8,109.
第1の回路基板101の接続部102と、電気的接続部材12
5の接続部108とを、又は、第2の回路基板104の接続部1
05と電気的接続部材125の接続部109が対応するように位
置決めを行ない、位置決め後、両方を合金化して接続す
る。The connecting portion 102 of the first circuit board 101 and the electrical connecting member 12
5 or the connecting portion 1 of the second circuit board 104.
Positioning is performed so that 05 and the connection portion 109 of the electrical connection member 125 correspond, and after positioning, both are alloyed and connected.
ここで、上記第1の回路基板101、電気的接続部材12
5、第2の回路基板104を接続するには次の3方式が存在
するが、そのいずれの方式によってもよい。Here, the first circuit board 101, the electrical connection member 12
5. The following three methods exist for connecting the second circuit board 104, but any of these methods may be used.
第1の回路基板101、電気的接続部材125、第2の回路
基板104を位置決めした後、第1の回路基板101の接続部
102と電気的接続部材125の接続部108とを、及び第2の
回路基板104の接続部105と電気的接続部材125の接続部1
09とを同時に合金化して接 第1の回路基板101と電気的接続部材125とを位置決め
し、第1の回路基板101の接続部102と電気的接続部材12
5の接続部108とを合金化して接続した後、第2の回路基
板104を位置決めし、電気接続部材125の接続部109と第
2の回路基板104の接続部105を合金化して接続する方
法。After positioning the first circuit board 101, the electrical connection member 125, and the second circuit board 104, the connection portion of the first circuit board 101
102 and the connecting portion 108 of the electrical connecting member 125, and the connecting portion 1 5 of the second circuit board 104 and the electrical connecting member 125.
The first circuit board 101 and the electrical connection member 125 are positioned by alloying with 09 at the same time, and the connection portion 102 of the first circuit board 101 and the electrical connection member 12 are positioned.
A method of alloying and connecting the connection part 108 of 5 and then positioning the second circuit board 104, and alloying and connecting the connection part 109 of the electrical connection member 125 and the connection part 105 of the second circuit board 104. .
第2の回路基板104と電気的接続部材125とを位置決め
し、第2の回路基板104の接続部105と電気的接続部材12
5の接続部109とを合金化して接続した後、第1の回路基
板101を位置決めし、電気的接続部材125の接続部108と
第1の回路基板101の接続部102を合金化して接続する方
法。The second circuit board 104 and the electrical connection member 125 are positioned, and the connection portion 105 of the second circuit board 104 and the electrical connection member 12 are positioned.
After alloying and connecting with the connection portion 109 of 5, the first circuit board 101 is positioned, and the connection portion 108 of the electrical connection member 125 and the connection portion 102 of the first circuit board 101 are alloyed and connected. Method.
以上のようにして作成した電気回路部材につきその接
続部の接続性を調べたところ高い信頼性をもって接続さ
れていた。When the connectivity of the electrical circuit member produced as described above was examined, it was found to be connected with high reliability.
また、加熱特性も良好であった。 The heating characteristics were also good.
(第2実施例) 第3図に第2実施例を示す。(Second Embodiment) FIG. 3 shows a second embodiment.
本例は、接続部52を有する第1の電気回路部品として
回路基板51を、第2の電気回路部品として内部に多数の
接続部5を有する半導体素子4を使用した。In this example, the circuit board 51 is used as the first electric circuit component having the connecting portion 52, and the semiconductor element 4 having a large number of connecting portions 5 therein is used as the second electric circuit component.
合金化は、半導体素子4の接続部5及び回路基板51の
接続部52と、無機材料よりなる粉体又は繊維の一方又は
両方が分散する電気的接続部材125の接続部54との間が
で行なった。The alloying is performed between the connection portion 5 of the semiconductor element 4 and the connection portion 52 of the circuit board 51 and the connection portion 54 of the electrical connection member 125 in which one or both of the powder and the fibers made of an inorganic material are dispersed. I did.
なお、無機材料よりなる粉体又は繊維の一方又は両方
が分散する電気的接続部材125としては半導体素子4に
対応する寸法のものを使用した。As the electrical connection member 125 in which one or both of the powder and the fiber made of an inorganic material are dispersed, one having a size corresponding to the semiconductor element 4 was used.
