JPS63224235A - Electric circuit member - Google Patents

Electric circuit member

Info

Publication number
JPS63224235A
JPS63224235A JP5710087A JP5710087A JPS63224235A JP S63224235 A JPS63224235 A JP S63224235A JP 5710087 A JP5710087 A JP 5710087A JP 5710087 A JP5710087 A JP 5710087A JP S63224235 A JPS63224235 A JP S63224235A
Authority
JP
Japan
Prior art keywords
electric circuit
metal
electrical connection
electrical
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5710087A
Other languages
Japanese (ja)
Inventor
Tetsuo Yoshizawa
吉沢 徹夫
Hideyuki Nishida
秀之 西田
Masaaki Imaizumi
昌明 今泉
Yasuteru Ichida
市田 安照
Masateru Konishi
小西 正暉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP5710087A priority Critical patent/JPS63224235A/en
Publication of JPS63224235A publication Critical patent/JPS63224235A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives

Landscapes

  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To obtain a mechanically strong and very low-fraction defective electric circuit member by a method wherein both of electric circuit components are alloyed through an electrical connection member to connect firmly and reliably the fellow electric circuit components. CONSTITUTION:An electrical connection member 125 is made by a method wherein the respective fellow metal members 107 of a plurality of metal members 107 consisting of a metal or an alloy are electrically insulated, each one end of the members 107 is made to expose on the side of a first circuit board 101, while each other end of the members 107 is made to expose on the side of a second circuit board 104, the members 107 are buried in an insulator 111 to constitute the member 125 and moreover, the insulator 111 is provided with holes to be opened on its outside. The board 101 and the members 107 are connected to each other by alloying connection parts 102 of the board 101 and each one end of the members 107, which is exposed on the side of the board 101, and the board 104 and the members 107 are connected to each other by alloying connection parts 105 of the board 104 and each one end of the members 107, which is exposed on the side of the board 104. Thereby, as the fellow electric circuit components are connected firmly and reliably, an electric circuit member is mechanically strong and its fraction defective becomes very low.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、電気回路部材に関する。[Detailed description of the invention] [Industrial application field] TECHNICAL FIELD The present invention relates to electrical circuit members.

[従来技術] 従来、電気回路部品同士を電気的に接続して構成される
電気回路部材に関する技術としては以下に述べる技術が
知られている。
[Prior Art] Conventionally, the following techniques are known as techniques related to electric circuit members configured by electrically connecting electric circuit components.

■ワイヤポンディング方法、 第13図及び第14図はワイヤポンディング方法によっ
て接続され、封止された半導体装置の代表例を示してお
り、以下、第13図及び第14図に基づきワイヤポンデ
ィング方法を説明する。
■Wire bonding method Figures 13 and 14 show typical examples of semiconductor devices connected and sealed by the wire bonding method. Explain how.

この方法は、Agペースト3等を用いて半導体素子4を
素子搭載部2に固定支持し、次いで、半導体素子4の接
続部5と、リードフレーム1(7)所望の接続部6とを
金等の極細金属117を用いて電気的に接続する方法で
ある。
In this method, the semiconductor element 4 is fixedly supported on the element mounting part 2 using Ag paste 3 or the like, and then the connection part 5 of the semiconductor element 4 and the desired connection part 6 of the lead frame 1 (7) are connected with gold or the like. This is a method of electrically connecting using an ultra-fine metal 117.

なお、接続後は、トランスファーモールド法等の方法で
樹脂8を用いて半導体素子4とリードフレーム1を封止
し、その後、樹脂封止部分から外に伸びたリードフレー
ムエの不要部分を切断し、所望の形に曲げ半導体装置9
を作る。
After the connection, the semiconductor element 4 and the lead frame 1 are sealed using a resin 8 using a method such as transfer molding, and then the unnecessary portion of the lead frame 1 extending outward from the resin-sealed part is cut off. , bend the semiconductor device 9 into the desired shape.
make.

■T A B (Tape Automated Bo
nding)法(例えば、特開昭59−139636号
公報)第15図はTAB法により接続され封止された半
導体装置の代表例を示す。
■T A B (Tape Automated Bo
FIG. 15 shows a typical example of a semiconductor device connected and sealed by the TAB method.

この方法は、テープキャリア方式による自動ポンディン
グ方法である。すなわち、第15図に基づいて説明する
と、キャリアフィルム基板16と半導体素子4とを位置
決めした後、キャリアフィルム基板16のインナーリー
ド部17と半導体素子4の接続部5とを熱圧着すること
により接続する方法である。接続後は、樹脂20乃至樹
脂21で封止し半導体装置9とする。
This method is an automatic bonding method using a tape carrier method. That is, to explain based on FIG. 15, after positioning the carrier film substrate 16 and the semiconductor element 4, the inner lead part 17 of the carrier film substrate 16 and the connecting part 5 of the semiconductor element 4 are connected by thermocompression bonding. This is the way to do it. After the connection, the semiconductor device 9 is sealed with resins 20 and 21.

■CCB (C:ontrolled Co11aps
e Bonding )法(例えば、特公昭42−20
96号、特開昭60−57944号公報) 第16図はCCB法によって接続され封止された半導体
装置の代表例を示す、この方法を第16図に基づき説明
する。なお、木裏法はフリップチップポンディング法と
も言われている。
■CCB (C: controlled Co11aps
e Bonding) law (e.g., Special Publication Act 1972-20)
(No. 96, Japanese Unexamined Patent Publication No. 60-57944) FIG. 16 shows a typical example of a semiconductor device connected and sealed by the CCB method. This method will be explained based on FIG. 16. The Kiura method is also called the flip chip bonding method.

半導体素子4の接続f+II5に予め半田バンプ31を
設け、半田バンブ31が設けられだ半導体素子4を1回
路基板32上に位置決めして搭載する。
A solder bump 31 is provided in advance at the connection f+II5 of the semiconductor element 4, and the semiconductor element 4 provided with the solder bump 31 is positioned and mounted on one circuit board 32.

その後、半田を加熱溶解することにより回路基板32と
に半導体素子4とを接続させ、フラックス洗浄後封止し
て半導体装置9を作る。
Thereafter, the semiconductor element 4 is connected to the circuit board 32 by heating and melting the solder, and the semiconductor device 9 is manufactured by sealing after washing with flux.

■i17及び第18図に示す方法 すなわち、第1の半導体素子4の接続部5以外の部分に
ポリイミド等よりなる絶縁膜71を形成せしめ、接続部
5にはAu等よりなる金属材70を設け1次いで、金属
材70及び絶縁膜71の露出面73.72を平らにする
。一方、第2の半導体素子4′の接続部5”以外の部分
にポリイミド等よりなる絶縁膜71゛を形成せしめ、接
続部5′にはAu等よりなる金属材70’を設け、次い
で、金属材70°及び絶縁膜71′の露出面73’、7
2’を平らにする。
■The method shown in i17 and FIG. 18, that is, an insulating film 71 made of polyimide or the like is formed on the part of the first semiconductor element 4 other than the connection part 5, and a metal material 70 made of Au or the like is provided in the connection part 5. First, the exposed surfaces 73 and 72 of the metal material 70 and the insulating film 71 are flattened. On the other hand, an insulating film 71' made of polyimide or the like is formed on a portion of the second semiconductor element 4' other than the connection part 5'', a metal material 70' made of Au or the like is provided on the connection part 5', and then a metal material 70' made of Au or the like is provided on the connection part 5'. material 70° and exposed surfaces 73', 7 of the insulating film 71'
Flatten 2'.

しかる後、第18図に示すように第1の半導体素子4と
第2の半導体素子4′とを位置決めし、位置決め後、熱
圧着することにより第1の半導体素子4の接続部5と第
2の半導体素子4′の接続部5′を金属材70.70’
を介して接続する。
Thereafter, as shown in FIG. 18, the first semiconductor element 4 and the second semiconductor element 4' are positioned, and after positioning, the connection part 5 of the first semiconductor element 4 and the second The connecting portion 5' of the semiconductor element 4' is made of metal material 70.70'
Connect via.

■第19図に示す方法 すなわち、第1の回路基材75と第2の回路基材75”
の間に、絶縁物質77中に導電粒子79を分散させた異
方性導電膜7Bを介在させ、第1の回路基材75と第2
の回路基材75°を位置決めしたのち、加圧もしくは、
加圧・加熱し、第1の回路基材75の接続部76と第2
の回路基材75°の接続部76゛を接続する方法である
■The method shown in FIG. 19, that is, the first circuit substrate 75 and the second circuit substrate 75''
An anisotropic conductive film 7B in which conductive particles 79 are dispersed in an insulating material 77 is interposed between the first circuit base material 75 and the second circuit base material 75.
After positioning the circuit board at 75°, apply pressure or
By applying pressure and heating, the connection portion 76 of the first circuit substrate 75 and the second
This is a method of connecting a connecting portion 76' at a 75° angle of a circuit board.

■第20図に示す方法 すなわち、第1の回路基材75と第2の回路基材75°
の間に、絶縁物質81中に一定方向にFe、Cu等の金
属銀82を配したエラスチックコネクター83を介在さ
せ、第1の回路基材75と第2の回路基材75°を位置
決めしたのち、加圧し、第1の回路基材75の接続部7
6と第2の回路基材75°の接続部76°を接続する方
法である。
■The method shown in FIG. 20, that is, the first circuit substrate 75 and the second circuit substrate 75°
After positioning the first circuit base material 75 and the second circuit base material 75° by interposing an elastic connector 83 in which metallic silver 82 such as Fe or Cu is arranged in a certain direction in an insulating material 81, , and pressurize the connecting portion 7 of the first circuit board 75.
6 and the connecting portion 76° of the second circuit board 75°.

[問題点が解決しようとする問題点] ところで上記した従来のポンディング法には次のような
問題点がある。
[Problems to be Solved] The conventional bonding method described above has the following problems.

