JPH0766210A - Method of forming bump - Google Patents

Method of forming bump

Info

Publication number
JPH0766210A
JPH0766210A JP23241193A JP23241193A JPH0766210A JP H0766210 A JPH0766210 A JP H0766210A JP 23241193 A JP23241193 A JP 23241193A JP 23241193 A JP23241193 A JP 23241193A JP H0766210 A JPH0766210 A JP H0766210A
Authority
JP
Japan
Prior art keywords
adhesive
bump
bumps
base
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23241193A
Other languages
Japanese (ja)
Other versions
JP3232805B2 (en
Inventor
隆 ▲吉▼川
Takashi Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP23241193A priority Critical patent/JP3232805B2/en
Publication of JPH0766210A publication Critical patent/JPH0766210A/en
Application granted granted Critical
Publication of JP3232805B2 publication Critical patent/JP3232805B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To provide a method of forming bumps, in which a screen is easily released. CONSTITUTION:Bumps 51 of conductive bonding agent 5, which increases its bonding power by heat, are attached to the upper surface of a substantially flat plate 1 coated with adhesive 2. A semiconductor chip 10, heated, is placed and pressed against the bumps so that they can be bonded. Then, the adhesive 2 is removed by organic solvent, for example, isopropyl alcohol, before the plate 1 is separated from the bumps. The adhesive 2 may also be of the type that increases its adhesiveness by heat.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体素子の電気的な
接続を行うためのバンプ電極の形成方法に関するもので
ある。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming bump electrodes for electrically connecting semiconductor elements.

【0002】[0002]

【従来の技術】リードフレームやプリント配線板などか
ら成る配線用基板とチップ状の半導体素子との電気的な
接続を行うには、金ワイヤー等を用いたワイヤーボンデ
ィングが一般的であるが、電極数の増加や狭ピッチ化に
対応するため半導体素子と導通するバンプ電極を介して
接続するものが用いられている。
2. Description of the Related Art Wire bonding using a gold wire or the like is generally used to electrically connect a wiring substrate, such as a lead frame or a printed wiring board, to a chip-shaped semiconductor element. In order to cope with the increase in the number of devices and the narrowing of pitches, a device that is connected to a semiconductor element via a bump electrode that is electrically connected is used.

【0003】従来、このようなバンプ電極を形成する方
法には、半導体素子の電極パッド上へ直接バンプを形成
する方法と、量産性の観点からセラミックス等の基台上
にいったんバンプを形成しておきこのバンプを半導体素
子へ転写する方法とが用いられている。
Conventionally, the method of forming such bump electrodes includes a method of directly forming bumps on electrode pads of a semiconductor element, and a method of forming bumps on a base such as ceramics from the viewpoint of mass productivity. A method of transferring this bump to a semiconductor element is used.

【0004】バンプを半導体素子へ転写する方法は、先
ず、セラミックス等の基台上に金属性のスクリーンを載
置し、銀ペースト等から成るバンプの材料をスクリーン
を介して基台上に印刷する。このスクリーンには予め形
成するバンプの位置に対応して開口部が設けられてお
り、この開口部を通過してバンプの材料が基台上に印刷
されることになる。
In the method of transferring bumps to a semiconductor element, first, a metallic screen is placed on a base such as ceramics, and a bump material made of silver paste or the like is printed on the base through the screen. . The screen is provided with openings corresponding to the positions of the bumps to be formed in advance, and the material of the bumps is printed on the base through the openings.

【0005】そして、基台上にバンプを形成した後に半
導体素子が形成された基板をバンプの上へ搭載しバンプ
と半導体素子の電極パッドとの接続を行う。これにより
半導体素子の電極パッド上にバンプが転写されることに
なり、このバンプを硬化させることで半導体素子と導通
するバンプ電極を形成する。
Then, after forming the bumps on the base, the substrate on which the semiconductor elements are formed is mounted on the bumps to connect the bumps to the electrode pads of the semiconductor element. As a result, the bumps are transferred onto the electrode pads of the semiconductor element, and by curing the bumps, bump electrodes that are electrically connected to the semiconductor element are formed.

