JP4299638B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for removing unnecessary resist from the surface of a substrate.

  Semiconductor device manufacturing processes include a process of selectively etching an oxide film or the like formed on the surface of a semiconductor wafer (hereinafter simply referred to as “wafer”), and impurities such as phosphorus, arsenic, and boron on the surface of the wafer. A step of locally implanting (ions) is included. In these processes, a resist film made of an organic material such as a photosensitive resin is patterned on the outermost surface of the wafer in order to prevent etching or ion implantation to an undesired portion, and a portion where etching or ion implantation is not desired is resisted. Masked by the membrane. Since the resist film patterned on the wafer becomes unnecessary after etching or ion implantation, after the etching or ion implantation, a resist removal process for removing the unnecessary resist film on the wafer is performed. Done.

The resist removal process can be achieved by, for example, removing the resist film by ashing (ashing) with an ashing apparatus, and then carrying the wafer into a cleaning apparatus and removing the resist residue after ashing from the surface of the wafer. In the ashing apparatus, for example, a processing chamber containing a wafer to be processed is made an oxygen gas atmosphere, and microwaves are emitted into the oxygen gas atmosphere. As a result, oxygen gas plasma (oxygen plasma) is generated in the processing chamber, and this oxygen plasma is irradiated onto the wafer surface, whereby the resist on the wafer surface is decomposed and removed. On the other hand, in the cleaning apparatus, for example, a chemical solution such as APM (ammonia-hydrogen peroxide mixture) is supplied to the wafer surface, and the wafer surface is cleaned with the chemical solution (resist residue removal process). As a result, the resist residue adhering to the surface of the wafer is removed.
JP 2001-3008078 A

However, when ion implantation is performed, the resist film surface is denatured (hardened) and is difficult to oxidize. Therefore, it is difficult to remove the resist film with oxygen gas plasma, or it takes a long time to remove the resist film. Cost. The resist film whose surface has been altered by ion implantation has an activity of fluorine generated when a plasma of the processing gas is excited using a mixed gas obtained by adding a fluorocarbon gas typified by CF ₄ to an oxygen gas. It is known that it can be removed by species. However, when the wafer W is irradiated with plasma containing active species of fluorine for a long time, a portion of the wafer surface not covered with the resist film (for example, an exposed oxide film) is corroded by the active species of fluorine. There is a fear.

  SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a substrate processing that can satisfactorily remove a resist formed on a substrate (particularly, a resist having a cured layer formed on the surface by ion implantation) without damaging the surface of the substrate. An apparatus and a substrate processing method are provided.

In order to achieve the above object, the invention according to claim 1 is a resist surface modification processing section (13; for performing a process for modifying the surface of the resist (R) formed on the substrate (W). 6), an ashing treatment section (12) for performing a treatment for ashing and removing the resist whose surface has been modified by the treatment in the resist surface modification treatment section, the resist surface modification treatment section, and the above look including a substrate transfer mechanism for transferring the substrate (11) to the ashing unit, cooling said resist surface modification treatment unit is provided with a substrate heating means for heating the substrate (62), the substrate The substrate processing apparatus is provided with a substrate cooling means (63) for performing the above .

In addition, the alphanumeric characters in parentheses represent corresponding components in the embodiments described later. The same applies hereinafter.
According to the first aspect of the present invention, the surface of the resist formed on the substrate can be modified prior to the processing in the ashing processing section.
As a result, when a hard layer is formed on the resist surface by ion implantation, if the hard layer is modified so that it can be easily removed by the process in the ashing process part, the ashing process part is very short. The resist on the substrate can be removed by time treatment. Therefore, even if plasma containing active species of fluorine is used in the treatment by the ashing treatment unit, the resist on the substrate can be removed without damaging the oxide film or the like on the substrate surface.
Then, the substrate can be heated by the substrate heating means, or the substrate can be cooled by the substrate cooling means. As a result, it is possible to cool the substrate immediately after heating the substrate to a predetermined temperature or higher. When a hard layer is formed by ion implantation on the resist surface, the hard The layer can be cracked due to temperature differences. If there is a crack in the hard layer, oxygen active species and the like can enter the hard layer from the crack when the treatment by the ashing treatment unit is a treatment using plasma. Therefore, the resist pattern can be removed from the surface of the substrate with a short time of processing in the ashing unit.

In the case where the substrate processing apparatus targets a substrate having a resist on which a hard layer is formed by ion implantation, the resist surface modification processing unit performs resist implantation by ion implantation into the substrate as described in claim 2. That is, a treatment for modifying the hardened layer (Rh) formed on the surface is performed.
The invention according to claim 3 is characterized in that the resist surface modification processing unit includes sulfuric acid / hydrogen peroxide supply means (133) for supplying a mixed solution of sulfuric acid and hydrogen peroxide solution onto the substrate. A substrate processing apparatus according to claim 1 or 2.