■ワイヤポンディング法 ■半導体素子4の接続部5を半導体素子4の内部にくる
ように設計すると、極細金属線7は、その線径が極めて
小さいために、半導体素子4の外周縁部10あるいはリ
ードフレーム1の素子搭載部2の外周縁部11に接触し
易くなる。極細金属線7がこれら外周縁部10乃至11
に接触すると短絡する。さらに、極細金属線7の長さを
長くせざるを得す、その長さを長くすると、トランスフ
ァーモールド成形時に極細金属線7が変形しやすくなる
■ Wire bonding method ■ If the connection part 5 of the semiconductor element 4 is designed to be inside the semiconductor element 4, the ultrafine metal wire 7 has an extremely small wire diameter, It becomes easier to contact the outer peripheral edge 11 of the element mounting portion 2 of the lead frame 1. The ultra-fine metal wire 7 is attached to these outer peripheral edges 10 to 11.
It will short circuit if it comes into contact with. Furthermore, the length of the ultra-fine metal wire 7 has to be increased, and when the length is increased, the ultra-fine metal wire 7 becomes easily deformed during transfer molding.

従って、半導体素子4の接続部5は半導体素子4上の周
辺に配置する必要が生じ1回路設計上の制限を受けざる
を得なくなる。
Therefore, the connecting portion 5 of the semiconductor element 4 needs to be placed around the semiconductor element 4, and is subject to limitations in one circuit design.

■ワイヤポンディング法においては、隣接する極細金E
17同士の接触等を避けるためには半導体素子4上の接
続部5のピッチ寸法(隣接する接続部の中心間の距離)
としである程度の間隔をとらざるを得ない、従って、半
導体素子4の大きさが決まれは必然的に接続部5の最大
数が決まる。
■In the wire bonding method, adjacent ultra-fine gold E
In order to avoid contact between 17, the pitch dimension of the connecting parts 5 on the semiconductor element 4 (distance between the centers of adjacent connecting parts)
Therefore, when the size of the semiconductor element 4 is determined, the maximum number of the connecting portions 5 is inevitably determined.

しかるに、ワイヤポンディング法では、このピッチ寸法
が通常0.2mm程度と大きいので、接続部5の数は少
なくせざるを得なくなる。
However, in the wire bonding method, the pitch dimension is usually as large as about 0.2 mm, so the number of connecting portions 5 must be reduced.

■半導体素子4上の接続部5から測った極細金属&I1
7の高さhは通常0.2〜0.4mmであるが、0.2
mm以下にし薄型化することは比較的困難であるので薄
型化を図れない。
■Extremely fine metal &I1 measured from the connection part 5 on the semiconductor element 4
The height h of 7 is usually 0.2 to 0.4 mm, but 0.2
Since it is relatively difficult to reduce the thickness to less than mm, it is not possible to reduce the thickness.

■ワイヤボンディング作業に時間がかかる。特に接続点
数が多くなるとポンディング時間が長くなり生産効率が
悪くなる。
■Wire bonding takes time. In particular, when the number of connection points increases, the bonding time increases and production efficiency deteriorates.

■何らかの要因でトランスファーモールド条件範囲を越
すと、極細金属線7が変形したり最悪の場合には切断し
たりする。
- If the transfer molding condition range is exceeded for some reason, the ultrafine metal wire 7 may be deformed or, in the worst case, may be cut.

また半導体素子4上の接続部5においては、極細金属線
7と合金化されないA!;Lが露出しているためA文腐
食が生じ易くなり、信頼性の低下が生じる。
Furthermore, in the connection portion 5 on the semiconductor element 4, A! is not alloyed with the ultrafine metal wire 7! ; Since L is exposed, corrosion of A is likely to occur, resulting in a decrease in reliability.

■TAB法 ■半導体素子4の接続部5を半導体素子の内側にくるよ
うに設計すると、キャリアフィルム基板16のインナー
リード部17の襄さ見が長くなるため、インナーリード
部17が変形し易くなりインナーリード部を所望の接続
部5に接続できなかったり、インナーリード部17が半
導体素子4の接続部5以外の部分に接触したりする。こ
れを避けるためには半導体素子4の接続部5を半導体素
子4上の周辺に持ってくる必要が生じ、設計上の制限を
受ける。
■TAB method■ If the connecting part 5 of the semiconductor element 4 is designed to be inside the semiconductor element, the length of the inner lead part 17 of the carrier film substrate 16 becomes longer, and the inner lead part 17 becomes easily deformed. The inner lead portion may not be connected to the desired connection portion 5, or the inner lead portion 17 may come into contact with a portion of the semiconductor element 4 other than the connection portion 5. In order to avoid this, it is necessary to bring the connecting portion 5 of the semiconductor element 4 to the periphery above the semiconductor element 4, which is subject to design limitations.

■TAB法においても、半導体素子4上の接続部のピッ
チ寸法は0.09〜0.15mm程度とる必要があり、
従ってワイヤポンディング法の問題点■で述べたと同様
に、接続部数を増加させることはむずかしくなる。
■Even in the TAB method, the pitch dimension of the connection parts on the semiconductor element 4 must be approximately 0.09 to 0.15 mm.
Therefore, similar to the problem (2) of the wire bonding method, it is difficult to increase the number of connections.

■キャリアフィルム基板16のインナーリード部17が
半導体素子4の接続部5以外の部分に接触しないように
させるため所望のインナーリード部17の接続形状が要
求されコスト高となる。
(2) In order to prevent the inner lead portions 17 of the carrier film substrate 16 from coming into contact with portions other than the connection portions 5 of the semiconductor element 4, a desired connection shape of the inner lead portions 17 is required, which increases costs.

■半導体素子4の接続部5とインナーリード部17とを
接続するためには、半導体素子4の接続部5またはイン
ナーリード部17の接続部に金バンプをつけなければな
らずコスト高になる。
(2) In order to connect the connecting portion 5 of the semiconductor element 4 and the inner lead portion 17, gold bumps must be attached to the connecting portion 5 of the semiconductor element 4 or the connecting portion of the inner lead portion 17, which increases the cost.

■CCB法 ■半導体素子4の接続部5に半田バンプ31を形成させ
なければならないためコスト高になる。
■ CCB method ■ Solder bumps 31 must be formed on the connection portions 5 of the semiconductor element 4, which increases costs.

■バンプの半田量が多いと隣接する半田バンプとブリッ
ジ(隣接する半田バンプ同士が接触する現象)が生じ、
逆に少いと半導体素子4の接続部5と基板32の接続部
33が接続しなくなり電気的導通がとれなくなる。すな
わち、接続の信頼性が低くなる。さらに、半田量、接続
の半田形状が接続の信頼性に影!する(ろう接技術研究
会技術資料、No、017− ’84、ろう接技術研究
会発行)という問題がある。
■If the amount of solder on a bump is large, bridges (a phenomenon in which adjacent solder bumps come into contact with each other) will occur between adjacent solder bumps.
On the other hand, if the amount is too small, the connecting portion 5 of the semiconductor element 4 and the connecting portion 33 of the substrate 32 will not be connected and electrical continuity will not be established. In other words, the reliability of the connection becomes low. Furthermore, the amount of solder and the solder shape of the connection affect the reliability of the connection! (Brazing Technology Research Group Technical Data, No. 017-'84, Published by Brazing Technology Research Group).

このように、半田バンプの量の多少が接続の信頼性に影
響するため半田バンプ31の量のコントロールが必要と
されている。
As described above, the amount of solder bumps 31 needs to be controlled because the amount of solder bumps affects the reliability of the connection.

■半田バンプ31が半導体素子4の内側に存在すると接
続が良好に行なわれたか否かの目視検査がむずかしくな
る。
(2) If the solder bumps 31 are present inside the semiconductor element 4, it becomes difficult to visually inspect whether or not the connection has been made well.

■半導体素子の放熱特性が悪い(参考資料;Elect
ronic Packaging Technolog
y 1987.1(Vol。
■Poor heat dissipation characteristics of semiconductor elements (reference material; Elect
ronic Packaging Technology
y 1987.1 (Vol.

3、No、l) P、68〜71. NIKKEI M
ICRO[]EVICE’J、1988゜5月、 P、
97〜工08)ため、放熱特性を良好たらしめるだめの
多大な工夫が必要とされる。
3, No, l) P, 68-71. NIKKEI M
ICRO[]EVICE'J, May 1988, P.
97 to 08), a great deal of effort is required to improve the heat dissipation characteristics.

■第17図及び第18図に示す技術 ■絶縁膜71の露出面72と金属材70の露出面73、
さらに絶縁膜71’の露出面72′と金属材70′の露
出面73′を平らにしなければならず、そのための工数
が増し、コスト高になる。
■Technique shown in FIGS. 17 and 18■Exposed surface 72 of insulating film 71 and exposed surface 73 of metal material 70,
Furthermore, the exposed surface 72' of the insulating film 71' and the exposed surface 73' of the metal material 70' must be made flat, which increases the number of steps and costs.

■絶縁膜71の露出面72と金属材70の露出面73あ
るいは絶縁膜71’の露出面72′と金属材70’の露
出面73′に凹凸があると金属材70と金属材70°と
が接続しなくなり2信頼性が低下する。
■If there are irregularities between the exposed surface 72 of the insulating film 71 and the exposed surface 73 of the metal material 70, or the exposed surface 72' of the insulating film 71' and the exposed surface 73' of the metal material 70', the metal material 70 and the metal material 70° 2 will not connect and reliability will decrease.

■第19図に示す技術 ■位置決め後に、接続部76と接続部76′とを加圧し
て接続する際に、圧力が一定にはかかりにくいため、接
続状態にバラツキが生じ、その結果、vc続部における
接触抵抗値のバラツキが大きくなる。そのため、接続の
信頼性が乏しくなる。
■Technology shown in Fig. 19■ After positioning, when applying pressure to connect the connecting portion 76 and the connecting portion 76', it is difficult to apply constant pressure, resulting in variations in the connection state, resulting in VC connection. The variation in contact resistance value between parts becomes large. Therefore, the reliability of the connection becomes poor.