【0006】[0006]

【発明が解決しようとする課題】しかしながらこのよう
なバンプ電極の形成方法には次のような問題がある。す
なわち、スクリーンを用いてバンプを基台上に印刷し、
その後にスクリーンを基台から離す際にバンプ材料の粘
性によりバンプがスクリーンとともにはがれてしまうい
わゆる版ばなれの悪化が問題となり、半導体素子へのバ
ンプの転写が不十分となってしまう。この版ばなれの悪
化はバンプの径が小さくなればなるほど顕著に現れるこ
とになり、電極数の多い場合や狭ピッチの場合に対応す
るのが困難となる。
However, such a bump electrode forming method has the following problems. That is, the bumps are printed on the base using a screen,
After that, when the screen is separated from the base, the viscosity of the bump material causes the bump to peel off together with the screen, which is a problem of deterioration of so-called plate printing. This deterioration of the print area becomes more remarkable as the diameter of the bump becomes smaller, and it becomes difficult to deal with the case where the number of electrodes is large or the pitch is narrow.

【0007】また、半導体素子に形成したバンプの高さ
が不均一であった場合にはリードフレームやプリント配
線板などの配線用基板とのコンタクトに悪影響を与える
ため、砥石で研磨したり浴槽中で超音波研削を施したり
等の処理を行い高さを均一にする必要がある。ところ
が、このような処理を行うことでバンプの破損やはがれ
を招くことになる。
Further, if the bumps formed on the semiconductor element are not uniform in height, the contact with a wiring substrate such as a lead frame or a printed wiring board will be adversely affected. Therefore, it is necessary to make the height uniform by performing ultrasonic grinding or the like. However, performing such a process causes breakage or peeling of the bump.

【0008】[0008]

【課題を解決するための手段】本発明はこのような課題
を解決するために成されたバンプ電極の形成方法であ
る。すなわち、このバンプ電極の形成方法は、先ず、略
平坦な基台の上面に仮止め用接着剤を塗布し、導電性を
備えかつ加熱により接着力が増加する樹脂から成る複数
のバンプをこの仮止め用接着剤上に接着し、次いで半導
体素子が形成された基板を加熱した状態でこの基板をバ
ンプ上に押圧し半導体素子とバンプとを接続し、その
後、仮止め用接着剤を有機溶媒を用いて溶解して基台と
バンプとを分離するものである。また、仮止め用接着剤
として加熱により接着力が増加するものを用いたバンプ
電極の形成方法でもある。
The present invention is a method of forming a bump electrode, which has been made to solve such a problem. That is, in this bump electrode forming method, first, a temporary fixing adhesive is applied to the upper surface of a substantially flat base to form a plurality of bumps made of a resin that has conductivity and whose adhesive force increases by heating. The semiconductor element and the bumps are bonded by bonding them on a fixing adhesive, and then the substrate on which the semiconductor element is formed is heated to press the substrate on the bump, and then the temporary fixing adhesive is applied with an organic solvent. It is used to dissolve and separate the base and the bump. Further, it is also a method of forming bump electrodes using an adhesive for temporary fixing whose adhesive force increases by heating.

【0009】[0009]

【作用】基台の上面に仮止め用接着剤を塗布した状態で
バンプを接着させることによりバンプと基台との接着力
が増加する。例えば、スクリーンを用いてバンプを印刷
した後スクリーンを離す際にバンプが基台と密着してい
るために版ばなれ性が向上することになる。また、バン
プ上に基板を押圧して半導体素子とバンプとを接続した
後に仮止め用接着剤を有機溶媒を用いて溶解することで
基台とバンプとが容易に離れることになり、半導体素子
側にバンプ電極が接続した状態となる。
The bonding force between the bumps and the base is increased by bonding the bumps with the temporary adhesive applied to the upper surface of the base. For example, when bumps are printed using a screen and then the screen is released, the bumps are in close contact with the base, which improves the printability. Further, by pressing the substrate onto the bumps to connect the semiconductor element and the bumps, and then dissolving the temporary fixing adhesive with an organic solvent, the base and the bumps are easily separated from each other. The bump electrode is connected to.

【0010】また、仮止め用接着剤として加熱により接
着力が増加するものを用いることで、基台上にバンプを
接続する場合にのみ仮止め用接着剤の接着力を増加させ
ることができようになる。さらに、バンプの材料として
導電性を備えた樹脂を用いることでバンプに弾性を持た
せることができ、バンプの高さが不均一であってもその
差を吸収することができる。
Also, by using a temporary fixing adhesive whose adhesive strength increases by heating, the adhesive strength of the temporary fixing adhesive can be increased only when the bumps are connected to the base. become. Furthermore, by using a resin having conductivity as the material of the bump, the bump can be made to have elasticity, and the difference can be absorbed even if the height of the bump is uneven.

