JPH07283248A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE:To obtain a semiconductor device enhanced in reliability by protecting a sealing member against cracking. CONSTITUTION:A semiconductor device is provided with a semiconductor element 1, a die pad 2, a die bonding material 14 used for fixing the element 1 to the die pad 2 and having a linear expansion coefficient 10.5 to 30X10<-6>1/ deg.C, and a molding resin 6 used for sealing in the semiconductor element 1 and the die pad 2 and having a linear expansion coefficient 15 to 20X10<-6>1/ deg.C.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a semiconductor element and a die pad or an internal lead are fixed by a fixing member, and a method of manufacturing the semiconductor device.

[0002]

2. Description of the Related Art FIG. 7 is a sectional view showing the structure of a conventional semiconductor device. In the figure, reference numeral 1 denotes a semiconductor element made of, for example, silicon. Reference numeral 2 is a die pad for mounting the semiconductor element 1, which is made of, for example, 42 alloy or copper alloy.
Reference numeral 3 denotes a die bonding material as a fixing member for fixing the semiconductor element 1 and the die pad 2, which is composed of, for example, an epoxy resin as a main component and a silver powder mixed as a filler. Depending on the integrated circuit (not shown) of the semiconductor element 1, it may be necessary to ground the die pad 2, and in such a case, the semiconductor element 1 and the die pad 2 are electrically connected to each other. In addition, the die bond material 3 is made to have conductivity by mixing about 80 wt% of silver powder with epoxy resin.

Reference numeral 4 is a wire connecting the semiconductor element 1 and a lead terminal described later, and is made of, for example, gold or aluminum. Reference numeral 10 is an electrode for connecting the wire 4 on the semiconductor element 1, and 5 is a lead terminal for transmitting an electric signal of the semiconductor element 1 to the outside through the wire 4, and is made of, for example, 42 alloy or copper alloy. . 6 is a mold resin as a sealing member for enclosing a part of the semiconductor element 1, the die pad 2, the die bond material 3, the wire 4 and the lead terminal 5 and protecting them from various external conditions.
It consists of 70% silica. FIG. 9 shows respective values of the linear expansion coefficient and the longitudinal elastic coefficient of general materials used in the semiconductor device formed as described above.

Next, a method of manufacturing the semiconductor device having the above structure will be described with reference to FIGS.
First, the die bonding material 3a is applied from the nozzle 7a at the tip of the syringe 7 to the die pad 2 using, for example, a dispensing method (in addition, there are methods such as stamping and screen printing).
A fixed amount is discharged on the upper side (FIG. 8A). Next, the semiconductor device 1
Is placed at a predetermined position on the die-bonding material 3a of the die pad 2 and the semiconductor element 1 is collected by the collet 8 at, for example, 50 g / m.
The die pad 2 and the semiconductor element 1 are fixed to each other with the die bond material 3 while being pressurized at about m ² (FIG. 8B).

Next, the wire 4 is connected to the electrode 1 by the capillary 9.
0 and the lead terminal 5 are crimped (see FIG. 8).
(C)). Next, as shown in FIG. 7, a part of the semiconductor element 1, the die pad 2, the wire 4 and the lead terminal 5 is sealed with a mold resin 6 to form a desired shape, and for example soldered to a printed circuit board or the like. Implemented by. In the operation of the semiconductor device formed as described above, an electric signal is externally applied to the lead terminal 5 and the semiconductor element 1 is connected via the wire 4.
This electrical signal is transmitted to the upper integrated circuit (not shown). Then, after a predetermined operation (calculation or the like) is performed in the integrated circuit, an electric signal is taken out from the lead terminal 5 to the outside again via the wire 4.

Next, a semiconductor device different from the above conventional example will be described. FIG. 10 is a sectional view showing the structure of a conventional semiconductor device. In the figure, the same parts as those in the above-mentioned conventional case are designated by the same reference numerals and the description thereof will be omitted. Reference numeral 5a is an internal lead of the lead terminal 5 which is sealed in the mold resin 6, 5b is an external lead of the lead terminal 5 which is not sealed in the mold resin 6, and 11 is the semiconductor element 1 and the internal lead 5
It is an adhesive tape made of, for example, a double-sided tape as a fixing member for fixing a.

