JPH07176507A - Wet treatment device and method thereof - Google Patents

Abstract

PURPOSE:To manufacture a wet treatment device of high efficiency without increasing cost and treatment time. CONSTITUTION:The treatment requiring short treating time is conducted by a horizontal conveying sheet-fed treatment part and the treatment requiring a long treatment time is conducted by the sheet-fed dipping treatment part 6 characteristically provided with a substrate direction changing part 2, with which substrate direction is changed in vertical and horizontal directions and also having rotating function, a single-sheet conveying system 4 and a single- sheet dipping vessel 5, and the above-mentioned two kinds of treatments are combindly used. As a result, a substrate can be treated at a short time interval, and as a result, a large treatment capability can be obtained by a low cost device.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for wet processing such as cleaning, etching, resist stripping, etc., which is used for manufacturing a multi-layer thin film processed product such as a liquid crystal display.

[0002]

2. Description of the Related Art The basic structure often used in conventional wet processing apparatuses used for manufacturing liquid crystal displays and the like is horizontal transfer type single-wafer processing, and the outline of such apparatus is described in, for example, "Liquid Crystal Display Manufacturing Technology Handbook" 331. Pp. 339 (Science Forum, published in 1992) and "Liquid Crystal Display Manufacturing Equipment Practical Handbook" 127th
To 134 or 184 to 193 (Science Forum, published in 1993) and the like, the details thereof are described, and they can be obtained as commercial products by those skilled in the art.

A characteristic of substrate processing of a conventional wet processing apparatus is that a large substrate typified by a glass substrate is housed in a cassette and set in a loader, the substrates are taken out one by one from a cassette, a conveyor or a conveyance roller, etc. The substrate is transported horizontally to the wet treatment tank by a spraying process or immersion treatment while the substrate is kept horizontal in the wet treatment tank, and then the substrate is horizontally rinsed, rinsed and dried. It was carried out while being transported, and finally stored in the cassette installed in the unloader.

In such an apparatus, a substrate is kept stationary in a wet processing tank, a rinse tank, or a cleaning tank, or is oscillated by repeating forward and backward movements, or forwarded at a constant speed, so that several transfer modes are appropriately selected. However, it has been common to perform the wet treatment by optimizing the combination of these conveying modes and the spray treatment or the dipping treatment, and optimizing the number of treatment tanks.

Therefore, such a device should be called a horizontal transfer type single-wafer processing device because the substrates are commonly transferred horizontally and processed in a single wafer.

[0006]

In the conventional horizontal transfer type single-wafer wet processing apparatus, the process time required for wet processing such as cleaning, etching, resist stripping, and anodic oxidation is rinsing before and after wet processing, washing with water, and drying. No serious problem occurs when the processing time such as loading and unloading is balanced to the same extent, but a very serious problem occurs when the process processing time is significantly longer than the preceding and following processing times.

Specifically, in the case where the processing time is remarkably longer than the processing time before and after, the horizontal transfer type single-wafer wet processing apparatus must be used in the following two methods. First, the first method is a method in which the substrate is taken out with a constant tact and is conveyed at a constant speed, and the number of wet processing tanks is increased to a number that satisfies the process processing time to secure the processing time. In this case, when the processing tact of the substrate is t ₁ and the residence time of the substrate in the apparatus is t ₂ , the processing time T per lot can be represented by the following equation, with n substrates as one lot.

[0008]

[Equation 1] T = nt ₁ + t ₂ (Equation ₁ ) In this first case, the processing time T per lot is t _{2 which} is about the same as the processing time before and after the processing time. It increases only with the increase, but n is 10 to 5
Considering that it is common to process about 0 lots, it is not significantly large.

However, the processing apparatus becomes remarkably large due to the increase in the number of wet processing tanks, and it is difficult to significantly increase the processing apparatus price and the installation area of the apparatus.

