JPH083277A - Epoxy resin composition and sealed semiconductor device - Google Patents

Epoxy resin composition and sealed semiconductor device

Info

Publication number
JPH083277A
JPH083277A JP15912594A JP15912594A JPH083277A JP H083277 A JPH083277 A JP H083277A JP 15912594 A JP15912594 A JP 15912594A JP 15912594 A JP15912594 A JP 15912594A JP H083277 A JPH083277 A JP H083277A
Authority
JP
Japan
Prior art keywords
resin
epoxy resin
resin composition
inorganic filler
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15912594A
Other languages
Japanese (ja)
Inventor
Toshiki Aoki
利樹 青木
Ayako Sawada
綾子 澤田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Chemical Corp
Original Assignee
Toshiba Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Chemical Corp filed Critical Toshiba Chemical Corp
Priority to JP15912594A priority Critical patent/JPH083277A/en
Publication of JPH083277A publication Critical patent/JPH083277A/en
Pending legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To provide a sealed semiconductor device having high reliability in immersion in a solder by using a sealing material comprising a specific epoxy resin, a specific phenolic resin, an inorganic filler, and a curing accelerator as essential components. CONSTITUTION:A blend of an epoxy resin (A) represented by formula I and a phenolic resin (B) represented by formula II (wherein (n) is 0 or a larger number) is mixed with 25-95wt.% inorganic filler (C) and a curing accelerator (D) to produce a sealing resin. An example of the resin (B) is the one represented by formula III. The filler (C) is preferably a silica powder having an average particle diameter of 30mum or smaller. The sealed semiconductor device is obtained by applying the sealing resin to a semiconductor chip and thermally curing the resin. The cured resin does not develop cracks through immersion in a solder or solder reflowing and is reduced in deterioration caused by moisture.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、耐湿性、半田耐熱性に
優れたエポキシ樹脂組成物および半導体封止装置に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition having excellent moisture resistance and solder heat resistance, and a semiconductor encapsulation device.

【0002】[0002]

【従来の技術】近年、半導体集積回路の分野において、
高集積化、高信頼性化の技術開発と同時に半導体装置の
実装工程の自動化が推進されている。例えばフラットパ
ッケージ型の半導体装置を回路基板に取り付ける場合
に、従来、リードピン毎に半田付けを行っていたが、最
近では半田浸漬方式や半田リフロー方式が採用されてい
る。
2. Description of the Related Art In recent years, in the field of semiconductor integrated circuits,
At the same time as technology development for high integration and high reliability, automation of the mounting process of semiconductor devices is being promoted. For example, when mounting a flat package type semiconductor device on a circuit board, conventionally, soldering is performed for each lead pin, but recently, a solder dipping method or a solder reflow method has been adopted.

【0003】[0003]

【発明が解決しようとする課題】従来のノボラック型エ
ポキシ樹脂等のエポキシ樹脂、ノボラック型フェノール
樹脂およびシリカ粉末からなる樹脂組成物によって封止
した半導体装置は、装置全体の半田浴浸漬を行うと耐湿
性が低下するという欠点があった。特に吸湿した半導体
装置を浸漬すると、封止樹脂と半導体チップ、あるいは
封止樹脂とリードフレームとの間の剥がれや、内部樹脂
クラックが生じて著しい耐湿性劣化を起こし、電極の腐
蝕による断線や水分によるリーク電流を生じ、その結
果、半導体装置は、長期間の信頼性を保証することがで
きないという欠点があった。
A semiconductor device sealed with a conventional resin composition comprising an epoxy resin such as a novolac type epoxy resin, a novolac type phenolic resin and silica powder has a moisture resistance when the entire device is immersed in a solder bath. There was a drawback that the property deteriorated. In particular, when a semiconductor device that has absorbed moisture is dipped, peeling between the encapsulating resin and the semiconductor chip, or the encapsulating resin and the lead frame, and internal resin cracking cause significant deterioration in moisture resistance, causing disconnection and moisture due to electrode corrosion. As a result, there is a drawback that a semiconductor device cannot guarantee long-term reliability.

