JPH08124676A - Heat resisting substrate structure for thin film el element - Google Patents
Heat resisting substrate structure for thin film el elementInfo
- Publication number
- JPH08124676A JPH08124676A JP6254043A JP25404394A JPH08124676A JP H08124676 A JPH08124676 A JP H08124676A JP 6254043 A JP6254043 A JP 6254043A JP 25404394 A JP25404394 A JP 25404394A JP H08124676 A JPH08124676 A JP H08124676A
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating layer
- substrate
- metal
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 35
- 239000010409 thin film Substances 0.000 title claims description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 239000012212 insulator Substances 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011521 glass Substances 0.000 abstract description 7
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 abstract description 4
- 239000010937 tungsten Substances 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000004132 cross linking Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明はフルカラー、マルチカ
ラー薄膜ＥＬ素子に係わり、特に耐熱基板構造に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to full-color and multi-color thin film EL devices, and more particularly to a heat-resistant substrate structure.
【０００２】[0002]
【従来の技術】薄膜ＥＬ素子は平板で薄く大面積形状の
表示パネルができるので、文字表示・図形表示・画像表
示と幅広い用途が期待され、近年脚光を浴びている。従
来例に係わる図２に基づいて説明する。図２は薄膜ＥＬ
素子を示す断面構成図である。2. Description of the Related Art A thin film EL element can be used as a flat display panel having a large area and is thin. Therefore, it is expected to have a wide range of applications such as character display, graphic display and image display, and has been in the limelight in recent years. A description will be given based on FIG. 2 related to the conventional example. Figure 2 is a thin film EL
It is a section lineblock diagram showing an element.
【０００３】白色を発光する薄膜ＥＬ素子とカラーフィ
ルターとを組み合わせる薄膜ＥＬ素子については、図２
に示すように耐熱基板１上に金属電極２、第１絶縁層
３、発光層４を順次積層し、発光層４を第２絶縁層５で
被覆しその上に透明電極６を形成したものである。この
場合金属電極２は縁面距離を確保するために、図２に示
すテーパー部２ａがテーパー状に加工されている必要が
ある。この薄膜ＥＬ素子の金属電極２を加工する方法は
化学エッチング法等種々あるが、反転画像を用いたリフ
トオフ法（配線部以外の場所にあらかじめホトレジスト
膜をつけておき、その上に金属を付着させた後、ホトレ
ジストの除去とともに配線部以外の金属を除去してパタ
ーンを形成する方法）を採用する場合においては、テー
パー部２ａを形成するためには、金属電極２を付着させ
る前に、フォトレジストに逆テーパー部７ａを設ける必
要があり、この逆テーパー部７ａはレジスト膜露光時の
露光光を耐熱基板１で反射させ、この反射光によりレジ
スト膜下部を照射させることで形成するため、反射性の
リフトオフ用レジスト塗布専用の基板を耐熱基板１とし
て用いているのが現状である。FIG. 2 shows a thin-film EL element in which a thin-film EL element that emits white light and a color filter are combined.
As shown in FIG. 3, a metal electrode 2, a first insulating layer 3, and a light emitting layer 4 are sequentially laminated on a heat resistant substrate 1, the light emitting layer 4 is covered with a second insulating layer 5, and a transparent electrode 6 is formed thereon. is there. In this case, in order to secure the edge distance, the metal electrode 2 needs to have the tapered portion 2a shown in FIG. 2 processed into a tapered shape. There are various methods such as a chemical etching method for processing the metal electrode 2 of this thin film EL element, but a lift-off method using an inverted image (a photoresist film is preliminarily attached to a place other than the wiring portion and a metal is adhered on the photoresist film). Then, in order to form the taper portion 2a, the photoresist is removed before the metal electrode 2 is attached. It is necessary to provide a reverse taper portion 7a on the heat resisting substrate 1, and the reverse taper portion 7a is formed by reflecting the exposure light at the time of exposing the resist film on the heat-resistant substrate 1 and irradiating the lower portion of the resist film with the reflected light. At present, the substrate for exclusive use of the lift-off resist coating is used as the heat-resistant substrate 1.
