JPH08186243A - Solid image pickup element - Google Patents
Solid image pickup elementInfo
- Publication number
- JPH08186243A JPH08186243A JP6339128A JP33912894A JPH08186243A JP H08186243 A JPH08186243 A JP H08186243A JP 6339128 A JP6339128 A JP 6339128A JP 33912894 A JP33912894 A JP 33912894A JP H08186243 A JPH08186243 A JP H08186243A
- Authority
- JP
- Japan
- Prior art keywords
- well
- ccd
- horizontal
- conductivity type
- vertical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007787 solid Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000005468 ion implantation Methods 0.000 claims description 11
- 238000001444 catalytic combustion detection Methods 0.000 claims 6
- 239000012535 impurity Substances 0.000 abstract description 20
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、固体撮像素子に関し、
特に電荷結合素子（以下「ＣＣＤ」という）に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image sensor,
In particular, it relates to a charge coupled device (hereinafter referred to as "CCD").
【０００２】[0002]
【従来の技術】図７は、電荷転送素子の概略図で、（１
２０）は感光部、（１２１）は垂直ＣＣＤ部、（１２
２）は水平ＣＣＤ部、（１２３）は電荷検出部を示すも
ので、これは固体撮像素子の平面図である。従来のもの
について、図４、図５及び図６で説明する。図４は従来
の垂直ＣＣＤと水平ＣＣＤのつなぎ部を表す平面図であ
り、図５は、図４のＹ２−Ｙ２´部の垂直断面図であ
り、図６は図４のＹ２−Ｙ２´部のポテンシャル図であ
る。2. Description of the Related Art FIG. 7 is a schematic view of a charge transfer device.
20) is a photosensitive section, (121) is a vertical CCD section, (12)
2) shows a horizontal CCD section, and (123) shows a charge detection section, which is a plan view of the solid-state imaging device. The conventional one will be described with reference to FIGS. 4, 5 and 6. 4 is a plan view showing a connecting portion of a conventional vertical CCD and a horizontal CCD, FIG. 5 is a vertical sectional view of a Y2-Y2 ′ portion of FIG. 4, and FIG. 6 is a Y2-Y2 ′ portion of FIG. It is a potential diagram of.
【０００３】従来、垂直ＣＣＤ部と水平ＣＣＤ部のつな
ぎめは、図４に示すようになっている。（１０２）はＮ
ウエルからなる垂直ＣＣＤ、（１０３）は水平ＣＣＤ
で、（１０４）は高濃度のＰ形半導体よりなるチャンネ
ルストッパー、（１０５）は第一ゲートポリシリよりな
る垂直ＣＣＤ最終ゲート電極、（１０６）は第二ゲート
ポリシリよりなる水平ＣＣＤ電極Ａ、（１０７）は第一
ゲートポリシリよりなる水平ＣＣＤ電極Ｂである。Conventionally, the connection between the vertical CCD section and the horizontal CCD section is as shown in FIG. (102) is N
Vertical CCD consisting of wells, (103) horizontal CCD
(104) is a channel stopper made of high-concentration P-type semiconductor, (105) is a vertical CCD final gate electrode made of the first gate polysilicon, (106) is a horizontal CCD electrode A made of the second gate polysilicon, and (107) is It is a horizontal CCD electrode B made of a first gate polysilicon.
【０００４】図５は、図４のＹ２−Ｙ２´の垂直断面図
でこの図に示すように、（１０８）はＮ形半導体基板、
（１０９）はドーズ量２．０Ｅ１２［ｃｍ−２］で、１
３００［℃］で５．０時間押し込むことによって作成さ
れた第一のＰウエルで、その不純物拡散領域ある。ま
た、（１１０）はドーズ量３．０Ｅ１１［ｃｍ−２］
で、１１００［℃］で７．０時間押し込むことによって
形成された第二のＰウエルで、その不純物拡散領域であ
る。（１０１´）はドーズ量２．５Ｅ１２［ｃｍ−２］
で、１１００［℃］で１．０時間押し込むことによって
形成された第三のＰウエルで、その不純物拡散領域であ
る。FIG. 5 is a vertical sectional view taken along line Y2-Y2 'of FIG. 4, in which (108) is an N-type semiconductor substrate.