Next, a method of manufacturing the semiconductor device configured as described above will be described with reference to FIGS. First, the semiconductor element 1 is placed on the tray 12, and the adhesive tape 1 is placed at a desired position on the semiconductor element 1 in consideration of the arrangement of the electrodes 10 and the internal leads 5a of the semiconductor element 1.
1 is bonded (FIGS. 11 and 12 (a)). Next, the internal lead 5a is placed at a predetermined location on the adhesive tape 11 (FIG. 12B), and the tool 13 presses the internal lead 5a from above the semiconductor chip 1 and the internal lead 5a with the adhesive tape 11. Is fixed (FIG. 12 (c)).

Next, the wire 4 is connected to the electrode 10 and the inner lead 5.
It is connected to a (FIG. 12 (d)). Next, as shown in FIG. 10, the semiconductor element 1, the wires 4 and the internal leads 5a are sealed with a molding resin 6 to form a desired shape, and mounted on a printed circuit board or the like by soldering or the like.

[0009]

As described above, in the conventional semiconductor device, the semiconductor element 1 and the die pad 2 are fixed by the die bond material 3 having a linear expansion coefficient different from that of the mold resin 6 as shown in FIG. Alternatively, since the semiconductor element 1 and the inner leads 5a are fixed by the adhesive tape 11, the heat generated when the semiconductor device is mounted on the printed circuit board by soldering and the die resin is die-bonded to the mold resin 6. Thermal stress is generated between the material 3 and the adhesive tape 11, and the die bond material 3 and the adhesive tape 11 absorb a lot of water vapor that enters from the outside of the semiconductor device during mounting, and the semiconductor element 1 and the die bond material 3 and the adhesive tape 11 are bonded. Tape 11
However, there is a problem that the mold resin 6 is cracked and the wire 4 is cut and the reliability of the semiconductor device is deteriorated.

The present invention has been made to solve the above problems, and provides a semiconductor device and a method for manufacturing the semiconductor device, which prevent the occurrence of cracks in the sealing member and improve reliability. With the goal.

[0011]

In the semiconductor device according to the first aspect of the present invention, the linear expansion coefficient of the fixing member for fixing the semiconductor element and the die pad is 0.7 of the linear expansion coefficient of the sealing member.
~ 1.5 times.

Further, in the semiconductor device according to claim 2 of the present invention, the linear expansion coefficient of the fixing member for fixing the semiconductor element and the internal lead is 0.7 to 1.5 times the linear expansion coefficient of the sealing member. It consists of

According to a third aspect of the present invention, in the semiconductor device according to the first aspect, the fixing member has an epoxy resin filled with 70 to 80 wt% of silica, and a linear expansion coefficient of 10.5 to.
It is composed of 30 × 10 ⁻⁶ 1 / ° C.

A semiconductor device according to a fourth aspect of the present invention is the semiconductor device according to the first or third aspect, wherein the surface of the fixing member is covered with a metal thin film.

According to a fifth aspect of the present invention, in the second aspect, the fixing member has an epoxy resin filled with silica of 70 to 80 wt% and a linear expansion coefficient of 10.5 to.
It is composed of 30 × 10 ⁻⁶ 1 / ° C.

According to a sixth aspect of the present invention, in the method of manufacturing a semiconductor device, a sheet-shaped fixing member having a desired thickness is sandwiched at a predetermined position between the die pad and the semiconductor element, and the fixing member is heated and heated. It is pressurized and cured, and the die pad and the semiconductor element are sealed with a sealing member.

According to a seventh aspect of the present invention, in the method of manufacturing a semiconductor device, a sheet-like fixing member having a thickness of 50 μm or less is sandwiched at a predetermined position between the die pad and the semiconductor element, and the fixing member is provided at 150. It is heated to ˜200 ° C. and pressurized to about 30 kg / mm ² , and cured to a thickness of 20 μm or less, and the die pad and the semiconductor element are sealed with a sealing member.

According to an eighth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, wherein a sheet-like fixing member having a desired thickness and having a surface covered with a metal thin film is provided between the die pad and the semiconductor element. It is sandwiched at a predetermined position, and the fixing member is heated and pressed to be cured, and the die pad and the semiconductor element are sealed with a sealing member.

