JPH0637546B2 - Sealing resin composition - Google Patents

Sealing resin composition

Info

Publication number
JPH0637546B2
JPH0637546B2 JP27785886A JP27785886A JPH0637546B2 JP H0637546 B2 JPH0637546 B2 JP H0637546B2 JP 27785886 A JP27785886 A JP 27785886A JP 27785886 A JP27785886 A JP 27785886A JP H0637546 B2 JPH0637546 B2 JP H0637546B2
Authority
JP
Japan
Prior art keywords
resin composition
resin
silica powder
present
moisture resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP27785886A
Other languages
Japanese (ja)
Other versions
JPS63132929A (en
Inventor
正典 小久保
Original Assignee
東芝ケミカル株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東芝ケミカル株式会社 filed Critical 東芝ケミカル株式会社
Priority to JP27785886A priority Critical patent/JPH0637546B2/en
Publication of JPS63132929A publication Critical patent/JPS63132929A/en
Publication of JPH0637546B2 publication Critical patent/JPH0637546B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は、耐湿性、半田耐熱性に優れた、封止用樹脂組
成物に関する。
Detailed description of the invention [Industrial application] The present invention relates to a sealing resin composition having excellent moisture resistance and solder heat resistance.

(従来の技術) 近年、半導体集積回路の分野において、高集積化、高信
頼性化の技術開発と同時に、半導体装置の実装工程の自
動化が推進されている。例えばフラットパッケージ型の
半導体装置を回路基板に取り付ける場合、従来はリード
ピン毎に半田付けを行っていたが、最近は半導体装置全
体を250℃以上に加熱した半田浴に浸漬して、半田付け
を行う方法が採用されている。
(Prior Art) In recent years, in the field of semiconductor integrated circuits, along with technological development of high integration and high reliability, automation of a mounting process of a semiconductor device has been promoted. For example, when attaching a flat package type semiconductor device to a circuit board, conventionally, each lead pin was soldered, but recently, the entire semiconductor device is dipped in a solder bath heated to 250 ° C or more to perform soldering. The method has been adopted.

(発明が解決しようとする問題点) 従来のエポキシ樹脂、ノボラック型フェノール樹脂およ
びシリカ粉末からなる樹脂組成物で封止した半導体装置
では、装置全体の半田浴浸漬を行うと耐湿性が低下する
という欠点があった。特に吸湿した半導体装置を半田浸
漬すると封止用樹脂と半導体チップおよびフレームとの
間に剥がれが発生し、著しい耐湿性劣化を生じ、電極の
腐食による断線や水分によるリーク電流を生じ、長期間
の信頼性を保証することができないという欠点がある。
このため吸湿の影響が少なく、装置全体の半田浴浸漬を
しても耐湿劣化の少ない封止用樹脂の開発が強く要望さ
れていた。
(Problems to be Solved by the Invention) In a semiconductor device sealed with a conventional resin composition composed of an epoxy resin, a novolac-type phenol resin, and silica powder, when the entire device is immersed in a solder bath, moisture resistance is lowered. There was a flaw. In particular, when a semiconductor device that has absorbed moisture is dipped in solder, peeling occurs between the encapsulating resin and the semiconductor chip and frame, causing a significant deterioration in moisture resistance, causing wire breakage due to electrode corrosion and leak current due to moisture, and The drawback is that reliability cannot be guaranteed.
Therefore, there has been a strong demand for the development of a sealing resin that is less affected by moisture absorption and has less moisture resistance deterioration even when the entire device is immersed in a solder bath.

本発明は、上記の欠点を解消し、要望に応えるためにな
されたもので、吸湿の影響が少なく、特に半田浴浸漬後
の耐湿性および半田耐熱性に優れた封止用樹脂組成物を
提供しようとするものである。
The present invention has been made in order to solve the above-mentioned drawbacks and to meet the demand, and has a small influence of moisture absorption, and particularly provides a sealing resin composition having excellent moisture resistance and solder heat resistance after immersion in a solder bath. Is what you are trying to do.