【0011】[0011]

【実施例】以下に、本発明のバンプ電極の形成方法の実
施例を図に基づいて説明する。図1〜図3は本発明のバ
ンプ電極の形成方法を工程順に説明する断面図であり、
この形成方法は、基台1上にバンプ51を形成した後に
半導体素子が形成された基板10側へバンプ51を転写
するものである。
EXAMPLE An example of a method of forming a bump electrode according to the present invention will be described below with reference to the drawings. 1 to 3 are cross-sectional views illustrating a method of forming a bump electrode according to the present invention in the order of steps,
In this forming method, after the bumps 51 are formed on the base 1, the bumps 51 are transferred to the side of the substrate 10 on which the semiconductor element is formed.

【0012】先ず、図1(a)に示す仮止め用接着剤の
塗布として、セラミックス等から成る略平坦な基台1の
上面に仮止め用接着剤2を塗布する。仮止め用接着剤2
としては、例えば加熱により接着力が増加するいわゆる
熱粘性樹脂を用い、厚さ100μm程度に塗布する。
First, as the application of the temporary fixing adhesive shown in FIG. 1A, the temporary fixing adhesive 2 is applied to the upper surface of a substantially flat base 1 made of ceramics or the like. Adhesive 2 for temporary fixing
For example, a so-called thermo-viscous resin whose adhesive force increases by heating is used and is applied to a thickness of about 100 μm.

【0013】次に、図1(b)に示す溶剤の蒸発とし
て、ホットプレート3上に仮止め用接着剤2が塗布され
た基台1を搭載し、70℃〜85℃で5分〜10分間加
熱して仮止め用接着剤2に含まれている溶剤を蒸発させ
る。これにより、仮止め用接着剤2が基台1上で硬化す
ることになる。
Next, as the evaporation of the solvent shown in FIG. 1 (b), the base 1 coated with the temporary fixing adhesive 2 is mounted on the hot plate 3 and the temperature is 70 ° C. to 85 ° C. for 5 minutes to 10 minutes. It is heated for a minute to evaporate the solvent contained in the temporary fixing adhesive 2. As a result, the temporary fixing adhesive 2 is cured on the base 1.

【0014】次に、図1(c)に示す印刷として、基台
1に塗布された仮止め用接着剤2の上面にスクリーン4
を載置して、導電性接着剤5を印刷する。すなわち、ス
クリーン4には予めバンプ(図2参照)を形成したい位
置に対応して開口部41が設けられており、このスクリ
ーン4上に塗布した導電性接着剤5をスキージ6にて引
き延ばすことで開口部41から導電性接着剤5を仮止め
用接着剤2上に印刷するようにする。
Next, as the printing shown in FIG. 1C, the screen 4 is formed on the upper surface of the temporary fixing adhesive 2 applied to the base 1.
Then, the conductive adhesive 5 is printed. That is, the screen 4 is provided with an opening 41 in advance corresponding to a position where a bump (see FIG. 2) is desired to be formed, and the conductive adhesive 5 applied on the screen 4 is spread by a squeegee 6. The conductive adhesive 5 is printed on the temporary adhesive 2 through the opening 41.

【0015】この印刷を行う際、基台1をホットプレー
ト3にて加熱しておき仮止め用接着剤2を例えば100
℃〜120℃で5秒〜25秒間加熱する。この加熱によ
り仮止め用接着剤2の接着力を増加させ、開口部41か
ら印刷された導電性接着剤5が仮止め用接着剤2に密着
できるようにする。
When this printing is performed, the base 1 is heated by the hot plate 3 and the adhesive 2 for temporary fixing is set to 100 for example.
Heat at 5 ° C to 120 ° C for 5 seconds to 25 seconds. By this heating, the adhesive force of the temporary adhesive 2 is increased so that the conductive adhesive 5 printed from the opening 41 can be brought into close contact with the temporary adhesive 2.

【0016】導電性接着剤5の印刷が終了した後、図2
(a)に示すスクリーン上昇として、スクリーン4を基
台1から離すように上昇させる。このスクリーン4の表
面には、予めフッ素樹脂等のコーティング処理が施され
ており、仮止め用接着剤2とスクリーン4との接着力は
大きなものではない。すなわち、導電性接着剤5は仮止
め用接着剤2と大きな接着力で密着しているが、スクリ
ーン4はその接着力よりもはるかに小さな接着力で仮止
め用接着剤2と接着していることになる。
After the printing of the conductive adhesive 5 is completed, as shown in FIG.
As the screen raising shown in (a), the screen 4 is raised so as to be separated from the base 1. The surface of the screen 4 is previously coated with a fluororesin or the like, and the adhesive force between the temporary adhesive 2 and the screen 4 is not great. That is, the conductive adhesive 5 adheres to the temporary adhesive 2 with a large adhesive force, but the screen 4 adheres to the temporary adhesive 2 with an adhesive force much smaller than the adhesive force. It will be.

