JPH07175223A - Substrate developing device - Google Patents

Substrate developing device

Info

Publication number
JPH07175223A
JPH07175223A JP32242093A JP32242093A JPH07175223A JP H07175223 A JPH07175223 A JP H07175223A JP 32242093 A JP32242093 A JP 32242093A JP 32242093 A JP32242093 A JP 32242093A JP H07175223 A JPH07175223 A JP H07175223A
Authority
JP
Japan
Prior art keywords
substrate
developing
cleaning
drying
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32242093A
Other languages
Japanese (ja)
Inventor
Izuru Izeki
出 井関
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP32242093A priority Critical patent/JPH07175223A/en
Publication of JPH07175223A publication Critical patent/JPH07175223A/en
Pending legal-status Critical Current

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  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To reduce the device setting area and to facilitate the fractional recovery of the processing soln. CONSTITUTION:The substrate developing device 1 is provided with a substrate developing part 2, a substrate cleaning and drying part 3 and a substrate conveying part 4. The substrate developing part 2 has a developing chamber 5 and a part 6 for supplying a developer to the substrate P in the chamber 5. The substrate cleaning and drying part 3 is provided in parallel with the substrate developing part 2 and has a cleaning and drying chamber 30 and a processing part 31 for cleaning and drying the developed substrate P in the chamber 30. The substrate P developed in the developing part 2 is conveyed by the conveying part 4 to the substrate cleaning and drying part.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、現像装置、特に、基板
を現像液で現像処理した後に洗浄及び乾燥処理を行う基
板現像装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a developing device, and more particularly, to a substrate developing device for cleaning and drying a substrate after developing it with a developing solution.

【0002】[0002]

【従来の技術及びその課題】たとえば、半導体や液晶表
示装置の製造工程では、基板に対する現像処理が繰り返
して行われる。一連の現像処理には、基板への現像液の
塗布、基板からの現像液の洗浄及び基板の乾燥が含まれ
る。この種の基板現像装置として、実開平5−4571
2号公報に開示されたものが知られている。この基板現
像装置では、3つのチャンバーが(現像室と洗浄室と乾
燥室)1列に配置され、それらの内部に搬送用の搬送ロ
ーラが配置されている。この基板現像装置では、まず基
板を現像室内に配置し、現像液中に浸漬することで基板
表面に現像液を供給して現像処理を行う。次に、基板を
洗浄室内に搬入し、洗浄液によって基板表面に付着した
現像液を洗浄する。最後に、基板を乾燥室内に搬入し、
エアナイフにより基板に付着した洗浄液を吹き飛ばして
乾燥処理を行う。
2. Description of the Related Art For example, in a manufacturing process of a semiconductor or a liquid crystal display device, a substrate is repeatedly developed. The series of development processing includes applying a developing solution to the substrate, cleaning the developing solution from the substrate, and drying the substrate. As a substrate developing device of this type, an actual flat plate 5-4571 is used.
The one disclosed in Japanese Patent Publication No. 2 is known. In this substrate developing apparatus, three chambers (developing chamber, cleaning chamber, and drying chamber) are arranged in one row, and a conveying roller for conveying is arranged inside them. In this substrate developing apparatus, first, a substrate is placed in a developing chamber and immersed in a developing solution to supply the developing solution to the surface of the substrate to perform a developing process. Next, the substrate is carried into the cleaning chamber, and the developer attached to the surface of the substrate is washed with the cleaning liquid. Finally, bring the substrate into the drying chamber,
The cleaning solution adhering to the substrate is blown off by an air knife to perform a drying process.