また、多量の電流を流すと、発熱等の現象が生じるので
、多量の電流を流したい場合には不向きである。
In addition, when a large amount of current is passed, phenomena such as heat generation occur, so it is not suitable when a large amount of current is desired to be passed.

■圧力が一定にかけられたとしても、異方性導電fi7
8の導電粒子79の配列により抵抗値のバラツキが大き
くなる。そのため、接続の信頼性に乏しくなる。また、
大電流容量が要求される接続には不向きである。
■Even if a constant pressure is applied, anisotropic conductivity fi7
The arrangement of the conductive particles 79 of No. 8 increases the variation in resistance value. Therefore, the reliability of the connection becomes poor. Also,
It is not suitable for connections that require large current capacity.

■隣接する接続部のピッチ(接続部に隣接する接続部中
心間の距離)を狭くすると隣接する接続部の間の抵抗値
が小さくなることから高密度な接続には不向きである。
(2) If the pitch between adjacent connecting parts (the distance between the centers of adjacent connecting parts) is narrowed, the resistance value between adjacent connecting parts will decrease, which is not suitable for high-density connections.

■回路基材75.75°の接続部76.76゜の出っ張
り量hlのバラツキにより抵抗値が変化するため、ht
バラツキ量を正確に押さえることが必要である。
■The resistance value changes due to variations in the amount of protrusion hl at the connection part 76.76° of the circuit board 75.75°.
It is necessary to accurately control the amount of variation.

■さらに異方導電膜を、半導体素子と回路基材の接続、
また、第1の半導体素子と第2の半導体素子との接続に
使用した場合、上記■〜■の欠点の他、半導体素子の接
続部にバンプを設けなければならなくなり、コスト高に
なるという欠点が生じる。
■Additionally, anisotropic conductive films can be used to connect semiconductor elements and circuit substrates,
Furthermore, when used to connect the first semiconductor element and the second semiconductor element, in addition to the disadvantages mentioned above, bumps must be provided at the connection part of the semiconductor element, which increases the cost. occurs.

■第20図に示す技術 ■加圧が必要であり、加圧治具が必要となる。■Technology shown in Figure 20 ■Pressure is required, and a pressure jig is required.

[相]エラスチックコネクタ83の金属線82と第1の
回路基材75の接続部76また、第2の回路基材75゛
の接続部76°との接触抵抗は加圧力及び表面状態によ
り変化するため接続の信頼性は乏しい。
[Phase] The contact resistance between the metal wire 82 of the elastic connector 83 and the connecting portion 76 of the first circuit substrate 75 and the connecting portion 76 of the second circuit substrate 75' changes depending on the pressing force and surface condition. Therefore, the reliability of the connection is poor.

■エラスチックコネクタ83の金属線82は剛体である
ため、加圧力が大であるとエラスチックコネクタ83、
第1の回路基材75、第2の回路基材75゛の表面が破
損する可使性が大きい、また、加圧力が小であると、接
続の信頼性が乏しくなる。
■Since the metal wire 82 of the elastic connector 83 is a rigid body, if the pressing force is large, the elastic connector 83
If the surfaces of the first circuit base material 75 and the second circuit base material 75' are susceptible to damage, and if the pressing force is low, the reliability of the connection will be poor.

■さらに、回路基材75 、75 ’の接続部76.7
6°の出っ張りih2、またエラスチックコネクタ83
の金属線82の出っ張り量h3とそのバラツキが抵抗値
変化及び破損に影響を及ぼすので、バラツキを少なくす
る工夫が必要とされる。
■Furthermore, the connection portions 76.7 of the circuit substrates 75, 75'
6° protrusion ih2 and elastic connector 83
Since the protrusion amount h3 of the metal wire 82 and its dispersion affect the change in resistance value and damage, it is necessary to take measures to reduce the dispersion.

■さらに、エラスチックコネクターを半導体素子と回路
基材の接続、また、第1の半導体素子と第2の半導体素
子との接続に使用した場合、■〜■と同様な欠点を生ず
る。
(2) Further, when an elastic connector is used to connect a semiconductor element and a circuit substrate, or to connect a first semiconductor element and a second semiconductor element, the same drawbacks as in (1) to (2) occur.

本発明は、以上のような問題点をことごとく解決し、高
密度で高信頼性でしかも、低コストの新電気回路部材を
提案するものであり、従来の接続方式を置き変え得るこ
とはもちろん、高務度多点接続が得られ、熱等諸特性を
向上させ得るものである。
The present invention solves all of the above-mentioned problems and proposes a new electrical circuit member that is high in density, highly reliable, and low in cost. A high-performance multi-point connection can be obtained, and various properties such as heat can be improved.

(以下余白) [発明を解決するための手段] 本発明は、接続部を有する第1の電気回路部品と、接続
部を有する第2の電気回路部品とを両電気回路部品を′
電気的に接続するための電気的接続部材を両者の間に介
入させて、両電気回路部品の接続部において接続して構
成される電気回路部材において。
(Left below) [Means for Solving the Invention] The present invention provides a first electrical circuit component having a connecting portion and a second electrical circuit component having a connecting portion.
An electric circuit member configured by intervening an electric connecting member for electrical connection between the two electric circuit parts and connecting the two electric circuit parts at the connecting portion.

該電気的接続部材は、金属または合金よりなる複数の金
属部材を、それぞれの金属部材同士を′電気的に絶縁し
、かつ、該金属部材の一端を第1の電気部品側に露出さ
せて、一方、該金属部材の他端を該f52の電気回路部
品側に露出させて、絶縁体中に埋設して構成されており
、かつ、該絶縁体は外部に開口する少なくとも1つの穴
を有しており。
The electrical connection member includes a plurality of metal members made of metal or an alloy, each of which is electrically insulated from each other, and one end of the metal member is exposed to the first electrical component side. On the other hand, the other end of the metal member is exposed to the electric circuit component side of the f52 and embedded in an insulator, and the insulator has at least one hole opening to the outside. I'm here.

第1の電気回路部品の接続部と第1の電気回路部品側に
露出した金属部材の一端とを合金化することにより接続
し、かつ、第2の電気回路部品の接続部と第2の電気回
路部品側に露出した金属部材の一端とを合金化すること
により接続したことを特徴とする電気回路部材にその要
旨を有する。
The connecting portion of the first electric circuit component and one end of the metal member exposed on the first electric circuit component side are connected by alloying, and the connecting portion of the second electric circuit component and the second electric circuit component are connected by alloying. The gist lies in an electric circuit member characterized in that it is connected to one end of a metal member exposed on the side of a circuit component by alloying it.

本発明における電気回路部品としては、例えば、半導体
素子、樹脂回路基板、セラミックtS板、金属基板等の
回路基板(以下単に回路基板ということがある)、リー
ドフレーム等があげられる。すなわち、第1の電気回路
部品としてこれらの中のいずれかの部品を用い、第2の
電気回路部品としてこれらの中のいずれかの部品を用い
ればよい。
Examples of the electric circuit components in the present invention include semiconductor elements, resin circuit boards, ceramic tS plates, circuit boards such as metal boards (hereinafter sometimes simply referred to as circuit boards), lead frames, and the like. That is, any one of these components may be used as the first electrical circuit component, and any one of these components may be used as the second electrical circuit component.

電気回路部品として接続部を有する部品が本発明の対象
となる。接続部の数は問わないが、接続部の数が多けれ
ば多いほど本発明の効果が顕著となる。
The object of the present invention is a component having a connection part as an electric circuit component. Although the number of connection parts does not matter, the greater the number of connection parts, the more remarkable the effects of the present invention will be.

また、接続部の存在位置も問わないが、電気回路部品の
内部に存在するほど本発明の効果が顕著となる。
Further, although the location of the connection portion does not matter, the effect of the present invention becomes more pronounced as the connection portion is located inside the electric circuit component.

本発明では第1の電気回路部品と第2の電気回路部品と
を電気的接続部材を用いて接続する。
In the present invention, a first electrical circuit component and a second electrical circuit component are connected using an electrical connection member.

本発明に係る電気的接続部材は、絶縁体中に複数の金属
部材を埋設して構成されている。金属部材同士はそれぞ
れ絶縁体により絶縁されており、また、金属部材の一端
は第1の電気回路部品側に露出しており、他の一端は第
2の電気回路部品側に露出している。さらに、該絶縁体
はその外部に開口する少なくとも1つの穴を有している
The electrical connection member according to the present invention is constructed by embedding a plurality of metal members in an insulator. The metal members are each insulated by an insulator, and one end of the metal member is exposed to the first electric circuit component side, and the other end is exposed to the second electric circuit component side. Furthermore, the insulator has at least one hole opening to its exterior.

ここで、金属部材の材質としては、金が好ましいが、全
以外の任意の金属あるいは合金を使用することもできる
0例えば、Cu、Ai、Sn。
Here, as the material of the metal member, gold is preferable, but any metal or alloy other than gold may also be used. For example, Cu, Al, Sn.

Pb−5n等の金属あるいは合金があげられる。Examples include metals or alloys such as Pb-5n.

さらに、金属部材の断面は、円形、四角形その他任意の
形状とすることができる。
Furthermore, the cross section of the metal member can be circular, square, or any other arbitrary shape.

また、金属部材の太さは特に限定されない、電気回路部
品の接続部のピッチを考慮して1例えば20ALmφ以
上あるいは20gmφ以下にしてもよい。
Further, the thickness of the metal member is not particularly limited, and may be set to 1, for example, 20 ALmφ or more or 20 gmφ or less, taking into consideration the pitch of the connecting portions of the electric circuit components.

なお、金属部材の露出部は絶縁体と同一面としてもよい
し、また、絶縁体の面から突出させてもよい、この突出
は片面のみでもよいし両面でもよい、さらに突出させた
場合はバンプ状にしてもよい。
Note that the exposed portion of the metal member may be on the same surface as the insulator, or it may be made to protrude from the surface of the insulator. It may be made into a shape.

