JP2005314565A - Epoxy resin composition and semiconductor device - Google Patents
Epoxy resin composition and semiconductor device Download PDFInfo
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- JP2005314565A JP2005314565A JP2004134755A JP2004134755A JP2005314565A JP 2005314565 A JP2005314565 A JP 2005314565A JP 2004134755 A JP2004134755 A JP 2004134755A JP 2004134755 A JP2004134755 A JP 2004134755A JP 2005314565 A JP2005314565 A JP 2005314565A
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- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 82
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 81
- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 239000000203 mixture Substances 0.000 title claims abstract description 46
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 40
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 30
- 239000005011 phenolic resin Substances 0.000 claims abstract description 16
- -1 polyethylene Polymers 0.000 claims abstract description 16
- 239000004698 Polyethylene Substances 0.000 claims abstract description 9
- 229920000573 polyethylene Polymers 0.000 claims abstract description 9
- 238000007789 sealing Methods 0.000 claims abstract description 7
- 238000005538 encapsulation Methods 0.000 claims description 22
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 18
- 125000000962 organic group Chemical group 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- 229920001903 high density polyethylene Polymers 0.000 claims description 3
- 239000004700 high-density polyethylene Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 abstract description 19
- 239000000306 component Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 description 13
- 239000011347 resin Substances 0.000 description 13
- 239000000047 product Substances 0.000 description 12
- 239000004209 oxidized polyethylene wax Substances 0.000 description 10
- 235000013873 oxidized polyethylene wax Nutrition 0.000 description 10
- 238000000465 moulding Methods 0.000 description 9
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 8
- 239000004593 Epoxy Substances 0.000 description 7
- 238000011109 contamination Methods 0.000 description 6
- 239000007822 coupling agent Substances 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 239000011256 inorganic filler Substances 0.000 description 6
- 229910003475 inorganic filler Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000013329 compounding Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 125000003700 epoxy group Chemical group 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 229920003986 novolac Polymers 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- 0 CC(NC(*)(*)OC)=* Chemical compound CC(NC(*)(*)OC)=* 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 125000002529 biphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C12)* 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000004203 carnauba wax Substances 0.000 description 2
- 235000013869 carnauba wax Nutrition 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- UJNZOIKQAUQOCN-UHFFFAOYSA-N methyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C)C1=CC=CC=C1 UJNZOIKQAUQOCN-UHFFFAOYSA-N 0.000 description 1
- GKTNLYAAZKKMTQ-UHFFFAOYSA-N n-[bis(dimethylamino)phosphinimyl]-n-methylmethanamine Chemical compound CN(C)P(=N)(N(C)C)N(C)C GKTNLYAAZKKMTQ-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-O phenylphosphanium Chemical compound [PH3+]C1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-O 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- IYMSIPPWHNIMGE-UHFFFAOYSA-N silylurea Chemical compound NC(=O)N[SiH3] IYMSIPPWHNIMGE-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
- XAEWLETZEZXLHR-UHFFFAOYSA-N zinc;dioxido(dioxo)molybdenum Chemical compound [Zn+2].[O-][Mo]([O-])(=O)=O XAEWLETZEZXLHR-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
本発明は、半導体封止用エポキシ樹脂組成物及び半導体装置に関するものである。 The present invention relates to an epoxy resin composition for semiconductor encapsulation and a semiconductor device.
近年、電子機器の小型化、軽量化、高性能化の市場動向において、半導体の高集積化が年々進み、又半導体パッケージの表面実装化が促進されてきている。更に地球環境へ配慮した企業活動が重要視され、有害物質である鉛を2006年までに特定用途以外で全廃するようにEU(欧州連合)による廃電子電気機器(WEEE)に示された。鉛フリー半田の融点は従来の鉛/スズ半田に比べて高く、赤外線リフロー、半田浸漬等の半田実装時の温度も従来の220〜240℃が、今後240℃〜260℃と高くなる。このような実装温度の上昇により、実装時に樹脂部にクラックが入り、信頼性が保証できないという問題が生じている。更にリードフレームについても、脱鉛の観点から、外装半田メッキの代わりに事前にニッケル・パラジウムメッキを施したリードフレームの適用が進められている。ニッケル・パラジウムメッキは封止材料との密着性が低く、実装時に界面において剥離が生じ、樹脂部にクラックも入りやすい。 In recent years, in the market trends of downsizing, weight reduction, and high performance of electronic devices, higher integration of semiconductors has progressed year by year, and surface mounting of semiconductor packages has been promoted. In addition, corporate activities in consideration of the global environment are regarded as important, and the waste electronic and electrical equipment (WEEE) by the EU (European Union) has been shown to completely eliminate lead, which is a hazardous substance, except for specific uses by 2006. The melting point of lead-free solder is higher than that of conventional lead / tin solder, and the temperature at the time of solder mounting such as infrared reflow and solder dipping is increased from 220 to 240 ° C. to 240 to 260 ° C. in the future. Due to such an increase in mounting temperature, there is a problem that the resin part is cracked during mounting and reliability cannot be guaranteed. Furthermore, with regard to lead frames, from the viewpoint of lead removal, the use of lead frames pre-plated with nickel / palladium instead of external solder plating is being promoted. Nickel / palladium plating has low adhesion to the sealing material, and peeling occurs at the interface during mounting, and cracks are likely to occur in the resin part.