【0003】しかし、前記従来の構成では、現像室、洗
浄室及び乾燥室のそれぞれ独立した3つのチャンバーが
必要となるので、装置の設置面積が大きくなるという問
題がある。一方、1つのチャンバー内で、現像、洗浄及
び乾燥の3つの処理を行う装置が、特開平5−1332
0号公報、特開平5−55133号公報及び特開平5−
15805号公報に開示されている。この基板現像装置
では、スピンカップ内に基板を真空吸着する回転型の基
板保持部が設けられるとともに、基板表面に現像液を供
給する現像液供給ノズルとリンス液を供給するリンス液
供給ノズルとがスピンカップ内に設けられている。この
基板洗浄装置は、現像処理時には、現像液供給ノズルを
基板表面に対向して配置し、基板を回転させながら現像
液を供給する。また洗浄処理時には、現像液供給ノズル
を退避させ、リンス液供給ノズルを基板表面に対向させ
てリンス液を供給する。乾燥処理時には、基板保持部を
高速回転させて基板に付着したリンス液を除去する。
However, the conventional structure requires three independent chambers, that is, the developing chamber, the cleaning chamber and the drying chamber, which causes a problem that the installation area of the apparatus becomes large. On the other hand, an apparatus for performing three processes of developing, cleaning and drying in one chamber is disclosed in Japanese Patent Laid-Open No. 5-1332.
No. 0, JP-A-5-55133 and JP-A-5-55133.
It is disclosed in Japanese Patent No. 15805. In this substrate developing device, a rotary type substrate holder for vacuum-adsorbing the substrate is provided in the spin cup, and a developing solution supply nozzle for supplying a developing solution and a rinsing solution supply nozzle for supplying a rinsing solution are provided on the substrate surface. It is provided in the spin cup. In the substrate cleaning apparatus, the developing solution supply nozzle is arranged to face the surface of the substrate during the developing process, and the developing solution is supplied while rotating the substrate. During the cleaning process, the developing solution supply nozzle is retracted, and the rinse solution supply nozzle is opposed to the substrate surface to supply the rinse solution. During the drying process, the substrate holder is rotated at a high speed to remove the rinse liquid adhering to the substrate.

【0004】しかし、この構成では、1つのチャンバー
内で現像液と洗浄液との両方が連続して基板に供給され
るので、現像液と洗浄液とを別々に回収しにくい。この
ため現像液を再利用するためには複雑な構造が必要にな
る。本発明の目的は、小さな装置設置面積とし、しかも
処理液の分別回収を用意に行えるようにすることにあ
る。
However, in this structure, since both the developing solution and the cleaning solution are continuously supplied to the substrate in one chamber, it is difficult to separately collect the developing solution and the cleaning solution. Therefore, a complicated structure is required to reuse the developer. An object of the present invention is to reduce the installation area of the apparatus and to facilitate the separation and collection of the processing liquid.

【0005】[0005]

【課題を解決するための手段】本発明に係る基板現像装
置は、互いに独立したチャンバー内に配置され、それぞ
れ基板を保持する第1及び第2の基板保持手段と、第1
の基板保持手段に保持された基板に現像液を供給する現
像液供給手段と、基板に現像液が供給された後に、該基
板を第1の基板保持手段から第2の基板保持手段に搬送
する搬送手段と、第2の基板保持手段に保持された基板
に洗浄液を供給する洗浄液供給手段と、基板に洗浄液が
供給された後に、該基板を第2の基板保持手段に保持さ
せつつ乾燥させる乾燥手段とを備えている。
A substrate developing apparatus according to the present invention is arranged in chambers independent of each other, and first and second substrate holding means for holding a substrate, respectively.
Developing solution supply means for supplying a developing solution to the substrate held by the substrate holding means, and after the developing solution is supplied to the substrate, the substrate is conveyed from the first substrate holding means to the second substrate holding means. A transporting means, a cleaning liquid supplying means for supplying a cleaning liquid to the substrate held by the second substrate holding means, and a drying process in which the substrate is held and dried by the second substrate holding means after the cleaning liquid is supplied to the substrate. And means.

【0006】[0006]

【作用】本発明に係る基板現像装置では、第1の基板保
持手段に保持された基板に現像液を供給し、現像処理を
行う。現像処理が終了した基板は、搬送手段により第1
の基板保持手段から第2の基板保持手段に搬送される。
そして、第2の基板保持手段に保持された基板に洗浄液
を供給し、洗浄処理を行う。洗浄処理が終了した基板
は、乾燥手段により第2の基板保持手段に保持されつつ
乾燥される。
In the substrate developing apparatus according to the present invention, the developing solution is supplied to the substrate held by the first substrate holding means to perform the developing process. The substrate on which the development processing has been completed is first transferred by the transfer means.
The substrate holding means is transported to the second substrate holding means.
Then, the cleaning liquid is supplied to the substrate held by the second substrate holding means to perform the cleaning process. The substrate for which the cleaning process has been completed is dried while being held by the second substrate holding means by the drying means.