また、金属部材の間隔は、電気回路部品の接続部同士の
間隔と同一間隔としてもよいし、それより狭い間隔とし
てもよい、狭い間隔とした場合には電気回路部品と電気
的接続部材との位置決めを要することなく、電気回路部
品と電気的接続部材とを接続することが可能となる。
Furthermore, the spacing between the metal members may be the same as the spacing between the connecting parts of the electrical circuit components, or may be narrower than that, and when the spacing is narrower, the spacing between the electrical circuit components and the electrical connecting members may be the same. It becomes possible to connect the electrical circuit component and the electrical connection member without requiring positioning.

また、金属部材は絶縁体中に垂直に配する必要はなく、
第1の電気回路部品側から第2の電気回路部品側に向か
って斜行していてもよい。
Also, metal members do not need to be placed vertically in the insulator;
It may run obliquely from the first electric circuit component side toward the second electric circuit component side.

さらに電気的接続部材は、1層あるいは2層以上の多層
からなるものでもよい。
Furthermore, the electrical connection member may be composed of one layer or multiple layers of two or more layers.

電気的接続部材が有する穴は1つでもよいし複数でもよ
い、その穴の大きさ、形状、位置は、穴のために絶縁体
中に埋設されている金属部材同士が接触し、短絡しない
範囲内ならば任意である。
The electrical connection member may have one or more holes, and the size, shape, and position of the hole should be such that the metal members buried in the insulator come into contact with each other and do not cause a short circuit. If it is within, it is optional.

穴は第1の電気回路部品側から第2の電気回路部品側に
貫通していてもよいし、閉塞していてもよい。この穴の
開口方向は、金属部材の露出方向と平行でもよいし、ま
た、垂直でもよい。
The hole may penetrate from the first electric circuit component side to the second electric circuit component side, or may be closed. The opening direction of this hole may be parallel to or perpendicular to the direction in which the metal member is exposed.

電気的接続部材の絶縁体は絶縁性物質ならば特に限定さ
れない1例えば絶縁性の樹脂を用いればよい、さらに、
樹脂を用いる場合には樹脂の種類も問わない、熱硬化性
樹脂、熱可塑性樹脂のいずれでもよい0例えば、ポリイ
ミド樹脂、ポリフェニレンサルファイド樹脂、ポリエー
テルサルフォン樹脂、ポリエーテルイミド樹脂、ポリス
チレン樹脂、シリコーン樹脂、フッ素樹脂、ポリカーボ
ネート樹脂、ポリジフェニールエーテル樹脂、ポリベン
ジルイミダゾール樹脂、フェノール樹脂、尿素樹脂、メ
ラミン樹脂、アルギッド樹脂、エポキシ樹脂、ポリアミ
ドイミド樹脂、ポリプロブレン樹脂、ポリ塩化ビニル樹
脂、ポリスチレン樹脂その他の樹脂を使用することがで
きる。なお、これらの樹脂の中から、熱伝導性のよい樹
脂を使用すれば、回路基板が熱を持ってもその熱を樹脂
を介して放熱することができるのでより好ましい、さら
に、樹脂として、回路基板と同じかあるいは同程度の熱
膨張率を有するものを選択すれば、熱膨張・熱収縮に基
づく、装置の信頼性の低下を一層防市することが可能と
なる。
The insulator of the electrical connection member is not particularly limited as long as it is an insulating material; for example, an insulating resin may be used;
When using a resin, the type of resin does not matter; it may be either a thermosetting resin or a thermoplastic resin. For example, polyimide resin, polyphenylene sulfide resin, polyether sulfone resin, polyetherimide resin, polystyrene resin, silicone. Resin, fluororesin, polycarbonate resin, polydiphenyl ether resin, polybenzylimidazole resin, phenol resin, urea resin, melamine resin, algide resin, epoxy resin, polyamideimide resin, polyproblene resin, polyvinyl chloride resin, polystyrene resin, etc. Resin can be used. Among these resins, it is more preferable to use a resin with good thermal conductivity because even if the circuit board has heat, the heat can be dissipated through the resin. By selecting a material having the same or similar coefficient of thermal expansion as the substrate, it becomes possible to further prevent a decrease in reliability of the device due to thermal expansion/shrinkage.

本発明ではさらに、第1の電気回路部品の接続部と第1
の電気回路部品側に露出した電気接続部材の金属部材の
一端とを合金化することにより接続し、かつ、第2の電
気回路部品の接続部と第2の電気回路部品側に露出した
電気接続部材の金属部材の一端とを合金化することによ
り接続する。
In the present invention, the connection portion of the first electric circuit component and the first
one end of the metal member of the electrical connection member exposed to the electrical circuit component side is connected by alloying, and the connection portion of the second electrical circuit component and the electrical connection exposed to the second electrical circuit component side. The member is connected to one end of the metal member by alloying the member with one end of the metal member.

すなわち、本発明では、第1の電気回路部品か第2の電
気回路部品かの両方ともに合金化する。
That is, in the present invention, both the first electric circuit component and the second electric circuit component are alloyed.

なお、合金化方法としては、例えば、それぞれ対応する
接続部を接触させた後、適宜の温度において加熱すれば
よい、加熱により、接続部において原子の拡散等が起こ
り、接続部表面に固溶体あるいは金属間化合物よりなる
層が形成され、接続部同士が合金化される。なお、電気
的接続部材の金属部材にAuを使用し、電気回路部品の
接続部にAnを使用した場合には、200〜350℃の
加熱温度が好ましい。
In addition, as an alloying method, for example, the corresponding connection parts may be brought into contact with each other and then heated at an appropriate temperature.Heating causes diffusion of atoms in the connection parts, and a solid solution or metal is formed on the surface of the connection parts. A layer of intercalary compound is formed and the connections are alloyed. In addition, when Au is used for the metal member of the electrical connection member and An is used for the connection part of the electric circuit component, the heating temperature is preferably 200 to 350°C.

[作用] 本発明では、上述した電気的接続部材を使用しているの
で、電気回路部品の接続部を内部に配置することも可能
となり、接続部の数を増加させることができ、ひいては
高密度化が可能となる。
[Function] Since the present invention uses the above-mentioned electrical connection member, it is also possible to arrange the connection parts of the electric circuit components inside, and the number of connection parts can be increased. It becomes possible to

また、電気的接続部材は薄くすることが可能であり、こ
の面からも薄型化が可能となる。
Further, the electrical connection member can be made thinner, and from this point of view as well, it is possible to make the electrical connection member thinner.

さらに、電気的接続部材に使用する金属部材の量は少な
いため、たとえ、高価な金を金属部材として使用したと
してもコストが安いものとなる。
Furthermore, since the amount of metal members used for the electrical connection member is small, the cost is low even if expensive gold is used as the metal member.

本発明では、電気回路部品の両方が、電気接続部材を介
して合金化されており電気回路部品同士が強固(強度的
に強く)かつ確実に接続されるので1機械的に強く、不
良率の極めて低い電気回路部材を得ることができる。
In the present invention, both of the electrical circuit components are alloyed through the electrical connection member, and the electrical circuit components are firmly (strong in terms of strength) and reliably connected to each other. An extremely low cost electric circuit member can be obtained.

また、電気回路部品の両方を、電気的接続部材を介して
合金化するので、電気回路部材の作成工程中及び作成後
において、治具等を使用して電気回路部品を保持する必
要がなく、71!気回路部材の作成及び作成後の管理が
容易である。
Furthermore, since both of the electrical circuit components are alloyed via the electrical connection member, there is no need to use a jig or the like to hold the electrical circuit components during and after the production process of the electrical circuit component. 71! It is easy to create the air circuit member and to manage it after it is created.

電気回路部品の両方が、電気的接続部材を介して合金化
されているので、電気回路部品相互の接触抵抗が一方の
みを合金化した場合に比べてより小さくなる。
Since both of the electrical circuit components are alloyed via the electrical connection member, the contact resistance between the electrical circuit components is smaller than when only one of the electrical circuit components is alloyed.

さらに、本発明においては、電気的接続部材の絶縁体中
に穴が存在するので、電気回路部材あるいは電気的接続
部材に熱が加わっても(組立工程中、あるいは製品の信
頼性試験を行なう際に熱が加わる)、穴が熱応力を緩和
するので、熱応力によって生じることのある電気的接続
部材の切断あるいは、電気的接続部材と電気回路部材部
材との接続部の切断・接触不良を防止することができ、
切断・接触不良によって生じる導通不良あるいは導通困
難という事態を防止することが可能となる。
Furthermore, in the present invention, since the holes are present in the insulator of the electrical connection member, even if heat is applied to the electrical circuit member or the electrical connection member (during the assembly process or during product reliability testing) (heat is applied to), the holes alleviate thermal stress, preventing disconnection of electrical connection members that may occur due to thermal stress, or disconnection or poor contact between electrical connection members and electrical circuit components. can,
It is possible to prevent poor or difficult conduction caused by disconnection or poor contact.

[実施例] (第1実施例) 本発明の第1実施例を第1図及び第2図に基づいて説明
する。
[Example] (First Example) A first example of the present invention will be described based on FIGS. 1 and 2.

本実施例では、接続部102を有する第1の電気回路部
品である回路基板101と、接続部105を有する第2
の電気回路部品である回路基板104とを、両回路基板
101.104を電気的に接続するための電気的接続部
材125を両者の間に介在させて、両回路基板lot、
104の接続部102.105において接続して構成さ
れる電気回路部品造において。
In this embodiment, a circuit board 101, which is a first electric circuit component having a connection part 102, and a second circuit board 101 having a connection part 105 are used.
The circuit board 104, which is an electric circuit component of the circuit board 104, is connected to the circuit board 104 by interposing an electrical connection member 125 between them for electrically connecting both the circuit boards 101 and 104.
In an electric circuit component structure configured by connecting at connection portions 102 and 105 of 104.

