JP2004327537A - Method, equipment, and system for substrate processing - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of processing a substrate which is capable of removing a resist film hard of detachment without causing damage to the substrate or a film serving as the underlying material of the resist film. <P>SOLUTION: A wafer W is equipped with a resist cured film 79 formed through an ion implantation process, and the wafer W is subjected to processing so as to expose the resist cured film 79 to water vapor kept at a prescribed temperature, whereby the the resist cured film 79 is popped out (step 4). By this setup, craters 88 are formed in the cured layer 79a of the resist cured film 79, and uncured parts 79b are exposed inside the cured layer 79a. The wafer W is dried out (step 5), then the wafer W is processed with processing gas containing ozone and water vapor, whereby the uncured resist parts 79b are turned water-soluble (step 6). Thereafter, the wafer W is rinsed with water to remove the resist cured film 79 from it (step 7). <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a substrate processing method, a substrate processing apparatus, and a substrate processing system for removing a hard-to-peel film such as a resist film cured by an ion implantation process or an etching process from a substrate.
[0002]
[Prior art]
For example, in the manufacturing process of a semiconductor device, predetermined ions are implanted into a semiconductor wafer (silicon substrate) or various films formed on the surface of the silicon substrate by using ion implantation technology, and the surface characteristics are changed. I have. For example, a pn junction can be formed by implanting arsenic (As), phosphorus (P), boron (B), or the like into a silicon substrate.
[0003]
Such ion implantation is often performed after forming a resist mask having a predetermined circuit pattern on the surface of a silicon substrate or the like. In this case, after the ion implantation, an unnecessary resist mask is removed. There is a need to. Here, since the resist mask on which the ion implantation at a high concentration has been performed is deteriorated (hardened) so as to be difficult to remove, a method of performing wet cleaning after plasma ashing or the like is used as a method for removing the resist mask (hardening). For example, see Patent Document 1).
[0004]
[Patent Document 1]
JP-A-7-37780 (paragraphs 21 to 29, FIGS. 2 to 4)
[0005]
[Problems to be solved by the invention]
However, when the silicon substrate is subjected to the plasma ashing, there is a possibility that a portion other than the resist film to be removed, that is, the underlying silicon substrate or the film into which the ions are implanted may be oxidized. Further, there is a problem that the silicon substrate or the like is variously damaged, for example, the ashing gas is injected into the silicon substrate or the film due to the anisotropy of the plasma ashing, and the characteristics of the portion change. In addition, the silicon substrate is charged by plasma ashing, and the silicon substrate may be damaged by a subsequent discharge.
[0006]
Further, the surface of the resist film is hardened by the ion implantation process (hereinafter, this portion is referred to as a “hardened layer”), but the inside is substantially the same as before the ion implantation process (hereinafter, this portion is referred to as “uncured layer”). Curing section). In the plasma ashing process, the temperature of the resist film rises to, for example, about 200 ° C. At this time, nitrogen gas (N ₂ ), And this gas destroys the hardened layer and blows it out, and a part of the uncured portion also blows out and adheres to the surface of a silicon substrate or the like, a phenomenon called so-called popping. Occurs. The blowing of such a gas during the plasma ashing process is unhardened before the plasma ashing process because the heat treatment temperature after the development of the resist film is lower than the temperature during the subsequent plasma ashing process. This is because components that evaporate due to heating during the plasma ashing process remain in the portion.
[0007]
In the plasma ashing process, there is a problem in that the uncured portion scattered to the outside due to the popping adheres to the surface of the silicon substrate and contaminates the silicon substrate. Then, it is difficult to completely remove the deposits (splashes) even if wet cleaning is performed later.
[0008]
The present invention has been made in view of such circumstances, and removes a hard-to-remove film such as an ion-implanted resist mask from a substrate or the like without damaging the underlying substrate or the film. To provide a substrate processing method. Another object of the present invention is to provide a substrate processing method for removing a hard-to-peel film from a substrate or the like while suppressing contamination of a substrate or the like that is a base of the hard-to-peel film. A further object of the present invention is to provide a substrate processing apparatus and a substrate processing system used for performing such a substrate processing method.
[0009]
[Means for Solving the Problems]
In order to solve the above problems, according to a first aspect of the present invention, a step of generating popping in a resist film provided on a substrate;
Transforming the resist film in which the popping has occurred to water-soluble while leaving it on the substrate,
Removing the water-soluble resist film from the substrate by a predetermined cleaning solution;
And a substrate processing method characterized by having:
[0010]
According to such a substrate processing method, the resist film can be removed from the substrate or the like without damaging the base such as the substrate on which the resist film is formed. Here, the step of generating popping in the resist film is preferably performed by supplying water vapor at a predetermined temperature to the resist film. In addition, the step of generating popping in the resist film is preferably performed while forming a liquid film on the resist film. At this time, it is preferable to hold the substrate in a rotating state. Accordingly, it is possible to prevent the splash of the resist film scattered on the surface of the substrate when the popping occurs from being attached to the surface of the substrate, and to remove the splash together with the water shaken off from the substrate. Note that the temperature of steam that causes popping of the resist film is higher than the final heat treatment temperature in the step of forming the resist film on the substrate.
[0011]
Further, the step of transforming the resist film in which the popping has occurred into water-soluble is performed, for example, by supplying a processing gas containing water vapor and ozone to the resist film. In this step, by performing the process in such a manner that a liquid film is not formed on the resist film, molecules of the processing gas can easily attack the popped resist film.
[0012]
Furthermore, after the step of removing the water-soluble altered resist film from the substrate with a predetermined cleaning liquid, a cleaning liquid for removing particles from the substrate (for example, an APM chemical liquid (a chemical liquid containing ammonia and aqueous hydrogen peroxide)). , Followed by a two-fluid spray process to assist in particle removal, and a cleaning solution for removing the metal contaminants from the substrate (for example, an HPM chemical solution (chemical solution containing dilute hydrochloric acid and hydrogen peroxide solution)) ) And a step of subjecting the substrate to a rinsing treatment with pure water are preferably performed, thereby improving the quality of the substrate.
[0013]
Such a substrate processing method is suitably used when the resist film that causes popping is cured by ion implantation or etching. However, the present invention is not limited to this, and even when applied to a film that has not been cured by such processing, the effect can be sufficiently obtained. When the process of curing the resist film is an ion implantation process, the ion dose amount to the substrate is 1 × 10 ¹⁴ atoms / cm ² Even with the above, according to the present invention, the resist film cured by the ion implantation can be easily removed.
[0014]
According to the present invention, there is provided a substrate processing system for performing the substrate processing method according to the first aspect.