According to a ninth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, wherein a sheet-like fixing member having a thickness of 50 μm or less and having a surface covered with a metal thin film is provided between the die pad and the semiconductor element. At a predetermined position, heat the fixing member to 150 to 200 ° C. and pressurize it to about 30 kg / mm ² , and harden it to a thickness of 20 μm or less, and seal the die pad and the semiconductor element with a sealing member. Is.

According to a tenth aspect of the present invention, in the method of manufacturing a semiconductor device, a sheet-like fixing member having a desired thickness is sandwiched at a predetermined position between the inner lead and the semiconductor element, and the fixing member is heated. Then, the inner lead and the semiconductor element are sealed with a sealing member by applying pressure and curing.

According to the eleventh aspect of the present invention, in the method of manufacturing a semiconductor device, a sheet-like fixing member having a thickness of 50 μm or less is sandwiched at a predetermined position between the inner lead and the semiconductor element, and the fixing member is attached. It is heated to 150 to 200 ° C. and pressurized to about 30 kg / mm ² , and cured to a thickness of 20 μm or less, and then the internal lead and the semiconductor element are sealed with a sealing member.

[0022]

The fixing member for a semiconductor device according to claim 1 of the present invention reduces thermal stress with the sealing member.

The fixing member of the semiconductor device according to the second aspect of the present invention reduces the thermal stress with the sealing member.

Further, the fixing member of the semiconductor device according to claim 3 of the present invention can easily obtain a sealing member which can reduce moisture absorption and thermal stress.

Further, the fixing member of the semiconductor device according to the fourth aspect of the present invention electrically connects the semiconductor element and the die pad.

Further, the fixing member of the semiconductor device according to the fifth aspect of the present invention can easily obtain the sealing member which can reduce moisture absorption and thermal stress.

According to a sixth aspect of the present invention, in the method for manufacturing a semiconductor device, a sheet-like fixing member having a desired thickness is sandwiched between a die pad and a semiconductor element at a predetermined position, and the fixing member is heated and pressurized. Since it is cured by sealing the die pad and the semiconductor element with a sealing member,
The thermal stress between the fixing member and the sealing member is reduced.

According to a seventh aspect of the present invention, in the method for manufacturing a semiconductor device, a sheet-like fixing member having a thickness of 50 μm or less is sandwiched at a predetermined position between the die pad and the semiconductor element, and the fixing member is 150 to 150 μm thick. Since it is heated to 200 ° C. and pressurized to about 30 kg / mm ² and cured to a thickness of 20 μm or less and the die pad and the semiconductor element are sealed with the sealing member, the fixing member and the sealing member are separated from each other. Reduce thermal stress.

In the method for manufacturing a semiconductor device according to the eighth aspect of the present invention, a sheet-like fixing member having a desired thickness and having a surface covered with a metal thin film is provided between the die pad and the semiconductor element. In place of, the fixing member is heated and pressurized to be cured, so that the die pad and the semiconductor element are sealed by the sealing member, so that the thermal stress between the fixing member and the sealing member is reduced, The semiconductor element and the die pad are electrically connected.

According to a ninth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, wherein a sheet-like fixing member having a thickness of 50 μm or less and having a surface covered with a metal thin film is provided between the die pad and the semiconductor element. Scissors at a specified location, heat the fixing member to 150 to 200 ° C, and 30 kg / mm ²
The die pad and the semiconductor element are sealed with the sealing member after being pressed to a certain degree and cured to a thickness of 20 μm or less, so that the thermal stress between the fixing member and the sealing member is reduced, and the semiconductor element is reduced. And the die pad are electrically connected.

According to a tenth aspect of the present invention, in the method of manufacturing a semiconductor device, a sheet-shaped fixing member having a desired thickness is sandwiched between predetermined positions between the inner lead and the semiconductor element, and the fixing member is heated and heated. Since the internal lead and the semiconductor element are sealed by the sealing member by being pressed and cured, the thermal stress between the fixing member and the sealing member is reduced.

According to the eleventh aspect of the present invention, in the method for manufacturing a semiconductor device, a sheet-like fixing member having a thickness of 50 μm or less is sandwiched at a predetermined position between the inner lead and the semiconductor element, and the fixing member is made 150 Since the internal lead and the semiconductor element are sealed with the sealing member, the fixing member and the sealing member are heated to 200 ° C. and pressurized to about 30 kg / mm ² and cured to a thickness of 20 μm or less. And reduce thermal stress.