このような課題に対し、半田耐熱性の向上に対して低吸水性のエポキシ樹脂や硬化剤を適用することにより(例えば、特許文献1、2、3参照。)、実装温度の上昇に対して対応が取れるようになってきた。その半面、このような低吸水・低弾性率を示すエポキシ樹脂組成物は架橋密度が低く、硬化直後の成形物は軟らかく、連続生産では金型への樹脂トラレ等の成形性での不具合が生じ、生産性を低下させる問題があった。
更に、生産性向上への取り組みとしては酸化ポリエチレンを添加する方法(例えば、特許文献4、5参照。)が提案されているが、酸化ポリエチレンのみでは十分な離型性を得られず、十分な離型性を得る為には配合量を多くする必要があり、その場合、密着性の低下を引き起こす。また、酸化ポリエチレンの分散を向上させる目的でジメチルシロキサンを主鎖とするエポキシポリエーテルシリコーンを併用する方法が提案されている(例えば、特許文献6参照。)が、ポリエーテル鎖を有するシリコーンオイルは生産面では非常に良好であるが、ポリエーテル鎖が吸湿性を高め半田耐熱性を低下させる問題があった。このように半田耐熱性に優れ、かつ離型性、連続成形性、成形品外観、金型汚れ等生産に関する課題に対応した半導体封止用エポキシ樹脂組成物が要求されている。
For such a problem, by applying a low water-absorbing epoxy resin or a curing agent to improve solder heat resistance (for example, see Patent Documents 1, 2, and 3), the mounting temperature rises. The correspondence has come to come. On the other hand, the epoxy resin composition exhibiting such low water absorption and low elastic modulus has a low crosslink density, and the molded product immediately after curing is soft. There was a problem of lowering productivity.
Furthermore, as an effort to improve productivity, a method of adding oxidized polyethylene (for example, see Patent Documents 4 and 5) has been proposed, but sufficient release properties cannot be obtained with oxidized polyethylene alone. In order to obtain releasability, it is necessary to increase the compounding amount, and in this case, the adhesiveness is lowered. In addition, a method using an epoxy polyether silicone having dimethylsiloxane as a main chain for the purpose of improving the dispersion of polyethylene oxide has been proposed (see, for example, Patent Document 6). Although very good in terms of production, there was a problem that the polyether chain increased hygroscopicity and lowered solder heat resistance. Thus, there is a demand for an epoxy resin composition for semiconductor encapsulation that is excellent in solder heat resistance and responds to production problems such as releasability, continuous moldability, appearance of molded products, mold contamination, and the like.
本発明は、上記のような問題点を解決するためになされたもので、その目的とするところは半田耐熱性が良好でかつ生産性に優れた半導体封止用エポキシ樹脂組成物及び半導体装置を提供するものである。 The present invention has been made in order to solve the above-described problems, and an object of the present invention is to provide an epoxy resin composition for semiconductor encapsulation and a semiconductor device having good solder heat resistance and excellent productivity. It is to provide.
本発明は、
[1](A)エポキシ樹脂、(B)フェノール樹脂、(C)カルボキシル基を有するオルガノポリシロキサン及び(D)酸化ポリエチレンを必須成分とすることを特徴とする半導体封止用エポキシ樹脂組成物、
[2]前記(C)カルボキシル基を有するオルガノポリシロキサンが一般式(1)で表されるオルガノポリシロキサンである第[1]項記載の半導体封止用エポキシ樹脂組成物、
The present invention
[1] An epoxy resin composition for semiconductor encapsulation, comprising (A) an epoxy resin, (B) a phenol resin, (C) an organopolysiloxane having a carboxyl group and (D) polyethylene oxide as essential components,
[2] The epoxy resin composition for semiconductor encapsulation according to item [1], wherein the organopolysiloxane having a carboxyl group (C) is an organopolysiloxane represented by the general formula (1);
[3]前記(D)酸化ポリエチレンが高密度ポリエチレンを酸化することで得られるものである第[1]又は[2]項記載の半導体封止用エポキシ樹脂組成物、
[4]前記(D)酸化ポリエチレンの最大粒子径が150μm以下であり、かつ平均粒子径が0.1〜100μmである第[1]、[2]又は[3]項のいずれかに記載の半導体封止用エポキシ樹脂組成物、
[5]前記(D)酸化ポリエチレンの滴点が100〜130℃である第[1]ないし[4]項のいずれかに記載の半導体封止用エポキシ樹脂組成物、
