JPH0721040B2 - Sealing resin composition - Google Patents

Sealing resin composition

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Publication number
JPH0721040B2
JPH0721040B2 JP62000590A JP59087A JPH0721040B2 JP H0721040 B2 JPH0721040 B2 JP H0721040B2 JP 62000590 A JP62000590 A JP 62000590A JP 59087 A JP59087 A JP 59087A JP H0721040 B2 JPH0721040 B2 JP H0721040B2
Authority
JP
Japan
Prior art keywords
resin
ketone
resin composition
epoxy
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62000590A
Other languages
Japanese (ja)
Other versions
JPS63170409A (en
Inventor
和弘 沢井
Original Assignee
東芝ケミカル株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東芝ケミカル株式会社 filed Critical 東芝ケミカル株式会社
Priority to JP62000590A priority Critical patent/JPH0721040B2/en
Publication of JPS63170409A publication Critical patent/JPS63170409A/en
Publication of JPH0721040B2 publication Critical patent/JPH0721040B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は、耐湿性、半田耐熱性に優れた電子・電気部品
等の封止用樹脂組成物に関する。
DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a resin composition for encapsulation of electronic and electric parts and the like, which is excellent in moisture resistance and solder heat resistance.

(従来の技術) 近年、半導体集積回路の分野において、高集積化、高信
頼性化の技術開発と同時に、半導体装置の実装工程の自
動化が推進されている。例えばフラットパッケージ型の
半導体装置を回路基板に取り付ける場合、従来はリード
ピン毎に半田付けを行っていたが、最近は、半導体装置
全体を250℃以上に加熱した半田浴に浸漬して、半田付
けを行う方法が採用されている。
(Prior Art) In recent years, in the field of semiconductor integrated circuits, along with technological development of high integration and high reliability, automation of a mounting process of a semiconductor device has been promoted. For example, when mounting a flat package type semiconductor device on a circuit board, conventionally, soldering was performed for each lead pin, but recently, the entire semiconductor device is dipped in a solder bath heated to 250 ° C or higher for soldering. The method of doing is adopted.

(発明が解決しようとする問題点) 従来のエポキシ樹脂、ノボラック型フェノール樹脂およ
び無機質充填剤からなる樹脂組成物で封止した半導体装
置では、装置全体の半田浴浸漬を行うと耐湿性が低下す
るという欠点があった。特に吸湿した半導体装置を半田
浸漬すると封止樹脂と半導体チップおよびフレームとの
間に剥がれが生じ、著しい耐湿劣化をおこし、電極の腐
食による断線や水分によるリーク電流を生じ、長期間の
信頼性を保証することができないという欠点がある。こ
のため吸湿の影響が少なく、装置全体の半田浴浸漬をし
ても耐湿劣化の少ない封止用樹脂の開発が強く要望され
ていた。
(Problems to be Solved by the Invention) In a semiconductor device sealed with a conventional resin composition composed of an epoxy resin, a novolac type phenolic resin, and an inorganic filler, moisture resistance decreases when the entire device is immersed in a solder bath. There was a drawback. In particular, when a semiconductor device that has absorbed moisture is dipped in solder, peeling occurs between the encapsulating resin and the semiconductor chip and frame, causing a significant deterioration in moisture resistance, causing wire breakage due to electrode corrosion and leak current due to moisture, and long-term reliability. It has the drawback that it cannot be guaranteed. Therefore, there has been a strong demand for the development of a sealing resin that is less affected by moisture absorption and has less moisture resistance deterioration even when the entire device is immersed in a solder bath.

本発明は、上記の欠点を解消し、要望に応えるためにな
されたもので、吸湿の影響が少なく、特に半田浴浸漬後
の耐湿性および半田耐熱性に優れた封止用樹脂組成物を
提供しようとするものである。
The present invention has been made in order to solve the above-mentioned drawbacks and to meet the demand, and has a small influence of moisture absorption, and particularly provides a sealing resin composition having excellent moisture resistance and solder heat resistance after immersion in a solder bath. Is what you are trying to do.