【0004】本発明は、上記の欠点を解消するためにな
されたもので、吸湿の影響が少なく、特に半田浴浸漬後
の耐湿性、半田耐熱性に優れ、封止樹脂と半導体チップ
あるいは封止樹脂とリードフレームの間の剥がれや、内
部樹脂クラックの発生がなく、また電極の腐蝕による断
線や水分によるリーク電流の発生もなく、長期信頼性を
保証できるエポキシ樹脂組成物および半導体封止装置を
提供しようとするものである。
The present invention has been made in order to solve the above-mentioned drawbacks, has little influence of moisture absorption, and is particularly excellent in moisture resistance and solder heat resistance after being immersed in a solder bath. Epoxy resin composition and semiconductor encapsulation device capable of ensuring long-term reliability without peeling between resin and lead frame, generation of internal resin cracks, disconnection due to electrode corrosion and leakage current due to moisture. It is the one we are trying to provide.

【0005】[0005]

【課題を解決するための手段】本発明者らは、上記の目
的を達成しようと鋭意研究を重ねた結果、特定のエポキ
シ樹脂、特定のフェノール樹脂を用いることによって、
耐湿性、半田耐熱性等に優れた樹脂組成物が得られるこ
とを見いだし、本発明を完成したものである。
Means for Solving the Problems As a result of intensive studies to achieve the above object, the present inventors have found that by using a specific epoxy resin and a specific phenol resin,
It was found that a resin composition excellent in moisture resistance, solder heat resistance, etc. can be obtained, and the present invention has been completed.

【0006】即ち、本発明は、(A)次の一般式で示さ
れるエポキシ樹脂、
That is, the present invention provides (A) an epoxy resin represented by the following general formula:

【0007】[0007]

【化5】 (B)次の一般式で示されるフェノール樹脂、Embedded image (B) a phenolic resin represented by the following general formula,

【0008】[0008]

【化6】 (但し、式中n は0 又は1 以上の整数を表す) (C)無機質充填剤および(D)硬化促進剤を必須成分
とし、全体の樹脂組成物に対して前記(C)の無機質充
填剤を25〜95重量%の割合で含有してなることを特徴と
するエポキシ樹脂組成物である。また、このエポキシ樹
脂組成物の硬化物によって、半導体チップが封止されて
なることを特徴とする半導体封止装置である。
[Chemical 6] (However, in the formula, n represents 0 or an integer of 1 or more) (C) The inorganic filler and (D) the curing accelerator are essential components, and the inorganic filler of the above (C) is added to the entire resin composition. Is contained in a proportion of 25 to 95% by weight. A semiconductor encapsulation device is obtained by encapsulating a semiconductor chip with a cured product of this epoxy resin composition.

【0009】以下、本発明を詳細に説明する。The present invention will be described in detail below.

【0010】本発明に用いる(A)エポキシ樹脂は、前
記の一般式化5で示されるもののエポキシ樹脂が使用さ
れる。また、このエポキシ樹脂には、ノボラック系エポ
キシ樹脂、エピビス系エポキシ樹脂やビフェニル系エポ
キシ樹脂、その他の公知のエポキシ樹脂を併用すること
ができる。
As the epoxy resin (A) used in the present invention, the epoxy resin represented by the above general formula 5 is used. Further, a novolac-based epoxy resin, an epibis-based epoxy resin, a biphenyl-based epoxy resin, and other known epoxy resins can be used in combination with this epoxy resin.

【0011】本発明に用いる(B)フェノール樹脂とし
ては、前記の一般式化6で示されるものが使用され、そ
の分子量等に特に制限されることなく使用することがで
きる。具体的な化合物として例えば
As the (B) phenol resin used in the present invention, the one represented by the above general formula 6 is used, and it can be used without being particularly limited by its molecular weight and the like. As a specific compound, for example,

【0012】[0012]

【化7】 [Chemical 7]

【0013】[0013]

【化8】 等が挙げられ、これらは単独又は混合して使用すること
ができる。また、このフェノール樹脂には、フェノー
ル、アルキルフェノール等のフェノール類とホルムアル
デヒドあるいはパラホルムアルデヒドとを反応させて得
られるノボラック型フェノール樹脂およびこれらの変性
樹脂を併用することができる。
Embedded image Etc., and these can be used alone or in combination. Further, a novolak type phenol resin obtained by reacting phenols such as phenol and alkylphenol with formaldehyde or paraformaldehyde, and modified resins thereof can be used in combination with this phenol resin.