[0033]

【Example】

Example 1. Embodiments of the present invention will be described below with reference to the drawings. 1 is a sectional view showing the structure of a semiconductor device according to a first embodiment of the present invention. In the figure, the same parts as those in the conventional case are designated by the same reference numerals, and the description thereof will be omitted. Reference numeral 14 is a die bond material as a fixing member for fixing the semiconductor element 1 and the die pad 2, for example, epoxy resin containing silica of 70 to 70.
80 wt% high filling and linear expansion coefficient of 10.5 to 30 ×
It is 10 ⁻⁶ 1 / ° C.

Next, a method of manufacturing the semiconductor device configured as described above will be described with reference to FIGS.
First, for example, the bulk die bond material 14a is applied to the die 15
(FIG. 2A), the die bond material 14a is melted by pressurizing and heating it with the plunger 16, and at this time, the die bond material 14a is supplied through the vacuum hole 15a provided at the bottom of the die 15. Degas the air inside, for example 50
It is formed into a sheet-shaped die bond material 14b having a thickness of not more than μm (FIG. 2B). At this time, the die bond material 14b is 5
The reason why it is formed to a thickness of 0 μm or less is to facilitate the formation to a thickness of 20 μm or less, which is the thickness at the time of finishing described later. Next, the die bond material 14b is processed into a desired shape by using, for example, mechanical or chemical treatment.

The die-bonding material 14b having a desired sheet-like shape is formed through these steps in comparison with the viscosity of the die-bonding material 3 in the conventional case. This is because it is very high and the fluidity is poor, so that the conventionally used processes such as the dispensing method, stamping and screen printing cannot be used.

Next, the die pad 2 is placed on the heating table 17, and the die bond material 1 is placed at a predetermined position on the die pad 2.
4b is placed (FIG. 3A), and the semiconductor element 1 is placed at a predetermined position on this (FIG. 3B). Next, the die bonding material 14b is melted on the heating table 17 via the die pad 2 and is generally the melting temperature of the die bonding material 14b, for example, 1
It is generally used by applying a heat of 50 to 200 ° C. and melting by applying a pressure of about 30 kg / mm ² which does not affect the semiconductor element 1 and the like via the tool 18 with the tool 18. The die-bonding material 14 having a thickness of, for example, 20 μm or less is formed and fixed (FIG. 3C). (still,
At this time, the tool 18 may be provided with a heating mechanism so that the tool 18 heats the die bond material 14b through the semiconductor element 1. )

Thereafter, as in the conventional case, the capillary 9
Then, the wire 4 is crimped to the electrode 10 and the lead terminal 5 respectively (FIG. 3 (d)). Next, as shown in FIG. 1, a part of the semiconductor element 1, the die pad 2, the wire 4 and the lead terminal 5 is sealed with a mold resin 6 to form a desired shape,
For example, it is mounted on a printed circuit board or the like by soldering or the like.

The semiconductor device of Example 1 configured as described above and the semiconductor device using a die bond material having a higher linear expansion coefficient than the die bond material 14 and the die bond material having a lower linear expansion coefficient than the die bond material 14 were used. An experiment was conducted to compare the crack generation rates of semiconductor devices. The experimental conditions are a temperature of 85 ° C. and a temperature of 85% RH.
Each semiconductor device is stored for 24 hours to 72 hours and then reflowed (for example, hot air or thermal infrared rays 230
Passing through an atmosphere of ° C) The occurrence rates of cracks were compared.
From the above experimental results, it was found that the crack generation rate was particularly low when the linear expansion coefficient of the die bond material 14 was within the range of 0.7 to 1.5 times the linear expansion coefficient of the mold resin 6.

Example 2. In the first embodiment, the semiconductor device 1
The case where the electrical connection between the die pad 2 and the die pad 2 is not described, but in the second embodiment, the semiconductor element 1 and the die pad 2 are connected.
The case of electrically connecting and will be described. First,
After forming the sheet-shaped die bond material 14b as shown in FIG. 2B of Example 1, the surface of the die bond material 14b is formed of, for example, silver, copper, or the like by a method such as plating, vapor deposition or sputtering. The die bond material 14b is made conductive by covering it with a metal thin film such as aluminum. Then, the semiconductor device is formed through the same steps as those in the first embodiment. With this configuration, the semiconductor element 1 and the die pad 2 can be electrically connected to each other,
The semiconductor device 1 can be grounded by the die pad 2.