[発明の構成] (問題点を解決するための手段と作用) 本発明者は、上記の目的を達成しようと鋭意研究を重ね
た結果、封止用樹脂の成分にケトン樹脂を配合すれば、
耐湿性および半田耐熱性が向上して上記目的を達成でき
ることを見いだし、本発明を完成したものである。
[Structure of the Invention] (Means and Actions for Solving Problems) The present inventor has conducted diligent research to achieve the above-mentioned object, and as a result, if a ketone resin was added to the component of the sealing resin,
The inventors have found that the above object can be achieved by improving the moisture resistance and solder heat resistance, and completed the present invention.

すなわち、本発明は、 (A)エポキシ樹脂、 (B)ノボラック型フェノール樹脂、 (C)ケトン樹脂および (D)無機質充填剤 を必須成分とし、全体の樹脂組成物に対して、前記
(C)ケトン樹脂を0.1〜10重量%、また前記(D)無
機質充填剤を25〜90重量%含有するとともに、(C)ケ
トン樹脂には、フラン環を有する化合物とケトンとの共
縮合樹脂を含まないことを特徴とする封止用樹脂組成物
である。そしてエポキシ樹脂のエポキシ基(a)とノボ
ラック型フェノール樹脂のフェノール性水酸基(b)と
の当量比[(a)/(b)]が0.1〜10の範囲内にある
封止用樹脂組成物である。
That is, the present invention comprises (A) an epoxy resin, (B) a novolac type phenol resin, (C) a ketone resin, and (D) an inorganic filler as essential components, and with respect to the entire resin composition, (C) It contains 0.1 to 10% by weight of a ketone resin and 25 to 90% by weight of the (D) inorganic filler, and the (C) ketone resin does not include a cocondensation resin of a compound having a furan ring and a ketone. It is a resin composition for sealing characterized by the above. A sealing resin composition in which the equivalent ratio [(a) / (b)] of the epoxy group (a) of the epoxy resin and the phenolic hydroxyl group (b) of the novolac type phenol resin is within the range of 0.1 to 10 is there.

本発明に用いる(A)エポキシ樹脂としては、その分子
中にエポキシ基を少なくとも2個有する化合物である限
り、分子構造、分子量など特に制限はなく、一般に封止
用材料に使用されているものを広く包含することができ
る。例えばビスフェノール型の芳香族系、シクロヘキサ
ン誘導体等の脂環族系、さらに次の一般式で示されるエ
ポキシノボラック系等の樹脂が挙げられる。
As the epoxy resin (A) used in the present invention, as long as it is a compound having at least two epoxy groups in its molecule, there are no particular restrictions on its molecular structure, molecular weight, etc., and those generally used for sealing materials can be used. Can be broadly included. Examples thereof include bisphenol type aromatic resins, alicyclic resins such as cyclohexane derivatives, and epoxy novolac resins represented by the following general formula.

(式中、R1は水素原子、ハロゲン原子又はアルキル基
を、R2は水素原子又はアルキル基を、nは1以上の整数
をそれぞれ表す) これらのエポキシ樹脂は、単独もしくは2種以上の混合
系として用いる。
(In the formula, R 1 represents a hydrogen atom, a halogen atom or an alkyl group, R 2 represents a hydrogen atom or an alkyl group, and n represents an integer of 1 or more.) These epoxy resins may be used alone or in combination of two or more. Used as a system.