  According to the present invention, a mixed solution of sulfuric acid and hydrogen peroxide solution can be supplied onto a substrate. With this, when a hard layer by ion implantation is formed on the surface of the resist, the hard layer is It can be softened by the oxidizing power of the mixed solution of sulfuric acid and hydrogen peroxide solution, and the hard layer can be easily removed by the treatment by the ashing treatment unit. Therefore, the resist pattern can be removed from the surface of the substrate with a short time of processing in the ashing unit.

According to a fourth aspect of the present invention, the resist surface modification processing unit further includes a substrate mounting table (61) for mounting a substrate, and the substrate heating means is built in the substrate mounting table. The substrate cooling means may supply cooling water to the substrate mounted on the substrate mounting table.
According to a fifth aspect of the present invention, the resist surface modification processing section includes roughness increasing means (71, 72) for increasing the surface roughness of the resist on the substrate. 4. The substrate processing apparatus according to claim 4 .

According to this invention, the surface roughness of the resist can be increased.
Since the surface area of the resist can be increased by increasing the surface roughness of the resist, when the treatment in the ashing process is a treatment using plasma, many oxygen active species are present on the resist surface. Is irradiated. Thereby, since the speed of the process in the ashing process part increases, the resist pattern can be removed from the surface of the substrate in a short time process in the ashing process part.

According to a sixth aspect of the present invention, the roughness increasing means is configured to bring the stamp member (71) having a rough surface opposite to the substrate into contact with and away from the surface of the resist on the substrate. 6. The substrate processing apparatus according to claim 5 , further comprising a contact / separation mechanism (72).
According to the present invention, by pressing the rough surface of the stamp member against the surface of the resist on the substrate, fine irregularities can be formed on the surface of the resist, and the surface roughness of the resist can be increased.

According to a seventh aspect, according to any one of claims 1 to 6, further comprising cleaning unit for cleaning a substrate processing in the ashing unit has been performed (13) A substrate processing apparatus.
According to this invention, the resist remaining on the substrate by the processing in the ashing processing section can be removed by the cleaning processing by the cleaning processing section.

According to an eighth aspect of the present invention, there is provided a resist surface modifying step for modifying a hardened layer formed on a resist surface on a substrate by ion implantation into the substrate, and the surface is modified by the resist surface modifying step. resist saw including a ashing step for removing by ashing, the resist surface modifying step, the temperature change on the substrate by continuously performing the heating and cooling of the substrate in a predetermined order the temperature change step of providing a substrate processing method comprising including Mukoto.
According to the present invention, an effect similar to that described in relation to claim 1 can be obtained.

The invention according to claim 9, wherein the resist surface modifying step, the substrate according to claim 8, comprising the SPM supply step of supplying a mixed solution of sulfuric acid and hydrogen peroxide on the substrate It is a processing method.
According to the present invention, it is possible to obtain the same effects as described in connection with claim 3.

Invention 請 Motomeko 10 described, the resist surface modifying step, the substrate according to claim 8 or 9, characterized in that it comprises a stamp step of pressing the rough on the surface of the resist formed on the substrate It is a processing method.
According to the present invention, an effect similar to the effect described in relation to the sixth aspect can be obtained.

The invention of claim 11 wherein, after the ashing process, according to claim 8 to 10, further comprising a cleaning process for cleaning a substrate processing in the ashing process is performed The substrate processing method according to any one of the above.
According to this method, an effect similar to the effect described in relation to claim 7 can be obtained.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a simplified plan view showing a layout of a substrate processing apparatus according to an embodiment of the present invention. This substrate processing apparatus is an apparatus for performing a resist removal process on a wafer W as an example of a substrate. Specifically, a resist pattern (resist coating, exposure and development steps are performed to form a pattern. The surface of the wafer W is processed by irradiating the surface on which the resist is formed) with ions of impurities such as phosphorus, arsenic, boron, etc., so that impurities are locally implanted into the surface. This is an apparatus for performing a process of removing a resist pattern that is no longer needed. On the surface of the resist pattern after ion implantation (impurity implantation), a hard layer is formed by changing the surface by ion implantation.

  The substrate processing apparatus includes a substrate processing unit 1 and an indexer unit 2 coupled to the substrate processing unit 1. A plurality (three in this embodiment) of cassette mounting tables 3 on which one cassette C can be mounted are arranged side by side on the opposite side of the indexer unit 2 to which the substrate processing unit 1 is coupled. It has been. The cassette C is used when the wafer W is transported in a factory where the substrate processing apparatus is installed, and can accommodate and hold a plurality of wafers W in a stacked state.

