JPS63231890A - Electric connection member and electric circuit member employing the same - Google Patents

Electric connection member and electric circuit member employing the same

Info

Publication number
JPS63231890A
JPS63231890A JP6520987A JP6520987A JPS63231890A JP S63231890 A JPS63231890 A JP S63231890A JP 6520987 A JP6520987 A JP 6520987A JP 6520987 A JP6520987 A JP 6520987A JP S63231890 A JPS63231890 A JP S63231890A
Authority
JP
Japan
Prior art keywords
electric circuit
electrical
circuit component
metal
electrical connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6520987A
Other languages
Japanese (ja)
Inventor
吉沢 徹夫
秀之 西田
昌明 今泉
市田 安照
小西 正暉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP6520987A priority Critical patent/JPS63231890A/en
Priority to EP98102122A priority patent/EP0854506A3/en
Priority to EP88103400A priority patent/EP0284820A3/en
Publication of JPS63231890A publication Critical patent/JPS63231890A/en
Priority to US08/597,383 priority patent/US5967804A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 [産業上の利用分野J 本発明は、電気的接続部材及びそれを用いた電気回路部
材に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application J] The present invention relates to an electrical connection member and an electrical circuit member using the same.

[従来技術] 従来、電気回路部品同士を電気的に接続して構成される
電気回路部材に関する技術としては以下に述べる技術が
知られている。
[Prior Art] Conventionally, the following techniques are known as techniques related to electric circuit members configured by electrically connecting electric circuit components.

■ワイヤポンディング方法。■Wire bonding method.

第13図及び第14図はワイヤポンディング方法によっ
て接続され、封止された半導体装置の代表例を示してお
り、以下、第13図及び第14図に基づきワイヤポンデ
ィング方法を説明する。
FIGS. 13 and 14 show typical examples of semiconductor devices connected and sealed by the wire bonding method, and the wire bonding method will be explained below based on FIGS. 13 and 14.

この方法は、Agペースト3等を用いて半導体素子4を
素子搭載部2に固定支持し、次いで、半導体素子4の接
続部5と、リードフレーム1の所望の接続部6とを金等
の極細金属線7を用いて電気的に接続する方法である。
In this method, the semiconductor element 4 is fixedly supported on the element mounting part 2 using Ag paste 3 or the like, and then the connection part 5 of the semiconductor element 4 and the desired connection part 6 of the lead frame 1 are connected with ultrafine material such as gold. This is a method of electrically connecting using metal wires 7.

なお、接続後は、トランスファーモールド法等の方法で
樹脂8を用いて半導体素子4とリードフレームlを封止
し、その後、樹脂對止部分から外に伸びたリードフレー
ム1の不要部分を切断し、所望の形に曲げ半導体装置9
を作る。
After connection, the semiconductor element 4 and the lead frame 1 are sealed using a resin 8 using a method such as a transfer molding method, and then unnecessary parts of the lead frame 1 extending outside from the resin sealing part are cut off. , bend the semiconductor device 9 into the desired shape.
make.

■T A B (Tape Automated Ba
nding)法(例えば、特開昭59−139636号
公報)第15図はTAB法により接続され封止された半
導体装置の代表例を示す。
■T A B (Tape Automated Ba
FIG. 15 shows a typical example of a semiconductor device connected and sealed by the TAB method.

この方法は、テープキャリア方式による自動ポンディン
グ方法である。すなわち、第15図に基づいて説明する
と、キャリアフィルム基板16と半導体素子4とを位置
決めした後、キャリアフィルム基板16のインナーリー
ド部17と半導体素子4の接続部5とを熱圧着すること
により接続する方法である。接続後は、樹脂20乃至樹
脂21で封止し半導体装置9とする。
This method is an automatic bonding method using a tape carrier method. That is, to explain based on FIG. 15, after positioning the carrier film substrate 16 and the semiconductor element 4, the inner lead part 17 of the carrier film substrate 16 and the connecting part 5 of the semiconductor element 4 are connected by thermocompression bonding. This is the way to do it. After the connection, the semiconductor device 9 is sealed with resins 20 and 21.

■CCB (Controlled Co11apse
 Bonding )法(例えば、特公昭42−209
6号、特開昭60−57944号公報) 第16図はCCD法によって接続され封止された半導体
装置の代表例を示す、この方法を第16図に基づき説明
する。なお1本方法はフリップチップポンディング法と
も言われている。
■CCB (Controlled Co11apse
Bonding) law (for example, Special Publication Act 1977
(No. 6, Japanese Unexamined Patent Publication No. 60-57944) FIG. 16 shows a typical example of a semiconductor device connected and sealed by the CCD method. This method will be explained based on FIG. 16. Note that this method is also called the flip chip bonding method.

半導体素子4の接続部5に予め半田バンプ31を設け、
半田バンプ31が設けられた半導体素子4を1回路基板
32上に位置決めして搭載する。
Solder bumps 31 are provided in advance on the connection portion 5 of the semiconductor element 4,
A semiconductor element 4 provided with solder bumps 31 is positioned and mounted on one circuit board 32.

その後、半田を加熱溶解することにより回路基板32と
に半導体素子4とを接続させ、フラックス洗浄後薄氷し
て半導体装置9を作る。
Thereafter, the semiconductor element 4 is connected to the circuit board 32 by heating and melting the solder, and after washing with flux, thin ice is applied to form the semiconductor device 9.

■第17及び第18図に示す方法 すなわち、第1の半導体素子4の接続部5以外の部分に
ポリイミド等よりなる絶縁膜71を形成せしめ、接続部
5にはAu等よりなる金属材70を設け、次いで、金属
材70及び絶縁膜71の露出面73.72を平らにする
。一方、第2の半導体素子4′の接続部5′以外の部分
にポリイミド等よりなる絶縁膜71’を形成せしめ、接
続部5′にはAu等よりなる金属材70′を設け、次い
で、金属材70′及び絶縁膜71’の露出面73°、7
2°を平らにする。
■The method shown in FIGS. 17 and 18, that is, an insulating film 71 made of polyimide or the like is formed on a portion of the first semiconductor element 4 other than the connection portion 5, and a metal material 70 made of Au or the like is formed on the connection portion 5. Then, the exposed surfaces 73 and 72 of the metal material 70 and the insulating film 71 are flattened. On the other hand, an insulating film 71' made of polyimide or the like is formed on a portion of the second semiconductor element 4' other than the connection part 5', a metal material 70' made of Au or the like is provided on the connection part 5', and then a metal material 70' made of Au or the like is provided on the connection part 5'. Exposed surfaces 73° and 7 of the material 70' and the insulating film 71'
Flatten 2°.

しかる後、第18図に示すように第1の半導体素子4と
第2の半導体素子4°とを位置決めし、位置決め後、熱
圧着することにより第1の半導体素子4の接続部5と第
2の半導体素子4′の接続部5″を金属材70 、70
 ’を介して接続する。
Thereafter, as shown in FIG. 18, the first semiconductor element 4 and the second semiconductor element 4 degrees are positioned, and after positioning, the connection part 5 of the first semiconductor element 4 and the second The connecting portion 5'' of the semiconductor element 4' is connected to metal materials 70, 70.
Connect via '.

■第19図に示す方法 すなわち、第1の回路基材75と第2の回路基材75′
の間に、絶縁物質77中に導電粒子79を分散させた異
方性導電膜78を介在させ、第1の回路基材75と第2
の回路基材75′を位置決めしたのち、加圧もしくは、
加圧・加熱し、第1の回路基材75の接続部76と第2
の回路基材75′の接続部76°を接続する方法である
■The method shown in FIG. 19, that is, the first circuit substrate 75 and the second circuit substrate 75'
An anisotropic conductive film 78 in which conductive particles 79 are dispersed in an insulating material 77 is interposed between the first circuit base material 75 and the second circuit base material 75.
After positioning the circuit board 75', pressurize or
By applying pressure and heating, the connection portion 76 of the first circuit substrate 75 and the second
This is a method of connecting the connecting portion 76° of the circuit board 75'.

■第20図に示す方法 すなわち、第1の回路基材75と第2の回路基材75°
の間に、絶縁物質81中に一定方向にFe、Cu等の金
属線82を配したエラスチックコネクター83を介在さ
せ、第1の回路基材75と第2の回路基材75゛を位置
決めしたのち、加圧し、第1の回路基材75の接続部7
6と第2の回路基材75′の接続部76′を接続する方
法である。
■The method shown in FIG. 20, that is, the first circuit substrate 75 and the second circuit substrate 75°
After positioning the first circuit base material 75 and the second circuit base material 75 by interposing an elastic connector 83 in which a metal wire 82 of Fe, Cu, etc. is arranged in a certain direction in an insulating material 81, , and pressurize the connecting portion 7 of the first circuit board 75.
6 and the connecting portion 76' of the second circuit board 75'.

[発明が解決しようとする問題点] ところで上記した従来のポンディング法には次のような
問題点がある。
[Problems to be Solved by the Invention] The conventional bonding method described above has the following problems.

■ワイヤポンディング法 ■半導体素子4の接続部5を半導体素子4の内部にくる
ように設計すると、極細金属線7は、その線径が極めて
小さいために、半導体素子4の外周縁部10あるいはリ
ードフレーム1の素子搭載部2の外周縁部11に接触し
易くなる。aim金属線7がこれら外周縁部10乃至1
1に接触すると短絡する。さらに、極細金属線7の長さ
を長くせざるを得す、その長さを長くすると、トランス
ファーモー・ルド成形時に極細金属線7が変形しやすく
なる。
■ Wire bonding method ■ If the connection part 5 of the semiconductor element 4 is designed to be inside the semiconductor element 4, the ultrafine metal wire 7 has an extremely small wire diameter, It becomes easier to contact the outer peripheral edge 11 of the element mounting portion 2 of the lead frame 1. The aim metal wire 7 connects these outer peripheral edges 10 to 1.
If it touches 1, it will short circuit. Furthermore, the length of the ultra-fine metal wire 7 has to be increased, and when the length is increased, the ultra-fine metal wire 7 becomes easily deformed during transfer molding.