【0007】ここでは、現像処理を行う基板保持手段
と、洗浄処理と乾燥処理を行う基板保持手段がそれぞれ
独立したチャンバー内に配置されているので、現像液と
洗浄液とを容易に別々に回収できる。しかも、装置が2
つのチャンバーで構成されているので、装置の設置面積
は小さい。
Here, since the substrate holding means for performing the developing process and the substrate holding means for performing the cleaning process and the drying process are arranged in independent chambers, respectively, the developing solution and the cleaning solution can be easily collected separately. . Moreover, the device is 2
Since it is composed of two chambers, the installation area of the device is small.

【0008】[0008]

【実施例】図1において、本発明の一実施例による基板
現像装置1は、フォトレジスト液が塗布された露光済の
角型基板(以下、単に基板という)Pを現像する基板現
像部2と、基板現像部2に並設配置された基板洗浄・乾
燥部3と、基板現像部2から基板洗浄・乾燥部3へ基板
Pを搬送する基板搬送部4とを主として有している。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to FIG. 1, a substrate developing apparatus 1 according to an embodiment of the present invention comprises a substrate developing section 2 for developing an exposed rectangular substrate (hereinafter simply referred to as substrate) P coated with a photoresist solution. Mainly includes a substrate cleaning / drying unit 3 arranged side by side in the substrate developing unit 2 and a substrate transporting unit 4 for transporting the substrate P from the substrate developing unit 2 to the substrate cleaning / drying unit 3.

【0009】基板現像部2は、箱形の現像チャンバー5
と、現像チャンバー5内に配置された現像液供給部6
と、現像処理された基板Pから現像液を取り除く現像液
除去部7とを有している。現像チャンバー5の図1の左
右の両側壁には、挿入口10及び連通口11が形成され
ている。挿入口10には入側シャッター12が、連通口
11には中間シャッター13が、それぞれ開閉可能に設
けられている。現像チャンバー5の底面には、排液口1
4が形成されている。排液口14は、現像液回収弁15
を介して現像液供給源16に接続されている。また、現
像チャンバー5内には、基板搬送部4を構成する複数の
現像ローラ17が水平方向に並べて配置されている。現
像ローラ17の回転軸は、搬送方向(図1の左右方向)
と直交する方向に配置されており、図示しない駆動源よ
り回転駆動される。
The substrate developing section 2 comprises a box-shaped developing chamber 5
And a developer supply unit 6 arranged in the developing chamber 5.
And a developing solution removing section 7 for removing the developing solution from the developed substrate P. An insertion port 10 and a communication port 11 are formed on both left and right side walls of the developing chamber 5 in FIG. An insertion side shutter 12 is provided at the insertion opening 10 and an intermediate shutter 13 is provided at the communication opening 11 so as to be opened and closed. On the bottom surface of the developing chamber 5, a drainage port 1
4 are formed. The drainage port 14 has a developer recovery valve 15
It is connected to the developing solution supply source 16 via. Further, in the developing chamber 5, a plurality of developing rollers 17 constituting the substrate transporting section 4 are arranged side by side in the horizontal direction. The rotation axis of the developing roller 17 is in the transport direction (left and right direction in FIG. 1).
It is arranged in a direction orthogonal to and is rotationally driven by a drive source (not shown).