  In the substrate processing unit 1, a substrate transfer robot 11 is arranged at the center in plan view, and two plasma ashing units 12 and a chemical solution cleaning unit 13 are arranged so as to surround the substrate transfer robot 11. Has been. The substrate transfer robot 11 can access the plasma ashing unit 12 and the chemical solution cleaning unit 13 so that the wafer W can be transferred between the plasma ashing unit 12 and the chemical solution cleaning unit 13. It has become.

  The indexer unit 2 includes an indexer robot 21, which can access the cassette C mounted on the cassette mounting table 3 and take out an unprocessed wafer W from the cassette C. The unprocessed wafer W taken out can be transferred to the substrate transfer robot 11. Further, the indexer robot 21 can receive the processed wafer W from the substrate transfer robot 11, and can store the received wafer W in the cassette C mounted on the cassette mounting table 3. The processed wafer W may be stored in the cassette C stored when the wafer W is in an unprocessed state, or the cassette C storing the unprocessed wafer W and the processed wafer W are stored. The cassette C to be stored may be separated and stored in a different cassette C from the cassette C stored in an unprocessed state.

  FIG. 2 is a schematic cross-sectional view for explaining the configuration of the plasma ashing unit 12. The plasma ashing unit 12 includes a vacuum vessel 121 formed of stainless steel or the like, a dielectric window 122 provided so as to close the opened upper surface of the vacuum vessel 121, and the vacuum vessel 121 and the dielectric window. An exhaust port 124 for exhausting air from the plasma processing chamber 123 formed by 122, a gas introduction pipe 125 for introducing a processing gas into the plasma processing chamber 123, and a pressure for detecting the pressure in the plasma processing chamber 123 A total 126, a wafer stage 127 placed in the plasma processing chamber 123 for mounting and holding the wafer W, a heater 128 built in the wafer stage 127, and a dielectric window 122 are provided above. A high-frequency power supply for supplying (waveguide) high-frequency power such as microwaves toward the dielectric window 122 And a tube) 129.

An exhaust device 41 including a vacuum pump and a valve is connected to the exhaust port 124. By operating the exhaust device 41, the gas in the plasma processing chamber 123 can be exhausted through the exhaust port 124. In addition, the pressure in the plasma processing chamber 123 can be adjusted by controlling the exhaust speed of the exhaust device 41.
A gas introduction device 42 including a valve and a flow rate controller is connected to the gas introduction pipe 125. The gas introducing device 42 is supplied with oxygen-containing gas from the oxygen-containing gas source 421, fluorine-containing gas (fluorine-based gas) from the fluorine-containing gas source 422, and nitrogen gas from the nitrogen gas source 423. In addition, by controlling the opening and closing of valves provided on each gas supply line (oxygen-containing gas supply line, fluorine-containing gas supply line, nitrogen gas supply line) in the gas introduction device 42, plasma is supplied from the gas introduction pipe 125. The type of gas contained in the processing gas introduced into the processing chamber 123 can be changed. Further, by controlling a flow rate controller provided on each gas supply line, the flow rate of the processing gas introduced into the plasma processing chamber 123 from the gas introduction pipe 125 and the concentration of each gas component contained in the processing gas ( Gas mixing ratio) can be changed.

Examples of the oxygen-containing gas include O ₂ , N ₂ O, NO ₂ , CO _{2 and the} like. Examples of the fluorine-containing gas include F ₂ , NF ₃ , SF ₆ , CF ₄ , C ₂ F ₆ , C ₄ F ₈ , CHF ₃ , CH ₂ F ₂ , CH ₃ F, C ₃ F ₈ and S ₂ F. ₂ , SF ₂ , SF ₄ , SOF _{2 and the} like.
A high frequency power supply 43 such as a microwave power supply is connected to the high frequency power supply 129. The high frequency power supply 43 is not limited to a microwave power supply, and may be a VHF power supply, an RF power supply, or the like. In this case, a high frequency power supply using a rod-shaped antenna, a coil, an inductive coupling electrode, a capacitive coupling electrode, etc. High frequency power from the power source 43 can be supplied toward the dielectric window 122.

  The plasma ashing unit 12 includes an ashing control unit 44 having a configuration including a microcomputer. The ashing control unit 44 is provided with a pressure gauge 126, and each gas supply line extending from the oxygen-containing gas source 421, the fluorine-containing gas source 422, and the nitrogen gas source 423 to the gas introduction device 42, and the oxygen-containing gas In addition, detection signals of flow meters 424, 425, and 426 for detecting the flow rates of the fluorine-containing gas and the nitrogen gas are input. The ashing control unit 44 controls the heater 128, the exhaust device 41, the gas introduction device 42, and the high-frequency power source 43 based on each input signal.