従って、半導体素子4の接続部5は半導体素子4上の周
辺に配置する必要が生じ、回路設計上の制限を受けざる
を得なくなる。
Therefore, the connecting portion 5 of the semiconductor element 4 needs to be placed around the semiconductor element 4, and is inevitably subject to circuit design limitations.

■ワイヤポンディング法においては、隣接する極細金属
線7同士の接触等を避けるためには半導体素子4上の接
続部5のピッチ寸法(隣接する接続部の中心間の距離)
としである程度の間隔をとらざるを得ない、従って、半
導体素子4の大きさが決まれば必然的に接続部5の最大
数が決まる。
■In the wire bonding method, in order to avoid contact between adjacent ultrafine metal wires 7, the pitch dimension of the connecting parts 5 on the semiconductor element 4 (distance between the centers of adjacent connecting parts)
Therefore, once the size of the semiconductor element 4 is determined, the maximum number of the connecting portions 5 is necessarily determined.

しかるに、ワイヤポンディング法では、このピッチ寸法
が通常0.2mm程度と大きいので、接続部5の数は少
なくせざるを得なくなる。
However, in the wire bonding method, the pitch dimension is usually as large as about 0.2 mm, so the number of connecting portions 5 must be reduced.

■半導体素子4上の接続部5から測った極細金属線7の
高さhは通常0.2〜0.4mmであるが、0.2mm
以下にし薄型化することは比較的困難であるので薄型化
を図れない。
■The height h of the ultrafine metal wire 7 measured from the connection part 5 on the semiconductor element 4 is usually 0.2 to 0.4 mm, but it is 0.2 mm.
Since it is relatively difficult to make the device thinner than below, the device cannot be made thinner.

@ワイヤポンディング作業に時間がかかる。特に接続点
数が多くなるとポンディング時間が長くなり生産効率が
悪くなる。
@Wire bonding takes time. In particular, when the number of connection points increases, the bonding time increases and production efficiency deteriorates.

■何らかの要因でトランスファーモールド条件範囲を越
すと、極細金属線7が変形したり最悪の場合には切断し
たりする。
- If the transfer molding condition range is exceeded for some reason, the ultrafine metal wire 7 may be deformed or, in the worst case, may be cut.

また半導体素子4上の接続部5においては、極細金属線
7と合金化されないAMが露出しているためAn腐食が
生じ易くなり、信頼性の低下が生じる。
Further, in the connection portion 5 on the semiconductor element 4, AM that is not alloyed with the ultrafine metal wire 7 is exposed, so that An corrosion is likely to occur, resulting in a decrease in reliability.

■TAB法 ■半導体素子4の接続部5を半導体素子4の内側にくる
ように設計すると、キャリアフィルム基板16のインナ
ーリード部17の長さ文が長くなるため、インナーリー
ド部17が変形し易くなりインナーリード部を所望の接
続部5に接続できなかったり、インナーリード部17が
半導体素子4の接続部5以外の部分く接触したりする。
■TAB method■ If the connecting part 5 of the semiconductor element 4 is designed to be inside the semiconductor element 4, the length of the inner lead part 17 of the carrier film substrate 16 becomes longer, so that the inner lead part 17 is easily deformed. Otherwise, the inner lead portion may not be able to be connected to the desired connection portion 5, or the inner lead portion 17 may come into contact with a portion of the semiconductor element 4 other than the connection portion 5.

これを避けるためには半導体素子4の接続部5を半導体
素子4上の周辺に持ってくる必要が生じ、設計上の制限
を受ける。
In order to avoid this, it is necessary to bring the connecting portion 5 of the semiconductor element 4 to the periphery above the semiconductor element 4, which is subject to design limitations.

■TAB法においても、半導体素子4上の接続部のピッ
チ寸法は0.09〜0.15mm程度とる必要があり、
従ってワイヤポンディング法の問題点■で述べたと同様
に、接続部数を増加させることはむずかしくなる。
■Even in the TAB method, the pitch dimension of the connection parts on the semiconductor element 4 must be approximately 0.09 to 0.15 mm.
Therefore, similar to the problem (2) of the wire bonding method, it is difficult to increase the number of connections.

■キャリアフィルム基板16のインナーリード部17が
半導体素子4の接続部5以外の部分に接触しないように
させるため所望のインナーリード部17の接続形状が要
求されコスト高となる。
(2) In order to prevent the inner lead portions 17 of the carrier film substrate 16 from coming into contact with portions other than the connection portions 5 of the semiconductor element 4, a desired connection shape of the inner lead portions 17 is required, which increases costs.

■半導体素子4の接続部5とインナーリード部17とを
接続するためには、半導体素子4の接続部5またはイン
ナーリード部17の接続部に金バンプをつけなければな
らずコスト高になる。
(2) In order to connect the connecting portion 5 of the semiconductor element 4 and the inner lead portion 17, gold bumps must be attached to the connecting portion 5 of the semiconductor element 4 or the connecting portion of the inner lead portion 17, which increases the cost.

■CCB法 ■半導体素子4の接続部5に半田バンプ31を形成させ
なければならないためコスト高になる。
■ CCB method ■ Solder bumps 31 must be formed on the connection portions 5 of the semiconductor element 4, which increases costs.

■バンプの半田量が多いと隣接する半田バンプとブリッ
ジ(隣接する半田バンプ同士が接触する現象)が生じ、
逆に少ないと半導体素子4の接続部5と基板32の接続
部33が接続しなくなり電気的導通がとれなくなる。す
なわち、接続の信頼性が低くなる。さらに、半田量、接
続の半田形状が接続の信頼性に影響する(ろう接技術研
究会技術資料、No、017− ’84、ろう核技術研
究会発行)という問題がある。
■If the amount of solder on a bump is large, bridges (a phenomenon in which adjacent solder bumps come into contact with each other) will occur between adjacent solder bumps.
On the other hand, if the amount is too small, the connecting portion 5 of the semiconductor element 4 and the connecting portion 33 of the substrate 32 will not be connected and electrical continuity will not be established. In other words, the reliability of the connection becomes low. Furthermore, there is a problem in that the amount of solder and the solder shape of the connection affect the reliability of the connection (Technical Data of the Brazing Technology Research Group, No. 017-'84, Published by the Brazing Technology Research Group).

このように、半田バンプの量の多少が接続の信頼性に影
響するため半田バンプ31の量のコントロールが必要と
されている。
As described above, the amount of solder bumps 31 needs to be controlled because the amount of solder bumps affects the reliability of the connection.

■半田バンプ31が半導体素子4の内側に存在すると接
続が良好に行なわれたか否かの目視検査がむずかしくな
る。
(2) If the solder bumps 31 are present inside the semiconductor element 4, it becomes difficult to visually inspect whether or not the connection has been made well.

■半導体素子の放熱特性が悪い(参考資料;Elect
ronic Packaging Technolog
y 1987.1 (Vo I。
■Poor heat dissipation characteristics of semiconductor elements (reference material; Elect
ronic Packaging Technology
y 1987.1 (Vo I.

3、 No、1) P、88〜71  NIKKEI 
MICRODEVICES。
3, No. 1) P, 88-71 NIKKEI
MICRO DEVICES.

198B−5月、 P、97〜10B)ため、放熱特性
を良好たらしめるための多大な工夫が必要とされる。
198B-May, P. 97-10B), therefore, great efforts are required to improve heat dissipation characteristics.

■第17図及び第18図に示す技術 ■絶縁膜71の露出面72と金属材7oの露出面73、
さらに絶縁膜71’の露出面72′と金属材70”の露
出面73゛を平らにしなければならず、そのための工数
が増し、コスト高になる。
■Technique shown in FIGS. 17 and 18■Exposed surface 72 of insulating film 71 and exposed surface 73 of metal material 7o,
Furthermore, the exposed surface 72' of the insulating film 71' and the exposed surface 73' of the metal material 70'' must be made flat, which increases the number of steps and costs.

■絶縁膜71の露出面72と金属材7oの露出面73あ
るいは絶縁膜71’の露出面72′と金属材70′の露
出面73′に凹凸があると金属材70と金属材70’と
が接続しなくなり、信頼性が低下する。
■If there are irregularities on the exposed surface 72 of the insulating film 71 and the exposed surface 73 of the metal material 7o, or on the exposed surface 72' of the insulating film 71' and the exposed surface 73' of the metal material 70', the metal material 70 and the metal material 70' may will no longer connect, reducing reliability.

■第19図に示す技術 ■位置決め後に、接続部76と接続部76°とを加圧し
て接続する際に、圧力が一定にはかかりにくいため、接
続状態にバラツキが生じ、その結果、接続部における接
触抵抗値のバラツキが大きくなる。そのため、接続の信
頼性が乏しくなる。
■Technology shown in Fig. 19■ After positioning, when applying pressure to connect the connecting portion 76 and the connecting portion 76°, it is difficult to apply constant pressure, so the connection state varies, and as a result, the connecting portion The variation in contact resistance value becomes large. Therefore, the reliability of the connection becomes poor.