【0017】このため、スクリーン4を基台1から離す
際に導電性接着剤5すなわちバンプ51がスクリーン4
とともにはがれることはなく、基台1上にきれいにバン
プ51を残すことができる。
For this reason, when the screen 4 is separated from the base 1, the conductive adhesive 5, that is, the bumps 51 are removed from the screen 4.
At the same time, it does not peel off, and the bumps 51 can be neatly left on the base 1.

【0018】次に、図2(b)に示すバンプ接続とし
て、仮止め用接着剤2を介して基台1上に形成されたバ
ンプ51の上から図示しない半導体素子が形成された基
板10を押圧して半導体素子とバンプ51とを接続す
る。この際、基板10を例えば170℃に加熱してお
き、接続する時にバンプ51を加熱することでバンプ5
1の接着力を増加させて基板10とバンプ51とが確実
に接着するようにする。これにより、半導体素子とバン
プ51とが電気的に接続されることになる。なお、バン
プ51を接続する基板10はチップ状のものでもウエハ
状のものでもよい。
Next, as the bump connection shown in FIG. 2 (b), the substrate 10 on which a semiconductor element (not shown) is formed is bumped from the bumps 51 formed on the base 1 via the temporary bonding adhesive 2. The semiconductor element and the bump 51 are connected by pressing. At this time, the substrate 10 is heated to, for example, 170 ° C., and the bumps 51 are heated at the time of connection so that the bumps 5
The adhesive force of 1 is increased to ensure that the substrate 10 and the bump 51 are adhered. As a result, the semiconductor element and the bump 51 are electrically connected. The substrate 10 to which the bumps 51 are connected may be chip-shaped or wafer-shaped.

【0019】次に、図2(c)に示す仮止め用接着剤溶
解として、バンプ51を介して接続された基台1と基板
10とをイソプロピルアルコール7等の有機溶媒に浸漬
して仮止め用接着剤2を溶解させる。例えば、70%濃
度のイソプロピルアルコール7を用いることで仮止め用
接着剤2を溶解させ、バンプ51と基台1とを分離す
る。なお、有機溶媒はイソプロピルアルコール7に限定
されることはなく、仮止め用接着剤2のみを溶解できる
ものであればよい。
Next, as a temporary fixing adhesive solution shown in FIG. 2C, the base 1 and the substrate 10 connected via the bumps 51 are immersed in an organic solvent such as isopropyl alcohol 7 to temporarily fix them. Adhesive 2 for adhesive is dissolved. For example, the adhesive 2 for temporary fixing is dissolved by using isopropyl alcohol 7 having a concentration of 70%, and the bump 51 and the base 1 are separated. The organic solvent is not limited to isopropyl alcohol 7 as long as it can dissolve only the adhesive 2 for temporary fixing.

【0020】この分離により、図3に示すような基板1
0にバンプ51のみが残った状態となり、基板10に形
成された図示しない半導体素子と導通するバンプ電極5
1aが形成される。
Due to this separation, the substrate 1 as shown in FIG.
The bump electrode 5 is in a state in which only the bump 51 remains at 0, and is electrically connected to a semiconductor element (not shown) formed on the substrate 10.
1a is formed.

【0021】図4は、このようなバンプ電極51aが形
成された基板10のボンディングを説明する断面図であ
る。すなわち、リードフレーム9等から成る配線用基板
にバンプ電極51aが接触するよう基板10を搭載し、
この基板10の上からボンディングツール8を用いて例
えば250℃〜300℃に加熱しながら押圧する。バン
プ電極51aは加熱により接着力が増加しており、リー
ドフレーム9の所定の接続位置と位置合わせされた状態
で接着することになる。これにより、バンプ電極51a
を介して基板10に形成された図示しない半導体素子と
リードフレーム9とが電気的に接続されることになる。
FIG. 4 is a sectional view for explaining the bonding of the substrate 10 having the bump electrodes 51a formed thereon. That is, the substrate 10 is mounted so that the bump electrodes 51a are in contact with the wiring substrate including the lead frame 9 and the like,
The substrate 10 is pressed while being heated to, for example, 250 ° C. to 300 ° C. by using the bonding tool 8. The adhesive force of the bump electrode 51a is increased by heating, and the bump electrode 51a is bonded in a state of being aligned with a predetermined connection position of the lead frame 9. Thereby, the bump electrode 51a
The semiconductor element (not shown) formed on the substrate 10 and the lead frame 9 are electrically connected via the.

