JPH0719156Y2 - Resin-sealed electronic parts - Google Patents
Resin-sealed electronic partsInfo
- Publication number
- JPH0719156Y2 JPH0719156Y2 JP1989011896U JP1189689U JPH0719156Y2 JP H0719156 Y2 JPH0719156 Y2 JP H0719156Y2 JP 1989011896 U JP1989011896 U JP 1989011896U JP 1189689 U JP1189689 U JP 1189689U JP H0719156 Y2 JPH0719156 Y2 JP H0719156Y2
- Authority
- JP
- Japan
- Prior art keywords
- chip
- resin
- resin layer
- top surface
- mesa structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Transmission And Conversion Of Sensor Element Output (AREA)
- Measuring Magnetic Variables (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【考案の詳細な説明】 ［考案の目的］ （産業上の利用分野） 本考案は、磁気センサを含む各種電子部品に適用される
樹脂封止型電子部品に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a resin-sealed electronic component applied to various electronic components including a magnetic sensor.
（従来の技術） 回転物体や移動物体の変位検出に好適な電子部品の一種
として磁気センサが知られている。この磁気センサは磁
気抵抗効果を発揮する強磁性薄膜を利用して感磁部を構
成し、この感磁部を前記回転物体や移動物体に接近させ
ることにより磁界の変化を検出して、回転や移動等の変
位を検出するものである。(Prior Art) A magnetic sensor is known as a kind of electronic component suitable for detecting displacement of a rotating object or a moving object. This magnetic sensor forms a magnetic sensitive section by using a ferromagnetic thin film that exhibits a magnetoresistive effect, and detects the change in the magnetic field by bringing the magnetic sensitive section closer to the rotating object or the moving object, and It detects displacement such as movement.
第10図及び第11図は磁気センサの一種として磁気センサ
チップ（以下単にチップと称する）１をメサ構造とした
例を示すもので、このチップ１は各種ガラス，セラミッ
クス等の絶縁材料から成りフォトエッチングによってメ
サ構造に形成された後、その頂上面2aから傾斜面2b及び
平坦面2cにかけて第11図のようにニッケル，ニッケル合
金等の強磁性薄膜から成る感磁部3a,3bが形成されてい
る。また感磁部3a,3bの端部には各々電極4a,4bが形成さ
れると共に、感磁部3a,3bの中間部には電極4cが形成さ
れている。チップ１はチップ支持部５に接着材を介して
固定されると共に、チップ支持部５に近接してリード部
6a,6b,6cが配置され、このリード部6a,6b,6cと前記電極
4a,4b,4cとの間はワイヤ7a,7b,7cがボンディングされ
る。リード部6a,6b間には電源８が接続されると共に、
リード部6cは感磁部3a,3bによる磁気抵抗効果に基く検
出信号を取出すために用いられる。そしてこれらチップ
１及びリード部6a,6b,6cを含む全体は樹脂９によって封
止されている。10 and 11 show an example in which a magnetic sensor chip (hereinafter simply referred to as a chip) 1 has a mesa structure as a kind of magnetic sensor. The chip 1 is made of an insulating material such as various kinds of glass and ceramics. After being formed into a mesa structure by etching, magnetic sensitive portions 3a and 3b made of a ferromagnetic thin film such as nickel or nickel alloy are formed from the top surface 2a to the inclined surface 2b and the flat surface 2c as shown in FIG. There is. Further, electrodes 4a and 4b are formed on the ends of the magnetic sensitive portions 3a and 3b, respectively, and an electrode 4c is formed on the middle portion of the magnetic sensitive portions 3a and 3b. The chip 1 is fixed to the chip supporting portion 5 with an adhesive, and is close to the chip supporting portion 5 and the lead portion.
6a, 6b, 6c are arranged, the lead portions 6a, 6b, 6c and the electrode
Wires 7a, 7b, 7c are bonded between 4a, 4b, 4c. A power source 8 is connected between the lead portions 6a and 6b, and
The lead portion 6c is used to extract a detection signal based on the magnetoresistive effect of the magnetically sensitive portions 3a and 3b. And the whole including the chip 1 and the lead portions 6a, 6b, 6c is sealed with a resin 9.