また、多量の電流を流すと1発熱等あ現象が生じるので
、多量の電流を流したい場合には不向きである。
In addition, when a large amount of current is passed, phenomena such as heat generation occur, so it is not suitable when a large amount of current is to be passed.

■圧力が一定にかけられたとしても、異方性導電膜78
の導電粒子79の配列により抵抗値のバラツキが大きく
なる。そのため、接続の信頼性に乏しくなる。また、大
電流容量が要求される接続には不向きである。
■Even if a constant pressure is applied, the anisotropic conductive film 78
Due to the arrangement of the conductive particles 79, variations in the resistance value become large. Therefore, the reliability of the connection becomes poor. Furthermore, it is not suitable for connections requiring large current capacity.

■隣接する接続部のピッチ(接続部に隣接する接続部中
心間の距離)を狭くすると隣接する接続部の間の抵抗値
が小さくなることから高密度な接続には不向きである。
(2) If the pitch between adjacent connecting parts (the distance between the centers of adjacent connecting parts) is narrowed, the resistance value between adjacent connecting parts will decrease, which is not suitable for high-density connections.

■回路基材75 、75 ’の接続部76.76”の出
っ張りihlのバラツキにより抵抗値が変化するため、
hlバラツキ量を正確に押さえることが必要である。
■The resistance value changes due to variations in the protrusion ihl of the connection part 76.76" of the circuit substrates 75, 75',
It is necessary to accurately control the amount of hl variation.

■さらに異方導電膜を、半導体素子と回路基材の接続、
また、第1の半導体素子と第2の半導体素子との接続に
使用した場合、上記■〜■の欠点の他、半導体素子の接
続部にバンプを設けなければならなくなり、コスト高に
なるという欠点が生じる。
■Additionally, anisotropic conductive films can be used to connect semiconductor elements and circuit substrates,
Furthermore, when used to connect the first semiconductor element and the second semiconductor element, in addition to the disadvantages mentioned above, bumps must be provided at the connection part of the semiconductor element, which increases the cost. occurs.

■第20図に示す技術 ■加圧が必要であり、加圧治具が必要となる。■Technology shown in Figure 20 ■Pressure is required, and a pressure jig is required.

■エラスチックコネクタ83の金属線82と第1の回路
基材75の接続部76門だ、第2の回路基材75′の接
続部76′との接触抵抗は加圧力及び表面状態により変
化するため接続の信頼性は乏しい。
■The contact resistance between the metal wire 82 of the elastic connector 83 and the connection portion 76 of the first circuit substrate 75, which is the connection portion 76 of the second circuit substrate 75', changes depending on the pressing force and surface condition. Connection reliability is poor.

■エラスチックコネクタ83の金属線82は剛体である
ため、加圧力が大であるとエラスチックコネクタ83.
第1の回路基材75、第2の回路基材75′の表面が破
損する可能性が大きい、また、加圧力が小であると、接
続の信頼性が乏しくなる。
■Since the metal wire 82 of the elastic connector 83 is a rigid body, if the pressing force is large, the elastic connector 83.
If the surfaces of the first circuit substrate 75 and the second circuit substrate 75' are likely to be damaged, and if the pressing force is small, the reliability of the connection will be poor.

■さらに1回路基材75.75°の接続部76 、76
 ’の出っ張り量h2、またエラスチックコネクタ83
の金属線82の出っ張り量h3とそのバラツキが抵抗値
変化及び破損に影響を及ぼすので、バラツキを少なくす
る工夫が必要とされる。
■Additionally 1 circuit base 75.75° connection part 76, 76
'Protrusion amount h2, and elastic connector 83
Since the protrusion amount h3 of the metal wire 82 and its dispersion affect the change in resistance value and damage, it is necessary to take measures to reduce the dispersion.

■さらに、エラスチックコネクターを半導体素子と回路
基材の接続、また、第1の半導体素子と第2の半導体素
子との接続に使用した場合、■〜■と同様な欠点を生ず
る。
(2) Further, when an elastic connector is used to connect a semiconductor element and a circuit substrate, or to connect a first semiconductor element and a second semiconductor element, the same drawbacks as in (1) to (2) occur.

本発明は、以上のような問題点をことごとく解決し、高
密度で高信頼性でしかも、低コストの新電気的接続部材
及びそれを用いた電気回路部材を提案するものであり、
従来の接続方式を置き代え得ることはもちろん、高密度
多点接続が得られ、熱等諸特性を向上させ得るものであ
る。
The present invention solves all of the above-mentioned problems and proposes a new high-density, high-reliability, and low-cost electrical connection member and an electric circuit member using the same.
Not only can it replace conventional connection methods, it can also provide high-density multi-point connections and improve various properties such as heat.

(以下余白) [問題点を解決するための手段] 本発明は、接続部を有する第1の電気回路部品と、接続
部を有する第2の電気回路部品とを電気的に接続するた
めの電気的接続部材において。
(The following is a blank space) [Means for solving the problem] The present invention provides an electric circuit for electrically connecting a first electric circuit component having a connecting portion and a second electric circuit component having a connecting portion. In the target connecting member.

電気的接続部材は、金属または合金よりなる複数の金属
部材を、該金属部材の一端を第1の電気部品側に露出さ
せて、一方、該金属部材の他端を該第2の電気回路部品
側に露出させて、それぞれの金属部材同士が電気的に絶
縁されるように絶縁体中に埋設して構成されており、か
つ、該絶縁体には無機材料よりなる粉体又は繊維の一方
又は両方が分散していることを特徴とする電気的接続部
材に第1の要旨を有する。
The electrical connection member includes a plurality of metal members made of metal or an alloy, one end of which is exposed to the first electrical component side, and the other end of the metal member is connected to the second electrical circuit component. The metal members are exposed to the side and buried in an insulator so as to be electrically insulated from each other, and the insulator contains either powder or fiber made of an inorganic material, or The first gist lies in an electrical connection member characterized in that both are dispersed.

また、本発明は、接続部を有する第1の電気回路部品と
、接続部を有する第2の電気回路部品とを、両電気回路
部品を電気的に接続するための電気的接続部材を両電気
回路部品の間に介在させて、両電気回路部品の接続部に
おいて接続して構成される電気回路部材において、 電気的接続部材は、金属または合金よりなる複数の金属
部材を、該金属部材の一端を第1の電気部品側に露出さ
せて、一方、該金属部材の他端を該第2の電気回路部品
側に露出させて、それぞれの金属部材同士が電気的に絶
縁されるように絶縁体中に埋設して構成されており、か
つ、該絶縁体には無機材料よりなる粉体又は繊維の一方
又は両方が分散しており、 第1の電気回路部品の接続部と第1の電気回路部品側に
露出した金属部材の一端とを接続し、また、第2の電気
回路部品の接続部と第2の電気回路部品側に露出した金
属部材の一端とを接続したことを特徴とする電気回路部
材に第2の要旨を有する。
Further, the present invention provides an electrical connection member for electrically connecting a first electrical circuit component having a connecting portion and a second electrical circuit component having a connecting portion. In an electrical circuit member that is interposed between circuit components and connected at a connecting portion of both electrical circuit components, the electrical connection member connects a plurality of metal members made of metal or an alloy to one end of the metal member. is exposed to the first electric component side, and the other end of the metal member is exposed to the second electric circuit component side, so that the respective metal members are electrically insulated from each other. and one or both of powder and fiber made of an inorganic material is dispersed in the insulator, and the connection part of the first electric circuit component and the first electric circuit An electrical device characterized in that one end of the metal member exposed to the component side is connected, and a connecting portion of the second electric circuit component is connected to one end of the metal member exposed to the second electric circuit component side. The circuit member has a second gist.

本発明における電気回路部品としては1例えば、半導体
素子、樹脂回路基板、セラミック基板、金属基板等の回
路基板(以下単に回路基板ということがある)、リード
フレーム等があげられる。すなわち、第1の電気回路部
品としてこれらの中のいずれかの部品を用い、第2の電
気回路部品としてこれらの中のいずれかの部品を用いれ
ばよい。
Examples of electric circuit components in the present invention include semiconductor elements, circuit boards such as resin circuit boards, ceramic boards, and metal boards (hereinafter sometimes simply referred to as circuit boards), lead frames, and the like. That is, any one of these components may be used as the first electrical circuit component, and any one of these components may be used as the second electrical circuit component.

電気回路部品として接続部を有する部品が本発明の対象
となる。接続部の数は問わないが、接続部の数が多けれ
ば多いほど本発明の効果が顕著となる。
The object of the present invention is a component having a connection part as an electric circuit component. Although the number of connection parts does not matter, the greater the number of connection parts, the more remarkable the effects of the present invention will be.

また、接続部の存在位置も問わないが、電気回路部品の
内部に存在するほど本発明の効果が顕著となる。
Further, although the location of the connection portion does not matter, the effect of the present invention becomes more pronounced as the connection portion is located inside the electric circuit component.

本発明に係る電気的接続部材は、絶縁体中に複数の金属
部材を埋設して構成されている。金属部材同士はそれぞ
れ絶縁体により絶縁されており。
The electrical connection member according to the present invention is constructed by embedding a plurality of metal members in an insulator. Each metal member is insulated from each other by an insulator.

また、金属部材の一端は第1の電気回路部品側に露出し
ており、他の一端は第2の電気回路部品側に露出してい
る。さらに、該絶縁体には無機材料よりなる粉体又は繊
維の一方又は両方が分散している。
Moreover, one end of the metal member is exposed to the first electric circuit component side, and the other end is exposed to the second electric circuit component side. Furthermore, one or both of powder and fibers made of an inorganic material are dispersed in the insulator.