That is, according to a second aspect of the present invention, there is provided a substrate processing system for removing a resist film from a substrate having a resist film,
A holding mechanism for holding the substrate in a substantially horizontal posture, a rotating mechanism for rotating the holding mechanism, a steam supply mechanism for supplying steam at a predetermined temperature to a resist film on the substrate held by the holding mechanism, and the holding mechanism A vapor / liquid treatment device having a cleaning liquid supply mechanism for supplying a predetermined cleaning liquid to the surface of the substrate held by
A modification processing apparatus having a chamber for accommodating the substrate, and a processing gas supply mechanism for supplying a processing gas containing ozone and water vapor into the chamber;
And a substrate processing system comprising:
[0015]
In this substrate processing system, a substrate transport mechanism for transporting a substrate between a vapor / liquid processing apparatus and a denaturing processing apparatus, and a substrate are sequentially subjected to steam processing in a vapor / liquid processing apparatus and processed in a denaturing processing apparatus with a processing gas. In addition, the apparatus may further include a process control mechanism for controlling the vapor / liquid processing apparatus, the modification processing apparatus, and the substrate transfer mechanism so that the cleaning processing is performed in the vapor / liquid processing apparatus.
[0016]
The cleaning liquid supply mechanism provided in the vapor / liquid processing apparatus has a function of selectively discharging pure water, a chemical liquid for removing particles from the substrate, and a chemical liquid for removing metal contaminants from the substrate to the substrate. It is preferable to use Thereby, the removal of the resist film, the removal of particles, and the removal of metal contaminants from the substrate can be performed continuously. The steam supply mechanism includes a steam nozzle that injects steam to the surface of the substrate, a nozzle height adjustment mechanism that adjusts the distance between the steam outlet of the steam nozzle and the surface of the substrate, and a water vapor nozzle that is horizontally mounted on the substrate. The one having a nozzle scanning mechanism for scanning at a variable speed in the direction is preferably used.
[0017]
In a vapor / liquid processing apparatus, a steam supply mechanism is operated while rotating a substrate by driving a rotation mechanism to supply steam at a predetermined temperature to the surface of the substrate, and at this time, the surface of the substrate is wetted with pure water. It is preferable that the apparatus further includes a steam processing control mechanism for controlling the processing of the substrate with steam so that the pure water on the substrate is shaken out of the substrate by the rotation of the substrate. Used.
[0018]
According to a third aspect of the present invention, there is provided a substrate processing apparatus for removing a resist film from a substrate having a resist film cured by a predetermined process,
A holding mechanism for holding the substrate in a substantially horizontal posture,
A rotation mechanism for rotating the holding mechanism,
A steam supply mechanism for supplying steam at a predetermined temperature to the resist film on the substrate held by the holding mechanism,
A cleaning liquid supply mechanism for supplying a predetermined cleaning liquid to the surface of the substrate held by the holding mechanism,
With
The cleaning liquid supply mechanism removes pure water, a chemical liquid for removing organic substances from the substrate, a chemical liquid for removing particles from the substrate, and a metal contaminant from the substrate as the cleaning liquid for the substrate held by the holding mechanism. A substrate processing apparatus characterized by selectively discharging a chemical solution to be processed.
[0019]
In such a substrate processing apparatus, a process of popping a resist film with water vapor, a process of removing organic substances on the substrate, a process of removing particles from the substrate, and a process of removing metal contaminants are performed on the substrate. It can be performed continuously without transporting.
[0020]
In this substrate processing apparatus, as in the above-described substrate processing system, the water vapor supply mechanism adjusts the distance between the water vapor nozzle for injecting water vapor to the surface of the substrate and the water vapor injection port of the water vapor nozzle and the surface of the substrate. A mechanism having a nozzle height adjusting mechanism and a nozzle scanning mechanism for scanning a water vapor nozzle horizontally on a substrate at a variable speed is preferably used. In addition, the steam supply mechanism is operated while rotating the substrate by driving the rotation mechanism to supply steam at a predetermined temperature to the surface of the substrate, and at that time, the surface of the substrate is kept wet with pure water, In addition, a device further provided with a steam treatment control mechanism for controlling the treatment of the substrate with steam so that a portion of the pure water on the substrate is shaken out of the substrate by the rotation of the substrate is preferably used. Specific examples of the chemical solution for removing organic substances from the substrate include an SPM chemical solution (a chemical solution containing sulfuric acid and hydrogen peroxide solution).
[0021]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, a semiconductor wafer (silicon wafer) will be described as a substrate, and an embodiment of the present invention will be specifically described with reference to the accompanying drawings.
FIG. 1 is an explanatory diagram illustrating a schematic configuration of the wafer processing system 100. The wafer processing system 100 includes a film forming apparatus 101, a resist coating / developing apparatus 102, an exposure apparatus 103, an ion implantation apparatus 104, and a denaturing / cleaning apparatus 105. The wafer W can be transferred between these apparatuses.
[0022]
As the film forming apparatus 101, a CVD apparatus for forming an insulating film, a stopper film, and the like on the wafer W by a chemical vapor deposition (CVD) method, and an SOD (Spin) for applying a chemical to the wafer W to form an insulating film and the like. On Dielectric) device is used.
[0023]
The resist coating / developing device 102 is used for forming a resist film used as a mask or the like for ion implantation. Although the detailed structure of the resist coating / developing device 102 is not shown, an anti-reflection film (BARC) and a resist film are sequentially formed on the wafer W by spin coating in the resist coating / developing device 102. The resist film exposed by the pattern is developed, and the wafer W on which the anti-reflection film is formed, the wafer W on which the resist film is formed, the wafer W subjected to the exposure processing, and the wafer W subjected to the development processing are respectively Thermal treatment is performed under predetermined conditions.
[0024]
The exposure device 103 is used to expose a predetermined circuit pattern on the wafer W on which the resist film has been formed. In the ion implantation apparatus 104, ion implantation processing of As, P, B, and the like is performed on the wafer W and the insulating film formed on the wafer W according to the processing stage of the wafer W. The denaturing / cleaning apparatus 105 is an apparatus that performs various processes for removing, from the wafer W, a resist film (mask) or the like that has become unnecessary in a semiconductor device manufacturing process. In this description, it is mainly used to remove a resist film cured by ion implantation (hereinafter referred to as a “resist cured film”). As shown in FIG. 8C, the resist cured film is hardened by the implanted ions (hereinafter, referred to as a “hardened layer”) and passes through or reaches the implanted ions. As a result, the implanted ions do not substantially exist and have a portion that has not been cured (hereinafter, referred to as a “raw resist portion”).