（考案が解決しようとする課題） ところで従来の磁気センサは、第10図のようにセンサ部
として作用するチップ１のメサ構造の頂上面2aが比較的
厚い樹脂９によって覆われているので、被検体に近接し
て変位検出を行う場合その厚みＴ以上は近接できないの
で検出精度をあまり向上できないという問題がある。例
えばその厚みＴは製造上の制約から0.3乃至0.5mm程度が
限界であり、これ以下に小さくすることは困難である。
一方、望ましい検出精度を得るためにはチップ１の頂上
面2aと被検体とのギャップを0.1mm程度まで減少させる
ことが必要である。(Problems to be solved by the invention) By the way, in the conventional magnetic sensor, the top surface 2a of the mesa structure of the chip 1 acting as a sensor portion is covered with a relatively thick resin 9 as shown in FIG. When the displacement is detected in the vicinity of the sample, there is a problem that the detection accuracy cannot be improved so much because the thickness T or more cannot be detected. For example, the thickness T is limited to about 0.3 to 0.5 mm due to manufacturing restrictions, and it is difficult to reduce the thickness T below this value.
On the other hand, in order to obtain the desired detection accuracy, it is necessary to reduce the gap between the top surface 2a of the chip 1 and the subject to about 0.1 mm.
このような制約を除くために、第12図のようにメサ構造
チップ１の頂上面2a付近のみを極薄樹脂層9Aで覆うよう
にした磁気センサも検討されたが、この構造であるとボ
ンディングワイヤ7a,7b,7cの表面の樹脂層も薄く形成さ
れてしまうので、ボンディングワイヤ7a,7b,7cが樹脂９
から露出するおそれがあり、断線等の原因となる。In order to eliminate such restrictions, a magnetic sensor in which only the vicinity of the top surface 2a of the mesa structure chip 1 is covered with the ultrathin resin layer 9A as shown in FIG. 12 was also studied. Since the resin layer on the surface of the wires 7a, 7b, 7c is also thinly formed, the bonding wires 7a, 7b, 7c are made of resin 9
There is a risk of exposure from the outside, which may cause disconnection.
本考案は以上のような事情に対処してなされたもので、
ボンディングワイヤを露出することなくチップの頂上面
を覆う樹脂を薄く形成することができる樹脂封止型電子
部品を提供することを目的とするものである。The present invention was made in response to the above circumstances,
It is an object of the present invention to provide a resin-sealed electronic component in which the resin covering the top surface of a chip can be thinly formed without exposing the bonding wire.
［考案の構成］ （課題を解決するための手段） 上記目的を達成するために本考案は、メサ構造の電子部
品チップと、このメサ構造の頂上面以外の位置にボンデ
ィングされたワイヤが接続されたリード部とを樹脂封止
した樹脂封止型電子部品において、電子部品チップのメ
サ構造の少なくとも頂上面が極薄樹脂層によって覆われ
ると共に、メサ構造の少なくとも底面に対向した部分が
これに連なる部分より薄い樹脂層によって覆われたこと
を特徴とするものである。[Structure of the Invention] (Means for Solving the Problems) In order to achieve the above object, the present invention is to connect an electronic component chip of a mesa structure and a wire bonded to a position other than the top surface of the mesa structure. In a resin-sealed electronic component in which the lead portion is resin-sealed, at least the top surface of the mesa structure of the electronic component chip is covered with the ultrathin resin layer, and at least the portion of the mesa structure facing the bottom surface is continuous with this. It is characterized by being covered with a resin layer thinner than the portion.