ここで、金属部材の材質としては、金が好ましいが、全
以外の任意の金属あるいは合金を使用することもできる
0例えば、Cu、AJI、Sn。
Here, as the material of the metal member, gold is preferable, but any metal or alloy other than gold may also be used.For example, Cu, AJI, Sn.

Pb−3n等の金属あるいは合金があげられる。Examples include metals or alloys such as Pb-3n.

さらに、金属部材の断面は円形、四角形その他任意の形
状とすることができる。
Furthermore, the cross section of the metal member can be circular, square, or any other shape.

また、金属部材の太さは特に限定されない、電気回路部
品の接続部のピッチを考慮して1例えば20JLmφ以
上あるいは20ILmφ以下にしてもよい。
Further, the thickness of the metal member is not particularly limited, and may be set to 1, for example, 20 JLmφ or more or 20ILmφ or less, taking into consideration the pitch of the connecting portions of the electric circuit components.

なお、金属部材の露出部は絶縁体と同一面としてもよい
し、また、絶縁体の面から突出させてもよい、この突出
は片面のみでもよいし両面でもよい、さらに突出させた
場合はバンプ状にしてもよい。
Note that the exposed portion of the metal member may be on the same surface as the insulator, or it may be made to protrude from the surface of the insulator. It may be made into a shape.

また、金属部材の間隔は、電気回路部品の接続部同士の
間隔と同一間隔としてもよいし、それより狭い間隔とし
てもよい、狭い間隔とした場合には電気回路部品と電気
的接続部材との位置決めを要することなく、電気回路部
品と電気的接続部材とを接続することが可能となる。
Furthermore, the spacing between the metal members may be the same as the spacing between the connecting parts of the electrical circuit components, or may be narrower than that, and when the spacing is narrower, the spacing between the electrical circuit components and the electrical connecting members may be the same. It becomes possible to connect the electrical circuit component and the electrical connection member without requiring positioning.

また、金属部材は絶縁体中に垂直に配する必要はなく、
第1の電気回路部品側から第2の電気回路部品側に向か
って斜行していてもよい。
Also, metal members do not need to be placed vertically in the insulator;
It may run obliquely from the first electric circuit component side toward the second electric circuit component side.

さらに電気的接続部材は、1層あるいは2層以上の多層
からなるものでもよい。
Furthermore, the electrical connection member may be composed of one layer or multiple layers of two or more layers.

本発明においては、絶縁体には無機材料よりなる粉体又
は繊維の一方又は両方が分散している。
In the present invention, one or both of powder and fibers made of an inorganic material are dispersed in the insulator.

ここで、無機材料とは、金属材料、有機材料以外の材料
をいい、例えば、SiC,Bed。
Here, the inorganic material refers to materials other than metal materials and organic materials, such as SiC and Bed.

B4 C,TaC,TiB2 、CrB2.TiN。B4 C, TaC, TiB2, CrB2. TiN.

BP 、BN 、A見N、Si3N4  、SiO2等
のセラミック、ダイヤモンド、C,B、ガラス等のもの
があげられる。これらの無機材料よりなる粉体又はmr
aの1種又は2種以上を使用すればよい。また、粉体又
は繊維の一方のみを使用してもよいし、両方を使用して
もよい。
Examples include ceramics such as BP, BN, AmiN, Si3N4, and SiO2, diamond, C, B, and glass. Powder or mr made of these inorganic materials
One or more types of a may be used. Moreover, only one of powder or fiber may be used, or both may be used.

分散せしめる粉体及び繊維の大きさ、形状、また、絶縁
体中における分散位置、数量は、粉体又はm維のために
、絶縁体中に埋設されている金属部材同士が接触・短絡
したり、切断したりしない範囲内ならば任意である。た
だ、粉体及び繊維の大きさとしては、隣接する金属部材
間の距離よりも小さいことが好ましい、すなわち、金属
部材同士が、粉体及び繊維を介してでも接触しない状態
が好ましい、また、粉体、繊維は絶縁体の外部に露出し
てもよいし、露出しなくともよい、また。
The size and shape of the powder and fibers to be dispersed, as well as the position and quantity of the dispersed particles in the insulator, should be determined in such a way that metal members embedded in the insulator may come into contact or short circuit due to the powder or fibers. , is arbitrary as long as it does not cut. However, the size of the powder and fibers is preferably smaller than the distance between adjacent metal members, that is, it is preferable that the metal members do not come into contact with each other even through the powder and fibers. The fibers may or may not be exposed to the outside of the insulation.

粉体、繊維同士は接触してもよいし、接触していなくと
もよい。
The powder and fibers may or may not be in contact with each other.

電気的接続部材の絶縁体は絶縁性物質ならば特に限定さ
れない0例えば絶縁性の樹脂を用いればよい、さらに、
樹脂を用いる場合には樹脂の種類も闇わない、熱硬化性
樹脂、熱可塑性樹脂のいずれでもよい6例えば、ポリイ
ミド樹脂、ポリフェニレンサルファイド樹脂、ポリエー
テルサルフォン樹脂、ポリエーテルイミド樹脂、ポリサ
ルフォン樹脂、シリコーン樹脂、フッ素樹脂、ポリカー
ボネート樹脂、ポリジフェニールエーテル樹脂、ポリベ
ンジルイミダゾール樹脂、フェノール樹脂、尿素樹脂、
メラミン樹脂、アルキッド樹脂、エポキシ樹脂、ポリア
ミドイミド樹脂、ポリプロプレン樹脂、ポリ塩化ビニル
樹脂、ポリスチレン樹脂その他の樹脂を使用することが
できる。
The insulator of the electrical connection member is not particularly limited as long as it is an insulating material; for example, an insulating resin may be used;
When using a resin, the type of resin is not limited; either thermosetting resin or thermoplastic resin may be used6.For example, polyimide resin, polyphenylene sulfide resin, polyethersulfone resin, polyetherimide resin, polysulfone resin, Silicone resin, fluororesin, polycarbonate resin, polydiphenyl ether resin, polybenzylimidazole resin, phenolic resin, urea resin,
Melamine resins, alkyd resins, epoxy resins, polyamideimide resins, polypropylene resins, polyvinyl chloride resins, polystyrene resins and other resins can be used.

絶縁体の材料として上記樹脂を使用する場合。When using the above resin as an insulator material.

粉体又は繊維を絶縁体に分散させるには、樹脂中に粉体
又は繊維を添加し、樹脂を撹拌すればよい、もちろん、
かかる方法によることなく、他の任意の方法で絶縁体中
に粉体又は繊維を分散せしめてもよい。
To disperse the powder or fibers into the insulator, simply add the powder or fibers to the resin, stir the resin, and, of course,
Powder or fibers may be dispersed in the insulator by any other method other than this method.

なお、上記の樹脂の中から、熱伝導性のよい樹脂を使用
すれば、半導体素子が熱を持ってもその熱を樹脂を介し
て放熱することができるのでより好ましい、さらに、樹
脂として、回路基板と同じかあるいは同程度の熱膨張率
を有するものを選択すれば、熱膨張e熱収縮に基づく、
装置の信頼性の低下を一層防止することが可能となる。
Among the above resins, it is more preferable to use a resin with good thermal conductivity because even if the semiconductor element has heat, the heat can be dissipated through the resin. If you select a material that has the same or similar coefficient of thermal expansion as the substrate, it will be possible to
It becomes possible to further prevent a decrease in reliability of the device.

本発明に係る電気回路部材においては、上記した電気的
接続部材を用いて第1の電気回路部品と第2の電気回路
部品とを接続する。
In the electric circuit member according to the present invention, the above-described electric connection member is used to connect the first electric circuit component and the second electric circuit component.

接続方法としては、公知の任意の接続方法を用いればよ
い。機械的方法、例えば、電気回路部品と電気的接続部
材とを押圧して接続してもよい。
Any known connection method may be used as the connection method. The connection may be made mechanically, for example by pressing the electrical circuit component and the electrical connection member.

[作用] 本発明では、上記した電気的接続部材を使用して第1の
電気回路部品と第2の電気回路部品とを接続しているの
で、電気回路部品の接続部を内部に配置することも可能
となり、接続部の数を増加させることができ、ひいては
高密度化が可能となる。
[Operation] In the present invention, since the above-described electrical connection member is used to connect the first electrical circuit component and the second electrical circuit component, the connecting portion of the electrical circuit component can be placed inside. This also makes it possible to increase the number of connection parts, which in turn makes it possible to increase the density.

また、電気的接続部材は薄くすることが可能であり、こ
の面からも電気回路部材の薄型化が可能となる。
Further, the electrical connection member can be made thinner, and from this point of view as well, it is possible to make the electrical circuit member thinner.

さらに、電気的接続部材に使用する金属部材の量は少な
いため、たとえ、高価な金を金属部材として使用したと
してもコストが安いものとなる。
Furthermore, since the amount of metal members used for the electrical connection member is small, the cost is low even if expensive gold is used as the metal member.

本発明においては、電気的接続部材の絶縁体中に粉体又
は繊維が分散しているので、第1の電気回路部品から第
2の電気回路部品への熱伝導性、また、@2の電気回路
部品から第1の電気回路部品への熱伝導性が良くなる。
In the present invention, since the powder or fibers are dispersed in the insulator of the electrical connection member, the thermal conductivity from the first electrical circuit component to the second electrical circuit component and the electrical Heat conductivity from the circuit component to the first electric circuit component is improved.

