JPH08162492A - アモルファスカーボン素子用電極 - Google Patents

アモルファスカーボン素子用電極

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Publication number
JPH08162492A
JPH08162492A JP6305760A JP30576094A JPH08162492A JP H08162492 A JPH08162492 A JP H08162492A JP 6305760 A JP6305760 A JP 6305760A JP 30576094 A JP30576094 A JP 30576094A JP H08162492 A JPH08162492 A JP H08162492A
Authority
JP
Japan
Prior art keywords
amorphous carbon
electrode
layer
intermetallic compound
laminated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6305760A
Other languages
English (en)
Inventor
Hideaki Matsuyama
秀昭 松山
Hiroshi Kanamaru
浩 金丸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
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Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP6305760A priority Critical patent/JPH08162492A/ja
Publication of JPH08162492A publication Critical patent/JPH08162492A/ja
Pending legal-status Critical Current

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Abstract

(57)【要約】 【目的】ワイヤー・ボンディングの密着強度が高く製造
容易なアモルファスカーボン素子を得る。 【構成】電極１１に金属間化合物型炭化物を形成し得る
金属を用いる。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、アモルファスカーボン
(a-C) を絶縁体または半導体として含むアモルファスカ
ーボン素子の電極に係り、特にアモルファスカーボンと
の密着性に優れる電極に関する。
【０００２】
【従来の技術】半導体素子において電極は必須の部分で
あり、従来は半導体素子の電極にはＡｌやＡｕが用いら
れている。これらの金属はワイヤー・ボンディングを行
うことが容易であり、工業的に使用しやすい金属である
からである。図３は半導体式の放射線検出器を示す断面
図である。
【０００３】この放射線検出器は一伝導型のシリコン基
板（半導体基板）１２と、このシリコン基板１２の一表
面に設けられたアモルファスカーボン層（絶縁層）２０
と、このアモルファスカーボン層２０の上に形成された
金属電極１１Ａと、シリコン基板１２の他の表面に形成
されたボロンドープ層１３とアルミニウム電極１４から
なるオーミック電極から構成され、アモルファスカーボ
ンa-C 層２０を絶縁層とした金属／ a-C／Ｓｉ半導体よ
りなるＭＩＳ構造ダイオードとなっている。
【０００４】金属電極１１Ａとオーミック電極の間に逆
バイアスを印加するとシリコン基板１２内に空乏層１５
が形成される。この空乏層１５内に放射線１６が照射さ
れると空乏層１５内に正孔―電子対が発生し、この正孔
―電子対が電位勾配により拡散してバルスを発生する。
このようにして放射線の検出が行われる。アモルファス
カーボンa-C は不純物のない真性状態では抵抗率が約10
10Ω・cmの絶縁体であり不純物を導入すると半導体とな
る。この素子においてアモルファスカーボン a-C層上に
形成される電極１１ＡはアルミニウムＡｌである。絶縁
層であるアモルファスカーボン a-C層を電極１１Ａと半
導体基板１２の間に導入したＭＩＳ構造ダイオードは、
電極と半導体層からなるショットキダイオードよりも洩
れ電流が少ない。
【０００５】一方、アモルファスカーボン a-C層を半導
体として利用した素子を作ることも可能である（Veeras
amy et al, J.Phys.Condens.Matter，５ ,( １９９
３），ｐ１６９参照）。ＢやＰ等の元素を不純物として
アモルファスカーボン a-C層中に少量添加することによ
りＰ型やＮ型の電気伝導を示す半導性のアモルファスカ
ーボン a-Cが得られる。このようにしてＮ型アモルファ
スカーボン a-C層とＰ型Ｓｉ層のヘテロジャンクション
ダイオードが開示されている。この素子においてＮ型ア
モルファスカーボン a-C層上に形成されるオーミックな
金属電極は金Ａｕである。
【０００６】
【発明が解決しようとする課題】しかしながらアモルフ
ァスカーボン層の上に形成されたAlやAuの電極はアモル
ファスカーボン層との密着力が弱くこのためにこれらの
電極にはワイヤー・ボンディングをすることができず素
子の製作が困難であるという問題があった。この発明は
上述の点に鑑みてなされその目的はアモルファスカーボ
ンと密着性の良好な電極を開発すること、またはこの電
極を表面処理してAl線またはAu線とのワイヤー・ボンデ
ィング密着強度を高めることにより製造容易なアモルフ
ァスカーボン素子を提供することにある。
【０００７】
【課題を解決するための手段】上述の目的はこの発明に
よればアモルファスカーボン上に電極を積層したアモル
ファスカーボン素子の電極が金属間化合物型炭化物を形
成し得る金属からなるとすることにより達成される。上
述の発明において金属間化合物型炭化物を形成し得る金
属はSi,Ta,Mo,WまたはCrであるとすること、または金属
間化合物型炭化物を形成し得る金属に対してAl層または
Au層を積層するとすることが有効である。
【０００８】電極金属は真空蒸着，スパッタ法，イオン
プレーティング等の方法を用いてアモルファスカーボン
上に積層することができる。
【０００９】
【作用】Si,Ta,Mo,WまたはCr等の金属はアモルファスカ
ーボンと接触した際に界面に金属間化合物型炭化物を形
成しアモルファスカーボンとの接着性が高くなる。金属
間化合物型炭化物を形成し得る金属に対してAl層または
Au層を積層するとAl線またはAu線の接着強度が高まる。
【００１０】
【実施例】図１はこの発明の実施例に係るアモルファス
カーボン素子を示す断面図である。このアモルファスカ
ーボン素子はＭＩＳ構造ダイオードの放射線検出器であ
る。図３に示す従来の放射線検出器とは電極のみが異な
っている。素子はＰ型Si基板１２上にアモルファスカー
ボン層２０を積層し、さらにアモルファスカーボン２０
層上に電極１１を形成したものである。
【００１１】アモルファスカーボン層の形成 アモルファスカーボン a-C層２０はECR プラズマCVD 法
でSi基板１２上に積層した。積層条件は以下の通りであ
る。 原料ガス: メタンガス ガス圧力: 0.6 Pa 基板温度: 100 ℃ μ波出力: 200 W a-C 膜厚: 50 nm 電極の形成 電極１１はマグネトロン・スパッタ法で成膜した。成膜
条件は以下の通りである。
【００１２】ターゲット金属: Ａｌ，Ａｕ，Ｃｒ, Ｗ,
Ｔａ, Ｍｏ, Ｓｉ スパッタガス: Ar ガス圧力: 0.2 Pa 基板温度: 150 ℃ 出力: 200 W 密着強度の評価方法 密着強度の評価は、接着テープ (3M社製859T, 10mm幅)
による引きはがし法を用いた。
【００１３】図２はこの発明の実施例に係るアモルファ
スカーボン素子の密着強度評価方法を示す断面図であ
る。電極１１上に接着テープ４を貼着し、テープの一端
を電極に垂直な方向に引っ張る。この時に電極が剥離す
る際の張力を測定することによって密着強度とした。た
だしこの接着テープの粘着力が約1000g で有り、電極と
アモルファスカーボン層の密着力がこの値をこえる場合
両層を 1mm□の編目状に切断し、同様の評価を行った。
この切断により粘着力が約1000g 以下に収まる。これら
の評価による剥離箇所は、電極１１とアモルファスカー
ボンa-C 層２０の界面であった。
【００１４】ワイヤーボンディング Ｃｒ, Ｗ, Ｔａ, Ｍｏ, Ｓｉ電極１１上にAl層を 1μm
厚さに積層し、ワイヤーボンディングの可能性につき評
価を行った。ワイヤーは50μm のAlワイヤーとした。Au
電極については25μm のAuワイヤーを用いた。 評価結果 評価結果が表１に示される。
【００１５】
【表１】 電極として金属間化合物型炭化物をつくる金属であるＣ
ｒ, Ｗ, Ｔａ, Ｍｏ,Ｓｉを用いることにより密着強度
が100 〜300gから900g以上に増加した。またAl層などと
の積層構造にすることにより、ワイヤー・ボンディング
の密着性が高まり、アモルファスカーボン素子の製造が
容易になった。
【００１６】
【発明の効果】この発明によればアモルファスカーボン
上に金属間化合物型炭化物を形成し得る金属を用いて電
極を形成するので電極とアモルファスカーボンとの密着
性が良くなり、ワイヤー・ボンディングが可能になる。
さらに金属間化合物型炭化物を形成し得る金属の上にAl
層またはAu層が積層されるのでAl線またはAu線をワイヤ
ー・ボンディングした際の密着強度が高まり、信頼性に
優れるアモルファスカーボン素子の製作ができる。
【図面の簡単な説明】
【図１】この発明の実施例に係るアモルファスカーボン
素子を示す断面図
【図２】この発明の実施例に係るアモルファスカーボン
素子の密着強度評価方法を示す断面図
【図３】半導体式の放射線検出器を示す断面図
【符号の説明】
４ 接着テープ １１ 電極 １１Ａ 電極 １２ シリコン基板 １３ ボロンドープ層 １４ アルミニウム電極 １５ 空乏層 １６ 放射線 ２０ アモルファスカーボン層
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 29/43 29/861 31/09 31/10 // Ｈ０１Ｌ 31/04 Ｈ０１Ｌ 31/00 Ａ 31/10 Ｅ 31/04 Ｍ