(109) has a dose of 2.0E12 [cm −2 ] and is 1
This is a first P well formed by pressing at 300 [° C.] for 5.0 hours, and is the impurity diffusion region. Further, (110) is a dose amount of 3.0E11 [cm −2 ].
Then, the second P well is formed by being pressed at 1100 [° C.] for 7.0 hours, which is the impurity diffusion region. (101 ′) is the dose amount 2.5E12 [cm −2 ].
The third P-well formed by pressing at 1100 [° C.] for 1.0 hour is the impurity diffusion region.
【０００５】（１１１）はＮウエル（ＮＷＥＬＬ）で
４．０Ｅ１２［ｃｍ］程度のドーズ量によって作成され
ている。また、（１１３）はＮ−領域で、（１１３）に
は酸化膜（１１２）を介して作成された第一ゲートポリ
シリ電極をマスクにして、８Ｅ１２［ｃｍ］程度のボロ
ンが打ち込まれておりＮ−領域となっている。(111) is an N well (NWELL) and is formed with a dose amount of about 4.0E12 [cm]. Further, (113) is an N- region, and boron of about 8E12 [cm] is implanted in the (113) using the first gate polysilicon electrode formed via the oxide film (112) as a mask. It has become an area.
【０００６】図６は垂直ＣＣＤから水平ＣＣＤへの電荷
転送時の、図４のＹ２−Ｙ２´部のポテンシャル図であ
る。垂直最終電極には−１０［Ｖ］、水平ＣＣＤ電極
Ａ、Ｂは共に５［Ｖ］程度の電圧が印加されている。こ
のとき、垂直ＣＣＤ部分のｂ、ｃ領域は、ナローチャネ
ル効果により水平ＣＣＤ部分ｄより電位は浅くなり、ま
た、ｂ領域はＮ−となっているので、ｃ領域よりさらに
電位は浅くなっている。FIG. 6 is a potential diagram of Y2-Y2 'portion in FIG. 4 at the time of charge transfer from the vertical CCD to the horizontal CCD. A voltage of about 10 [V] is applied to the vertical final electrode, and a voltage of about 5 [V] is applied to both horizontal CCD electrodes A and B. At this time, the potentials of the b and c regions of the vertical CCD portion are shallower than those of the horizontal CCD portion d due to the narrow channel effect, and the potential of the b region is N-, so that the potential is further shallower than that of the c region. .
【０００７】よって、Ｙ２−Ｙ２´部のポテンシャルは
階段状の電位になるため、この電位差により電荷は垂直
ＣＣＤから水平ＣＣＤへと転送されていた。しかし、従
来の水平ＣＣＤとのつなぎ部分の垂直ＣＣＤの構造で
は、水平転送電極領域Ａ、Ｂ下の、図６のｂ、ｃ領域
に、電荷転送方向の電位に勾配が付かない部分があるた
め、この部分で電荷の転送速度が遅くなって電荷がつま
り、転送劣化が生じる。Therefore, since the potential of the Y2-Y2 'portion becomes a stepwise potential, the electric charge was transferred from the vertical CCD to the horizontal CCD due to this potential difference. However, in the structure of the vertical CCD at the connecting portion with the conventional horizontal CCD, there are portions in the regions b and c in FIG. 6 below the horizontal transfer electrode regions A and B where there is no gradient in the potential in the charge transfer direction. In this part, the charge transfer speed becomes slow and the charge is blocked, which causes transfer deterioration.
【０００８】このような転送劣化の改善を目的としたも
のに、特開昭６３−３１８１５６、特開平４−２６４７
７３がある。前者は垂直ＣＣＤを単一ゲートで構成し転
送方向へポテンシャル勾配がつくように不純物濃度を変
化させるもので、後者は複数の水平レジスタ間の転送効
率の向上を目的として転送方向にはチャネル幅を広くし
たものである。For the purpose of improving such transfer deterioration, Japanese Patent Laid-Open No. 63-318156 and Japanese Patent Laid-Open No. 4-2647 have been proposed.
There is 73. The former is to configure the vertical CCD with a single gate to change the impurity concentration so as to have a potential gradient in the transfer direction, and the latter is to increase the channel width in the transfer direction for the purpose of improving the transfer efficiency between a plurality of horizontal registers. It is a wide one.