Example 3. FIG. 4 is a sectional view showing the structure of the third embodiment of the present invention. In the figure, the same parts as those in the above-mentioned conventional case are designated by the same reference numerals and the description thereof will be omitted. Reference numeral 19 denotes a die bond material as a fixing member for fixing the semiconductor element 1 and the internal lead 5a. For example, epoxy resin is highly filled with silica in an amount of 70 to 80 wt% and the linear expansion coefficient is 1.
It is 0.5 to 30 × 10 ⁻⁶ 1 / ° C.

Next, a method of manufacturing the semiconductor device configured as described above will be described with reference to FIGS.
First, the die-bonding material 19a is molded into a sheet having a size of, for example, 50 μm or less through the same steps as in the case of the above-described Example 1.
The die bond material 19a is processed into a desired shape by using, for example, mechanical or chemical treatment. Then, as in the conventional case, the semiconductor element 1 is placed on the tray 12, and the processed die bonding material 19a is placed at a predetermined position on the semiconductor element 1 (FIGS. 5 and 6 (a)).

Next, the internal lead 5a is placed at a predetermined position on the die bond material 19a (FIG. 6 (b)), and the tool 20 having a heating means is used to attach the internal lead 5a to the die bond material 19a via the internal lead 5a. Generally, a heat of 150 to 200 ° C., which is the melting temperature of the die bonding material 19a, is applied, and the semiconductor element 1 or the like is not affected, for example, 30 kg / mm.
A pressure of about ² is applied to melt it, and the die-bonding material 19 having a thickness of, for example, 20 μm or less which is generally used is fixed (FIG. 6C).

Thereafter, the wire 4 is connected to the electrode 10 and the internal lead 5a as in the conventional case (FIG. 6 (d)).
Next, as shown in FIG. 4, the semiconductor element 1, the wires 4 and the inner leads 5a are sealed with a molding resin 6 to form a desired shape, and mounted on a printed circuit board or the like by soldering or the like.

Since the semiconductor device of the fourth embodiment configured as described above is formed by the same die bond material 19 as that of the first embodiment, it goes without saying that the same effects as those of the first embodiment can be obtained. Yes.

Example 4. In each of the above examples, when the linear expansion coefficient of the mold resin 6 is 15 to 20 × 10 ⁻⁶ 1 / ° C., the epoxy resin is highly filled with silica at 70 to 80 wt% as an example of the die bonding materials 14 and 19, and the linear expansion coefficient is 1
Although an example of using the resin of 0.5 to 30 × 10 ⁻⁶ 1 / ° C. is shown, the invention is not limited to this, and when the other molding resin is used, the linear expansion coefficient of the molding resin of 0. By using a die bond material of 7 to 1.5 times, the moisture absorption of the die bond material and the thermal stress between the die bond material and the mold resin can be reduced, so that the same effect as each of the above-described examples can be obtained. Needless to say.

[0046]

As described above, according to claim 1 of the present invention, the linear expansion coefficient of the fixing member for fixing the semiconductor element and the die pad is 0.7 to 1.5 of the linear expansion coefficient of the sealing member. Since it is doubled, it is possible to provide a semiconductor device in which cracking of the sealing member is prevented and reliability is improved.

According to claim 2 of the present invention, the linear expansion coefficient of the fixing member for fixing the semiconductor element and the internal lead is 0.7 to 1.5 times the linear expansion coefficient of the sealing member. As a result, it is possible to provide a semiconductor device that improves the reliability by preventing the occurrence of cracks in the sealing member.

According to a third aspect of the present invention, in the first aspect, the fixing member comprises an epoxy resin containing 70 to 70% silica.
80 wt% filling and linear expansion coefficient of 10.5 to 30 × 10
^{Since the} temperature is set to ^-6 1 / ° C, it is possible to easily obtain a sealing member that can reduce the hygroscopicity of the fixing member and the thermal stress with the fixing member. can do.

