JPH10279662A - Epoxy resin composition for semiconductor sealing - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a composition excellent in reliability such as soldering cracking resistance and peeling resistance and moldability such as molding flow, curability and mold release by using an epoxy resin having at least two epoxy groups, having at least two aromatic rings between the epoxy groups and having a structure having at least one C-C double bond between the rings. SOLUTION: The epoxy resin (A) is represented by formula 1 (wherein hydrogen atoms bonded to the aromatic rings and to the doubly bonded carbon atoms may be substituted by monovalent organic groups). The phenolic curing agent (B) used is usually a compound having at least two phenolic hydroxyl groups and is exemplified by a phenol novolac resin. The chemical equivalent ratio of component A is 0.5-1.6. The inorganic filler (C) used is exemplified by fused silica and has a mean particle diameter of desirably 10-30 μm. A polyorganosiloxane (D) is added. The amounts of addition (wt.%) are 2-15 for component A, 2-15 for component B, 86-95 for component C and 0.01-3 for component D.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an epoxy resin composition for semiconductor encapsulation used for encapsulating a semiconductor device. More specifically, an epoxy resin composition for semiconductor encapsulation in which cracks are prevented from occurring in the encapsulating resin in a soldering step when mounting the resin-encapsulated semiconductor device,
In particular, the present invention relates to an epoxy resin composition for semiconductor encapsulation having excellent moisture resistance reliability and moldability (fluidity, curability).

[0002]

2. Description of the Related Art Epoxy resins are excellent in heat resistance, moisture resistance, electrical properties and adhesiveness, and can be imparted with various properties by compounding and prescription. Therefore, they are used as industrial materials such as paints, adhesives and electrical insulating materials. It's being used.

For example, as a method of sealing an electronic circuit component such as a semiconductor device, a hermetic seal made of metal or ceramics and a resin seal made of phenol resin, silicone resin, epoxy resin or the like have been conventionally proposed. In this regard, resin sealing with an epoxy resin is mainly used in terms of balance between economy, productivity, and physical properties.

On the other hand, in recent years, the density and automation of component mounting on a printed circuit board have been advanced, and instead of the conventional "insertion mounting method" in which lead pins are inserted into holes in the board, components are soldered on the surface of the board. “Surface mounting method” has become popular.

[0005] Along with this, the package is also a conventional DIP
(Dual in-line package) to thin FPP (flat plastic package) suitable for high-density mounting and surface mounting.

[0006] With the shift to the surface mounting method, the soldering process, which has not been a problem so far, has become a serious problem.

That is, in the conventional pin insertion mounting method,
In the soldering process, the leads are only partially heated, but in the surface mounting method, the entire package is immersed in a heating medium and heated.

As a soldering method in this surface mounting method, a solder bath immersion, heating by a saturated vapor of an inert gas (a vapor phase method), an infrared reflow method, and the like are used.
Since the package is heated to a high temperature of 270 ° C., in a package sealed with a conventional sealing resin, cracks may occur in the resin portion during soldering, or peeling may occur between the chip and the resin. Thus, there is a problem that the reliability is lowered and the product cannot be used as a product.

The occurrence of cracks in the soldering process
It is said that the moisture absorbed between post-curing and the mounting process explosively turns into steam and expands during soldering and heating.As a countermeasure, the post-cured package must be completely dried. A method of shipping in a sealed container is used.

[0010] However, the method of enclosing the dry package in a container has disadvantages that the manufacturing process and the handling of the product are complicated and the product price is high.

As a method of sealing with an epoxy resin, a composition in which a curing agent and an inorganic filler are mixed with an epoxy resin is used, a semiconductor element is set in a mold, and sealed with a low-pressure transfer molding machine. The method is commonly used.