該電気的接続部材125は、金属又は合金よりなる複数
の金属部材107を、それぞれの金属部材107同士を
電気的に絶縁し、かつ、該金属部材107の一端を第1
の回路基板101側に露出させて、一方、該金属部材1
07の他端を該第2の回路部基板104側に露出させて
、絶縁体111中に埋設されて構成されており、かつ、
絶縁体111はその外部に開口している穴(第1図には
図示せず)を有しており、 第1の回路基板101の接続部102と第1の回路基板
101側に露出した金属部材107の一端とを合金化す
ることにより接続し、かつ、第2の回路基板104の接
続部105と第2の回路基板104偏に露出した金属部
材107の一端とを合金化することにより接続しである
The electrical connection member 125 electrically insulates the plurality of metal members 107 made of metal or alloy from each other, and connects one end of the metal member 107 to a first
The metal member 1 is exposed on the circuit board 101 side.
07 is embedded in the insulator 111 with the other end exposed to the second circuit board 104 side, and
The insulator 111 has a hole (not shown in FIG. 1) that opens to the outside, and connects the connecting portion 102 of the first circuit board 101 and the metal exposed on the first circuit board 101 side. The connection is made by alloying one end of the member 107, and the connection is made by alloying the connecting portion 105 of the second circuit board 104 and one end of the metal member 107 exposed on the second circuit board 104. It is.

以下に本実施例をより詳細に説明する。This example will be explained in more detail below.

まず、電気的接続部材125の一製造例を説明しつつ電
気的接続部材125を説明する。
First, the electrical connection member 125 will be explained while explaining one manufacturing example of the electrical connection member 125.

第2図に一製造例を示す。FIG. 2 shows one manufacturing example.

まず、第2図(a)に示すように、20ILmφの金等
の金属あるいは合金よりなる金属線121を、ピッチ4
0gmとして棒122に巻き付け、巻き付は後、金属線
121に接触しないように、金属線121の間に棒12
7を差し込む、その後ポリイミド等の樹脂123中に上
記金属線121および棒127を埋め込む、埋め込み後
上記樹脂123を硬化させる。硬化した樹脂123は絶
縁体となる。硬化後、棒127を抜き去る。その後、点
線124の位置でスライス切断し、電気的接続部材12
5を作成する。また、棒127を抜き去った後、その位
置に穴120が形成される。
First, as shown in FIG. 2(a), metal wires 121 made of metal or alloy such as gold and having a diameter of 20 ILmφ are connected at a pitch of 4.
0gm around the rod 122, and after wrapping the rod 12 between the metal wires 121 so as not to touch the metal wires 121.
After that, the metal wire 121 and rod 127 are embedded in a resin 123 such as polyimide, and after embedding, the resin 123 is hardened. The cured resin 123 becomes an insulator. After curing, the rod 127 is removed. Thereafter, the electrical connection member 12 is cut into slices at the dotted line 124.
Create 5. Furthermore, after the rod 127 is removed, a hole 120 is formed at that position.

このようにして作成された電気的接続部材125を第2
図(b)、(C)に示す。
The electrical connection member 125 created in this way is
Shown in Figures (b) and (C).

このように作成された電気的接続部材125において、
金属線121が金属部材107を構成し、樹脂123が
絶縁体111を構成する。
In the electrical connection member 125 created in this way,
The metal wire 121 constitutes the metal member 107, and the resin 123 constitutes the insulator 111.

なお、棒127は上記金属線121と同じ金属線でもよ
いし他の任意の材質・材料でもよい、また棒127を差
し込んでもよいし、棒122に巻き付けてもよい、さら
に、棒127はスライス切断後に抜き去ってもよい。
The rod 127 may be the same metal wire as the metal wire 121, or may be made of any other material.The rod 127 may be inserted or wound around the rod 122.Furthermore, the rod 127 may be cut into slices. You can remove it later.

この電気的接続部材125においては金属部材となる金
属線121同士は樹脂123により電気的に絶縁されて
いる。また、金属線121の一端は回路基板101側に
露出し、他端は回路基板104側に露出している。この
露出している部分はそれぞれ回路基板101,104と
の接続部108.109となる。
In this electrical connection member 125, metal wires 121 serving as metal members are electrically insulated from each other by resin 123. Further, one end of the metal wire 121 is exposed to the circuit board 101 side, and the other end is exposed to the circuit board 104 side. These exposed portions become connection portions 108 and 109 to the circuit boards 101 and 104, respectively.

次に、第1の回路基板101、電気的接続部材125、
第2の回路基板104を用意する0本例で使用する回路
基板101.104は、第1図に示すように、その内部
に多数の接続部102゜105を有している。
Next, the first circuit board 101, the electrical connection member 125,
Preparing the second circuit board 104 The circuit boards 101 and 104 used in this example have a large number of connection parts 102 and 105 therein, as shown in FIG.

なお、第1の回路基板lotの接続部102は、第2の
回路基板104の接続部105及び電気的接続部材12
5の接続部108,109に対応する位置に金属が露出
している。
Note that the connection portion 102 of the first circuit board lot is connected to the connection portion 105 of the second circuit board 104 and the electrical connection member 12.
Metal is exposed at positions corresponding to the connection parts 108 and 109 of No. 5.

第1の回路基板101の接続部102と、電気的接続部
材125の接続部108とを、又は、第2の回路基板1
04の接続部105と電気的接続部材125の接続部1
09が対応するように位置決めを行ない1位置決め後1
両方を合金化して接続する。
Connecting portion 102 of first circuit board 101 and connecting portion 108 of electrical connecting member 125, or
Connection part 1 between the connection part 105 of 04 and the electrical connection member 125
Perform positioning so that 09 corresponds to 1. After positioning, 1.
Alloy and connect both.

ここで、上記第1の回路基板101、電気的接続部材1
25、第2の回路基板104を接続するには次の3方式
が存在するが、そのいずれの方式によってもよい。
Here, the first circuit board 101, the electrical connection member 1
25. There are the following three methods for connecting the second circuit board 104, and any of these methods may be used.

■第1の回路基板101、電気的接地部材125、第2
の回路基板104を位置決めした後、第1の回路基板1
01の接続fi102と電気的接続部材125の接続部
108とを、及び第2の回路基板104の接続部105
と電気的接続部材125の接続部109とを同時に合金
化して接■第1の回路基板101と電気的接続部材12
5とを位置決めし、第1の回路基板101の接続部10
2と電気的接続部材125の接続部10Bとを合金化し
て接続した後、第2の回路基板104を位置決めし、電
気接続部材125の接続部109と第2の回路基板10
4の接続部105を合金化して接続する方法。
■First circuit board 101, electrical grounding member 125, second
After positioning the first circuit board 104, the first circuit board 1
01 connection fi 102 and the connection part 108 of the electrical connection member 125, and the connection part 105 of the second circuit board 104.
and the connection portion 109 of the electrical connection member 125 are simultaneously alloyed and connected.
5 and the connecting portion 10 of the first circuit board 101.
2 and the connection portion 10B of the electrical connection member 125 are alloyed and connected, the second circuit board 104 is positioned, and the connection portion 109 of the electrical connection member 125 and the second circuit board 10 are connected.
A method of alloying and connecting the connecting portion 105 of No. 4.

■第2の回路基板104と電気的接続部材125とを位
置決めし、第2の回路基板104の接続部105と電気
的接続部材l・25の接続部109とを合金化して接続
した後、第1の回路基板101を位置決めし、電気的接
続部材125の接続部108と第1の回路基板101の
接続部102を合金化して接続する方法。
■ After positioning the second circuit board 104 and the electrical connection member 125 and alloying and connecting the connection part 105 of the second circuit board 104 and the connection part 109 of the electrical connection member 1/25, A method of positioning a first circuit board 101 and alloying and connecting the connection part 108 of the electrical connection member 125 and the connection part 102 of the first circuit board 101.

以上のようにして作成した電気回路部材につきその接続
部の接続性を調べたところ高い信頼性をもって接続され
ていた。
When the connectivity of the connection portions of the electrical circuit members produced as described above was examined, the connections were found to be highly reliable.

また、加熱によっても導通不良・困難という事態は発生
しなかった。
In addition, no conduction failure or difficulty occurred due to heating.

(第2実施例) 第3図に第2実施例を示す。(Second example) FIG. 3 shows a second embodiment.

本例は、接続部52を有する第1の電気回路部品として
回路基板51を、第2の電気回路部品として内部に多数
の接続部5を有する半導体素子4を使用した。
In this example, a circuit board 51 is used as a first electric circuit component having a connection part 52, and a semiconductor element 4 having a large number of connection parts 5 therein is used as a second electric circuit component.

合金化は、半導体素子4の接続部5及び回路基板51の
接続部52と、穴120を有する電気的接続部材125
の接続部54との間で行なった。
The alloying is performed on the connecting portion 5 of the semiconductor element 4, the connecting portion 52 of the circuit board 51, and the electrical connecting member 125 having the hole 120.
This was done between the connecting portion 54 of the

なお、穴120を持った電気的接続部材125としては
半導体素子4に対応する寸法のものを使用した。
Note that as the electrical connection member 125 having the hole 120, one having a size corresponding to the semiconductor element 4 was used.

合金化して接続後は回路基板51の下面にリードフレー
ム55を接続した。
After alloying and connecting, a lead frame 55 was connected to the lower surface of the circuit board 51.

他の点は第1実施例と同様である。Other points are similar to the first embodiment.

本例においても接続部は高い信頼性を持って接続されて
いた。また、加熱によっても導通不良・困難という事態
は発生しなかった。
In this example as well, the connection section was connected with high reliability. In addition, no conduction failure or difficulty occurred due to heating.

(第3実施例) 第4図に第3実施例を示す。(Third example) FIG. 4 shows a third embodiment.

本例は、第1の電気回路部品が半導体素子4であり、第
2の電気回路部品が回路基板51である例である。
In this example, the first electric circuit component is the semiconductor element 4, and the second electric circuit component is the circuit board 51.

なお、接続後は回路基板51の上面にリードフレーム1
を接続し、封止剤63により封止した。
Note that after connection, the lead frame 1 is placed on the top surface of the circuit board 51.
were connected and sealed with a sealant 63.