合金化して接続後は回路基板51の下面にリードフレー
ム55を接続した。After alloying and connection, the lead frame 55 was connected to the lower surface of the circuit board 51.
他の点は第1実施例と同様である。 The other points are similar to those of the first embodiment.
本例においても接続部は高い信頼性を持って接続され
ていた。Also in this example, the connection portion was connected with high reliability.
また、放熱特性も良好であった。 Also, the heat dissipation characteristics were good.
(第3実施例) 第4図に第3実施例を示す。(Third Embodiment) FIG. 4 shows a third embodiment.
本例は、第1の電気回路部品が半導体素子4であり、
第2の電気回路部品が回路基板51である例である。In this example, the first electric circuit component is the semiconductor element 4,
This is an example in which the second electric circuit component is the circuit board 51.
なお、接続後は回路基板51の上面にリードフレーム1
を接続し、封止材63により封止した。After connection, the lead frame 1 is placed on the upper surface of the circuit board 51.
Were connected and sealed with a sealing material 63.
他の点は第1実施例と同様である。 The other points are similar to those of the first embodiment.
本例においても接続部は高い信頼性を持って接続され
ていた。Also in this example, the connection portion was connected with high reliability.
また、放熱特性も良好であった。 Also, the heat dissipation characteristics were good.
(第4実施例) 第5図に第4実施例を示す。(Fourth Embodiment) FIG. 5 shows a fourth embodiment.
本例は、第1の電気回路部品が半導体素子4′であ
り、第2の電気回路部品が半導体素子4である例であ
り、本例では、電気的接続部材として半導体素子4に対
応した寸法のものを使用し、リードフレーム1を電気的
接続部材125の第1の半導体素子4′側に露出した金属
部材に接続している。This example is an example in which the first electric circuit component is the semiconductor element 4'and the second electric circuit component is the semiconductor element 4. In this example, the dimensions corresponding to the semiconductor element 4 are used as the electrical connection members. The lead frame 1 is connected to the metal member exposed on the first semiconductor element 4 ′ side of the electrical connection member 125.
他は第3実施例と同様である。 Others are the same as the third embodiment.
本例においても接続部は高い信頼性を持って接続され
ていた。Also in this example, the connection portion was connected with high reliability.
また、放熱特性も良好であった。 Also, the heat dissipation characteristics were good.
(第5実施例) 第6図に第5実施例を示す。(Fifth Embodiment) FIG. 6 shows a fifth embodiment.
第5実施例は、第1の電気回路部品、第2の電気回路
部品として、接続部以外の部分が絶縁膜103,106で覆わ
れている回路基板101,104を使用している例である。The fifth embodiment is an example in which, as the first electric circuit component and the second electric circuit component, circuit boards 101 and 104 in which portions other than the connection portions are covered with insulating films 103 and 106 are used.
また、電気的接続部材としては第7図に示すものを使
用した。すなわち、第7図に示す絶縁体111中に無機材
料よりなる粉体又は繊維の一方又は両方が分散する電気
的接続材料125は、金属部材107の露出している部分が樹
脂絶縁体111の面から突出している。このような電気的
接続部材125の作成は、例えば、次の方法によればよ
い。As the electrical connecting member, the one shown in FIG. 7 was used. That is, in the electrical connection material 125 in which one or both of the powder and the fibers made of an inorganic material are dispersed in the insulator 111 shown in FIG. Protruding from. The electrical connection member 125 as described above may be produced, for example, by the following method.
まず、第1実施例で述べた方法により、第2図
(b),(c)に示す電気的接続部材を用意する。次に
この電気的接続部材の両面を、金属線121が、ポリイミ
ド樹脂123から10μm程度突出するまでエッチングすれ
ばよい。First, the electrical connection member shown in FIGS. 2B and 2C is prepared by the method described in the first embodiment. Next, both surfaces of this electrical connection member may be etched until the metal wire 121 protrudes from the polyimide resin 123 by about 10 μm.
なお、本実施例では金属線121の突出量を10μmとし
たが、いかなる量でもよい。Although the amount of protrusion of the metal wire 121 is 10 μm in this embodiment, any amount may be used.
また、金属線121を突出させる方法としてはエッチン
グに限らず、他の化学的な方法又は機械的な方法を使用
してもよい。Further, the method of projecting the metal wire 121 is not limited to etching, and other chemical method or mechanical method may be used.