Next, in the second method, the processing time is secured by allowing the substrate to stand still in the processing tank or swinging the substrate in the forward and backward directions. In this case, it is not necessary to increase the number of wet processing baths, and therefore the device does not become large.

However, since the next substrate cannot be processed while the substrate remains in the processing tank, the tact becomes remarkably large, and as a result, the processing time per lot is remarkably increased. is there.

In the manufacture of liquid crystal displays and the like, improvement in productivity is an essential issue for providing inexpensive products, and any increase in device price or increase in processing time which is a problem in the above method is acceptable. However, there is a need for a highly efficient wet processing apparatus that does not have such a problem.

[0013]

In order to solve the above problems, the feature of the wet processing apparatus of the present invention is that the wet processing requires a long time by providing an immersion processing tank for ensuring the process processing time necessary for the wet processing. Is a single wafer dipping treatment,
Before and after the wet treatment, the rinsing, water washing, drying, loading, unloading, etc., is a horizontal transfer type single wafer treatment.

The present invention will be described in detail with reference to FIG. 1 and FIGS. 2 and 3 showing the operation of the single-wafer dipping processing unit. In FIG. 1 showing an example of the present invention, a wet processing apparatus of the present invention comprises a loader unit 1, substrate direction changing units 2 and 3, a single-wafer conveying system 4, and a single-wafer dipping tank 5. Processing unit 6
A rinse unit 7, a water washing unit 8, an ultrasonic water washing unit 9, a drying unit 10, and an unloader unit 11.

A cassette 12 containing a plurality of substrates is set in the loader unit 1. The loader takes out the substrate 13 from the cassette 12 at a constant time interval (tact t ₁ ) and the roller 1
The operation of feeding horizontally into the wet processing apparatus according to 4 is repeated. The substrate direction conversion unit 2 receives the substrate sent by horizontal conveyance and stops it (FIG. 2- (a)), then changes the direction of the substrate from horizontal to vertical, and holds the substrate vertically as described later. The substrate is rotated 180 degrees as it is and held until it is transferred to the transfer robot 15 of the single-wafer transfer system (see FIG. 2).
-(B)) When the transfer is completed, the operation of receiving the substrate sent in the next horizontal transfer is repeated at tact t ₁ .
In the dipping processing unit 6 characterized by including the single-wafer transfer system 4, the transfer robot 15 receives the substrate held vertically by the substrate direction changing unit 2 and transfers the substrate to a predetermined position while holding it vertically. , One of a plurality of predetermined positions 16 in the immersion tank 5 (FIG. 2- (c)). By repeating the above operation, the substrate is immersed until the substrate installation position 16 in the immersion tank 5 is filled (FIG. 2- (d)). After this, the first dipped substrate is taken out (FIG. 2- (e)) and transferred to the substrate direction changing section 3 (FIG. 2- (f)). The board direction conversion unit 3 converts the board direction from vertical to horizontal (see FIG.
(G)), it is sent to the horizontal conveyance single-wafer processing section in the next step.

Next, the substrate sent next by the same operation as described above is set at the vacant substrate setting position 16 in the dipping tank 5 (FIG. 2- (h)), and the substrate to be taken out next is dipped. Taken out from the tank 5 (Fig. 2- (i)), and the substrate direction changing section 3
And hand it over (Fig. 2- (j)). The substrate direction conversion unit 3 converts the direction of the substrate from vertical to horizontal (FIG. 2- (k)) and sends it to the horizontal transport single wafer processing unit of the next process. Transport robot 1
5 waits to receive the next substrate (Fig. 2-
(L)).

By repeating the above operation at tact t ₁ , it is possible to realize the front and rear horizontal transfer single-wafer processing and single-wafer dipping processing with the same apparatus.

From the substrate direction changing section 2 to the immersion tank 5, the immersion tank 5
In the process of moving the substrate 13 from the substrate to the substrate direction changing unit 3, in addition to the conversion of the substrate in the horizontal and vertical directions, the operation of rotating the substrate 180 degrees while holding it vertically can be performed. In the horizontal transfer processing portion, the processing surface of the substrate can always be directed upward.