（作用） 本考案の樹脂封止型電子部品例えばメサ構造のチップを
有する磁気センサによれば、メサ構造チップの少なくと
も頂上面は例えば樹脂封止に先立って予め塗布した極薄
樹脂層のみによって覆われるので、頂上面と被検体との
ギャップを検出精度を向上できる程度まで減少すること
ができる。またメサ構造チップの底面付近は特に薄い樹
脂層によって覆われるので、チップに対して加えられる
熱応力を緩和することができるため、チップの変形を回
避することができる。(Function) According to the resin-sealed electronic component of the present invention, for example, a magnetic sensor having a mesa-structured chip, at least the top surface of the mesa-structured chip is covered with, for example, only an ultra-thin resin layer previously applied prior to resin-sealing. Therefore, the gap between the top surface and the object can be reduced to the extent that the detection accuracy can be improved. Further, since the vicinity of the bottom surface of the mesa structure chip is covered with a particularly thin resin layer, the thermal stress applied to the chip can be relieved, so that the deformation of the chip can be avoided.
（実施例） 以下図面を参照して本考案実施例を説明する。Embodiments Embodiments of the present invention will be described below with reference to the drawings.
第１図及び第２図は本考案の樹脂封止型電子部品を磁気
センサに実施した断面図を示すもので、１は磁気センサ
チップ（以下単にチップと称する）でメサ構造から成
り、各種ガラス，セラミックス等の絶縁材料から構成さ
れている。メサ構造のチップ１の頂上面2aから傾斜面2b
及び平坦面2cにかけて第11図に示すようにニッケル，ニ
ッケル合金等の強磁性薄膜から成る感磁部3a,3bが形成
されている。また感磁部3a,3bの端部及び中間部には各
々電極4a,4b,4cが形成されている。５はチップ１を接着
材を介して固定するチップ支持部、6a,6b,6cはリード
部、7a,7b,7cは各リード部6a,6b,6cとチップ１の各電極
4a,4b,4cとの間にボンディングされたワイヤである。９
はチップ１及びリード部6a,6b,6cを含む全体を封止した
樹脂である。1 and 2 are cross-sectional views of a resin-encapsulated electronic component of the present invention applied to a magnetic sensor. Reference numeral 1 denotes a magnetic sensor chip (hereinafter simply referred to as a chip) having a mesa structure and various glass. , Made of insulating material such as ceramics. From the top surface 2a of the chip 1 having the mesa structure to the inclined surface 2b
As shown in FIG. 11, magnetic sensing parts 3a, 3b made of a ferromagnetic thin film of nickel, nickel alloy or the like are formed over the flat surface 2c. Further, electrodes 4a, 4b, 4c are formed on the end portions and the intermediate portions of the magnetic sensitive portions 3a, 3b, respectively. Reference numeral 5 is a chip supporting portion for fixing the chip 1 via an adhesive, 6a, 6b, 6c are lead portions, 7a, 7b, 7c are lead portions 6a, 6b, 6c and electrodes of the chip 1
It is a wire bonded between 4a, 4b and 4c. 9
Is a resin that seals the whole including the chip 1 and the lead portions 6a, 6b, 6c.
チップ１の頂上面2aは特に極薄樹脂層20によって覆われ
ており、この極薄樹脂層20は例えば樹脂９の封止前に予
め塗布されたエポキシ樹脂等から成り厚さ数10μｍ程度
に形成することができる。またボンディングワイヤ7a,7
b,7cは樹脂９内に完全に埋め込まれていて、樹脂９の表
面には露出していない。The top surface 2a of the chip 1 is particularly covered with an ultra-thin resin layer 20, and the ultra-thin resin layer 20 is made of, for example, an epoxy resin or the like applied in advance before sealing the resin 9 and is formed to have a thickness of about 10 μm. can do. Also, the bonding wires 7a, 7
b and 7c are completely embedded in the resin 9 and are not exposed on the surface of the resin 9.