【０００４】[0004]
【発明が解決しようとする課題】前述の方法によれば、
反射性のリフトオフ用レジスト塗布専用の基板を耐熱基
板として用いるため高価であることから、製造コストが
高くなるという問題が発生している。この発明は前記の
問題点に鑑みてなされたものであり、その目的は一般市
販のガラスを用い安いコストで供給できる薄膜ＥＬ素子
の耐熱基板構造を提供することにある。According to the method described above,
Since a substrate for exclusive use of reflective lift-off resist coating is used as a heat-resistant substrate, it is expensive, which causes a problem of increased manufacturing cost. The present invention has been made in view of the above problems, and an object thereof is to provide a heat-resistant substrate structure of a thin film EL element which can be supplied at a low cost using general commercially available glass.
【０００５】[0005]
【課題を解決するための手段】この発明によれば前述の
目的は、耐熱基板上に金属電極、第１絶縁層、発光層を
順次積層し、発光層を第２絶縁層で被覆しその上に透明
電極を形成してなる薄膜ＥＬ素子において、前記耐熱基
板は透明絶縁体上に金属膜、透明絶縁層が順次積層され
ることにより達成される。According to the present invention, the aforementioned object is to stack a metal electrode, a first insulating layer and a light emitting layer in this order on a heat resistant substrate, and cover the light emitting layer with a second insulating layer. In the thin film EL device having the transparent electrode formed on the transparent substrate, the heat resistant substrate is achieved by sequentially stacking a metal film and a transparent insulating layer on a transparent insulator.
【０００６】なお、前記金属の反射率は５０パーセント
以上であること。具体的にはアルミニウムを使用するこ
とが有効である。The reflectance of the metal should be 50% or more. Specifically, it is effective to use aluminum.
【０００７】[0007]
【作用】この発明の構成によれば、耐熱基板は透明絶縁
体上に反射率の高い金属膜、透明絶縁層を順次積層する
構造としたため、あらかじめ透明絶縁層上にレジスト膜
を塗布し、露光を２回に分けて行い２回目の露光量を１
回目の露光量より強くすることにより、後露光時に照射
した光が透明絶縁層を透過し、金属膜で反射され、再度
透明絶縁層を透過しレジスト膜下部を照射する。このレ
ジスト膜下部照射によりレジストは逆テーパー状にな
る。According to the structure of the present invention, since the heat-resistant substrate has a structure in which a metal film having a high reflectance and a transparent insulating layer are sequentially laminated on a transparent insulator, a resist film is coated on the transparent insulating layer in advance and exposed. Do it in two steps and set the second exposure to 1
By making the exposure amount stronger than the exposure amount of the second time, the light irradiated at the time of the post-exposure is transmitted through the transparent insulating layer, reflected by the metal film, transmitted through the transparent insulating layer again, and irradiated to the lower portion of the resist film. By irradiating the lower part of the resist film, the resist becomes reversely tapered.
【０００８】[0008]
【実施例】図１に基づいて説明をする。図１はこの実施
例を示す説明図であり、（ａ）は耐熱基板の構成と金属
電極形成前の状態、（ｂ）は金属電極形成後の状態を示
す。従来例と同一部分あるいは同一機能部分には同じ符
号を付してある。透明絶縁体１ａ（ガラス基板）上に金
属膜１ｂとしてアルミニウムをスパッタ法で２００ｎｍ
成膜し、その上に連続して、透明絶縁層１ｃとしてＳｉ
Ｏ2 膜を５０ｎｍ成膜した。その後透明絶縁層１ｃ上に
レジスト（ＡＺ５２００Ｅ：ヘキスト社製）をスピンコ
ーターで０．４μｍの厚みで塗布した。そのものを１０
０℃、３０分でプリベークを行い露光量１１ｍＪ／ｃｍ
2 で反転画像パターン状に紫外線照射を行い、クロスリ
ンク（高分子結合）のために１２０℃、３分でベーキン
グを行った。その後、後露光（フラッド露光）として露
光量１５ｍＪ／ｃｍ 2 で照射を行ったのち現像液（ＡＺ
３１２ＭＩＦ〔１：１〕：ヘキスト社製）で現像し図１
（ａ）に示すような逆テーパー状のレジスト７を形成し
た。DESCRIPTION OF THE PREFERRED EMBODIMENTS An explanation will be given based on FIG. Figure 1
It is explanatory drawing which shows an example, (a) is a structure of heat resistant substrate, and metal.
