JP2001279064A - Epoxy resin composition for semiconductor sealing - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a resin composition for semiconductor sealing excellent in reliability of crack resistance to soldering, peeling resistance, etc., and moldability such as fluidity in molding, curing properties and mold release properties from a mold. SOLUTION: This epoxy resin composition for semiconductor sealing comprises (A) an epoxy resin, (B) a phenolic curing agent and (C) inorganic filler. The epoxy resin composition is characterized in that the epoxy resin (A) comprises an epoxy resin (a) having a structure having two or more epoxy groups and having two aromatic rings between two epoxy groups and having oxygen or sulfur atom between two aromatic rings and the phenolic curing agent (B) comprises a phenol compound (b) having two or more aromatic groups to which hydroxyl groups are directly bonded and an alicyclic group is disposed between the aromatic groups as an essential component.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an epoxy resin composition for semiconductor encapsulation used for encapsulating a semiconductor device. More specifically, an epoxy resin composition for semiconductor encapsulation in which cracks are prevented from occurring in the encapsulating resin in a soldering step when mounting the resin-encapsulated semiconductor device,
In particular, the present invention relates to an epoxy resin composition for semiconductor encapsulation having excellent moisture resistance reliability and moldability (fluidity, curability).

[0002]

2. Description of the Related Art Epoxy resins are excellent in heat resistance, moisture resistance, electrical properties and adhesiveness, and can be imparted with various properties by compounding and prescription. Therefore, they are used as industrial materials such as paints, adhesives and electrical insulating materials. It's being used.

For example, as a method of sealing an electronic circuit component such as a semiconductor device, a hermetic seal made of metal or ceramics and a resin seal made of phenol resin, silicone resin, epoxy resin or the like have been conventionally proposed. In this regard, resin sealing with an epoxy resin is mainly used in terms of balance between economy, productivity, and physical properties.

On the other hand, in recent years, the density and automation of component mounting on a printed circuit board have been advanced, and instead of the conventional "insertion mounting method" in which lead pins are inserted into holes in the board, components are soldered on the surface of the board. “Surface mounting method” has become popular.

[0005] Along with this, the package is also a conventional DIP
(Dual in-line package) to thin FPP (flat plastic package) suitable for high-density mounting and surface mounting.

[0006] With the shift to the surface mounting method, the soldering process, which has not been a problem so far, has become a serious problem.

That is, in the conventional pin insertion mounting method,
In the soldering process, the leads are only partially heated, but in the surface mounting method, the entire package is immersed in a heating medium and heated. As a soldering method in the surface mounting method, a solder bath immersion, heating by a saturated vapor of an inert gas (a vapor phase method), an infrared reflow method, or the like is used.
Since the package is heated to a high temperature of 0 to 270 ° C., in a package sealed with a conventional sealing resin, cracks occur in the resin portion at the time of soldering, and peeling occurs between the chip and the resin. In other words, there is a problem that the reliability deteriorates and the product cannot be used.

The occurrence of cracks in the soldering process
It is said that the moisture absorbed between post-curing and the mounting process explosively turns into steam and expands during soldering and heating.As a countermeasure, the post-cured package must be completely dried. A method of shipping in a sealed container is used.

However, the method of enclosing the dry package in a container has disadvantages in that the manufacturing process and the handling of the product are complicated and the product price is high.

As a method of sealing with an epoxy resin, a composition in which a curing agent and an inorganic filler are mixed with an epoxy resin is used, a semiconductor element is set in a mold, and sealed with a low-pressure transfer molding machine. The method is commonly used.

The molding machine used is also changing from a conventional conventional system to a multi-plunger system with the recent trend toward thinner and smaller packages and automatic molding. Here, the conventional method is a method of molding a large number of packages in one pot at a time and has excellent moldability, whereas the multi-plunger method is a method in which 1-2 packages are basically formed in one pot. Although it can be automated, it is inferior to the conventional method in terms of productivity.