The molding machine used is also changing from a conventional conventional system to a multi-plunger system in accordance with the recent trend toward thinner and smaller packages and automatic molding. Here, the conventional method is to mold a large number of devices in one pot at a time and is excellent in moldability, whereas the multi-plunger method is a method in which 1-2 devices are basically molded in one pot. Although it can be automated, it is inferior to the conventional method in terms of productivity.

However, along with the shift of the molding method, the required characteristics of the moldability of the resin composition are becoming more severe. Specifically, the demand for thinner and smaller packages requires more fluidity than before, and from the viewpoint of automation and productivity, it has excellent curability, mold release properties and low flash during molding. Gender has become quite demanding.

Further, when the resin-sealed semiconductor device is left in a high-temperature and high-humidity environment with the miniaturization of the aluminum wiring in accordance with the high integration of the device, the sealing resin itself or the sealing resin and the lead frame are removed. Higher performance has also been required for the performance of preventing breakdown of the semiconductor due to the intrusion of moisture through the interface with the semiconductor, that is, the humidity resistance reliability.

Based on such circumstances, various studies have been made on improvements in epoxy resin compositions for semiconductor encapsulation. For example, a method of blending a styrene-based block copolymer rubber or a silicone rubber using a biphenyl-type epoxy resin as an epoxy resin (Japanese Patent Application Laid-Open No. 63-251419),
A method using a biphenyl type epoxy resin as an epoxy resin and silica having a specific particle size as a filler (Japanese Patent Laid-Open No. 1-87)
616), a method in which a biphenyl type epoxy resin is used as an epoxy resin and a phenol aralkyl resin is used as a curing agent, and a filler is blended in an amount of 86 to 95% by weight (JP-A-6-80).
No. 763) has been proposed.

However, recently, surface mount type IC packages have been further developed, and the number of pins, thickness, size, and performance have been increasing. That is, I for memory use
SOP (Small Outline /
Package) and TSOP (Thin Small Outline Package), with the increasing functionality of IC chips, the need for thinner and smaller IC packages despite the increase in the size and number of pins of IC chips. ing. Also, the material of the lead frame is changing from iron-based 42 alloy to copper. Further, area array type packages such as BGA (ball grid array) and CSP (chip size package) have also appeared.

[0017]

In view of the above situation,
Problems to be solved by the present invention are solder crack resistance,
An object of the present invention is to provide a resin composition for semiconductor encapsulation having excellent moldability such as reliability such as peeling resistance, fluidity during molding, curability, and mold releasability.

[0018]

In order to achieve the above object, the present invention has the following arrangement. 1. "An epoxy resin composition containing an epoxy resin (A), a phenolic curing agent (B), an inorganic filler (C) and a polyorganosiloxane (D), wherein the epoxy resin (A) is an epoxy resin One or more carbon-carbon double bonds between at least two of the aromatic rings, having two or more groups, having two or more aromatic rings between at least two of the epoxy groups, 1. An epoxy resin composition for semiconductor encapsulation containing an epoxy resin (a) having a structure having a bond. ""The epoxy resin composition for semiconductor encapsulation, wherein the epoxy resin (a) is a compound represented by the chemical formula (I).

Embedded image (However, the hydrogen atom bonded to the aromatic ring and the double bond carbon may be substituted by a monovalent organic group.) ", 3. Any of the above epoxy resin compositions for semiconductor encapsulation, wherein the content of the polyorganosiloxane (D) is 0.01 to 3% with respect to the total amount of the epoxy resin composition. "The polysiloxane has at least one functional group selected from an epoxy group, an amino group, a carboxyl group, a (meth) acryl group, a mercapto group, an alcoholic hydroxyl group, a phenolic hydroxyl group and a carbinol group. 4. An epoxy resin composition for encapsulating a semiconductor according to any one of the above. " 5. The epoxy resin composition according to any one of the above, wherein the inorganic filler (C) contains 86 to 95% by weight of the entire epoxy resin composition. 6. The epoxy resin composition according to any one of the above, wherein the content of each of a bromine atom and an antimony atom is 0.1% by weight or less. "The epoxy resin composition according to any one of the above, wherein the phenolic curing agent (B) contains a compound represented by the chemical formula (II).