【0010】現像液供給部6は、現像液吐出ノズル20
を有している。現像液吐出ノズル20は、基板Pの表面
に向けて現像液を吐出するように配置されており、基板
Pの搬送方向と直交する方向に長いスリットノズルを有
している。現像液吐出ノズル20は、現像液供給弁21
を介して現像液供給源16に接続されている。現像液供
給源16は、新鮮な現像液が適宜補充され得る現像液貯
溜槽と循環ポンプ(共に図示せず)とを有しており、排
液口14から回収された現像液も現像液供給源16によ
り現像液吐出ノズル20に再供給されるようになってい
る。
The developing solution supply section 6 includes a developing solution discharge nozzle 20.
have. The developing solution discharge nozzle 20 is arranged so as to discharge the developing solution toward the surface of the substrate P, and has a slit nozzle long in the direction orthogonal to the transport direction of the substrate P. The developing solution discharge nozzle 20 has a developing solution supply valve 21.
It is connected to the developing solution supply source 16 via. The developer supply source 16 has a developer reservoir tank and a circulation pump (both not shown) in which fresh developer can be appropriately replenished, and the developer collected from the drain port 14 is also supplied to the developer. It is adapted to be re-supplied to the developing solution discharge nozzle 20 by the source 16.

【0011】現像液除去部7は、基板Pのパスラインを
挟んで上下に対向配置された窒素ガスノズル22,23
を有している。また、窒素ガスノズル22,23は、そ
れぞれ基板Pの表面及び裏面に前方に向けて窒素ガスを
噴出し得るように配置されている。窒素ガスノズル2
2,23は、それぞれ窒素ガス供給弁24,25を介し
て図示しない窒素ガス源に接続されている。
The developing solution removing section 7 has nitrogen gas nozzles 22 and 23 vertically opposed to each other with a pass line of the substrate P interposed therebetween.
have. Further, the nitrogen gas nozzles 22 and 23 are arranged so as to eject the nitrogen gas toward the front surface and the back surface of the substrate P, respectively. Nitrogen gas nozzle 2
2 and 23 are connected to a nitrogen gas source (not shown) via nitrogen gas supply valves 24 and 25, respectively.

【0012】基板洗浄・乾燥部3は、洗浄・乾燥チャン
バー30と、洗浄・乾燥チャンバー30内に配置された
洗浄・乾燥処理部31とを有している。洗浄・乾燥チャ
ンバー30は、図1左右側の側壁が現像チャンバー5の
図1右側の側壁と共通である。また出側(図1右側)の
側壁には、排出口32が形成されている。排出口32に
は、開閉可能な出側シャッター33が設けられている。
洗浄・乾燥チャンバー30の底面には、排液口34が形
成されている。排液口34は、リンス液回収弁35を介
して図示しないリンス液回収部に接続されている。ま
た、洗浄・乾燥チャンバー30内には、基板搬送部4を
構成する複数の洗浄ローラ36が図1の左右方向に並べ
て配置されている。
The substrate cleaning / drying unit 3 has a cleaning / drying chamber 30 and a cleaning / drying processing unit 31 arranged in the cleaning / drying chamber 30. The side walls of the cleaning / drying chamber 30 on the left and right sides of FIG. 1 are common to the side walls of the developing chamber 5 on the right side of FIG. 1. A discharge port 32 is formed on the side wall on the outlet side (right side in FIG. 1). The discharge port 32 is provided with an outlet shutter 33 that can be opened and closed.
A drain port 34 is formed on the bottom surface of the cleaning / drying chamber 30. The drainage port 34 is connected to a rinse liquid recovery unit (not shown) via a rinse liquid recovery valve 35. Further, in the cleaning / drying chamber 30, a plurality of cleaning rollers 36 forming the substrate transporting section 4 are arranged side by side in the left-right direction in FIG.

【0013】洗浄・乾燥処理部31は、基板Pを吸着保
持する基板保持チャック40と、基板保持チャック40
に吸着保持された基板Pにリンス液を供給するリンス液
供給部41とを有している。基板保持チャック40は、
図示しない真空源に接続された吸着口(図示せず)を有
している。この基板保持チャック40は、モータ42に
より回転可能であり、また昇降機構43により上下動可
能である。
The cleaning / drying processing section 31 includes a substrate holding chuck 40 for sucking and holding the substrate P, and a substrate holding chuck 40.
And a rinse liquid supply unit 41 for supplying a rinse liquid to the substrate P adsorbed and held on the substrate P. The substrate holding chuck 40 is
It has a suction port (not shown) connected to a vacuum source (not shown). The substrate holding chuck 40 can be rotated by a motor 42 and can be vertically moved by an elevating mechanism 43.