However, along with the shift of the molding method, the required characteristics of the moldability of the resin composition are becoming more severe. Specifically, the demand for thinner and smaller packages requires more fluidity than before, and from the viewpoint of automation and productivity, it has excellent curability, mold release properties and low flash during molding. Gender has become quite demanding.

Further, when the resin-sealed semiconductor device is left in a high-temperature and high-humidity environment with the miniaturization of the aluminum wiring in accordance with the high integration of the package, the sealing resin itself or the sealing resin and the lead frame are removed. Higher performance has also been required for the performance of preventing breakdown of the semiconductor due to the intrusion of moisture through the interface with the semiconductor, that is, the humidity resistance reliability.

Based on this situation, various studies have been made on improvements in epoxy resin compositions for semiconductor encapsulation. For example, a method of blending a styrene-based block copolymer rubber or a silicone rubber using a biphenyl-type epoxy resin as an epoxy resin (Japanese Patent Application Laid-Open No. 63-251419),
A method using a biphenyl type epoxy resin as an epoxy resin and silica having a specific particle size as a filler (Japanese Patent Laid-Open No. 1-87)
616), a method in which a biphenyl type epoxy resin is used as an epoxy resin and a phenol aralkyl resin is used as a curing agent, and a filler is blended in an amount of 86 to 95% by weight (JP-A-6-80)
No. 763) has been proposed.

However, recently, surface mount type IC packages have been further developed, and the number of pins, thickness, size, and performance have been increasing. That is, I for memory use
SOP (Small Outline /
Package) and TSOP (Thin Small Outline Package), with the increasing functionality of IC chips, the need for thinner and smaller IC packages despite the increase in the size and number of pins of IC chips. ing. Also, the material of the lead frame is changing from iron-based 42 alloy to copper. Further, area array type packages such as BGA (ball grid array) and CSP (chip size package) have also appeared.

[0016]

In view of such circumstances, the problems to be solved by the present invention are reliability such as solder crack resistance and peeling resistance, and fluidity and curability during molding. An object of the present invention is to provide a resin composition for semiconductor encapsulation having excellent moldability such as mold releasability from a mold.

[0017]

Means for Solving the Problems The inventors of the present invention have studied to solve the present problem, and as a result, have reached the present invention. That is, the present invention mainly has the following configuration. That is,
"An epoxy resin composition containing an epoxy resin (A), a phenolic curing agent (B), and an inorganic filler (C), wherein the epoxy resin (A) has two epoxy groups.
Containing epoxy resin (a) having two or more aromatic rings between two epoxy groups and having an oxygen or sulfur atom between the two aromatic rings And a phenolic compound (b) in which the phenolic curing agent (B) has two or more aromatic groups having a hydroxyl group directly bonded and an alicyclic group is interposed between the aromatic groups as an essential component. An epoxy resin composition for encapsulating a semiconductor, characterized by comprising: "A method of manufacturing a semiconductor device, comprising sealing a semiconductor element with the epoxy resin composition for semiconductor sealing described in any of the above." And "A semiconductor sealing described in any of the above." A semiconductor device characterized in that a semiconductor element is sealed with an epoxy resin composition for stopping. "

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The configuration of the present invention will be described below in detail.
In the present invention, “weight” means “mass”.

The epoxy resin (A) in the present invention has two or more epoxy groups, has two aromatic rings between the two epoxy groups, and has two aromatic rings between the two epoxy groups. Contains an epoxy resin (a) having a structure having an oxygen or sulfur atom. The hydrogen atom bonded to the aromatic ring may be substituted by a monovalent organic group, and preferred examples of the substituent include a methyl group, an ethyl group, a propyl group, a butyl group, an acryl group, a methacryl group and the like. Can be mentioned. Preferred examples thereof include a compound represented by the formula (I), and more preferably, a compound represented by the formula (I-1).