Embedded image R ³ — (— CH ₂ —R ¹ —CH ₂ —R ² —) _n —CH ₂ —R ¹ —CH ₂ —R ³ (II) (where R ^{1 in} the formula has a hydroxyl group) divalent aromatic group not, R ² is a divalent aromatic group, R ³ is a monovalent aromatic group having a hydroxyl group, may be different in R ¹ to R ³ each identical .n having a hydroxyl group Represents 0 or an integer of 1 or more.) ""A semiconductor device characterized in that a semiconductor element is sealed with any one of the epoxy resin compositions described above."

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The configuration of the present invention will be described below in detail.
In the present invention, “weight” means “mass”.
The epoxy resin (A) in the present invention has two or more epoxy groups, has two or more aromatic rings between at least two epoxy groups, and has at least two aromatic rings between the two aromatic rings. And epoxy resin (a) having a structure having one or more carbon-carbon double bonds. The hydrogen atom bonded to the aromatic ring may be substituted with a monovalent organic group, and preferred examples of the substituent include a methyl group, an ethyl group, a propyl group, a butyl group, an acryl group,
A methacryl group can be exemplified. Preferred examples of these are the chemical formula (I) and the chemical formula (I-
Compounds represented by 1) are exemplified.

Embedded image

Embedded image

In the epoxy resins represented by the above formulas (I) and (I-1), a hydrogen atom bonded to an aromatic ring and a double bond carbon is partially or entirely substituted with a monovalent organic group. You may. And the carbon number of the organic group is 1
A range from 10 to 10 is preferably used. Preferred examples of the substituent include a methyl group, an ethyl group, a propyl group, a butyl group, an acryl group, and a methacryl group. Among the epoxy resins represented by the formulas (I) and (I-1), those polymerized by an addition reaction of an epoxy group can also be used.

Further, a compound having one or more methylene groups between a carbon-carbon double bond and an aromatic ring, a compound having a carbon-carbon double bond and an aromatic ring, A compound having at least one ether group between
Compounds having one or more amide groups between a carbon double bond and an aromatic ring, compounds having one or more ester bonds between a carbon-carbon double bond and an aromatic ring, carbon- Compounds having one or more carbonyl groups between the carbon double bond and the aromatic ring can also be used. In the present invention,
The amount of the epoxy resin (A) is not particularly limited, but is usually 2 to 15% by weight, preferably 2 to 10% by weight, and more preferably 2 to 8% by weight. Further, the epoxy resin (a) having the feature of the present invention is the same as the epoxy resin (A).
% By weight, more preferably 70% by weight or more.

The phenolic curing agent (B) used in the present invention is not particularly limited as long as it reacts with the epoxy resin (A) to be cured, but is usually a compound having two or more phenolic hydroxyl groups. Can be used. Specific examples thereof include a phenol novolak resin, a cresol novolak resin, a phenol compound represented by the following chemical formula (II), various novolak resins synthesized from bisphenol A and resorcin, various polyphenol compounds such as polyvinyl phenol, and anhydrous polyphenol compounds. Examples thereof include acid anhydrides such as maleic acid, phthalic anhydride and pyromellitic anhydride, and aromatic diamines such as metaphenylenediamine, diaminodiphenylmethane, and diaminodiphenylsulfone.

[0023]

Embedded image R ³ — (— CH ₂ —R ¹ —CH ₂ —R ² —) _n —CH ₂ —R ¹ —CH ₂ —R ³ (II) (where R ^{1 in} the formula has a hydroxyl group) divalent aromatic group not, R ² is a divalent aromatic group, R ³ is a monovalent aromatic group having a hydroxyl group, may be different in R ¹ to R ³ each identical .n having a hydroxyl group Represents 0 or an integer of 1 or more.) More specifically, a phenolic curing agent represented by the following chemical formula can be used.

