JPH0729836U - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0729836U
JPH0729836U JP067009U JP6700993U JPH0729836U JP H0729836 U JPH0729836 U JP H0729836U JP 067009 U JP067009 U JP 067009U JP 6700993 U JP6700993 U JP 6700993U JP H0729836 U JPH0729836 U JP H0729836U
Authority
JP
Japan
Prior art keywords
lead
main surface
post portion
thin
support plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP067009U
Other languages
Japanese (ja)
Inventor
和美 高畠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP067009U priority Critical patent/JPH0729836U/en
Publication of JPH0729836U publication Critical patent/JPH0729836U/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/787—Means for aligning
    • H01L2224/78703—Mechanical holding means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

(57)【要約】 【目的】 リード細線を外部リードに十分な機械的強度
で接続された半導体装置を提供すること。 【構成】 本考案の半導体装置は、外部リード２が肉薄
ポスト部２ａと肉厚本体部２ｂを有する。本体部２ｂの
他方の主面のポスト部２ａ側には凹部２ｃが形成されて
いる。ポスト部２ａの一方の主面にはリード細線４が接
続されている。 (57) [Abstract] [Purpose] To provide a semiconductor device in which a thin lead wire is connected to an external lead with sufficient mechanical strength. According to the semiconductor device of the present invention, the external lead 2 has a thin post portion 2a and a thick main body portion 2b. A recess 2c is formed on the other main surface of the main body 2b on the side of the post 2a. The thin lead wire 4 is connected to one main surface of the post portion 2a.

Description

【考案の詳細な説明】[Detailed description of the device]

【０００１】[0001]

【産業上の利用分野】[Industrial applications]

本考案は、外部リードの肉薄ポスト部にリード細線が接続された構造の半導体 装置に関するものである。 The present invention relates to a semiconductor device having a structure in which a thin lead wire is connected to a thin post portion of an external lead.

【０００２】[0002]

【従来の技術】[Prior art]

支持板と、支持板の近傍に配置された外部リードとを有し、外部リードの支持 板近傍（ポスト部）にリード細線が接続された半導体装置は公知である。 A semiconductor device having a support plate and external leads arranged in the vicinity of the support plate and having lead wires connected to the vicinity of the support plate (post portion) of the external leads is known.

【０００３】[0003]

【考案が解決しようとする課題】[Problems to be solved by the device]

ところで、ポスト部の上面（ワイヤボンディング領域）は、リード細線の接続 強度が十分に得られるように平滑である必要がある。このため、ポスト部は予め 上面をハンマでプレスして平坦化処理を施しておく。ところが、このような機械 的加工を施すと、リード細線のワイヤボンディング時にポスト部が載置台から浮 き上がってしまい、ワイヤボンディングの押圧力及び超音波振動がリード細線に 十分に加わらず、リード細線を外部リードに十分な接続強度で固着できないとい う問題が生じた。 By the way, the upper surface (wire bonding region) of the post portion needs to be smooth so that the connection strength of the lead thin wire can be sufficiently obtained. For this reason, the post portion is preliminarily flattened by pressing the upper surface with a hammer. However, when such mechanical processing is performed, the post part floats up from the mounting table during wire bonding of the fine lead wire, and the wire bonding pressing force and ultrasonic vibration are not sufficiently applied to the fine lead wire. There was a problem that could not be fixed to the external lead with sufficient connection strength.

【０００４】 そこで本考案はリード細線を外部リードのポスト部に十分な接続強度で固着で きる半導体装置を提供することを目的とする。Therefore, an object of the present invention is to provide a semiconductor device capable of fixing a thin lead wire to a post portion of an external lead with sufficient connection strength.