[6]前記(C)カルボキシル基を有するオルガノポリシロキサンとして、あらかじめエポキシ樹脂と硬化促進剤によって反応させたカルボキシル基を有するオルガノポリシロキサンを含む第[1]ないし[5]項のいずれかに記載の半導体封止用エポキシ樹脂組成物、
[7]前記(C)カルボキシル基を有するオルガノポリシロキサンと前記(D)酸化ポリエチレンとの重量比(C)/(D)が5/1〜1/5である第[1]ないし[6]項のいずれかに記載の半導体封止用エポキシ樹脂組成物、
[8]前記(A)エポキシ樹脂が、一般式(2)で表されるエポキシ樹脂である第[1]ないし[7]項のいずれかに記載の半導体封止用エポキシ樹脂組成物、
[3] The epoxy resin composition for semiconductor encapsulation according to [1] or [2], wherein (D) the oxidized polyethylene is obtained by oxidizing high-density polyethylene,
[4] The [D], [2] or [3], wherein the (D) oxidized polyethylene has a maximum particle size of 150 μm or less and an average particle size of 0.1 to 100 μm. Epoxy resin composition for semiconductor encapsulation,
[5] The epoxy resin composition for semiconductor encapsulation according to any one of [1] to [4], wherein the dropping point of (D) the oxidized polyethylene is 100 to 130 ° C.,
[6] Any one of [1] to [5], wherein (C) the organopolysiloxane having a carboxyl group includes an organopolysiloxane having a carboxyl group that has been reacted in advance with an epoxy resin and a curing accelerator. Epoxy resin composition for semiconductor encapsulation,
[7] The [1] to [6], wherein the weight ratio (C) / (D) of the (C) carboxyl group-containing organopolysiloxane and the (D) polyethylene oxide is 5/1 to 1/5. The epoxy resin composition for semiconductor encapsulation according to any one of the items,
[8] The epoxy resin composition for semiconductor encapsulation according to any one of [1] to [7], wherein the (A) epoxy resin is an epoxy resin represented by the general formula (2),
[9]前記(B)フェノール樹脂が、一般式(3)で表されるフェノール樹脂である第[1]ないし[8]項のいずれかに記載の半導体封止用エポキシ樹脂組成物、 [9] The epoxy resin composition for semiconductor encapsulation according to any one of [1] to [8], wherein the (B) phenol resin is a phenol resin represented by the general formula (3),
[10]第[1]ないし[9]項のいずれかに記載の半導体封止用エポキシ樹脂組成物を用いて半導体素子を封止してなることを特徴とする半導体装置、
である。
[10] A semiconductor device comprising a semiconductor element sealed using the epoxy resin composition for semiconductor sealing according to any one of [1] to [9],
It is.
本発明に従うと、半導体装置実装時において優れた半田耐熱性を示すとともに、半導体素子の封止成形時における従来の欠陥である離型性、連続成形性、成形品外観、金型汚れ等の課題を解決することができる半導体封止用エポキシ樹脂組成物が得られるものである。 According to the present invention, it exhibits excellent solder heat resistance when mounted on a semiconductor device, and problems such as releasability, continuous formability, appearance of molded product, mold contamination, etc., which are conventional defects at the time of sealing molding of semiconductor elements. It is possible to obtain an epoxy resin composition for semiconductor encapsulation that can solve the above.
本発明は、カルボキシル基を有するオルガノポリシロキサン及び酸化ポリエチレンを必須成分として配合することにより、半導体素子の封止成形時において離型性、連続成形性、成形品外観が良好で金型汚れも発生し難いという優れた生産性を示すとともに、半導体装置実装時の半田耐熱性にすぐれた半導体封止用エポキシ樹脂組成物が得られるものである。
以下、本発明について詳細に説明する。
In the present invention, by incorporating an organopolysiloxane having a carboxyl group and polyethylene oxide as essential components, mold release, continuous moldability, molded product appearance are good, and mold fouling occurs when semiconductor elements are encapsulated. Thus, an epoxy resin composition for semiconductor encapsulation having excellent productivity that is difficult to perform and excellent in solder heat resistance when mounted on a semiconductor device can be obtained.
Hereinafter, the present invention will be described in detail.
