JP2857444B2 - Sealing resin composition and semiconductor sealing device - Google Patents

Sealing resin composition and semiconductor sealing device

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Publication number
JP2857444B2
JP2857444B2 JP1649590A JP1649590A JP2857444B2 JP 2857444 B2 JP2857444 B2 JP 2857444B2 JP 1649590 A JP1649590 A JP 1649590A JP 1649590 A JP1649590 A JP 1649590A JP 2857444 B2 JP2857444 B2 JP 2857444B2
Authority
JP
Japan
Prior art keywords
resin composition
phosphazene
resin
sealing
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1649590A
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Japanese (ja)
Other versions
JPH03221518A (en
Inventor
和弘 沢井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Chemical Corp
Original Assignee
Toshiba Chemical Corp
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Filing date
Publication date
Application filed by Toshiba Chemical Corp filed Critical Toshiba Chemical Corp
Priority to JP1649590A priority Critical patent/JP2857444B2/en
Publication of JPH03221518A publication Critical patent/JPH03221518A/en
Application granted granted Critical
Publication of JP2857444B2 publication Critical patent/JP2857444B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は、耐湿性、半田耐熱性、成形性に優れた封止
用樹脂組成物および半導体封止装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a sealing resin composition excellent in moisture resistance, solder heat resistance and moldability, and a semiconductor sealing device.

(従来の技術) 近年、半導体、集積回路の分野における高集積化、高
信頼性化の技術開発と同時に、半導体装置の実装工程の
自動化が推進されている。例えば、フラットパッケージ
型の半導体装置を回路基板に取り付ける場合、従来はリ
ードピン毎に半田付けを行っていたが、最近は半導体装
置全体を250℃に加熱した半田浴に浸漬して、一度に半
田付けを行う方法が採用されている。
(Prior Art) In recent years, at the same time as the development of high integration and high reliability technologies in the field of semiconductors and integrated circuits, automation of a semiconductor device mounting process has been promoted. For example, when attaching a flat package type semiconductor device to a circuit board, soldering has conventionally been performed for each lead pin, but recently, the entire semiconductor device has been immersed in a solder bath heated to 250 ° C and soldered all at once. Is performed.

従来のエポキシ樹脂、ノボラック型フェノール樹脂お
よび無機質充填剤からなる樹脂組成物で封止した半導体
装置では、装置全体の半田浴浸漬を行うと耐湿性が低下
するという欠点がある。特に吸湿した半導体装置を半田
浴に浸漬すると、封止樹脂と半導体チップとの間あるい
は封止樹脂とフレームとの間に剥がれが生じ、著しい耐
湿劣化をおこし、電極の腐蝕による断線や水分によるリ
ーク電流を生じ、長期間の信頼性を保証することができ
ないという欠点がある。このため、耐湿性の影響が少な
く、半導体装置全体の半田浴浸漬をしても耐湿劣化の少
ない成形性のよい封止用樹脂の開発が強く要望されてい
た。
A conventional semiconductor device encapsulated with a resin composition comprising an epoxy resin, a novolak-type phenol resin and an inorganic filler has a drawback that when the entire device is immersed in a solder bath, the moisture resistance is reduced. In particular, when a semiconductor device that has absorbed moisture is immersed in a solder bath, peeling occurs between the sealing resin and the semiconductor chip or between the sealing resin and the frame, causing significant moisture resistance deterioration, disconnection due to electrode corrosion, and leakage due to moisture. There is a disadvantage that current is generated and long-term reliability cannot be guaranteed. For this reason, there has been a strong demand for the development of an encapsulating resin that has little influence on moisture resistance and has good moldability with little moisture resistance deterioration even when the entire semiconductor device is immersed in a solder bath.

(発明が解決しようとする課題) 本発明は、上記の欠点を解消し、要望に応えるために
なされたもので、吸湿の影響が少なく、特に半田浴浸漬
後の耐湿性および半田耐熱性に優れた成形性のよい封止
用樹脂組成物および半導体封止装置を提供しようとする
ものである。
(Problems to be Solved by the Invention) The present invention has been made to solve the above-mentioned drawbacks and to meet the demand, and has a small influence of moisture absorption, and particularly has excellent moisture resistance and solder heat resistance after immersion in a solder bath. An object of the present invention is to provide a sealing resin composition having good moldability and a semiconductor sealing device.