【0014】リンス液供給部41は、基板Pの表面にリ
ンス液を供給するための複数のノズルが並設配置された
表面リンスノズル44と、基板Pの裏面にリンス液を供
給するための裏面リンスノズル45とを有している。表
面リンスノズル44は表面リンス液供給弁46を介し
て、また裏面リンス液供給ノズル45は裏面リンス液供
給弁47を介して、図示しないリンス液供給源にそれぞ
れ接続されている。
The rinse liquid supply unit 41 has a front surface rinse nozzle 44 in which a plurality of nozzles for supplying the rinse liquid are arranged side by side on the front surface of the substrate P, and a back surface for supplying the rinse liquid to the back surface of the substrate P. And a rinse nozzle 45. The surface rinse nozzle 44 is connected to a rinse liquid supply source (not shown) via a surface rinse liquid supply valve 46, and the rear surface rinse liquid supply nozzle 45 is connected to a rinse liquid supply source (not shown).

【0015】基板現像装置1は、図2に示す現像制御部
50及び洗浄・乾燥制御部51を有している。現像制御
部50及び洗浄・乾燥制御部51は、それぞれCPU,
ROM,RAMを含むマイクロコンピュータから構成さ
れている。現像制御部50には、入側シャッター12、
中間シャッター13、現像ローラ17、現像液供給弁2
1、現像液回収弁15、窒素ガス供給弁24,25がそ
れぞれ接続されている。また現像制御部50には、現像
チャンバー5内の基板Pの搬送位置を検出するための各
種センサや他の入出力部も接続されている。
The substrate developing apparatus 1 has a developing controller 50 and a cleaning / drying controller 51 shown in FIG. The development control unit 50 and the cleaning / drying control unit 51 have a CPU,
It is composed of a microcomputer including a ROM and a RAM. The development control unit 50 includes the entrance shutter 12,
Intermediate shutter 13, developing roller 17, developer supply valve 2
1, a developer recovery valve 15, and nitrogen gas supply valves 24 and 25 are connected to each other. Further, various sensors for detecting the transfer position of the substrate P in the developing chamber 5 and other input / output units are also connected to the developing control unit 50.

【0016】洗浄・乾燥制御部51は、現像制御部50
と双方向に通信可能である。洗浄・乾燥制御部51に
は、出側シャッター33、洗浄ローラ36、モータ4
2、昇降機構43、表面リンス液供給弁46、裏面リン
ス液供給弁47及びリンス液回収弁35が接続されてい
る。また、洗浄・乾燥制御部51には、洗浄・乾燥チャ
ンバー30内の基板Pの搬送位置を検出するための各種
センサや他の入出力部も接続されている。
The cleaning / drying control unit 51 is a development control unit 50.
It can communicate with both directions. The cleaning / drying control unit 51 includes an outlet shutter 33, a cleaning roller 36, a motor 4
2, the elevating mechanism 43, the front surface rinse liquid supply valve 46, the back surface rinse liquid supply valve 47, and the rinse liquid recovery valve 35 are connected. Further, the cleaning / drying control unit 51 is also connected to various sensors for detecting the transfer position of the substrate P in the cleaning / drying chamber 30 and other input / output units.