本発明に用いるエポキシ樹脂としては、1分子内にエポキシ基を2個以上有するモノマー、オリゴマー、ポリマー全般を言い、その分子量、分子構造を特に限定するものではないが、例えばビフェニル型エポキシ樹脂、ビスフェノール型エポキシ樹脂、スチルベン型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、トリフェノールメタン型エポキシ樹脂、アルキル変性トリフェノールメタン型エポキシ樹脂、トリアジン核含有エポキシ樹脂、ジシクロペンタジエン変性フェノール型エポキシ樹脂、フェノールアラルキル型エポキシ樹脂(フェニレン骨格、ビフェニレン骨格等を有する)、ナフトール型エポキシ樹脂等が挙げられ、これらは単独でも混合して用いてもよい。耐半田クラック性の向上という点からは、一般式(2)に示されるエポキシ樹脂が好ましい。
本発明に用いるフェノール樹脂としては、1分子内にフェノール性水酸基を2個以上有するモノマー、オリゴマー、ポリマー全般を言い、その分子量、分子構造を特に限定するものではないが、例えばフェノールノボラック樹脂、クレゾールノボラック樹脂、ジシクロペンタジエン変性フェノール樹脂、テルペン変性フェノール樹脂、トリフェノールメタン型樹脂、フェノールアラルキル樹脂(フェニレン骨格、ビフェニレン骨格等を有する)、ナフトールアラルキル樹脂等が挙げられ、これらは単独でも混合して用いてもよい。耐半田クラック性の向上という点からは、一般式(3)に示されるフェノール樹脂が好ましい。またフェノール樹脂の配合量としては、全エポキシ樹脂のエポキシ基数と全フェノール樹脂のフェノール性水酸基数の比が0.8〜1.3であることが好ましい。
本発明に用いるカルボキシル基を有するオルガノポリシロキサンは、1分子中に1個以上のカルボキシル基を有するオルガノポリシロキサンであり、酸化ポリエチレンと併用する必要がある。カルボキシル基を有するオルガノポリシロキサンを単独で使用した場合、離型性が不十分となり、連続成形性が低下する。酸化ポリエチレンを単独使用した場合は離型性が不十分で、十分な離型性を得る為には配合量を多くする必要性があり、その場合、密着性の低下により半田耐熱性が低下し、かつ成形品の外観も悪い。カルボキシル基を有するオルガノポリシロキサンと酸化ポリエチレンと併用することにより、酸化ポリエチレンを相溶化させることができ、酸化ポリエチレンの配合量が少なくとも離型性が向上し、外観と離型性を両立でき、連続成形が良好で半田耐熱性の低下も引き起こさない。尚、その併合配合割合は重量比で5/1〜1/5が望ましく、この範囲が最も効果が高い。 The organopolysiloxane having a carboxyl group used in the present invention is an organopolysiloxane having one or more carboxyl groups in one molecule, and needs to be used in combination with polyethylene oxide. When the organopolysiloxane having a carboxyl group is used alone, the releasability becomes insufficient and the continuous moldability is lowered. In the case of using polyethylene oxide alone, the releasability is insufficient, and in order to obtain sufficient releasability, it is necessary to increase the blending amount. Also, the appearance of the molded product is bad. By using in combination with an organopolysiloxane having a carboxyl group and polyethylene oxide, the polyethylene oxide can be compatibilized, and the blending amount of the polyethylene oxide can at least improve the releasability, and can achieve both appearance and releasability. Molding is good and does not cause a decrease in solder heat resistance. The blending ratio is preferably 5/1 to 1/5 in weight ratio, and this range is most effective.
カルボキシル基を有するオルガノポリシロキサンとしては、一般式(1)で示されるオルガノポリシロキサンが望ましい。一般式(1)の式中のRは一価の有機基であり、全有機基の内、少なくとも1個以上がカルボキシル基を有する炭素数1〜40の一価の有機基であり、残余の有機基は水素、フェニル基、又はメチル基から選ばれる一価の基であり、互いに同一であっても異なっていてもよい。カルボキシル基を有する一価の有機基の炭素数が上限を超えるとレジンとの相溶性が悪化し、成形品の外観が悪化する恐れがある。また、一般式(1)中のnは平均値で、1〜50の整数である。nの値が上限値を超えるとオイル単体の粘度が高くなり流動性が悪化する恐れがある。一般式(1)で示されるオルガノポリシロキサンを使用すると、流動性の低下を引き起こさず、成形品の外観が特に良好になる。更にエポキシ樹脂と硬化促進剤により予め溶融・反応させることで連続成形後の型汚れが発生し難く、連続成形性が極めて良好になる。ここで言う硬化促進剤とは、カルボキシル基とエポキシ基との樹脂との硬化反応を促進させるものであればよく、後述するエポキシ基とフェノール性水酸基との硬化反応を促進させる硬化促進剤と同じものを用いることができる。尚、一般式(1)で示されるオルガノポリシロキサンのカルボキシル基を有する一価の有機基の炭素数とは、一価の有機基中の炭化水素基とカルボキシル基の炭素数を合計したものを指す。
カルボキシル基を有するオルガノポリシロキサンの配合量は、全エポキシ樹脂組成物中0.01〜3重量%が好ましい。下限を下回ると効果が不十分で離型剤による成形品外観汚れを抑えることができない恐れがあり、上限を超えるとオルガノポリシロキサン自体により、成形品の外観が汚れる恐れがある。
また、本発明に用いられるカルボキシル基を有するオルガノポリシロキサンを添加する効果を損なわない範囲で他のオルガノポリシロキサンを併用することができる。
As for the compounding quantity of the organopolysiloxane which has a carboxyl group, 0.01 to 3 weight% is preferable in all the epoxy resin compositions. If the value is below the lower limit, the effect is insufficient and the appearance of the molded product due to the release agent may not be suppressed. If the value exceeds the upper limit, the appearance of the molded product may be stained by the organopolysiloxane itself.
Moreover, other organopolysiloxane can be used together in the range which does not impair the effect of adding the organopolysiloxane having a carboxyl group used in the present invention.