[発明の構成] (問題点を解決するための手段と作用) 本発明者は、上記の目的を達成しようと鋭意研究を重ね
た結果、リン酸基を有するオルガノシリコンと特定量の
シリカ粉末を配合すれば耐湿性および半田耐熱性の優れ
た樹脂組成物が得られることを見いだし、本発明を完成
したものである。すなわち、本発明は、 (A)エポキシ樹脂 (B)ノボラック型フェノール樹脂 (C)リン酸基を有するオルガノシリコンおよび (D)シリカ粉末 を含み、全体の樹脂組成物に対して、前記(D)シリカ
粉末を65〜85重量%の割合で含有することを特徴とする
封止用樹脂組成物である。
[Structure of the Invention] (Means and Actions for Solving Problems) As a result of intensive studies to achieve the above object, the present inventor has found that organosilicon having a phosphate group and a specific amount of silica powder are used. It was found that a resin composition excellent in moisture resistance and solder heat resistance can be obtained by blending, and the present invention has been completed. That is, the present invention includes (A) an epoxy resin, (B) a novolac-type phenol resin, (C) a phosphoric acid group-containing organosilicone, and (D) a silica powder. A resin composition for encapsulation, which contains silica powder in a proportion of 65 to 85% by weight.

本発明に用いる(A)エポキシ樹脂としては、その分子
中にエポキシ基を少なくとも2個有する化合物である限
り、分子構造、分子量などに特に制限はなく、一般に使
用されているものを広く包含することができる。例えば
ビスフェノール型の芳香族系、シクロヘキサン誘導体等
の脂環族系、さらに次の一般式で示されるエポキシノボ
ラック系等の樹脂が挙げられる。
The (A) epoxy resin used in the present invention is not particularly limited in molecular structure, molecular weight, etc., as long as it is a compound having at least two epoxy groups in the molecule, and widely used resins are widely used. You can Examples thereof include bisphenol type aromatic resins, alicyclic resins such as cyclohexane derivatives, and epoxy novolac resins represented by the following general formula.

(式中、Rは水素原子、ハロゲン原子又はアルキル基
を、Rは水素原子又はアルキル基を、nは1以上の整
数をそれぞれ表す) これらのエポキシ樹脂は単独もしくは2種以上の混合系
として使用する。
(In the formula, R 1 represents a hydrogen atom, a halogen atom or an alkyl group, R 2 represents a hydrogen atom or an alkyl group, and n represents an integer of 1 or more.) These epoxy resins may be used alone or in a mixture of 2 or more kinds. To use as.

本発明に用いる(B)ノボラック型フェノール樹脂とし
ては、フェノール、アルキルフェノール等のフェノール
類と、ホルムアルデヒドあるいはパラホルムアルデヒド
とを反応させて得られるノボラック型フェノール樹脂、
およびこれらの変性樹脂、例えばエポキシ化もしくはブ
チル化ノボラック型フェノール樹脂、シリコーン変性フ
ェノール樹脂等が挙げられ、ノボラック型フェノール樹
脂である限り特に制限なく広く使用することができる。
そして、これらのノボラック型フェノール樹脂は、単独
もしくは2種以上の混合系として使用する。
The novolak type phenolic resin (B) used in the present invention is a novolak type phenolic resin obtained by reacting phenols such as phenol and alkylphenol with formaldehyde or paraformaldehyde,
Further, modified resins thereof, such as epoxidized or butylated novolac type phenolic resin, silicone modified phenolic resin and the like can be mentioned, and they can be widely used without particular limitation as long as they are novolac type phenolic resins.
And these novolac type phenol resins are used individually or as a mixed system of two or more kinds.

本発明に用いる(C)リン酸基を有するオルガノシルコ
ンは次の一般式で示されるものである。
The organosilcon having a phosphate group (C) used in the present invention is represented by the following general formula.

(但し、式中Rはメチル基、フェニル基を、l,m,n
は1以上の整数を表す) l/mの割合は特に限定はされないが、0.01未満ではリ
ン酸基の効果が不充分となり密着性が低下して好ましく
ない。このオルガノシリコンの分子量は60,000以下のも
のが好ましく、これを超えるとオルガノシルコンの分散
が不充分となり好ましくない。リン酸基を有するオルガ
ノシリコンを用いることによって、封止樹脂と半導体チ
ップとの密着性や、封止樹脂とリードフレームとの密着
性が向上し、半田浴に浸漬しても耐湿性の劣化が少な
い。そして特にパッシベーション膜との密着性にも優れ
ている。この密着性の向上は、チップ面積/パッケージ
面積の比が1に近づいた設計標準の場合に有効である。
(However, in the formula, R represents a methyl group or a phenyl group,
Represents an integer of 1 or more) The ratio of 1 / m is not particularly limited, but if it is less than 0.01, the effect of the phosphoric acid group becomes insufficient and the adhesiveness decreases, which is not preferable. The organosilicon preferably has a molecular weight of 60,000 or less, and if it exceeds this range, the organosilcon is not sufficiently dispersed, which is not preferable. By using the organosilicon having a phosphoric acid group, the adhesiveness between the encapsulating resin and the semiconductor chip and the adhesiveness between the encapsulating resin and the lead frame are improved, and the moisture resistance deteriorates even when immersed in a solder bath. Few. It also has excellent adhesion to the passivation film. This improvement in adhesion is effective in the case of a design standard in which the ratio of chip area / package area approaches 1.