本発明に用いる(B)ノボラック型フェノール樹脂とし
ては、フェノール,アルキルフェノール等のフェノール
類とホルムアルデヒドあるいはパラホルムアルデヒドを
反応させて得られるノボラック型フェノール樹脂、およ
びこれらの変性樹脂、例えばエポキシ化もしくはブチル
化ノボラック型フェノール樹脂等が挙げられ、これらの
樹脂は単独もしくは2種以上の混合系として用いる。ノ
ボラック型フェノール樹脂の配合割合は、前述した
(A)エポキシ樹脂のエポキシ基(a)と、(B)ノボ
ラック型フェノール樹脂のフェノール性水酸基(b)と
の当量比[(a)/(b)]が0.1〜10の範囲内である
ことが望ましい。当量比が0.1未満もしくは10を超える
と、耐湿性、成形作業性および硬化物の電気特性が悪く
なり、いずれの場合も好ましくない。従って上記の範囲
内に限定するのがよい。
Examples of the (B) novolak type phenol resin used in the present invention include novolak type phenol resins obtained by reacting phenols such as phenol and alkylphenol with formaldehyde or paraformaldehyde, and modified resins thereof, for example, epoxidized or butylated novolak. Examples thereof include phenolic resins and the like, and these resins are used alone or as a mixed system of two or more kinds. The mixing ratio of the novolac type phenol resin is the equivalent ratio [(a) / (b) of the epoxy group (a) of the above-mentioned (A) epoxy resin and the phenolic hydroxyl group (b) of (B) the novolac type phenol resin). ] Is preferably within the range of 0.1 to 10. If the equivalent ratio is less than 0.1 or exceeds 10, the moisture resistance, the molding workability, and the electrical properties of the cured product deteriorate, which is not preferable. Therefore, it is preferable to limit it to the above range.

本発明に用いる(C)ケトン樹脂としては、アルカリ触
媒の存在下でケトンとホルムアルデヒドとの重縮合反応
によって得られるものであれば、分子量、分子構造等に
特に制限はなく広く使用できる。但し、(C)ケトン樹
脂には、フラン環を有する化合物とケトンとの共縮合樹
脂、例えばフルフラール・ケトン共縮合樹脂を含まない
ものとする。具体的なものとしては、例えば次のものが
挙げられる。
The (C) ketone resin used in the present invention is not particularly limited in molecular weight, molecular structure and the like and can be widely used as long as it is obtained by a polycondensation reaction of a ketone and formaldehyde in the presence of an alkali catalyst. However, the (C) ketone resin does not include a co-condensation resin of a compound having a furan ring and a ketone, for example, a furfural-ketone co-condensation resin. Specific examples include the following.

(但し、式中nは1以上の整数を表す) これらのケトン樹脂は単独もしくは2種以上の混合系と
して使用する。ケトン樹脂の配合割合は、全体の樹脂組
成物に対して、0.1〜10重量%の範囲とする。その割合
が0.1重量%未満では、半田耐熱性に効果なく、また10
重量%を超えると、金型汚れ、粘度の増加等、成形性の
面で悪影響を与え、実用に適さず好ましくない。このケ
トン樹脂を用いることによって、封止樹脂と半導体チッ
プとの密着性や、封止樹脂とリードフレームとの密着性
が向上し、半田浴に浸漬しても耐湿性の劣化が少ない。
(However, in the formula, n represents an integer of 1 or more.) These ketone resins are used alone or as a mixed system of two or more kinds. The blending ratio of the ketone resin is in the range of 0.1 to 10% by weight based on the entire resin composition. If the proportion is less than 0.1% by weight, it has no effect on solder heat resistance.
If it exceeds 5% by weight, it has an adverse effect on moldability such as mold fouling and viscosity increase, and is not suitable for practical use. By using this ketone resin, the adhesiveness between the encapsulating resin and the semiconductor chip and the adhesiveness between the encapsulating resin and the lead frame are improved, and the moisture resistance is less deteriorated even when immersed in a solder bath.

本発明に用いる(D)無機質充填剤としては、シリカ粉
末、アルミナ、三酸化アンチモン、タルク、炭酸カルシ
ウム、チタンホワイト、クレー、マイカ、ベンガラ、ガ
ラス繊維、炭素繊維等が挙げられ、これらは単独もしく
は2種以上の混合系として用いる。これらのなかでも特
にシリカ粉末やアルミナが好ましく使用される。無機質
充填剤の配合割合は、全体の樹脂組成物に対して25〜90
重量%の範囲で含有させる。その割合が25重量%未満で
は耐湿性、耐熱性、機械的特性および成形性に効果な
く、また90重量%を超えるとカサバリが大きくなり成形
性が悪く実用に適さない。
Examples of the inorganic filler (D) used in the present invention include silica powder, alumina, antimony trioxide, talc, calcium carbonate, titanium white, clay, mica, red iron oxide, glass fiber, carbon fiber and the like, which may be used alone or Used as a mixed system of two or more kinds. Of these, silica powder and alumina are particularly preferably used. The blending ratio of the inorganic filler is 25 to 90 with respect to the entire resin composition.
It is contained in the range of% by weight. If the proportion is less than 25% by weight, the moisture resistance, heat resistance, mechanical properties and moldability are not effective, and if it exceeds 90% by weight, the dryness becomes large and the moldability becomes poor and it is not suitable for practical use.