Embedded image (In the above formulas, n is an integer of 0 or more.)

As the curing agent for the epoxy resin composition, phenol novolak resins, cresol novolak resins and phenol p-xylylene copolymers are preferably used from the viewpoint of heat resistance, moisture resistance and storage stability, and phenol p-xylylene copolymer is particularly preferred. It is a xylylene copolymer.
Depending on the application, two or more curing agents may be used in combination. Further, from the viewpoint of the fluidity of the sealant, the melt viscosity of the phenolic curing agent is 6 poise (6 Pa · s) in ICI (150 ° C.) viscosity.
Below, further 4poise (4Pa · s), further 2poise
(2 Pa · s) The following are preferably used.

In the present invention, the compounding amount of the curing agent (B) is usually 2 to 15% by weight, preferably 2 to 1% by weight in the composition.
0% by weight, more preferably 2 to 8% by weight.

Further, the mixing ratio of the epoxy resin (A) and the curing agent (B) is determined based on the chemical equivalent ratio of the functional group of the curing agent (B) to the epoxy resin (A) from the viewpoint of mechanical properties and moisture resistance reliability. Is preferably in the range of 0.5 to 1.6, particularly 0.8 to 1.3.

The epoxy resin composition for encapsulating a semiconductor of the present invention may contain a curing accelerator for accelerating the reaction between the epoxy resin (A) and the curing agent (B).

The curing accelerator is not particularly limited as long as it accelerates the curing reaction. Specific examples thereof include 2-methylimidazole, 2,4-dimethylimidazole,
Imidazole compounds such as -ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole and 2-heptadecylimidazole, triethylamine, benzyldimethylamine, α
-Methylbenzyldimethylamine, 2- (dimethylaminomethyl) phenol, 2,4,6-tris (dimethylaminomethyl) phenol, 1,8-diazabicyclo (5,4,0) -7-undecenium tetraphenylborate And tertiary amine compounds such as 1,8-diazabicyclo (5,4,0) undecene-7, zirconium tetramethoxide, zirconium tetrapropoxide,
Organometallic compounds such as tetrakis (acetylacetonato) zirconium and tri (acetylacetonato) aluminum, and triphenylphosphine, trimethylphosphine, triethylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine and tri (nonylphenyl) phosphine And organic phosphine compounds such as tetraphenylphosphonium tetraphenylborate.

Among these curing accelerators, organic phosphine compounds are preferred, and triphenylphosphine is particularly preferred from the viewpoint of moisture resistance reliability.

These curing accelerators may be used in combination of two or more depending on the use, and the amount of the curing accelerator ranges from 0.1 to 10 parts by weight based on 100 parts by weight of the epoxy resin (A). Is preferred.

Examples of the inorganic filler (C) used in the present invention include fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide and antimony oxide. Examples thereof include oxides, asbestos, glass fibers, and glass spheres. Among them, amorphous silica is preferably used because it has a large effect of lowering the linear expansion coefficient and is effective in reducing stress. Examples of amorphous silica include amorphous silica produced by melting quartz, and crushed or spherical silica is used.

The amorphous silica referred to here generally means one having a true specific gravity of 2.3 or less. In the production of this amorphous silica, it is not necessary to go through a molten state,
Any production method can be used, for example, a method of melting crystalline silica and a method of oxidizing metallic silicon,
Synthesis methods from various raw materials such as hydrolysis of alkoxysilane can be used.