他の点は第1実施例と同様である。 The other points are similar to those of the first embodiment.
なお、突出部を、電気的接続部材125を金属線121の位
置に凹部を持った型に挟み込み、金属線121の突起126を
つぶすことにより第8図に示すようなバンプ150を形成
してもよい。この場合金属線121は絶縁体111から脱落し
にくくなる。It should be noted that the protruding portion may be sandwiched in a mold having a recess at the position of the metal wire 121 and the protrusion 126 of the metal wire 121 may be crushed to form a bump 150 as shown in FIG. Good. In this case, the metal wire 121 is less likely to fall off the insulator 111.
なお、本例でも、金属線121が金属部材107を構成し、
さらに、樹脂123が絶縁体111を構成する。Also in this example, the metal wire 121 constitutes the metal member 107,
Further, the resin 123 constitutes the insulator 111.
なお、バンプを作成するのには突起を熱で溶融させ、
バンプを作成してもよいし、他のいかなる方法でもよ
い。In order to create bumps, the protrusions are melted by heat,
Bumps may be created or any other method.
本例においても接続部は高い信頼性を持って接続され
ていた。Also in this example, the connection portion was connected with high reliability.
また、放熱特性も良好であった。 Also, the heat dissipation characteristics were good.
(第6実施例) 第9図に第6実施例を示す。(Sixth Embodiment) FIG. 9 shows a sixth embodiment.
本例は、第1の電気回路部品として半導体素子4を使
用し、第2の電気部品としてリードフレーム1を使用し
た例である。In this example, the semiconductor element 4 is used as the first electric circuit component, and the lead frame 1 is used as the second electric component.
他の点は第5実施例と同様である。 The other points are the same as in the fifth embodiment.
本例においても接続部は高い信頼性を持って接続され
ていた。Also in this example, the connection portion was connected with high reliability.
また、放熱特性も良好であった。 Also, the heat dissipation characteristics were good.
(第7実施例) 第10図に第7実施例を示す。(Seventh Embodiment) FIG. 10 shows a seventh embodiment.
本例においては、電気的接続部材125は、第5実施例
に示した電気的接続部材と異なる。すなわち、本例の電
気的接続部材125においては、金属部材同士のピッチが
第5実施例で示したものよりも狭くなっている。すなわ
ち、本例では、第1の回路基板接続部の間隔よりも狭い
間隔に金属部材107同士のピッチを設定してある。In this example, the electrical connecting member 125 is different from the electrical connecting member shown in the fifth embodiment. That is, in the electrical connection member 125 of this example, the pitch between the metal members is narrower than that shown in the fifth embodiment. That is, in this example, the pitch between the metal members 107 is set to be narrower than the distance between the first circuit board connecting portions.
つまり、第5実施例では、第1の回路基板101と第2
の回路基板104との接続位置に電気的接続部材125の接続
位置を配設したため、電気的接続部材125の位置決めが
必要であったが、本例では、第1の回路基板101と第2
の回路基板104との位置決めは必要であるが、電気的接
続部材125との位置決めは不要となる。そのため、第1
の回路基板101と第2の回路基板104の接続寸法(d11,P1
1)と電気的接続部材の接続寸法(d12,P12)を適切な値
に選ぶことにより位置決めなしで接続することも可能で
ある。That is, in the fifth embodiment, the first circuit board 101 and the second circuit board 101
Since the connection position of the electrical connection member 125 is arranged at the connection position with the circuit board 104, it is necessary to position the electrical connection member 125. However, in this example, the first circuit board 101 and the second
Although the positioning with respect to the circuit board 104 is necessary, the positioning with the electrical connection member 125 is not necessary. Therefore, the first
Dimensions of the circuit board 101 and the second circuit board 104 (d11, P1
It is also possible to connect without positioning by selecting appropriate values for the connection dimensions (d12, P12) of 1) and the electrical connection member.
本例においても接続部は高い信頼性を持って接続され
ていた。Also in this example, the connection portion was connected with high reliability.
また、放熱特性も良好であった。 Also, the heat dissipation characteristics were good.
(第8実施例) 第11図に第8実施例に使用する電気的接続部材を示
す。(Eighth Embodiment) FIG. 11 shows an electrical connecting member used in the eighth embodiment.