またチップ１の底面に対向した部分はこれに連なる他の
部分の樹脂層９よりも薄い樹脂層９′によって覆われて
おり、これによってこの部分には穴部18が形成される。
樹脂層９′の厚さはチップ１の頂上面2aに形成された極
薄樹脂層20の厚さに接近させることが望ましい。このよ
うな本実施例の構造によれば、メサ構造のチップ１の少
なくとも頂上面2aは極薄樹脂層20によって覆われてお
り、この樹脂層20の厚さは望ましい検出精度を得るため
の頂上面2aと被検体とのギャップの値以下に形成するこ
とができるので、検出精度を向上することができる。ま
たボンディングワイヤ7a,7b,7cは樹脂９から露出されて
いないので、断線が生ずることもなくなる。また、チッ
プ１の底面は前記極薄樹脂層20の厚さに接近した厚さの
樹脂層９′によって覆われているので、チップ１の両面
は樹脂層20,9′によって加えられる熱応力はバランスす
るため、熱応力によるチップ１の変形を避けることがで
きる。Further, the portion of the chip 1 facing the bottom surface is covered with a resin layer 9'thinner than the resin layer 9 of the other portions connected to the bottom portion, whereby a hole 18 is formed in this portion.
The thickness of the resin layer 9'is preferably close to the thickness of the ultrathin resin layer 20 formed on the top surface 2a of the chip 1. According to the structure of this embodiment, at least the top surface 2a of the mesa structure chip 1 is covered with the ultrathin resin layer 20, and the thickness of the resin layer 20 is the top surface for obtaining the desired detection accuracy. Since the gap can be formed to be equal to or smaller than the value of the gap between the surface 2a and the subject, the detection accuracy can be improved. Further, since the bonding wires 7a, 7b, 7c are not exposed from the resin 9, disconnection does not occur. Further, since the bottom surface of the chip 1 is covered with the resin layer 9'having a thickness close to the thickness of the ultra-thin resin layer 20, both surfaces of the chip 1 are not subjected to the thermal stress applied by the resin layers 20, 9 '. Because of the balance, deformation of the chip 1 due to thermal stress can be avoided.
また、穴部18を利用して第６図に示すようにバイアス磁
石19を固定するようにしてもよい。Further, the hole 18 may be used to fix the bias magnet 19 as shown in FIG.
次に第１図及び第２図の磁気センサの製造方法を説明す
る。先ず第９図に示したようなリードフレーム11を用
い、第３図（ａ）のようにこのリードフレーム11のチッ
プ支持部５にチップ１を接着材を介して固定する。次に
第３図（ｂ）のようにチップ１の各電極4a,4b,4cと各リ
ード6a,6b,6cとの間を導電性のワイヤ7a,7b,7cによって
ボンディングする。続いて第３図（ｃ）のようにチップ
１の表面に例えばエポキシ樹脂を塗布することにより数
10μｍ程度の極薄樹脂層20を形成する。この極薄樹脂層
20はチップ１の表面を保護するように作用する。Next, a method of manufacturing the magnetic sensor of FIGS. 1 and 2 will be described. First, the lead frame 11 as shown in FIG. 9 is used, and the chip 1 is fixed to the chip supporting portion 5 of the lead frame 11 with an adhesive as shown in FIG. 3 (a). Next, as shown in FIG. 3 (b), the electrodes 4a, 4b, 4c of the chip 1 and the leads 6a, 6b, 6c are bonded with conductive wires 7a, 7b, 7c. Subsequently, as shown in FIG. 3 (c), the surface of the chip 1 is coated with, for example, an epoxy resin, so that
An extremely thin resin layer 20 having a thickness of about 10 μm is formed. This ultra-thin resin layer
20 acts to protect the surface of the chip 1.