[0020]

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[0021]

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In the epoxy resins represented by the above formulas (I) and (I-1), X is an oxygen or sulfur atom, and the hydrogen atom bonded to the aromatic ring is partially or wholly one.
It may be substituted with a valent organic group. The number of carbon atoms in the organic group is preferably in the range of 1 to 10. Preferred examples of the substituent include a methyl group, an ethyl group, a propyl group, a butyl group, an acryl group, and a methacryl group. Among the epoxy resins represented by the formulas (I) and (I-1), those polymerized by an addition reaction of an epoxy group can also be used.

In the present invention, the amount of the epoxy resin (A) is not particularly limited, but is usually 2 to 15% by weight, preferably 2 to 10% by weight, more preferably 2 to 8% by weight.
It is. Further, the epoxy resin (a) having the features of the present invention preferably contains 50% by weight or more, and more preferably 70% by weight or more in the epoxy resin (A) in order to sufficiently exhibit its effects.

The phenolic curing agent (B) used in the present invention reacts with the epoxy resin (A) to cure, and usually has two or more phenolic hydroxyl groups. Specific examples thereof include, for example, a phenol novolak resin, a cresol novolak resin, a phenol aralkyl resin represented by the following formula,

[0025]

Embedded image

[0026]

Embedded image (In the above formulas, n is an integer of 0 or more.) A phenol compound having two or more aromatic groups directly linked to a hydroxyl group and an alicyclic group interposed between the aromatic groups, bisphenol A or resorcinol Various polyphenol compounds such as various novolak resins and polyvinyl phenol synthesized from phenol are exemplified.

In the present invention, a phenol compound (b) having two or more aromatic groups directly linked to a hydroxyl group and an alicyclic group interposed between the aromatic groups is contained as an essential component. I do. The specific chemical structure is a phenol compound having a skeleton represented by the following chemical formula (II).

[0028]

Embedded image Further, a compound obtained by polyaddition of the phenolic compound of the formula (II) with an aldehyde, particularly formaldehyde, via a methylene group or the like can also be used.

Depending on the use of the present invention, two or more curing agents may be used in combination. Further, from the viewpoint of the fluidity of the sealant, the melt viscosity of the phenolic curing agent is 6 poise (6 Pa · s) or less and 4 poise (4 Pa · s) in ICI (150 ° C.) viscosity.
Below, 2 poise (2 Pa · s) or less is preferably used.

In the present invention, other epoxy resin curing agents can be blended in addition to the phenolic curing agent. For example, acid anhydrides such as maleic anhydride, phthalic anhydride, and pyromellitic anhydride, and aromatic diamines such as metaphenylenediamine, diaminodiphenylmethane, and diaminodiphenylsulfone are included.

In the present invention, the compounding amount of the phenolic curing agent (B) is usually 2 to 15% by weight, preferably 2 to 15% by weight.
It is 10% by weight, more preferably 2 to 8% by weight. The amount of the phenolic curing agent (b) having the characteristics of the present invention is at least 30% by weight in the phenolic curing agent (B).
Further, it is preferably at least 50% by weight.

Further, the mixing ratio of the epoxy resin (A) and the curing agent (B) is such that the chemical equivalent ratio of the curing agent (B) to the epoxy resin (A) is 0.1 from the viewpoint of mechanical properties and moisture resistance reliability. It is preferably in the range of 5 to 1.6, especially 0.8 to 1.3.

The epoxy resin composition for semiconductor encapsulation of the present invention may contain a curing accelerator for accelerating the reaction between the epoxy resin (A) and the curing agent (B).

