JPH0823127A - Magnetoresistance element and manufacture - Google Patents

Abstract

PURPOSE:To provide a magnetoresistance element that has a large resistance a small size and an element arranged nearest to and in parallel with a CONSTITUTION:A magnetoresistance element comprises an insulating layer 1 made of ceramic or glass, or compound of the glass and the ceramic, a conductor metallized layer 3 that is formed to connect between surfaces of the inside and outside or composing components at the inside or the outside of the insulating layer, a resistor of a predetermined shape formed on the surfaces of the inside or the outside of the insulating layer and a ferromagnetic thin film 2 of predetermined shape formed on the insulating material.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention utilizes a property that an electric resistance value changes when a magnetic field is applied, to detect magnetism and to detect the presence or movement of a magnetic body and its manufacture. It is about the method.

[0002]

2. Description of the Related Art In recent magnetoresistive effect elements, when it is necessary to increase the overall resistance value for the purpose of reducing power consumption, reducing the amount of heat generation, etc., an element shape operation is used. . Specifically, for example, thinning the ferromagnetic film thickness, narrowing the element width, increasing the number of wirings (increasing the element length), and the like are performed.

[0003]

However, in the conventional structure as described above, the following four items are limited, and therefore the total resistance value cannot be increased unless a resistor is added separately. there were.

1) Magnetic characteristic surface, for example, approximate expression H _s = t /
Limits on characteristics for reducing the element width with respect to a saturation magnetic field that can be expressed by w (H _s : saturation magnetic field, t: ferromagnetic film thickness, w: element width). 2) Limitation on thinning the ferromagnetic film that comes from obtaining physical properties.
3) Limitation on increasing the element formation area that comes from the size and shape of the element. 4) Limitations on narrowing element widths coming from the photolithography side.

In addition, when a high resistance is realized by adding a resistor separately, the element size becomes large and there is a thick obstacle near the element, so that the element cannot be closest to the magnetic body. Moreover, there is a problem that the structure cannot be installed in parallel.

In view of the above-mentioned problems, the present invention provides a magnetoresistive effect element having a high overall resistance value and a method of manufacturing the same, which is characterized in that it is small in size and that the element can be placed closest to and parallel to a magnetic body. It is provided.

[0007]

In order to achieve the above object, the magnetoresistive effect element of the present invention comprises an insulating layer made of a ceramic composition or glass or a glass / ceramic composition, and the inner or outer surface of the insulating layer. A resistor having a predetermined shape formed on the upper surface, a magnetoresistive thin film having a predetermined shape formed on the surface of the insulating layer, and connecting the front and back surfaces and each component inside or outside of the insulating layer. It is composed of the formed conductor metallization layer.

Further, the manufacturing method of the present invention comprises the steps of producing a green sheet made of ceramic or glass, ceramic raw material powder, a binder and a plasticizer, a step of forming a through hole in the green sheet, and the green sheet. A step of printing a conductive paste on and filling the through holes, a step of printing a resistor paste on the green sheet, a step of printing a glass paste for glass glaze on the green sheet, and a plurality of plates of the green sheet. The method is characterized by including a step of laminating, a step of firing the green sheet at a high temperature, and a step of forming a thin film of a ferromagnetic material on the glass glaze surface side of the obtained substrate.

[0009]

According to this structure, there are no obstacles on the device surface, the two-dimensional size (planar width) of the device is not increased, and the inside of the substrate in the thickness direction and the back surface of the device are separately provided. In order to adjust the overall resistance value by forming and connecting resistors,
It is possible to realize a magnetoresistive effect element having a high overall resistance value, while having a feature that the size is small and the element can be placed closest to and parallel to a magnetic body.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A magnetoresistive effect element according to a first embodiment of the present invention and a method of manufacturing the same will be described below with reference to the drawings. 1 is a top view of a magnetoresistive effect element according to a first embodiment of the present invention, FIG. 2 is a sectional view, and FIG. 3 is a bottom view.