【0014】本発明に用いる(C)無機質充填剤として
は、一般に使用されているものが広く使用されるが、そ
れらの中でも不純物濃度が低く、平均粒径30μm 以下の
シリカ粉末が好ましく使用される。平均粒径30μm を超
えると耐湿性および成形性が劣り好ましくない。無機質
充填剤の配合割合は、全体の樹脂組成物に対して25〜95
重量%含有するように配合することか好ましい。その割
合が25重量%未満では樹脂組成物の吸湿性が高く、半田
浸漬後の耐湿性に劣り、また95重量%を超えると極端に
流動性が悪くなり、成形性に劣り好ましくない。
As the inorganic filler (C) used in the present invention, those generally used are widely used. Among them, silica powder having a low impurity concentration and an average particle diameter of 30 μm or less is preferably used. . If the average particle size exceeds 30 μm, the moisture resistance and the moldability are deteriorated, which is not preferable. The blending ratio of the inorganic filler is 25 to 95 with respect to the entire resin composition.
It is preferable to mix them so as to contain them by weight. If the proportion is less than 25% by weight, the resin composition has a high hygroscopicity and is inferior in moisture resistance after solder immersion, and if it exceeds 95% by weight, the fluidity is extremely poor and the moldability is inferior, which is not preferable.

【0015】本発明に用いる(D)硬化促進剤として
は、リン系硬化促進剤、イミダゾール系硬化促進剤、D
BU系硬化促進剤その他の硬化促進剤等を広く使用する
ことができる。これらは単独又は2 種以上併用すること
ができる。硬化促進剤の配合割合は、全体の樹脂組成物
に対して0.01〜5 重量%含有するように配合することが
望ましい。その割合が0.01重量%未満では樹脂組成物の
ゲルタイムが長く、硬化特性も悪くなり、また、5 重量
%を超えると極端に流動性が悪くなって成形性に劣り、
さらに電気特性も悪くなり耐湿性に劣り好ましくない。
As the curing accelerator (D) used in the present invention, a phosphorus curing accelerator, an imidazole curing accelerator, D
A wide range of BU-based curing accelerators and other curing accelerators can be used. These can be used alone or in combination of two or more kinds. It is desirable that the curing accelerator is blended in an amount of 0.01 to 5% by weight based on the total resin composition. If the proportion is less than 0.01% by weight, the gel time of the resin composition will be long and the curing characteristics will be poor, and if it exceeds 5% by weight, the fluidity will be extremely poor and the moldability will be poor.
Furthermore, the electrical characteristics are poor and the moisture resistance is poor, which is not preferable.

【0016】本発明のエポキシ樹脂組成物は、前述した
特定のエポキシ樹脂、特定のフェノール樹脂、無機質充
填剤および硬化促進剤を必須成分とするが、本発明の目
的に反しない限度において、また必要に応じて、例えば
天然ワックス類、合成ワックス類、直鎖脂肪酸の金属
塩、酸アミド類、エステル類、パラフィン類等の離型
剤、三酸化アンチモン等の難燃剤、カーボンブラック等
の着色剤、シランカップリング剤、ゴム系やシリコーン
系の低応力付与剤等を適宜添加配合することができる。
The epoxy resin composition of the present invention contains the above-mentioned specific epoxy resin, specific phenolic resin, inorganic filler and curing accelerator as essential components, but it is also necessary as long as the object of the present invention is not impaired. Depending on, for example, natural waxes, synthetic waxes, metal salts of straight chain fatty acids, acid amides, esters, release agents such as paraffins, flame retardants such as antimony trioxide, colorants such as carbon black, A silane coupling agent, a rubber-based or silicone-based low stress imparting agent, and the like can be appropriately added and blended.

【0017】本発明のエポキシ樹脂組成物を成形材料と
して調製する場合の一般的方法は、前述した特定のエポ
キシ樹脂、特定のフェノール樹脂、無機質充填剤および
硬化促進剤その他の成分を配合し、ミキサー等によって
十分均一に混合した後、さらに熱ロールによる溶融混合
処理またはニーダ等による混合処理を行い、次いで冷却
固化させ適当な大きさに粉砕して成形材料とすることが
できる。こうして得られた成形材料は、半導体装置をは
じめとする電子部品或いは電気部品の封止・被覆・絶縁
等に適用すれば優れた特性と信頼性を付与させることが
できる。
A general method for preparing the epoxy resin composition of the present invention as a molding material is to mix the above-mentioned specific epoxy resin, specific phenolic resin, inorganic filler, curing accelerator and other components with a mixer. After sufficiently uniform mixing by means such as the like, melt-mixing treatment with a hot roll or mixing treatment with a kneader etc. is further performed, followed by cooling and solidifying and pulverizing to an appropriate size to obtain a molding material. When the molding material thus obtained is applied to sealing, coating, insulation, etc. of electronic parts or electric parts such as semiconductor devices, excellent properties and reliability can be imparted.