次に第４図のように高さH1,H2，（H1＞H2）の押圧面15
a,15bを備え樹脂導入用凹部12aを備えた封止用上金型1
2、及びこの上金型12に対向して高さh1,h2（h1＞h2）の
押圧面16a,16b及び高さh3（h2＞h3）の突起面16cを備え
樹脂導入用凹部13a,13bを備えた封止用下金型13を用
い、第３図（ｄ）のように両金型12,13間にリードフレ
ーム11を押圧面15aと16a,押圧面15bと16bで押圧するよ
うに挟み込む。なお凹部12aの深さｔはほぼチップ１の
厚みｔ′に等しく選んでおく。これによってリード部6
a,6b,6cのボンディングワイヤ7a,7b,7cが接続された位
置近傍はこれより外側方向に向っている他の位置よりも
押し下げられた状態となり、また同時にリード部と一体
化されているチップ支持部５も押し下げられるので凹部
12aの内壁面はチップ１の頂上面2aに極めて接近した位
置に保たれる。また、下金型13の突起面16cもチップ支
持部５の底面に極めて接近した位置に保たれる。なおこ
のときのＶ−Ｖ線に沿った断面構造は第５図に示すよう
になる。Next, as shown in Fig. 4, the pressing surface 15 with heights H 1 , H 2 and (H 1 > H 2 )
Upper mold 1 for sealing having a resin introduction recess 12a provided with a and 15b
2, and pressing surfaces 16a, 16b of heights h 1 and h 2 (h 1 > h 2 ) and a protruding surface 16c of height h 3 (h 2 > h 3 ) facing the upper die 12 Using the lower mold 13 for encapsulation having the resin introducing recesses 13a, 13b, the lead frames 11 are pressed between the molds 12, 13 as shown in FIG. 3 (d) by pressing surfaces 15a and 16a, pressing surface 15b. And 16b so as to press it. The depth t of the recess 12a is selected to be substantially equal to the thickness t'of the chip 1. This leads 6
Around the position where the a, 6b, 6c bonding wires 7a, 7b, 7c are connected is pushed down more than other positions facing outward, and at the same time, the chip integrated with the lead part. Since the supporting part 5 is also pushed down,
The inner wall surface of 12a is kept at a position extremely close to the top surface 2a of the chip 1. Further, the protruding surface 16c of the lower mold 13 is also kept at a position extremely close to the bottom surface of the chip supporting portion 5. The sectional structure taken along the line V-V at this time is as shown in FIG.
続いてその状態で第３図（ｅ）のように上金型12の樹脂
導入孔14から樹脂を導入することにより、チップ１及び
リード部6a,6b,6cを含む全体を封止する。この樹脂封止
は周知のトランスファーモールド法等を利用することに
よって容易に行うことができる。この樹脂封止の際チッ
プ１の頂上面2aと凹部12aの内壁面の隙間は微小間隔に
保たれているので、樹脂はこの表面張力によってほとん
ど流れ込まないか、流れ込んだとしてもほんのわずかな
量なのでその頂上面2aはほぼ極薄樹脂層20によって覆っ
た状態に保つことができる。また下金型13の突起面16c
とチップ支持部５との隙間は前記極薄樹脂層20の厚さに
接近した値となっているので、チップ１の底面に対向し
た部分は他の部分の樹脂層９よりも薄い樹脂層９′によ
って覆われる。これによって穴部18が形成される。次に
樹脂封止用上金型12及び下金型13を取外した後、リード
フレーム11の不要部を切断することにより第１図及び第
２図の磁気センサが完成する。Then, in that state, resin is introduced from the resin introduction hole 14 of the upper die 12 as shown in FIG. 3 (e) to seal the whole including the chip 1 and the lead portions 6a, 6b, 6c. This resin encapsulation can be easily performed by utilizing a well-known transfer molding method or the like. At the time of this resin sealing, the gap between the top surface 2a of the chip 1 and the inner wall surface of the recess 12a is kept at a minute interval, so the resin hardly flows in due to this surface tension, or even if it flows in, it is a very small amount. The top surface 2a can be kept almost covered with the ultrathin resin layer 20. Also, the protruding surface 16c of the lower mold 13
Since the gap between the chip supporting portion 5 and the chip supporting portion 5 is close to the thickness of the ultrathin resin layer 20, the portion facing the bottom surface of the chip 1 is thinner than the resin layer 9 in other portions. Covered by ′. As a result, the hole 18 is formed. Next, after removing the resin-molding upper die 12 and the lower die 13, the unnecessary portions of the lead frame 11 are cut to complete the magnetic sensors of FIGS. 1 and 2.
