JPH076960A - 多結晶半導体薄膜の生成方法 - Google Patents

多結晶半導体薄膜の生成方法

Info

Publication number
JPH076960A
JPH076960A JP5144111A JP14411193A JPH076960A JP H076960 A JPH076960 A JP H076960A JP 5144111 A JP5144111 A JP 5144111A JP 14411193 A JP14411193 A JP 14411193A JP H076960 A JPH076960 A JP H076960A
Authority
JP
Japan
Prior art keywords
thin film
semiconductor thin
amorphous
region
crystallized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5144111A
Other languages
English (en)
Japanese (ja)
Inventor
Akihiko Asano
明彦 浅野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP5144111A priority Critical patent/JPH076960A/ja
Priority to TW083105160A priority patent/TW321690B/zh
Priority to US08/260,304 priority patent/US5409867A/en
Priority to DE4421109A priority patent/DE4421109C2/de
Publication of JPH076960A publication Critical patent/JPH076960A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/905—Electron beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/048—Energy beam assisted EPI growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/071—Heating, selective

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
JP5144111A 1993-06-16 1993-06-16 多結晶半導体薄膜の生成方法 Pending JPH076960A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP5144111A JPH076960A (ja) 1993-06-16 1993-06-16 多結晶半導体薄膜の生成方法
TW083105160A TW321690B (cg-RX-API-DMAC7.html) 1993-06-16 1994-06-07
US08/260,304 US5409867A (en) 1993-06-16 1994-06-15 Method of producing polycrystalline semiconductor thin film
DE4421109A DE4421109C2 (de) 1993-06-16 1994-06-16 Verfahren zum Herstellen eines polykristallinen Halbleiterdünnfilms

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5144111A JPH076960A (ja) 1993-06-16 1993-06-16 多結晶半導体薄膜の生成方法

Publications (1)

Publication Number Publication Date
JPH076960A true JPH076960A (ja) 1995-01-10

Family

ID=15354444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5144111A Pending JPH076960A (ja) 1993-06-16 1993-06-16 多結晶半導体薄膜の生成方法

Country Status (4)