第11図(a)は電気的接続部材の斜視図、第11図
(b)は上記電気的接続部材の断面図である。FIG. 11 (a) is a perspective view of the electrical connecting member, and FIG. 11 (b) is a sectional view of the electrical connecting member.
かかる電気的接続部材の作成例を次に述べる。 An example of making such an electrical connection member will be described below.
まず、第1実施例に示した製法で、絶縁体中に無機材
料よりなる粉体又は繊維の一方又は両方が分散する電気
的接続部材128,129,130を3枚用意する。First, by the manufacturing method shown in the first embodiment, three electrical connecting members 128, 129, and 130 in which one or both of powder and fibers made of an inorganic material are dispersed in an insulator are prepared.
1枚目128の金属線121の位置はm行n列目で、ma,nb
だけ中心から変位している。2枚目129の金属線121の位
置はm行n列目でmac,nbcだけ中心から変位している。
3枚目130の金属線121の位置はm行n列でmad,nbdだけ
中心から変位している。a,b,c,dの値は上下の金属121は
導通するが左右には互いに電気的に導通しないような値
をとる。3枚の電気的接続部材を位置決めし、熱圧着等
の方法を用い積層し、電気的接続部材125を作成する。The position of the metal wire 121 of the first sheet 128 is at the m-th row and the n-th column, ma, nb
Only displaced from the center. The position of the metal wire 121 of the second sheet 129 is displaced from the center by mac and nbc at the m-th row and the n-th column.
The position of the metal wire 121 of the third sheet 130 is displaced from the center by mad, nbd in m rows and n columns. The values of a, b, c, and d are such that the upper and lower metals 121 are conductive, but the left and right metals 121 are not electrically conductive with each other. The three electrical connecting members are positioned and laminated by a method such as thermocompression bonding to form the electrical connecting member 125.
なお、本例においては、電気的接続部材の金属の位置
をm行n列というように規則をもった位置を選んだが、
上下の金属が導通し、左右には互いに電気的に導通しな
いようにすればランダムでもよい。In addition, in this example, the position of the metal of the electrical connection member is selected according to a rule such as m rows and n columns.
It may be random as long as the upper and lower metals are electrically connected and the left and right metals are not electrically connected to each other.
また、本例では3層積層する場合について述べたが、
2枚以上であれば何枚でもよい。また、熱圧着の方法を
用いて積層すると述べたが、圧着、接着等の方法を用い
てもよい。さらに、本例の電気的接続部材を加工して第
7図に示すように突起を設けてもよいし、第8図に示し
たようにバンプ150を設けてもよい。In addition, although the case where three layers are stacked is described in this example,
Any number may be used as long as it is two or more. Moreover, although it has been described that the layers are laminated by using a thermocompression bonding method, a method such as pressure bonding or adhesion may be used. Further, the electrical connection member of this example may be processed to provide protrusions as shown in FIG. 7, or bumps 150 as shown in FIG.
本例においても接続部は高い信頼性を持って接続され
ていた。Also in this example, the connection portion was connected with high reliability.
また、放熱特性も良好であった。 Also, the heat dissipation characteristics were good.
(第9実施例) 第12図に第9実施例に使用する電気的接続部材を示
す。(Ninth Embodiment) FIG. 12 shows an electrical connecting member used in the ninth embodiment.
第12図(a)は電気的接続部材の製造途中の断面図、
第12図(b)は上記電気的接続部材の斜視図、第12図
(c)は上記の断面図である。FIG. 12 (a) is a cross-sectional view of the electrical connecting member during manufacture,
FIG. 12 (b) is a perspective view of the electrical connecting member, and FIG. 12 (c) is the above sectional view.
まず、金属線案内板131,132を用意する。そして、金
属線案内板131,132にあけられている所望の穴133,134に
金属線121を通し、所望の張力で張る。その後、金属線
案内板131,132間に樹脂123を流し込み、硬化させる。な
お、樹脂123を流し込む前に、予め樹脂123中に粉体又は
繊維を添加し、粉体又は繊維を樹脂中に分散せしめてお
く。しかる後、案内板を取りはずし、電気的接続部材12
5を作成する。First, the metal wire guide plates 131 and 132 are prepared. Then, the metal wire 121 is passed through the desired holes 133 and 134 formed in the metal wire guide plates 131 and 132 and stretched with a desired tension. Then, the resin 123 is poured between the metal wire guide plates 131 and 132 to be cured. Before pouring the resin 123, powder or fibers are added to the resin 123 in advance and the powder or fibers are dispersed in the resin. After that, the guide plate is removed and the electrical connection member 12
Create 5.