第７図及び第８図は本考案の他の実施例としてメサ構造
の半導体チップ21を有するフォトセンサに適用した断面
図を示すもので、PN接合22を含む受光部の表面を極薄樹
脂層20によって覆ったものである。24はＰ形領域表面か
ら引き出された導電パターン、25a,25bは各々カソード
電極及びアノード電極、26a,26bは各々カソードリード
部及びアノードリード部、27a,27bは各電極25a,25bと各
リード部26a,26b間を接続するボンディングワイヤ、９
は樹脂である。7 and 8 are cross-sectional views showing another embodiment of the present invention applied to a photosensor having a semiconductor chip 21 having a mesa structure, in which the surface of the light receiving portion including the PN junction 22 is made of an ultrathin resin layer. It is covered by 20. 24 is a conductive pattern drawn from the surface of the P-type region, 25a and 25b are cathode electrodes and anode electrodes, 26a and 26b are cathode lead portions and anode lead portions, and 27a and 27b are electrodes 25a and 25b and lead portions. Bonding wire for connecting 26a and 26b, 9
Is a resin.
本実施例によればPN接合22を含む受光部となるメサ構造
チップ21の少なくとも頂上面21aが極薄樹脂層20によっ
て覆われているので、不要に減衰させることなく外部か
らの光を検出することができるため光検出効率を向上す
ることができる。またチップ21の底面が薄い樹脂層９′
によって覆われているので、チップが樹脂の熱応力によ
って変形することも防止される。According to the present embodiment, at least the top surface 21a of the mesa structure chip 21 serving as the light receiving portion including the PN junction 22 is covered with the ultrathin resin layer 20, so that the light from the outside can be detected without unnecessary attenuation. Therefore, the light detection efficiency can be improved. Moreover, the bottom surface of the chip 21 has a thin resin layer 9 '.
Also, the chip is prevented from being deformed by the thermal stress of the resin.
更に以上示した各実施例に限らず、メサ構造チップを有
し少なくともこの頂上面を極薄樹脂層によってのみ覆う
必要がある樹脂封止型電子部品であればいかなる電子部
品にも適用することができる。なお上金型12及び下金型
13は１個のチップを樹脂封止する例で示したが、実際に
は同時に多数個のチップを封止できる構造になってい
る。Further, the present invention is not limited to the above-described respective embodiments, and can be applied to any electronic component as long as it is a resin-sealed electronic component that has a mesa structure chip and needs to cover at least the top surface only with an extremely thin resin layer. it can. Upper mold 12 and lower mold
Although 13 has been shown as an example in which one chip is sealed with resin, in practice it has a structure capable of simultaneously sealing many chips.
［考案の効果］ 以上述べたように本考案の樹脂封止型電子部品によれ
ば、メサ構造チップの少なくとも頂上面をボンディング
ワイヤを樹脂から露出することなく極薄樹脂層で覆うと
共にチップの底面を極薄樹脂層の厚さに接近した値の薄
い樹脂層で覆うようにしたので、チップに対し熱応力を
加えることなく検出精度を向上することができる。[Effects of the Invention] As described above, according to the resin-sealed electronic component of the present invention, at least the top surface of the mesa structure chip is covered with the ultrathin resin layer without exposing the bonding wire from the resin, and the bottom surface of the chip is covered. Since it is covered with a thin resin layer having a value close to the thickness of the ultrathin resin layer, the detection accuracy can be improved without applying thermal stress to the chip.