【０００９】[0009]
【発明が解決しようとする課題】しかしながら、問題と
している垂直ＣＣＤと水平ＣＣＤのつなぎめでは、水平
ＣＣＤの転送電極が存在するため同一電極内でのポテン
シャル勾配を設けることはできず、また、垂直ＣＣＤ幅
を水平ＣＣＤ方向に広げる方法についても、図６のｂ、
ｃ領域のナロ・チャンネル効果による電位差が減少する
ため限界があり、設計上の自由度を制限している。従っ
て転送劣化を効率的に防止することはできず、低照度時
に画面に黒い縦線が見える等の不良モードの原因となっ
ていた。However, in the connection between the vertical CCD and the horizontal CCD in question, since the transfer electrode of the horizontal CCD exists, it is not possible to provide a potential gradient within the same electrode, and the vertical CCD cannot be provided. As for the method of expanding the CCD width in the horizontal CCD direction,
There is a limit because the potential difference due to the narrow channel effect in the c region is reduced, which limits the degree of freedom in design. Therefore, transfer deterioration cannot be efficiently prevented, which causes a defective mode such as black vertical lines appearing on the screen when the illuminance is low.
【００１０】[0010]
【課題を解決するための手段】本発明は、第一導電形基
板に第一の第二導電形ウエルが形成され、前記第二導電
形ウエル内に第一導電形領域からなる垂直ＣＣＤと水平
ＣＣＤが形成され、垂直ＣＣＤ下の第二導電形ウエルは
低濃度で基板方向に深く形成された層を作成するための
第一のイオン注入と、高濃度で基板方向に浅く形成され
た層を形成するための第二のイオン注入とで作成され、
また水平ＣＣＤ下の第二導電形ウエルは、低濃度で基板
方向に深く形成するための前記第一のイオン注入と、よ
り低濃度でより基板方向に深く形成された層を作成する
ための第三のイオン注入とで作成され、水平ＣＣＤとの
つなぎ部分の垂直ＣＣＤ下の前記第二のイオン注入領域
が電荷転送方向に連続的な電位勾配を付けていることを
特徴とする固体撮像素子である。また本発明は、電荷転
送方向に連続的な電位勾配を付けているところが、水平
ＣＣＤ方向に放射状にイオン注入されない領域が形成さ
れていることを特徴とする固体撮像素子である。According to the present invention, a first second conductivity type well is formed on a first conductivity type substrate, and a vertical CCD having a first conductivity type region and a horizontal direction is formed in the second conductivity type well. The CCD is formed, and the second conductivity type well under the vertical CCD has the first ion implantation for forming a layer having a low concentration and being deeply formed in the substrate direction, and a layer having a high concentration and being shallowly formed in the substrate direction. Created with a second ion implantation to form,
Further, the second conductivity type well under the horizontal CCD has the first ion implantation for forming a low concentration and deep in the substrate direction, and the first ion implantation for forming a lower concentration and a deeper layer in the substrate direction. In the solid-state image pickup device, the second ion-implanted region under the vertical CCD at the connecting portion with the horizontal CCD has a continuous potential gradient in the charge transfer direction. is there. Further, the present invention is the solid-state image pickup device, characterized in that a continuous potential gradient is provided in the charge transfer direction, but a region where radial ion implantation is not formed is formed in the horizontal CCD direction.
【００１１】[0011]
【作用】本発明においては、水平ＣＣＤとのつなぎめの
垂直ＣＣＤ下の、垂直ＣＣＤ容量を確保し、シャッター
動作時に基板印加電圧によって垂直ＣＣＤを転送中の信
号電荷が基板側に流出することを防ぐためのＰウエル
が、電荷転送方向に放射状に設けて作られるので、電荷
の転送方向に電位勾配がつき、電荷転送速度を速くする
ことができ、また低照度時に画面に黒い縦線が見えると
いうような不良モードも生じないものである。According to the present invention, the vertical CCD capacity under the vertical CCD connected to the horizontal CCD is secured, and the signal charge during transfer of the vertical CCD is discharged to the substrate side by the voltage applied to the substrate during the shutter operation. Since the P well for preventing is formed radially in the charge transfer direction, there is a potential gradient in the charge transfer direction, the charge transfer speed can be increased, and black vertical lines are visible on the screen when the illuminance is low. Such a defective mode does not occur.