また、本例の電気的接続部材を加工して、第7図に示
すように突起を設けてもよいし、第8図に示すようにバ
ンプ150を設けてもよい。Further, the electrical connection member of this example may be processed to provide a protrusion as shown in FIG. 7 or a bump 150 as shown in FIG.
本実施例の第1の回路部品及び第2の電気回路部品
は、それぞれ、半導体素子、回路基板、リードフレーム
等の回路基材のうちの1つである。本例においても接続
部は高い信頼性を持って接続されていた。Each of the first circuit component and the second electric circuit component of this embodiment is one of circuit substrates such as a semiconductor element, a circuit board, and a lead frame. Also in this example, the connection portion was connected with high reliability.
また、放熱特性も良好であった。 Also, the heat dissipation characteristics were good.
[発明の効果] 本発明は以上のように構成したので次の数々の効果が
得られる。[Effects of the Invention] Since the present invention is configured as described above, the following various effects can be obtained.
1.半導体素子と回路基板、リードフレーム等の回路基材
の接続に関し、信頼性の高い接続が得られる。従って、
従来用いられてきたワイヤボンデイング方式、TAB方
式、CCB方式を置き変えることが可能となる。1. Reliable connection can be obtained regarding the connection between the semiconductor element and the circuit substrate such as the circuit board and the lead frame. Therefore,
It is possible to replace the conventionally used wire bonding method, TAB method, and CCB method.
2.本発明によると電気回路部品の接続部をいかなる位置
(特に内部)にも配置することができることからワイヤ
ボンディング方式、TAB方式よりもさらに多点接続が可
能となり、多ピン数接続向きの方式となる。2. According to the present invention, since the connection portion of the electric circuit component can be arranged at any position (especially inside), it is possible to connect more points than the wire bonding method and the TAB method, and a method suitable for a high pin count connection. Becomes
さらに電気的接続部材の隣接金属間に絶縁物質が存在
することにより隣接金属間の電気的導通しないことより
CCB方式よりもさらに多点接続が可能となる。Furthermore, since there is an insulating substance between the adjacent metals of the electrical connection member, there is no electrical continuity between the adjacent metals.
It enables more multi-point connection than the CCB method.
3.電気的接続部材において使用される金属部材の量は従
来に比べ微量であるため、仮に金属部材に金等の高価な
金属を使用しても従来より安価となる。3. Since the amount of the metal member used in the electrical connection member is smaller than that of the conventional one, even if an expensive metal such as gold is used for the metal member, the cost will be lower than the conventional one.
4.高密度の半導体装置等が得られる。4. High-density semiconductor devices can be obtained.
5.電気回路部品の両方が、電気接続部材を介して合金化
されており電気回路部品同士が強固(強度的に強く)か
つ確実に接続されるので、機械的に強く、不良率の極め
て低い電気回路部材を得ることができる。5. Both of the electric circuit parts are alloyed through the electric connection member, and the electric circuit parts are connected firmly (strong in strength) and securely, so they are mechanically strong and the defect rate is extremely low. An electric circuit member can be obtained.
6.電気回路部品の両方を、電気的接続部材を介して合金
化するので、電気回路部材の作成工程中及び作成後にお
いて、治具等を使用して電気回路部品を保持する必要が
なく、電気回路部材の作成及び作成後の管理が容易であ
る。6.Since both of the electric circuit parts are alloyed via the electric connection member, there is no need to hold the electric circuit parts with a jig or the like during and after the process of forming the electric circuit member, It is easy to create an electric circuit member and manage it after creation.
7.電気回路部品の両方が、電気的接続部材を介して合金
化されているので、電気回路部品相互の接触抵抗が一方
のみを合金化した場合に比べてより小さくなる。7. Since both of the electric circuit parts are alloyed via the electrical connection member, the contact resistance between the electric circuit parts is smaller than that in the case where only one is alloyed.