【0017】次に、上述の実施例の動作について説明す
る。基板現像部2では、現像制御部50が図3及び図4
に示す制御を行う。まずステップS1では初期設定を行
う。ステップS2では、前段の処理工程から基板搬入指
令がなされるのを待つ。基板搬入指令がなされるとステ
ップS3に移行する。ステップS3では入側シャッター
12を開く。ステップS4では現像ローラ17の回転を
開始し、基板Pを搬入する。ステップS5では、基板P
の先端が現像液供給ノズル20の下方に到達するのを待
つ。基板Pが現像液供給ノズル20の下方に到達すると
ステップS6に移行する。ステップS6では現像液供給
弁21を開く。これにより基板P上に現像液が供給され
る。ステップS7では現像液回収弁15を開く。これに
より、吐出された現像液のうちの余剰の現像液は、現像
液供給源16に回収され、再利用される。
Next, the operation of the above embodiment will be described. In the substrate developing unit 2, the developing control unit 50 is configured as shown in FIGS.
The control shown in is performed. First, in step S1, initial setting is performed. In step S2, the process waits for a substrate loading instruction from the previous process step. When a substrate loading instruction is issued, the process proceeds to step S3. In step S3, the entrance shutter 12 is opened. In step S4, the developing roller 17 starts rotating and the substrate P is loaded. In step S5, the substrate P
It waits for the tip of to reach below the developer supply nozzle 20. When the substrate P reaches below the developing solution supply nozzle 20, the process proceeds to step S6. In step S6, the developing solution supply valve 21 is opened. As a result, the developing solution is supplied onto the substrate P. In step S7, the developer recovery valve 15 is opened. As a result, the excess developer of the discharged developer is recovered by the developer supply source 16 and reused.

【0018】ステップS8では、基板Pの後端が現像液
供給ノズル20の下方を通過するのを待つ。基板Pの後
端が現像液供給ノズル20の下方を通過すると、ステッ
プS9に移行する。ステップS9では現像液供給弁21
を閉成して現像液の供給を停止し、続くステップS10
で現像ローラ17の回転を停止する。ステップS11で
は時間Tの経過を待つ。この時間Tは、現像液が基板P
に塗布されてから現像が終了するまでに必要な時間であ
る。時間Tが経過するとステップS12に移行する。ス
テップS12では、後段の基板洗浄・乾燥部3での乾燥
処理が完了しているか否かをチェックする。これは、洗
浄・乾燥制御部51から出力される乾燥完了信号(後
述)によって判断される。乾燥処理が完了していると判
断するとステップS13に移行する。
In step S8, the process waits for the rear end of the substrate P to pass under the developer supply nozzle 20. When the rear end of the substrate P passes below the developer supply nozzle 20, the process proceeds to step S9. In step S9, the developer supply valve 21
Is closed to stop the supply of the developer, and the subsequent step S10
Then, the rotation of the developing roller 17 is stopped. In step S11, the elapse of time T is awaited. During this time T, the developing solution is applied to the substrate P.
It is the time required from the time of application to the end of development. When the time T has elapsed, the process proceeds to step S12. In step S12, it is checked whether or not the drying process in the subsequent substrate cleaning / drying unit 3 is completed. This is determined by a drying completion signal (described later) output from the cleaning / drying control unit 51. If it is determined that the drying process is completed, the process proceeds to step S13.

【0019】ステップS13では中間シャッター13を
開く。ステップS14では窒素ガス供給弁24,25を
開く。ステップS15では現像ローラ17の回転を開始
する。これによって、窒素ガスノズル22,23からの
窒素ガスが基板Pに吹き付けられ、基板Pから現像液が
除去される。ステップS16では、搬送された基板Pの
後端が中間シャッター13の下方を通過するのを待つ。
基板Pが中間シャッター13の下方を通過すると、ステ
ップS17に移行して中間シャッター13を閉じる。ス
テップS18では現像ローラ17の回転を停止する。ス
テップS19では現像液回収弁15を閉じ、ステップS
2に戻る。
In step S13, the intermediate shutter 13 is opened. In step S14, the nitrogen gas supply valves 24 and 25 are opened. In step S15, rotation of the developing roller 17 is started. As a result, the nitrogen gas from the nitrogen gas nozzles 22 and 23 is blown onto the substrate P, and the developer is removed from the substrate P. In step S16, it waits for the rear end of the transported substrate P to pass below the intermediate shutter 13.
When the substrate P passes under the intermediate shutter 13, the process proceeds to step S17 and the intermediate shutter 13 is closed. In step S18, the rotation of the developing roller 17 is stopped. In step S19, the developer recovery valve 15 is closed, and step S
Return to 2.