本発明に用いる(D)シリカ粉末としては、一般に市販
されているものでもよいが、不純物濃度が低く、平均粒
径の30μm以下のものが好ましい。平均粒径が30μmを
超えると耐湿性および成形性に劣り好ましくない。シリ
カ粉末の配合割合は、樹脂組成物に対して65〜85重量%
の割合で含有することが好ましい。配合量が65重量%未
満では樹脂組成物の吸湿性が大きく、半田浸漬後の耐湿
性に劣り好ましくなく、また85重量%を超えると極端に
流動性が悪くなり、成形性に劣り好ましくない。従って
上記の範囲内に限定される。
The (D) silica powder used in the present invention may be a commercially available one, but it is preferably one having a low impurity concentration and an average particle size of 30 μm or less. If the average particle size exceeds 30 μm, the moisture resistance and the moldability are poor, which is not preferable. The blending ratio of silica powder is 65 to 85% by weight based on the resin composition.
It is preferable to contain it in a ratio of. If the blending amount is less than 65% by weight, the resin composition has large hygroscopicity and is inferior in moisture resistance after solder immersion, and if it exceeds 85% by weight, fluidity is extremely poor and moldability is inferior. Therefore, it is limited to the above range.

本発明の樹脂組成物は、エポキシ樹脂、ノボラック型フ
ェノール樹脂、リン酸基を有するオルガノシリコンおよ
びシリカ粉末を含有するが、必要に応じて例えば天然ワ
ックス類,合成ワックス類,直鎖脂肪酸の金属塩,酸ア
ミド類,エステル類,パラフィン類などの離型剤、三酸
化アンチモンなどの難燃剤、カーボンブラックなどの着
色剤、シランカップリング剤、種々の硬化促進剤等を適
宜添加・配合することができる。
The resin composition of the present invention contains an epoxy resin, a novolac-type phenol resin, an organosilicon having a phosphoric acid group and silica powder, and if necessary, for example, natural waxes, synthetic waxes, metal salts of straight chain fatty acids. , Release agents such as acid amides, esters and paraffins, flame retardants such as antimony trioxide, colorants such as carbon black, silane coupling agents, various curing accelerators, etc. may be appropriately added and blended. it can.

本発明の樹脂組成物を成形材料として調製する場合の一
般的な方法としては、エポキシ樹脂、ノボラック型フェ
ノール樹脂、リン酸基を有するオルガノシリコン、シリ
カ粉末、その他の成分を配合し、ミキサー等によって十
分均一に混合した後、更に熱ロールによる溶融混合処理
又はニーダ等による混合処理を行い、次いで冷却固化さ
せ、適当な大きさに粉砕して成形材料とする。そしてこ
れらの成形材料を電子部品あるいは電気部品の封止、被
覆、絶縁等に適用し、優れた特性と信頼性を付与するこ
とができる。
As a general method for preparing the resin composition of the present invention as a molding material, an epoxy resin, a novolac type phenol resin, an organosilicon having a phosphoric acid group, silica powder, and other components are blended and mixed by a mixer or the like. After sufficiently homogeneously mixing, a melt mixing process using a hot roll or a mixing process using a kneader or the like is further performed, followed by cooling and solidification, and crushing to an appropriate size to obtain a molding material. Then, these molding materials can be applied to the sealing, coating, insulation, etc. of electronic parts or electric parts to impart excellent characteristics and reliability.

(実施例) 以下、本発明の実施例を比較例とともに説明するが、本
発明は以下の実施例に限定されるものではない。
(Examples) Hereinafter, examples of the present invention will be described together with comparative examples, but the present invention is not limited to the following examples.