【０００５】[0005]

【課題を解決するための手段】[Means for Solving the Problems]

本考案による半導体装置では、支持板とこの近傍に配置された外部リードとを 備え、外部リードは支持板側から順次肉薄のポスト部と肉厚の本体部とを有して おり、ポスト部の一方の主面は本体部の一方の主面よりも他方の主面側に偏位し ており、本体部の他方の主面のポスト部側には外部リードの幅方向の全体に渡っ て延在する凹部が形成されており、ポスト部の一方の主面にリード細線が接続さ れている。 A semiconductor device according to the present invention comprises a support plate and external leads arranged in the vicinity of the support plate, and the external lead has a thin post portion and a thick main body portion in order from the support plate side. One main surface is deviated to the other main surface side from one main surface of the main body, and the main surface of the other main surface extends to the post part side over the entire width of the external lead. The existing concave portion is formed, and the lead thin wire is connected to one main surface of the post portion.

【０００６】[0006]

【考案の作用および効果】[Function and effect of device]

外部リードの他方の主面に形成された凹部は、ポスト部の偏位・屈曲を容易に する。このため、プレス成形時にポスト部が本体部から屈曲してもワイヤボンデ ィング時にポスト部を押え具で押圧することでそれを容易に矯正できる。 The recess formed on the other main surface of the outer lead facilitates the deviation and bending of the post portion. Therefore, even if the post portion bends from the main body portion during press molding, it can be easily corrected by pressing the post portion with the retainer during wire bonding.

【０００７】 この結果、リード細線にワイヤボンディング時の押圧力及び超音波振動を十分 に加えることができ、リード細線が外部リードのポスト部に十分な接続強度で固 着された半導体装置が実現される。As a result, a pressing force and ultrasonic vibration at the time of wire bonding can be sufficiently applied to the fine lead wire, and a semiconductor device in which the fine lead wire is fixed to the post portion of the external lead with sufficient connection strength is realized. It

【０００８】[0008]

【実施例】【Example】

以下、本考案の実施例を図１及び図２を参照して説明する。 An embodiment of the present invention will be described below with reference to FIGS.

【０００９】 図１は、本考案の一実施例に係る半導体装置を示す断面図である。図示のよう に、支持板１、外部リード２、半導体チップ３、リード細線４及び樹脂封止体５ によって構成されている。支持板１と外部リード２は、帯状の金属板を打ち抜き 加工して形成されたリードフレームから成る。半導体チップ３は接着剤６によっ て支持板１の一方の主面に固着されており、半導体チップ３の電極（図示せず） と外部リード２とはリード細線４によって電気的に接続されている。樹脂封止体 ５は周知のトランスファモールドによって形成されており、外部リード２の一端 側と支持板１、半導体チップ３及びリード細線４を被覆する。FIG. 1 is a sectional view showing a semiconductor device according to an embodiment of the present invention. As shown in the figure, the support plate 1, the external leads 2, the semiconductor chip 3, the lead thin wires 4 and the resin sealing body 5 are used. The support plate 1 and the external leads 2 are lead frames formed by stamping a band-shaped metal plate. The semiconductor chip 3 is fixed to one main surface of the support plate 1 with an adhesive 6, and the electrodes (not shown) of the semiconductor chip 3 and the external leads 2 are electrically connected by the fine lead wires 4. There is. The resin sealing body 5 is formed by a well-known transfer mold, and covers the one end side of the external lead 2, the support plate 1, the semiconductor chip 3, and the lead thin wire 4.

【００１０】 外部リード２は、支持板１側から順番に肉薄のポスト部２ａと肉厚の本体部２ ｂを有している。ポスト部２ａは、上述のようにリード細線４の接続領域（ワイ ヤボンディング領域）の平滑性を向上するために平坦な金型で外部リード２の一 方の主面を部分的にプレスして形成されたものである。このため、ポスト部２ａ の一方の主面は本体部２ｂの一方の主面よりも外部リード２の他方の主面側に偏 位している。なお、ポスト部２ａは、図２に示すようにワイヤボンディング時に 押え具７を当接できるように従来よりも長さＬを増大している。The external lead 2 has a thin post portion 2 a and a thick main body portion 2 b in order from the support plate 1 side. As described above, the post portion 2a is formed by partially pressing one main surface of the outer lead 2 with a flat die in order to improve the smoothness of the connection area (wire bonding area) of the lead thin wire 4. It was formed. For this reason, one main surface of the post portion 2a is deviated to the other main surface side of the external lead 2 rather than one main surface of the main body portion 2b. As shown in FIG. 2, the post portion 2a has a length L larger than that of the conventional one so that the holding member 7 can be contacted during wire bonding.