  FIG. 3 is a schematic cross-sectional view for explaining the configuration of the chemical liquid cleaning unit 13. The chemical cleaning unit 13 includes a spin chuck 132 for rotating the wafer W while holding the wafer W substantially horizontally in a chemical processing chamber 131 partitioned by a partition, and an SPM on the surface of the wafer W held by the spin chuck 132. A two-fluid spray nozzle 133 for supplying a jet of droplets and a cup 134 for receiving a processing liquid such as SPM that flows down or scatters from the wafer W are provided.

For example, the spin chuck 132 can hold the wafer W in a substantially horizontal posture by holding the wafer W with a plurality of holding members. The spin chuck 132 is applied with a rotational force from the rotational drive mechanism 51, and thus the wafer W held by the plurality of clamping members can be rotated while maintaining a substantially horizontal posture. .
The two-fluid spray nozzle 133 has an SPM supply pipe 52 for supplying SPM (H ₂ SO ₄ + H ₂ O ₂ ) whose temperature is adjusted to a predetermined temperature, and high-pressure nitrogen gas (N ₂ from a nitrogen gas supply source). ) Is connected to a high-pressure nitrogen gas supply pipe 53. When SPM and high-pressure nitrogen gas are simultaneously supplied to the two-fluid spray nozzle 133, the SPM and high-pressure nitrogen gas are mixed to form fine SPM droplets, and these SPM droplets become jets. The two-fluid spray nozzle 133 is discharged. An SPM supply valve 54 for controlling the supply of SPM to the two-fluid spray nozzle 133 is interposed in the middle of the SPM supply pipe 52. A high-pressure nitrogen gas supply valve 55 for controlling the supply of nitrogen gas to the two-fluid spray nozzle 133 is interposed in the middle of the high-pressure nitrogen gas supply pipe 53.

  Further, the two-fluid spray nozzle 133 has a basic form as a scan nozzle that can change the supply position of the liquid droplets in a range including at least a range from the rotation center of the wafer W to the peripheral portion thereof. Specifically, on the side of the spin chuck 132, a swivel shaft 135 is disposed substantially along the vertical direction, and the two-fluid spray nozzle 133 is a nozzle that extends substantially horizontally from the upper end of the swivel shaft 135. It is attached to the tip of the arm 136. A driving force is applied to the turning shaft 135 from the turning drive mechanism 56. By rotating the turning shaft 135 back and forth within a predetermined angular range, the upper portion of the wafer W held by the spin chuck 132 is moved upward. Thus, the nozzle arm 136 can be swung, and along with this, the supply position of the jet of droplets from the two-fluid spray nozzle 133 is scanned (moved) on the surface of the wafer W held by the spin chuck 132. Can be made.

Furthermore, the chemical solution cleaning unit 13 includes a cleaning control unit 57 having a configuration including a microcomputer. The cleaning control unit 57 controls the rotation drive mechanism 51 and the turning drive mechanism 56 during the processing on the wafer W, and controls the opening and closing of the SPM supply valve 54 and the high-pressure nitrogen gas supply valve 55.
FIG. 4 is a conceptual diagram for explaining the operation of the substrate processing apparatus. When the unprocessed wafer W is taken out from the cassette C (see FIG. 1) by the indexer robot 21 (see FIG. 1) and transferred to the substrate transfer robot 11 (see FIG. 1), the substrate transfer robot 11 Carries the wafer W into one of the two chemical liquid cleaning units 13. In the chemical cleaning unit 13, a resist surface modification process for modifying the surface of the resist pattern on the wafer W is performed on the wafer W.

  Specifically, referring to FIG. 3, wafer W loaded into chemical solution cleaning unit 13 is transferred to spin chuck 132 and rotated at a predetermined rotation speed by spin chuck 132. Further, the two-fluid spray nozzle 133 is disposed at a processing start position set above the wafer W held by the spin chuck 132 from a standby position set outside the cup 134. Then, SPM and high-pressure nitrogen gas are supplied to the two-fluid spray nozzle 133, and a jet of SPM droplets is discharged from the two-fluid spray nozzle 133. On the other hand, the supply position (SPM supply position) on the surface of the wafer W from which the jet of droplets from the two-fluid spray nozzle 133 is guided by the swing of the nozzle arm 136 is changed from the rotation center of the wafer W to the wafer W. It moves while drawing an arc-shaped trajectory within the range that reaches the periphery. As a result, a jet of SPM droplets is supplied to the entire surface of the wafer W, and the hard layer formed on the surface of the resist pattern on the wafer W is softened (swelled) by the strong oxidizing power of the SPM. To go. When the reciprocating scan of the SPM supply position is performed a predetermined number of times, the supply of SPM to the wafer W is stopped, and the wafer W having a resist pattern in which the hard layer is softened is unloaded from the chemical solution cleaning unit 13.