実施例 第1表に示した組成によって、エポキシ樹脂、ノボラッ
ク型フェノール樹脂、リン酸基を有するオルガノシリコ
ン、シリカ粉末および硬化促進剤、離型剤、シランカッ
プリング剤等を常温で混合し、さらに90〜95℃で混練し
冷却した後、粉砕して成形材料を得た。得られた成形材
料を170℃に加熱した金型内にトランスファー注入し、
硬化させて、封止した成形品をつくった。この成形品に
ついて吸水率、ガラス転移温度および半田浸漬後の耐湿
性を試験したので第1表に示した。本発明の封止用樹脂
組成物から得られた成形品は吸水率が小さく耐湿性に優
れており、本発明の顕著な効果が認められた。
EXAMPLE According to the composition shown in Table 1, epoxy resin, novolac type phenol resin, organosilicon having phosphoric acid group, silica powder and curing accelerator, mold release agent, silane coupling agent, etc. were mixed at room temperature, and The mixture was kneaded at 90 to 95 ° C, cooled, and then pulverized to obtain a molding material. Transfer the obtained molding material into a mold heated to 170 ° C.,
It was cured to make a sealed molding. The molded product was tested for water absorption, glass transition temperature and moisture resistance after solder immersion, and the results are shown in Table 1. The molded product obtained from the encapsulating resin composition of the present invention had a small water absorption rate and excellent moisture resistance, and the remarkable effect of the present invention was confirmed.

比較例1〜2 第1表に示した組成に従い、実施例と同様にして成形材
料を得て、成形品をつくり、実施例と同様に試験した。
その結果を第1表に示した。
Comparative Examples 1 and 2 According to the compositions shown in Table 1, molding materials were obtained in the same manner as in Examples to form molded articles, and the same tests as in Examples were carried out.
The results are shown in Table 1.

実施例および比較例について試験を行った吸水率、ガラ
ス転移温度、半田浸漬後の耐湿性は、次のようにして試
験した。吸水率は、トランスファー成形によって直径50
mm、厚さ3mmの成形品を作成し、これを127℃、2.5気圧
の飽和水蒸気圧中に24時間放置し、増加した重量によっ
て求めた。ガラス転移温度は、吸水率の試験と同じ成形
品を作成し、これを175℃で8時間の後硬化を行い、適
当な大きさのテストピースとし、熱機械分析装置を用い
て測定試験した。また耐湿性は、封止用樹脂組成物を用
いて、2本以上のアルミニウム配線を有するシリコン製
チップ(テスト用素子)を通常の42アロイフレームに接
着し、175℃で2分間トランスファー成形して5×10×
1.5mmのフラットパッケージ型成形品(封止品)を得
て、その後175℃で8時間後硬化を行った。この成形品
を予め40℃,90RH,100時間の吸湿処理をした後、250
℃の半田浴に10秒間浸漬した。次いで127℃,2.5気圧の
飽和水蒸気中でプレッシャー・クッカー・テスト(PC
T)を行い、アルミニウム配線の腐食による断線を不良
と評価して試験を行った。
The water absorption rate, the glass transition temperature, and the moisture resistance after solder immersion, which were tested in Examples and Comparative Examples, were tested as follows. The water absorption rate is 50 by the transfer molding.
A molded product having a thickness of 3 mm and a thickness of 3 mm was prepared, and the molded product was allowed to stand in a saturated steam pressure of 2.5 atm at 127 ° C. for 24 hours, and the weight was increased. The glass transition temperature was measured by using a thermomechanical analyzer by making a molded article which was the same as in the water absorption test and subjecting this to post-curing at 175 ° C. for 8 hours to obtain a test piece of an appropriate size. Moisture resistance is measured by bonding a silicon chip (test element) having two or more aluminum wirings to a normal 42 alloy frame using a sealing resin composition and transfer molding at 175 ° C. for 2 minutes. 5 x 10 x
A 1.5 mm flat package type molded product (sealed product) was obtained and then post-cured at 175 ° C. for 8 hours. This molded product is subjected to moisture absorption treatment at 40 ° C, 90RH, 100 hours in advance, then 250
It was soaked in a solder bath at ℃ for 10 seconds. Next, in a saturated steam at 127 ° C and 2.5 atmospheres, pressure cooker test (PC
T) was performed, and the disconnection due to the corrosion of the aluminum wiring was evaluated as defective, and the test was conducted.