Regarding the particle size and composition of the inorganic filler,
Although not particularly limited, for example, crushed fused silica 9 having an average particle size (meaning a median size; the same applies hereinafter) of 4 to 17 μm.
Silica composition comprising 9 to 80% by weight and 1 to 20% by weight of spherical fused silica having an average particle size of 0.1 to 3 μm, average particle size 4
A silica composition comprising 95 to 40% by weight of crushed fused silica having a mean particle size of 5 to 30 μm and 5 to 60% by weight of spherical fused silica having an average particle size of 5 to 30 μm, and 99 to 5% by weight of spherical fused silica having an average particle size of 3 to 30 μm. A silica composition comprising 1 to 50% by weight of spherical fused silica having a particle size of 0.1 to 3 μm is preferred. Here, the weight% is based on the total amount of silica. Further, when focusing on the entire inorganic filler, the average particle size is 1
It is preferably in the range of 0 to 30 μm.

The epoxy resin composition for semiconductor encapsulation obtained by using these compositions is preferable in that it has excellent fluidity and solder crack resistance. The combination is not limited to the above, and two or more inorganic fillers having different average particle sizes or particle size distributions can be used in combination.

The mixing ratio of the inorganic filler (C) should be in the range of 86 to 95% by weight of the whole composition in consideration of the moldability and low stress of the obtained epoxy resin composition for semiconductor encapsulation. And more preferably 88 to 92% by weight.
It is. On the other hand, when moldability typified by fluidity is required, the amount of the inorganic filler may be set to 60% by weight or more and less than 86% by weight. The spread of the particle size distribution is not particularly limited, but it is preferable that the n value in the rosin-Rammler distribution is 1.0 to 0.6 from the viewpoint of moldability. Further, when the inorganic filler is boiled in water, it is preferable that the electric conductivity of the water be low and neutral. In addition, it is preferable to use an inorganic filler having a smaller particle size than the size of the circuit pattern of the semiconductor element to be sealed.

In order to avoid the problem of soft errors in the obtained semiconductor device, it is preferable that the concentration of α-ray emitting substances such as uranium and thorium is extremely low in the composition.

Next, in the present invention, a silane coupling agent may be added to the epoxy resin composition. As the silane coupling agent, a halogen atom, an amino group,
An organic group having a functional group such as an epoxy group or a double bond group directly bonded to a silicon atom, and a hydrolyzable group such as an alkoxy group directly bonded to a silicon atom, and a partial hydrolysis condensate of the alkoxy group Is generally used. As the hydrolyzable group, an alkoxy group, in particular, a methoxy group and an ethoxy group are preferably used. Examples of the organic group in the silane coupling agent include those having a hydrocarbon group substituted by a nitrogen atom, an oxygen atom, a halogen atom, a sulfur atom, or the like. Further, a silane coupling agent having an organic group to which all secondary amino groups are bonded is preferably used. It is preferable that the silane coupling agent be added in an amount of 0.1 to 2% by weight based on the total amount of the composition from the viewpoint of fluidity and filling properties. Furthermore, the silane coupling agent can be mixed in advance with the inorganic filler.

Specific examples of the silane coupling agent include γ-glycidoxypropyltrimethoxysilane, γ
Glycidoxypropylmethyldimethoxysilane, γ
-(2,3-epoxycyclohexyl) propyltrimethoxysilane, γ- (N-phenylamino) propyltrimethoxysilane, γ- (N-phenylamino) propylmethyldimethoxysilane, γ- (N-methylamino)
Propyltrimethoxysilane, γ- (N-methylaminopropyl) methyldimethoxysilane, γ- (N-ethylamino) propyltrimethoxysilane, γ- (N-ethylamino) propylmethyldimethoxysilane, γ-glycidoxypropyl Trimethoxysilane, γ- (N-ethylamino) propylmethyltrimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldimethoxysilane, γ-merkatopropyltrimethoxysilane, γ-mercaptopropyl Methyldimethoxysilane, N-β- (aminoethyl)-
γ-aminopropyltrimethoxysilane, N-β- (aminoethyl) -γ-aminopropylmethyldimethoxysilane, N-β- (aminoethyl) -γ-aminopropyltriethylsilane, γ-aminopropyltriethoxysilane, γ -Aminopropylmethyldiethoxysilane, γ
-Aminopropyltrimethoxysilane, γ-aminopropylmethyldimethoxysilane, γ- (N, N-dimethylamino) propyltrimethoxysilane and the like.