According to a fourth aspect of the present invention, in the first or third aspect, the surface of the fixing member is covered with the metal thin film, so that the semiconductor element is grounded through the fixing member. It is possible to provide a semiconductor device that can be used as a die pad.

According to a fifth aspect of the present invention, in the second aspect, the fixing member is made of epoxy resin containing silica of 70 to 70%.
80 wt% filling and linear expansion coefficient of 10.5 to 30 × 10
^{Since the} temperature is set to ^-6 1 / ° C, it is possible to easily obtain a sealing member that can reduce the hygroscopicity of the fixing member and the thermal stress with the fixing member. can do.

According to a sixth aspect of the present invention, in the first or third aspect, a sheet-like fixing member having a desired thickness is sandwiched and fixed at a predetermined position between the die pad and the semiconductor element. Since the member is heated and pressed to be cured and the die pad and the semiconductor element are sealed with the sealing member, a method of manufacturing a semiconductor device in which cracking of the sealing member is prevented and reliability is improved. Can be provided.

According to a seventh aspect of the present invention, in the first or third aspect, a sheet-like fixing member having a thickness of 50 μm or less is sandwiched at a predetermined position between the die pad and the semiconductor element, Fixing member 150-200
Heated to ℃ and pressurized to about 30kg / mm ² , 20μ
Since the die pad and the semiconductor element are cured with a thickness of m or less and sealed with a sealing member, a method of manufacturing a semiconductor device that prevents cracks in the sealing member and improves reliability is provided. Can be provided.

According to an eighth aspect of the present invention, in the fourth aspect, a sheet-like fixing member having a desired thickness and having a surface covered with a metal thin film is provided between the die pad and the semiconductor element. It is pinched in a predetermined place, the fixing member is heated and pressed to cure, and the die pad and the semiconductor element are sealed with the sealing member, so that cracking of the sealing member is prevented and reliability is improved. It is possible to provide a method for manufacturing a semiconductor device that improves and grounds a semiconductor element to a die pad through a fixing member.

According to a ninth aspect of the present invention, in the fourth aspect, a sheet-like fixing member having a thickness of 50 μm or less and having a surface covered with a metal thin film is provided between the die pad and the semiconductor element. At a predetermined position, heat the fixing member to 150 to 200 ° C. and pressurize it to about 30 kg / mm ² , and harden it to a thickness of 20 μm or less to seal the die pad and the semiconductor element with a sealing member. Therefore, it is possible to provide a method for manufacturing a semiconductor device in which cracking of the sealing member is prevented, reliability is improved, and the ground of the semiconductor element is grounded to the die pad through the fixing member.

According to a tenth aspect of the present invention, in the second or fifth aspect, a sheet-like fixing member having a desired thickness is sandwiched at a predetermined position between the inner lead and the semiconductor element, Since the fixing member is heated and pressed to be cured and the inner lead and the semiconductor element are sealed by the sealing member, a crack of the sealing member is prevented from occurring and the reliability of the semiconductor device is improved. A manufacturing method can be provided.

According to claim 11 of the present invention, 50
A sheet-shaped fixing member having a thickness of less than or equal to μm is sandwiched at a predetermined position between the internal lead and the semiconductor element, and the fixing member is heated to 150 to 200 ° C. and 30 kg / mm ²
Since the internal lead and the semiconductor element are sealed with the sealing member after being pressed to a certain degree and cured to a thickness of 20 μm or less, cracking of the sealing member is prevented and reliability is improved. A method for manufacturing a semiconductor device can be provided.

[Brief description of drawings]

FIG. 1 is a sectional view showing a configuration of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a step in the method of manufacturing the semiconductor device shown in FIG.

3 is a cross-sectional view showing a step of the method of manufacturing the semiconductor device shown in FIG.

FIG. 4 is a sectional view showing a configuration of a semiconductor device according to a third embodiment of the present invention.

5 is a cross-sectional view showing a step of the method of manufacturing the semiconductor device shown in FIG.

6 is a cross-sectional view showing a step of the method of manufacturing the semiconductor device shown in FIG.

FIG. 7 is a sectional view showing a configuration of a conventional semiconductor device.

FIG. 8 is a cross-sectional view showing a step in a method of manufacturing the semiconductor device shown in FIG.

9 is a diagram showing physical properties of materials of the semiconductor device shown in FIG.