[発明の効果] 以上の説明および第1表からも明らかなように、本発明
の封止用樹脂組成物は、密着性が良いため吸湿の影響が
少なく、半田浴に浸漬した後でも耐湿性に優れ、電極の
腐食による断線や水分によるリーク電流の発生などを著
しく低減することができ、その結果長期間に渡って信頼
性を保証することができる。また250℃以上の半田浴浸
漬にもかかわらず優れた耐熱性を示した。
[Effects of the Invention] As is clear from the above description and Table 1, the encapsulating resin composition of the present invention has good adhesiveness, and therefore has little influence of moisture absorption, and has moisture resistance even after being immersed in a solder bath. In addition, it is possible to remarkably reduce disconnection due to corrosion of electrodes and generation of leak current due to moisture, and as a result, reliability can be guaranteed for a long period of time. It also showed excellent heat resistance despite immersion in a solder bath at 250 ° C or higher.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】(A)エポキシ樹脂 (B)ノボラック型フェノール樹脂 (C)次の一般式で示されるリン酸基を有するオルガノ
シリコンおよび (但し、式中、Rはメチル基、フェニル基、l,m,n
は1以上の整数を表す) (D)シリカ粉末 を含み、全体の樹脂組成物に対して、前記(D)シリカ
粉末を65〜85重量%の割合で含有することを特徴とする
封止用樹脂組成物。
1. (A) Epoxy resin (B) Novolac type phenolic resin (C) Organosilicon having a phosphate group represented by the following general formula and (However, in the formula, R is a methyl group, a phenyl group, 1, m, n
Represents an integer of 1 or more) (D) Silica powder is contained, and the (D) silica powder is contained in a proportion of 65 to 85% by weight with respect to the entire resin composition. Resin composition.
JP27785886A 1986-11-22 1986-11-22 Sealing resin composition Expired - Lifetime JPH0637546B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27785886A JPH0637546B2 (en) 1986-11-22 1986-11-22 Sealing resin composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27785886A JPH0637546B2 (en) 1986-11-22 1986-11-22 Sealing resin composition

Publications (2)

Publication Number Publication Date
JPS63132929A JPS63132929A (en) 1988-06-04
JPH0637546B2 true JPH0637546B2 (en) 1994-05-18

Family

ID=17589262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27785886A Expired - Lifetime JPH0637546B2 (en) 1986-11-22 1986-11-22 Sealing resin composition

Country Status (1)

Country Link
JP (1) JPH0637546B2 (en)

Also Published As

Publication number Publication date
JPS63132929A (en) 1988-06-04

Similar Documents

Publication Publication Date Title
JP2892433B2 (en) Sealing resin composition and semiconductor sealing device
JPH0637546B2 (en) Sealing resin composition
JPH07242733A (en) Epoxy resin composition and sealed semiconductor device
JPH04236215A (en) Sealing resin composition and sealed semiconductor device
JP2661000B2 (en) Resin composition for sealing
JPH08245754A (en) Epoxy resin composition and sealed semiconductor device
JPS63110212A (en) Sealing resin composition
JPH083277A (en) Epoxy resin composition and sealed semiconductor device
JPH0819214B2 (en) Sealing resin composition
JPH051210A (en) Sealing resin composition and semiconductor-sealing device
JPH059265A (en) Sealing resin composition and semiconductor-sealing apparatus
JPH0665357A (en) Epoxy resin composition and semiconductor device
JPH07138345A (en) Epoxy resin composition and sealed semiconductor device
JPH0570562A (en) Resin composition for sealing and sealed semiconductor device
JPH1171445A (en) Epoxy resin composition and semiconductor device sealed therewith
JPH07188387A (en) Epoxy resin composition and semi-conductor sealing device
JPH0753669A (en) Epoxy resin composition and sealed semiconductor device
JPH07242730A (en) Epoxy resin composition and sealed semiconductor device
JPH07278263A (en) Epoxy resin composition and sealed semiconductor device
JPH08217956A (en) Epoxy resin composition and sealed semiconductor device
JPH06228273A (en) Epoxy resin composition and sealed semiconductor device
JPH06239968A (en) Epoxy resin composition and sealed semiconductor device
JPH09216935A (en) Epoxy resin composition and sealed semiconductor device
JPH06145308A (en) Epoxy resin composition and semiconductor device sealed therewith
JPH06239970A (en) Epoxy resin composition and sealed semiconductor device