[発明の構成] (課題を解決するための手段) 本発明者は、上記の目的を達成しようと鋭意研究を重
ねた結果、ホスファゼン系フッ素ゴムを配合するによっ
て、半田浴浸漬後の耐湿性および半田耐熱性が向上し、
かつ成形性がよくなることを見いだし、本発明を完成し
たものである。すなわち、本発明は (A)エポキシ樹脂 (B)ノボラック型フェノール樹脂 (C)次の一般式で示されるホスファゼン系フッ素ゴム
および (但し、式中R1はCpH2pCqF2q+1を、R2はCtH2tCsF
2s+1を、l,m,n,p,q,s,tは1以上の整数を表す) (D)無機質充填剤 を必須成分とし、樹脂組成物に対して前記(C)のホス
ファゼン系フッ素ゴムを0.1〜5重量%、また前記
(D)の無機質充填剤を25〜90重量%含有してなること
を特徴とする封止用樹脂組成物およびこの封止用樹脂組
成物の硬化物で半導体ペレットが封止されてなることを
特徴とする半導体封止装置である。
[Constitution of the Invention] (Means for Solving the Problems) As a result of intensive studies to achieve the above object, the present inventor has found that by adding a phosphazene-based fluororubber, moisture resistance after immersion in a solder bath and Improved solder heat resistance,
In addition, they found that the moldability was improved, and completed the present invention. That is, the present invention provides (A) an epoxy resin, (B) a novolak-type phenol resin, and (C) a phosphazene-based fluororubber represented by the following general formula: (Where R 1 is C p H 2p C q F 2q + 1 and R 2 is C t H 2t C s F
2s + 1 , l, m, n, p, q, s, and t represent an integer of 1 or more.) (D) Inorganic filler is an essential component, and the phosphazene-based resin (C) is used for the resin composition. A sealing resin composition comprising 0.1 to 5% by weight of a fluororubber and 25 to 90% by weight of the inorganic filler (D), and a cured product of the sealing resin composition. Wherein the semiconductor pellet is sealed.

以下、本発明を詳細に説明する。 Hereinafter, the present invention will be described in detail.

本発明に用いる(A)エポキシ樹脂としては、その分
子中にエポキシ基を少なくとも2個有する化合物である
限り、分子構造、分子量など特に制限はなく、一般に封
止用材料として使用されているものを広く包含すること
ができる。例えば、ビスフェノール型の芳香族系、シク
ロヘキサン誘導体等脂肪族系、さらに次の一般式で示さ
れるエポキシノボラック系の樹脂が挙げられる。
The epoxy resin (A) used in the present invention is not particularly limited in molecular structure, molecular weight, etc., as long as it is a compound having at least two epoxy groups in its molecule. Can be widely encompassed. Examples thereof include bisphenol-type aromatic resins, aliphatic resins such as cyclohexane derivatives, and epoxy novolak resins represented by the following general formula.

(但し、式中R1は水素原子、ハロゲン原子又はアルキル
基を、R2は水素原子又はアルキル基を、nは1以上の整
数をそれぞれ表す) これらのエポキシ樹脂は単独もしくは2種以上混合して
用いる。
(In the formula, R 1 represents a hydrogen atom, a halogen atom or an alkyl group, R 2 represents a hydrogen atom or an alkyl group, and n represents an integer of 1 or more.) These epoxy resins may be used alone or in combination of two or more. Used.

本発明に用いる(B)ノボラック型フェノール樹脂と
しては、フェノール、アルキルフェノール等のフェノー
ル類とホルムアルデヒドあるいはパラホルムアルデヒド
とを反応させて得られるノボラック型フェノール樹脂、
およびこれらの変性樹脂、例えばエポキシ化もしくはブ
チル化ノボラック型フェノール樹脂等が挙げられ、これ
らの樹脂は単独もしくは2種以上混合して用いる。ノボ
ラック型フェノール樹脂の配合割合は、前述したエポキ
シ樹脂のエポキシ基(a)とノボラック型フェノール樹
脂のフェノール性水酸基(b)との当量比[(a)/
(b)]が0.1〜10の範囲内であることが望ましい。当
量比が0.1未満もしくは10を超えると、耐湿性、成形作
業性および硬化物の電気特性が悪くなり、いずれの場合
も好ましくない。従って、上記の範囲内に限定するのが
よい。
Novolak-type phenol resins (B) used in the present invention include novolak-type phenol resins obtained by reacting phenols such as phenol and alkylphenol with formaldehyde or paraformaldehyde.
And modified resins thereof, for example, epoxidized or butylated novolak type phenol resins, and these resins are used alone or in combination of two or more. The mixing ratio of the novolak type phenol resin is the equivalent ratio of the epoxy group (a) of the epoxy resin and the phenolic hydroxyl group (b) of the novolak type phenol resin [(a) /
(B)] is preferably in the range of 0.1 to 10. If the equivalent ratio is less than 0.1 or exceeds 10, the moisture resistance, the molding workability and the electrical properties of the cured product are deteriorated, and any case is not preferred. Therefore, it is better to limit to the above range.