A concrete example of conversion of the substrate direction will be described with reference to FIG. The substrate 13 sent from the loader unit 1 with the processing surface 17 facing upward is received by the substrate direction changing unit 2 (see FIG.
(A)). The substrate direction conversion unit 2 converts the substrate direction from the horizontal direction to the vertical direction (FIG. 3- (b)), and then adds the operation of rotating the substrate 180 degrees (FIG. 3- (c)). Next, a dipping process is performed in the single-wafer dipping tank 5 (FIG. 3- (d)). After the dipping process is completed, it is sent to the substrate direction changing unit 3 (Fig. 3-
(E)). The substrate direction is changed from the vertical direction to the horizontal direction (FIG. 3- (f)) and sent to the horizontal transport single-wafer processing section in the next step.

Such a rotating operation may be performed an odd number of times while the substrate 13 is held vertically, and usually, for economic reasons, any one of the substrate direction changing section 2 or the substrate direction changing section 3 or the transfer robot 15 is rotated. Add a mechanism,
It is sufficient to rotate once. In the above example, the rotation operation is added by the substrate direction changing unit 2, but it should be emphasized that the rotation operation is not limited to the substrate direction changing unit 2 in principle. It should also be emphasized that the processing surface of the substrate may be oriented upward without rotation.

The order of loading and unloading the substrates into and out of the dipping tank is programmed by programming the operation sequence of the transfer robot so that the so-called first-in first-out operation can be performed. The substrate direction conversion unit 3 receives the substrate held vertically from the transfer robot 14, then converts the direction of the substrate from vertical to horizontal and sends it to the next process by horizontal transfer, and then receives the next substrate from the transfer robot 15. The operation of waiting so as to be taken is repeated at tact t ₁ . The rinse unit 7, the water washing unit 8, and the ultrasonic water washing unit 9 spray the substrate with the rinse liquid or the pure water or ultrasonically clean the substrate while horizontally transferring the substrate at the tact t ₁ . In such a portion, the processing liquid according to the purpose is pumped up from the lower tank 18 (not shown).
Then, the substrate is processed using the spray nozzle 19 and the ultrasonic cleaning machine 20. In the drying unit 10, the substrate is horizontally transported at tact t ₁ and the substrate is drained with an air knife 21 and dried. The unloader unit 11 repeats the operation of receiving the substrate sent at the tact t ₁ and storing it in another cassette 22.

It should be emphasized that FIG. 1 shows an example of the present invention, and the present invention is not limited to the example of FIG. Here, in order to explain the present invention more clearly, a manufacturing apparatus for a liquid crystal display or the like has been described as a typical example, but the present invention can also be applied to a wet processing apparatus for manufacturing a semiconductor.
In such a case, the substrate is not a glass substrate but a silicon wafer or the like. Further, although the example of FIG. 1 shows an example in which the horizontal transfer type single wafer processing and the long-time dipping processing, which are greatly different in processing time, are combined, the essence of the present invention is not limited to this example. It is self-evident that the present invention can also be used for combining a single-wafer spinning treatment and a dipping treatment with significantly different treatment times, or for combining a short-time single-wafer dipping treatment and a long-dipping dipping treatment. Further, in such a case, it is obvious that the present invention is not limited only to the direction of the substrate such as horizontal transfer or horizontal single-wafer processing. It should also be emphasized that even when the long-time immersion treatment is a long-time spraying treatment, there is no change in the essence of the present invention, and the long-time immersion treatment alone does not limit the present invention. Is.

[0023]

The loader unit 1 shown in FIG. 1 has a function of installing a single or a plurality of cassettes 12, taking out substrates 13 from the cassettes 12 at regular time intervals, and feeding the substrates into a wet processing apparatus at regular time intervals. If It can be pointed out that such a function is realized even when another sheet processing apparatus is directly connected to the wet processing apparatus of the present invention and the loader section is omitted. In such a case, the other single-wafer processing device may be considered as the loader. The loader exemplified in the present invention is well known to those skilled in the art.