FIG. 10 is a cross-sectional view showing the configuration of another conventional semiconductor device.

11 is a cross-sectional view showing a step in the method of manufacturing the semiconductor device shown in FIG.

12 is a cross-sectional view showing a step in the method of manufacturing the semiconductor device shown in FIG.

[Explanation of symbols]

1 semiconductor element, 2 die pad, 5 lead terminal, 5
a inner lead, 5b outer lead, 6 sealing resin, 1
4,14a, 14b, 19,19a Die bond material, 1
5 die, 15a vacuum hole, 16 plunger, 17
Heating table, 18 tools, 20 tools.

Claims (11)

[Claims] 1. A semiconductor device comprising: a semiconductor element; a die pad; a fixing member for fixing the semiconductor element and the die pad; and a sealing member for sealing the semiconductor element and the die pad. A semiconductor device, wherein the linear expansion coefficient of the member is 0.7 to 1.5 times the linear expansion coefficient of the sealing member. 2. A semiconductor device comprising a semiconductor element, an internal lead, a fixing member for fixing the semiconductor element and the internal lead, and a sealing member for sealing the semiconductor element and the internal lead. A semiconductor device, wherein the linear expansion coefficient of the fixing member is 0.7 to 1.5 times the linear expansion coefficient of the sealing member. 3. The fixing member is made of epoxy resin and silica of 70.
˜80 wt% filled with a linear expansion coefficient of 10.5-30 ×
The semiconductor device according to claim 1, wherein the semiconductor device is formed at 10 ^-6 1 / ° C. 4. The semiconductor device according to claim 1, wherein the surface of the fixing member is covered with a thin metal film. 5. The fixing member is made of epoxy resin and silica of 70.
˜80 wt% filled with a linear expansion coefficient of 10.5-30 ×
The semiconductor device according to claim 2, wherein the semiconductor device is formed at 10 ^-6 1 / ° C. 6. A step of sandwiching a sheet-shaped fixing member having a desired thickness at a predetermined position between the die pad and the semiconductor element, a step of hardening the fixing member by heating and pressurizing, the die pad and the 4. The method of manufacturing a semiconductor device according to claim 1, further comprising a step of sealing the semiconductor element with a sealing member. 7. A step of sandwiching a sheet-shaped fixing member having a thickness of 50 μm or less at a predetermined position between the die pad and the semiconductor element, and the fixing member at 150 to 200 ° C.
And pressurize to about 30 kg / mm ² to 20 μm
4. The semiconductor according to claim 1, further comprising: a step of hardening the die pad and the semiconductor element to have the following thickness, and a step of sealing the die pad and the semiconductor element with a sealing member. Device manufacturing method. 8. A step of sandwiching a sheet-shaped fixing member having a desired thickness and whose surface is covered with a metal thin film at a predetermined position between a die pad and a semiconductor element, and heating and applying the fixing member. The method of manufacturing a semiconductor device according to claim 4, further comprising: a step of pressing and curing, and a step of sealing the die pad and the semiconductor element with a sealing member. 9. A step of sandwiching a sheet-like fixing member having a thickness of 50 μm or less and having a surface covered with a metal thin film at a predetermined position between the die pad and the semiconductor element.
The fixing member is heated to 150 to 200 ° C. and 30 kg
5. The method according to claim 4, further comprising a step of applying a pressure of about / mm ² to a thickness of 20 μm or less and curing, and a step of sealing the die pad and the semiconductor element with a sealing member. Of manufacturing a semiconductor device of. 10. A step of sandwiching a sheet-shaped fixing member having a desired thickness at a predetermined position between the internal lead and the semiconductor element, a step of heating and pressing the fixing member to cure the fixing member, and the internal lead. 6. The method of manufacturing a semiconductor device according to claim 2, further comprising: a step of sealing the semiconductor element with a sealing member. 11. A step of sandwiching a sheet-like fixing member having a thickness of 50 μm or less at a predetermined position between an internal lead and a semiconductor element, and 150 to 200 of the fixing member.
Heated to ℃ and pressurized to about 30kg / mm ² , 20μ
6. The method according to claim 2, further comprising: a step of hardening to a thickness of m or less; and a step of sealing the internal lead and the semiconductor element with a sealing member. Of manufacturing a semiconductor device of.