【００１２】[0012]
【実施例】本発明の実施例について図面を参照して説明
する。図１は本発明の実施例の水平ＣＣＤとのつなぎめ
の垂直ＣＣＤ部の平面図であり、図２は図１のＹ１−Ｙ
１´部の垂直断面図である。図１に示すように、水平Ｃ
ＣＤとのつなぎめの垂直ＣＣＤ部は、その平面図では、
第一導電形基板に、第二のＰウエルのイオン注入領域
（１）、垂直ＣＣＤ（２）、水平ＣＣＤ（３）、チャン
ネルストッパー（４）、垂直ＣＣＤ最終転送電極
（５）、水平ＣＣＤ転送電極Ａ（６）、水平ＣＣＤ転送
電極Ｂ（７）が形成されているものである。Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a plan view of a vertical CCD section connected to a horizontal CCD according to an embodiment of the present invention, and FIG. 2 is Y1-Y of FIG.
It is a vertical cross-sectional view of 1'section. As shown in FIG. 1, horizontal C
In the plan view, the vertical CCD section connected to the CD is
Ion implantation area (1) of the second P-well, vertical CCD (2), horizontal CCD (3), channel stopper (4), vertical CCD final transfer electrode (5), horizontal CCD transfer on the first conductivity type substrate. An electrode A (6) and a horizontal CCD transfer electrode B (7) are formed.
【００１３】図１のＹ１−Ｙ１´部の断面図である図２
に示すように、第一導電形基板であるＮ形半導体基板
（８）に、第一の第二導電形ウエルである第一のＰウエ
ルの不純物拡散領域（９）、第二導電形ウエルである第
二のＰウエルの不純物拡散領域（１０）がある。第二導
電形ウエルてある第二のＰウエルの不純物拡散領域（１
０）内に第一導電形領域からなる垂直ＣＣＤと水平ＣＣ
Ｄが形成されている。垂直ＣＣＤ下の第二導電形ウエル
である第二のＰウエルの不純物拡散領域（１０）には、
基板方向に深く形成された層である第三のＰウエルの不
純物拡散領域（１´）が形成されている。そして、Ｎウ
エル（１１）、酸化膜（１２）、垂直ＣＣＤ最終転送電
極（５）、水平ＣＣＤ転送電極Ａ（６）及び水平ＣＣＤ
転送電極Ｂ（７）が設けられている。FIG. 2 is a sectional view taken along line Y1-Y1 'of FIG.
As shown in FIG. 3, an N type semiconductor substrate (8) which is a first conductivity type substrate, an impurity diffusion region (9) of a first P well which is a first second conductivity type well, and a second conductivity type well are formed. There is a second P-well impurity diffusion region (10). The impurity diffusion region (1 of the second P well which is the second conductivity type well)
0) Vertical CCD and horizontal CC consisting of the first conductivity type area
D is formed. In the impurity diffusion region (10) of the second P well which is the second conductivity type well below the vertical CCD,
An impurity diffusion region (1 ′) of the third P well, which is a layer formed deep in the substrate direction, is formed. Then, the N well (11), oxide film (12), vertical CCD final transfer electrode (5), horizontal CCD transfer electrode A (6) and horizontal CCD
A transfer electrode B (7) is provided.
【００１４】これについて、具体的に説明する。水平Ｃ
ＣＤ下には、ドーズ量２．０Ｅ１２［ｃｍ］で、１３０
０［℃］で５．０時間押し込むことによって作成された
第一のＰウエルと、ドーズ量３．０Ｅ１１［ｃｍ］で、
１１００［℃］で７．０時間押し込むことによって形成
される第二のＰウエルが作成され、垂直ＣＣＤ下には第
二のＰウエルと、ドーズ量２．５Ｅ１２［℃］で、１１
００［℃］１．０時間押し込むことによって形成された
第三のＰウエルが作成されている。This will be specifically described. Horizontal C
Under the CD, the dose is 2.0E12 [cm], 130
With the first P-well created by pushing at 0 [° C.] for 5.0 hours and the dose amount of 3.0E11 [cm],
A second P well formed by being pushed in at 1100 [° C.] for 7.0 hours is created. The second P well is formed under the vertical CCD and the dose amount is 2.5E12 [° C.].
A third P well formed by being pressed at 00 [° C.] for 1.0 hour is created.