1, 2 and 3, 1 is an insulating layer made of a ceramic composition or glass or a composition of glass and ceramics, 2 is a ferromagnetic thin film having a magnetoresistive effect, 3 is a conductor metallized layer, and 4 is Resistors 5 are current supply terminals (+), 6 are GND, and 7 and 8 are output terminals (intermediate terminals).

The magnetoresistive effect element according to the first embodiment of the present invention is an insulating layer 1 in which lead borosilicate glass is formed on a substrate containing glass and ceramics such as borosilicate glass and alumina as main components. A ferromagnetic thin film 2 containing at least one of nickel, iron, and cobalt as a main component and having a shape like a folded stripe made of permalloy, for example, is formed on the top surface of the substrate. A ruthenium oxide-based resistor 4 having a shape adapted to a desired resistance value is formed. For example, a conductor metallization layer 3 having a silver: palladium ratio of 80:20 is formed inside the insulating layer 1 and on the front and back surfaces by electrically connecting the ferromagnetic thin film 2 and the resistor 4 in series. The back electrode part serves as an input / output terminal. In terms of the element shape, the routing part has been eliminated to achieve downsizing. The element size is 4.5 × 3.5 (mm).

FIG. 4 is a top view of the magnetoresistive effect element according to the second embodiment of the present invention, FIG. 5 is a sectional view of the same, and FIG. 6 is a bottom view of the same.

The number of laminated layers of the conductor metallized layer 3 and the resistor 4 can be increased according to the desired resistance value.

The conductor metallized layer 3 may have a different composition ratio other than the above-mentioned silver: palladium ratio of 80:20, for example, silver or gold alone.

The connection point of the resistor 4 can be changed according to the desired resistance value. As an example, FIG. 7 shows an equivalent circuit in the case of the magnetoresistive effect element according to the first embodiment of the present invention.

Next, the manufacturing method of the second embodiment of the present invention will be explained. Borosilicate glass powder and alumina powder are blended in a weight ratio of 60:40 to form an inorganic component,
Polyvinyl butyral, polyvinyl alcohol, etc. as organic binder, dibutyl phthalate (DB
P), a mixed solution of toluene and ethanol as a solvent (60
(A ratio of 40) is mixed with 100 parts of an inorganic component, 5 parts of an organic binder, 10 parts of dibutyl phthalate (DBP), and 30 parts of toluene and ethanol, and wet pulverization is performed to form a slurry, followed by vacuum deaeration treatment. Bubbles were removed from the slurry and the viscosity was adjusted. The slurry was coated on a polyester support using a doctor blade and dried in an oven to prepare a green sheet having a thickness of 0.3 mm.
While removing the green sheet from the support, the through hole is formed by punching to form a through hole. For example, a conductor paste having a silver: palladium ratio of 80:20 is filled in the through hole, and a pattern is formed on the front and back surfaces. Two or more types of sheets were prepared by printing, drying, and then printing a paste of a ruthenium-based glaze resistance film in an amount such that the sheet resistance was 10 to 1 MΩ in accordance with a desired resistance value and drying. Further, stack the sheets for the desired resistance value, and
Bonded by pressure bonding at 100 kg / cm ² . A glass paste for glass glaze was printed on the surface side of the sheet in a predetermined pattern and dried. Next, after holding in / out at 850 to 900 ° C. for 1 hour, the product was taken out at a constant temperature. Next, the obtained substrate is placed in a vacuum vapor deposition machine, and after evacuation to a predetermined vacuum degree, permalloy is vapor-deposited to a thickness of 0.1 μm on the substrate surface, resist coating, exposure, development, etching, and resist stripping. After that, a magneto-sensitive pattern having a shape in which permalloy having a width of 10 μm was folded back to form a stripe was obtained. After dividing the substrate into a predetermined chip size, a lead was attached to the back surface electrode. For lead connection, soldering, wire bond,
You can make bumps, etc.

As an additional resistance value other than the elements, 10
It was possible to obtain ˜900 MΩ. With respect to the magnetoresistive effect element configured as described above, the magnetoresistance effect element of the conventional example was used in the same manner as in the magnetic sensitive section, and the overall resistance values of the elements were compared. Specifically, a comparison between FIGS. 4 to 6 and FIG. 8 described below is made.