第１図及び第２図は本考案の樹脂封止型電子部品を磁気
センサに実施した例を示す断面図、第３図（ａ）乃至
（ｅ）は本実施例磁気センサの製造方法を示す工程図、
第４図は本製造方法に用いられる金型の形状を示す断面
図、第５図は第３図（ｄ）に対応した断面図、第６図は
本考案の他の実施例を示す断面図、第７図及び第８図は
本考案のその他の実施例を示す断面図及び上面図、第９
図は磁気センサの製造に用いられるリードフレームの斜
視図、第10図及び第11図は従来の磁気センサを示す断面
図及び上面図、第12図は他の従来例の磁気センサを示す
断面図、第13図は磁気センサの適用例を示す斜視図であ
る。 １……メサ構造の磁気センサチップ、2a……メサ構造チ
ップの頂上面、3a,3b……感磁部、4a,4b,4c……電極、
５……チップ支持部、6a,6b,6c……リード部、7a,7b,7c
……ボンディングワイヤ、９……樹脂、９′……薄い樹
脂層、11……リードフレーム、12……上金型、13……下
金型、15a,15b……上金型の押圧面、16c……下金型の突
起面、18……穴部、19……バイアス磁石、20……極薄樹
脂層、21……半導体チップ。1 and 2 are sectional views showing an example in which the resin-sealed type electronic component of the present invention is applied to a magnetic sensor, and FIGS. 3 (a) to 3 (e) show a method for manufacturing the magnetic sensor of the present embodiment. Process chart,
FIG. 4 is a sectional view showing the shape of a mold used in this manufacturing method, FIG. 5 is a sectional view corresponding to FIG. 3 (d), and FIG. 6 is a sectional view showing another embodiment of the present invention. , FIG. 7 and FIG. 8 are sectional and top views showing another embodiment of the present invention, and FIG.
The figure is a perspective view of a lead frame used for manufacturing a magnetic sensor, FIGS. 10 and 11 are sectional views and a top view showing a conventional magnetic sensor, and FIG. 12 is a sectional view showing another conventional magnetic sensor. FIG. 13 is a perspective view showing an application example of the magnetic sensor. 1 ... Mesa structure magnetic sensor chip, 2a ... Mesa structure chip top surface, 3a, 3b ... Magnetically sensitive part, 4a, 4b, 4c ... Electrode,
5 ... Chip support, 6a, 6b, 6c ... Lead, 7a, 7b, 7c
...... Bonding wire, 9 ... resin, 9 '... thin resin layer, 11 ... lead frame, 12 ... upper die, 13 ... lower die, 15a, 15b ... upper die pressing surface, 16c …… Projection surface of lower mold, 18 …… Hole, 19 …… Bias magnet, 20 …… Ultra-thin resin layer, 21 …… Semiconductor chip.
Claims (1)
造の頂上面以外の位置にボンディングされたワイヤが接
続されたリード部とを樹脂封止した樹脂封止型電子部品
において、電子部品チップのメサ構造の少なくとも頂上
面が極薄樹脂層によって覆われると共に、メサ構造の少
なくとも底面に対向した部分がこれに連なる他の部分よ
り薄い樹脂層によって覆われたことを特徴とする樹脂封
止型電子部品。1. A resin-sealed electronic component in which a mesa-structured electronic component chip and a lead portion to which a wire bonded to a position other than the top surface of the mesa structure are connected are resin-sealed. At least the top surface of the mesa structure is covered with an ultra-thin resin layer, and at least the portion of the mesa structure facing the bottom surface is covered with a resin layer thinner than the other portions connected to it. Electronic components.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989011896U JPH0719156Y2 (en) | 1989-02-03 | 1989-02-03 | Resin-sealed electronic parts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989011896U JPH0719156Y2 (en) | 1989-02-03 | 1989-02-03 | Resin-sealed electronic parts |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02103284U JPH02103284U (en) | 1990-08-16 |
| JPH0719156Y2 true JPH0719156Y2 (en) | 1995-05-01 |
Family
ID=31220853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989011896U Expired - Lifetime JPH0719156Y2 (en) | 1989-02-03 | 1989-02-03 | Resin-sealed electronic parts |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0719156Y2 (en) |
-
1989
- 1989-02-03 JP JP1989011896U patent/JPH0719156Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02103284U (en) | 1990-08-16 |
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