本発明の封止用樹脂組成物は、エポキシ樹脂、ノボラッ
ク型フェノール樹脂、ケトン樹脂および無機質充填剤を
必須成分とするが、必要に応じて、天然ワックス類、合
成ワックス類、直鎖脂肪酸の金属塩、酸アミド、エステ
ル類、パラフィン類などの離型剤、塩素化パラフィン、
ブロムトルエン、ヘキサブロムベンゼン、三酸化アンチ
モンなどの難燃剤、カーボンブラック、ベンガラなどの
着色剤、シランカップリング剤、種々の硬化促進剤等を
適宜添加配合することもできる。
The encapsulating resin composition of the present invention contains an epoxy resin, a novolac-type phenol resin, a ketone resin, and an inorganic filler as essential components, but if necessary, natural waxes, synthetic waxes, and straight chain fatty acid metals. Mold release agents such as salts, acid amides, esters, paraffins, chlorinated paraffins,
Flame retardants such as bromotoluene, hexabromobenzene and antimony trioxide, colorants such as carbon black and red iron oxide, silane coupling agents, various curing accelerators and the like may be appropriately added and blended.

本発明の封止用樹脂組成物を成形材料として製造する場
合の一般的な方法は、エポキシ樹脂、ノボラック型フェ
ノール樹脂、ケトン樹脂、無機質充填剤、その他の原料
成分を所定の組成比に選んで、ミキサー等によって十分
均一に混合した後、更に熱ロールによる溶融混合処理、
またはニーダ等による混合処理を行い、次いで冷却固化
させ、適当な大きさに粉砕して成形材料とする。こうし
て得られた成形材料は、電子部品或いは電気部品の封
止、被覆、絶縁等に適用することができる。
A general method for producing the encapsulating resin composition of the present invention as a molding material is to select an epoxy resin, a novolac type phenolic resin, a ketone resin, an inorganic filler, and other raw material components at a predetermined composition ratio. , After mixing sufficiently evenly with a mixer or the like, further melt mixing treatment with a hot roll,
Alternatively, it is mixed with a kneader or the like, cooled and solidified, and then crushed to an appropriate size to obtain a molding material. The molding material thus obtained can be applied to sealing, covering, insulating, etc. of electronic parts or electric parts.

(実施例) 次に本発明を実施例によって具体的に説明するが、本発
明は以下の実施例に限定されるものではない。以下の実
施例および比較例において、「%」とあるのは「重量
%」を意味する。
(Examples) Next, the present invention will be specifically described by way of examples, but the present invention is not limited to the following examples. In the following Examples and Comparative Examples, "%" means "% by weight".

実施例 1 クレゾールノボラックエポキシ樹脂(エポキシ当量21
5)18%に、ノボラック型フェノール樹脂(フェノール
当量107)9%、次の式で示されるケトン樹脂2%、 溶融シリカ粉末71%、硬化促進剤0.3%、エステル系ワ
ックス0.3%、およびシラン系カップリング剤0.4%を常
温で混合し、更に90〜95℃で混練して冷却した後、粉砕
して成形材料を得た。得られた成形材料を170℃に加熱
した金型内にトランスファー注入し硬化させて成形品
(封止品)を得た。この成形品について耐湿性、応力等
に関連する諸特性を試験したのでその結果を第1表に示
したが、本発明の顕著な効果が認められた。
Example 1 Cresol novolac epoxy resin (epoxy equivalent 21
5) 18%, novolac type phenol resin (phenol equivalent 107) 9%, ketone resin 2% represented by the following formula, 71% fused silica powder, 0.3% hardening accelerator, 0.3% ester wax, and 0.4% silane coupling agent are mixed at room temperature, then kneaded at 90 to 95 ° C, cooled, and then ground to form a molding material. Got The obtained molding material was transferred into a mold heated to 170 ° C. and cured to obtain a molded product (sealed product). Various properties relating to moisture resistance, stress, etc. were tested on this molded product, and the results are shown in Table 1. The remarkable effects of the present invention were recognized.