[0025]
Subsequently, the configuration of the denaturing / washing device 105 will be described in detail. FIG. 2 is a schematic plan view of the denaturing / washing device 105, FIG. 3 is a schematic front view thereof, and FIG. 4 is a schematic rear view thereof. The denaturing / cleaning apparatus 105 is a processing apparatus in which a carrier accommodating a wafer W is carried in from another processing apparatus or the like, and conversely, a carrier accommodating the wafer W that has been processed in the denaturing / cleaning apparatus 105 is subjected to the next processing. And a carrier station 4 having a plurality of processing units for performing a process of removing a resist cured film, a process of washing / drying a wafer W, and the like. The transfer station 3 includes a transfer station 3 for transferring wafers W therebetween, and a chemical station 5 for manufacturing, preparing, and storing a chemical solution, pure water, a processing gas, and the like used in the processing station 2.
[0026]
Inside the carrier C, the wafers W are accommodated in a substantially horizontal posture at regular intervals in the vertical direction (Z direction). The loading / unloading of the wafer W into / from the carrier C is performed through one side surface of the carrier C, and this side surface is not shown in FIG. 2 (not shown in FIG. 2; FIG. 3 and FIG. 4 show a state where the lid 10a is removed). ) Can be opened and closed freely.
[0027]
As shown in FIG. 2, the carrier station 4 has a mounting table 6 on which the carrier C can be mounted at three places along the Y direction in the figure. It is mounted on the mounting table 6 so as to face the boundary wall 8a between the transfer station 4 and the transfer station 3. A window 9a is formed at a position corresponding to the place where the carrier C is placed on the boundary wall 8a, and a shutter 10 for opening and closing the window 9a is provided on the side of the transport station 3 of each window 9a. Each of these shutters 10 has gripping means (not shown) for gripping the lid 10a of the carrier C. As shown in FIGS. 3 and 4, the shutter 10 is moved toward the transfer station 3 with the lid 10a gripped. The lid 10a can be retracted.
[0028]
The wafer transfer device 7 provided in the transfer station 3 has a wafer transfer pick 7a that can hold the wafer W. The wafer transfer device 7 is movable in the Y direction along a guide 11 (see FIGS. 3 and 4) provided on the floor of the transfer station 3 so as to extend in the Y direction. Further, the wafer transfer pick 7a is slidable in the X direction, is movable up and down in the Z direction, and is rotatable (θ rotation) in the XY plane.
[0029]
With such a structure, in a state where the shutter 10 is retracted so that the inside of the carrier C and the transfer station 3 communicate with each other via the window 9a, the wafer transfer pick 7a The carrier C can be accessed, and a wafer W at an arbitrary height position in the carrier C can be carried out of the carrier C, and conversely, the wafer W can be carried in an arbitrary position of the carrier C.
[0030]
The processing station 2 has two wafer mounting units (TRS) 13a and 13b on the transfer station 3 side. For example, when the wafer mounting unit (TRS) 13b receives a wafer W from the transfer station 3, The wafer mounting unit (TRS) 13 a is used for mounting the wafer W on the processing station 2 when the predetermined processing is completed and the wafer W is returned to the transfer station 3. Used. As will be described later, in the processing station 2, since the clean air is down-flowed from the fan filter unit (FFU) 25, the processed wafer W in the processing station 2 is transferred to the upper wafer mounting unit (TRS) 13a. , Contamination of the wafer W is suppressed.
[0031]
On a boundary wall 8b between the transfer station 3 and the processing station 2, a window 9b is provided at a portion corresponding to the position of the wafer mounting units (TRS) 13a and 13b. The wafer transfer pick 7a can access the wafer mounting units (TRS) 13a and 13b through the window 9b, and transfer the wafer W between the carrier C and the wafer mounting units (TRS) 13a and 13b. I do.
[0032]
At a substantially central portion of the processing station 2, a main wafer transfer device 14 that transfers the wafer W in the processing station 2 is provided. The main wafer transfer device 14 is rotatable around the Z axis. The wafer transfer arm 14a of the main wafer transfer device 14 is movable in the horizontal direction and is movable up and down in the Z direction. With such a structure, the wafer transfer arm 14a can access each unit provided in the processing station 2, and transfers the wafer W between these units. A fan filter unit (FFU) 25 that blows clean air into the processing station 2 is provided above the processing station 2.
[0033]
On the back side of the processing station 2, film modification processing units (VOS) 15 a to 15 h that mainly perform modification processing of the resist cured film with these molecules of the processing gas containing ozone and water vapor are arranged. Here, "modification of the cured resist film" means that the raw gas portion of the cured resist film is changed to water-soluble with the processing gas remaining on the wafer W. When a polymer residue that has not been ion-implanted is present on the wafer W, the polymer residue is also modified to be water-soluble by the processing gas.
[0034]
The film denaturation processing units (VOS) 15a to 15d and the film denaturation processing units (VOS) 15e to 15h have a substantially symmetric structure with respect to a boundary wall 22b. This allows the main wafer transfer device 14 to have a simple structure that does not require a mechanism for moving in the X direction, and facilitates access to the film modification processing units (VOS) 15a to 15h of the wafer transfer arm 14a. It has become.
[0035]
Here, taking the film modification processing unit (VOS) 15a as an example, its structure will be described in detail with reference to the schematic sectional view shown in FIG. The film modification processing unit (VOS) 15a has a closed chamber 30 for accommodating a wafer W, and the chamber 30 is composed of a fixed lower container 41a and a lid 41b that covers the upper surface of the lower container 41a. The lid 41b can be moved up and down by a cylinder 43 fixed to the frame 42 of the membrane modification processing unit (VOS) 15a.
[0036]
An O-ring 51 is disposed on the upper surface of the raised portion around the lower container 41a. When the cylinder 43 is driven to lower the lid 41b, the peripheral edge of the back surface of the lid 41b abuts on the upper surface of the raised portion of the peripheral edge of the lower container 41a, and the O-ring 51 is compressed and sealed in the chamber 30. A processing space is formed.
[0037]
The lower container 41a is provided with a stage 33 on which the wafer W is placed. On the surface of the stage 33, proximity pins 44 for supporting the wafer W are provided at a plurality of locations. The height of the proximity pins 44 is set to a height at which the back surface of the wafer W does not come into contact with the condensed droplets when dew condensation occurs on the surface of the stage 33, for example, 1 mm or more and 3 mm or less. Thereby, adhesion of a watermark or particles to the back surface of the wafer W is prevented, and the quality of the wafer W can be kept high.
[0038]
A heater 45a is embedded in the stage 33, and a heater 45b is embedded in the lid 41b, so that the stage 33 and the lid 41b can be held at a predetermined temperature. Thus, the temperature of the wafer W is kept constant. Note that a temperature gradient may be provided in the processing space by changing the temperatures of the stage 33 and the lid 41b.
[0039]
On the back surface of the lid 41b, claw members 46 for holding the wafer W are provided at, for example, three places (only two places are shown in FIG. 5). The wafer transfer arm 14a transfers the wafer W to the claw member 46. When the lid 41b is lowered with the claw member 46 holding the wafer W, the wafer W is transferred to the proximity pins 44 provided on the stage 33 during the lowering.