Claims (3)

    【特許請求の範囲】
  1. 【請求項１】アモルファスカーボン上に電極を積層した
    アモルファスカーボン素子の電極が金属間化合物型炭化
    物を形成し得る金属からなることを特徴とするアモルフ
    ァスカーボン素子用電極。
  2. 【請求項２】請求項１に記載のアモルファスカーボン素
    子用電極において、金属間化合物型炭化物を形成し得る
    金属がSi,Ta,Mo,WまたはCrであることを特徴とするアモ
    ルファスカーボン素子用電極。
  3. 【請求項３】請求項２に記載のアモルファスカーボン素
    子用電極において、金属間化合物型炭化物を形成し得る
    金属の上にAl層またはAu層が積層されてなることを特徴
    とするアモルファスカーボン素子用電極。
JP6305760A 1994-12-09 1994-12-09 アモルファスカーボン素子用電極 Pending JPH08162492A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6305760A JPH08162492A (ja) 1994-12-09 1994-12-09 アモルファスカーボン素子用電極

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6305760A JPH08162492A (ja) 1994-12-09 1994-12-09 アモルファスカーボン素子用電極

Publications (1)

Publication Number Publication Date
JPH08162492A true JPH08162492A (ja) 1996-06-21

Family

ID=17949023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6305760A Pending JPH08162492A (ja) 1994-12-09 1994-12-09 アモルファスカーボン素子用電極

Country Status (1)

Country Link
JP (1) JPH08162492A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011501149A (ja) * 2007-11-01 2011-01-06 オイ アジャト， リミテッド ＣｄＴｅ／ＣｄＺｎＴｅ放射線イメージング検出器及び高／バイアス電圧手段

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011501149A (ja) * 2007-11-01 2011-01-06 オイ アジャト， リミテッド ＣｄＴｅ／ＣｄＺｎＴｅ放射線イメージング検出器及び高／バイアス電圧手段

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