JPH07176870A - Structure of insulating layer - Google Patents

Structure of insulating layer

Info

Publication number
JPH07176870A
JPH07176870A JP231793A JP231793A JPH07176870A JP H07176870 A JPH07176870 A JP H07176870A JP 231793 A JP231793 A JP 231793A JP 231793 A JP231793 A JP 231793A JP H07176870 A JPH07176870 A JP H07176870A
Authority
JP
Japan
Prior art keywords
polyimide film
insulating layer
filler
layer
photosensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP231793A
Other languages
Japanese (ja)
Other versions
JPH0831696B2 (en
Inventor
Hikari Kimura
光 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP231793A priority Critical patent/JPH0831696B2/en
Publication of JPH07176870A publication Critical patent/JPH07176870A/en
Publication of JPH0831696B2 publication Critical patent/JPH0831696B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

PURPOSE:To provide a structure of an insulating layer which is excellent in insulating property, testing property, checking property, and crack resistance property, and is formed by a simple manufacturing process. CONSTITUTION:An ordinary polyimide film as a first layer and a filler polyimide film 4 containing SiO2 as a second layer are stacked and formed on the surfaces of a substrate 1 and a lower layer wiring pattern 2. As the polyimide film 3 and the filler polyimide film 4, a photosensitive polyimide film and a photosensitive filler polyimide film are used, respectively.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はコンピュータ等の電子機
器に使用される大規模集積回路(LSI)実装用多層配
線基板の層間絶縁層の構造に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of an interlayer insulating layer of a large-scale integrated circuit (LSI) mounting multilayer wiring board used in electronic equipment such as computers.

【0002】[0002]

【従来の技術】従来、この種の多層配線基板の層間絶縁
層には、図2又は図3に示されるように、通常のポリイ
ミド膜のみ又はフィラーポリイミド膜のみから成る有機
絶縁層が使用されており、電気的絶縁性および表面凹凸
の平坦化のために2層以上繰返し形成されていた。
2. Description of the Related Art Conventionally, as shown in FIG. 2 or 3, an organic insulating layer made of a normal polyimide film or a filler polyimide film is used as an interlayer insulating layer of a multilayer wiring board of this type. However, two or more layers were repeatedly formed for electrical insulation and flattening of surface irregularities.

【0003】図2を参照すると、基板1と下層配線パタ
ーン2の表面に通常のポリイミド膜3が2層形成されて
いる。このポリイミド膜3の厚さは1層当り5〜10μ
である。この場合、2層形成すると、膜厚は10〜20
μとなるが、透明度が大きいため、表面からポリイミド
膜3を通して下層配線パターンが透過して見え、検査、
チェックが容易である。
Referring to FIG. 2, two ordinary polyimide films 3 are formed on the surfaces of the substrate 1 and the lower wiring pattern 2. The thickness of this polyimide film 3 is 5 to 10 μ per layer.
Is. In this case, when two layers are formed, the film thickness is 10 to 20.
However, since the transparency is large, the lower layer wiring pattern can be seen through the polyimide film 3 from the surface,
Easy to check.

【0004】図3を参照すると、基板1と下層配線パタ
ーン2の表面にSiO2 などが含まれる耐クラック性に
すぐれているフィラーポリイミド膜4が2層形成されて
いる。フィラーポリイミド膜4は機械的強度が強いた
め、クラック不良が激減する。
Referring to FIG. 3, two layers of filler polyimide film 4 containing SiO 2 and the like and having excellent crack resistance are formed on the surfaces of the substrate 1 and the lower wiring pattern 2. Since the filler polyimide film 4 has high mechanical strength, crack defects are drastically reduced.