【0018】また、本発明の半導体封止装置は、上述の
成形材料を用いて半導体チップを封止することにより容
易に製造することができる。封止を行う半導体チップと
しては、例えば集積回路、大規模集積回路、トランジス
タ、サイリスタ、ダイオード等で特に限定されるもので
はない。封止の最も一般的な方法としては、低圧トラン
スファー成形法があるが、射出成形、圧縮成形、注形等
による封止も可能である。成形材料で封止後加熱して硬
化させ、最終的にはこの硬化物によって封止された半導
体封止装置が得られる。加熱による硬化は、150 ℃以上
に加熱して硬化させることが望ましい。
The semiconductor encapsulation device of the present invention can be easily manufactured by encapsulating a semiconductor chip using the above molding material. The semiconductor chip to be sealed is not particularly limited to, for example, an integrated circuit, a large scale integrated circuit, a transistor, a thyristor, a diode and the like. The most common method of sealing is a low-pressure transfer molding method, but sealing by injection molding, compression molding, casting or the like is also possible. After sealing with a molding material, it is heated and cured, and finally a semiconductor sealing device sealed with this cured product is obtained. For curing by heating, it is desirable to heat and cure at 150 ° C or higher.

【0019】[0019]

【作用】本発明のエポキシ樹脂組成物および半導体封止
装置は、特定のエポキシ樹脂、特定のフェノール樹脂を
用いることによって、樹脂組成物の吸水性を低減し、機
械的特性と低応力性が向上し、半田浸漬、半田リフロー
後の樹脂クラックの発生がなくなり、耐湿性劣化が少な
くなるものである。
The epoxy resin composition and semiconductor encapsulation device of the present invention use a specific epoxy resin and a specific phenol resin to reduce the water absorption of the resin composition and improve the mechanical properties and low stress. However, the occurrence of resin cracks after solder immersion and solder reflow is eliminated, and the deterioration of moisture resistance is reduced.

【0020】[0020]

【実施例】次に本発明を実施例によって説明するが、本
発明はこれらの実施例によって限定されるものではな
い。以下の実施例および比較例において「%」とは「重
量%」を意味する。
EXAMPLES Next, the present invention will be described with reference to examples, but the present invention is not limited to these examples. In the following examples and comparative examples, “%” means “% by weight”.

【0021】実施例1 前述した化5のエポキシ樹脂8.9 %、前述した化7のフ
ェノール樹脂8.1 %、シリカ粉末82%、硬化促進剤 0.3
%、エステルワックス類 0.3%およびシランカップリン
グ剤 0.4%を常温で混合し、さらに90〜95℃で混練冷却
した後、粉砕して成形材料(A)を製造した。
Example 1 8.9% of the above-mentioned epoxy resin of Chemical formula 5, 8.1% of the above-mentioned phenolic resin of Chemical formula 7, 82% of silica powder, 0.3% of curing accelerator
%, Ester waxes 0.3% and silane coupling agent 0.4% were mixed at room temperature, further kneaded and cooled at 90 to 95 ° C., and then pulverized to produce a molding material (A).

【0022】実施例2 実施例1で用いたと同じ化5のエポキシ樹脂4.7 %、実
施例1で用いた化7のフェノール樹脂4.3 %、シリカ粉
末90%、硬化促進剤 0.3%、エステルワックス類 0.3%
およびシランカップリング剤 0.4%を常温で混合し、さ
らに90〜95℃で混練冷却した後、粉砕して成形材料
(B)を製造した。
Example 2 The same epoxy resin of Chemical formula 5 used in Example 1 (4.7%), the phenol resin of Chemical formula 7 used in Example 1 (4.3%), silica powder 90%, curing accelerator 0.3%, ester waxes 0.3 %
And 0.4% of a silane coupling agent were mixed at room temperature, further kneaded and cooled at 90 to 95 ° C., and then pulverized to produce a molding material (B).

