JPS61170738A - Lift-off process by multi-layered resist - Google Patents

Lift-off process by multi-layered resist

Info

Publication number
JPS61170738A
JPS61170738A JP1185985A JP1185985A JPS61170738A JP S61170738 A JPS61170738 A JP S61170738A JP 1185985 A JP1185985 A JP 1185985A JP 1185985 A JP1185985 A JP 1185985A JP S61170738 A JPS61170738 A JP S61170738A
Authority
JP
Japan
Prior art keywords
photoresist
resist
coupling agent
surface
obtd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1185985A
Inventor
Yoichi Ono
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP1185985A priority Critical patent/JPS61170738A/en
Publication of JPS61170738A publication Critical patent/JPS61170738A/en
Application status is Granted legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Abstract

PURPOSE:To laminate the same resist into two layers and to make possible the easy formation of an overhang shape by treating preliminarily the resist surface of the lower layer with a silane coupling agent thereby preventing the dissolution between the resists. CONSTITUTION:The photoresist 11 is coated on a substrate 10 and the entire surface is exposed with UV rays 14 after prebaking. The surface of the photoresist 11 is treated with the silane coupling agent 12 or titanate coupling agent 12 and after drying, the same resist 11 is similarly coated thereon and is dried. The resist is then exposed through a photomask of the prescribed pattern and the overhang shape is obtd. by one developing stage. A thin film 13 is formed at the temp. at which the photoresist does not deform and finally the photoresist layer is removed, by which the thin film pattern is obtd.
JP1185985A 1985-01-25 1985-01-25 Lift-off process by multi-layered resist Granted JPS61170738A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1185985A JPS61170738A (en) 1985-01-25 1985-01-25 Lift-off process by multi-layered resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1185985A JPS61170738A (en) 1985-01-25 1985-01-25 Lift-off process by multi-layered resist

Publications (1)

Publication Number Publication Date
JPS61170738A true JPS61170738A (en) 1986-08-01

Family

ID=11789449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1185985A Granted JPS61170738A (en) 1985-01-25 1985-01-25 Lift-off process by multi-layered resist

Country Status (1)

Country Link
JP (1) JPS61170738A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0264845A2 (en) * 1986-10-20 1988-04-27 Hoechst Celanese Corporation Multilayer positive-registration material
JPH06196399A (en) * 1991-04-26 1994-07-15 Internatl Business Mach Corp <Ibm> Method for forming patterned film on substrate
JPH11233259A (en) * 1997-10-15 1999-08-27 Siemens Ag Manufacture of organic electroluminescent device
GB2442030A (en) * 2006-09-19 2008-03-26 Innos Ltd Resist exposure and patterning process

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0264845A2 (en) * 1986-10-20 1988-04-27 Hoechst Celanese Corporation Multilayer positive-registration material
JPH06196399A (en) * 1991-04-26 1994-07-15 Internatl Business Mach Corp <Ibm> Method for forming patterned film on substrate
JPH0795521B2 (en) * 1991-04-26 1995-10-11 インターナショナル・ビジネス・マシーンズ・コーポレイション A method of forming a pattern with the film on the substrate
JPH11233259A (en) * 1997-10-15 1999-08-27 Siemens Ag Manufacture of organic electroluminescent device
GB2442030A (en) * 2006-09-19 2008-03-26 Innos Ltd Resist exposure and patterning process

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