[0040]
In the chamber 30, a gas inlet 34a for introducing a processing gas containing ozone and water vapor into the inside and a gas outlet 34b for exhausting the processing gas to the outside are provided at a lower portion so that the processing gas flows in a substantially horizontal direction inside the chamber 30. It is provided in the container 41a. The processing gas supply device 16 is connected to a gas inlet 34a, and an exhaust device 32 is connected to a gas outlet 34b. In FIG. 5, the height positions of the gas inlet 34a and the gas outlet 34b are shown below the height of the wafer W placed on the proximity pins 44, but the gas inlet 34a and the gas outlet 34b. 34b may be provided at a higher position.
[0041]
The processing of the wafer W with the processing gas is preferably performed while maintaining the inside of the chamber 30 at a constant positive pressure. Therefore, the sealing between the lower container 41a and the lid 41b depends on the pressing force of the cylinder 43 so that the processing gas does not flow out from the inside of the chamber 30 to the outside through the space between the lower container 41a and the lid 41b. In addition to this, the protrusions 47a and 47b provided on the end surfaces of the lower container 41a and the lid 41b are sandwiched between the rollers 59a and 59b and tightened.
[0042]
On the front side of the processing station 2, vapor / liquid processing units (VLTs) 12a to 12d are arranged. In these vapor / liquid processing units (VLTs) 12a to 12d, a process of supplying water vapor at a predetermined temperature to the resist cured film to cause popping of the resist cured film, and removing the popped resist cured film from the wafer W to remove organic matter from the wafer W. The processing of removing the resist cured film from the wafer W by processing with the chemical solution to be removed, and the processing of the wafer W after the processing in the film modification processing units (VOS) 15a to 15h are completed with a predetermined cleaning liquid, thereby forming the cured resist film on the wafer W The process of removing the wafer W, the washing process of the wafer W, and the drying process are performed.
[0043]
The vapor / liquid processing units (VLT) 12a and 12b and the vapor / liquid processing units (VLT) 12c and 12d have structures that are substantially symmetric about the boundary wall 22a. FIG. 6 is a sectional view showing a schematic structure of the vapor / liquid processing unit (VLT) 12a. An annular cup (CP) is arranged at the center of the vapor / liquid processing unit (VLT) 12a, and a spin chuck 71 is arranged inside the cup (CP). The spin chuck 71 is rotationally driven by a drive motor 72 in a state where the wafer W is fixedly held by vacuum suction. At the bottom of the cup (CP), a drain 73 for discharging the cleaning liquid and pure water is provided.
[0044]
The drive motor 72 is arranged so as to be able to move up and down in an opening 74 a provided in the unit bottom plate 74, and is connected to a lift drive mechanism 76 made of, for example, an air cylinder and a lift guide 77 via a cap-shaped flange member 75 made of, for example, aluminum. Have been. A cylindrical cooling jacket 78 made of, for example, SUS is attached to a side surface of the drive motor 72, and a flange member 75 is attached so as to cover an upper half of the cooling jacket 78.
[0045]
When supplying a chemical solution or the like to the wafer W, the lower end 75a of the flange member 75 is in close contact with the unit bottom plate 74 near the periphery of the opening 74a, thereby sealing the inside of the unit. When the wafer W is transferred between the spin chuck 71 and the wafer transfer arm 14a, the lifting drive mechanism 76 lifts the drive motor 72 and the spin chuck 71 to move the lower end of the flange member 75 from the unit bottom plate 74. It comes to float.
[0046]
The vapor / liquid processing unit (VLT) 12a supplies a cleaning liquid supply mechanism 80a that supplies a predetermined cleaning liquid to the resist cured film on the surface of the wafer W held by the spin chuck 71, and supplies water vapor at a predetermined temperature to the resist cured film. A steam supply mechanism 80b and a gas supply mechanism (not shown) for injecting a dry gas onto the wafer W are provided.
[0047]
The cleaning liquid supply mechanism 80a includes a cleaning liquid discharge nozzle 81a that discharges a predetermined cleaning liquid onto the surface of the wafer W held by the spin chuck 71, and a nitrogen gas (N ₂ Gas), a predetermined cleaning liquid is sent to a spray nozzle 81c for spraying pure water onto the surface of the wafer W in a spray form, and a predetermined cleaning liquid is sent to the cleaning liquid discharge nozzle 81a. ₂ A cleaning liquid supply unit 17a for supplying gas, a scan arm 82a that holds the cleaning liquid discharge nozzle 81a and the spray nozzle 81c and is capable of moving back and forth in the Y direction, a vertical support member 85a for supporting the scan arm 82a, and a unit bottom plate 74 And an X-axis drive mechanism 96 attached to the guide rail 84 laid in the X-axis direction to move the vertical support member 85a in the X-axis direction.
[0048]
The cleaning liquid supply unit 17a includes an SPM chemical containing sulfuric acid and hydrogen peroxide, an APM chemical containing ammonia and hydrogen peroxide, an HPM chemical containing dilute hydrochloric acid and hydrogen peroxide, and pure water used as a rinsing liquid. , To the cleaning liquid discharge nozzle 81a. Further, the cleaning liquid supply unit 17a includes pure water and N ₂ The gas can be simultaneously supplied to the spray nozzle 81c. The scan arm 82a is vertically movable (Z direction) by a Z-axis drive mechanism 97 provided on the vertical support member 85a. With such a structure, the cleaning liquid discharge nozzle 81a and the spray nozzle 81c can be moved to arbitrary positions on the wafer W and can be retracted to predetermined positions outside the cup (CP).
[0049]
The water vapor supply mechanism 80b includes a water vapor injection nozzle 81b that injects water vapor at a predetermined temperature to the resist cured film on the surface of the wafer W held by the spin chuck 71, a water vapor supply unit 17b that sends water vapor to the water vapor injection nozzle 81b, It has a scan arm 82b that holds the injection nozzle 81b and can move forward and backward in the Y direction, and a vertical support member 85b that supports the scan arm 82b. The scan arm 82b is movable in the X-axis direction and the Z-axis direction by an X-axis driving mechanism (not shown) provided on the guide rail 84 and a Z-axis driving mechanism (not shown) provided in the vertical support member 85b. With such a structure, the water vapor spray nozzle 81b can be moved to an arbitrary position on the wafer W and can be retracted to a predetermined position outside the cup (CP).