【0023】比較例1 o-クレゾールノボラック型エポキシ樹脂17%、ノボラッ
ク型フェノール樹脂 8%、シリカ粉末74%、硬化促進剤
0.3%、エステルワックス類 0.3%およびシランカップ
リング剤 0.4%を常温で混合し、さらに90〜95℃で混練
冷却した後、粉砕して成形材料(C)を製造した。
Comparative Example 1 o-Cresol novolac type epoxy resin 17%, novolac type phenol resin 8%, silica powder 74%, curing accelerator
0.3%, ester waxes 0.3%, and silane coupling agent 0.4% were mixed at room temperature, further kneaded and cooled at 90 to 95 ° C., and then pulverized to produce a molding material (C).

【0024】比較例2 エピビス型エポキシ樹脂20%、ノボラック型フェノール
樹脂 5%、シリカ粉末74%、硬化促進剤 0.3%、エステ
ルワックス類 0.3%およびシランカップリング剤 0.4%
を常温で混合し、さらに90〜95℃で混練冷却した後、粉
砕して成形材料(D)を製造した。
Comparative Example 2 20% epibis type epoxy resin, 5% novolak type phenol resin, 74% silica powder, 0.3% curing accelerator, 0.3% ester waxes and 0.4% silane coupling agent.
Was mixed at room temperature, further kneaded and cooled at 90 to 95 ° C., and then pulverized to produce a molding material (D).

【0025】こうして製造した成形材料(A)〜(D)
を用いて 170℃に加熱した金型内にトランスファー注
入、半導体チップを封止し硬化させて半導体封止装置を
製造した。これらの半導体封止装置について、諸試験を
行ったのでその結果を表1に示したが、本発明のエポキ
シ樹脂組成物および半導体封止装置は、耐湿性、半田耐
熱性に優れており、本発明の顕著な効果を確認すること
ができた。
Molding materials (A) to (D) thus produced
Was used to transfer transfer into a mold heated to 170 ° C., and the semiconductor chip was sealed and cured to manufacture a semiconductor sealing device. Various tests were conducted on these semiconductor encapsulation devices, and the results are shown in Table 1. The epoxy resin composition and the semiconductor encapsulation device of the present invention are excellent in moisture resistance and solder heat resistance. The remarkable effect of the invention could be confirmed.

【0026】[0026]

【表1】 *1 :トランスファー成形によって直径50mm、厚さ3mm
の成形品を作り、これを127 ℃, 2.5気圧の飽和水蒸気
中に24時間放置し、増加した重量によって測定した。 *2 :吸水率の場合と同様な成形品を作り、175 ℃,8
時間の後硬化を行い、適当な大きさの試験片とし、熱機
械分析装置を用いて測定した。 *3 :JIS−K−6911に準じて試験した。 *4 :成形材料を用いて、2 本以上のアルミニウム配線
を有するシリコン製チップを、通常の42アロイフレーム
に接着し、175 ℃,2 分間トランスファー成形した後、
175 ℃,8 時間の後硬化を行った。こうして得た成形品
を、予め40℃,95%RH,100 時間の吸湿処理した後、
250 ℃の半田浴に10秒間浸漬した。その後、127 ℃,
2.5気圧の飽和水蒸気中でPCTを行い、アルミニウム
の腐蝕による50%断線を不良として評価した。 *5 :8 ×8mm ダミーチップをQFP(14×14× 1.4m
m)パッケージに納め、成形材料を用いて175 ℃,2 分
間トランスファー成形した後、175 ℃,8 時間の後硬化
を行った。こうして得た半導体封止装置を85℃,85%,
24時間の吸湿処理した後、240 ℃の半田浴に 1分間浸漬
した。その後、実体顕微鏡でパッケージ表面を観察し、
外部樹脂クラックの発生の有無を評価した。
[Table 1] * 1: Diameter 50 mm, thickness 3 mm by transfer molding
A molded article of the above was prepared, and the molded article was allowed to stand in saturated steam at 127 ° C. and 2.5 atm for 24 hours and measured by the increased weight. * 2: Make a molded product similar to the case of water absorption, 175 ℃, 8
After post-curing for a certain time, a test piece of an appropriate size was prepared and measured using a thermomechanical analyzer. * 3: Tested according to JIS-K-6911. * 4: Using a molding material, attach a silicon chip with two or more aluminum wirings to a normal 42 alloy frame and transfer mold at 175 ° C for 2 minutes.
Post-curing was performed at 175 ° C for 8 hours. The molded product thus obtained is subjected to moisture absorption treatment at 40 ° C., 95% RH for 100 hours in advance, and then
It was immersed in a solder bath at 250 ° C for 10 seconds. After that, 127 ℃,
PCT was performed in saturated steam of 2.5 atm and 50% disconnection due to corrosion of aluminum was evaluated as defective. * 5: QFP (14 × 14 × 1.4m) with 8 × 8mm dummy chip
m) It was placed in a package, transfer molding was performed for 2 minutes at 175 ° C using the molding material, and then post-curing was performed at 175 ° C for 8 hours. The semiconductor encapsulation device obtained in this way is 85 ℃, 85%,
After absorbing moisture for 24 hours, it was immersed in a solder bath at 240 ° C for 1 minute. After that, observe the package surface with a stereomicroscope,
The occurrence of external resin cracks was evaluated.