本発明で用いられる酸化ポリエチレンは、カルボン酸等からなる極性基と長い炭素鎖からなる非極性基を有しているものである。本発明で用いられる酸化ポリエチレンの製法については、特に限定するものではないが、例えば、高密度ポリエチレンを酸化することで得られるものなどが好ましい。本発明で用いられる酸化ポリエチレンワックスの滴点は60〜140℃好ましく、より好ましくは100〜130℃である。滴点が下限値未満だと熱安定性が十分でないため、連続成形時に酸化ポリエチレンワックスの焼き付きが発生し、離型性が悪化し、連続成形性を損なう恐れがある。上限値を越えるとエポキシ樹脂組成物の硬化の際、酸化ポリエチレンワックスが十分に溶融しないことにより、酸化ポリエチレンワックスの分散性が低下し、酸化ポリエチレンワックスの硬化物表面への偏析による金型汚れや樹脂硬化物外観の悪化を引き起こす恐れがある。平均粒径は0.1〜100μmが好ましく、下限値未満だと酸化ポリエチレンワックスとエポキシ樹脂マトリックスとの相溶性がよすぎるため、硬化物表面に染み出すことが出来ず、十分な離型付与効果が得られない恐れがある。上限値を越えると酸化ポリエチレンワックスが偏析し、金型汚れや樹脂硬化物外観の悪化を引き起こす恐れがある。酸化ポリエチレンワックスの含有量はエポキシ樹脂組成物中に0.01〜1重量%であることが好ましい。下限値未満だと離型性不足となる恐れがあり、上限値を越えるとリードフレーム部材との密着性が損なわれ、半田処理時に部材との剥離が発生する恐れがある。また、金型汚れや樹脂硬化物外観の悪化を引き起こす恐れがある。 The polyethylene oxide used in the present invention has a polar group composed of carboxylic acid or the like and a nonpolar group composed of a long carbon chain. Although it does not specifically limit about the manufacturing method of the polyethylene oxide used by this invention, For example, what is obtained by oxidizing a high density polyethylene etc. are preferable. The dropping point of the oxidized polyethylene wax used in the present invention is preferably 60 to 140 ° C, more preferably 100 to 130 ° C. If the drip point is less than the lower limit, the thermal stability is not sufficient, and seizure of oxidized polyethylene wax occurs during continuous molding, which may deteriorate mold release properties and impair continuous moldability. When the upper limit is exceeded, when the epoxy resin composition is cured, the oxidized polyethylene wax is not sufficiently melted, so that the dispersibility of the oxidized polyethylene wax is reduced. There is a risk of deteriorating the appearance of the cured resin. The average particle size is preferably 0.1 to 100 μm, and if it is less than the lower limit, the compatibility between the oxidized polyethylene wax and the epoxy resin matrix is too good, so that the cured product surface cannot be exuded, and sufficient release imparting effect is obtained. May not be obtained. When the upper limit is exceeded, the oxidized polyethylene wax is segregated, which may cause mold contamination and deterioration of the appearance of the cured resin. The content of the oxidized polyethylene wax is preferably 0.01 to 1% by weight in the epoxy resin composition. If it is less than the lower limit value, the releasability may be insufficient, and if it exceeds the upper limit value, the adhesion to the lead frame member may be impaired, and peeling from the member may occur during the soldering process. Moreover, there exists a possibility of causing deterioration of mold | die stain | pollution | contamination and resin hardened | cured material external appearance.
本発明に用いられる酸化ポリエチレンを添加する効果を損なわない範囲であれば、それ以外にも他の離型剤を併用することもできる。例えば、カルナバワックス等の天然ワックス、ステアリン酸亜鉛等の高級脂肪酸の金属塩類、脂肪酸エステル類等が挙げられる。
また、酸化ポリエチレンの配合量としては、全エポキシ樹脂組成物中に0.02〜1重量%が好ましい。下限を下回ると十分な離型性が得られない恐れがあり、上限を超えると密着性の低下を引き起こす恐れがある。
As long as the effect of adding the polyethylene oxide used in the present invention is not impaired, other release agents may be used in combination. Examples thereof include natural waxes such as carnauba wax, metal salts of higher fatty acids such as zinc stearate, and fatty acid esters.
Moreover, as a compounding quantity of a polyethylene oxide, 0.02-1 weight% is preferable in all the epoxy resin compositions. If it is below the lower limit, sufficient releasability may not be obtained, and if it exceeds the upper limit, adhesion may be lowered.
本発明のエポキシ樹脂組成物は、エポキシ樹脂、フェノール硬化剤、カルボキシル基を有するオルガノポリシロキサン、及び酸化ポリエチレンを必須成分とするが、その他の主要構成成分として硬化促進剤、無機充填材等を配合することができる。
本発明に用いる硬化促進剤としては、エポキシ基とフェノール性水酸基との硬化反応を促進させるものであればよく、一般に封止材料に使用するものを用いることができる。例えば、1,8−ジアザビシクロ(5,4,0)ウンデセン−7等のジアザビシクロアルケン及びその誘導体、トリフェニルホスフィン、メチルジフェニルホスフィン等の有機ホスフィン類、2−メチルイミダゾール等のイミダゾール化合物、テトラフェニルホスホニウム・テトラフェニルボレート等のテトラ置換ホスホニウム・テトラ置換ボレート等が挙げられ、これらは単独でも混合して用いても差し支えない。
The epoxy resin composition of the present invention contains an epoxy resin, a phenol curing agent, an organopolysiloxane having a carboxyl group, and polyethylene oxide as essential components, but includes a curing accelerator, an inorganic filler, etc. as other main components. can do.