In the present invention, a polyorganosiloxane is blended. Generally, it is a polymer such as a dimethylsiloxane unit, a methylphenylsiloxane unit, a diphenylsiloxane unit, etc. Among them, the dimethylsiloxane unit is a main component (preferably 60 mol% or more, more preferably 80 mol% or more). Are preferably used. Further, those in which the side chain or terminal is substituted by hydrogen, ethyl group or hydroxyl group can also be used. As a form, an oil-like or rubber-like thing is used arbitrarily. The molecular weight of the silicone is arbitrary from that having a disiloxane structure to that having an infinity due to crosslinking. Above all, as the number average degree of polymerization, the repeating unit of the siloxane is 2 or more,
5 or more, on the other hand, 10,000 or less, and further 5,0
Those having a value of not more than 00, more preferably not more than 2,000 are preferably used.

The content of the polyorganosiloxane is preferably in the range of 0.01 to 3% by weight, more preferably 0.02 to 1% by weight.

In the polyorganosiloxane, at least one functional group selected from an epoxy group, an amino group, a carboxyl group, a (meth) acryl group, a mercapto group, an alcoholic hydroxyl group, a phenolic hydroxyl group and a carbinol group It is preferable to use a modified silicone in which an organic group having the formula (1) is directly bonded to a side chain of some silicon atoms or a terminal of the polymer. Among these, an organic group having an epoxy group, an amino group, a carboxyl group, and a phenolic hydroxyl group has high reactivity with the epoxy resin or phenolic curing agent blended in the present invention.

The organic groups include γ-glycidoxypropyl, γ- (2,3-epoxycyclohexyl) propyl, γ-aminopropyl, γ-mercaptopropyl, γ-carboxypropyl, γ- Examples thereof include a hydroxypropyl group. In addition, an epoxy group was provided by a reaction between an organic group having a carboxyl group and a polyvalent epoxy compound, and a functional group to which an epoxy group was provided, an organic group having an amino group, and a polyvalent epoxy compound. A functional group or the like to which an amino group is provided by a reaction between an organic group having a functional group or an epoxy group and a polyvalent amino group compound is also effective.

In addition to the above compounds, release agents such as long-chain fatty acids, metal salts of long-chain fatty acids, esters of long-chain fatty acids, amides of long-chain fatty acids, and paraffin waxes may be included. The addition amount of these release agents is not particularly limited, but is preferably 0.01 to 5% by weight based on the resin composition.
Is more preferable, more preferably 0.05 to 1% by weight, and still more preferably 0.1 to 0.6% by weight. If the amount of the release agent is too large, the strength of the resin and the adhesion to the frame are reduced. If the amount is too small, the mold release effect on the mold is not exhibited. Therefore, it is preferable to add an appropriate amount.

In the composition of the present invention, an antimony compound can be blended although it is not an essential component. This is usually added as a flame retardant aid to the epoxy resin composition for semiconductor encapsulation, and is not particularly limited, and a known one can be used. Preferred specific examples of the antimony compound include antimony trioxide, antimony tetroxide, antimony pentoxide, and sodium antimonate.

These flame retardants and flame retardant auxiliaries make it possible to remove halogen and antimony atoms from the resin composition from the viewpoints of easy disposal of unnecessary substances generated during molding from the resin composition and reliability of the semiconductor device. On the other hand, it is preferable that the content is 0.2% by weight or less, and further, it is not substantially blended.

The epoxy resin composition of the present invention can optionally contain the following various additives. Various colorants and pigments such as carbon black and iron oxide, various elastomers such as silicone rubber, olefin copolymer, modified nitrile rubber and modified polybutadiene rubber, various thermoplastic resins such as silicone and polyethylene, surfactants, and Ion scavengers such as talcites and crosslinking agents such as organic peroxides.