The substrate direction changing section 2 provides a function necessary for transferring the substrate from the horizontal transfer type single wafer processing to the vertical dipping processing.

The dipping processing unit 6 characterized by comprising the single-wafer conveying system 4 provides the single-wafer dipping processing. For this purpose, it is necessary to include the transfer robot 15 and the dipping tank 5. The dipping tank 5 is designed to have a position 16 at which a plurality of p substrates can be dipped. At this time, since the position where a new substrate is immersed must always be empty in order to perform the single-wafer dipping process, the maximum number of substrates that can be actually immersed is p.
You should know that it becomes -1. The number of substrates that can be actually immersed is not limited to this maximum number, and an arbitrary number q of p-1 or less may be selected. Q into one dipping tank
When the single-wafer dipping process is performed at tact t ₁ so as to dip a single substrate, the total dipping time becomes qt ₁ , and it is possible to set an arbitrary dipping time by programming so that q can be set. Is also possible.

The number of the dipping tanks 5 is not limited to one, but it is possible to provide a plurality of m units. In this case, when the single-wafer dipping process is performed at tact t ₁ so that q substrates are dipped in one dipping tank, the total dipping time becomes mqt ₁ , and if programmed so that q can be set, It is also possible to set an arbitrary total immersion time. The immersion time, the number of substrate immersions p, and the number of baths m may be determined in consideration of the tact t ₁ by the above method.

Further, the number of dipping tanks and the total number of substrate installation positions in the dipping tanks should be determined from a combination of technically required dipping time, factors such as deterioration of the processing liquid due to dipping treatment, and economic factors of the apparatus price. However, in order to take full advantage of the effects of the present invention, it is desirable that the total number of substrate installation positions is generally 5 or more.

On the other hand, it is necessary for the single-wafer transfer system 4 to be able to program the operation sequence of the transfer robot so that the substrates 13 can be taken out and put in the order in which they are put in and taken out. The design and manufacture of such a transfer robot are well known to those skilled in the art. belongs to. Furthermore, the number of such transfer robots is not limited to one, and a plurality of such transfer robots may be used, but usually, the single is selected for economic reasons.

The substrate direction changing section 3 provides a function necessary for delivering the substrate from the vertical dipping process to the horizontal transfer type single wafer process.

Rinsing section 7, water washing section 8, ultrasonic washing section 9,
For the drying unit 10 and the like, a horizontal conveyance type single-wafer processing known to those skilled in the art is selected. These parts are appropriately selected for the purpose of wet processing, and not all are essential to the present invention, and a plurality of parts may be installed in order to realize the necessary functions. Further, the drying unit is not limited to the air knife, and spin drying may be performed as necessary, and it is more preferable. Further, if necessary, baking with far infrared rays or baking with a hot plate may be added, which is more preferable. Furthermore, it is also optional to add a cleaning function for the substrate surface using ultraviolet rays. The configuration of such a well-known horizontal transfer type single-wafer processing portion should be determined mainly from the viewpoint of technical requirements and economical efficiency according to the processing purpose of the substrate.

The unloader unit 11 may have a function of installing one or a plurality of cassettes 22, receiving substrates from the wet processing apparatus at regular time intervals, and storing the substrates in the cassette at regular time intervals. It can be pointed out that such a function is also realized when the unloader section is omitted and another wet wafer processing apparatus is directly connected after the wet processing apparatus of the present invention. In such a case, the other single-wafer processing device may be considered as an unloader. The unloader illustrated in the present invention is well known to those skilled in the art.