The state before electrode formation, (b) shows the state after metal electrode formation.
You. The same symbols as those of the conventional example
The number is attached. Gold on transparent insulator 1a (glass substrate)
Aluminum is used as the metal film 1b by a sputtering method to have a thickness of 200 nm.
A film is formed, and Si is continuously formed as a transparent insulating layer 1c on the film.
O2The film was formed to 50 nm. After that, on the transparent insulating layer 1c
Spin resist (AZ5200E: Hoechst)
Coater to a thickness of 0.4 μm. Itself 10
Pre-bake at 0 ° C for 30 minutes, exposure dose 11mJ / cm
2UV irradiation in a reverse image pattern with
Baking at 120 ° C for 3 minutes due to link (polymer bond)
I went After that, it is exposed as a post exposure (flood exposure).
Light intensity 15mJ / cm 2After irradiating with a developing solution (AZ
312 MIF [1: 1]: manufactured by Hoechst) and developed.
Form a resist 7 having a reverse taper shape as shown in FIG.
Was.
【０００９】この基板を用いて金属電極２としてタング
ステンをスパッタ法で３００ｎｍ成膜ししたのち、剥離
材にてレジストを剥離して図１（ｂ）に示すような金属
電極２を形成した。さらに、金属膜１ｂとしてタングス
テン、モリブデンを用い前述の方法で金属電極２を形成
し、比較した結果アルミニウムに比較してテーパー形状
に若干の違いが出るが実用上問題の出るものではなかっ
た。なお金属膜１ｂとして用いた各金属の反射率はアル
ミニウム８０〜８５％、モリブデン６０％、タングステ
ン５０％である。このことから使用する金属の反射率は
５０％以上あれば実用上問題ないが、好ましくは８０％
以上あればさらに有効であることを確認した。A tungsten film having a thickness of 300 nm was formed as a metal electrode 2 using this substrate by a sputtering method, and then the resist was peeled off by a peeling material to form a metal electrode 2 as shown in FIG. 1 (b). Further, as a result of forming the metal electrode 2 by using the tungsten and molybdenum as the metal film 1b by the above-mentioned method and comparing them, there is a slight difference in the tapered shape as compared with the aluminum, but there is no problem in practical use. The reflectance of each metal used as the metal film 1b is 80 to 85% aluminum, 60% molybdenum, and 50% tungsten. Therefore, if the reflectance of the metal used is 50% or more, there is no practical problem, but it is preferably 80%.
It was confirmed that the above was more effective.
【００１０】[0010]
【発明の効果】この発明によれば、薄膜ＥＬ素子の金属
電極形成にリフトオフ法を採用する場合、価格の高い反
射性のリフトオフ用レジスト塗布専用の基板を、市販の
安価なガラス基板上に金属膜、透明絶縁層を順次積層し
たコストの安い耐熱基板に変えることができる。According to the present invention, when the lift-off method is used for forming a metal electrode of a thin film EL element, a high-priced substrate for exclusive use of a reflective lift-off resist is coated on a commercially available, inexpensive glass substrate. The cost can be changed to a heat-resistant substrate having a film and a transparent insulating layer which are sequentially laminated.
【図１】この実施例を示す説明図であり、（ａ）は耐熱
基板の構成と金属電極形成前の状態、（ｂ）は金属電極
形成後の状態を示す1A and 1B are explanatory views showing this embodiment, in which FIG. 1A shows a structure of a heat-resistant substrate and a state before forming a metal electrode, and FIG. 1B shows a state after forming a metal electrode.