As a hardening accelerator used for this invention, what is necessary is just to accelerate the hardening reaction of an epoxy group and a phenolic hydroxyl group, and what is generally used for a sealing material can be used. For example, diazabicycloalkenes such as 1,8-diazabicyclo (5,4,0) undecene-7 and derivatives thereof, organic phosphines such as triphenylphosphine and methyldiphenylphosphine, imidazole compounds such as 2-methylimidazole, tetra Examples thereof include tetra-substituted phosphonium and tetra-substituted borates such as phenylphosphonium and tetraphenylborate, and these may be used alone or in combination.
本発明に用いる無機充填材としては、一般に半導体封止用エポキシ樹脂組成物に使用されているものを用いることができる。例えば、溶融シリカ、結晶シリカ、タルク、アルミナ、窒化珪素等が挙げられ、最も好適に使用されるものとしては、球状の溶融シリカである。これらの無機充填剤は、単独でも混合して用いても差し支えない。またこれらがカップリング剤により表面処理されていてもかまわない。無機充填材の形状としては、流動性改善のために、できるだけ真球状であり、かつ粒度分布がブロードであることが好ましい。無機充填材の配合量は、全エポキシ樹脂組成物中78〜93重量%が好ましい。下限値を下回ると十分な耐半田性が得られない恐れがあり、上限値を超えると十分な流動性が得られない恐れがある。 As an inorganic filler used for this invention, what is generally used for the epoxy resin composition for semiconductor sealing can be used. Examples thereof include fused silica, crystalline silica, talc, alumina, silicon nitride and the like, and the most preferably used is spherical fused silica. These inorganic fillers may be used alone or in combination. These may be surface-treated with a coupling agent. The shape of the inorganic filler is preferably as spherical as possible and the particle size distribution is broad in order to improve fluidity. As for the compounding quantity of an inorganic filler, 78 to 93 weight% is preferable in all the epoxy resin compositions. If the lower limit is not reached, sufficient solder resistance may not be obtained, and if the upper limit is exceeded, sufficient fluidity may not be obtained.
本発明のエポキシ樹脂組成物は、エポキシ樹脂、フェノール硬化剤、カルボキシル基を有するオルガノポリシロキサン、酸化ポリエチレン、硬化促進剤、及び無機充填材から構成されるが、更にこれ以外に必要に応じて、エポキシシラン、メルカプトシラン、アミノシラン、アルキルシラン、ウレイドシラン、ビニルシラン等のシランカップリング剤や、チタネートカップリング剤、アルミニウムカップリング剤、アルミニウム/ジルコニウムカップリング剤等のカップリング剤、カーボンブラック等の着色剤、及び、シリコーンオイル、ゴム等の低応力添加剤、臭素化エポキシ樹脂や三酸化アンチモン、水酸化アルミニウム、水酸化マグネシウム、ほう酸亜鉛、モリブデン酸亜鉛、フォスファゼン等の難燃剤等の添加剤を適宜配合しても差し支えない。 The epoxy resin composition of the present invention is composed of an epoxy resin, a phenol curing agent, an organopolysiloxane having a carboxyl group, polyethylene oxide, a curing accelerator, and an inorganic filler. Silane coupling agents such as epoxy silane, mercapto silane, amino silane, alkyl silane, ureido silane, vinyl silane, titanate coupling agent, aluminum coupling agent, coupling agent such as aluminum / zirconium coupling agent, coloring of carbon black, etc. And additives such as low-stress additives such as silicone oil and rubber, flame retardants such as brominated epoxy resin, antimony trioxide, aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate, and phosphazene. Difference even if blended Not support.
また、本発明のエポキシ樹脂組成物は、ミキサー等を用いて原料を充分に均一に混合した後、更に熱ロール又はニーダー等で溶融混練し、冷却後粉砕して得られる。
本発明のエポキシ樹脂組成物を用いて、半導体素子等の各種の電子部品を封止し、半導体装置を製造するには、トランスファーモールド、コンプレッションモールド、インジェクションモールド等の従来からの成形方法で硬化成形すればよい。
The epoxy resin composition of the present invention can be obtained by mixing the raw materials sufficiently uniformly using a mixer or the like, then melt-kneading with a hot roll or a kneader, cooling and pulverizing.
The epoxy resin composition of the present invention is used to encapsulate various electronic components such as semiconductor elements, and to manufacture semiconductor devices by conventional molding methods such as transfer molding, compression molding, and injection molding. do it.