【0005】図5(a)〜(e)を参照すると、図2の
絶縁層の構造の従来の製造方法が示されている。先ず、
基板1上に下層配線パターン2が形成される(図5
(a))。この表面に、通常のポリイミド膜3を2層、
スピンコート等により全面塗布し、乾燥、キュアさせる
(図5(b))。次に、キュアしたポリイミド膜3表面
にフォトレジスト5を塗布し、図示しないガラスマスク
を通して紫外線露光し、フォトレジスト5をパターン化
する(図5(c))。次に、ヒドラジンヒドラート系溶
剤によるウェットエッチングかあるいはCF4 ガス等に
よるドライエッチングにより、フォトレジスト5をマス
クにしてポリイミド膜3をエッチングする(図5
(d))。最後に、フォトレジスト5を剥離する(図5
(e))。
Referring to FIGS. 5 (a)-(e), there is shown a conventional method of manufacturing the structure of the insulating layer of FIG. First,
The lower layer wiring pattern 2 is formed on the substrate 1 (see FIG. 5).
(A)). On this surface, two layers of normal polyimide film 3,
The entire surface is applied by spin coating or the like, dried and cured (FIG. 5B). Next, a photoresist 5 is applied to the surface of the cured polyimide film 3 and exposed to ultraviolet light through a glass mask (not shown) to pattern the photoresist 5 (FIG. 5C). Next, the polyimide film 3 is etched using the photoresist 5 as a mask by wet etching with a hydrazine hydrate solvent or dry etching with CF 4 gas or the like (FIG. 5).
(D)). Finally, the photoresist 5 is peeled off (see FIG. 5).
(E)).

【0006】又、図5(a)〜(e)中のポリイミド膜
3の代わりにフィラーポリイミド膜4を使用することに
より、図3の絶縁層の構造が製造できる。
Further, by using the filler polyimide film 4 instead of the polyimide film 3 in FIGS. 5A to 5E, the structure of the insulating layer of FIG. 3 can be manufactured.

【0007】[0007]

【発明が解決しようとする課題】しかしながら、図2の
ように、通常のポリイミド膜3のみで2層以上形成した
ものでは、熱ストレスや吸湿のために内部にクラックが
生じやすく、図3のようにSiO2 などが含まれたフィ
ラーポリイミド膜4のみで2層以上形成すると、フィラ
ーSiO2 のために膜の透明度が著しく悪くなり、表面
からフィラーポリイミド膜4を通して下層配線パターン
2が見えなくなってしまい、検査、チェックが不可能と
なる欠点がある。又、図5(a)〜(e)に示したよう
な、従来の製造方法では、製造工程が複雑となる欠点が
ある。
However, as shown in FIG. 2, in the case where two or more layers of ordinary polyimide film 3 are formed, cracks are likely to occur inside due to heat stress and moisture absorption. If two or more layers are formed only by the filler polyimide film 4 containing SiO 2 and the like, the transparency of the film is significantly deteriorated due to the filler SiO 2 , and the lower wiring pattern 2 cannot be seen from the surface through the filler polyimide film 4. However, there is a drawback that inspection and checking become impossible. Further, the conventional manufacturing method as shown in FIGS. 5A to 5E has a drawback that the manufacturing process is complicated.

【0008】また、ポリイミドとガラス系の2層からな
る絶縁層の構造も知られている(例えば、特開昭55−
105399号公報参照)。しかしながら、このような
ガラス系(無機材料)とポリイミド(有機材料)とを併
用した構造では、2つの材料間の物理的特性の違いに起
因する歪あるいは層間剥離が生じやすいなど、多層基板
の品質、信頼性に劣るという欠点がある。
A structure of an insulating layer composed of two layers of polyimide and glass is also known (for example, Japanese Patent Laid-Open No. 55-55-55).
105399 gazette). However, in such a structure in which glass (inorganic material) and polyimide (organic material) are used in combination, distortion or delamination easily occurs due to the difference in physical properties between the two materials, and the quality of the multilayer substrate However, it has the drawback of being less reliable.

【0009】したがって、本発明の目的は、絶縁性、検
査、チェック性および耐クラック性に優れた、絶縁層の
構造を提供することにある。
Accordingly, it is an object of the present invention to provide a structure of an insulating layer which is excellent in insulating property, inspection property, check property and crack resistance.

【0010】本発明の他の目的は、製造工程が簡単な、
絶縁層の構造を提供することにある。
Another object of the present invention is to simplify the manufacturing process,
It is to provide a structure of an insulating layer.

【0011】本発明のさらに他の目的は、層間の物理的
特性の相違が緩和され、歪、層間剥離等が生じにくい、
絶縁層の構造を提供することにある。
Still another object of the present invention is to alleviate the difference in physical properties between layers and prevent strain, delamination and the like from occurring.
It is to provide a structure of an insulating layer.