つまり、電気的接続部材の熱伝導性が良好であり、仮に
、第1の電気回路部品として発熱量の大きな電気回路部
品を使用し、第2の電気回路部品として熱影響の少ない
電気回路部品を選択したとすると、第1の電気回路部品
から発熱した熱は、電気的接続部材を介して第2の電気
回路部品へといち早く伝導され、この熱は第2の電気回
路部品から放熱される。従って、放熱特性の良好な電気
回路部材を得ることが可能となる。
In other words, if the thermal conductivity of the electrical connection member is good, and if an electrical circuit component with a large amount of heat is used as the first electrical circuit component, and an electrical circuit component that is less affected by heat is used as the second electrical circuit component, If selected, the heat generated from the first electrical circuit component is quickly conducted to the second electrical circuit component via the electrical connection member, and this heat is radiated from the second electrical circuit component. Therefore, it is possible to obtain an electric circuit member with good heat dissipation characteristics.

また、電気的接続部材の絶縁体中に無機材料よりなる粉
体又は繊維を分散させると、電気的接続部材の絶縁体の
熱膨張係数が電気回路部品の熱膨張係数に近すき、熱が
加わった場合に生ずることのある絶縁体、金属部材の割
れ、あるいは、電気回路部品の特性の変化という、半導
体装置の信頼性を損なう現象を防止でき、信頼性の良好
な半導体装置が得られる。
Furthermore, when powder or fibers made of an inorganic material are dispersed in the insulator of the electrical connection member, the coefficient of thermal expansion of the insulator of the electrical connection member approaches the coefficient of thermal expansion of the electric circuit component, and heat is added to the insulator. It is possible to prevent phenomena that impair the reliability of a semiconductor device, such as cracks in insulators and metal members, or changes in characteristics of electric circuit components, which may occur when the semiconductor device is heated, and a highly reliable semiconductor device can be obtained.

なお、本発明は、第1の電気回路部品と第2の電気回路
部品との熱膨張係数の差が大きい場合に顕著な効果が得
られる。
Note that the present invention provides significant effects when the difference in coefficient of thermal expansion between the first electric circuit component and the second electric circuit component is large.

[実施例] (第1実施例) 本発明の第1実施例を第1図及び第2図に基づいて説明
する。
[Example] (First Example) A first example of the present invention will be described based on FIGS. 1 and 2.

本実施例では、電気的接続部材125は、金属又は合金
よりなる複数の金属部材107を、それぞれの金属部材
107同士を電気的に絶縁し、かつ、該金属部材107
の一端を第1の回路基板101側に露出させて、一方、
該金属部材107の他端を該第2の回路部基板104側
に露出させて、絶縁体111中に埋設されて構成されて
おり、かつ、絶縁体111には無機材料よりなる粉体又
は繊!I(図示せず)が分散している。そして、電気回
路部材は、接続部102を有する第1の電気回路部品で
ある回路基板101と、接続部105を有する第2の電
気回路部品である回路基板104とを、両回路基板10
1,104を電気的に接続するための上記電気的接続部
材125を両者の間に介在させて1両回路基板101 
In this embodiment, the electrical connection member 125 electrically insulates the plurality of metal members 107 made of metal or alloy from each other, and
One end of the is exposed to the first circuit board 101 side, and on the other hand,
The other end of the metal member 107 is exposed to the second circuit board 104 side and is embedded in an insulator 111, and the insulator 111 includes powder or fiber made of an inorganic material. ! I (not shown) are dispersed. Then, the electric circuit member connects the circuit board 101 which is the first electric circuit component having the connection part 102 and the circuit board 104 which is the second electric circuit part having the connection part 105 to both the circuit boards 10
1 and 104, with the electrical connection member 125 interposed between them.
.

104の接続部102,105において接続して構成さ
れている。
104 and connected at connecting portions 102 and 105.

以下に本実施例をより詳細に説明する。This example will be explained in more detail below.

まず、電気的接続部材125の一製造例を説明しつつ電
気的接続部材125を説明する。
First, the electrical connection member 125 will be explained while explaining one manufacturing example of the electrical connection member 125.

第2図に一製造例を示す。FIG. 2 shows one manufacturing example.

まず、第2図(a)に示すように、20ILmφの金等
の金属あるいは合金よりなる金属線121を、ピッチ4
0JLmとして棒122に巻き付け、巻き付は後、ポリ
イミド等の樹脂123中に上記金属線121を埋め込む
、埋め込み前に樹脂中に5i02 よりなる粉体を配合
し、撹拌して樹脂中に粉体を分散させる。埋め込み後上
記樹脂123を硬化させる。硬化した樹脂123は絶縁
体となる。その後1点線124の位置でスライス切断し
、電気的接続部材125を作成する。このようにして作
成された電気的接続部材125を第2図(b)、(C)
に示す。
First, as shown in FIG. 2(a), metal wires 121 made of metal or alloy such as gold and having a diameter of 20 ILmφ are connected at a pitch of 4.
After wrapping, the metal wire 121 is embedded in a resin 123 such as polyimide. Before embedding, powder made of 5i02 is mixed in the resin and stirred to incorporate the powder into the resin. disperse. After embedding, the resin 123 is cured. The cured resin 123 becomes an insulator. Thereafter, it is sliced at the position of the one-dot line 124 to create an electrical connection member 125. The electrical connection member 125 created in this way is shown in FIGS. 2(b) and 2(C).
Shown below.

なお、本例では、樹脂を撹拌して粉体を分散せしめたが
、他の方法により粉体を分散せしめてもよい。
In this example, the powder was dispersed by stirring the resin, but the powder may be dispersed by other methods.

また、本例では、樹脂123中に5i02 よりなる粉
体な分散せしめたが、5iOz以外の無機材料よりなる
粉体もしくは繊維を分散せしめてもよい。
Further, in this example, powder made of 5i02 is dispersed in the resin 123, but powder or fiber made of an inorganic material other than 5iOz may be dispersed.

このように作成された電気的接続部材125において、
金属線121が金属部材107を構成し、樹脂123が
絶縁体111を構成する。
In the electrical connection member 125 created in this way,
The metal wire 121 constitutes the metal member 107, and the resin 123 constitutes the insulator 111.

この電気的接続部材125においては金属部材となる金
属線121同士は樹脂123により電気的に絶縁されて
いる。また、金属線121の一端は回路基板101側に
露出し、他端は回路基板104側に露出している。この
露出している部分はそれぞれ回路基板101.104と
の接続部108.109となる。
In this electrical connection member 125, metal wires 121 serving as metal members are electrically insulated from each other by resin 123. Further, one end of the metal wire 121 is exposed to the circuit board 101 side, and the other end is exposed to the circuit board 104 side. These exposed portions become connection portions 108 and 109 with circuit boards 101 and 104, respectively.

次に、第1の回路基板101、電気的接続部材125、
!@$2の回路基板104を用意する0本例で使用する
回路基板lot、104は、第1図に示すように、その
内部に多数の接続部102゜105を有している。
Next, the first circuit board 101, the electrical connection member 125,
! Preparing the circuit board 104 of @$2 The circuit board lot 104 used in this example has a large number of connection parts 102 and 105 inside thereof, as shown in FIG.

なお、第1の回路基板101の接続部102は、第2の
回路基板104の接続部105及び電気的接続部材12
5の接続部108,109に対応する位置に金属が露出
している。
Note that the connection portion 102 of the first circuit board 101 is connected to the connection portion 105 of the second circuit board 104 and the electrical connection member 12.
Metal is exposed at positions corresponding to the connection parts 108 and 109 of No. 5.

第1の回路基板lolの接続部102と、電気的接続部
材125の接続部108とを、又は、第2の回路基板1
04の接続部105と電気的接続部材125の接続部1
09が対応するように位置決めを行ない、位置決め後、
接続を行なう。
The connection part 102 of the first circuit board lol and the connection part 108 of the electrical connection member 125 or the second circuit board 1
Connection part 1 between the connection part 105 of 04 and the electrical connection member 125
Perform positioning so that 09 corresponds, and after positioning,
Make the connection.

以上のようにして作成した電気回路部材につき接続状態
を調べたところ、高い信頼性をもって接続されていた。
When the connection state of the electric circuit member produced as described above was examined, it was found that the connection was highly reliable.

8放熱特性も良好であった。8. The heat dissipation properties were also good.

(第2実施例) 第3図に第2実施例を示す。(Second example) FIG. 3 shows a second embodiment.

本例は、接続部52を有する第1の電気回路部品として
回路基板51を、第2の電気回路部品として内部に多数
の接続部5を有する半導体素子4を使用した。
In this example, a circuit board 51 is used as a first electric circuit component having a connection part 52, and a semiconductor element 4 having a large number of connection parts 5 therein is used as a second electric circuit component.

なお、絶縁体中には粉体又は繊維の一方又は両方が分散
している電気的接続部材125としては半導体素子4に
対応する寸法のものを使用した。
Note that the electrical connection member 125 in which one or both of powder and fibers is dispersed in the insulator has a size corresponding to the semiconductor element 4.

他の点は第1実施例と同様である。Other points are similar to the first embodiment.

本例においても接続部は高い信頼性を持って接続されて
いた。放熱特性も良好であった。
In this example as well, the connection section was connected with high reliability. The heat dissipation properties were also good.

(第3実施例) 第4図に第3実施例を示す。(Third example) FIG. 4 shows a third embodiment.

本例は、第1の電気回路部品が半導体素子4であり、第
2の電気回路部品が回路基板51である例である。
In this example, the first electric circuit component is the semiconductor element 4, and the second electric circuit component is the circuit board 51.

なお、接続後は回路基板51の上面にリードフレームl
を接続し、封止材63により封止した。
Note that after connection, a lead frame l is placed on the top surface of the circuit board 51.
were connected and sealed with a sealing material 63.