以下に本発明の実施例を示すが、本発明はこれらに限定されるものではない。配合割合は重量部とする。
実施例1
エポキシ樹脂1:式(2)で表されるエポキシ樹脂(日本化薬(株)製、NC3000P、軟化点58℃、エポキシ当量274、以下E−1という)
8.13重量部
Example 1
Epoxy resin 1: epoxy resin represented by formula (2) (Nippon Kayaku Co., Ltd., NC3000P, softening point 58 ° C., epoxy equivalent 274, hereinafter referred to as E-1)
8.13 parts by weight
フェノール樹脂1:式(3)で表されるエポキシ樹脂(明和化成(株)製、MEH−7851SS、軟化点107℃、水酸基当量203、以下H−1という)
5.47重量部
5.47 parts by weight
式(4)で示されるオルガノポリシロキサン:オルガノポリシロキサン1
0.20重量部
0.20 parts by weight
酸化ポリエチレンワックス1(滴点120℃、平均粒径50μm) 0.20重量部
1,8−ジアザビシクロ(5,4,0)ウンデセン−7(以下、DBUという)
0.20重量部
溶融球状シリカ(平均粒径25μm) 85.0重量部
カップリング剤(γ−グリシドキシプロピルトリメトキシシラン) 0.40重量部
カーボンブラック 0.40重量部
を混合し、熱ロールを用いて、95℃で8分間混練して冷却後粉砕し、エポキシ樹脂組成物を得た。得られたエポキシ樹脂組成物を、以下の方法で評価した。結果を表1に示す。
Oxidized polyethylene wax 1 (drop point 120 ° C., average particle size 50 μm) 0.20 parts by weight 1,8-diazabicyclo (5,4,0) undecene-7 (hereinafter referred to as DBU)
0.20 parts by weight Fused spherical silica (average particle size 25 μm) 85.0 parts by weight Coupling agent (γ-glycidoxypropyltrimethoxysilane) 0.40 parts by weight Carbon black 0.40 parts by weight was mixed and heated Using a roll, the mixture was kneaded at 95 ° C. for 8 minutes, cooled and pulverized to obtain an epoxy resin composition. The obtained epoxy resin composition was evaluated by the following methods. The results are shown in Table 1.
評価方法
スパイラルフロー:EMMI−1−66に準じたスパイラルフロー測定用金型を用いて、金型温度175℃、注入圧力6.9MPa、硬化時間120秒で測定した。単位はcm。判定基準は70cm未満を不合格(×)、70cm以上を合格(○)とした。
Evaluation method Spiral flow: Using a spiral flow measurement mold according to EMMI-1-66, measurement was performed at a mold temperature of 175 ° C., an injection pressure of 6.9 MPa, and a curing time of 120 seconds. The unit is cm. The criteria for the judgment were less than 70 cm as rejected (x), and 70 cm or more as acceptable (◯).
連続成形性:低圧トランスファー自動成形機を用いて、金型温度175℃、注入圧力9.6MPa、硬化時間70秒で80pQFP(CuL/F、パッケージ外寸:14mm×20mm×2mm厚、パッドサイズ:6.5mm×6.5mm、チップサイズ6.0mm×6.0mm)を連続で700ショットまで成形した。判定基準は未充填等全く問題なく700ショットまで連続成形できたものを◎、未充填等全く問題なく500ショットまで連続成形できたものを○、それ以外を×とした。 Continuous formability: 80 pQFP (CuL / F, package outer dimension: 14 mm × 20 mm × 2 mm thickness, pad size: with a mold temperature of 175 ° C., injection pressure of 9.6 MPa, curing time of 70 seconds, using a low-pressure transfer automatic molding machine 6.5 mm × 6.5 mm, chip size 6.0 mm × 6.0 mm) was continuously molded up to 700 shots. Judgment criteria were ◎ for those that could be continuously molded up to 700 shots without any problems such as unfilled, ◯ for those that could be continuously molded up to 500 shots without any problems such as unfilled, and x otherwise.
成形品外観及び金型汚れ:上記連続成形において500及び700ショット経過後のパッケージ及び金型について、目視で汚れを評価した。パッケージ外観判断及び金型汚れ基準は、汚れているものを×、700ショットまで汚れていないものを◎で、500ショットまで汚れていないものを○で表す。 Molded Product Appearance and Mold Dirt: Dirt was evaluated visually for the package and mold after 500 and 700 shots in the continuous molding. The package appearance judgment and the mold contamination standard are indicated by “x” when dirty, “◎” when not dirty up to 700 shots, and “◯” when not dirty up to 500 shots.