【００１５】水平ＣＣＤとのつなぎ部分の垂直ＣＣＤ部
の第二のＰウエルは水平ＣＣＤ電極Ａ下の部分から、水
平ＣＣＤ電極Ｂ下の部分にかけて、イオン注入されない
部分を放射状にもうける。このようにすると、ｅ点とｆ
点では、第二のＰウエルの水平方向の不純物拡散量が異
なるため、ｅ点からｆ点にかけてＮウエルの不純物濃度
が濃くなるような濃度差がつき、水平ＣＣＤ電極Ａ、Ｂ
に５［Ｖ］印加しても、この部分に電位勾配を付けるこ
とができるので、Ｙ１−Ｙ１´部の電位は図３ようにな
る。第二のＰウエルが、入っていない領域がふえるほど
電位は高くなるので、ｂ、ｃ領域において電位が一定と
なるところがなくなり電位勾配を付けることができる。
このため電荷の転送速度を速くすることができる。The second P-well in the vertical CCD section connected to the horizontal CCD has a portion below the horizontal CCD electrode A and a portion below the horizontal CCD electrode B, and a portion not to be ion-implanted is radially provided. In this way, point e and f
At this point, since the amount of impurity diffusion in the horizontal direction of the second P well is different, there is a concentration difference such that the impurity concentration of the N well becomes higher from point e to point f, and the horizontal CCD electrodes A, B
Since a potential gradient can be applied to this portion even if 5 [V] is applied to the potential, the potential of the Y1-Y1 'portion becomes as shown in FIG. Since the electric potential becomes higher as the area where the second P-well does not enter increases, there is no place where the electric potential becomes constant in the b and c regions, and a potential gradient can be provided.
Therefore, the charge transfer rate can be increased.
【００１６】[0016]
【発明の効果】以上説明したように、本発明によれば、
水平ＣＣＤとのつなぎめの垂直ＣＣＤ下の、垂直ＣＣＤ
容量を確保し、シャッター動作時に基板印加電圧によっ
て垂直ＣＣＤを転送中の信号電荷が基板側に流出するこ
とを防ぐことを目的として作成されるＰウエルが、電荷
転送方向に放射状にイオン注入されない領域をもうけて
作られるので、電荷の転送方向にＮウエルの不純物濃度
が濃くなり、電位勾配がつき、電荷転送速度を速くする
ことができるという効果を奏するものである。As described above, according to the present invention,
Vertical CCD under the vertical CCD connected to the horizontal CCD
The P-well, which is created for the purpose of securing the capacitance and preventing the signal charges during transfer from the vertical CCD to the substrate side by the voltage applied to the substrate at the time of shutter operation, is a region where ions are not radially implanted in the charge transfer direction. Therefore, the N well has a high impurity concentration in the charge transfer direction, has a potential gradient, and has the effect of increasing the charge transfer rate.
【図１】 本発明の実施例の水平ＣＣＤとのつなぎめの
垂直ＣＣＤ部の平面図FIG. 1 is a plan view of a vertical CCD section connected to a horizontal CCD according to an embodiment of the present invention.
【図２】 図１のＹ１−Ｙ１´部の垂直断面図FIG. 2 is a vertical sectional view of a Y1-Y1 ′ portion in FIG.
【図３】 図１のＹ１−Ｙ１´部のポテンシャル図FIG. 3 is a potential diagram of Y1-Y1 ′ portion in FIG.
【図４】 従来の垂直ＣＣＤと水平ＣＣＤのつなぎ部を
表す平面図FIG. 4 is a plan view showing a connecting portion between a conventional vertical CCD and a horizontal CCD.
【図５】 図４のＹ２−Ｙ２´部の垂直断面図5 is a vertical cross-sectional view of a Y2-Y2 'portion in FIG.
【図６】 図４のＹ２−Ｙ２´部のポテンシャル図6 is a potential diagram of a Y2-Y2 'portion in FIG.
【図７】 電荷転送素子の概略図FIG. 7 is a schematic diagram of a charge transfer device.