本発明に用いる(C)ホスファゼン系フッ素ゴムとし
ては、例えば前記一般式で示したものが用いられる。ホ
スファゼン系フッ素ゴムとしては、例えばジクロロホス
フォニトリルの三量体を熱分解した長鎖ゴム(PNCl2
を含フッ素アルコールと反応させたもの等が挙げられ
る。具体的な化合物としては次のものが挙げられる。
As the (C) phosphazene-based fluororubber used in the present invention, for example, those represented by the above general formula are used. As the phosphazene-based fluororubber, for example, a long-chain rubber (PNCl 2 ) obtained by thermally decomposing a trimer of dichlorophosphonitrile
Is reacted with a fluorinated alcohol. Specific compounds include the following.

これらは単独又は2種以上混合して使用することがで
きる。ホスファゼン系フッ素ゴムの配合割合は、全体の
樹脂組成物に対して0.1〜5重量%含有することが望ま
しい。この割合が0.1重量%未満では半田耐熱性に効果
なく、また5重量%を超えると樹脂粘度が増加する等、
成形性に悪影響を与え、実用に適さず好ましくない。
These can be used alone or in combination of two or more. The phosphazene-based fluororubber is desirably contained in an amount of 0.1 to 5% by weight based on the entire resin composition. If this ratio is less than 0.1% by weight, there is no effect on solder heat resistance, and if it exceeds 5% by weight, the resin viscosity increases.
This has an adverse effect on moldability and is not suitable for practical use and is not preferred.

本発明に用いる(D)無機質充填剤としては、シリカ
粉末、アルミナ、三酸化アンチモン、タルク、炭酸カル
シウム、チタンホワイト、クレー、マイカ、ベンガラ、
ガラス繊維等が挙げられ、これらは単独もしくは2種以
上混合して使用する。これらの中でも特にシリカ粉末や
アルミナ粉末が好ましく、よく使用される。無機質充填
剤の配合割合は、全体の樹脂組成物に対して25〜90重量
%である。その割合が25重量%未満では、耐湿性、半田
耐熱性、機械的特性および成形性が悪くなり、また90重
量%を超えるとカサバリが大きくなり成形性が悪く実用
に適さない。
As the inorganic filler (D) used in the present invention, silica powder, alumina, antimony trioxide, talc, calcium carbonate, titanium white, clay, mica, red iron oxide,
Glass fibers and the like can be mentioned, and these can be used alone or in combination of two or more. Among these, silica powder and alumina powder are particularly preferable and are often used. The mixing ratio of the inorganic filler is 25 to 90% by weight based on the whole resin composition. If the proportion is less than 25% by weight, moisture resistance, solder heat resistance, mechanical properties and moldability deteriorate, and if it exceeds 90% by weight, burrs increase and moldability deteriorates, which is not suitable for practical use.

本発明の封止用樹脂組成物は、エポキシ樹脂、ノボラ
ック型フェノール樹脂、ホスファゼン系フッ素ゴムおよ
び無機質充填剤を必須成分とするが、本発明の目的を損
なわないかぎり、また必要に応じて、天然ワックス類,
合成ワックス類,直鎖脂肪酸の金属塩,酸アミド,エス
テル類,パラフィン類などの離型剤、塩素化パラフィ
ン,ブロム化トルエン,ヘキサブロムベンゼン,三酸化
アンチモンなどの難燃剤、カーボンブラック,ベンガラ
などの着色剤、シランカップリング剤、種々の硬化促進
剤等を適宜添加配合することができる。
The encapsulating resin composition of the present invention contains an epoxy resin, a novolak-type phenol resin, a phosphazene-based fluororubber, and an inorganic filler as essential components, as long as the object of the present invention is not impaired, and if necessary, natural. Waxes,
Release agents such as synthetic waxes, metal salts of linear fatty acids, acid amides, esters, and paraffins; flame retardants such as chlorinated paraffins, brominated toluene, hexabromobenzene, and antimony trioxide; carbon black; , A silane coupling agent, various curing accelerators, and the like can be appropriately added and blended.