半田耐熱性:上記連続成形により成形したパッケージを175℃、8時間で後硬化し、得られたパッケージを85℃、相対湿度85%で168時間加湿処理後、別々に240℃と260℃の半田槽に各10個のパッケージを10秒間浸漬した。顕微鏡でパッケージを観察し、クラック発生率[(クラック発生率)=(外部クラック発生パッケージ数)/(全パッケージ数)×100]を算出した。単位は%。評価したパッケージの数は20個。また、半導体素子とエポキシ樹脂組成物界面の密着状態を超音波探傷装置により観察した。評価したパッケージの数は20個。耐半田クラック性判断基準は、240℃及び260℃でのクラック発生率が0%で、かつ剥離なし:◎、240℃でのクラック発生率が0%で、かつ剥離なし:○、クラックもしくは剥離が発生したものは×とした。
Solder heat resistance: The package formed by the above continuous molding is post-cured at 175 ° C. for 8 hours, and the resulting package is humidified at 85 ° C. and 85% relative humidity for 168 hours, and then separately soldered at 240 ° C. and 260 ° C. Ten packages each were immersed in the bath for 10 seconds. The package was observed with a microscope, and the crack generation rate [(crack generation rate) = (number of external crack generation packages) / (total number of packages) × 100] was calculated. Units%. The number of packages evaluated was 20. Moreover, the adhesion state of the semiconductor element and the epoxy resin composition interface was observed with an ultrasonic flaw detector. The number of packages evaluated was 20. The criteria for solder crack resistance are: crack generation rate at 240 ° C. and 260 ° C. is 0% and no peeling: ◎, crack generation rate at 240 ° C. is 0% and no peeling: ○, crack or peeling Those in which the occurred were marked as x.
実施例2〜12、比較例1〜5
表1、表2の配合に従い、実施例1と同様にしてエポキシ樹脂組成物を得て、実施例1と同様にして評価した。結果を表1、表2に示す。
実施例1以外で用いた原材料を以下に示す。
Examples 2-12, Comparative Examples 1-5
According to the composition of Table 1 and Table 2, an epoxy resin composition was obtained in the same manner as in Example 1 and evaluated in the same manner as in Example 1. The results are shown in Tables 1 and 2.
The raw materials used other than Example 1 are shown below.
エポキシ樹脂2:ビフェニル型エポキシ樹脂(ジャパンエポキシレジン(株)製、YX−4000、エポキシ当量190g/eq、融点105℃、以下、E−2という)
エポキシ樹脂3:オルソクレゾールノボラック型エポキシ樹脂(日本化薬(株)製、EOCN−1020 62、エポキシ当量200g/eq、軟化点62℃、以下、E−3という)
フェノール樹脂2:パラキシリレン変性ノボラック型フェノール樹脂(三井化学(株)製、XLC−4L、水酸基当量168g/eq、軟化点62℃、以下H−2という)
Epoxy resin 2: biphenyl type epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., YX-4000, epoxy equivalent 190 g / eq, melting point 105 ° C., hereinafter referred to as E-2)
Epoxy resin 3: Orthocresol novolak type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., EOCN-102062, epoxy equivalent 200 g / eq, softening point 62 ° C., hereinafter referred to as E-3)
Phenol resin 2: paraxylylene-modified novolak-type phenol resin (manufactured by Mitsui Chemicals, XLC-4L, hydroxyl group equivalent 168 g / eq, softening point 62 ° C., hereinafter referred to as H-2)
オルガノポリシロキサン2:式(5)で示されるオルガノポリシロキサン
オルガノポリシロキサン3:式(6)で示されるオルガノポリシロキサン
オルガノポリシロキサン4:式(7)で示されるオルガノポリシロキサン
溶融反応物A:ビスフェノールA型エポキシ樹脂(ジャパンエポキシレジン製、YL−6810、エポキシ当量170g/eq、融点47℃)66.1重量部を140℃で加温溶融し、オルガノポリシロキサン3(式(6)で示されるオルガノポリシロキサン)33.1重量部及びトリフェニルホスフィン0.8重量部を添加して、30分間溶融混合して溶融反応物Aを得た。
酸化ポリエチレンワックス2(滴点110℃、平均粒径80μm)
酸化ポリエチレンワックス3(滴点125℃、平均粒径5μm)
カルナバワックス
Molten reaction product A: Bisphenol A type epoxy resin (manufactured by Japan Epoxy Resin, YL-6810, epoxy equivalent 170 g / eq, melting point 47 ° C.) 66.1 parts by weight was heated and melted at 140 ° C. to prepare organopolysiloxane 3 (formula 33.1 parts by weight of the organopolysiloxane represented by (6) and 0.8 parts by weight of triphenylphosphine were added and melt-mixed for 30 minutes to obtain a molten reactant A.
Oxidized polyethylene wax 2 (drop point 110 ° C., average particle size 80 μm)
Oxidized polyethylene wax 3 (drop point 125 ° C., average particle size 5 μm)
Carnauba wax
本発明に従うと、半導体装置実装時において優れた半田耐熱性を示すとともに、半導体素子の封止成形時における従来の欠陥である離型性、連続成形性、成形品外観、金型汚れ等の課題を解決することができるため、工業的な樹脂封止型半導体装置、特に表面実装用の樹脂封止型半導体装置の製造に好適に用いることができる。 According to the present invention, it exhibits excellent solder heat resistance when mounted on a semiconductor device, and problems such as releasability, continuous formability, appearance of molded product, mold contamination, etc., which are conventional defects at the time of sealing molding of semiconductor elements. Therefore, it can be suitably used for manufacturing an industrial resin-sealed semiconductor device, particularly a resin-sealed semiconductor device for surface mounting.
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