【００１１】 外部リード２の他方の主面には凹部２ｃが形成されている。凹部２ｃは、本体 部２ｂのポスト部２ａ側近傍に形成されており、外部リード２の幅方向の全体に 渡って延在している。本実施例では凹部２ｃの一方の側壁部がポスト部２ａと本 体部２ｂの境界部分に位置するようにしているが、ポスト部２ａ又は本体部２ｂ に位置するようにしてもよい。但し、本考案の作用・効果が十分に発揮されるよ うに凹部２ｃはポスト部２ａと本体部２ｂの境界に達するようにして本体部２ｂ に形成するのが望ましい。なお、凹部２ｃはＶ溝にすることもできる。A recess 2 c is formed on the other main surface of the outer lead 2. The concave portion 2c is formed in the vicinity of the post portion 2a side of the main body portion 2b and extends over the entire width of the external lead 2 in the width direction. In this embodiment, one side wall of the recess 2c is located at the boundary between the post 2a and the main body 2b, but it may be located at the post 2a or the main body 2b. However, it is preferable that the recess 2c is formed in the main body 2b so as to reach the boundary between the post 2a and the main body 2b so that the action and effect of the present invention can be sufficiently exerted. The recess 2c may be a V groove.

【００１２】 リード細線４はポスト部２ａの一方の主面に周知のワイヤボンディング法によ って押圧接続されている。 図２は、リード細線４をポスト部２ａに接続するところを示す。図示のように 、支持板１及び外部リード２を載置台８に配置し、押え具７によって外部リード ２を載置台８に押圧して固定する。凹部２ｃが形成されているため、ポスト部２ ａを押え具７で押圧すると外部リード２の屈曲が矯正され、外部リード２の他方 の主面は凹部２ｃを除いたほぼ全体が載置台８の上面に密着する。この結果、キ ャピラリ９の超音波振動及び押圧力をリード細線４に十分に伝えることができ、 リード細線４をポスト部２ａに強固に接続することができる。The thin lead wire 4 is pressure-connected to one main surface of the post portion 2a by a well-known wire bonding method. FIG. 2 shows that the lead wire 4 is connected to the post portion 2a. As shown in the drawing, the support plate 1 and the external leads 2 are arranged on the mounting table 8, and the external leads 2 are pressed and fixed to the mounting table 8 by the holding tool 7. Since the concave portion 2c is formed, when the post portion 2a is pressed by the retainer 7, the bending of the outer lead 2 is corrected, and the other main surface of the outer lead 2 is almost entirely of the mounting table 8 except the concave portion 2c. Stick to the top surface. As a result, the ultrasonic vibration and pressing force of the capillary 9 can be sufficiently transmitted to the lead thin wire 4, and the lead thin wire 4 can be firmly connected to the post portion 2a.

【図面の簡単な説明】[Brief description of drawings]

【図１】実施例に係る半導体装置の断面図FIG. 1 is a cross-sectional view of a semiconductor device according to an example.

【図２】ポスト部にリード細線を接続する工程を示す断
面図。FIG. 2 is a cross-sectional view showing a step of connecting a lead thin wire to a post portion.