【図２】従来例の薄膜ＥＬ素子を示す断面構成図FIG. 2 is a sectional configuration diagram showing a conventional thin film EL element.
１ 耐熱基板 １ａ 透明絶縁体 １ｂ 金属膜 １ｃ 透明絶縁層 ２ 金属電極 ２ａ テーパー部 ３ 第１絶縁層 ４ 発光層 ５ 第２絶縁層 ６ 透明電極 ７ レジスト ７ａ 逆テーパー部 1 Heat Resistant Substrate 1a Transparent Insulator 1b Metal Film 1c Transparent Insulating Layer 2 Metal Electrode 2a Tapered Part 3 First Insulating Layer 4 Light Emitting Layer 5 Second Insulating Layer 6 Transparent Electrode 7 Resist 7a Reverse Tapered Part
Claims (3)
層を順次積層し、発光層を第２絶縁層で被覆しその上に
透明電極を形成してなる薄膜ＥＬ素子において、前記耐
熱基板は透明絶縁体上に金属膜、透明絶縁層が順次積層
されたものであることを特徴とする薄膜ＥＬ素子の耐熱
基板構造。1. A thin-film EL device comprising a heat-resistant substrate, a metal electrode, a first insulating layer, and a light-emitting layer, which are sequentially laminated, the light-emitting layer is covered with a second insulating layer, and a transparent electrode is formed on the second insulating layer. The heat-resistant substrate is a heat-resistant substrate structure for a thin-film EL device, characterized in that a metal film and a transparent insulating layer are sequentially laminated on a transparent insulator.
造において、前記金属膜の反射率は５０パーセント以上
であることを特徴とする薄膜ＥＬ素子の耐熱基板構造。2. The heat-resistant substrate structure for a thin film EL element according to claim 1, wherein the reflectance of the metal film is 50% or more.
熱基板構造において、前記金属膜はアルミニウムである
ことを特徴とする薄膜ＥＬ素子の耐熱基板構造。3. The heat resistant substrate structure for a thin film EL element according to claim 1, wherein the metal film is aluminum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6254043A JPH08124676A (en) | 1994-10-20 | 1994-10-20 | Heat resisting substrate structure for thin film el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6254043A JPH08124676A (en) | 1994-10-20 | 1994-10-20 | Heat resisting substrate structure for thin film el element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08124676A true JPH08124676A (en) | 1996-05-17 |
Family
ID=17259447
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6254043A Pending JPH08124676A (en) | 1994-10-20 | 1994-10-20 | Heat resisting substrate structure for thin film el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08124676A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004152738A (en) * | 2002-11-01 | 2004-05-27 | Seiko Epson Corp | Organic el panel, its manufacturing method, and electro-optic panel and electronic device using the same |
| KR100437478B1 (en) * | 2000-08-22 | 2004-06-23 | 삼성에스디아이 주식회사 | Organic Electroluminescence Device with an Improved Heat Radiation Structure |
| KR100719554B1 (en) * | 2005-07-06 | 2007-05-17 | 삼성에스디아이 주식회사 | Flat panel display apparatus and method of manufacturing the same |
-
1994
- 1994-10-20 JP JP6254043A patent/JPH08124676A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100437478B1 (en) * | 2000-08-22 | 2004-06-23 | 삼성에스디아이 주식회사 | Organic Electroluminescence Device with an Improved Heat Radiation Structure |
| JP2004152738A (en) * | 2002-11-01 | 2004-05-27 | Seiko Epson Corp | Organic el panel, its manufacturing method, and electro-optic panel and electronic device using the same |
| KR100719554B1 (en) * | 2005-07-06 | 2007-05-17 | 삼성에스디아이 주식회사 | Flat panel display apparatus and method of manufacturing the same |
| US8030844B2 (en) | 2005-07-06 | 2011-10-04 | Samsung Mobile Display Co., Ltd. | Flat panel display and method of manufacturing the same |
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