[0050]
The X-axis driving mechanism that slides the scan arm 82b in the X-axis direction makes the scanning speed when the water vapor jet nozzle 81b scans over the wafer W faster at the center of the wafer W and slower at the outer periphery of the wafer W. It has a function to adjust it. Further, as the steam jet nozzle 81b, for example, a nozzle in which a range in which steam directly hits the wafer W is set to a region of about 4 mmφ to 10 mmφ is used. The Z-axis driving mechanism for moving the scan arm 82b in the Z-axis direction is configured such that when steam is being injected from the steam injection nozzle 81b, the distance between the steam injection port (tip) of the steam injection nozzle 81b and the wafer W is 5 mm or more. It can be kept at 10 mm or less.
[0051]
The gas supply mechanism (not shown) also has the same configuration as the cleaning liquid supply mechanism 80a and the like, and has a configuration capable of supplying a dry gas such as a nitrogen gas to the surface of the wafer W.
[0052]
The chemical station 5 includes a processing gas supply device 16 that adjusts a processing gas containing ozone and water vapor and supplies the processed gas to the film modification processing units (VOS) 15a to 15h, and a vapor / liquid processing unit (VLT) 12a that supplies a predetermined cleaning liquid. And a steam supply unit 17b for sending steam to the steam / liquid processing units (VLT) 12a to 12d. Further, the chemical station 5 is provided with a gas supply adjusting device (not shown) for controlling the supply of the dry gas to the vapor / liquid processing units (VLTs) 12a to 12d. The supply of the drying gas is performed using a supply line such as a factory piping (not shown).
[0053]
The processing gas supply device 16 includes, for example, an ozone generator for ozonizing oxygen gas, and a nitrogen gas supply for supplying nitrogen gas for diluting ozone and nitrogen gas for purging the inside of the chamber 30 after denaturing the resist cured film. It has a line, a steam generator for vaporizing pure water to generate steam, and a mixer for mixing ozone / nitrogen mixed gas and steam to generate a processing gas. The ozone generator can also generate an ozone / nitrogen mixed gas by ozonizing oxygen in the air.
[0054]
Next, a process of removing the resist cured film from the wafer W provided with the resist cured film cured by the ion implantation using the wafer processing system 100 configured as described above will be described. FIG. 7 is a flowchart showing an example of the step of removing the cured resist film, and FIG. 8 is an explanatory view schematically showing a schematic change in the shape of the wafer W according to the processing step shown in FIG. In FIG. 8, the wafer W is described as “Si-sub”.
[0055]
First, the wafer W is carried into the film forming apparatus 101, where the insulating film 61 is formed on the surface of the wafer W (step 1). FIG. 8A shows a state where Step 1 is completed. Next, the wafer W on which the insulating film 61 is formed is carried into the resist coating / developing apparatus 102, where a resist film 62 is formed on the insulating film 61, and then the wafer W is transferred to the exposure apparatus 103, where it is transferred. The resist film 62 is exposed in a predetermined pattern, and then the wafer W is returned to the resist coating / developing apparatus 102 to develop the resist film 62 (Step 2). Thereby, the resist film 62 is patterned. FIG. 8B shows a state in which Step 2 has been completed.
[0056]
Next, the wafer W is transported to the ion implantation apparatus 104, where ion implantation of a predetermined element is performed (step 3). For example, ions of a predetermined element are injected at a predetermined speed so that the ions do not stay in the insulating film 61, for example, the ion implantation amount (dose amount) into the wafer W is 1 × 10 ¹⁴ atoms / cm ² When the implantation is performed as described above, the resist film 62 functions as a stopper, and ions are implanted into the wafer W below the groove of the resist film 62 to form a region 64 in which the characteristics of the wafer W have changed. The resist film 62 changes into a cured layer 79a whose surface is cured by the implanted ions, for example, and changes to a cured resist film 79 in which a raw resist portion 79b remains inside the cured layer 79a. FIG. 8C shows a state where Step 3 is completed.
[0057]
The wafer W having been subjected to the ion implantation processing is transferred to one of the vapor / liquid processing units (VLTs) 12a to 12d of the denaturing / cleaning device 105, where the wafer W is kept at a predetermined temperature so that the resist cured film 79 is popped. Water vapor is injected from the water vapor injection nozzle 81b to the surface of the cured resist film 79 (step 4). As described above, this popping is a phenomenon in which, when the resist cured film 79 is heated, some components contained in the raw resist portion 79b pierce through the cured layer 79a and evaporate. An outlet 88 is formed, whereby a part of the raw resist portion 79b is exposed to the outside. FIG. 8D shows a state in which popping has occurred in the resist cured film 79 by the processing in step 4.
[0058]
In order to perform the process of step 4, the process of transporting the wafer W after the ion implantation process to the vapor / liquid processing units (VLTs) 12a to 12d is performed, for example, as follows. That is, the carrier C in which the wafers W for which the ion implantation process has been completed is first placed on the mounting table 6 by an operator or an automatic transfer device. Next, the window 9a is opened by retracting the lid 10a and the shutter 10 of the carrier C to the transfer station 3 side, and then one wafer W at a predetermined position of the carrier C is placed on the wafer C by the wafer transfer pick 7a. It is transported to the unit (TRS) 13b. Subsequently, the wafer W mounted on the wafer mounting unit (TRS) 13b is taken out by the wafer transfer arm 14a and transferred to any one of the spin chucks 71 of the vapor / liquid processing units (VLT) 12a to 12d.
[0059]
In order to generate popping in the resist cured film 79, the temperature of the steam supplied to the resist cured film 79 is determined by the final heat treatment temperature in the step of forming the resist film 62 on the wafer W (specifically, the heat treatment temperature after the development treatment). (Post bake) temperature). Further, while rotating the wafer W held by the spin chuck 71 at a predetermined rotation speed and injecting water vapor from the water vapor injection nozzle 81b, the water vapor injection nozzle 81b is scanned between the central portion and the outer peripheral portion of the wafer W. By doing so, water vapor is supplied to the entire resist cured film 79. At this time, if the scan speed of the scan arm 82b holding the water vapor injection nozzle 81b is increased at the center of the wafer W and reduced at the outer periphery, popping can be uniformly generated in the entire resist cured film 79.
[0060]
When popping occurs in the resist cured film 79, a part of the cured layer 79a and a part of the raw resist portion 79b are scattered and scattered around. For this reason, it is preferable to hold a state in which a pure water film is formed on the surface of the wafer W during the processing in step 4 so that the splashes of the scattered raw resist and the like hardly adhere to the surface of the wafer W. Such a pure water film is formed by dew condensation of the water vapor injected from the water vapor injection nozzle 81b to the wafer W. When the water vapor is sprayed from the water vapor injection nozzle 81b onto the surface of the wafer W, the wafer W is rotating. Therefore, the droplets of the raw resist or the like scattered on the surface of the wafer W by the popping are pure water flowing down from the peripheral edge of the wafer W. At the same time, it easily flows off the wafer W.
