JPH079906B2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH079906B2 JPH079906B2 JP60084159A JP8415985A JPH079906B2 JP H079906 B2 JPH079906 B2 JP H079906B2 JP 60084159 A JP60084159 A JP 60084159A JP 8415985 A JP8415985 A JP 8415985A JP H079906 B2 JPH079906 B2 JP H079906B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- connector
- conductive elastic
- present
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の構造、特に外部接続端子である突
起電極の構造に関する。The present invention relates to a structure of a semiconductor device, and more particularly to a structure of a protruding electrode which is an external connection terminal.
回路基板へコネクターを介して半導体素子をフェイスボ
ンディングする方法が周知であり、主に液晶表示装置
へ、これを駆動するIC素子を実装する場合に用いられて
いる。この実装する半導体素子は圧接構造によって他の
配線基板と接続する場合、ボンディングの信頼性上必ず
コネクターを介して行なうのが常であり、このような方
法は半導体素子上面にマトリックス状に配置された多数
の突起電極と液晶表示装置の入力端子とを一括してボン
ディング出来るうえ、素子の交換等も容易という利点を
持っている。A method of face-bonding a semiconductor element to a circuit board via a connector is well known, and is mainly used when mounting an IC element for driving the same on a liquid crystal display device. When this semiconductor element to be mounted is connected to another wiring board by a pressure contact structure, it is always done through a connector for reliability of bonding. Such a method is arranged in a matrix on the upper surface of the semiconductor element. It has the advantage that a large number of protruding electrodes and the input terminals of the liquid crystal display device can be bonded together and the elements can be easily replaced.
一方、さらに薄型化が望まれる液晶表示装置等にはコネ
クターの占める厚みは無視出来ないものがあり、従来は
それらを構成している部品、さらにはその部材を薄型化
することで目的を達成することが多い。On the other hand, the thickness occupied by the connector cannot be ignored in some liquid crystal display devices and the like, which are required to be further thinned. In the past, the object is achieved by thinning the components that compose them and the members thereof. Often.
第５図は従来の突起電極を持つ半導体装置の一例の断面
図で、１は半導体基板、２はアルミ配線、３は表面保護
のためのPSG膜、４はクロム層、５は銅層、６は金メッ
キにて形成した突起電極である。第６図は従来のコネク
ターを用いて、配線基板にIC素子をフェイスボンディン
グした一実施例の断面図で、８はIC素子、９はガラス基
板、10は突起電極、11はリード、12はコネクターの部材
であるポリイミド樹脂等の絶縁基板、13はコネクターの
部材である導電性ゴムロッド、14はIC位置決め枠、15は
IC押エバネである。FIG. 5 is a cross-sectional view of an example of a conventional semiconductor device having a protruding electrode, 1 is a semiconductor substrate, 2 is aluminum wiring, 3 is a PSG film for surface protection, 4 is a chrome layer, 5 is a copper layer, 6 Is a protruding electrode formed by gold plating. FIG. 6 is a sectional view of an embodiment in which an IC element is face-bonded to a wiring board using a conventional connector. 8 is an IC element, 9 is a glass substrate, 10 is a protruding electrode, 11 is a lead, and 12 is a connector. Insulating board such as polyimide resin which is the member of 13, conductive rubber rod which is the member of connector, 14 IC positioning frame, 15
It is IC push evan.
しかしながら、このような従来手法では部品強度の低下
をもたらし、又実装費用に占めるコネクターのコスト及
び素子の突起電極形成にかかるコストは大きなものであ
るうえ、コネクターが独立して介在しているため、外部
衝撃に対するボンディングの信頼性は必ずしも高いもの
ではなく、素子交換等の際には素子とコネクターとを位
置合せし直す必要があった。However, in such a conventional method, the strength of the component is lowered, and the cost of the connector in the mounting cost and the cost of forming the projecting electrode of the element are large, and the connector is interposed independently. The reliability of bonding against external impact is not always high, and it was necessary to realign the element and the connector when exchanging the element.