１．１０１ 第二のＰウエルのイオン注入領域 ２．１０２ 垂直ＣＣＤ ３．１０３ 水平ＣＣＤ ４．１０４ チャンネルストッパー ５．１０５ 垂直ＣＣＤ最終転送電極 ６．１０６ 水平ＣＣＤ転送電極Ａ ７．１０７ 水平ＣＣＤ転送電極Ｂ ８．１０８ Ｎ形半導体基板 ９．１０９ 第一のＰウエルの不純物拡散領域 １０．１１０ 第二のＰウエルの不純物拡散領域 １１．１１１ Ｎウエル １２．１１２ 酸化膜 １３．１１３ Ｎ−領域 １´．１０１´ 第三のＰウエルの不純物拡散領域 １２０． 感光部 １２１． 垂直ＣＣＤ部 １２２． 水平ＣＣＤ部 １２３． 電荷検出部 1.101 second P well ion implantation region 2.102 vertical CCD 3.103 horizontal CCD 4.104 channel stopper 5.105 vertical CCD final transfer electrode 6.106 horizontal CCD transfer electrode A 7.107 horizontal CCD transfer electrode B 8.108 N-type semiconductor substrate 9.109 First P-well impurity diffusion region 10.110 Second P-well impurity diffusion region 11.111 N-well 12.112 Oxide film 13.113 N- region 1 ' ． 101 ′ Third P-well impurity diffusion region 120. Photosensitive part 121. Vertical CCD unit 122. Horizontal CCD 123. Charge detector
Claims (2)
ルが形成され、前記第二導電形ウエル内に第一導電形領
域からなる垂直ＣＣＤと水平ＣＣＤが形成され、垂直Ｃ
ＣＤ下の第二導電形ウエルは低濃度で基板方向に深く形
成された層を作成するための第一のイオン注入と、高濃
度で基板方向に浅く形成された層を形成するための第二
のイオン注入とで作成され、また水平ＣＣＤ下の第二導
電形ウエルは、低濃度で基板方向に深く形成するための
前記第一のイオン注入と、より低濃度でより基板方向に
深く形成された層を作成するための第三のイオン注入と
で作成され、水平ＣＣＤとのつなぎ部分の垂直ＣＣＤ下
の前記第二のイオン注入領域が電荷転送方向に連続的な
電位勾配を付けていることを特徴とする固体撮像素子。1. A first well of second conductivity type is formed on a first conductivity type substrate, and vertical CCDs and horizontal CCDs of first conductivity type regions are formed in the wells of second conductivity type.
The second conductivity type well under the CD has a first ion implantation for forming a layer of low concentration and deep in the substrate direction, and a second ion implantation for forming a layer of high concentration and shallow in the substrate direction. The second well of the second conductivity type under the horizontal CCD is formed by the first ion implantation for forming deeply in the substrate direction at a low concentration, and is formed deeper in the substrate direction at a lower concentration. And a second ion-implanted region under the vertical CCD at the connecting portion with the horizontal CCD has a continuous potential gradient in the charge transfer direction. A solid-state image sensor.
ているところが、水平ＣＣＤ方向に放射状にイオン注入
されない領域が形成されていることを特徴とする請求項
１に記載の固体撮像素子。2. The solid-state image pickup device according to claim 1, wherein a region where a continuous potential gradient is applied in the charge transfer direction is formed with a region where radial ion implantation is not performed in the horizontal CCD direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6339128A JP3067562B2 (en) | 1994-12-28 | 1994-12-28 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6339128A JP3067562B2 (en) | 1994-12-28 | 1994-12-28 | Solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08186243A true JPH08186243A (en) | 1996-07-16 |
| JP3067562B2 JP3067562B2 (en) | 2000-07-17 |
Family
ID=18324515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6339128A Expired - Fee Related JP3067562B2 (en) | 1994-12-28 | 1994-12-28 | Solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3067562B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001077351A (en) * | 1999-08-17 | 2001-03-23 | Hyundai Electronics Ind Co Ltd | Charge transfer device |
| US6496223B1 (en) * | 1997-06-19 | 2002-12-17 | Lg Semicon Co., Ltd. | Solid-state image sensor |
-
1994
- 1994-12-28 JP JP6339128A patent/JP3067562B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6496223B1 (en) * | 1997-06-19 | 2002-12-17 | Lg Semicon Co., Ltd. | Solid-state image sensor |
| JP2001077351A (en) * | 1999-08-17 | 2001-03-23 | Hyundai Electronics Ind Co Ltd | Charge transfer device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3067562B2 (en) | 2000-07-17 |
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