Note that the SPM does not necessarily have to be supplied to the surface of the wafer W in the form of a droplet jet, and the flow rate of the nitrogen gas supplied to the two-fluid spray nozzle 133 is reduced (including zero), and the two-fluid. SPM may be supplied from the spray nozzle 133 to the surface of the wafer W in a continuous flow state.
Thereafter, the wafer W carried out from the chemical cleaning unit 13 is carried into one of the two plasma ashing units 12 by the substrate transfer robot 11. In the plasma ashing unit 12, the resist pattern in which the hard layer is modified (softened) by the resist surface modification process by the chemical cleaning unit 13 is ashed to a predetermined thickness (for example, at least the hard layer is removed). Ashing processing to be removed is performed.

  Specifically, referring to FIG. 2, wafer W carried into plasma ashing unit 12 (plasma processing chamber 123) is placed on wafer stage 127 with its surface facing upward. The wafer stage 127 has, for example, a plurality of substrate support portions on the upper surface, and the wafer W is supported by the plurality of substrate support portions from below, whereby the wafer W is held between its lower surface and the upper surface of the wafer stage 127. Hold with an interval of 0.3 mm or less in between. The heater 128 built in the wafer stage 127 is controlled to generate heat at a predetermined temperature before the wafer W is loaded. Thus, when the wafer W is placed on the wafer stage 127, the wafer W is heated to near the heat generation temperature of the heater 128 (the predetermined temperature) due to the heat generated from the heater 128.

The heating temperature of the heater 128 may be set, for example, within a range from room temperature to 400 ° C., and is preferably set within a range from 70 to 180 ° C. Furthermore, in order to prevent contamination of the wafer W due to the popping of the resist pattern, it is more preferable that the temperature is set within a temperature range (for example, 70 to 100 ° C.) that does not cause the popping.
Subsequently, the exhaust of the plasma processing chamber 123 is controlled until the vacuum pump of the exhaust device 41 connected to the exhaust port 124 is controlled, for example, until the atmospheric pressure of the plasma processing chamber 123 becomes 1.33 × 10 ⁻⁷ Pa or less. Done. Thereafter, the gas introduction device 42 is controlled to add, for example, a fluorine-containing gas into the oxygen gas (O ₂ ) so that the concentration thereof is 1% by volume or less from the gas introduction pipe 125 to the plasma processing chamber 123. The resulting mixed gas is introduced as a process gas. The flow rate of the processing gas introduced into the plasma processing chamber 123 is controlled within a range of 100 to 6000 sccm, and the pressure in the plasma processing chamber 123 is controlled by controlling the flow rate of the processing gas introduced and the exhaust flow rate by the exhaust device 41. It is maintained within the range of 5 to 400 Pa.

The processing gas may be a gas containing at least oxygen (atom). For example, nitrogen, argon, helium, neon, krypton, or xenon is used so that the concentration of hydrogen gas (H ₂ ) is 4% by volume or less. The forming gas diluted with an inert gas or the like is supplied to the gas introduction device 42 so that the concentration of the fluorine-containing gas is 1% by volume or less and the concentration of the forming gas is 50% by volume or less. As described above, a mixed gas obtained by mixing a fluorine-containing gas, a forming gas, and an oxygen gas may be introduced into the plasma processing chamber 123 as a processing gas.

  In this way, the microwave as high frequency power is output from the high frequency power supply 43 in a state where the plasma processing chamber 123 is filled with the processing gas. The microwave is guided to the dielectric window 122 by the high-frequency power supplier 129, further passes through the dielectric window 122, and is radiated to the plasma processing chamber 123. The high-density plasma of the processing gas is excited in the plasma processing chamber 123 by the energy of the radiated microwave, and the oxygen active species generated by this high-density plasma is formed on the surface of the wafer W. When the pattern is reached, the resist pattern is ashed.

  When the microwave output is continued for a predetermined time, the microwave output from the high frequency power supply 43 is stopped and the introduction of the processing gas from the gas introduction pipe 125 to the plasma processing chamber 123 is stopped. Even after the introduction of the processing gas is stopped, the exhaust apparatus 41 continues to exhaust the plasma processing chamber 123 in order to remove the processing gas remaining in the plasma processing chamber 123 (residual gas). Thereafter, when the plasma processing chamber 123 is almost in a vacuum state, the gas introduction device 42 is controlled, and nitrogen gas is introduced from the gas introduction pipe 125 into the plasma processing chamber 123. When the atmospheric pressure in the plasma processing chamber 123 rises to normal pressure, the introduction of nitrogen gas into the plasma processing chamber 123 is stopped, and the wafer W removed until the resist pattern has a predetermined film thickness is removed from the plasma ashing unit 12. It is carried out from.