The curing accelerator is not particularly limited as long as it accelerates the curing reaction. Specific examples thereof include, for example, 2-
Methylimidazole, 2,4-dimethylimidazole,
Imidazole compounds such as 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole and 2-heptadecylimidazole, triethylamine, benzyldimethylamine,
α-methylbenzyldimethylamine, 2- (dimethylaminomethyl) phenol, 2,4,6-tris (dimethylaminomethyl) phenol, 1,8-diazabicyclo (5,4,0) -7-undecenium tetraphenyl Tertiary amine compounds such as borate and 1,8-diazabicyclo (5,4,0) undecene-7, zirconium tetramethoxide, zirconium tetrapropoxide, tetrakis (acetylacetonato) zirconium and tri (acetylacetonato) aluminum And triphenylphosphine, trimethylphosphine, triethylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine and tri (nonylphenyl) phosphine, tetraphenylphosphonium tetraphene Ruboreto and an organic phosphine compound, such as.

Among these curing accelerators, an organic phosphine compound is preferable, especially from the viewpoint of moisture resistance reliability, and triphenylphosphine is particularly preferably used.

These curing accelerators may be used in combination of two or more, depending on the use. The amount of the curing accelerator ranges from 0.1 to 10 parts by weight per 100 parts by weight of the epoxy resin (A). Is preferred.

The inorganic filler (C) used in the present invention includes fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide and antimony oxide. Examples thereof include oxides, asbestos, glass fibers, and glass spheres. Among them, amorphous silica is preferably used because it has a large effect of lowering the linear expansion coefficient and is effective in reducing stress. Examples of amorphous silica include amorphous silica produced by melting quartz, and crushed or spherical silica is used.

The amorphous silica referred to herein generally means one having a true specific gravity of 2.3 or less. In the production of this amorphous silica, it is not necessary to go through a molten state,
Any production method can be used, for example, a method of melting crystalline silica and a method of oxidizing metallic silicon,
Synthesis methods from various raw materials such as hydrolysis of alkoxysilane can be used.

Regarding the particle size and composition of the inorganic filler,
Although not particularly limited, for example, crushed fused silica 9 having an average particle size (meaning a median size; the same applies hereinafter) of 4 to 17 μm.
Silica composition comprising 9 to 80% by weight and 1 to 20% by weight of spherical fused silica having an average particle size of 0.1 to 3 μm, average particle size 4
A silica composition comprising 95 to 40% by weight of crushed fused silica having a mean particle size of 5 to 30 μm and 5 to 60% by weight of spherical fused silica having an average particle size of 5 to 30 μm, and 99 to 5% by weight of spherical fused silica having an average particle size of 3 to 30 μm. A silica composition comprising 1 to 50% by weight of spherical fused silica having a particle size of 0.1 to 3 μm is preferred. Here, the weight% is based on the total amount of silica. Further, when focusing on the entire inorganic filler, the average particle size is 1
It is preferably in the range of 0 to 30 μm.

The epoxy resin composition for semiconductor encapsulation obtained by using these compositions is preferable in that it has excellent fluidity and solder crack resistance. The combination is not limited to the above, and two or more inorganic fillers having different average particle sizes or particle size distributions can be used in combination.

The mixing ratio of the inorganic filler (C) should be in the range of 86 to 95% by weight of the whole composition in consideration of the moldability and low stress of the obtained epoxy resin composition for semiconductor encapsulation. And more preferably 88 to 92% by weight.
It is. The spread of the particle size distribution is not particularly limited, but it is preferable that the n value in the rosin-Rammler distribution is 1.0 to 0.6 from the viewpoint of moldability. Further, when the inorganic filler is boiled in water, it is preferable that the electric conductivity of the water be low and neutral. In addition, it is preferable to use an inorganic filler having a smaller particle size than the size of the circuit pattern of the semiconductor element to be sealed.

In order to avoid the problem of soft errors in the obtained semiconductor device, it is preferable that the concentration of an α-ray emitting substance such as uranium or thorium is extremely low in the composition.