The epoxy resin composition of the present invention can be produced by heating and kneading the above components. For example, it is manufactured by melt-kneading using a known kneading method such as a Banbury mixer, a kneader, a roll, a single-screw or twin-screw extruder and a co-kneader. The temperature of the melt-kneading is usually in the range of 70 to 150 ° C.

The epoxy resin composition of the present invention is further pulverized to form a powder, a tablet obtained by tableting the powder, a tablet which is melted by heating and kneading, and solidified by cooling in a mold, and heating and kneading. , And can be used in the form of pellets extruded and further cut. Then, the semiconductor element is sealed from these shapes to manufacture a semiconductor device. For a member having a semiconductor element fixed to a substrate, the epoxy resin composition of the present invention is applied to, for example, 120
A semiconductor device sealed by a cured epoxy resin is manufactured at a temperature of from 250 to 250 ° C., preferably from 150 to 200 ° C. by a method such as transfer molding, injection molding, or casting. Further, if necessary, an additional heat treatment (for example, 150 to 200 ° C., 2 to 16 hours) can be performed.

Here, semiconductor devices suitable for the present invention include SO type such as SOP, SOJ and TSOP, and pressure type QFP,
IC package forms such as BGA and CSP are available. Other examples include an IC package such as a DIP type, a flat pack type, and a PLCC type, a semiconductor device in which a semiconductor element is directly fixed to a pudding wiring board or a heat sink, and a hybrid IC full-mold type semiconductor device. Further, the present invention can be applied to a copper lead frame and a 42 alloy frame substrate.

The material of the printed circuit board is not particularly limited, and examples thereof include metal oxides, glass-based inorganic insulators, sheet bases such as phenol, epoxy, polyimide, and polyester, glass cloth bases, and glass mats. Base material, polysulfone, Teflon, polyimide film,
Examples thereof include organic insulators such as polyester films, metal base substrates, metal core substrates, and metal substrates such as enameled top plates. Examples of the heat sink material include copper-based and iron-based materials.

The resin composition for semiconductor encapsulation of the present invention thus constituted has reliability such as solder crack resistance and peeling resistance, as well as fluidity during molding, curability, and mold releasability. The semiconductor encapsulation device can be provided based on the feature that the moldability is excellent.

[0052]

The present invention will be described below in detail with reference to examples. The amounts shown in the tables mean parts by weight.

<Examples 1 to 3 and Comparative Examples 1 to 9> The components shown in Table 1 were dry-blended by a mixer at the composition ratios shown in Tables 2, 3 and 4. This was heated and kneaded for 7 minutes using a mixing roll having a roll surface temperature of 80 ° C.,
It was cooled and pulverized to produce an epoxy resin composition for semiconductor encapsulation.

[0054]

[Table 1]

Embedded image

Embedded image

Various physical properties were measured by the following methods, and the results are shown in Tables 2, 3 and 4.