The wafer W unloaded from the plasma ashing unit 12 is loaded again into one of the two chemical solution cleaning units 13 by the substrate transfer robot 11. In the chemical solution cleaning unit 13, a cleaning process for completely removing the resist pattern having a predetermined film thickness on the wafer W to clean the surface of the wafer W is performed.
Specifically, referring to FIG. 3, wafer W loaded into chemical solution cleaning unit 13 is transferred to spin chuck 132 and rotated at a predetermined rotation speed by spin chuck 132. Further, the two-fluid spray nozzle 133 is disposed at a processing start position set above the wafer W held by the spin chuck 132 from a standby position set outside the cup 134. Then, SPM and high-pressure nitrogen gas are supplied to the two-fluid spray nozzle 133, and a jet of SPM droplets is discharged from the two-fluid spray nozzle 133. On the other hand, the supply position (SPM supply position) on the surface of the wafer W from which the jet of droplets from the two-fluid spray nozzle 133 is guided by the swing of the nozzle arm 136 is changed from the rotation center of the wafer W to the wafer W. It moves while drawing an arc-shaped trajectory within the range reaching the periphery. Thereby, a jet of SPM droplets is supplied to the entire surface of the wafer W, and the strong oxidation force of the SPM and the impact when the jet of SPM droplets collide with the surface of the wafer W cause The resist pattern remaining on the surface is removed.

  When the reciprocating scan of the SPM supply position is performed a predetermined number of times, the supply of SPM to the wafer W is stopped and the two-fluid spray nozzle 133 is returned to the standby position set outside the cup 134. Thereafter, DIW (deionized pure water) is supplied to the surface of the wafer W, and SPM adhering to the surface of the wafer W is washed away by the DIW. When the supply of DIW is continued for a certain period of time, the supply of DIW is stopped, and then the rotation drive mechanism 51 is controlled to rotate the wafer W at a high rotation speed (for example, 3000 rpm) and adhere to the wafer W. A process (spin-drying process) is performed in which the DIW being shaken off by centrifugal force is dried. When this process is completed, the rotation drive mechanism 51 is controlled to stop the rotation of the wafer W by the spin chuck 132, and then the processed wafer W is unloaded from the chemical solution cleaning unit 13 (chemical solution processing chamber 131). . The wafer W carried out from the chemical solution cleaning unit 13 is transferred from the substrate transfer robot 11 to the indexer robot 21 and stored in the cassette C by the indexer robot 21.

  As described above, according to this embodiment, the hard layer formed on the surface of the resist pattern by the ion implantation is softened prior to the ashing process by the plasma ashing unit 12. By irradiating plasma containing active species of fluorine for a very short time, the resist pattern can be removed from the surface of the wafer W to a predetermined thickness. Then, the resist pattern (resist residue) remaining on the surface of the wafer W can be removed by performing a cleaning process by the chemical cleaning unit 13 thereafter. Therefore, the resist pattern on the surface of the wafer W can be satisfactorily removed without damaging the portion of the wafer surface not covered with the resist film (for example, the exposed oxide film) by the active species of fluorine.

  FIG. 5 is a diagram for explaining another embodiment of the present invention. In this embodiment, for example, in the substrate processing apparatus shown in FIG. 1, instead of one of the plasma ashing unit 12 or the chemical solution cleaning unit 13 or in addition to the periphery of the substrate transfer robot 11, the wafer W is abrupt. A resist surface modification processing unit 6 is further provided for modifying the hard layer Rh formed on the surface of the resist pattern R by applying a temperature change.

  The resist surface modification processing unit 6 is provided with a wafer stage 61 for mounting and holding the wafer W. A heater 62 for heating the wafer W placed on the wafer stage 61 is built in the wafer stage 61. Further, a cooling water nozzle 63 for supplying cooling water (for example, DIW of about room temperature (about 25 ° C.)) to the surface of the wafer W placed on the wafer stage 61 is disposed above the wafer stage 61. Has been.

  The wafer W carried into the resist surface modification processing unit 6 is placed on the wafer stage 61 with the surface thereof facing upward. First, the heat generated from the heater 62 causes a predetermined temperature (for example, 150 to 200). ° C). When a sufficient time has elapsed for the temperature of the wafer W to reach the predetermined temperature, heating by the heater 62 is stopped, and immediately after that, cooling water is supplied from the cooling water nozzle 63 to the surface of the wafer W. As a result, the hard layer Rh that has been thermally expanded by being heated to a predetermined temperature or more suddenly undergoes thermal contraction, and cracks are generated in the hard layer Rh due to this rapid change.