Next, in the present invention, a silane coupling agent may be added to the epoxy resin composition. Examples of the silane coupling agent include those in which an organic group having a functional group such as an alkoxy group, a halogen atom, an amino group, an epoxy group, or a double bond group is directly bonded to a silicon atom, and a partial hydrolysis condensate of an alkoxy group. It is commonly used.
As the hydrolyzable group, an alkoxy group, in particular, a methoxy group and an ethoxy group are preferably used. The organic group in the silane coupling agent includes a nitrogen atom, an oxygen atom,
A hydrocarbon group substituted with a halogen atom, a sulfur atom, or the like is used. Further, a silane coupling agent having an organic group to which all secondary amino groups are bonded is preferably used. It is preferable that the silane coupling agent be added in an amount of 0.1 to 2% by weight based on the total amount of the composition from the viewpoint of fluidity and filling properties. Furthermore, the silane coupling agent can be mixed in advance with the inorganic filler.

Specific examples of the silane coupling agent include γ-glycidoxypropyltrimethoxysilane, γ
Glycidoxypropylmethyldimethoxysilane, γ
-(2,3-epoxycyclohexyl) propyltrimethoxysilane, γ- (N-phenylamino) propyltrimethoxysilane, γ- (N-phenylamino) propylmethyldimethoxysilane, γ- (N-methylamino)
Propyltrimethoxysilane, γ- (N-methylaminopropyl) methyldimethoxysilane, γ- (N-ethylamino) propyltrimethoxysilane, γ- (N-ethylamino) propylmethyldimethoxysilane, γ-glycidoxypropyl Trimethoxysilane, γ- (N-ethylamino) propylmethyltrimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldimethoxysilane, γ-merkatopropyltrimethoxysilane, γ-mercaptopropyl Methyldimethoxysilane, N-β- (aminoethyl)-
γ-aminopropyltrimethoxysilane, N-β- (aminoethyl) -γ-aminopropylmethyldimethoxysilane, N-β- (aminoethyl) -γ-aminopropyltriethylsilane, γ-aminopropyltriethoxysilane, γ -Aminopropylmethyldiethoxysilane, γ
-Aminopropyltrimethoxysilane, γ-aminopropylmethyldimethoxysilane, γ- (N, N-dimethylamino) propyltrimethoxysilane and the like.

The composition of the present invention may contain a bromo compound, which is not an essential component. Further, the substantially existing bromo compound is usually added as a flame retardant to the resin composition, and is not particularly limited. Preferred specific examples of the bromo compound present include brominated bisphenol A
Type epoxy resin, brominated epoxy resin such as brominated phenol novolak type epoxy resin, brominated polycarbonate resin, brominated polystyrene resin, brominated polyphenylene oxide resin, tetrabromobisphenol A, decabromodiphenyl ether, and the like. Brominated epoxy resins such as brominated bisphenol A type epoxy resin and brominated phenol novolak type epoxy resin are particularly preferable from the viewpoint of moldability.

The composition of the present invention may contain an antimony compound, which is not an essential component. This is usually added as a flame retardant aid to the epoxy resin composition for semiconductor encapsulation, and is not particularly limited, and a known one can be used. Preferred specific examples of the antimony compound include antimony trioxide, antimony tetroxide, and antimony pentoxide.

These flame retardants and flame retardant auxiliaries each have a halogen atom and an antimony atom in the resin composition from the viewpoints of easy disposal of unnecessary substances generated from the resin composition and reliability of the semiconductor device. It is preferable that the content is 0.2% by weight or less, and further, it is not substantially blended.

The epoxy resin composition of the present invention may optionally contain various additives described below. Various colorants and pigments such as carbon black and iron oxide, various elastomers such as silicone rubber, olefin copolymer, modified nitrile rubber and modified polybutadiene rubber, various thermoplastic resins such as silicone oil and polyethylene, fluorine-based, and silicone Surfactants such as
Various release agents such as long-chain fatty acids, metal salts of long-chain fatty acids, esters of long-chain fatty acids, amides of long-chain fatty acids and paraffin wax, ion scavengers such as hydrotalcites, and crosslinking agents such as organic peroxides .