本発明は上記従来の課題に鑑みなされたものであり、突
起電極形成及び実装に係るコトスダウン、信頼性及び作
業性を向上させ、薄型化にも寄与する構造を持った半導
体装置を提供することにある。The present invention has been made in view of the above conventional problems, and provides a semiconductor device having a structure that contributes to cost reduction, reliability and workability in forming and mounting a protruding electrode, and contributes to thinning. is there.
上記目的を達成するために、本発明は、ペースト状を呈
する架橋処理前の導電ゴムは、スクリーン印刷出来るこ
とに着目し、突起電極にコネクターの機能をも併せ持た
せたことを特徴とする。In order to achieve the above-mentioned object, the present invention is characterized in that the paste-like conductive rubber before the cross-linking treatment can be screen-printed, and the projection electrode also has the function of a connector.
本発明によれば、コネクターを省略出来るので、従来の
ような位置合せの必要がなく、装置の薄型化に寄与し、
ボンディングの信頼性は極めて高くなるうえ、突起電極
形成に係るコストを下げることも可能である。According to the present invention, since the connector can be omitted, there is no need for the conventional alignment, which contributes to the thinning of the device,
The reliability of the bonding becomes extremely high, and the cost for forming the bump electrodes can be reduced.
以下図面に基づいて本発明の好適な実施例を説明する。 Preferred embodiments of the present invention will be described below with reference to the drawings.
第１図は導電弾性突起電極を半導体素子上に配した本発
明による半導体装置の一実施例の断面図であり、７はシ
リコンゴムに導電フィラーとしてカーボンパウダーを60
％配した導電弾性突起電極である。この導電弾性突起電
極は、架橋剤とカーボンパウダーを配したシリコンゴム
を乳鉢にて混練し、スクリーン印刷にて素子上に適量印
刷分配した後、熱処理を行ない形成したものであり、第
２図は従来の突起電極上に導電弾性ゴムを配し、複合突
起電極を形成した本発明による半導体装置の他の一実施
例の断面図で、7aは複合導電弾性突起電極である。第３
図は本発明による導電弾性突起電極を設けた半導体装置
を配線基板にフェイスボンディングした一実施例の断面
図で、8aは本発明による半導体装置、７は導電弾性突起
電極である。また第４図は本発明による複合突起電極を
設けた半導体装置を配線基板にフェイスボンディングし
た一実施例の断面図で、8bは本発明による半導体装置で
ある。FIG. 1 is a cross-sectional view of an embodiment of a semiconductor device according to the present invention in which a conductive elastic bump electrode is arranged on a semiconductor element, and 7 is a silicon rubber containing carbon powder as a conductive filler.
% Of conductive elastic protrusion electrodes. This conductive elastic bump electrode is formed by kneading silicon rubber in which a cross-linking agent and carbon powder are placed in a mortar and printing and distributing an appropriate amount on the element by screen printing, followed by heat treatment. 7a is a cross-sectional view of another embodiment of the semiconductor device according to the present invention in which conductive elastic rubber is arranged on a conventional protruding electrode to form a composite protruding electrode, and 7a is a composite conductive elastic protruding electrode. Third
The figure is a cross-sectional view of an embodiment in which a semiconductor device provided with conductive elastic bump electrodes according to the present invention is face bonded to a wiring board. Further, FIG. 4 is a sectional view of an embodiment in which a semiconductor device provided with a composite bump electrode according to the present invention is face bonded to a wiring board, and 8b is a semiconductor device according to the present invention.
本発明による半導体装置に設けられた導電弾性突起電極
の高さは、第１図及び第２図に於ける導電弾性ゴム半球
の底辺の直径に対して、1.0〜1.5倍程度が適当であり、
この場合、突起電極１個当り1.5グラム程度の荷重で充
分機能する。The height of the conductive elastic projection electrode provided in the semiconductor device according to the present invention is appropriately 1.0 to 1.5 times the diameter of the base of the conductive elastic rubber hemisphere in FIGS. 1 and 2.
In this case, a load of about 1.5 grams per protruding electrode works well.