【0022】また、本発明のバンプ電極51aは導電性
接着剤5から成るものであるため所定の弾性を有してお
り、形成されたバンプ電極51aの高さが不均一であっ
てもボンディングツール8による押圧力で多少縮んで全
てのバンプ電極51aがリードフレーム9と接触できる
ようになる。さらに、バンプ電極51aの弾性によりリ
ードフレーム9から成る配線用基板の反りも吸収できる
ためボンディング後の応力緩和を図ることもできる。
Further, since the bump electrode 51a of the present invention is made of the conductive adhesive 5, it has a predetermined elasticity, and even if the height of the formed bump electrode 51a is not uniform, the bonding tool is formed. By the pressing force of 8, the bump electrodes 51a are slightly contracted so that all the bump electrodes 51a can come into contact with the lead frame 9. Further, the elasticity of the bump electrode 51a can absorb the warp of the wiring substrate formed of the lead frame 9, so that the stress after bonding can be relaxed.

【0023】なお、本実施例において説明した仮止め用
接着剤2は熱粘性接着剤に限定されるものではなく、バ
ンプ51を基台1に仮止めでき、かつバンプ51を基板
10に接続した後に容易にはがせるものであればよい。
The temporary fixing adhesive 2 described in this embodiment is not limited to the thermo-viscous adhesive, and the bumps 51 can be temporarily fixed to the base 1 and the bumps 51 are connected to the substrate 10. Anything that can be easily peeled off later may be used.

【0024】[0024]

【発明の効果】以上説明したように、本発明のバンプ電
極の形成方法によれば次のような効果がある。すなわ
ち、スクリーンを用いてバンプを基台上に印刷した場合
であってもスクリーンとともにバンプがはがれてしまう
ことがなく、半導体素子が形成された基板へのバンプの
転写を確実に行うことができる。このため、半導体素子
の電極数が多い場合や狭ピッチの場合であっても確実に
バンプ電極を形成できるようになる。
As described above, the bump electrode forming method of the present invention has the following effects. That is, even when the bumps are printed on the base using the screen, the bumps are not peeled off together with the screen, and the bumps can be reliably transferred to the substrate on which the semiconductor element is formed. Therefore, bump electrodes can be reliably formed even if the number of electrodes of the semiconductor element is large or the pitch is narrow.

【0025】また、バンプ電極の高さが不均一であって
も確実な電気的接続を得ることができるため、信頼性の
高い半導体装置を製造することが可能となる。
Further, since reliable electrical connection can be obtained even if the bump electrodes have uneven heights, it is possible to manufacture a highly reliable semiconductor device.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のバンプ電極の形成方法を説明する断面
図(その1)で、(a)は仮止め用接着剤塗布、(b)
は溶剤の蒸発、(c)は印刷を示すものである。
FIG. 1 is a cross-sectional view (No. 1) illustrating a method for forming bump electrodes according to the present invention, in which (a) is an adhesive application for temporary fixing, and (b) is a sectional view.
Indicates evaporation of the solvent, and (c) indicates printing.

【図2】本発明のバンプ電極の形成方法を説明する断面
図(その2)、(a)はスクリーン上昇、(b)はバン
プ接続、(c)は仮止め用接着剤溶解を示すものであ
る。
FIG. 2 is a cross-sectional view (part 2) for explaining the method for forming bump electrodes of the present invention, (a) showing a screen rise, (b) showing bump connection, and (c) showing dissolution of a temporary fixing adhesive. is there.

【図3】本発明のバンプ電極の形成方法を説明する断面
図(その3)である。
FIG. 3 is a sectional view (No. 3) for explaining the bump electrode forming method of the invention.

【図4】ボンディングを説明する断面図である。FIG. 4 is a cross-sectional view illustrating bonding.