【0012】[0012]

【課題を解決するための手段】本発明による絶縁層の構
造は、多層配線基板の層間絶縁層が、ポリイミド膜とフ
ィラーポリイミド膜との組合せ構造を有し、上記ポリイ
ミド膜および上記フィラーポリイミド膜が、それぞれ、
感光性ポリイミド膜および感光性フィラーポリイミド膜
であることを特徴とする。
The structure of the insulating layer according to the present invention is such that the interlayer insulating layer of the multilayer wiring board has a combined structure of a polyimide film and a filler polyimide film, and the polyimide film and the filler polyimide film are ,Respectively,
It is characterized by being a photosensitive polyimide film and a photosensitive filler polyimide film.

【0013】[0013]

【実施例】以下、本発明の実施例について図面を参照し
て説明する。
Embodiments of the present invention will be described below with reference to the drawings.

【0014】図1を参照すると、基板1と下層配線パタ
ーン2の表面に、第1層目として通常のポリイミド膜3
が、そして第2層目にSiO2 を含むフィラーポリイミ
ド膜4が重ねて形成されている。このような構造による
と、絶縁性、検査、チェックおよび耐クラック性にすぐ
れた層間絶縁層が形成可能となる。
Referring to FIG. 1, a normal polyimide film 3 is formed as a first layer on the surfaces of the substrate 1 and the lower wiring pattern 2.
And a filler polyimide film 4 containing SiO 2 is formed on the second layer in an overlapping manner. With such a structure, it is possible to form an interlayer insulating layer having excellent insulating properties, inspection, checking, and crack resistance.

【0015】なお、上記実施例では、第1層目に通常の
ポリイミド膜3を、第2層目にフィラーポリイミド膜4
を形成しているが、第1層目にフィラーポリイミド膜4
を、第2層目に通常のポリイミド膜3を形成しても良
い。但し、この方が上記実施例に比べ耐クラック性が若
干悪くなる。
In the above embodiment, the normal polyimide film 3 is used as the first layer and the filler polyimide film 4 is used as the second layer.
, But the filler polyimide film 4 is formed on the first layer.
Alternatively, a normal polyimide film 3 may be formed on the second layer. However, in this case, the crack resistance is slightly worse than that in the above-mentioned examples.

【0016】図4(a)〜(e)を参照すると、図1の
絶縁層の構造の一製造方法が示されている。先ず、図5
(a)と同様に、基板1上に下層配線パターン2が形成
される(図4(a))。この表面全面に、感光性ポリイ
ミド膜3´及び感光性フィラーポリイミド膜4´をコー
ティング、低温乾燥する(図4(b))。従って、この
状態では、感光性ポリイミド膜3´及び感光性フィラー
ポリイミド膜4´はイミド化していない。次に、ガラス
マスク10を通して紫外線露光する(図4(c))。次
に、現像すると、紫外線が照射されなかった部分が除去
される(図4(d))。最後に、上記乾燥状態のイミド
化されていないポリイミド膜3及びフィラーポリイミド
膜4をキュアしてイミド化させる(図4(e))。
Referring to FIGS. 4A-4E, there is shown one method of manufacturing the structure of the insulating layer of FIG. First, FIG.
Similar to (a), the lower layer wiring pattern 2 is formed on the substrate 1 (FIG. 4 (a)). A photosensitive polyimide film 3'and a photosensitive filler polyimide film 4'are coated on the entire surface and dried at low temperature (FIG. 4 (b)). Therefore, in this state, the photosensitive polyimide film 3'and the photosensitive filler polyimide film 4'are not imidized. Next, UV exposure is performed through the glass mask 10 (FIG. 4C). Next, when development is performed, the portion not irradiated with ultraviolet rays is removed (FIG. 4 (d)). Finally, the dry non-imidized polyimide film 3 and the filler polyimide film 4 are cured and imidized (FIG. 4E).

【0017】このように、本実施例の製造方法(図4
(a)〜(e))は、従来の製造方法(図5(a)〜
(e))に比較して、製造工程が簡単となる。
Thus, the manufacturing method of this embodiment (see FIG.
(A) to (e) are conventional manufacturing methods (FIGS. 5A to 5E).
The manufacturing process is simpler than that of (e).