以上説明したように、本発明によれば、従来のコネクタ
ーを省略出来ることによって、実装コストの低減及び装
置の薄型化を図ることが出来、又半導体製造コストの低
減及び素子とコネクターとの位置合せ不用による作業性
の向上が可能となる。As described above, according to the present invention, the conventional connector can be omitted, so that the mounting cost can be reduced and the device can be made thinner, and the semiconductor manufacturing cost can be reduced and the element and the connector can be aligned. It is possible to improve workability by not using it.
第１図及び第２図は本発明による半導体装置の一実施例
の断面図、第３図及び第４図は本発明による半導体装置
を配線基板へ実装した一実施例の断面図、第５図は従来
の半導体装置の一実施例の断面図、第６図は従来の半導
体装置をコネクターを介して配線基板へ実装した一実施
例の断面図である。 ７、10……導電弾性突起電極、 ８、8a、8b……半導体装置、 7a……複合突起電極。1 and 2 are sectional views of an embodiment of a semiconductor device according to the present invention, and FIGS. 3 and 4 are sectional views of an embodiment in which the semiconductor device according to the present invention is mounted on a wiring board, and FIG. Is a sectional view of an example of a conventional semiconductor device, and FIG. 6 is a sectional view of an example of a conventional semiconductor device mounted on a wiring board via a connector. 7, 10 ... Conductive elastic bump electrode, 8, 8a, 8b ... Semiconductor device, 7a ... Composite bump electrode.
Claims (1)
押えバネ（15）とを有し、 半導体装置（8a）は導電弾性突起電極（７）を有し、 ガラス基板（９）はリード（11）とIC位置決め枠（14）
とを有し、 IC位置決め枠（14）によって導電弾性突起電極（７）と
リード（11）とを位置合わせし、IC押えバネ（15）によ
り導電弾性突起電極（７）を押圧してガラス基板（９）
に半導体装置（8a）を実装することを特徴とする半導体
装置。1. A semiconductor device (8a), a glass substrate (9), and an IC.
The semiconductor device (8a) has a conductive elastic protrusion electrode (7), the glass substrate (9) has a lead (11) and an IC positioning frame (14).
And the conductive elastic projection electrode (7) and the lead (11) are aligned by the IC positioning frame (14), and the conductive elastic projection electrode (7) is pressed by the IC pressing spring (15) to make the glass substrate. (9)
A semiconductor device, wherein the semiconductor device (8a) is mounted on.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60084159A JPH079906B2 (en) | 1985-04-19 | 1985-04-19 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60084159A JPH079906B2 (en) | 1985-04-19 | 1985-04-19 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61242041A JPS61242041A (en) | 1986-10-28 |
| JPH079906B2 true JPH079906B2 (en) | 1995-02-01 |
Family
ID=13822716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60084159A Expired - Lifetime JPH079906B2 (en) | 1985-04-19 | 1985-04-19 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH079906B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63150930A (en) * | 1986-12-15 | 1988-06-23 | Shin Etsu Polymer Co Ltd | Semiconductor device |
| JPS63160347A (en) * | 1986-12-24 | 1988-07-04 | Seikosha Co Ltd | Ic chip |
| JPS63160348A (en) * | 1986-12-24 | 1988-07-04 | Seikosha Co Ltd | Ic chip |
| JPS63160351A (en) * | 1986-12-24 | 1988-07-04 | Seikosha Co Ltd | Method for packaging ic chip |
| DE10016132A1 (en) | 2000-03-31 | 2001-10-18 | Infineon Technologies Ag | Electronic component for electronic devices comprises electronic switch and conducting paths on surface of the component to electrically connect the switch with metal-coated protrusions made from rubber-elastic insulating material |
| DE10164800B4 (en) * | 2001-11-02 | 2005-03-31 | Infineon Technologies Ag | Method for producing an electronic component with a plurality of chips stacked on top of one another and contacted with one another |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51104261A (en) * | 1975-03-12 | 1976-09-14 | Suwa Seikosha Kk | |
| JPS5650539A (en) * | 1979-09-29 | 1981-05-07 | Sharp Corp | Semiconductor device |
-
1985
- 1985-04-19 JP JP60084159A patent/JPH079906B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61242041A (en) | 1986-10-28 |
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