According to the present invention as described above, since the immersion treatment can be performed for a long time because of the above-mentioned action, the substrate can be treated at the tact t ₁ of a short time interval while securing a sufficient immersion time. T is a short time as in the first case described above, and the size of the device may remain small as in the second case described above. For this reason, it has become possible to provide a large processing capacity, which cannot be realized by the conventional technology, with a low-cost device.

[0033]

【Example】

Example 1 A concrete example of the present invention is shown in FIG. In this embodiment, the present invention is applied to a photoresist stripping apparatus, and as a device configuration, a loader unit 1, a substrate direction on an inlet side having a function of changing the direction from horizontal to vertical and rotating while maintaining vertical holding A vertical dipping processing unit 6 including a conversion unit, a substrate direction conversion unit on the exit side from vertical to horizontal, and a transfer robot; a rinse unit 7; a spray water washing unit 8; an ultrasonic water washing unit 9;
It comprises a spin dryer 23, a hot plate dryer 24, and an unloader 11.

The vertical dipping treatment section is provided with three dipping baths having seven positions where substrates can be dipped, and in the case of single-wafer treatment with a tact of 1 minute, (7-1) × 3, which is 18 minutes in total. It was designed so that the immersion treatment time could be secured.

The resist stripping apparatus is constructed so that the resist stripping operation repeated many times in the liquid crystal display manufacturing process can be processed very efficiently.
With the ability to process a 200 x 270 mm glass substrate with a tact time of about 1 minute in single-wafer processing, the total length of the device is 15
It was found that the value can be set to m or less, and the effects of the present invention can be sufficiently exhibited.

Further, when such a resist stripping apparatus was used to manufacture a liquid crystal display using an amine-based high-performance resist stripping solution and an organic solvent-based rinsing solution, there was a problem in wet type resist stripping. It was also found that there is no peeling residue and the peeling treatment can be performed extremely cleanly.

The effects of the present invention include the use of the vertical immersion treatment of the present invention which can secure a sufficient treatment time, the adoption of a stripping solution suitable for resist stripping, and the spray-type ultrasonic cleaning suitable for horizontal transfer single-wafer processing. It should be emphasized that it was brought about by the adoption of and the introduction of spin drying.

(Embodiment 2) A concrete embodiment of the present invention is shown in FIG.
Shown in. In this embodiment, the present invention is applied to a glass substrate cleaning apparatus, and as a device configuration, a loader unit 1, a substrate direction conversion on the inlet side having a function of changing the direction from horizontal to vertical and rotating while maintaining vertical holding. Vertical dipping processing unit 6 provided with a substrate direction changing unit on the exit side from vertical to horizontal and a transfer robot, a rinse unit 7, a spray water washing unit 8, an ultrasonic water washing unit 9, a spin drying unit 23, a hot plate drying It is the same as the first embodiment in that the unit 24 and the unloader 11 are included.

The vertical dipping treatment section is provided with two dipping baths having 11 positions where substrates can be dipped. When single wafer processing is performed with a tact of 1 minute, (11-1) × 2 is 20 minutes in total. It was designed so that the immersion treatment time could be secured.

Such a glass substrate cleaning apparatus is constructed so that the cleaning operation of the glass substrate surface to be put into the manufacturing process of the liquid crystal display can be processed very efficiently, and a glass substrate of 200 × 270 mm is separated into individual sheets. It has been found that the total length of the apparatus can be set to 15 m or less, while having the capability of processing with a takt time of about 1 minute, and the effect of the present invention can be sufficiently exhibited.

Furthermore, when an alkaline high performance glass substrate cleaning agent was applied to the production of a liquid crystal display using such a glass substrate cleaning apparatus, the amount of foreign matter adhering to the surface of the glass substrate could be significantly reduced. It was also found that the cleaning process could be performed extremely cleanly.

(Embodiment 3) In this embodiment, the present invention is applied to an anodizing device for aluminum wiring, and the device structure is the same as that of the first and second embodiments. However, the vertical dipping treatment section is provided with one dipping tank having 31 positions where the substrate can be dipped, and when the single-wafer processing is performed with a tact of 1 minute, 30
It was designed so that a dipping treatment time of minutes can be secured.