  The wafer W that has cracked the hard layer Rh in this manner is transferred from the resist surface modification processing unit 6 to the plasma ashing unit 12 and is subjected to an ashing process by the plasma ashing unit 12. Since cracks are generated in the hard layer Rh, in the ashing process, active species of oxygen and fluorine enter the hard layer Rh from the cracks. As a result, the resist pattern can be removed from the surface of the wafer W to a predetermined film thickness by a very short ashing process. Then, the resist pattern remaining on the surface of the wafer W can be removed by performing a cleaning process by the chemical solution cleaning unit 13 thereafter. Therefore, according to this embodiment as well, the resist pattern on the surface of the wafer W can be satisfactorily removed without the portion of the wafer surface not covered with the resist film being damaged by the active species of fluorine.

  Since the wafer stage 127 provided in the plasma ashing unit 12 also includes a heater 128 (see FIG. 2), by providing the cooling water nozzle 63 in the plasma processing chamber 123 of the plasma ashing unit 12, plasma is generated. The resist surface modification process as described above can also be achieved by the ashing portion 12. In this case, the plasma ashing unit 12 also has the function of the resist surface modification processing unit.

The means for heating the wafer W is not limited to the heater 62 built in the wafer stage 61, and may be a lamp heat source such as a halogen lamp or an infrared lamp disposed above the wafer stage 61. In this case, it is preferable to employ a lamp that irradiates light having the highest heat absorption rate with respect to the color of the resist R as the lamp heat source.
FIG. 6 is a view for explaining still another embodiment of the present invention. In this embodiment, the chemical cleaning unit 13 (chemical processing chamber 131) is provided with a stamp member 71 for increasing the surface roughness of the hard layer Rh formed on the surface of the resist pattern R on the wafer W. .

  The stamp member 71 is formed in a circular flat plate shape that is substantially the same size as the wafer W, and is substantially parallel to the wafer W held by the spin chuck 132 above the spin chuck 132 (not shown in FIG. 6). It is arranged in the state that made. The lower surface of the stamp member 71, that is, the surface 711 facing the wafer W is formed into a rough surface having fine unevenness like sandpaper. Further, the stamp member 71 is connected to a lifting drive mechanism 72 for lifting the stamp member 71 so that the rough surface 711 of the stamp member 71 is brought into contact with the surface of the wafer W or the wafer W It can be separated from the surface.

  The wafer W carried into the chemical solution cleaning unit 13 having such a configuration is held by the spin chuck 132 with its surface facing upward. At this time, the stamp member 71 is largely retracted above the spin chuck 132 so as not to hinder the loading of the wafer W. When the wafer W is held by the spin chuck 132, the stamp driving member 72 is lowered by the action of the lifting drive mechanism 72, and the rough surface 711 of the stamp member 71 is pressed against the surface of the wafer W. Since the resist pattern R is formed on the outermost surface of the wafer W, as a result, the rough surface 711 of the stamp member 71 is pressed against the surface of the resist pattern R. Thereby, in the hard layer Rh on the surface of the resist pattern R, irregularities corresponding to the fine irregularities of the rough surface 711 are formed.

  The wafer W having the resist pattern R (hard layer Rh) whose surface roughness is increased by forming fine irregularities is transferred from the chemical solution cleaning unit 13 to the plasma ashing unit 12, and an ashing process by the plasma ashing unit 12 is performed. Receive. Since the surface area of the hard layer Rh is increased due to the increase in the surface roughness of the hard layer Rh, in the ashing process, when the surface roughness of the hard layer Rh is small (the surface of the hard layer Rh has fine irregularities). Compared with the case where it is not formed, the reaction rate increases due to an increase in the contact area between the hard layer Rh and the oxygen active species. As a result, the speed of the ashing process is increased, so that the resist pattern can be removed from the surface of the wafer W to a predetermined film thickness with a very short ashing process. Then, the resist pattern remaining on the surface of the wafer W can be removed by performing a cleaning process by the chemical solution cleaning unit 13 thereafter. Therefore, according to this embodiment as well, the resist pattern on the surface of the wafer W can be satisfactorily removed without the portion of the wafer surface not covered with the resist film being damaged by the active species of fluorine.

When the chemical cleaning unit 13 is provided with a blocking plate that is disposed opposite to the position close to the surface of the wafer W at the time of spin dry processing or the like, by making the lower surface of the blocking plate rough, A blocking plate can be used as the stamp member.
In this embodiment, the chemical cleaning unit 13 has the function of the resist surface modification processing unit. However, the resist surface modification processing unit having the stamp member 71 is the same as the chemical cleaning unit 13 in the substrate processing apparatus. It may be provided separately.