他の点は第1実施例と同様である。Other points are similar to the first embodiment.

本例においても接続部は高い信頼性を持って接続されて
いた。放熱特性も良好であった。
In this example as well, the connection section was connected with high reliability. The heat dissipation properties were also good.

(第4実施例) 第5図に第4実施例を示す。(Fourth example) FIG. 5 shows a fourth embodiment.

本例は、第1の電気回路部品が半導体素子4゜であり、
第2の電気回路部品が半導体素子4である例であり、本
例では、電気的接続部材として半導体素子4に対応した
寸法のものを使用し、リードフレームlを電気的接続部
材125の第1の半導体素子4′側に露出した金属部材
に接続している。
In this example, the first electric circuit component is a semiconductor element of 4°,
This is an example in which the second electric circuit component is the semiconductor element 4. In this example, an electrical connection member with dimensions corresponding to the semiconductor element 4 is used, and the lead frame l is connected to the first electrical connection member 125. It is connected to the metal member exposed on the semiconductor element 4' side.

他は第3実施例と同様である。The rest is the same as the third embodiment.

本例においても接続部は高い信頼性を持って接続されて
いた。放熱特性も良好であった。
In this example as well, the connection section was connected with high reliability. The heat dissipation properties were also good.

(第5実施例) 第6図に第5実施例を示す。(Fifth example) FIG. 6 shows a fifth embodiment.

第5実施例は、第1の電気回路部品、第2の電気回路部
品として、接続部以外の部分が絶縁膜103.106で
覆われている回路基板101 。
In the fifth embodiment, a circuit board 101 is used as a first electric circuit component and a second electric circuit component, and the portions other than the connecting portions are covered with insulating films 103 and 106.

104を使用している例である。This is an example in which 104 is used.

また、電気的接続部材としては第7図に示すものを使用
した。すなわち、第7図に示す、絶縁体中に粉体又は繊
維が分散している電気的接続部材125は、金属部材1
07の露出している部分が樹脂絶縁体111の面から突
出している。このような電気的接続部材125の作成は
、例えば、次の方法によればよい。
Further, as an electrical connection member, one shown in FIG. 7 was used. That is, the electrical connection member 125 shown in FIG. 7, in which powder or fibers are dispersed in the insulator,
The exposed portion of 07 protrudes from the surface of the resin insulator 111. Such electrical connection member 125 may be created, for example, by the following method.

まず、第1実施例で述べた方法により、第2図(b)、
(c)に示す電気的接続部材を用意する0次にこの電気
的接続部材の両面を、金属線121が、ポリイミド樹脂
123から1101L程度突出するまでエツチングすれ
ばよい。
First, by the method described in the first embodiment, as shown in FIG. 2(b),
After preparing the electrical connection member shown in (c), both surfaces of the electrical connection member may be etched until the metal wire 121 protrudes from the polyimide resin 123 by about 1101L.

なお、本実施例では金属線121の突出量を1101L
としたが、いかなる量でもよい。
Note that in this embodiment, the protrusion amount of the metal wire 121 is 1101L.
However, any amount may be used.

また、金属線121を突出させる方法としてはエツチン
グに限らず、他の化学的な方法又は機械的な方法を使用
してもよい。
Furthermore, the method for making the metal wire 121 protrude is not limited to etching, and other chemical or mechanical methods may be used.

他の点は第1実施例と同様である。Other points are similar to the first embodiment.

なお、突出部を、電気的接続部材125を金属線121
の位置に凹部を持った型に挟み込、み、金属線121の
突起126をつぶすことにより第8図に示すようなバン
プ150を形成してもよい。
Note that the protruding portion and the electrical connection member 125 are connected to the metal wire 121.
A bump 150 as shown in FIG. 8 may be formed by inserting the metal wire 121 into a mold having a recess at the position , and crushing the protrusion 126 of the metal wire 121 .

この場合金属線121は絶縁体111から脱落しにくく
なる。
In this case, the metal wire 121 becomes difficult to fall off from the insulator 111.

なお、本例でも、金属線121が金属部材107を構成
し、さらに、樹脂123が絶縁体111を構成する。
Note that in this example as well, the metal wire 121 constitutes the metal member 107, and furthermore, the resin 123 constitutes the insulator 111.

なお、バンプを作成するのには突起を熱で溶融させ、バ
ンプを作成してもよいし、他のl、%かなる方法でもよ
い。
Note that the bumps may be created by melting the protrusions with heat, or any other method may be used.

本例においても接続部は高い信頼性を持って接続されて
いた。放熱特性も良好であった・(第6実施例) 第9図に第6実施例を示す。
In this example as well, the connection section was connected with high reliability. The heat dissipation properties were also good. (Sixth Example) FIG. 9 shows the sixth example.

本例は、第1の電気回路部品として半導体素子4を使用
し、第2の電気部品としてリードフレームlを使用した
例である。
In this example, a semiconductor element 4 is used as the first electrical circuit component, and a lead frame I is used as the second electrical component.

他の点は第5実施例と同様である。Other points are similar to the fifth embodiment.

本例においても接続部は高い信頼性を持って接続されて
いた。放熱特性も良好であった・(第7実施例) 第10図に第7実施例を示す。
In this example as well, the connection section was connected with high reliability. The heat dissipation properties were also good. (Seventh Example) FIG. 10 shows the seventh example.

本例においては、電気的接続部材125は、第5実施例
に示した電気的接続部材と異なる。すなわち、本例の電
気的接続部材125におl、Xては、金属部材同士のピ
ッチが第5実施例で示したものよりも狭くなっている。
In this example, the electrical connection member 125 is different from the electrical connection member shown in the fifth embodiment. That is, in the electrical connection member 125 of this example, the pitch between the metal members is narrower than that shown in the fifth example.

すなわち、本例では、第1の回路基板接続部の間隔より
も狭い間隔に金属部材107同士のピッチを設定しであ
る。
That is, in this example, the pitch between the metal members 107 is set to be narrower than the interval between the first circuit board connecting portions.

つまり、第5実施例では、第1の回路基板101と第2
の回路基板104との接続位置に電気的接続部材125
の接続位置を配設したため。
That is, in the fifth embodiment, the first circuit board 101 and the second
An electrical connection member 125 is located at the connection position with the circuit board 104.
Because the connection position was arranged.

電気的接続部材125の位置決めが必要であったが、本
例では、第1の回路基板101と第2の回路基板104
との位置決めは必要であるが、電気的接続部材125と
の位置決めは不要となる。そのため、第1の回路基板1
01と第2の回路基板104の接続寸法(dll、pH
)と電気的接続部材の接続寸法(d12.PI3)を適
切な値に選ぶことにより位置決めなしで接続することも
可能である。
Although it was necessary to position the electrical connection member 125, in this example, the first circuit board 101 and the second circuit board 104
Although positioning with the electrical connection member 125 is necessary, positioning with the electrical connection member 125 is not necessary. Therefore, the first circuit board 1
01 and the second circuit board 104 (dll, pH
) and the connection dimensions (d12.PI3) of the electrical connection member to appropriate values, it is also possible to connect without positioning.

本例においても接続部は高い信頼性を持って接続されて
いた・放熱特性も良好であった。
In this example as well, the connections were connected with high reliability and the heat dissipation characteristics were also good.

(第8実施例) 第11図に第8実施例に使用する電気的接続部材を示す
(Eighth Example) FIG. 11 shows an electrical connection member used in the eighth example.

第11図(a)は電気的接続部材の斜視図、第11図(
b)は上記電気的接続部材の断面図である。
FIG. 11(a) is a perspective view of the electrical connection member, FIG.
b) is a sectional view of the electrical connection member.

かかる電気的接続部材の作成例を次に述べる。An example of making such an electrical connection member will be described below.

まず、第1実施例に示した製法で、絶縁体中に粉体又は
繊維が分散している電気的接続部材128.129,1
30を3枚用意する。
First, electrical connection members 128, 129, 1 in which powder or fibers are dispersed in an insulator are manufactured using the manufacturing method shown in the first embodiment.
Prepare three pieces of 30.

1枚目12Bの金属線121の位置はm行n列目で、m
a、nbだけ中心から変位している。2枚目129の金
属線121の位置はm行n列目でmac、nbcだけ中
心から変位している。3枚目130の金属線121の位
置はm行n列でmad、nbdだけ中心から変位してい
る。a。
The position of the metal wire 121 in the first sheet 12B is m row and n column, m
It is displaced from the center by a and nb. The position of the metal wire 121 in the second sheet 129 is in the mth row and nth column, and is displaced from the center by mac and nbc. The position of the metal wire 121 of the third sheet 130 is in m rows and n columns, and is displaced from the center by mad and nbd. a.

b、c、dの値は上下の金属121は導通するが左右に
は互いに電気的に導通しないような値をとる。3枚の電
気的接続部材を位置決めし、熱圧君等一方法を用い積層
し、電気的接続部材125を作成する。
The values of b, c, and d are such that the upper and lower metals 121 are electrically conductive, but the left and right sides are not electrically conductive with each other. The three electrical connection members are positioned and laminated using a method such as heat pressing to create the electrical connection member 125.

なお、本例においては、電気的接続部材の金属の位置を
m行n列というように規則をもった位置を選んだが、上
下の金属が導通し、左右には互いに電気的に導通しない
ようにすればランダムでもよい。
In addition, in this example, the positions of the metals of the electrical connection members were selected according to rules such as m rows and n columns, but the metals on the top and bottom were conductive, and the left and right sides were not electrically conductive with each other. It can be random if you do.

