JPH07291785A - 半導体単結晶製造装置および半導体単結晶製造方法 - Google Patents
半導体単結晶製造装置および半導体単結晶製造方法Info
- Publication number
- JPH07291785A JPH07291785A JP10793894A JP10793894A JPH07291785A JP H07291785 A JPH07291785 A JP H07291785A JP 10793894 A JP10793894 A JP 10793894A JP 10793894 A JP10793894 A JP 10793894A JP H07291785 A JPH07291785 A JP H07291785A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- single crystal
- material supply
- semiconductor single
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 154
- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 239000002994 raw material Substances 0.000 claims abstract description 163
- 239000000155 melt Substances 0.000 claims abstract description 55
- 239000011261 inert gas Substances 0.000 claims description 31
- 238000002844 melting Methods 0.000 claims description 15
- 230000008018 melting Effects 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 8
- 239000012808 vapor phase Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000005191 phase separation Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 16
- 239000007795 chemical reaction product Substances 0.000 abstract description 10
- 238000011144 upstream manufacturing Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 10
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000011109 contamination Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10793894A JPH07291785A (ja) | 1994-04-22 | 1994-04-22 | 半導体単結晶製造装置および半導体単結晶製造方法 |
| TW085206387U TW307416U (en) | 1994-04-22 | 1995-09-12 | Apparatus for producing semiconductor single crystal and production of semiconductor single crystal |
| TW84109543A TW287290B (en, 2012) | 1994-04-22 | 1995-09-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10793894A JPH07291785A (ja) | 1994-04-22 | 1994-04-22 | 半導体単結晶製造装置および半導体単結晶製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07291785A true JPH07291785A (ja) | 1995-11-07 |
Family
ID=14471860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10793894A Pending JPH07291785A (ja) | 1994-04-22 | 1994-04-22 | 半導体単結晶製造装置および半導体単結晶製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH07291785A (en, 2012) |
| TW (2) | TW287290B (en, 2012) |
-
1994
- 1994-04-22 JP JP10793894A patent/JPH07291785A/ja active Pending
-
1995
- 1995-09-12 TW TW84109543A patent/TW287290B/zh active
- 1995-09-12 TW TW085206387U patent/TW307416U/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW307416U (en) | 1997-06-01 |
| TW287290B (en, 2012) | 1996-10-01 |
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