他の点は第1実施例と同様である。Other points are similar to the first embodiment.

本例においても接続部は高い信頼性を持って接続されて
いた。また、加熱によっても導通不良会困難という1s
態は発生しなかった。
In this example as well, the connection section was connected with high reliability. In addition, heating also causes poor conductivity during the first second.
No condition occurred.

(第4実施例) 第5図に第4実施例を示す。(Fourth example) FIG. 5 shows a fourth embodiment.

本例は、第1の電気回路部品が半導体素子4゛であり、
第2の電気回路部品が半導体素子4である例であり、本
例では、電気的接続部材として半導体素子4に対応した
寸法のものを使用し、リードフレーム1を電気的接続部
材125の第1の半導体素子4′側に露出した金属部材
に接続している。
In this example, the first electric circuit component is a semiconductor element 4゛,
This is an example in which the second electric circuit component is the semiconductor element 4. In this example, an electrical connection member having a size corresponding to the semiconductor element 4 is used, and the lead frame 1 is connected to the first electrical connection member 125. It is connected to the metal member exposed on the semiconductor element 4' side.

他は第3実施例と同様である。The rest is the same as the third embodiment.

本例においても接続部は高い信頼性を持って接続されて
いた。また、加熱によっても導通不良や困難という事態
は発生しなかった。
In this example as well, the connection section was connected with high reliability. In addition, there were no problems with poor conductivity or difficulties due to heating.

(第5実施例) 第6図に第5実施例を示す。(Fifth example) FIG. 6 shows a fifth embodiment.

第5実施例は、第1の電気回路部品、第2の電気回路部
品として、接続部以外の部分が絶縁膜103.106で
覆われている回路基板101゜104を使用している例
である。
The fifth embodiment is an example in which circuit boards 101 and 104 whose parts other than the connecting portions are covered with insulating films 103 and 106 are used as the first electric circuit component and the second electric circuit component. .

また、電気的接続部材としては第7図に示すものを使用
した。すなわち、第7図に示す、穴120を有する電気
的接続部材125は、金属部材107の露出している部
分が樹脂絶縁体111の面から突出している。このよう
な電気的接続部材125の作成は、例えば1次の方法に
よればよい。
Further, as an electrical connection member, one shown in FIG. 7 was used. That is, in the electrical connection member 125 having the hole 120 shown in FIG. 7, the exposed portion of the metal member 107 protrudes from the surface of the resin insulator 111. The electrical connection member 125 may be created by, for example, the following method.

まず、第1実施例で述べた方法により、第2図(b)、
(c)に示す電気的接続部材を用意する0次にこの電気
的接続部材の両面を、金属線121が、ポリイミド樹脂
123から10ルm程度突出するまでエツチングすれば
よい。
First, by the method described in the first embodiment, as shown in FIG. 2(b),
After preparing the electrical connection member shown in (c), both surfaces of the electrical connection member may be etched until the metal wire 121 protrudes from the polyimide resin 123 by about 10 m.

なお、本実施例では金属線121の突出量を1101L
としたが、いかなる量でもよい。
Note that in this embodiment, the protrusion amount of the metal wire 121 is 1101L.
However, any amount may be used.

また、金属線121を突出させる方法としてはエツチン
グに限らず、他の化学的な方法又は機械的な方法を使用
してもよい。
Furthermore, the method for making the metal wire 121 protrude is not limited to etching, and other chemical or mechanical methods may be used.

他の点は第1実施例と同様である。Other points are similar to the first embodiment.

なお、突出部を、電気的接続部材125を金属線121
の位置に凹部を持った型に挟み込み、金属線121の突
起126をつぶすことにより第8図に示すようなバンプ
150を形成してもよい。
Note that the protruding portion and the electrical connection member 125 are connected to the metal wire 121.
A bump 150 as shown in FIG. 8 may be formed by inserting the metal wire 121 into a mold having a recess at the position and crushing the protrusion 126 of the metal wire 121.

この場合金属線121は絶縁体111から脱落しにくく
なる。
In this case, the metal wire 121 becomes difficult to fall off from the insulator 111.

なお1本例でも、金属1ji121が金属部材107を
構成し、さらに、樹脂123が絶縁体111を構成する
In this example as well, the metal 1ji 121 constitutes the metal member 107, and the resin 123 constitutes the insulator 111.

なお、バンプを作成するのには突起を熱で溶融させ、バ
ンプを作成してもよいし、他のいかなる方法でもよい。
Note that the bumps may be created by melting the protrusions with heat, or any other method may be used.

本例においても接続部は高い信頼性を持って接続されて
いた。また、加熱によっても導通不良書困難という事態
は発生しなかった。
In this example as well, the connection section was connected with high reliability. In addition, even with heating, there was no problem of poor conductivity.

(第6実施例) 第9図に第6実施例を示す。(6th example) FIG. 9 shows a sixth embodiment.

本例は、第1の電気回路部品として半導体素子4を使用
し、第2の電気部品としてリードフレーム1を使用した
例である。
In this example, a semiconductor element 4 is used as the first electrical circuit component, and a lead frame 1 is used as the second electrical component.

他の点は第5実施例と同様である。Other points are similar to the fifth embodiment.

本例においても接続部は高い信頼性を持って接続されて
いた。また、加熱によっても導通不良書困難という事態
は発生しなかった。
In this example as well, the connection section was connected with high reliability. In addition, even with heating, there was no problem of poor conductivity.

(第7実施例) 第10図に第7実施例を示す。(Seventh Example) FIG. 10 shows a seventh embodiment.

本例においては、電気的接続部材125は、第5実施例
に示した電気的接続部材と異なる0才なわち1本例の電
気的接続部材125においては。
In this example, the electrical connection member 125 is different from the electrical connection member shown in the fifth embodiment, that is, the electrical connection member 125 of this example is different from the electrical connection member shown in the fifth embodiment.

全屈部材同士のピッチが第5実施例で示したものよりも
狭くなっている。すなわち、本例では、第1の回路基板
接続部の間隔よりも狡い間隔に金属部材107同士のピ
ッチを設定しである。
The pitch between the fully bent members is narrower than that shown in the fifth embodiment. That is, in this example, the pitch between the metal members 107 is set to a spacing that is more precise than the spacing between the first circuit board connecting portions.

つまり、第5実施例では、第1の回路基板101と第2
の回路基板104との接続位置に電気的接続部材125
の接続位置を配設したため。
That is, in the fifth embodiment, the first circuit board 101 and the second
An electrical connection member 125 is located at the connection position with the circuit board 104.
Because the connection position was arranged.

電気的接続部材125の位置決めが必要であったが、本
例では、第1の回路基板101と第2の回路基板104
との位置決めは必要であるが、電気的接続部材125と
の位置決めは不要となる。そのため、第1の回路基板l
O1と第2の回路基板104の接続寸法(dll、pH
)と電気的接続部材の接続寸法(d12.PI3)を適
切な値に選ぶことにより位置決めなしで接続することも
可能である。
Although it was necessary to position the electrical connection member 125, in this example, the first circuit board 101 and the second circuit board 104
Although positioning with the electrical connection member 125 is necessary, positioning with the electrical connection member 125 is not necessary. Therefore, the first circuit board l
Connection dimensions between O1 and second circuit board 104 (dll, pH
) and the connection dimensions (d12.PI3) of the electrical connection member to appropriate values, it is also possible to connect without positioning.

本例においても接続部は高い信頼性を持って接続されて
いた。また、加熱によっても導通不良・困難というπ態
は発生しなかった。
In this example as well, the connection section was connected with high reliability. In addition, the π state of poor or difficult conduction did not occur even after heating.

(第8実施例) 第11図に第8実施例に使用する電気的接続部材を示す
(Eighth Example) FIG. 11 shows an electrical connection member used in the eighth example.

第11図(a)は電気的接続部材の斜視図、第11図(
b)は上記電気的接続部材の断面図である。
FIG. 11(a) is a perspective view of the electrical connection member, FIG.
b) is a sectional view of the electrical connection member.

かかる電気的接続部材の作成例を次に述べる。An example of making such an electrical connection member will be described below.

まず、第1実施例に示した製法で、穴120を有する電
気的接続部材128,129,130を3枚用意する。
First, three electrical connection members 128, 129, and 130 having holes 120 are prepared using the manufacturing method shown in the first embodiment.

1枚目12Bの金属線121の位置はm行n列目で、m
a、nbだけ中心から変位している。2枚目129の金
属線121の位置はm行n列目でmac、nbcだけ中
心から変位している。3枚目130の金属線121の位
置はm行n列でmad、nbdだけ中心から変位してい
る・ a・b、c、dの値は上下の金属121は導通す
るが左右には互いに電気的に導通しないような値をとる
。3枚の電気的接続部材を位置決めし、熱圧着等の方法
を用い植層し、電気的接続部材125を作成する。
The position of the metal wire 121 in the first sheet 12B is m row and n column, m
It is displaced from the center by a and nb. The position of the metal wire 121 in the second sheet 129 is in the mth row and nth column, and is displaced from the center by mac and nbc. The position of the metal wire 121 in the third sheet 130 is m rows and n columns, and is displaced from the center by mad and nbd.The values of a, b, c, and d indicate that the upper and lower metal wires 121 are electrically conductive, but the left and right sides are electrically connected to each other. It takes a value that does not cause electrical conduction. The three electrical connection members are positioned and layered using a method such as thermocompression bonding to create the electrical connection member 125.

なお、本例においては、電気的接続部材の金属の位置を
m行n列というように規則をもった位置を選んだが、上
下の金属が導通し、左右には互いに電気的に導通しない
ようにすればランダムでもよい。
In addition, in this example, the positions of the metals of the electrical connection members were selected according to rules such as m rows and n columns, but the metals on the top and bottom were conductive, and the left and right sides were not electrically conductive with each other. It can be random if you do.