The anodizing device is constructed so that the anodizing work of the aluminum wiring, which is necessary in the manufacturing process of the liquid crystal display, can be processed very efficiently.
With the ability to process a 200 x 270 mm glass substrate with a tact time of about 1 minute in single-wafer processing, the total length of the device is 15
It was found that the value can be set to m or less, and the effects of the present invention can be sufficiently exhibited.

(Embodiment 4) In this embodiment, the present invention is applied to a silicon wafer cleaning apparatus. As shown in the apparatus configuration in FIG. 6, the loader 1 rotates from horizontal to vertical and vertical holding. It has the vertical dipping processing unit 6 including the substrate direction changing unit 2 on the inlet side, the substrate direction changing unit 3 on the outlet side from the vertical direction to the horizontal direction, and the transfer robot 15.
Is the same as. The difference from the first embodiment is that the short-time single-wafer processing is the spin processing, and is configured by the spin processing unit 25.
A spin water washing unit 27 having a spin cup 26 suitable for wafer processing, a hydrofluoric acid washing unit 28, a spin drying unit 29, and a delivery unit 30 to an unloader are provided therein.
That is, a dedicated transport system 32 having a transport robot 31 for transporting between the spin processes is provided.

The wafer cleaning apparatus is constructed so that the cleaning work required in the semiconductor product manufacturing process can be processed extremely efficiently, and it has 26 fixed positions 1.
In the dipping tank 5 provided with 6, a cleaning agent for exclusive use of a silicon wafer containing ammonia and hydrogen peroxide water can be used for cleaning, and then cleaning with water, cleaning with hydrofluoric acid, cleaning with water, and spin drying can be performed. This device has a capability of processing a 6-inch silicon wafer in a single-wafer process with a tact time of about 1 minute, while the total length of the device can be 10 m or less and the processing time per lot can be set within 1 hour. It turned out that the effect can be exhibited sufficiently.

Further, when the wafer cleaning apparatus was applied to the manufacture of semiconductor products, it was found that the amount of foreign matter adhering to the wafer surface can be significantly reduced and the cleaning processing can be performed extremely cleanly.

(Embodiment 5) In this embodiment, the present invention is applied to an etching apparatus for a silicon wafer, and the apparatus configuration is as follows: loader 1, substrate direction change on the inlet side that rotates with vertical holding from horizontal to vertical. As in the fourth embodiment, the unit 2 and the vertical dipping processing unit 6 including the substrate direction changing unit 3 on the exit side from vertical to horizontal and the transfer robot 15 are provided. The difference from the first embodiment is that short-time single-wafer processing is spin processing, and a two-stage spin water washing section 27, a spin drying section 29, and a delivery section 30 to an unloader are provided inside the spin processing section 25. That is, a dedicated transport system 32 having a transport robot 31 for transporting between the spin processes is provided.

The wafer cleaning apparatus is constructed so that the etching work of the oxide film, which is required in the manufacturing process of semiconductor products, can be processed very efficiently, and the immersion tank 5 having 26 fixing positions 16 is provided. Etching of the oxide film with hydrofluoric acid can be carried out, followed by washing with water, washing with water and spin drying. This device has a capability of processing a 6-inch silicon wafer in a single-wafer process with a tact time of about 1 minute, while the total length of the device can be 10 m or less and the processing time per lot can be set within 1 hour. It turned out that the effect can be exhibited sufficiently.