【0027】[0027]

【発明の効果】以上の説明および表1から明らかなよう
に、本発明のエポキシ樹脂組成物および半導体封止装置
は、耐湿性、半田耐熱性に優れ、吸湿による影響が少な
く、電極の腐蝕による断線や水分によるリーク電流の発
生等を著しく低減することができ、しかも長期間にわた
って信頼性を保証することができる。
As is clear from the above description and Table 1, the epoxy resin composition and the semiconductor encapsulation device of the present invention have excellent moisture resistance and solder heat resistance, are less affected by moisture absorption, and are not affected by electrode corrosion. It is possible to remarkably reduce the generation of leakage current due to disconnection and moisture, and it is possible to guarantee the reliability for a long period of time.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 (A)次の一般式に示されるエポキシ樹
脂、 【化1】 (B)次の一般式で示されるフェノール樹脂、 【化2】 (但し、式中n は0 又は1 以上の整数を表す) (C)無機質充填剤および(D)硬化促進剤を必須成分
とし、全体の樹脂組成物に対して前記(C)の無機質充
填剤を25〜95重量%の割合で含有してなることを特徴と
するエポキシ樹脂組成物。
1. An epoxy resin represented by the following general formula (A): (B) A phenolic resin represented by the following general formula: (However, in the formula, n represents 0 or an integer of 1 or more) (C) The inorganic filler and (D) the curing accelerator are essential components, and the inorganic filler of the above (C) is added to the entire resin composition. 25 to 95% by weight of the epoxy resin composition.
【請求項2】 (A)次の一般式で示されるエポキシ樹
脂、 【化3】 (B)次の一般式で示されるフェノール樹脂、 【化4】 (但し、式中n は0 又は1 以上の整数を表す) (C)無機質充填剤および(D)硬化促進剤を必須成分
とし、全体の樹脂組成物に対して前記(C)の無機質充
填剤を25〜95重量%の割合で含有したエポキシ樹脂組成
物の硬化物によって、半導体チップが封止されてなるこ
とを特徴とする半導体封止装置。
2. An epoxy resin represented by the following general formula (A): (B) A phenolic resin represented by the following general formula: (However, in the formula, n represents 0 or an integer of 1 or more) (C) The inorganic filler and (D) the curing accelerator are essential components, and the inorganic filler of the above (C) is added to the entire resin composition. A semiconductor encapsulation device, wherein a semiconductor chip is encapsulated with a cured product of an epoxy resin composition containing 25 to 95% by weight of.
JP15912594A 1994-06-17 1994-06-17 Epoxy resin composition and sealed semiconductor device Pending JPH083277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15912594A JPH083277A (en) 1994-06-17 1994-06-17 Epoxy resin composition and sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15912594A JPH083277A (en) 1994-06-17 1994-06-17 Epoxy resin composition and sealed semiconductor device

Publications (1)

Publication Number Publication Date
JPH083277A true JPH083277A (en) 1996-01-09

Family

ID=15686789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15912594A Pending JPH083277A (en) 1994-06-17 1994-06-17 Epoxy resin composition and sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPH083277A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001279064A (en) * 2000-03-31 2001-10-10 Toray Ind Inc Epoxy resin composition for semiconductor sealing
JP2001288338A (en) * 2000-04-10 2001-10-16 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001279064A (en) * 2000-03-31 2001-10-10 Toray Ind Inc Epoxy resin composition for semiconductor sealing
JP2001288338A (en) * 2000-04-10 2001-10-16 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device

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