Country Link
US (1) US5409867A (cg-RX-API-DMAC7.html)
JP (1) JPH076960A (cg-RX-API-DMAC7.html)
DE (1) DE4421109C2 (cg-RX-API-DMAC7.html)
TW (1) TW321690B (cg-RX-API-DMAC7.html)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3881715B2 (ja) * 1995-02-09 2007-02-14 セイコーエプソン株式会社 結晶性半導体膜の形成方法、アクティブマトリクス装置の製造方法、及び電子装置の製造方法
JP3778456B2 (ja) * 1995-02-21 2006-05-24 株式会社半導体エネルギー研究所 絶縁ゲイト型薄膜半導体装置の作製方法
JPH08236443A (ja) * 1995-02-28 1996-09-13 Fuji Xerox Co Ltd 半導体結晶の成長方法および半導体製造装置
US5651839A (en) * 1995-10-26 1997-07-29 Queen's University At Kingston Process for engineering coherent twin and coincident site lattice grain boundaries in polycrystalline materials
DE19605245A1 (de) * 1996-02-13 1997-08-14 Siemens Ag Verfahren zur Erzeugung von Kristallisationszentren auf der Oberfläche eines Substrats
US5912090A (en) * 1996-03-08 1999-06-15 Hitachi Maxell, Ltd. Nickel-hydrogen stacked battery pack
CA2256699C (en) * 1996-05-28 2003-02-25 The Trustees Of Columbia University In The City Of New York Crystallization processing of semiconductor film regions on a substrate, and devices made therewith
US6555449B1 (en) * 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
US6830993B1 (en) * 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
KR100854834B1 (ko) 2000-10-10 2008-08-27 더 트러스티스 오브 컬럼비아 유니버시티 인 더 시티 오브 뉴욕 얇은 금속층을 가공하는 방법 및 장치
CN1200320C (zh) * 2000-11-27 2005-05-04 纽约市哥伦比亚大学托管会 用激光结晶化法加工衬底上半导体薄膜区域的方法和掩模投影系统
KR100672628B1 (ko) * 2000-12-29 2007-01-23 엘지.필립스 엘시디 주식회사 액티브 매트릭스 유기 전계발광 디스플레이 장치
US7160763B2 (en) * 2001-08-27 2007-01-09 The Trustees Of Columbia University In The City Of New York Polycrystalline TFT uniformity through microstructure mis-alignment
TWI291729B (en) * 2001-11-22 2007-12-21 Semiconductor Energy Lab A semiconductor fabricating apparatus
KR100967824B1 (ko) * 2001-11-30 2010-07-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제작방법
US7133737B2 (en) * 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
EP1329946A3 (en) 2001-12-11 2005-04-06 Sel Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including a laser crystallization step
US7214573B2 (en) * 2001-12-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes patterning sub-islands
AU2003220611A1 (en) * 2002-04-01 2003-10-20 The Trustees Of Columbia University In The City Of New York Method and system for providing a thin film
JP4879486B2 (ja) * 2002-08-19 2012-02-22 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 基板上のフィルム領域をレーザ結晶化処理してほぼ均一にするプロセス及びシステム、及びこのフィルム領域の構造
TWI360707B (en) * 2002-08-19 2012-03-21 Univ Columbia Process and system for laser crystallization proc
CN100336941C (zh) * 2002-08-19 2007-09-12 纽约市哥伦比亚大学托管会 改进衬底上薄膜区域内诸区及其边缘区内均一性以及这种薄膜区域之结构的激光结晶处理工艺与系统
CN1757093A (zh) * 2002-08-19 2006-04-05 纽约市哥伦比亚大学托管会 具有多种照射图形的单步半导体处理系统和方法
JP5164378B2 (ja) * 2003-02-19 2013-03-21 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 逐次的横方向結晶化技術を用いて結晶化させた複数の半導体薄膜フィルムを処理するシステム及びプロセス
WO2005029546A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
WO2005029548A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York System and process for providing multiple beam sequential lateral solidification
WO2005029550A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for producing crystalline thin films with a uniform crystalline orientation
US7318866B2 (en) 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
WO2005029547A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
US7164152B2 (en) * 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
TWI351713B (en) * 2003-09-16 2011-11-01 Univ Columbia Method and system for providing a single-scan, con
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
WO2005029591A1 (ja) * 2003-09-23 2005-03-31 The Furukawa Electric Co., Ltd. 一次元半導体基板、並びに、該一次元半導体基板を用いた素子、素子アレー、及びモジュール
EP1789604B1 (en) * 2004-08-04 2011-09-28 Oerlikon Solar AG, Trübbach Adhesion layer for thin film transistors
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
US20090242805A1 (en) * 2005-08-16 2009-10-01 Im James S Systems and methods for uniform sequential lateral solidification of thin films using high frequency lasers
TWI524384B (zh) * 2005-08-16 2016-03-01 紐約市哥倫比亞大學理事會 薄膜層之高產能結晶化
TW200733240A (en) * 2005-12-05 2007-09-01 Univ Columbia Systems and methods for processing a film, and thin films
TW200942935A (en) 2007-09-21 2009-10-16 Univ Columbia Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same
US8415670B2 (en) 2007-09-25 2013-04-09 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
CN103354204A (zh) * 2007-11-21 2013-10-16 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
WO2009111326A2 (en) * 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Flash light annealing for thin films
TWI452632B (zh) * 2008-02-29 2014-09-11 Univ Columbia 製造均勻一致結晶矽膜的微影方法
US8569155B2 (en) * 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
WO2010056990A1 (en) 2008-11-14 2010-05-20 The Trustees Of Columbia University In The City Of New York Systems and methods for the crystallization of thin films
US8440581B2 (en) * 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US11880060B2 (en) 2021-03-17 2024-01-23 OptoGlo, Inc. Large format solar sign