また、本例では3層積層する場合について述べたが、2
枚以上であれば何枚でもよい、また、熱圧着の方法を用
いて植層すると述べたが、圧着、接着等の方法を用いて
もよい、さらに、本例の電気的接続部材を加工して第7
図に示すように突起を設けてもよいし、第8図に示した
ようにバンブ150を設けてもよい。
In addition, although this example describes the case where three layers are laminated, two
Any number of layers may be used as long as the electrical connection member of this example is processed.Although it has been described that the layers are planted using a thermocompression bonding method, methods such as compression bonding or gluing may also be used. 7th
A protrusion may be provided as shown in the figure, or a bump 150 may be provided as shown in FIG.

本例においても接続部は高い信頼性を持って接続されて
いた。また、加熱によっても導通不良拳困難という事態
は発生しなかった。
In this example as well, the connection section was connected with high reliability. In addition, even with heating, there was no problem of poor conductivity.

(第9実施例) 第12図に第9実施例に使用する電気的接続部材を示す
(Ninth Example) FIG. 12 shows an electrical connection member used in the ninth example.

第12図(a)は電気的接続部材の製造途中の断面図、
第12図(b)は上記電気的接続部材の斜視図、第12
図(c)は上記の断面図である。
FIG. 12(a) is a cross-sectional view of the electrical connection member during manufacture;
FIG. 12(b) is a perspective view of the electrical connection member,
Figure (c) is the above sectional view.

まず、金属線案内板131,132を用意する。そして
、金属線案内板131.132にあけられている所望の
穴133.134に金属線121および棒127を通し
、所望の張力で張る。その後、金属線案内板131.1
32間に樹脂123を流し込み、硬化させる。その後、
棒127を抜き去る。しかる後、案内板を取りはずし、
電気的接続部材125を作成する。棒127を抜き去っ
た後、その位置に穴120が形成される。なお、棒12
7は上記した金属1!121と同じ金属線でもよいし、
他の任意の材料でもよい。
First, metal wire guide plates 131 and 132 are prepared. Then, the metal wire 121 and rod 127 are passed through desired holes 133 and 134 made in the metal wire guide plates 131 and 132, and stretched to a desired tension. After that, the metal wire guide plate 131.1
Resin 123 is poured between 32 and hardened. after that,
Remove the rod 127. After that, remove the information board and
Electrical connection member 125 is created. After removing the rod 127, a hole 120 is formed at that position. In addition, rod 12
7 may be the same metal wire as the metal 1!121 mentioned above,
Any other material may also be used.

また、棒127は案内板を取りはずした後に抜き去って
もよい、また、本例の電気的接続部材を加工して、第7
図に示すように突起を設けてもよいし、第8図に示すよ
うにバンプ150を設けてもよい。
Further, the rod 127 may be removed after removing the guide plate, or the electrical connection member of this example may be processed to form the seventh
A protrusion may be provided as shown in the figure, or a bump 150 may be provided as shown in FIG.

本実施例の第1の回路部品及び第2の電気回路部品は、
それぞれ、半導体素子1回路基板、リードフレーム等の
回路基材のうちの1つである。
The first circuit component and the second electric circuit component of this example are:
Each of them is one of circuit base materials such as a semiconductor element, a circuit board, and a lead frame.

本例においても接続部は高い信頼性を持って接続されて
いた。また、加熱によっても導通不良・困難という事態
は発生しなかった。
In this example as well, the connection section was connected with high reliability. In addition, no conduction failure or difficulty occurred due to heating.

[発明の効果] 本発明は以上のように構成したので次の数々の効果が得
られる。
[Effects of the Invention] Since the present invention is configured as described above, the following numerous effects can be obtained.

1、半導体素子と回路基板、リードフレーム等の回路基
材の接続に関し、信頼性の高い接続が得られる。従って
、従来用いられてきたワイヤポンディング方式、TAB
方式、CCB方式を置き変えることが可能となる。
1. Highly reliable connections between semiconductor elements and circuit substrates such as circuit boards and lead frames can be obtained. Therefore, the conventionally used wire bonding method, TAB
It becomes possible to replace the CCB method.

2、本発明によると電気回路部品の接続部をいかなる位
置(特に内部)にも配置することができることからワイ
ヤポンディング方式、TAB方式よりもさらに多点接続
が可能となり、多ピン数接続向きの方式となる。
2. According to the present invention, the connection part of the electric circuit component can be placed in any position (especially inside), so it is possible to connect at more points than the wire bonding method or the TAB method, and it is suitable for connection with a large number of pins. This is the method.

さらに電気的接続部材の隣接金属間に絶縁物質が存在す
ることにより隣接金属間の電気的導通しないことよりC
CB方式よりもさらに多点接続が可能となる。
Furthermore, due to the presence of an insulating material between adjacent metals of the electrical connection member, there is no electrical conduction between the adjacent metals.
More multi-point connections are possible than with the CB method.

3、電気的接続部材において使用される金属部材の量は
従来に比べ微量であるため、仮に金属部材に金等の高価
な金属を使用しても従来より安価となる。
3. Since the amount of metal members used in the electrical connection member is small compared to the conventional one, even if expensive metal such as gold is used for the metal member, it will be cheaper than the conventional one.

4、高密度の半導体装置等が得られる。4. High-density semiconductor devices and the like can be obtained.

5、電気回路部品の両方が、電気接続部材を介して合金
化されており電気回路部品同士が強固(強度的に強く)
かつ確実に接続されるので、機械的に強く、不良率の極
めて低い電気回路部材を得ることができる。
5. Both electrical circuit components are alloyed through electrical connection members, making them strong (strong in terms of strength)
In addition, since the connection is reliable, it is possible to obtain an electrical circuit member that is mechanically strong and has an extremely low defective rate.

6、電気回路部品の両方を、電気的接続部材を介して合
金化するので、電気回路部材の作成工程中及び作成後に
おいて、治具等を使用して電気回路部品を保持する必要
がなく、電気回路部材の作成及び作成後の管理が容易で
ある。
6. Since both the electrical circuit components are alloyed via the electrical connection member, there is no need to use a jig or the like to hold the electrical circuit components during and after the production process of the electrical circuit components. It is easy to create electric circuit members and to manage them after they are created.

7、電気回路部品の両方が、電気的接続部材を介して合
金化されているので、電気回路部品相互の接触抵抗が一
方のみを合金化した場合に比べてより小さくなる。
7. Since both of the electrical circuit components are alloyed via the electrical connection member, the contact resistance between the electrical circuit components is smaller than when only one of them is alloyed.

8、電気的接続部材の電気的絶縁物質として熱伝導性の
良い材料を選択することにより、電気回路部品からの放
熱性が良好となり、放熱性が良い半導体装置が得られる
8. By selecting a material with good thermal conductivity as the electrical insulating material of the electrical connection member, heat dissipation from the electric circuit components becomes good, and a semiconductor device with good heat dissipation can be obtained.

9.7ft気回路部材あるいは電気的接続部材に熱が加
わった場合であっても、穴が熱応力を緩和し、熱応力に
よって発生することのある金属部材の断線・接触不良を
防止することができる。なお、かかる効果は、第1の電
気回路部品と、第2の電気回路部品との熱膨張率に差が
ある場合に顕著である。
Even if heat is applied to the 9.7ft air circuit member or electrical connection member, the holes will alleviate thermal stress and prevent disconnection and poor contact of metal members that may occur due to thermal stress. can. Note that this effect is remarkable when there is a difference in coefficient of thermal expansion between the first electric circuit component and the second electric circuit component.

もちろん、電気的接続部材の電気的絶縁物質として半導
体素子及び回路基材と同じかあるいは同程度の熱膨張率
を持つ材料を選択することにより信頼性の良い半導体装
置が得られる。
Of course, a highly reliable semiconductor device can be obtained by selecting a material having the same or similar coefficient of thermal expansion as the semiconductor element and the circuit substrate as the electrically insulating material of the electrical connection member.

なお、電気的接続部材の絶縁体中に他の物質を埋めこん
だり、積層することにより、放熱性の良い、低応力でし
かもシールド効率が得られる電気回路部材が得られる。
By embedding or laminating other substances in the insulator of the electrical connection member, an electrical circuit member with good heat dissipation, low stress, and shielding efficiency can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は第1実施例を示す断面図である。第1図(a)
は接続前の状態を示し、第2図(b)は接続後の状態を
示す、第2図は第1実施例に使用する電気的接続部材の
一製造方法例を説明するための図であり、第2図(a)
は断面図、第2図(b)は斜視図、第2図(C)は断面
図である。 第3図は第2実施例を示し、第3図(a)は斜視図、第
3図(b)は断面図である。第4図は第3実施例を示す
断面図である。第5図は第4実施例を示す断面図である
。第6図はt55実施例を示し、第6図(a)は接続前
の状態を示す断面図であり第6図(b)は接続後の状態
を示す断面図である。第7図及び第8図も第5実施例を
示し、第7図(a)及び第8図(a)は斜視図であり、
第7図(b)及び第8図(b)は断面図である。第9図
は第6実施例を示し、第9図(a)は接続前の状態を示
す斜視図であり、第9図(b)は接続後の状態を示す断
面図である。第1O図は第7実施例を示す断面図であり
、第10図(a)は接続前の状態を示し、第10図(b
)は接続後の状態を示す、第11図は第8実施例に係る
電気的接続部材を示し、第11図(a)は斜視図であり
、第11図(b)は断面図である。第12図は第9実施
例に係る電気的接続部材の一製造例を示し、第12図(
a)、(c)は断面図であり、第12図(b)は斜視図
である。第13図から第20図までは従来例を示し、第
14図を除き断面図であり、t514図は平面透視図で
ある。 1・・リードフレーム、2・Φリードフレームの素子搭
載部、3・・銀ペースト、4,4′・・半導体素子、5
.5′・・半導体素子の接続部、6・・リードフレーム
の接続部、7・・極細金属線、8・・樹脂、9・・半導
体装置、10・・半導体素子の外周縁部、11・・リー
ドフレームの素子搭載部の外周縁部、16・・キャリア
フィルム基板、17争・キャリアフィルム基板のインナ
ーリード部、20・・樹脂、21・・樹脂、31・・半
田バンブ、32・・基板、33・・基板の接続部、54
拳・電気的vc続顔部材接続部、55・・リードフレー
ム、63@・M止材、7o。 70゛拳・金属材、71.71’  番・絶縁膜、72
.72°・・絶縁膜の露出面、73,73゜・・金属材
の露出面、75.75° ・・回路基材、76.76’
  ・・回路基材の接続部、77会・異方性導電膜の絶
縁物質、78・・異方性導電膜、79・・導電粒子、8
1・・エラスチックコネクタの絶縁物質、82・・エラ
スチックコネクタの金属線、83・・エラスチックコネ
クタ、101・・回路基板、102・・接続部、103
・・絶縁膜、106・・絶縁膜、104・・回路基板、
lO5・・接続部、107金属部材、lO8・・接続部
、109・・接続部、111・・絶縁体、120・・穴
、121・・金属線、122・・棒%123・・樹脂、
124・・点線、125・・電気的接続部材、126・
・突起、127争・棒、128,129,130@Φ電
気的接続部材、131.132・・金属線案内板、13
3.134−−穴、150◆警バンプ。 第1図(a) 第1図(b) 第2図(c) 第3図(a) 第3図(b) 第4図 第5図 第6図(a) 第6図(b) 第7図(a) 第7図(b) 第9図(a) 第9図(b) 第10図(a) 第10図(b) 第11図(a) 第11図(b) 第12図(a) P)1 第13図 第14図 第15図 第16図 131pj 第17図 第旧図
FIG. 1 is a sectional view showing a first embodiment. Figure 1(a)
2 shows the state before connection, and FIG. 2(b) shows the state after connection. FIG. 2 is a diagram for explaining an example of a manufacturing method of the electrical connection member used in the first embodiment. , Figure 2(a)
is a sectional view, FIG. 2(b) is a perspective view, and FIG. 2(C) is a sectional view. FIG. 3 shows a second embodiment, with FIG. 3(a) being a perspective view and FIG. 3(b) being a sectional view. FIG. 4 is a sectional view showing the third embodiment. FIG. 5 is a sectional view showing the fourth embodiment. 6 shows a t55 embodiment, FIG. 6(a) is a sectional view showing the state before connection, and FIG. 6(b) is a sectional view showing the state after connection. 7 and 8 also show the fifth embodiment, and FIG. 7(a) and FIG. 8(a) are perspective views,
FIG. 7(b) and FIG. 8(b) are cross-sectional views. 9 shows a sixth embodiment, FIG. 9(a) is a perspective view showing the state before connection, and FIG. 9(b) is a sectional view showing the state after connection. FIG. 10 is a sectional view showing the seventh embodiment, FIG. 10(a) shows the state before connection, and FIG. 10(b)
) shows the state after connection, FIG. 11 shows the electrical connection member according to the eighth embodiment, FIG. 11(a) is a perspective view, and FIG. 11(b) is a sectional view. FIG. 12 shows an example of manufacturing an electrical connection member according to the ninth embodiment, and FIG.
12(a) and 12(c) are cross-sectional views, and FIG. 12(b) is a perspective view. 13 to 20 show conventional examples, except for FIG. 14, which are cross-sectional views, and FIG. t514 is a plan perspective view. 1. Lead frame, 2. Element mounting part of Φ lead frame, 3. Silver paste, 4, 4'... Semiconductor element, 5
.. 5'... Connecting part of semiconductor element, 6... Connecting part of lead frame, 7... Ultrafine metal wire, 8... Resin, 9... Semiconductor device, 10... Outer periphery of semiconductor element, 11... Outer periphery of element mounting portion of lead frame, 16. Carrier film substrate, 17. Inner lead portion of carrier film substrate, 20. Resin, 21. Resin, 31. Solder bump, 32. Substrate, 33... Connection part of the board, 54
Fist/electrical VC connection face member connection portion, 55...Lead frame, 63@・M retaining material, 7o. 70' fist, metal material, 71.71', insulating film, 72
.. 72°...Exposed surface of insulating film, 73,73°...Exposed surface of metal material, 75.75°...Circuit base material, 76.76'
・・Connection part of circuit base material, 77・Insulating material of anisotropic conductive film, 78・・Anisotropic conductive film, 79・・Conductive particle, 8
1...Insulating material of elastic connector, 82...Metal wire of elastic connector, 83...Elastic connector, 101...Circuit board, 102...Connection part, 103
...Insulating film, 106...Insulating film, 104...Circuit board,
lO5...Connection part, 107 Metal member, lO8...Connection part, 109...Connection part, 111...Insulator, 120...Hole, 121...Metal wire, 122...Bar% 123...Resin,
124... Dotted line, 125... Electrical connection member, 126...
・Protrusion, 127 ・Rod, 128, 129, 130 @Φ Electrical connection member, 131.132...Metal wire guide plate, 13
3.134--hole, 150◆police bump. Figure 1 (a) Figure 1 (b) Figure 2 (c) Figure 3 (a) Figure 3 (b) Figure 4 Figure 5 Figure 6 (a) Figure 6 (b) Figure 7 Figure (a) Figure 7 (b) Figure 9 (a) Figure 9 (b) Figure 10 (a) Figure 10 (b) Figure 11 (a) Figure 11 (b) Figure 12 ( a) P) 1 Figure 13 Figure 14 Figure 15 Figure 16 131pj Figure 17 Old diagram

Claims (1)

【特許請求の範囲】 1、接続部を有する第1の電気回路部品と、接続部を有
する第2の電気回路部品とを両電気回路部品を電気的に
接続するための電気的接続部材を両者の間に介入させて
、両電気回路部品の接続部において接続して構成される
電気回路部材において、 該電気的接続部材は、金属または合金よりなる複数の金
属部材を、それぞれの金属部材同士を電気的に絶縁し、
かつ、該金属部材の一端を第1の電気部品側に露出させ
て、一方、該金属部材の他端を該第2の電気回路部品側
に露出させて、絶縁体中に埋設して構成されており、か
つ、該絶縁体は外部に開口する少なくとも1つの穴を有
しており、 第1の電気回路部品の接続部と第1の電気回路部品側に
露出した金属部材の一端とを合金化することにより接続
し、かつ、第2の電気回路部品の接続部と第2の電気回
路部品側に露出した金属部材の一端とを合金化すること
により接続したことを特徴とする電気回路部材。 2、第1の電気回路部品及び第2の電気回路部品は、そ
れぞれ半導体素子、回路基板やリードフレーム等の回路
基材のうち1つである特許請求範囲第1項記載の電気回
路部材。
[Claims] 1. An electrical connection member for electrically connecting a first electric circuit component having a connecting portion and a second electric circuit component having a connecting portion to both of them. In an electric circuit member constructed by intervening between the two electric circuit parts and connecting them at the connecting part, the electric connecting member connects a plurality of metal members made of metal or an alloy to each other. electrically isolated,
and one end of the metal member is exposed to the first electric component side, while the other end of the metal member is exposed to the second electric circuit component side, and is embedded in an insulator. and the insulator has at least one hole opening to the outside, and the connecting portion of the first electric circuit component and one end of the metal member exposed on the side of the first electric circuit component are connected by an alloy. An electric circuit member characterized in that the connection is made by alloying the connecting portion of the second electric circuit component and one end of the metal member exposed on the side of the second electric circuit component. . 2. The electric circuit member according to claim 1, wherein the first electric circuit component and the second electric circuit component are each one of a semiconductor element, a circuit substrate such as a circuit board, or a lead frame.
JP5710087A 1987-03-12 1987-03-12 Electric circuit member Pending JPS63224235A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5710087A JPS63224235A (en) 1987-03-12 1987-03-12 Electric circuit member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5710087A JPS63224235A (en) 1987-03-12 1987-03-12 Electric circuit member

Publications (1)

Publication Number Publication Date
JPS63224235A true JPS63224235A (en) 1988-09-19

Family

ID=13046082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5710087A Pending JPS63224235A (en) 1987-03-12 1987-03-12 Electric circuit member

Country Status (1)

Country Link
JP (1) JPS63224235A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5135606A (en) * 1989-12-08 1992-08-04 Canon Kabushiki Kaisha Process for preparing electrical connecting member
US5174766A (en) * 1990-05-11 1992-12-29 Canon Kabushiki Kaisha Electrical connecting member and electric circuit member
US5323535A (en) * 1991-02-25 1994-06-28 Canon Kabushiki Kaisha Electrical connecting member and method of manufacturing the same
US5379515A (en) * 1989-12-11 1995-01-10 Canon Kabushiki Kaisha Process for preparing electrical connecting member
JPH08162498A (en) * 1994-12-02 1996-06-21 Nec Corp Mounting of semiconductor element
US5819406A (en) * 1990-08-29 1998-10-13 Canon Kabushiki Kaisha Method for forming an electrical circuit member
US6015081A (en) * 1991-02-25 2000-01-18 Canon Kabushiki Kaisha Electrical connections using deforming compression

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5135606A (en) * 1989-12-08 1992-08-04 Canon Kabushiki Kaisha Process for preparing electrical connecting member
US5379515A (en) * 1989-12-11 1995-01-10 Canon Kabushiki Kaisha Process for preparing electrical connecting member
US5174766A (en) * 1990-05-11 1992-12-29 Canon Kabushiki Kaisha Electrical connecting member and electric circuit member
US5819406A (en) * 1990-08-29 1998-10-13 Canon Kabushiki Kaisha Method for forming an electrical circuit member
US5323535A (en) * 1991-02-25 1994-06-28 Canon Kabushiki Kaisha Electrical connecting member and method of manufacturing the same
US6015081A (en) * 1991-02-25 2000-01-18 Canon Kabushiki Kaisha Electrical connections using deforming compression
JPH08162498A (en) * 1994-12-02 1996-06-21 Nec Corp Mounting of semiconductor element

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