また、本例では3層積層する場合について述べたが、2
枚以上であれば何枚でもよい、また、熱圧着の方法を用
いて積層すると述べたが、圧着、接着等の方法を用いて
もよい、さらに、本例の電気的接続部材を加工して第7
図に示すように突起を設けてもよいし、第8図に示した
ようにバンプtSOを設けてもよい。
In addition, although this example describes the case where three layers are laminated, two
Any number of layers may be used as long as the electrical connection member of this example is laminated using a thermocompression bonding method. 7th
A protrusion may be provided as shown in the figure, or a bump tSO may be provided as shown in FIG.

本例においても接続部は高い信頼性を持って接続されて
いた・放熱特性も良好であった。
In this example as well, the connections were connected with high reliability and the heat dissipation characteristics were also good.

(第9実施例) 第12図に第9実施例に使用する電気的接続部材を示す
(Ninth Example) FIG. 12 shows an electrical connection member used in the ninth example.

第12図(a)は電気的接続部材の製造途中の断面図、
第12図(b)は上記電気的接続部材の斜視図、第12
図(C)は上記の断面図である。
FIG. 12(a) is a cross-sectional view of the electrical connection member during manufacture;
FIG. 12(b) is a perspective view of the electrical connection member,
Figure (C) is the above sectional view.

まず、金属線案内板131.132を用意する。そして
、金属線案内板131.132にあけられている所望の
穴133,134に金Em121を通し、所望の張力で
張る。その後、金属線案内板131,132間に樹脂1
23を流し込み、硬化させる。なお、樹脂123を流し
込む前に、予め樹脂123中に粉体又は繊維を添加し、
粉体又は繊維を樹脂中に分散せしめておく、シか□る後
、案内板を取りはずし、電気的接続部材125を作成す
る。また、本例の電気的接続部材を加工して、第7図に
示すように突起を設けてもよいし、第8図に示すように
バンプ150を設けてもよい。
First, metal wire guide plates 131 and 132 are prepared. Then, the gold Em 121 is passed through desired holes 133 and 134 made in the metal wire guide plates 131 and 132, and stretched to a desired tension. After that, resin 1 is placed between the metal wire guide plates 131 and 132.
Pour No. 23 and harden it. Note that before pouring the resin 123, powder or fibers are added to the resin 123 in advance,
After dispersing the powder or fibers in the resin and cutting, the guide plate is removed and the electrical connection member 125 is created. Further, the electrical connection member of this example may be processed to provide a protrusion as shown in FIG. 7, or a bump 150 as shown in FIG. 8.

本実施例の第1の回路部品及び第2の電気回路部品は、
それぞれ、半導体素子1回路基板、リードフレーム等の
回路基材のうちの1つである。
The first circuit component and the second electric circuit component of this example are:
Each of them is one of circuit base materials such as a semiconductor element, a circuit board, and a lead frame.

本例においても接続部は高い信頼性を持って接続されて
いた。放熱特性も良好であった・[発明の効果] 本発明は以上のように構成したので次の数々の効果が得
られる。
In this example as well, the connection section was connected with high reliability. The heat dissipation properties were also good. [Effects of the Invention] Since the present invention is constructed as described above, the following numerous effects can be obtained.

1、半導体素子と回路基板、リードフレーム等の回路基
材の接続に関し、信頼性の高い接続が得られる。従って
、従来用いられてきたワイヤポンディング方式、TAB
方式、CCB方式を置き変えることが可能となる。
1. Highly reliable connections between semiconductor elements and circuit substrates such as circuit boards and lead frames can be obtained. Therefore, the conventionally used wire bonding method, TAB
It becomes possible to replace the CCB method.

2、本発明によると電気回路部品の接続部をいかなる位
置(特に内部)にも配置することができることからワイ
ヤポンディング方式、TAB方式よりもさらに多点接続
が可能となり、多ビン数接続向きの方式となる。
2. According to the present invention, the connection parts of electric circuit components can be placed in any position (especially inside), which enables more multi-point connections than the wire bonding method or TAB method, and is suitable for connection with a large number of bins. This is the method.

さらに電気的接続部材の隣接金属間に絶縁物質が存在す
ることにより隣接金属間が電気的に導通しないことより
CCB方式よりもさらに多点接続が可能となる。
Further, since the presence of an insulating material between adjacent metals of the electrical connection member prevents electrical conduction between adjacent metals, more multi-point connections are possible than in the CCB method.

3、電気的接続部材において使用される金属部材の量は
従来に比べ微量であるため、仮に金属部材に金等の高価
な金属を使用しても従来より安価となる。
3. Since the amount of metal members used in the electrical connection member is small compared to the conventional one, even if expensive metal such as gold is used for the metal member, it will be cheaper than the conventional one.

4、高密度の半導体装置等が得られる。4. High-density semiconductor devices and the like can be obtained.

5、電気的接続部材の電気的絶縁物質として熱伝導性の
良い材料を選択することにより、電気回路部品からの放
熱性が良好となり、放熱性が良い半導体装置が得られる
5. By selecting a material with good thermal conductivity as the electrical insulating material of the electrical connection member, heat dissipation from the electric circuit components becomes good, and a semiconductor device with good heat dissipation can be obtained.

6、電気的接続部材の絶縁体中には無機材料よりなる粉
体又は繊維が分散しているので、第1の電気回路部品又
は第2の電気回路部品に熱が発生しても電気的接続部材
を介してその熱は外部に放熱される。従って、放熱性の
良好な電気回路部材を得ることができる。
6. Powder or fibers made of inorganic material are dispersed in the insulator of the electrical connection member, so even if heat is generated in the first electrical circuit component or the second electrical circuit component, electrical connection will not occur. The heat is radiated to the outside through the member. Therefore, an electric circuit member with good heat dissipation properties can be obtained.

7、熱が加わっても熱応力の発生が少なく、信頼性の高
い電気回路部材、ひいては、半導体装置が得られる。
7. Even when heat is applied, less thermal stress is generated, and a highly reliable electric circuit member and, by extension, a semiconductor device can be obtained.

もちろん、電気的接続部材の電気的絶縁物質として半導
体素子及び回路基材と同じかあるいは同程度の熱膨張率
を持つ材料を選択することにより信頼性の良い半導体装
置が得られる。
Of course, a highly reliable semiconductor device can be obtained by selecting a material having the same or similar coefficient of thermal expansion as the semiconductor element and the circuit substrate as the electrically insulating material of the electrical connection member.