Fluidity: 1 using an EMMI-type evaluation mold
Spiral flow was measured at 75 ° C. at a molding speed of 25 m / sec. Curability: A disk having a diameter of 4 inches and a thickness of 3 mm was molded at a molding temperature of 175 ° C. and a molding time of 60 seconds, and Barcol hardness immediately after molding was determined. If there is a value of 70 or more, it is determined that the curability is sufficient. Crack resistance: 160-pin QFP (Outer dimensions: 28 × 28 ×
2.5 mm, simulated semiconductor element: 10 × 10 × 0.5 mm, frame material: copper, chip surface: polyimide film)
After molding 10 pieces under the condition of 2 ° C. for 2 minutes and curing at 180 ° C. for 6 hours, humidifying treatment at 85 ° C. and 85% RH for 150 hours, respectively, and heating at 250 ° C. using an IR reflow furnace.
Heat treatment was performed for seconds. After that, the number of external cracks is checked and the package containing the crack is determined as a defective package.
Assuming that the number is n, a value of (1-n / 10) × 100 was taken as a numerical value indicating crack resistance. The closer the value is to 100%, the better the crack resistance. On the other hand, when the sample subjected to heat treatment at 250 ° C. for 10 seconds using an IR reflow furnace was observed for peeling from the lead frame by an ultrasonic flaw detector, the peeled package was regarded as a defective package, and the number of the packages was n (1-n / 10) The value of × 100 was used as a numerical value indicating crack resistance. The closer the value is to 100%, the better the peel resistance. Mold stain: Ten 160-pin QFPs were molded under the conditions of a molding temperature of 175 ° C. and a molding time of 90 seconds. The area of the dirty part of the mold part corresponding to the upper and lower surfaces of the package is checked, the area is divided by the area of the mold part corresponding to the upper and lower surfaces of the package, and the result is multiplied by 100 to obtain the degree of mold contamination by%. Displayed with.

[0057]

[Table 2]

As can be seen from Table 2, the epoxy resin compositions of Examples 1 to 3 have all the physical properties such as fluidity, curability, crack resistance, peeling resistance and mold stains as compared with Comparative Examples. Excellent in

[0059]

[Table 3]

[0060]

[Table 4]

On the other hand, it is understood that the comparative examples shown in Tables 3 and 4 are inferior in crack resistance, peeling resistance and the like.

[0062]

According to the present invention, a resin composition for semiconductor encapsulation having excellent reliability such as solder crack resistance and peeling resistance, and excellent moldability such as fluidity at the time of molding, curability and mold releasability. Can be provided.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification code FI C08L 83/04 C08L 83/04 H01L 23/29 H01L 23/30 R 23/31

Claims (8)

[Claims] An epoxy resin composition comprising an epoxy resin (A), a phenolic curing agent (B), an inorganic filler (C) and a polyorganosiloxane (D), wherein the epoxy resin (A) ) Has two or more epoxy groups, has two or more aromatic rings between at least two epoxy groups, and has at least two aromatic rings between at least two aromatic rings.
An epoxy resin composition for semiconductor encapsulation containing an epoxy resin (a) having a structure having at least one carbon-carbon double bond. 2. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the epoxy resin (a) is a compound represented by the chemical formula (I). Embedded image (However, the hydrogen atom bonded to the aromatic ring and the double bond carbon may be substituted by a monovalent organic group.) 3. A polyorganosiloxane (D) content of 0.01 to 3% by weight based on the total weight of the epoxy resin composition.
The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein: 4. The polysiloxane is one or more functional groups selected from an epoxy group, an amino group, a carboxyl group, a (meth) acryl group, a mercapto group, an alcoholic hydroxyl group, a phenolic hydroxyl group and a carbinol group. The epoxy resin composition for semiconductor encapsulation according to any one of claims 1 to 3, wherein 5. The epoxy resin composition according to claim 1, wherein the inorganic filler (C) contains 86 to 95% by weight of the entire epoxy resin composition. 6. The composition according to claim 1, wherein the contents of bromine atoms and antimony atoms are each 0.1% by weight or less.
Any epoxy resin composition. 7. The phenolic curing agent (B) has a chemical formula (I)
The epoxy resin composition according to any one of claims 1 to 6, comprising the compound represented by (I). Embedded image R ³ — (— CH ₂ —R ¹ —CH ₂ —R ² —) _n —CH ₂ —R ¹ —CH ₂ —R ³ (II) (where R ^{1 in} the formula has a hydroxyl group) divalent aromatic group not, R ² is a divalent aromatic group, R ³ is a monovalent aromatic group having a hydroxyl group, may be different in R ¹ to R ³ each identical .n having a hydroxyl group Represents 0 or an integer of 1 or more.) 8. A semiconductor device comprising a semiconductor element encapsulated with the epoxy resin composition according to claim 1.