The epoxy resin composition of the present invention can be produced by heating and kneading the above components. For example, it is manufactured by melt-kneading using a known kneading method such as a Banbury mixer, a kneader, a roll, a single-screw or twin-screw extruder and a co-kneader. The temperature of the melt-kneading is usually in the range of 70 to 150 ° C.

The epoxy resin composition of the present invention is further pulverized to form a powder, a tablet obtained by compressing the powder, a tablet which is melted by heating and kneading and then solidified by cooling in a mold, and heating and kneading. , And can be used in the form of pellets extruded and further cut. Then, the semiconductor element is sealed from these shapes to manufacture a semiconductor device. The epoxy resin composition of the present invention is applied to a member having a semiconductor fixed to a substrate, for example, from 120 to 2
The semiconductor device is molded at a temperature of 50 ° C., preferably 150 to 200 ° C. by a method such as transfer molding, injection molding, or casting, and sealed with a cured epoxy resin. Further, if necessary, an additional heat treatment (for example, 150 to 200 ° C., 2 to 16 hours) can be performed.

Here, as a semiconductor device suitable for the present invention, SO type such as SOP, SOJ, TSOP, etc.
IC package forms such as BGA and CSP are available. Other examples include an IC package such as a DIP type, a flat pack type, and a PLCC type, a semiconductor device in which a semiconductor element is directly fixed to a pudding wiring board or a heat sink, and a hybrid IC full-mold type semiconductor device. Further, the present invention can be applied to a copper lead frame and a 42 alloy frame substrate.

The material of the printed circuit board is not particularly limited, and examples thereof include metal oxides, glass-based inorganic insulators, sheet bases such as phenol, epoxy, polyimide, and polyester, glass cloth bases, and glass mats. Base material, polysulfone, Teflon (registered trademark), polyimide film, organic insulator such as polyester film,
Examples include metal-based substrates such as a metal base substrate, a metal core substrate, and an enameled top plate. Examples of the heat sink material include copper-based and iron-based materials.

The resin composition for encapsulating a semiconductor of the present invention thus constituted has reliability such as solder crack resistance and peeling resistance, as well as fluidity during molding, curability, mold releasability and the like. The semiconductor encapsulation device can be provided based on the feature that the moldability is excellent.

[0054]

The present invention will be described below in detail with reference to examples. The amounts shown in the tables mean parts by weight. <Examples 1 to 5, Comparative Examples 1 to 5>
Dry blending was performed with a mixer at the composition ratios shown in Tables 2 and 3. This was heated and kneaded for 7 minutes using a mixing roll having a roll surface temperature of 80 ° C., and then cooled and pulverized to produce an epoxy resin composition for semiconductor encapsulation.

[0055]

[Table 1]

[0056]

Embedded image

Various physical properties were measured by the following methods, and the results are shown in Tables 2 and 3.

Fluidity: 1 using an EMMI-type evaluation mold
Spiral flow was measured at 75 ° C. at a molding speed of 25 m / sec.

Curability: molding temperature 175 ° C., molding time 60
A disk having a diameter of 4 inches and a thickness of 3 mm was formed under the condition of seconds, and Barcol hardness immediately after the formation was determined. If there is a value of 70 or more, it is determined that the curability is sufficient.

Crack resistance: 160-pin QFP (External shape:
28 × 28 × 2.5 mm, simulated semiconductor device: 10 × 10 ×
0.5 mm, frame material: copper, chip surface: polyimide film) were molded at 175 ° C for 2 minutes, cured at 180 ° C for 6 hours, and then cured at 85 ° C and 85% RH for 15 minutes.
After each humidification treatment for 0 hour, use an IR reflow furnace for 2 hours.
Heat treatment was performed at 50 ° C. for 10 seconds. Thereafter, the number of external cracks was checked and the number of cracked packages was determined as a defective package, and the value of (1−n / 10) × 100 was defined as a value indicating crack resistance, where n was the number of packages. The closer the value is to 100%, the better the crack resistance. On the other hand, when the sample subjected to heat treatment at 250 ° C. for 10 seconds using an IR reflow furnace was observed for peeling from the lead frame by an ultrasonic flaw detector, the peeled package was regarded as a defective package, and the number of the packages was n (1-n / 10) The value of × 100 was used as a numerical value indicating the peeling resistance. The closer the value is to 100%, the better the peel resistance.