【符号の説明】[Explanation of symbols]

１ 支持板 ２ 外部リード ３ 半導体チップ ４ リード細線 ５ 樹脂封止体 ６ 接着剤 ７ 押え具 ８ 載置台 ９ キャピラリ 1 Support Plate 2 External Lead 3 Semiconductor Chip 4 Lead Wire 5 Resin Encapsulation 6 Adhesive 7 Presser 8 Mounting Table 9 Capillary

Claims (2)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項１】 支持板と、該支持板の近傍に配置された
外部リードとを備え、前記外部リードは前記支持板側か
ら順次肉薄のポスト部と肉厚の本体部とを有しており、
前記ポスト部の一方の主面は前記本体部の一方の主面よ
りも他方の主面側に偏位しており、前記本体部の他方の
主面の前記ポスト部側には前記外部リードの幅方向の全
体に渡って延在する凹部が形成されており、前記ポスト
部の一方の主面にリード細線が接続されている半導体装
置。1. A support plate and an external lead arranged in the vicinity of the support plate, wherein the external lead has a thin post portion and a thick main body portion sequentially from the support plate side. ,
One main surface of the post portion is deviated to the other main surface side from one main surface of the main body portion, and the external lead of the external lead is provided on the other main surface of the main body portion on the post portion side. A semiconductor device in which a recess extending over the entire width direction is formed, and a thin lead wire is connected to one main surface of the post portion. 【請求項２】 前記ポスト部の一方の主面は前記リード
細線が接続される領域と押え具を当接させる領域とを有
している請求項１記載の半導体装置。2. The semiconductor device according to claim 1, wherein one main surface of the post portion has a region to which the lead thin wire is connected and a region to which the retainer is brought into contact.
JP067009U 1993-11-10 1993-11-10 Semiconductor device Pending JPH0729836U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP067009U JPH0729836U (en) 1993-11-10 1993-11-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP067009U JPH0729836U (en) 1993-11-10 1993-11-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH0729836U true JPH0729836U (en) 1995-06-02

Family

ID=13332501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP067009U Pending JPH0729836U (en) 1993-11-10 1993-11-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0729836U (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62195164A (en) * 1986-02-21 1987-08-27 Shinko Electric Ind Co Ltd Lead frame
JPH01231334A (en) * 1988-03-11 1989-09-14 Oki Electric Ind Co Ltd Wire bonding method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62195164A (en) * 1986-02-21 1987-08-27 Shinko Electric Ind Co Ltd Lead frame
JPH01231334A (en) * 1988-03-11 1989-09-14 Oki Electric Ind Co Ltd Wire bonding method

Similar Documents

Publication Publication Date Title
JP2540478B2 (en) Heat sink for semiconductor device and manufacturing method thereof
JP3259377B2 (en) Semiconductor device
JPH0729836U (en) Semiconductor device
JPH105895A (en) Production of metal supporting plate of resin seal type electronic part
KR0161548B1 (en) Wire bonding method
JP2000332179A (en) Structure for securing terminal
JP3209121B2 (en) Pressure sensor
JPH03228339A (en) Bonding tool
JPH0322467A (en) Molding die for lead of ic
KR0127359Y1 (en) Semiconductor manufacture lead frame
JPS63107152A (en) Resin packaged type electronic paris
JP2582534B2 (en) Method for manufacturing semiconductor device
JPH11260972A (en) Thin semiconductor device
JP3833832B2 (en) Manufacturing method of resin-encapsulated semiconductor device
JPH07142529A (en) Presser of lead frame for electronic component and pressing method using this presser
JP2006049682A (en) Semiconductor device and method for manufacturing the same
JPH10107198A (en) Ic sealing package
JPS61194861A (en) Resin sealed type semiconductor device
JP3049040B1 (en) Method for manufacturing semiconductor device
JPH0595074A (en) Semiconductor device
KR19980078729A (en) Leadframe for Package
JP2520612Y2 (en) Resin-sealed semiconductor device
KR0152934B1 (en) Semiconductor package
JPS61174753A (en) Resin sealed chip carrier
JPH0579946U (en) Semiconductor device