実施例 2 クレゾールノボラックエポキシ樹脂(エポキシ当量21
5)18%に、ノボラック型フェノール樹脂(フェノール
当量107)9%、次の式で示しされるケトン樹脂2%、 シリカ粉末71%、硬化促進剤0.3%、エステル系ワック
ス0.3%およびシラン系カップリング剤0.4%を実施例1
と同様に混合、混練、粉砕して成形材料を得た。次いで
実施例1と同様にして成形品を得、また耐湿性、応力等
に関連する諸特性を試験したのでその結果を第1表に示
した。本発明の顕著な効果が認められた。
Example 2 Cresol novolac epoxy resin (epoxy equivalent 21
5) 18%, novolac type phenol resin (phenol equivalent 107) 9%, ketone resin 2% represented by the following formula, Example 1 containing 71% silica powder, 0.3% curing accelerator, 0.3% ester wax and 0.4% silane coupling agent.
Mixing, kneading and crushing were carried out in the same manner as above to obtain a molding material. Then, a molded product was obtained in the same manner as in Example 1, and various properties related to moisture resistance, stress, etc. were tested. The results are shown in Table 1. The remarkable effect of the present invention was recognized.

比較例 クレゾールノボラックエポキシ樹脂(エポキシ当量21
5)19%に、ノボラック型フェノール樹脂(フェノール
当量107)9%、シリカ粉末71%、硬化促進剤0.3%、エ
ステル系ワックス0.3%およびシラン系カップリング剤
0.4%を実施例1と同様にして成形材料を得た。この成
形材料を用いて成形品とし、成形品の諸特性について実
施例1と同様に試験した。その結果を第1表に示した。
Comparative Example Cresol novolac epoxy resin (epoxy equivalent 21
5) 19%, novolac type phenol resin (phenol equivalent 107) 9%, silica powder 71%, curing accelerator 0.3%, ester wax 0.3% and silane coupling agent
0.4% was obtained in the same manner as in Example 1 to obtain a molding material. Using this molding material, a molded product was made, and various characteristics of the molded product were tested in the same manner as in Example 1. The results are shown in Table 1.

実施例および比較例について行った吸水率、ガラス転移
温度、半田浴浸漬後の耐湿性の試験は、次のようにして
行った。吸水率は、トランスファー成形によって直径50
mm、厚さ3mmの成形品を作成し、これを127℃,2.5気圧の
飽和水蒸気中に24時間放置し、増加した重量によって求
めた。ガラス転移温度は、吸水率の試験と同じ成形品を
作成し、これを175℃で8時間の後硬化を行い、適当な
大きさのテストピースとし、熱機械分析装置を用いて測
定した。また、耐湿性は、封止用樹脂組成物を用いて、
2本以上のアルミニウム配線を有するシリコン製チップ
(テスト用素子)を通常の42アロイフレームに接着し、
175℃で2分間トアンスファー成形して5×10×1.5mmの
フラットパッケージ型成形品を得、その後175℃で8時
間後硬化を行った。この成形品を予め40℃,90%RH,100
時間の吸湿処理をした後、250℃の半田浴に10秒間浸漬
した。その後127℃,2.5気圧の飽和水蒸気中でプレッシ
ャー・クッカー・テスト(PCT)を行い、アルミニウム
の腐食による断線を不良として評価した。
The tests of water absorption, glass transition temperature, and moisture resistance after immersion in a solder bath, which were carried out for Examples and Comparative Examples, were conducted as follows. The water absorption rate is 50 by the transfer molding.
A molded product having a thickness of 3 mm and a thickness of 3 mm was prepared, and the molded product was allowed to stand in saturated steam at 127 ° C. and 2.5 atmospheric pressure for 24 hours, and the weight was increased. The glass transition temperature was measured by using a thermomechanical analyzer by making a molded article similar to that used in the water absorption test and subjecting this to post-curing at 175 ° C. for 8 hours to prepare a test piece of an appropriate size. Further, the humidity resistance is measured by using the resin composition for sealing.
Bond a silicon chip (test element) with two or more aluminum wires to a normal 42 alloy frame,
Tunspher molding was carried out at 175 ° C. for 2 minutes to obtain a 5 × 10 × 1.5 mm flat package type molded product, which was then post-cured at 175 ° C. for 8 hours. Pre-mold this molded product at 40 ℃, 90% RH, 100
After moisture absorption for a period of time, it was immersed in a solder bath at 250 ° C. for 10 seconds. After that, a pressure cooker test (PCT) was performed in saturated steam at 127 ° C. and 2.5 atm, and the breakage due to the corrosion of aluminum was evaluated as defective.