  Furthermore, in place of the stamp member 71, a roller member having a rough peripheral surface is provided, and the surface of the resist pattern R on the wafer W is rolled by rolling the roller member on the surface of the wafer W. The roughness may be increased. Further, a needle-like member may be provided in place of the stamp member 71, and the surface roughness of the resist pattern R may be increased by damaging the surface of the resist pattern R on the wafer W with this needle-like member. .

As mentioned above, although several embodiment of this invention was described, this invention can also be implemented with another form. For example, the chemical solution cleaning unit 13 uses SPM, but is not limited to SPM, but other types such as APM (ammonia-hydrogen peroxide mixture) or HF / O ₃ (fluoric acid ozone). May be used.
In addition, the processing gas used in the plasma ashing unit 12 is not necessarily mixed with the fluorine-containing gas, and the processing gas only needs to contain at least oxygen (atom).

  Further, the substrate to be processed is not limited to the wafer W in which the impurity is locally implanted on the surface by irradiating the surface of the resist pattern with the impurity ions, and the resist pattern is formed. It may be a wafer W in which the thin film is selectively etched by supplying an etching solution onto a thin film such as an oxide film, and the type of the substrate is also a glass substrate for a liquid crystal display device, a glass for a plasma display panel. Other types of substrates such as a substrate, a glass substrate for a photomask, and a magnetic / optical disk substrate may be used.

  In addition, various design changes can be made within the scope of the matters described in the claims.

It is the simplified top view which shows the layout of the substrate processing apparatus which concerns on one Embodiment of this invention. It is an illustration sectional view for explaining the composition of a plasma ashing part. It is an illustration sectional view for explaining the composition of a chemical solution washing part. It is a conceptual diagram for demonstrating operation | movement of said substrate processing apparatus. It is a figure for demonstrating other embodiment of this invention. It is a figure for demonstrating other embodiment of this invention. This implementation

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate processing part 6 Resist surface modification processing part 11 Substrate transfer robot 12 Plasma ashing part 13 Chemical solution washing part 21 Indexer robot 61 Wafer stage 62 Heater 63 Cooling water nozzle 71 Stamp member 72 Lifting drive mechanism 133 Two-fluid spray nozzle 711 Rough surface R resist pattern Rh hard layer W wafer

Claims (11)

A resist surface modification processing section for performing a process for modifying the surface of the resist formed on the substrate;
An ashing treatment unit for performing a treatment for ashing and removing the resist whose surface has been modified by the treatment in the resist surface modification treatment unit;
Look including a substrate transfer mechanism for transporting the substrates to the resist surface modification treatment unit and the ashing unit,
The resist surface modification processing unit includes a substrate heating unit for heating the substrate and a substrate cooling unit for cooling the substrate .   2. The substrate processing apparatus according to claim 1, wherein the resist surface modification processing unit performs a process for modifying a hardened layer formed on the resist surface by ion implantation into the substrate.   3. The substrate processing according to claim 1, wherein the resist surface modification processing unit includes sulfuric acid / hydrogen peroxide supply means for supplying a mixed solution of sulfuric acid and hydrogen peroxide solution onto the substrate. apparatus. The resist surface modification processing unit further includes a substrate mounting table for mounting the substrate,
The substrate heating means is built in the substrate mounting table,
It said substrate cooling means, the substrate processing apparatus according to any one of claims 1 to 3, characterized in that to supply the cooling water to the substrate placed on the substrate mounting table. The resist surface modification treatment unit is a substrate processing apparatus according to any one of claims 1 to 4, characterized in that it comprises a roughness increase means for increasing the surface roughness of the resist on the substrate. The roughness increasing means includes a stamp member having a rough surface disposed opposite to the substrate, and a contact / separation mechanism for bringing the stamp member into and out of contact with the resist surface on the substrate. The substrate processing apparatus according to claim 5 . The substrate processing apparatus according to any one of claims 1 to 6, further comprising a cleaning unit for cleaning a substrate processing in the ashing unit has been performed. A resist surface modification process for modifying a cured layer formed on the surface of the resist on the substrate by ion implantation into the substrate;
The resist surface modifying step in the surface viewed contains a ashing step for removing by ashing the modified resist,
The resist surface modifying step, a substrate processing method comprising including Mukoto temperature change step of providing a temperature change on the substrate by continuously performing the heating and cooling of the substrate in a predetermined order. 9. The substrate processing method according to claim 8, wherein the resist surface modification step includes a sulfuric acid / hydrogen peroxide supply step of supplying a mixed solution of sulfuric acid and hydrogen peroxide solution onto the substrate. 10. The substrate processing method according to claim 8, wherein the resist surface modification step includes a stamping step of pressing a rough surface against the surface of the resist formed on the substrate. After said ashing step, a substrate processing method according to any one of claims 8 to 10, further comprising a cleaning process for cleaning a substrate processing in the ashing process is performed .

Images