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234358A (en) * 1979-04-05 1980-11-18 Western Electric Company, Inc. Patterned epitaxial regrowth using overlapping pulsed irradiation
JPS5713777A (en) * 1980-06-30 1982-01-23 Shunpei Yamazaki Semiconductor device and manufacture thereof
US4379020A (en) * 1980-06-16 1983-04-05 Massachusetts Institute Of Technology Polycrystalline semiconductor processing
WO1982002726A1 (en) * 1981-02-04 1982-08-19 Electric Co Western Growth of structures based on group iv semiconductor materials
JPS5861622A (ja) * 1981-10-09 1983-04-12 Hitachi Ltd 単結晶薄膜の製造方法
JPS58194799A (ja) * 1982-05-07 1983-11-12 Hitachi Ltd 単結晶シリコンの製造方法
US4559102A (en) * 1983-05-09 1985-12-17 Sony Corporation Method for recrystallizing a polycrystalline, amorphous or small grain material
JPS60728A (ja) * 1983-06-16 1985-01-05 Sanyo Electric Co Ltd 分子線エピタキシヤル成長法
US4612072A (en) * 1983-06-24 1986-09-16 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for growing low defect, high purity crystalline layers utilizing lateral overgrowth of a patterned mask
US4657603A (en) * 1984-10-10 1987-04-14 Siemens Aktiengesellschaft Method for the manufacture of gallium arsenide thin film solar cells
US4918028A (en) * 1986-04-14 1990-04-17 Canon Kabushiki Kaisha Process for photo-assisted epitaxial growth using remote plasma with in-situ etching
US4843031A (en) * 1987-03-17 1989-06-27 Matsushita Electric Industrial Co., Ltd. Method of fabricating compound semiconductor laser using selective irradiation
JPH04186723A (ja) * 1990-11-20 1992-07-03 Seiko Epson Corp 結晶性半導体薄膜の製造方法
US5103284A (en) * 1991-02-08 1992-04-07 Energy Conversion Devices, Inc. Semiconductor with ordered clusters
JP3203746B2 (ja) * 1992-02-10 2001-08-27 ソニー株式会社 半導体結晶の成長方法

Also Published As

Publication number Publication date
DE4421109A1 (de) 1995-01-12
US5409867A (en) 1995-04-25
DE4421109C2 (de) 1997-05-07
TW321690B (cg-RX-API-DMAC7.html) 1997-12-01

Similar Documents

Publication Publication Date Title
JPH076960A (ja) 多結晶半導体薄膜の生成方法
US4751193A (en) Method of making SOI recrystallized layers by short spatially uniform light pulses
US5629532A (en) Diamond-like carbon optical waveguide
US5313076A (en) Thin film transistor and semiconductor device including a laser crystallized semiconductor
US5352291A (en) Method of annealing a semiconductor
Andreatta et al. Low‐temperature growth of polycrystalline Si and Ge films by ultraviolet laser photodissociation of silane and germane
US8871022B2 (en) Systems and methods for preparation of epitaxially textured thick films
US6562672B2 (en) Semiconductor material and method for forming the same and thin film transistor
US4773964A (en) Process for the production of an oriented monocrystalline silicon film with localized defects on an insulating support
JP4565062B2 (ja) 薄膜単結晶の成長方法
JPH0692280B2 (ja) 結晶薄膜の製造方法
US4678538A (en) Process for the production of an insulating support on an oriented monocrystalline silicon film with localized defects
JPH09162121A (ja) 半導体装置の製造方法
JPH09293680A (ja) 半導体結晶膜および該結晶膜の製造方法ならびに該結晶膜の製造装置
JP4016539B2 (ja) 薄膜半導体の製造装置および薄膜半導体の製造方法
JP3082164B2 (ja) レーザー処理方法及び半導体装置
US6794274B2 (en) Method for fabricating a polycrystalline silicon film
JPH01244609A (ja) 半導体薄膜製造方法
JP3208201B2 (ja) 多結晶半導体薄膜の製造方法
RU2807779C1 (ru) Способ формирования поликристаллического кремния
JP3797229B2 (ja) 薄膜半導体の製造装置
KR100333134B1 (ko) 전계와 자외선을 이용한 비정질 막의 결정화 방법
JPH02202022A (ja) 半導体装置の製造方法
JP2004006487A (ja) 結晶質薄膜の形成方法、結晶質薄膜の製造装置、薄膜トランジスタ、および光電変換素子
JP3028657B2 (ja) ＳｉＣ単結晶薄膜の製造方法