[発明の効果] 以上の説明および第1表から明らかなように、本発明の
封止用樹脂組成物は、半導体チップやリフトオフに対す
る密着性が良いために、吸湿の影響が少なく、半田浴に
浸漬した後でも耐湿性に優れ、その結果電極の腐食によ
る断線や水分によるリーク電流の発生などを著しく低減
することができ、しかも長期間に渡って信頼性を保証す
ることができる。また、250℃以上の半田浴浸漬にもか
かわらず優れた耐熱性を示した。
[Effects of the Invention] As is clear from the above description and Table 1, the encapsulating resin composition of the present invention has good adhesiveness to semiconductor chips and lift-off, and therefore has little effect of moisture absorption and is suitable for solder baths. Even after the immersion, the moisture resistance is excellent, and as a result, it is possible to remarkably reduce the disconnection due to the corrosion of the electrodes and the generation of the leakage current due to the moisture, and the reliability can be guaranteed for a long time. It also showed excellent heat resistance despite immersion in a solder bath at 250 ° C or higher.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01L 23/31 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display location H01L 23/31

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】(A)エポキシ樹脂、 (B)ノボラック型フェノール樹脂、 (C)ケトン樹脂および (D)無機質充填剤 を必須成分とし、全体の樹脂組成物に対して、前記
(C)ケトン樹脂を0.1〜10重量%、また前記(D)無
機質充填剤を25〜90重量%含有するとともに、(C)ケ
トン樹脂には、フラン環を有する化合物とケトンとの共
縮合樹脂を含まないことを特徴とする封止用樹脂組成
物。
1. An epoxy resin (A), a novolac type phenol resin (B), a ketone resin (C) and an inorganic filler (D) as essential components, and the (C) ketone is added to the entire resin composition. 0.1 to 10% by weight of a resin, 25 to 90% by weight of the (D) inorganic filler, and (C) a ketone resin not containing a cocondensation resin of a compound having a furan ring and a ketone. A resin composition for encapsulation, comprising:
【請求項2】エポキシ樹脂のエポキシ基(a)とノボラ
ック型フェノール樹脂のフェノール性水酸基(b)との
当量比[(a)/(b)]が0.1〜10の範囲内にある特
許請求の範囲第1項記載の封止用樹脂組成物。
2. The equivalent ratio [(a) / (b)] of the epoxy group (a) of the epoxy resin and the phenolic hydroxyl group (b) of the novolac type phenol resin is in the range of 0.1 to 10. The encapsulating resin composition according to claim 1.
JP62000590A 1987-01-07 1987-01-07 Sealing resin composition Expired - Lifetime JPH0721040B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62000590A JPH0721040B2 (en) 1987-01-07 1987-01-07 Sealing resin composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62000590A JPH0721040B2 (en) 1987-01-07 1987-01-07 Sealing resin composition

Publications (2)

Publication Number Publication Date
JPS63170409A JPS63170409A (en) 1988-07-14
JPH0721040B2 true JPH0721040B2 (en) 1995-03-08

Family

ID=11477944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62000590A Expired - Lifetime JPH0721040B2 (en) 1987-01-07 1987-01-07 Sealing resin composition

Country Status (1)

Country Link
JP (1) JPH0721040B2 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6097649A (en) * 1983-11-02 1985-05-31 Hitachi Ltd Resin sealed semiconductor device

Also Published As

Publication number Publication date
JPS63170409A (en) 1988-07-14

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