[0061]
After uniformly popping the resist cured film 79, if necessary, pure water is supplied to the surface of the wafer W while rotating the wafer W, so that the raw resist or the like scattered on the surface of the wafer W is removed. Splashes may be washed away. Then, the wafer W is rotated at a predetermined rotation speed and spin-dried (Step 5). Next, the wafer W is transported to one of the film modification processing units (VOS) 15a to 15h, where a modification treatment for changing the raw resist portion 79b to water-soluble by a processing gas is performed (step 6).
[0062]
The loading of the wafer W into, for example, the film modification processing unit (VOS) 15a is performed as follows. First, wafer transfer arm 14a unloads wafer W from vapor / liquid processing units (VLTs) 12a to 12d. In the film denaturation unit (VOS) 15a, the lid 41b of the chamber 30 is retracted above the lower container 41a. Next, the wafer transfer holding the wafer W is carried out so that the wafer W enters a position slightly higher than a portion of the claw member 46 provided on the lid 41b holding the wafer W (a portion projecting in the horizontal direction). The arm 14a enters. Next, when the wafer transfer arm 14a is lowered, the wafer W is transferred to the claw member 46. After retreating the wafer transfer arm 14a from the film modification processing unit (VOS) 15a, the lid 41b is lowered to bring the lid 41b into close contact with the lower container 41a, and further provided on the end surfaces of the lower container 41a and the lid 41b. The chambers 30 are hermetically sealed by clamping the protrusions 47a and 47b between the rollers 59a and 59b. The wafer W is transferred from the claw member 46 to the proximity pins 44 while the lid 41b is being lowered.
[0063]
The processing of step 6 is performed on the wafer W carried into the film modification processing unit (VOS) 15a in the following manner. The heaters 45a and 45b generate heat to maintain the stage 33 and the lid 41b at a predetermined temperature. At this time, for example, if the temperature of the lid 41b is set higher than the temperature of the stage 33 by a predetermined temperature, when the processing gas is supplied into the chamber 30 later, the density of water vapor in the chamber 30 becomes higher than that of the lid 41b. Since the water pressure is higher on the stage 33 side, the water vapor can be efficiently applied to the wafer W.
[0064]
When the stage 33 and the lid 41b are maintained at a predetermined temperature and the temperature distribution of the wafer W is substantially constant, first, only the ozone / nitrogen mixed gas is supplied from the processing gas supply device 16 into the chamber 30, The inside of the chamber 30 is purged with a mixed gas of ozone / nitrogen and adjusted so as to have a predetermined positive pressure.
[0065]
Thereafter, a processing gas obtained by mixing steam with an ozone / nitrogen mixed gas is supplied from the processing gas supply device 16 into the chamber 30. The molecules of the processing gas attack the carbon atoms (carbon atoms of the resist material) of the raw resist portion 79b through the jet port 88, and change the raw resist portion 79b to water-soluble. FIG. 8E shows a state in which the process of step 6 has been completed.
[0066]
Note that the processing gas does not damage the insulating film 61. If polymer residues that have not been ion-implanted into the wafer W or droplets of the raw resist portion 79b that have adhered to the wafer W due to popping are present, these are also changed to water-soluble by the processing in step 6. The processing of the wafer W by the processing gas is performed, for example, for 3 to 5 minutes. The supply amount of the processing gas to the chamber 30 and the exhaust amount from the chamber 30 are adjusted so that the inside of the chamber 30 has a predetermined positive pressure.
[0067]
When a predetermined processing time by the processing gas has elapsed, the supply of the processing gas is stopped, and then a nitrogen gas is supplied into the chamber 30 from the processing gas supply device 16 and the inside of the chamber 30 is purged with the nitrogen gas. During the purging process, the ozone / nitrogen mixed gas is also supplied from inside the exhaust device 32 so that the ozone / nitrogen mixed gas does not flow backward from the exhaust device 32 when the chamber 30 is opened thereafter. Completely exhaust the mixed gas.
[0068]
When the processing in step 6 is completed, the raw resist portion 79b of the cured resist film 79 has changed to be water-soluble, but this portion has not been separated from the wafer W, and the cured layer 79a has also been removed from the wafer W. Not peeled. Then, the wafer W after the processing in step 6 is returned to one of the vapor / liquid processing units (VLTs) 12a to 12d, where a rinsing process is performed (step 7).
[0069]
In the water washing process in step 7, it is not necessary to completely remove the resist cured film 79 from the wafer W, and a residue that can be removed by the next APM chemical solution treatment may remain on the wafer W. In other words, the processes in steps 6 and 7 may be performed so that the resist cured film 79 is completely removed by the subsequent APM chemical solution process. For this reason, the processing of steps 6 and 7 may be performed a plurality of times depending on the degree of peeling of the resist cured film 79.
[0070]
The transfer of the wafer W from the film modification processing unit (VOS) 15a to the vapor / liquid processing unit (VLT) 12a for performing the processing in step 7 is performed as follows. First, when the nitrogen gas purge in the chamber 30 is completed, it is confirmed that the internal pressure of the chamber 30 is equal to the external pressure. This is because if the chamber 30 is opened in a state where the internal pressure of the chamber 30 is higher than the atmospheric pressure, the chamber 30 may be damaged. After confirming the internal pressure of the chamber 30, the tightening of the lower container 41a and the lid 41b by the rollers 59a and 59b is released, and the lid 41b is raised. When raising the lid 41b, the wafer W is held by the claw member 46 and rises together with the lid 41b. The wafer transfer arm 14a enters the gap between the lower container 41a and the lid 41b, and transfers the wafer W from the claw member 46 to the wafer transfer arm 14a. The wafer transfer arm 14a holding the wafer W in this way transfers the wafer W to the spin chuck 71 provided in the vapor / liquid processing unit (VLT) 12a.
[0071]
The processing in step 7 for the wafer W carried into the vapor / liquid processing unit (VLT) 12a is performed, for example, by forming a paddle by discharging pure water from the cleaning liquid discharge nozzle 81a to the surface of the wafer W held in a substantially horizontal posture. After a lapse of a predetermined time, the wafer W is rotated to shake off pure water from the surface of the wafer W, and the pure water is supplied to the surface of the wafer W while rotating the wafer W. In the process of Step 7, since the raw resist portion 79b has changed to be water-soluble, the hardened layer 79a is also separated from the wafer W when this portion is dissolved. FIG. 8F shows a state where step 7 is completed.
[0072]
The wafer W from which the resist cured film 79 has been removed in this manner is subjected to a process of further removing particles from the wafer W in the vapor / liquid processing unit (VLT) 12a (for example, an APM chemical solution and a two-fluid spray process; Step 8). ) And a process of removing metal contaminants from the wafer W (for example, a process using an HPM chemical solution; step 9), and a water washing process (step 10).