8.電気的接続部材の電気的絶縁物質として熱伝導性の良
い材料を選択することにより、電気回路部品からの放熱
性が良好となり、放熱性が良い半導体装置が得られる。8. By selecting a material having good thermal conductivity as the electrically insulating material of the electrical connection member, the heat dissipation from the electric circuit component is improved, and a semiconductor device with good heat dissipation can be obtained.
9.電気的接続部材の絶縁体中には無機材料よりなる粉体
又は繊維が分散しているので、第1の電気回路部品又は
第2の電気回路部品に熱が発生しても電気的接続部材を
介してその熱は外部に放熱される。従って、放熱性の良
好な電気回路部材を得ることができる。9. Since the powder or fiber made of an inorganic material is dispersed in the insulator of the electrical connection member, electrical connection is achieved even if heat is generated in the first electrical circuit component or the second electrical circuit component. The heat is radiated to the outside through the member. Therefore, an electric circuit member having good heat dissipation can be obtained.
10.熱が加わっても熱応力の発生が少なく、信頼性の高
い電気回路部材部材、ひいては、半導体装置が得られ
る。10. It is possible to obtain a highly reliable electric circuit member, and eventually a semiconductor device, in which thermal stress is less likely to occur even when heat is applied.
もちろん、電気的接続部材の電気的絶縁物質として半
導体素子及び回路基材と同じかあるいは同程度の熱膨張
率を持つ材料を選択することにより信頼性の良い半導体
装置が得られる。Of course, a highly reliable semiconductor device can be obtained by selecting a material having the same or similar coefficient of thermal expansion as the semiconductor element and the circuit substrate as the electrically insulating material of the electrical connection member.
なお、電気的接続部材の絶縁体中に他の物質を埋めこ
んだり、積層することにより、放熱性の良い、低応力で
しかもシールド効率が得られる電気回路部材が得られ
る。By embedding or stacking another substance in the insulator of the electrical connection member, it is possible to obtain an electric circuit member with good heat dissipation, low stress, and shield efficiency.
【図面の簡単な説明】 第1図は第1実施例を示す断面図である。第1図(a)
は接続前の状態を示し、第2図(b)は接続後の状態を
示す。第2図は第1実施例に使用する電気的接続部材の
一製造方法例を説明するための図であり、第2図(a)
は断面図、第2図(b)は斜視図、第2図(c)は断面
図である。第3図は第2実施例を示し、第3図(a)は
斜視図、第3図(b)は断面図である。第4図は第3実
施例を示す断面図である。第5図は第4実施例を示す断
面図である。第6図は第5実施例を示し、第6図(a)
は接続前の状態を示す断面図であり第6図(b)は接続
後の状態を示す断面図である。第7図及び第8図も第5
実施例を示し、第7図(a)及び第8図(a)は斜視図
であり、第7図(b)及び第8図(b)は断面図であ
る。第9図は第6実施例を示し、第9図(a)は接続前
の状態を示す斜視図であり、第9図(b)は接続後の状
態を示す断面図である。第10図は第7実施例を示す断面
図であり、第10図(a)は接続前の状態を示し、第10図
(b)は接続後の状態を示す。第11図は第8実施例に係
る電気的接続部材を示し、第11図(a)は斜視図であ
り、第11図(b)は断面図である。第12図は第9実施例
に係る電気的接続部材の一製造例を示し、第12図
(a),(c)は断面図であり、第12図(b)は斜視図
である。第13図から第20図までは従来例を示し、第14図
を除き断面図であり、第14図は平面透視図である。 1……リードフレーム、2……リードフレームの素子搭
載部、3……銀ペースト、4、4′……半導体素子、5,
5′……半導体素子の接続部、6……リードフレームの
接続部、7……極細金属線、8……樹脂、9……半導体
装置、10……半導体素子の外周縁部、11……リードフレ
ームの素子搭載部の外周縁部、16……キャリアフィルム
基板、17……キャリアフィルム基板のインナーリード
部、20……樹脂、21……樹脂、31……半田バンプ、32…
…基板、33……基板の接続部、51……回路基板、52……
回路基板の接続部、54……電気的接続部材の接続部、55
……リードフレーム、63……封止材、70,70′……金属
材、71,71′……絶縁膜、72,72′……絶縁膜の露出面、
73,73′……金属材の露出面、75,75′……回路基材、7
6,76′……回路基材の接続部、77……異方性導電膜の絶
縁物質、78……異方性導電膜、79……導電粒子、81……
エラスチックコネクタの絶縁物質、82……エラスチック
コネクタの金属線、83……エラスチックコネクタ、101
……回路基板、102……接続部、103……絶縁膜、106…
…絶縁膜、104……回路基板、105……接続部、107金属
部材、108……接続部、109……接続部、111……絶縁
体、121……金属線、122……棒、123……樹脂、124……
点線、125……電気的接続部材、126……突起、128,129,
130……電気的接続部材、131,132……金属線案内板、15
0……バンプ。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view showing a first embodiment. Fig. 1 (a)
Shows the state before connection, and FIG. 2 (b) shows the state after connection. FIG. 2 is a view for explaining an example of a manufacturing method of the electrical connecting member used in the first embodiment, and FIG.
