JPH0747876Y2 - 薄膜トラジスタ - Google Patents

薄膜トラジスタ

Info

Publication number
JPH0747876Y2
JPH0747876Y2 JP1988135460U JP13546088U JPH0747876Y2 JP H0747876 Y2 JPH0747876 Y2 JP H0747876Y2 JP 1988135460 U JP1988135460 U JP 1988135460U JP 13546088 U JP13546088 U JP 13546088U JP H0747876 Y2 JPH0747876 Y2 JP H0747876Y2
Authority
JP
Japan
Prior art keywords
semiconductor layer
film
thin film
film transistor
amorphous semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1988135460U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0256462U (US20100223739A1-20100909-C00005.png
Inventor
直幸 杉浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP1988135460U priority Critical patent/JPH0747876Y2/ja
Publication of JPH0256462U publication Critical patent/JPH0256462U/ja
Application granted granted Critical
Publication of JPH0747876Y2 publication Critical patent/JPH0747876Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
JP1988135460U 1988-10-19 1988-10-19 薄膜トラジスタ Expired - Lifetime JPH0747876Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988135460U JPH0747876Y2 (ja) 1988-10-19 1988-10-19 薄膜トラジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988135460U JPH0747876Y2 (ja) 1988-10-19 1988-10-19 薄膜トラジスタ

Publications (2)

Publication Number Publication Date
JPH0256462U JPH0256462U (US20100223739A1-20100909-C00005.png) 1990-04-24
JPH0747876Y2 true JPH0747876Y2 (ja) 1995-11-01

Family

ID=31395107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988135460U Expired - Lifetime JPH0747876Y2 (ja) 1988-10-19 1988-10-19 薄膜トラジスタ

Country Status (1)

Country Link
JP (1) JPH0747876Y2 (US20100223739A1-20100909-C00005.png)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI481029B (zh) 2007-12-03 2015-04-11 半導體能源研究所股份有限公司 半導體裝置
US7812348B2 (en) * 2008-02-29 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor and display device
US7968880B2 (en) * 2008-03-01 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device
US8436350B2 (en) * 2009-01-30 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using an oxide semiconductor with a plurality of metal clusters
CN104934444B (zh) * 2015-05-11 2018-01-02 深圳市华星光电技术有限公司 共平面型氧化物半导体tft基板结构及其制作方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235569A (ja) * 1985-08-09 1987-02-16 Agency Of Ind Science & Technol Ｍｉｓ型トランジスタ及びその製造方法
JPS63258072A (ja) * 1987-04-15 1988-10-25 Nec Corp 電界効果トランジスタ

Also Published As

Publication number Publication date
JPH0256462U (US20100223739A1-20100909-C00005.png) 1990-04-24

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