[0073]
In the APM chemical processing, for example, the APM chemical is supplied from the cleaning liquid discharge nozzle 81a to the surface of the wafer W to form a paddle of the APM chemical, and after a predetermined time has elapsed, the APM chemical is rotated while rotating the wafer W at a predetermined rotation speed. Is further supplied to the surface of the wafer W. After the APM chemical treatment, a two-fluid spray process is performed in which pure water is sprayed onto the surface of the wafer W by mixing nitrogen water with pure water by a spray nozzle 81c to remove particles on the wafer W. At this time, the APM chemical solution on the surface of the wafer W is also washed away. The surface of the insulating film 61 may be thinly removed by the APM chemical treatment depending on the composition. The treatment with the HPM chemical is performed in the same manner as the treatment with the APM chemical.
[0074]
After the metal contaminant removal process using the HPM chemical solution and the subsequent water washing process (rinsing process) are completed, the wafer W is spin-dried. This spin drying may be performed while supplying a drying gas to the wafer W.
[0075]
The wafer W from which the resist cured film 79 and the particles and metal contaminants have been removed by the processing in the vapor / liquid processing unit (VLT) 12a (or 12b to 12d) is subjected to the vapor / liquid processing unit (VLT) 12a by the wafer transfer arm 14a. Is transferred to a wafer mounting unit (TRS) 13a, from which it is stored in a predetermined position of the carrier C by the wafer transfer device 7.
[0076]
Next, another step of removing the resist cured film 79 from the wafer W will be described with reference to the flowchart shown in FIG. An insulating film 61 is formed on the surface of the wafer W (Step 1), and a resist film 62 having a predetermined pattern is formed on the insulating film 61 (Step 2) in the same manner as Steps 1 to 5 described above. W is implanted with ions of a predetermined element (step 3), and the resist cured film 79 is vapor-deposited at a predetermined temperature so that popping occurs in the resist cured film 79 changed from the resist film 62 by the ion implantation treatment in step 3. The processing is performed (Step 4), and the wafer W is spin-dried (Step 5). Here, the state of the wafer W after the water vapor treatment in step 4 is as shown in FIG. 8C, and a part of the raw resist portion 79 b is exposed at the ejection port 88.
[0077]
In the processing method of the wafer W previously shown in FIG. 7, the wafer W after the processing of step 4 is removed from any of the vapor / liquid processing units (VLT) 12a to 12d and the film modification processing unit (VOS) 15a. In order to carry the wafer W to any one of the wafers 15 to 15 h, a process of spin-drying the wafer W after the process of Step 4 (Step 5) was performed. However, as described below, in the processing method of the wafer W shown in FIG. 8, since the wafer W is not transported to the modification processing units (VOS) 15a to 15h after the processing of Step 4, the processing of Step 5 is omitted. be able to.
[0078]
When the processing in step 5 is completed, the wafer W is in one of the vapor / liquid processing units (VLTs) 12a to 12d (for example, 12a), so that the wafer W is transferred to the vapor / liquid processing unit (VLT) 12a. Next, the wafer W is processed with the SPM chemical solution while keeping the state (step 6A). The SPM chemical solution attacks the raw resist portion 79b from the cured layer 79a to dissolve the raw resist portion 79b, whereby the entire resist cured film 79 can be peeled from the wafer W.
[0079]
In the process using the SPM chemical solution, the SPM chemical solution is supplied from the cleaning liquid discharge nozzle 81a to the surface of the wafer W to form a paddle of the SPM chemical solution, and after a predetermined time elapses, the wafer W is subjected to the predetermined process. This can be performed by further supplying the SPM chemical solution to the surface of the wafer W while rotating at the rotation speed, and then supplying pure water to the wafer W to wash the SPM chemical solution from the wafer W. The SPM solution is preferably used after being heated to a predetermined temperature so that the raw resist portion 79b can be easily dissolved.
[0080]
On the wafer W from which the resist cured film 79 has been removed by the SPM chemical liquid processing, the vapor / liquid processing unit (VLT) 12a continuously performs steps 8 to 10 in the processing step of the wafer W shown in FIG. A process of removing particles from the wafer W (for example, an APM chemical solution and a two-fluid spray process; Step 7A); and a process of removing metal contaminants from the wafer W (for example, an HPM chemical solution; Step 8A). Then, a water washing process (step 9A) is performed.
[0081]
In the processing shown in the flowchart of FIG. 9, the film modification processing units (VOS) 15a to 15h are not used. Therefore, when it is clear that the membrane denaturation processing units (VOS) 15a to 15h are not always used, the denaturing / washing unit 105 is replaced with the vapor / liquid treatment instead of the membrane denaturation processing units (VOS) 15a to 15h. A unit (VLT) is provided.
[0082]
The embodiments of the present invention have been described above, but the present invention is not limited to such embodiments. For example, in the above description, a single-wafer processing apparatus that processes wafers W one by one is shown as the denaturing / cleaning apparatus 105. However, denaturing processing of a resist film using a processing gas containing ozone and water vapor, cleaning processing of the wafer W In addition, the steam treatment for causing popping of the resist cured film can be performed using an apparatus (a so-called batch processing apparatus) that processes a plurality of (for example, 25) wafers W at a time. If all the processes are performed in a single-wafer process or all processes are performed in a batch process, stagnation of wafers W in the processing process (for example, until a predetermined number of wafers W are collected in order to perform a batch process after the single-wafer process). (A state in which batch processing cannot be performed) can be avoided.
[0083]
In the above-described method of removing the cured resist film, the dose amount by ion implantation is 1 × 10 ¹⁴ atoms / cm ² It goes without saying that it may be used in the following cases. Further, in the above description, the case where the cured layer is formed on the resist film by the ion implantation processing to make the resist film difficult to peel has been described. As another example, an etching process can be mentioned, and the present invention can be applied to a film which is hardened by the etching process and is difficult to peel off from a base.
[0084]
In the above description, the case where the ions are implanted into the wafer W has been described, but the target into which the ions are implanted may be an insulating film, a semiconductor film, or a conductive film formed on the wafer W. Further, although a semiconductor wafer has been exemplified as the substrate, the substrate is not limited to this, and may be a glass substrate or a ceramic substrate. Further, the processing gas may contain another component other than ozone and water vapor, for example, a gas such as hydrogen peroxide.
[0085]
【The invention's effect】
As described above, according to the present invention, it is possible to remove a resist film or the like that has been hardened by ion implantation or the like and is difficult to peel off from the substrate without damaging the base thereof, so that the quality of the product can be improved. Is remarkably increased.
[Brief description of the drawings]
FIG. 1 is an explanatory diagram showing a schematic configuration of a wafer processing system.
FIG. 2 is a schematic plan view of a denaturing / washing device.
FIG. 3 is a schematic front view of a denaturing / washing device.