Is a sectional view, FIG. 2 (b) is a perspective view, and FIG. 2 (c) is a sectional view. FIG. 3 shows a second embodiment, FIG. 3 (a) is a perspective view, and FIG. 3 (b) is a sectional view. FIG. 4 is a sectional view showing the third embodiment. FIG. 5 is a sectional view showing the fourth embodiment. FIG. 6 shows a fifth embodiment, and FIG. 6 (a)
Is a sectional view showing a state before connection, and FIG. 6 (b) is a sectional view showing a state after connection. 7 and 8 are also fifth
FIG. 7 (a) and FIG. 8 (a) are perspective views, and FIGS. 7 (b) and 8 (b) are sectional views showing an embodiment. FIG. 9 shows a sixth embodiment, FIG. 9 (a) is a perspective view showing a state before connection, and FIG. 9 (b) is a sectional view showing a state after connection. FIG. 10 is a sectional view showing a seventh embodiment, FIG. 10 (a) shows a state before connection, and FIG. 10 (b) shows a state after connection. FIG. 11 shows an electrical connecting member according to the eighth embodiment, FIG. 11 (a) is a perspective view, and FIG. 11 (b) is a sectional view. FIG. 12 shows a manufacturing example of the electrical connecting member according to the ninth embodiment, wherein FIGS. 12 (a) and 12 (c) are sectional views and FIG. 12 (b) is a perspective view. FIG. 13 to FIG. 20 show a conventional example and are sectional views except FIG. 14, and FIG. 14 is a plan perspective view. 1 ... Lead frame, 2 ... Lead frame element mounting part, 3 ... Silver paste, 4, 4 '... Semiconductor element, 5,
5 '... semiconductor element connection part, 6 ... lead frame connection part, 7 ... extra fine metal wire, 8 ... resin, 9 ... semiconductor device, 10 ... outer peripheral edge part of semiconductor element, 11 ... 16 ... Carrier film substrate, 17 ... Inner lead part of carrier film substrate, 20 ... Resin, 21 ... Resin, 31 ... Solder bump, 32 ...
… Board, 33 …… Board connection, 51 …… Circuit board, 52 ……
Circuit board connection, 54 ... Electrical connection member connection, 55
...... Lead frame, 63 …… Encapsulation material, 70,70 ′ …… Metal material, 71,71 ′ ... Insulation film, 72,72 ′ ... Exposed surface of insulation film,
73,73 ′ …… Exposed surface of metal material, 75,75 ′ …… Circuit base material, 7
6,76 ′ …… Connecting parts of circuit substrate, 77 …… Insulating material of anisotropic conductive film, 78 …… Anisotropic conductive film, 79 …… Conductive particles, 81 ……
Insulating material for elastic connectors, 82 …… Metal wire for elastic connectors, 83 …… Elastic connectors, 101
...... Circuit board, 102 ...... Connection part, 103 ...... Insulation film, 106 ...