なお、電気的接続部材の絶縁体中に他の物質を埋めこん
だり、積層することにより、放熱性の良い、低応力でし
かもシールド効率が得られる電気回路部材が得られる。
By embedding or laminating other substances in the insulator of the electrical connection member, an electrical circuit member with good heat dissipation, low stress, and shielding efficiency can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は第1実施例を示す断面図である。第1図(a)
は接続前の状態を示し、第2図(b)は接続後の状態を
示す、第2図は第1実施例に使用する電気的接続部材の
一製造方法例を説明するための図であり、第2図(a)
は断面図、第2図(b)は斜視図、第2図(c)は断面
図である。 第3図は第2実施例を示し、第3図(a)は斜視図、第
3図(b)は断面図である。第4図は第3実施例を示す
断面図である。第5図は第4実施例を示す断面図である
。第6図は第5実施例を示し、第6図(a)は接続前の
状態を示す断面図であり第6図(b)は接続後の状態を
示す断面図である。第7図及び第8図も第5実施例を示
し、第7図(a)及び第8図(a)は斜視図であり、第
7図(b)及び第8図(b)は断面図である。第9図は
第6実施例を示し、第9図(a)は接続前の状態を示す
斜視図であり、第9図(b)は接続後の状態を示す断面
図である。第10図は第7実施例を示す断面図であり、
第1O図(a)は接続前の状態を示し、第10図(b)
は接続後の状態を示す、第11図は第8実施例に係る電
気的接続部材を示し、第11図(&)は斜視図であり、
第11図(b)は断面図である。第12図は第9実施例
に係る電気的接続部材の一製造例を示し、第12図(a
)、(c)は断面図であり、第12図(b)は斜視図で
ある。第13図から第20図までは従来例を示し、第1
4図を除き断面図であり、第14図は平面透視図である
。 1・−v−ドフレーム、2・・リードフレームの素子搭
載部、3・・銀ペースト、4.4′・・半導体素子、5
.5°・拳半導体素子の接続部、6・・リードフレーム
の接続部、7・・極細金属線、8・・樹脂、9・・半導
体装置、lO・・半導体素子の外周縁部、11・・リー
ドフレームの素子搭載部の外周縁部、16・・キャリア
フィルム基板、17−・キャリアフィルム基板のインナ
ーリード部、20・・樹脂、21・・樹脂、31・・半
田バンプ、32・一基板、33・・基板の接続部、51
・・回路基板、52・・回路基板の接続部、54・・電
気的接続部材の接続前、55争・リードフレーム、63
・・封止材、70゜70’・・金属材、71.71’ 
 −・絶縁膜、72 、72 ’−・絶縁膜の露出面、
73.73′・・金属材の露出面、75,75° ・・
回路基材、76.76° ・・回路基材の接続部、77
・・異方性導電膜の絶縁物質、78・拳異方性導電膜、
7911・導電粒子、81・・エラスチックコネクタの
絶縁物質、82・・エラスチックコネクタの金属線、8
3・・エラスチックコネクタ、101・−回路基板、1
02・・接続部、103・・絶縁膜、106・・絶縁膜
、104・・回路基板、105・・接続部、107金属
部材、108−−接続部、109・・接続部、111・
・絶縁体、121・・金gil、122拳・棒、123
・拳樹脂、124・・点線、125・・電気的接続部材
、1260拳突起、128゜129.130・・電気的
接続部材、131゜132・・金属線案内板、150・
・バンプ。 第1図(a) 第1図(bン 第3図(a) 第3図(b) 第4図 第5図 54      1どづ 第6図(0) 第6図(b) 第7図(a) 第7図(b) 第9図(a) 第10図(0) 第10図(b) 第11図(a) 第11図(b) 第13図 第14図 第15図 第16図 3l−jlpO 第17図 第18図
FIG. 1 is a sectional view showing a first embodiment. Figure 1(a)
2 shows the state before connection, and FIG. 2(b) shows the state after connection. FIG. 2 is a diagram for explaining an example of a manufacturing method of the electrical connection member used in the first embodiment. , Figure 2(a)
2(b) is a perspective view, and FIG. 2(c) is a sectional view. FIG. 3 shows a second embodiment, with FIG. 3(a) being a perspective view and FIG. 3(b) being a sectional view. FIG. 4 is a sectional view showing the third embodiment. FIG. 5 is a sectional view showing the fourth embodiment. 6 shows a fifth embodiment, FIG. 6(a) is a sectional view showing the state before connection, and FIG. 6(b) is a sectional view showing the state after connection. FIGS. 7 and 8 also show the fifth embodiment, with FIGS. 7(a) and 8(a) being perspective views, and FIGS. 7(b) and 8(b) being sectional views. It is. 9 shows a sixth embodiment, FIG. 9(a) is a perspective view showing the state before connection, and FIG. 9(b) is a sectional view showing the state after connection. FIG. 10 is a sectional view showing the seventh embodiment,
Figure 10(a) shows the state before connection, and Figure 10(b)
11 shows the electrical connection member according to the eighth embodiment, and FIG. 11 (&) is a perspective view,
FIG. 11(b) is a sectional view. FIG. 12 shows an example of manufacturing an electrical connection member according to the ninth embodiment, and FIG.
) and (c) are cross-sectional views, and FIG. 12(b) is a perspective view. 13 to 20 show conventional examples, and the first
4 are cross-sectional views, and FIG. 14 is a plan perspective view. 1.-v-de frame, 2. Element mounting part of lead frame, 3. Silver paste, 4.4'... Semiconductor element, 5
.. 5°・Connection portion of fist semiconductor element, 6.Connection portion of lead frame, 7.. Ultrafine metal wire, 8.. Resin, 9.. Semiconductor device, lO.. Outer periphery of semiconductor element, 11.. Outer periphery of element mounting portion of lead frame, 16--carrier film substrate, 17--inner lead portion of carrier film substrate, 20--resin, 21--resin, 31--solder bump, 32--one substrate, 33... Connection part of the board, 51
...Circuit board, 52... Connection part of circuit board, 54... Before connection of electrical connection member, 55 - Lead frame, 63
...Sealing material, 70°70'...Metal material, 71.71'
--Insulating film, 72, 72'--Exposed surface of insulating film,
73.73'...Exposed surface of metal material, 75,75°...
Circuit base material, 76.76°...Connection part of circuit base material, 77
・・Insulating material of anisotropic conductive film, 78・Fist anisotropic conductive film,
7911. Conductive particles, 81.. Insulating material of elastic connector, 82.. Metal wire of elastic connector, 8
3.Elastic connector, 101.-Circuit board, 1
02... Connection part, 103... Insulating film, 106... Insulating film, 104... Circuit board, 105... Connection part, 107 Metal member, 108-- Connection part, 109... Connection part, 111...
・Insulator, 121...Golden gil, 122 Fist/stick, 123
- Fist resin, 124... Dotted line, 125... Electrical connecting member, 1260 Fist protrusion, 128° 129.130... Electrical connecting member, 131° 132... Metal wire guide plate, 150.
·bump. Figure 1 (a) Figure 1 (b) Figure 3 (a) Figure 3 (b) Figure 4 Figure 5 54 1 Dozu Figure 6 (0) Figure 6 (b) Figure 7 ( a) Figure 7 (b) Figure 9 (a) Figure 10 (0) Figure 10 (b) Figure 11 (a) Figure 11 (b) Figure 13 Figure 14 Figure 15 Figure 16 3l-jlpO Figure 17 Figure 18

Claims (1)

【特許請求の範囲】 1、接続部を有する第1の電気回路部品と、接続部を有
する第2の電気回路部品とを電気的に接続するための電
気的接続部材において、 電気的接続部材は、金属または合金よりなる複数の金属
部材を、該金属部材の一端を第1の電気部品側に露出さ
せて、一方、該金属部材の他端を該第2の電気回路部品
側に露出させて、それぞれの金属部材同士が電気的に絶
縁されるように絶縁体中に埋設して構成されており、か
つ、該絶縁体には無機材料よりなる粉体又は繊維の一方
又は両方が分散していることを特徴とする電気的接続部
材。 2、接続部を有する第1の電気回路部品と、接続部を有
する第2の電気回路部品とを、両電気回路部品を電気的
に接続するための電気的接続部材を両電気回路部品の間
に介在させて、両電気回路部品の接続部において接続し
て構成される電気回路部材において、 電気的接続部材は、金属または合金よりなる複数の金属
部材を、該金属部材の一端を第1の電気部品側に露出さ
せて、一方、該金属部材の他端を該第2の電気回路部品
側に露出させて、それぞれの金属部材同士が電気的に絶
縁されるように絶縁体中に埋設して構成されており、か
つ、該絶縁体には無機材料よりなる粉体又は繊維の一方
又は両方が分散しており、 第1の電気回路部品の接続部と第1の電気回路部品側に
露出した金属部材の一端とを接続し、また、第2の電気
回路部品の接続部と第2の電気回路部品側に露出した金
属部材の一端とを接続したことを特徴とする電気回路部
材。 3、第1の電気回路部品及び第2の電気回路部品は、そ
れぞれ半導体素子、回路基板やリードフレーム等の回路
基材のうちの1つである特許請求の範囲第1項記載の電
気的接続部材。 4、第1の電気回路部品及び第2の電気回路部品は、そ
れぞれ半導体素子、回路基板やリードフレーム等の回路
基材のうちの1つである特許請求の範囲第2項記載の電
気回路部材。
[Claims] 1. An electrical connection member for electrically connecting a first electrical circuit component having a connection portion and a second electrical circuit component having a connection portion, the electrical connection member comprising: , a plurality of metal members made of metal or alloy, one end of the metal member being exposed to the first electric component side, and the other end of the metal member being exposed to the second electric circuit component side. , each metal member is embedded in an insulator so as to be electrically insulated from each other, and one or both of powder and fiber made of an inorganic material is dispersed in the insulator. An electrical connection member characterized by: 2. A first electrical circuit component having a connection part and a second electrical circuit component having a connection part, and an electrical connection member for electrically connecting both the electrical circuit components between the two electrical circuit components. In an electric circuit member configured by connecting both electric circuit components at a connecting portion with a The metal member is buried in an insulator such that the metal member is exposed to the electrical component side, and the other end of the metal member is exposed to the second electric circuit component side, and the respective metal members are electrically insulated from each other. and one or both of powder and fiber made of an inorganic material is dispersed in the insulator, and is exposed at the connection part of the first electric circuit component and the first electric circuit component side. An electric circuit member characterized in that one end of the metal member is connected to the second electric circuit component, and a connecting portion of the second electric circuit component is connected to one end of the metal member exposed on the side of the second electric circuit component. 3. The electrical connection according to claim 1, wherein the first electric circuit component and the second electric circuit component are each one of a circuit base material such as a semiconductor element, a circuit board, or a lead frame. Element. 4. The electric circuit member according to claim 2, wherein the first electric circuit component and the second electric circuit component are each one of circuit base materials such as a semiconductor element, a circuit board, and a lead frame. .
JP6520987A 1987-03-04 1987-03-19 Electric connection member and electric circuit member employing the same Pending JPS63231890A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP6520987A JPS63231890A (en) 1987-03-19 1987-03-19 Electric connection member and electric circuit member employing the same
EP98102122A EP0854506A3 (en) 1987-03-04 1988-03-04 Electrically connecting member and electric circuit member
EP88103400A EP0284820A3 (en) 1987-03-04 1988-03-04 Electrically connecting member, and electric circuit member and electric circuit device with the connecting member
US08/597,383 US5967804A (en) 1987-03-04 1996-02-08 Circuit member and electric circuit device with the connecting member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6520987A JPS63231890A (en) 1987-03-19 1987-03-19 Electric connection member and electric circuit member employing the same

Publications (1)

Publication Number Publication Date
JPS63231890A true JPS63231890A (en) 1988-09-27

Family

ID=13280296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6520987A Pending JPS63231890A (en) 1987-03-04 1987-03-19 Electric connection member and electric circuit member employing the same

Country Status (1)

Country Link
JP (1) JPS63231890A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0419970A (en) * 1990-05-11 1992-01-23 Canon Inc Electric circuit member

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51125889A (en) * 1975-04-21 1976-11-02 Yamauchi Rubber Ind Co Ltd Multipolar connector
JPS5287663A (en) * 1975-10-23 1977-07-21 Chomerics Inc Separate current path connector

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51125889A (en) * 1975-04-21 1976-11-02 Yamauchi Rubber Ind Co Ltd Multipolar connector
JPS5287663A (en) * 1975-10-23 1977-07-21 Chomerics Inc Separate current path connector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0419970A (en) * 1990-05-11 1992-01-23 Canon Inc Electric circuit member

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