FIG. 4 is a schematic rear view of a denaturing / washing device.
FIG. 5 is a schematic cross-sectional view of a membrane denaturation processing unit (VOS) provided in the denaturation / washing device.
FIG. 6 is a schematic sectional view of a vapor / liquid processing unit (VLT) provided in the denaturing / washing device.
FIG. 7 is a flowchart showing a resist film removing step.
FIG. 8 is an explanatory view schematically showing a schematic morphological change of a wafer according to the processing flow shown in FIG. 7;
FIG. 9 is a flowchart showing another step of removing the resist film.
[Explanation of symbols]
2: Processing station
3: Transfer station
4: Carrier station
12a to 12d; vapor / liquid processing unit (VLT)
15a to 15h; membrane modification processing unit (VOS)
61; insulating film
62; resist film
71; Spin chuck
79; Resist cured film
79a; cured layer
79b; Raw resist section
80a; cleaning liquid supply mechanism
80b; steam supply mechanism
100; wafer processing system
104; ion implanter
105; denaturing / washing device
W; Wafer (substrate)

Claims (18)

A step of generating popping in a resist film provided on the substrate,
Transforming the resist film in which the popping has occurred to water-soluble while leaving it on the substrate,
Removing the water-soluble resist film from the substrate by a predetermined cleaning solution;
A substrate processing method comprising: 2. The method according to claim 1, wherein the step of popping the resist film is performed by supplying water vapor to the resist film. The substrate processing method according to claim 2, wherein the step of generating popping in the resist film is performed while forming a liquid film on the resist film. 4. The method according to claim 1, wherein the step of transforming the resist film in which the popping has occurred to water-soluble is performed by supplying a processing gas containing water vapor and ozone to the resist film. 13. The substrate processing method according to the above item. 5. The substrate processing method according to claim 4, wherein the step of converting the resist film in which the popping has occurred to water-soluble is performed so that a liquid film is not formed on the resist film. The substrate processing method according to claim 1, wherein the step of generating popping in the resist film is performed while rotating the substrate. 7. The method according to claim 1, wherein a temperature of the steam in the step of generating popping in the resist film is higher than a final heat treatment temperature in the step of forming the resist film on the substrate. 13. The substrate processing method according to the above item. The method according to claim 1, further comprising a step of drying the resist film in which the popping has occurred, between the step of generating the popping in the resist film and the step of transforming the resist film in which the popping has occurred into water-soluble. The substrate processing method according to any one of claims 1 to 7. After the step of removing the water-soluble resist film from the substrate by a predetermined cleaning liquid,
Treating the substrate with a chemical solution that removes particles from the substrate, and then performing a two-fluid spray process to assist in removing the particles;
Treating the substrate with a chemical solution that removes metal contaminants from the substrate;
Subjecting the substrate to a rinsing treatment with pure water,
The substrate processing method according to any one of claims 1 to 8, further comprising: The substrate processing method according to any one of claims 1 to 9, wherein the resist film that causes the popping is cured by an ion implantation process or an etching process. A substrate processing system for removing the resist film from a substrate having a resist film,
A holding mechanism for holding the substrate in a substantially horizontal posture, a rotating mechanism for rotating the holding mechanism, a steam supply mechanism for supplying steam at a predetermined temperature to a resist film on the substrate held by the holding mechanism, and the holding mechanism A vapor / liquid treatment device having a cleaning liquid supply mechanism for supplying a predetermined cleaning liquid to the surface of the substrate held by
A modification processing apparatus having a chamber for accommodating the substrate, and a processing gas supply mechanism for supplying a processing gas containing ozone and water vapor into the chamber;
A substrate processing system comprising: A substrate transport mechanism that transports the substrate between the vapor / liquid processing device and the denaturation processing device;
The vapor / liquid processing device and the substrate are sequentially treated with steam in the vapor / liquid treatment device, treated with the processing gas in the denaturation treatment device, and cleaned in the vapor / liquid treatment device. A process control mechanism for controlling the denaturation processing device and the substrate transfer mechanism,
The substrate processing system according to claim 11, further comprising: The cleaning liquid supply mechanism selectively discharges pure water, a chemical liquid for removing particles from the substrate, and a chemical liquid for removing metal contaminants from the substrate to the substrate held by the holding means. The substrate processing system according to claim 11 or 12, wherein The steam supply mechanism,
A steam nozzle for injecting steam onto the surface of the substrate held by the holding mechanism,
A nozzle height adjustment mechanism that adjusts the interval between the water vapor injection port of the water vapor nozzle and the surface of the substrate,
A nozzle scanning mechanism that scans the water vapor nozzle horizontally on the substrate at a variable speed,
The substrate processing system according to any one of claims 11 to 13, further comprising: The vapor / liquid treatment device comprises:
By driving the rotation mechanism to rotate the substrate held by the holding mechanism, the water vapor supply mechanism is operated to supply water vapor at a predetermined temperature to the surface of the substrate. Steam processing control for controlling the processing of the substrate with the water vapor such that the pure water on the substrate is held wet with pure water and a part of the pure water on the substrate is shaken out of the substrate by the rotation of the substrate The substrate processing system according to any one of claims 11 to 14, further comprising a mechanism. A substrate processing apparatus for removing the resist film from a substrate having a resist film cured by a predetermined process,
A holding mechanism for holding the substrate in a substantially horizontal posture,
A rotation mechanism for rotating the holding mechanism,
A steam supply mechanism for supplying steam at a predetermined temperature to the resist film on the substrate held by the holding mechanism,
A cleaning liquid supply mechanism for supplying a predetermined cleaning liquid to the surface of the substrate held by the holding mechanism,
With
The cleaning liquid supply mechanism removes pure water, a chemical liquid for removing organic substances from the substrate, a chemical liquid for removing particles from the substrate, and a metal contaminant from the substrate as the cleaning liquid for the substrate held by the holding mechanism. A substrate processing apparatus for selectively discharging a chemical solution to be processed. The steam supply mechanism,
A steam nozzle for injecting steam onto the surface of the substrate held by the holding mechanism,
A nozzle height adjustment mechanism that adjusts the interval between the water vapor injection port of the water vapor nozzle and the surface of the substrate,
A nozzle scanning mechanism that scans the water vapor nozzle horizontally on the substrate at a variable speed,
17. The substrate processing apparatus according to claim 16, comprising: By driving the rotating mechanism to rotate the substrate held by the holding mechanism, the water vapor supply mechanism is operated to supply water vapor at a predetermined temperature to the surface of the substrate. Steam processing control for controlling the processing of the substrate with the water vapor such that the pure water on the substrate is kept wet with pure water and a part of the pure water on the substrate is shaken out of the substrate by the rotation of the substrate The substrate processing apparatus according to claim 16, further comprising a mechanism.

Images