【0018】[0018]

【発明の効果】以上の説明で明らかなように、本発明に
よれば、多層配線基板の層間絶縁層の構造を、通常のポ
リイミド膜とフィラーポリイミド膜との組合せ構造とす
ることにより、絶縁性、検査、チェック性および耐クラ
ック性に優れた層間絶縁層を形成できる。また、ポリイ
ミド膜およびフィラーポリイミド膜として、それぞれ、
感光性ポリイミド膜および感光性フィラーポリイミド膜
を使用することにより、製造工程が簡単となるという利
点もある。さらに、層間絶縁層に通常のポリイミド膜と
フィラーポリイミド膜とから成る同じポリイミド系樹脂
を使用しているので、層間の物理的特性の相違が緩和さ
れ、歪、層間剥離等が生じにくいという利点もある。
As is apparent from the above description, according to the present invention, the structure of the interlayer insulating layer of the multilayer wiring board is a combination structure of a normal polyimide film and a filler polyimide film, so that the insulating property is improved. It is possible to form an interlayer insulating layer having excellent inspection, checkability and crack resistance. Also, as the polyimide film and the filler polyimide film, respectively,
The use of the photosensitive polyimide film and the photosensitive filler polyimide film also has an advantage of simplifying the manufacturing process. Furthermore, since the same polyimide-based resin composed of a normal polyimide film and a filler polyimide film is used for the interlayer insulating layer, the difference in physical characteristics between layers is alleviated, and the advantage that strain, delamination, etc. are less likely to occur is there.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例による絶縁層の構造を示した
断面図である。
FIG. 1 is a cross-sectional view showing a structure of an insulating layer according to an embodiment of the present invention.

【図2】従来の絶縁層の構造の一例を示した断面図であ
る。
FIG. 2 is a cross-sectional view showing an example of a structure of a conventional insulating layer.

【図3】従来の絶縁層の構造の他の一例を示した断面図
である。
FIG. 3 is a cross-sectional view showing another example of a structure of a conventional insulating layer.

【図4】図1の絶縁層の構造の製造方法を示した断面図
である。
FIG. 4 is a cross-sectional view showing a method of manufacturing the structure of the insulating layer of FIG.

【図5】図2の絶縁層の構造の従来の製造方法を示した
断面図である。
5 is a cross-sectional view showing a conventional method of manufacturing the structure of the insulating layer of FIG.

【符号の説明】[Explanation of symbols]

1 基板 2 配線パターン 3 通常のポリイミド膜 4 フィラーポリイミド膜 1 substrate 2 wiring pattern 3 ordinary polyimide film 4 filler polyimide film

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 多層配線基板の層間絶縁層が、ポリイミ
ド膜とフィラーポリイミド膜との組合せ構造を有し、上
記ポリイミド膜および上記フィラーポリイミド膜が、そ
れぞれ、感光性ポリイミド膜および感光性フィラーポリ
イミド膜であることを特徴とする絶縁層の構造。
1. An interlayer insulating layer of a multilayer wiring board has a combined structure of a polyimide film and a filler polyimide film, wherein the polyimide film and the filler polyimide film are a photosensitive polyimide film and a photosensitive filler polyimide film, respectively. The structure of the insulating layer is characterized by:
JP231793A 1993-01-11 1993-01-11 Structure of insulating layer Expired - Lifetime JPH0831696B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP231793A JPH0831696B2 (en) 1993-01-11 1993-01-11 Structure of insulating layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP231793A JPH0831696B2 (en) 1993-01-11 1993-01-11 Structure of insulating layer

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP8921986A Division JPS62247597A (en) 1986-04-19 1986-04-19 Structure of insulating layer

Publications (2)

Publication Number Publication Date
JPH07176870A true JPH07176870A (en) 1995-07-14
JPH0831696B2 JPH0831696B2 (en) 1996-03-27

Family

ID=11525957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP231793A Expired - Lifetime JPH0831696B2 (en) 1993-01-11 1993-01-11 Structure of insulating layer

Country Status (1)

Country Link
JP (1) JPH0831696B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10172235B1 (en) 2017-06-26 2019-01-01 Kyocera Corporation Wiring board and method for manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10172235B1 (en) 2017-06-26 2019-01-01 Kyocera Corporation Wiring board and method for manufacturing the same

Also Published As

Publication number Publication date
JPH0831696B2 (en) 1996-03-27

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Effective date: 19960917