(Comparative Example) For comparison with the present invention, an example of a conventional horizontal transport single-wafer processing apparatus is shown in FIG. This wet treatment device comprises a loader unit 1, a horizontal spray treatment unit 33 with two-stage spraying, a rinse unit 7, a spray water washing unit 8, an ultrasonic water washing unit 9, an air knife drying unit 10, and an unloader 11. In order to realize long-time wet processing with such an apparatus, it is necessary to significantly lengthen the processing tact of the substrate in order to secure the processing time, and there is a problem that the production efficiency is significantly reduced. The conventional horizontal transport single-wafer processing apparatus is not suitable for the wet processing requiring a processing time of more than 10 minutes as shown in the above embodiment, but rather suitable for the wet processing requiring a processing time of 5 minutes or less. You can judge that

[0050]

Industrial Applicability The present invention can provide a highly efficient wet processing apparatus and a processing method using the same, which are free from problems such as an increase in apparatus cost and an increase in processing time, which are problems in conventional apparatuses and methods. For this reason, the substrate can be processed with the tact at short time intervals while ensuring a sufficient immersion time, and the processing can be performed in a short time with a small apparatus.
For this reason, it becomes possible to provide a large processing capacity that cannot be realized by the conventional technology with a low-priced device, and the technical and economic effects thereof are immeasurable.

[Brief description of drawings]

FIG. 1 is a diagram illustrating a configuration example of the present invention with a device cross section.

FIG. 2 is a diagram for explaining the operation of the present invention in a device section.

FIG. 3 is a diagram showing substrate direction conversion of the present invention.

FIG. 4 is a diagram illustrating a configuration example of the present invention in terms of a device appearance.

FIG. 5 is a diagram for explaining a configuration example of the present invention as an external view of the apparatus.

FIG. 6 is a diagram for explaining a configuration example of the present invention as an external view of the apparatus.

FIG. 7 is a diagram illustrating a configuration example of a conventional wet processing apparatus with an apparatus cross section.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Loader part, 2 ... Substrate direction conversion part, 3 ... Substrate direction conversion part, 4 ... Single wafer conveyance system, 5 ... Single wafer dipping tank, 6 ... Immersion treatment part, 7 ... Rinse part, 8 ... Water washing part, 9 … Ultrasonic water washing section, 1
0 ... drying section, 11 ... unloader section, 12 ... cassette, 1
3 ... Substrate, 14 ... Conveying roller, 15 ... Conveying robot, 1
6 ... Substrate fixing position, 17 ... Substrate processing surface, 18 ... Lower tank, 19 ... Spray nozzle, 20 ... Ultrasonic cleaner, 2
DESCRIPTION OF SYMBOLS 1 ... Air knife, 22 ... Other cassette, 23 ... Spin drying part, 24 ... Hot plate drying part, 25 ... Spin processing part, 26 ... Spin cup, 27 ... Spin water washing part, 28 ...
Hydrofluoric acid cleaning section, 29 ... Spin drying section, 30 ... Delivery section,
31 ... Transport robot, 32 ... Dedicated transport system, 33 ... Spray horizontal processing unit.

Continuation of the front page (51) Int.Cl. ⁶ Identification code Reference number within the agency FI Technical display location B08B 3/04 B 2119-3B B65G 49/04 D G02F 1/13 101 1/1333 500 H01L 21/027 21 / 306 21/68 A (72) Inventor Hiroshi Sasaki 3300 Hayano, Mobara, Chiba Hitachi, Ltd. Electronic Devices Division (72) Inventor Norio Tsukii 3300 Hayano, Mobara, Chiba Hitachi, Ltd. (72) Inventor Mitsuo Nakatani 3300, Hayano, Mobara-shi, Chiba Hitachi, Ltd. Electronic Device Division

Claims (35)

[Claims] 1. A wet processing apparatus comprising a single-wafer dipping processing apparatus comprising a substrate direction changing unit, a single-wafer carrying system, and a single-wafer dipping tank, and a horizontal carrying type single-wafer processing apparatus. 2. A wet processing apparatus according to claim 1, wherein the single-wafer immersion processing apparatus has a structure for vertically holding a substrate in an immersion tank. 3. The substrate direction changing section according to claim 1, comprising a portion for converting the substrate from the horizontal direction to the vertical direction and a portion for converting the substrate from the vertical direction to the horizontal direction, and these are the immersion tank. A wet processing device, which is arranged before and after the. 4. The single-wafer transfer system according to claim 1, wherein the single-wafer transfer system has a transfer robot, and the transfer robot receives the substrate at a substrate direction conversion unit and installs the substrate at one of a plurality of predetermined positions in the immersion tank. Then, the wet processing apparatus is characterized in that the operation of moving to another predetermined position, taking out the substrate at the other position already installed, and transferring it to the substrate direction changing unit is repeated at regular time intervals. 5. A wet processing system according to claim 1, wherein the operation sequence of the transfer robot is programmed such that the order of loading and unloading the substrates into and from the dipping tank is a first-in, first-out order. Processing equipment. 6. A wet processing apparatus comprising a substrate direction changing unit according to claim 1 and a mechanism for rotating a substrate while holding it vertically in one of the single-wafer transfer systems. 7. A wet processing apparatus, wherein the single-wafer dipping tank according to claim 1 is provided with a plurality of positions for installing substrates. 8. A wet processing apparatus, wherein the single-wafer dipping bath according to claim 1 comprises a plurality of baths provided with a plurality of positions for mounting substrates. 9. A wet processing apparatus, wherein the single-wafer dipping tank according to claim 1 comprises five or more as a total of a plurality of positions for installing substrates. 10. The horizontal transfer type single-wafer processing apparatus according to claim 1, wherein the loader, rinse, spray cleaning, ultrasonic cleaning, drying,
A wet processing device characterized by being selected from an unloader. 11. The wet processing apparatus according to claim 1, wherein the substrate is processed at regular time intervals. 12. A wet processing apparatus comprising a single-wafer processing apparatus having a short processing time and a single-wafer processing apparatus having a long processing time. 13. The single-wafer processing apparatus having a short processing time according to claim 12 is selected from a spray or spin processing apparatus, and the single-wafer processing apparatus having a long processing time is selected from a spray or dipping processing apparatus. Wet processing apparatus characterized by being a thing. 14. A cleaning apparatus, wherein the wet processing apparatus according to claim 1 is used for cleaning. 15. A cleaning apparatus, wherein the wet processing apparatus according to claim 12 is used for cleaning. 16. A resist stripping apparatus, wherein the wet processing apparatus according to claim 1 is used for stripping a resist. 17. A resist stripping apparatus, wherein the wet processing apparatus according to claim 12 is used for stripping a resist. 18. An etching apparatus using the wet processing apparatus according to claim 1 for etching. 19. An etching apparatus using the wet processing apparatus according to claim 12 for etching. 20. An anodic oxidation apparatus, wherein the wet treatment apparatus according to claim 1 is used for anodic oxidation. 21. An anodizing device, wherein the wet treatment device according to claim 12 is used for anodizing. 22. A wet processing apparatus according to claim 1, wherein the wet processing apparatus processes a glass substrate or a silicon wafer. 23. The wet processing apparatus according to claim 12, which processes a glass substrate or a silicon wafer. 24. A wet processing method using the wet processing apparatus according to claim 1. 25. A wet processing method using the wet processing apparatus according to claim 12. 26. The wet processing method according to claim 24, which is a cleaning method. 27. The wet processing method according to claim 25, which is a cleaning method. 28. The wet processing method according to claim 24, which is a resist stripping method. 29. The wet processing method according to claim 25, which is a resist stripping method. 30. The wet processing method according to claim 24, which is an etching method. 31. The wet processing method according to claim 25, which is an etching method. 32. The wet processing method according to claim 24, which is an anodizing method. 33. The wet treatment method according to claim 25, which is an anodizing method. 34. The wet processing method according to claim 24, wherein a glass substrate or a silicon wafer is processed. 35. The wet processing method according to claim 24, wherein a glass substrate or a silicon wafer is processed.