本発明の封止用樹脂組成物を成形材料として製造する
場合の一般的な方法は、エポキシ樹脂、ノボラック型フ
ェノール樹脂、ホスファゼン系フッ素ゴム、無機質充填
剤、その他の原料成分を所定の組成比に選んで、ミキサ
ー等によって十分均一に混合した後、更に熱ロールによ
る溶融混合処理、またニーダ等による混合処理を行い、
次いで冷却固化させ、適当な大きさに粉砕して成形材料
とする。そして、この成形材料を電子部品或いは電気部
品の封止に、またそれらの被覆、絶縁等に適用し、優れ
た特性と信頼性を付与することができる。
A general method for producing the encapsulating resin composition of the present invention as a molding material is an epoxy resin, a novolak-type phenol resin, a phosphazene-based fluororubber, an inorganic filler, and other raw material components in a predetermined composition ratio. After selecting and mixing sufficiently uniformly by a mixer, etc., further perform a melt mixing process with a hot roll, or a mixing process with a kneader, etc.
Next, it is cooled and solidified, and pulverized to an appropriate size to obtain a molding material. Then, this molding material can be applied to sealing of electronic parts or electric parts, and their coating, insulation and the like, so that excellent characteristics and reliability can be imparted.

本発明の半導体封止装置は、上記のようにして得られ
た封止用樹脂組成物を用いて半導体ペレットを封止する
ことにより容易に製造することができる。封止の最も一
般的な方法としては、低圧トランスファー成形法がある
が、射出成形、圧縮成形、注型等による封止も可能であ
る。封止用樹脂組成物を封止の際に加熱して硬化させ、
最終的にはこの組成物の硬化物によって封止された半導
体封止装置が得られる。加熱による硬化は150℃以上の
温度で加熱硬化させることが望ましい。封止を行う半導
体ペレットとしては、例えば集積回路、大規模集積回
路、トランジスタ、サイリスタ、ダイオード等で特に限
定されるものではない。
The semiconductor sealing device of the present invention can be easily manufactured by sealing a semiconductor pellet using the sealing resin composition obtained as described above. The most common sealing method is a low-pressure transfer molding method, but sealing by injection molding, compression molding, casting or the like is also possible. The sealing resin composition is cured by heating at the time of sealing,
Finally, a semiconductor sealing device sealed with a cured product of the composition is obtained. Curing by heating is desirably performed by heating at a temperature of 150 ° C. or higher. The semiconductor pellet to be sealed is not particularly limited, for example, with an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, and the like.

(作用) 本発明において、ホスファゼン系フッ素ゴムを用いた
ことによって、目的とする特性が得られるものである。
ホスファゼン系フッ素ゴムは、封止用樹脂組成物と半導
体ペレットとの密着性、また封止用樹脂組成物とリード
フレームとの密着性を向上させ、半田浴に浸漬しても耐
湿性の劣化を少なくすることができる。
(Function) In the present invention, desired properties can be obtained by using a phosphazene-based fluororubber.
The phosphazene-based fluororubber improves the adhesion between the sealing resin composition and the semiconductor pellet, and the adhesion between the sealing resin composition and the lead frame, and reduces the moisture resistance even when immersed in a solder bath. Can be reduced.

(実施例) 次に本発明を実施例によって具体的に説明するが、本
発明は、以下の実施例に限定されるものではない。以下
の実施例および比較例において「%」とは「重量%」を
意味する。
(Examples) Next, the present invention will be described specifically with reference to examples, but the present invention is not limited to the following examples. In the following Examples and Comparative Examples, “%” means “% by weight”.

実施例 1 クレゾールノボラックエポキシ樹脂(エポキシ当量21
5)18%に、ノボラック型フェノール樹脂(フェノール
当量107)9%、次のホスファゼン系フッ素ゴム0.3%、 溶融シリカ粉末71%、エステル系ワックス0.3%および
シラン系カップリング剤0.4%を配合し、常温で混合し
更に90〜95℃で混練冷却した後、粉砕して成形材料を製
造した。この成形材料を170℃に加熱した金型内にトラ
ンスファー注入し硬化させて成形品(封止品)をつくっ
た。この成形品について耐湿性等の特性を試験したの
で、その結果を第1表に示した。特に耐湿性において本
発明の顕著な効果が認められた。
Example 1 Cresol novolak epoxy resin (epoxy equivalent 21
5) Novolak type phenol resin (phenol equivalent: 107) 9% to 18%, next phosphazene-based fluoro rubber 0.3%, 71% of fused silica powder, 0.3% of ester-based wax and 0.4% of silane-based coupling agent were blended, mixed at room temperature, kneaded and cooled at 90 to 95 ° C, and then pulverized to produce a molding material. This molding material was transferred into a mold heated to 170 ° C. and cured to form a molded product (sealed product). The molded article was tested for properties such as moisture resistance, and the results are shown in Table 1. In particular, a remarkable effect of the present invention was recognized on moisture resistance.

実施例 2〜3 クレゾールノボラックエポキシ樹脂(エポキシ当量21
5)19%に、ノボラック型フェノール樹脂(フェノール
当量107)9%、次のホスファゼン系フッ素ゴムを、 実施例2では0.3%、実施例3では0.3%、シリカ粉末71
%、エステル系ワックス0.3%およびシラン系カップリ
ング剤0.4%を実施例1と同様に配合、混練、粉砕して
成形材料を製造した。また実施例1と同様にして成形品
をつくり耐湿性等の特性試験を行ったので、その結果を
第1表に示した。耐湿性において本発明の顕著な効果が
認められた。
Examples 2-3 Cresol novolak epoxy resin (epoxy equivalent 21
5) To 19%, 9% of novolak type phenol resin (phenol equivalent 107), the following phosphazene-based fluoro rubber, 0.3% in Example 2, 0.3% in Example 3, silica powder 71
%, Ester wax 0.3% and silane coupling agent 0.4% were blended, kneaded and pulverized in the same manner as in Example 1 to produce a molding material. In addition, a molded product was prepared and a characteristic test such as moisture resistance was performed in the same manner as in Example 1. The results are shown in Table 1. The remarkable effect of the present invention on the moisture resistance was recognized.

比較例 クレゾールノボラックエポキシ樹脂(エポキシ当量21
5)19%に、ノボラック型フェノール樹脂(フェノール
当量107)9%、シリカ粉末71%、硬化促進剤0.3%、エ
ステル系ワックス0.3%およびシラン系カップリング剤
0.4%を配合し、実施例1と同様にして成形材料を製造
した。この成形材料を用いて成形品とし、成形品の諸特
性について実施例1と同様にして試験を行い、その結果
を第1表に示した。
Comparative Example Cresol novolak epoxy resin (epoxy equivalent 21
5) 19%, 9% of novolak type phenol resin (phenol equivalent 107), silica powder 71%, curing accelerator 0.3%, ester wax 0.3% and silane coupling agent
0.4% was blended, and a molding material was produced in the same manner as in Example 1. A molded article was formed using this molding material, and a test was performed on various characteristics of the molded article in the same manner as in Example 1. The results are shown in Table 1.

[発明の効果] 以上の説明および第1表から明らかなように、本発明
の封止用樹脂組成物は、半導体チップやリードフレーム
に対する密着性が良いために、吸湿の影響が少なく、半
田浴に浸漬した後でも耐湿性に優れ、その結果、電極の
腐食による断線や水分によるリーク電流の発生などを著
しく低減することができ、しかも長時間にわたって信頼
性を保証することができる。また、250℃の半田浴浸漬
にもかかわらず優れた半田耐熱性を示した。
[Effects of the Invention] As is clear from the above description and Table 1, the sealing resin composition of the present invention has a good adhesion to a semiconductor chip and a lead frame, so that it is less affected by moisture absorption and has a small effect on a solder bath. It is excellent in moisture resistance even after immersion in the electrode. As a result, disconnection due to electrode corrosion and occurrence of leak current due to moisture can be significantly reduced, and reliability can be guaranteed for a long time. In addition, it exhibited excellent solder heat resistance despite immersion in a solder bath at 250 ° C.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 FI //(C08L 63/00 85:02) (58)調査した分野(Int.Cl.6,DB名) C08L 63/00 - 63/10 C08L 85/02 C08G 59/62 H01L 23/29──────────────────────────────────────────────────続 き Continuation of the front page (51) Int.Cl. 6 identification symbol FI // (C08L 63/00 85:02) (58) Investigated field (Int.Cl. 6 , DB name) C08L 63/00- 63/10 C08L 85/02 C08G 59/62 H01L 23/29

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】(A)エポキシ樹脂 (B)ノボラック型フェノール樹脂 (C)次の一般式で示されるホスファゼン系フッ素ゴム
および (但し、式中R1はCpH2pCqF2q+1を、R2はCtH2tCsF
2s+1を、l,m,n,p,q,s,tは1以上の整数を表す) (D)無機質充填剤 を必須成分とし、樹脂組成物に対して前記(C)のホス
ファゼン系フッ素ゴムを0.1〜5重量%、また前記
(D)の無機質充填剤を25〜90重量%含有してなること
を特徴とする封止用樹脂組成物。
1. An epoxy resin (B) a novolak type phenolic resin (C) a phosphazene-based fluororubber represented by the following general formula: (Where R 1 is C p H 2p C q F 2q + 1 and R 2 is C t H 2t C s F
2s + 1 , l, m, n, p, q, s, and t represent an integer of 1 or more. (D) Inorganic filler is an essential component, and the phosphazene-based fluoro rubber of (C) is used with respect to the resin composition. 0.1 to 5% by weight, and 25 to 90% by weight of the inorganic filler (D).
【請求項2】(A)エポキシ樹脂 (B)ノボラック型フェノール樹脂 (C)次の一般式で示されるホスファゼン系フッ素ゴム
および (但し、式中R1はCpH2pCqF2q+1を、R2はCtH2tCsF
2s+1を、l,m,n,p,q,s,tは1以上の整数を表す) (D)無機質充填剤 を必須成分とし、樹脂組成物に対して前記(C)のホス
ファゼン系フッ素ゴムを0.1〜5重量%、また前記
(D)の無機質充填剤を25〜90重量%含有した封止用樹
脂組成分の硬化物により、半導体ペレットが封止されて
なることを特徴とする半導体封止装置。
(A) an epoxy resin; (B) a novolak-type phenolic resin; (C) a phosphazene-based fluororubber represented by the following general formula: (Where R 1 is C p H 2p C q F 2q + 1 and R 2 is C t H 2t C s F
2s + 1 , l, m, n, p, q, s, and t represent an integer of 1 or more.) (D) Inorganic filler is an essential component, and the phosphazene-based resin (C) is used for the resin composition. The semiconductor pellet is sealed with a cured product of a sealing resin composition containing 0.1 to 5% by weight of a fluororubber and 25 to 90% by weight of the inorganic filler (D). Semiconductor sealing device.
JP1649590A 1990-01-26 1990-01-26 Sealing resin composition and semiconductor sealing device Expired - Fee Related JP2857444B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1649590A JP2857444B2 (en) 1990-01-26 1990-01-26 Sealing resin composition and semiconductor sealing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1649590A JP2857444B2 (en) 1990-01-26 1990-01-26 Sealing resin composition and semiconductor sealing device

Publications (2)

Publication Number Publication Date
JPH03221518A JPH03221518A (en) 1991-09-30
JP2857444B2 true JP2857444B2 (en) 1999-02-17

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Family Applications (1)

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Country Status (1)

Country Link
JP (1) JP2857444B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2123712A1 (en) 2008-05-19 2009-11-25 Evonik Degussa GmbH Epoxy resin composition and electronic part

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4635882B2 (en) * 1997-01-17 2011-02-23 日立化成工業株式会社 Epoxy resin molding material for electronic component sealing and electronic component
CN109535612A (en) * 2018-12-06 2019-03-29 南阳医学高等专科学校 A kind of computer chip encapsulation material and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2123712A1 (en) 2008-05-19 2009-11-25 Evonik Degussa GmbH Epoxy resin composition and electronic part

Also Published As

Publication number Publication date
JPH03221518A (en) 1991-09-30

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