Mold stain: molding temperature 175 ° C., molding time 9
Under the condition of 0 seconds, ten 160-pin QFPs were formed. Check the area of the dirty part of the mold part corresponding to the upper and lower surfaces of the package, divide the area by the area of the mold part corresponding to the upper and lower surfaces of the package, and multiply by 100,
The degree of mold contamination was indicated by%.

[0062]

[Table 2]

As can be seen from Table 2, the epoxy resin compositions of Examples 1 to 5 have fluidity, curability, crack resistance,
Excellent in all physical properties such as peeling resistance and mold stain.

[0064]

[Table 3]

On the other hand, the comparative examples shown in Table 3 are inferior in crack resistance and peel resistance.

[0066]

As described above, the epoxy resin composition for semiconductor encapsulation of the present invention has a high reliability such as solder crack resistance and peeling resistance, fluidity during molding, curability, and mold. A resin composition for semiconductor encapsulation having excellent moldability such as mold releasability can be provided.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 23/31 F-term (Reference) 4J002 CC04X CC05X CD05W CE00X DE076 DE126 DE136 DE146 DE236 DJ006 DJ016 DJ026 DJ046 DL006 FA046 FA086 FD016 FD090 FD130 FD14X FD160 GQ05 4J036 AD15 AD20 AE05 AF06 AF07 AF08 DB15 DC04 DC41 DC46 DD04 DD07 FA02 FA03 FA05 FB08 JA07 4M109 AA01 BA01 BA03 CA21 EA02 EB03 EB04 EB06 EB07 EB08 EB09 EC03 EC03 EC19

Claims (7)

[Claims] 1. An epoxy resin composition containing an epoxy resin (A), a phenolic curing agent (B), and an inorganic filler (C), wherein the epoxy resin (A) comprises:
Having two or more epoxy groups, two
Resin having two aromatic rings and having a structure having an oxygen or sulfur atom between the two aromatic rings (a)
And the phenolic curing agent (B) must have a phenolic compound (b) in which the phenolic curing agent (B) has two or more aromatic groups to which hydroxyl groups are directly connected, and an alicyclic group is interposed between the aromatic groups. An epoxy resin composition for semiconductor encapsulation, which is contained as a component. 2. The epoxy resin (a) has the following chemical formula:
The epoxy resin composition for semiconductor encapsulation according to claim 1, comprising a compound represented by (I). Embedded image (However, X is an oxygen or sulfur atom, and the hydrogen atom bonded to the aromatic ring may be substituted by a monovalent organic group.) 3. The phenolic compound (b) has a chemical formula (II)
3. The epoxy resin composition for semiconductor encapsulation according to claim 1, which has a structure represented by the following formula. Embedded image 4. The epoxy resin composition for semiconductor encapsulation according to claim 2, wherein the phenol compound (b) is contained in an amount of 50% by weight or more based on the curing agent (B). 5. An epoxy resin (A) of 2 to 10% by weight, a phenolic curing agent (B) of 2 to 10% by weight and an inorganic filler (C) of 50 to 9% by weight based on the whole epoxy resin composition.
The epoxy resin composition for semiconductor encapsulation according to any one of claims 1 to 4, which contains 5% by weight. 6. A method for manufacturing a semiconductor device, comprising sealing a semiconductor element using the epoxy resin composition for semiconductor sealing according to claim 1. 7. A semiconductor device comprising a semiconductor element encapsulated with the epoxy resin composition for semiconductor encapsulation according to claim 1.