... Insulating film, 104 ... Circuit board, 105 ... Connection part, 107 Metal member, 108 ... Connection part, 109 ... Connection part, 111 ... Insulator, 121 ... Metal wire, 122 ... Rod, 123 …… Resin, 124 ……
Dotted line, 125 ... Electrical connection member, 126 ... Protrusion, 128,129,
130 …… Electrical connection member, 131,132 …… Metal wire guide plate, 15
0 ... bump.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 市田 安照 東京都大田区下丸子3丁目30番2号 キヤ ノン株式会社内 (72)発明者 小西 正暉 東京都大田区下丸子3丁目30番2号 キヤ ノン株式会社内 (56)参考文献 特開 昭61−272941(JP,A) 特開 昭53−53261(JP,A) 特開 昭56−93337(JP,A) 特開 昭60−100441(JP,A) 特開 昭60−123093(JP,A) 特開 昭62−234804(JP,A) 特開 昭62−237739(JP,A) 特開 昭51−22367(JP,A) 実開 昭58−159741(JP,U) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yasuteru Ichida 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Masaaki Konishi 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (56) Reference JP 61-272941 (JP, A) JP 53-53261 (JP, A) JP 56-93337 (JP, A) JP 60-100441 ( JP, A) JP 60-123093 (JP, A) JP 62-234804 (JP, A) JP 62-237739 (JP, A) JP 51-22367 (JP, A) Sho 58-159741 (JP, U)
Claims (2)
続部を有する第2の電気回路部品とを、両電気回路部品
を電気的に接続するための電気的接続部材を両者の間に
介在させて、両電気回路部品の接続部において接続して
構成される電気回路部材において、 該電気的接続部材は、金属または合金よりなる複数の金
属部材を、該金属部材の一端を第1の電気部品側に露出
させて、一方、該金属部材の他端を該第2の電気回路部
品側に露出させて、それぞれの金属部材同士が電気的に
絶縁されるように、絶縁体中に埋設して構成されてお
り、かつ、該絶縁体には、無機材料よりなる粉体又は繊
維の一方又は両方が分散しており、 第1の電気回路部品の接続部と第1の電気回路部品側に
露出した金属部材の一端とを合金化することにより接続
し、かつ、第2の電気回路部品の接続部と第2の電気回
路部品側に露出した金属部材の一端とを合金化すること
により接続したことを特徴とする電気回路部材。1. A first electric circuit component having a connecting portion and a second electric circuit component having a connecting portion are provided with an electric connecting member for electrically connecting both electric circuit components. And a plurality of metal members made of a metal or an alloy, wherein one end of each of the metal members is a first electric member. Of the metal member while exposing the other end of the metal member to the second electric circuit component side so that the metal members are electrically insulated from each other. One of or both of powder and fiber made of an inorganic material are dispersed in the insulator, and the insulator is connected to the connection portion of the first electric circuit component and the first electric circuit component. Connected by alloying with one end of the metal member exposed on the side And an electrical circuit member and one end of the second electric circuit components of the connecting portion and the second electrical circuit components exposed to the side metal member is characterized in that connected by alloying.
品は、それぞれ半導体素子、回路基板やリードフレーム
等の回路基材のうち1つである特許請求範囲第1項記載
の電気回路部材。2. The electric circuit according to claim 1, wherein each of the first electric circuit component and the second electric circuit component is one of circuit substrates such as a semiconductor element, a circuit board and a lead frame. Element.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62066485A JPH0828400B2 (en) | 1987-03-20 | 1987-03-20 | Electric circuit member |
EP98102122A EP0854506A3 (en) | 1987-03-04 | 1988-03-04 | Electrically connecting member and electric circuit member |
EP88103400A EP0284820A3 (en) | 1987-03-04 | 1988-03-04 | Electrically connecting member, and electric circuit member and electric circuit device with the connecting member |
US08/597,383 US5967804A (en) | 1987-03-04 | 1996-02-08 | Circuit member and electric circuit device with the connecting member |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62066485A JPH0828400B2 (en) | 1987-03-20 | 1987-03-20 | Electric circuit member |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63232439A JPS63232439A (en) | 1988-09-28 |
JPH0828400B2 true JPH0828400B2 (en) | 1996-03-21 |
Family
ID=13317138
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62066485A Expired - Fee Related JPH0828400B2 (en) | 1987-03-04 | 1987-03-20 | Electric circuit member |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0828400B2 (en) |
-
1987
- 1987-03-20 JP JP62066485A patent/JPH0828400B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPS63232439A (en) | 1988-09-28 |
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Legal Events
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LAPS | Cancellation because of no payment of annual fees |