A conventional magnetoresistive element for comparison will be described. FIG. 8 is a top view thereof. In FIG. 8, 11
Is an insulating substrate, 12 is a ferromagnetic thin film, 13 is a current supply terminal (+), 14 is GND, and 15 and 16 are output terminals (intermediate terminals).

Resistance is a measurement between 13-14. In the conventional example, the average was 1.1 KΩ, but in the product of the present invention, the average was 3.8 MΩ. Element size is 5.0 × 4.5 (m
m).

As is clear from the above, the magnetoresistive effect element of the present invention is 1) smaller in size than the conventional example.
2) The structure is such that the element surface can be placed closest to and parallel to the magnetic body. 3) It can be seen that the total resistance value is larger than that of the conventional example and the setting range thereof is wider.

As described above, according to this embodiment, the entire resistance value is not obtained only by operating the element shape, and the space and the resistor are not separately provided on the element surface, but only the conventional element is used. Since it has a configuration in which a resistor is separately connected to the substrate in the same shape as the element to obtain the desired high resistance, it is not possible to satisfy all the requirements for downsizing, flattening of the element surface and high resistance. In order to solve the problem, 1) space is not required for forming the adjusting resistor, so that the size can be reduced. 2) Since there is no obstacle on the element surface, the element can be placed closest to and parallel to the magnetic body. ) It was possible to realize a magnetoresistive effect element satisfying all three points that the resistance can be increased by adjusting the resistance.

[0023]

As described above, according to the present invention, the total resistance value is not obtained by manipulating the element shape, and a structure in which a space and a resistor are separately provided on the element surface is used. Since it has a configuration in which a resistor is separately connected to the substrate in the same shape as the element to obtain the desired high resistance, it is not possible to satisfy all the requirements for downsizing, flattening of the element surface and high resistance. In order to solve the problem, 1) the space for forming the adjusting resistor is not required, so that the size can be reduced. 2) Since there is no obstacle on the element surface, the element can be placed closest to and parallel to the magnetic body.
3) It is possible to realize a magnetoresistive effect element satisfying all three points that the resistance can be increased by adjusting the resistance.

[Brief description of drawings]

FIG. 1 is a top view of a magnetoresistive effect element according to a first embodiment of the present invention.

FIG. 2 is a sectional view of the magnetoresistive effect element.

FIG. 3 is a bottom view of the magnetoresistive effect element.

FIG. 4 is a top view of a magnetoresistive effect element according to a second embodiment of the present invention.

FIG. 5 is a sectional view of the magnetoresistive effect element.

FIG. 6 is a bottom view of the magnetoresistive effect element.

FIG. 7 is an equivalent circuit diagram of the magnetoresistive effect element according to the first embodiment of the present invention.

FIG. 8 is a top view of a conventional magnetoresistive effect element composed only of a ferromagnetic thin film.

[Explanation of symbols]

 1 Insulating Layer 2 Magnetoresistive Thin Film 3 Conductor Metallization Layer 4 Resistor

Claims (2)

[Claims] 1. An insulating layer made of a ceramic composition or glass or a composition of glass and ceramic, a resistor having a predetermined shape formed inside or on the outer surface of the insulating layer, and formed on the surface of the insulating layer. A magnetoresistive thin film having a predetermined shape, and a conductor metallized layer formed inside or outside the insulating layer so as to connect the front and back surfaces of the resistor, the magnetoresistive thin film, and the insulating layer. And a magnetoresistive effect element. 2. A step of producing a green sheet made of ceramic or glass, a ceramic raw material powder, a binder, and a plasticizer; a step of forming a through hole in the green sheet; and a step of printing a conductive paste on the green sheet. Filling the holes, printing a resistor paste on the green sheet, printing a glass paste for glass glaze on the green sheet, laminating a plurality of green sheets, the green sheet A step of baking the sheet and the printed and filled material by the steps listed above at a high temperature, and a step of forming a magnetoresistive thin film on the glass glaze surface of the substrate obtained by the baking to form a magnetic sensitive part of a predetermined shape, A method of manufacturing a magnetoresistive effect element, comprising: