JPH07209116A - Pressure sensor - Google Patents
Pressure sensorInfo
- Publication number
- JPH07209116A JPH07209116A JP1315894A JP1315894A JPH07209116A JP H07209116 A JPH07209116 A JP H07209116A JP 1315894 A JP1315894 A JP 1315894A JP 1315894 A JP1315894 A JP 1315894A JP H07209116 A JPH07209116 A JP H07209116A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- pressure sensor
- functional thin
- etching
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Pressure Sensors (AREA)
- Measurement Of Force In General (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、液体及び気体などの圧
力測定用に適した圧力センサに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pressure sensor suitable for measuring the pressure of liquids and gases.
【０００２】[0002]
【従来の技術】従来薄膜を用いた圧力センサは図１ａに
示すように絶縁基板１上に機能性薄膜２を作製した上に
電極薄膜３を作製し、これを図１ｂに示すようにウエッ
トエッチング法を用いて電極のパターニングを行い、さ
らに図１ｃに示すようにウエットエッチング法を用いて
機能性薄膜２のパターニングを行って図１ｄに示すよう
な圧力センサを作製していた。2. Description of the Related Art In a conventional pressure sensor using a thin film, a functional thin film 2 is formed on an insulating substrate 1 as shown in FIG. 1a, an electrode thin film 3 is formed, and this is wet-etched as shown in FIG. 1b. The electrode was patterned by using the method, and the functional thin film 2 was patterned by using the wet etching method as shown in FIG. 1c to manufacture the pressure sensor as shown in FIG. 1d.
【０００３】[0003]
【発明が解決しようとする課題】従来の方法では電極エ
ッチング後、機能性薄膜のパターニングを行うために、
機能性薄膜の表面が電極エッチング液にさらされること
になるため、機能性薄膜が溶解されないように選択エッ
チングが可能なエッチング液、及び薄膜材料を選択しな
ければならず、薄膜を用いた圧力センサの作製を困難に
していた。In the conventional method, in order to pattern the functional thin film after the electrode etching,
Since the surface of the functional thin film is exposed to the electrode etching liquid, it is necessary to select an etching liquid capable of selective etching and a thin film material so as not to dissolve the functional thin film, and a pressure sensor using the thin film. Was difficult to make.
【０００４】[0004]
【課題を解決するための手段】上記の課題を解決するた
め、ウエットエッチングで使用するエッチング液では溶
解しにくい白金を主成分とした厚膜ペーストを用い、こ
れを絶縁基板上に印刷、焼成し電極となした後、機能性
薄膜を着膜、ウエットエッチング法を用いてパターニン
グを行う事により、エッチング液に必要な部分の機能性
薄膜をさらす事なく圧力センサを作製する事が可能とな
った。In order to solve the above-mentioned problems, a thick film paste containing platinum as a main component, which is difficult to dissolve in an etching solution used in wet etching, is printed and baked on an insulating substrate. After forming the electrode, by depositing a functional thin film and patterning using the wet etching method, it became possible to fabricate a pressure sensor without exposing the portion of the functional thin film required by the etching solution. .
【０００５】[0005]
【作 用】本発明によれば、従来選択性のあるエッチ
ングを行わなければならなかった薄膜圧力センサの作製
が容易となった。[Operation] According to the present invention, it becomes easy to manufacture a thin film pressure sensor which has conventionally required selective etching.
【０００６】[0006]
【実施例１】以下、本発明の実施例の圧力センサについ
て図２ａ、ｂ、ｃを用いて説明する。Embodiment 1 Hereinafter, a pressure sensor according to an embodiment of the present invention will be described with reference to FIGS. 2a, 2b and 2c.
【０００７】図２ａは、本発明による圧力センサの断面
図であり、図２ｂは、本発明の圧力センサの電極パター
ン図であり、図２ｃは本発明による圧力センサのパター
ン図である。FIG. 2a is a sectional view of a pressure sensor according to the present invention, FIG. 2b is an electrode pattern diagram of the pressure sensor of the present invention, and FIG. 2c is a pattern diagram of the pressure sensor of the present invention.
【０００８】図２ａ、ｂ、ｃにおいて、本発明の圧力セ
ンサは、アルミナを絶縁性基板として用い、アルミナ基
板５上に白金ペーストを図２ｂに示すようなパターンに
印刷、８５０℃で焼成し、電極３となし、その上にスパ
ッタリングにより機能性薄膜２を着膜後、ウエットエッ
チング法を用い、図２ｃに示すようなパターンを形成し
図２ａに示す構成の圧力センサを作製した。2a, 2b and 2c, in the pressure sensor of the present invention, alumina is used as an insulating substrate, platinum paste is printed on the alumina substrate 5 in a pattern as shown in FIG. 2b, and baked at 850.degree. After forming the electrode 3 and depositing the functional thin film 2 thereon by sputtering, a pattern as shown in FIG. 2c was formed using a wet etching method to fabricate a pressure sensor having the structure shown in FIG. 2a.
【０００９】[0009]
【実施例２】図３は絶縁性基板にステンレス板６上にス
パッタリングにより酸化シリコン７により絶縁膜を形成
した基板を使用した圧力センサについても実施例１と同
様に作製を行った。Example 2 As shown in FIG. 3, a pressure sensor using an insulating substrate having a stainless steel plate 6 and an insulating film formed of silicon oxide 7 by sputtering was manufactured in the same manner as in Example 1.
【００１０】[0010]
【実施例３】図４は絶縁性基板にアルミナ５を使用し、
機能性薄膜にニッケル−クロム８を主成分とする合金を
用い、エッチング液に硝酸セリウムアンモニウム水溶液
を使用した圧力センサの断面図であり、実施例１と同様
に作製を行った。Example 3 In FIG. 4, alumina 5 is used for the insulating substrate,
9 is a cross-sectional view of a pressure sensor using an alloy containing nickel-chromium 8 as a main component for the functional thin film and an aqueous cerium ammonium nitrate solution as an etching solution, and was manufactured in the same manner as in Example 1. FIG.
【００１１】[0011]
【実施例４】図５は絶縁性基板にアルミナ５を使用し、
機能性薄膜に鉄−クロム９を主成分とする合金を用い、
エッチング液に硫酸銅、塩酸の混合液を使用した圧力セ
ンサの断面図であり、実施例１と同様に作製を行った。[Embodiment 4] FIG. 5 shows the case where alumina 5 is used for the insulating substrate.
An alloy containing iron-chromium 9 as a main component is used for the functional thin film,
FIG. 6 is a cross-sectional view of a pressure sensor using a mixed solution of copper sulfate and hydrochloric acid as an etching solution, and was manufactured in the same manner as in Example 1.
【発明の効果】以上の実施例で作製した圧力センサで
は、電極のエッチング工程が無いために機能性薄膜が損
なわれる事なく作製する事が可能となり、また選択エッ
チングの必要性が無くなることから薄膜圧力センサの作
製が容易になった。EFFECTS OF THE INVENTION In the pressure sensor manufactured in the above embodiment, since there is no electrode etching step, the functional thin film can be manufactured without being damaged, and the necessity of selective etching is eliminated. The pressure sensor is easier to manufacture.
【図１】従来の技術で作製した薄膜圧力センサの工程
図。 ａ基板上に作製した薄膜の断面図。 ｂ電極エッチング後の断面図。 ｃ機能性薄膜エッチング後の断面図。 ｄ完成後の薄膜圧力センサの上面図。FIG. 1 is a process diagram of a thin film pressure sensor manufactured by a conventional technique. Sectional drawing of the thin film produced on the a substrate. Sectional drawing after b electrode etching. c Sectional view after etching the functional thin film. d is a top view of the thin film pressure sensor after completion.
【図２】本発明により作製した薄膜圧力センサの工程
図。 ａ絶縁性基板上に電極を作製した上面図 ｂ機能性薄膜エッチング後の上面図。 ｃ完成後の薄膜圧力センサの断面図。FIG. 2 is a process drawing of a thin film pressure sensor manufactured according to the present invention. a: Top view of an electrode formed on an insulating substrate b: Top view after functional thin film etching. c Sectional view of the thin film pressure sensor after completion.
【図３】金属板を用いた薄膜圧力センサの断面図。FIG. 3 is a sectional view of a thin film pressure sensor using a metal plate.
【図４】ニッケル−クロムを機能性薄膜に用いた薄膜圧
力センサの断面図。FIG. 4 is a cross-sectional view of a thin film pressure sensor using nickel-chromium as a functional thin film.
【図５】鉄−クロムを機能性薄膜に用いた薄膜圧力セン
サの断面図。FIG. 5 is a cross-sectional view of a thin film pressure sensor using iron-chromium as a functional thin film.
１ 絶縁性基板 ２ 機能性薄膜 ３ 電極 ４ フォトレジスト ５ アルミナ基板 ６ ステンレス板 ７ 酸化シリコン ８ ニッケル−クロム ９ 鉄−クロム 1 Insulating Substrate 2 Functional Thin Film 3 Electrode 4 Photoresist 5 Alumina Substrate 6 Stainless Steel Plate 7 Silicon Oxide 8 Nickel-Chromium 9 Iron-Chromium
Claims (4)
膜電極パターンを形成し、その上に機能性薄膜を形成し
た構造を特徴とする薄膜圧力センサ。1. A thin film pressure sensor having a structure in which a thick film electrode pattern containing platinum as a main component is formed on the surface of an insulating substrate, and a functional thin film is formed thereon.
成し、絶縁基板とした請求項１に記載の圧力センサ。2. The pressure sensor according to claim 1, wherein the substrate is a metal, and an insulating film is formed on the surface of the substrate to form an insulating substrate.
ッケル−クロムである薄膜圧力センサ。3. A thin film pressure sensor in which the main component of the functional thin film according to claim 1 is nickel-chromium.
−クロムである薄膜圧力センサ。4. A thin film pressure sensor in which the main component of the functional thin film according to claim 1 is iron-chromium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1315894A JPH07209116A (en) | 1994-01-11 | 1994-01-11 | Pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1315894A JPH07209116A (en) | 1994-01-11 | 1994-01-11 | Pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07209116A true JPH07209116A (en) | 1995-08-11 |
Family
ID=11825372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1315894A Pending JPH07209116A (en) | 1994-01-11 | 1994-01-11 | Pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07209116A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002057731A1 (en) * | 2001-01-22 | 2002-07-25 | K-Tech Devices Corp. | Stress sensor |
-
1994
- 1994-01-11 JP JP1315894A patent/JPH07209116A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002057731A1 (en) * | 2001-01-22 | 2002-07-25 | K-Tech Devices Corp. | Stress sensor |
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