【符号の説明】[Explanation of symbols]

1 基台 2 仮止め用接着剤 3 ホットプレート 4 スクリーン 5 導電性接着剤 10 基板 51 バンプ 51a バンプ電極 1 Base 2 Temporary Fixing Adhesive 3 Hot Plate 4 Screen 5 Conductive Adhesive 10 Substrate 51 Bump 51a Bump Electrode

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 半導体素子が形成された基板に該半導体
素子と導通するバンプ電極を形成する方法において、 略平坦な基台の上面に仮止め用接着剤を塗布する工程
と、 導電性を備えかつ加熱により接着力が増加する樹脂から
成る複数のバンプを前記仮止め用接着剤上に接着する工
程と、 前記半導体素子が形成された基板を加熱した状態で該基
板を前記バンプ上に押圧し該半導体素子と該バンプとを
接続する工程と、 前記仮止め用接着剤を有機溶媒を用いて溶解し前記基台
と前記バンプとを分離する工程とから成ることを特徴と
するバンプ電極の形成方法。
1. A method of forming a bump electrode electrically connected to a semiconductor element on a substrate on which a semiconductor element is formed, the method comprising: applying a temporary fixing adhesive to the upper surface of a substantially flat base; And a step of adhering a plurality of bumps made of a resin whose adhesive strength increases by heating on the temporary fixing adhesive, and pressing the substrate on the bump with the substrate on which the semiconductor element is formed being heated. Forming a bump electrode, which comprises a step of connecting the semiconductor element and the bump, and a step of dissolving the adhesive for temporary fixing with an organic solvent to separate the base and the bump. Method.
【請求項2】 前記仮止め用接着剤は加熱により接着力
が増加するものであることを特徴とする請求項1記載の
バンプ電極の形成方法。
2. The bump electrode forming method according to claim 1, wherein the adhesive for temporary fixing has an adhesive strength increased by heating.
JP23241193A 1993-08-24 1993-08-24 Method of forming bump electrode Expired - Fee Related JP3232805B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23241193A JP3232805B2 (en) 1993-08-24 1993-08-24 Method of forming bump electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23241193A JP3232805B2 (en) 1993-08-24 1993-08-24 Method of forming bump electrode

Publications (2)

Publication Number Publication Date
JPH0766210A true JPH0766210A (en) 1995-03-10
JP3232805B2 JP3232805B2 (en) 2001-11-26

Family

ID=16938834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23241193A Expired - Fee Related JP3232805B2 (en) 1993-08-24 1993-08-24 Method of forming bump electrode

Country Status (1)

Country Link
JP (1) JP3232805B2 (en)

Also Published As

Publication number Publication date
JP3232805B2 (en) 2001-11-26

Similar Documents

Publication Publication Date Title
JP2662190B2 (en) Electronic element assembly and rework method
JP3326382B2 (en) Method for manufacturing semiconductor device
KR100344912B1 (en) A structure of mounting a semiconductor element onto a substrate and a mounting method thereof
JP3451987B2 (en) Functional element, substrate for mounting functional element, and method of connecting them
JPH06168982A (en) Flip chip packaging structure
JP3509642B2 (en) Semiconductor device mounting method and mounting structure
JP2002026071A (en) Semiconductor device and its manufacturing method, circuit board, and electronic equipment
JP3163751B2 (en) Method for manufacturing semiconductor device
JP3232805B2 (en) Method of forming bump electrode
JP3698223B2 (en) Manufacturing method of semiconductor device
JPS62132331A (en) Manufacture of semiconductor device
JP3264072B2 (en) Electronic component and method of manufacturing the same
JP2000068321A (en) Semiconductor device and manufacture thereof
JPH084101B2 (en) Method for manufacturing semiconductor device
JP2001135662A (en) Semiconductor element and method for manufacturing semiconductor device
JPH012331A (en) Manufacturing method of semiconductor device
JP2000174066A (en) Method of mounting semiconductor device
JP2765139B2 (en) Method for manufacturing semiconductor device
JPH08102464A (en) Bump electrode structure and its forming method, and connection structure using bump electrode and its connection method
JP2523641B2 (en) Semiconductor device
JP3596512B2 (en) Manufacturing method of electronic components
JP2001358252A (en) Semiconductor device
JPH0677282A (en) Manufacture of semiconductor device
JPS6297340A (en) Electrical connecting method for ic chip
KR100271680B1 (en) Manufacturing Method of Semiconductor Device

Legal Events

Date Code Title Description
FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080921

Year of fee payment: 7

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090921

Year of fee payment: 8

LAPS Cancellation because of no payment of annual fees