【0020】基板洗浄・乾燥部3では、洗浄・乾燥制御
部51が図5及び図6に示す制御を行う。ここではステ
ップP1で初期設定を行う。ステップP2では中間シャ
ッター13が開くのを待つ。中間シャッター13が開く
とステップP3に移行する。ステップP3では洗浄ロー
ラ36の回転を開始する。そしてステップP4で、搬送
された基板Pが基板保持位置に到着するのを待つ。
In the substrate cleaning / drying unit 3, the cleaning / drying control unit 51 performs the control shown in FIGS. 5 and 6. Here, initial setting is performed in step P1. In step P2, the opening of the intermediate shutter 13 is waited for. When the intermediate shutter 13 opens, the process proceeds to step P3. In step P3, the cleaning roller 36 starts rotating. Then, in step P4, it waits for the transported substrate P to arrive at the substrate holding position.

【0021】基板Pが基板保持位置に到達すると、ステ
ップP5に移行して中間シャッタ13を閉じ、ステップ
P6で洗浄ローラ36の回転を停止する。ステップP7
では、搬送された基板Pを基板保持チャック40に吸着
させる。そして、ステップP8で、昇降機構43により
基板保持チャック40を上昇させる。ステップP9では
リンス液供給弁46,47を開き、ステップP10では
リンス液回収弁35を開く。そして、ステップP11
で、モータ42を低速(たとえば30rpm)で所定時
間回転させ、基板Pを洗浄する。低速回転による洗浄動
作が終了するとステップP12に移行する。ステップP
12ではリンス液供給弁46,47をともに閉じる。こ
れにより洗浄処理が終了する。
When the substrate P reaches the substrate holding position, the process proceeds to step P5, the intermediate shutter 13 is closed, and the rotation of the cleaning roller 36 is stopped in step P6. Step P7
Then, the transported substrate P is attracted to the substrate holding chuck 40. Then, in step P8, the substrate holding chuck 40 is raised by the elevating mechanism 43. In step P9, the rinse liquid supply valves 46 and 47 are opened, and in step P10, the rinse liquid recovery valve 35 is opened. Then, Step P11
Then, the motor 42 is rotated at a low speed (for example, 30 rpm) for a predetermined time to clean the substrate P. When the cleaning operation by the low speed rotation is completed, the process proceeds to step P12. Step P
At 12, both rinse liquid supply valves 46 and 47 are closed. This completes the cleaning process.

【0022】ステップP13では、モータ42を高速
(たとえば2000rpm)で所定時間回転させ、洗浄
液を振り切って基板Pを乾燥させる。ステップP14で
は、基板保持チャック40を昇降機構43により下降さ
せる。ステップP15では、基板保持チャック40によ
る基板Pの吸着保持を解除する。ステップP16では、
洗浄ローラ36の回転を再度開始する。ステップP17
では出側シャッター33を開く。この結果、基板Pは図
1の右方向に移動して、排出口32を通過する。ステッ
プP18では、基板Pの後端が出側シャッター33の下
方を通過するのを待ち、基板Pが出側シャッター33の
下方を通過するとステップP19に移行する。ステップ
P19では、洗浄ローラ36の回転を停止する。さら
に、ステップP20で出側シャッター33を閉じ、ステ
ップP21で乾燥完了信号を現像制御部50に出力し
て、ステップP2に戻る。なお、現像制御部50ではこ
の乾燥完了信号の出力を図4のステップS12で判断す
る。
In step P13, the motor 42 is rotated at a high speed (for example, 2000 rpm) for a predetermined time to shake off the cleaning liquid to dry the substrate P. In Step P14, the substrate holding chuck 40 is lowered by the elevating mechanism 43. In Step P15, the suction holding of the substrate P by the substrate holding chuck 40 is released. In Step P16,
The rotation of the cleaning roller 36 is restarted. Step P17
Then, the exit shutter 33 is opened. As a result, the substrate P moves to the right in FIG. 1 and passes through the discharge port 32. In Step P18, the process waits for the rear end of the substrate P to pass under the exit shutter 33, and when the substrate P passes under the exit shutter 33, the process proceeds to Step P19. In Step P19, the rotation of the cleaning roller 36 is stopped. Further, the exit shutter 33 is closed in step P20, a drying completion signal is output to the development control unit 50 in step P21, and the process returns to step P2. The developing controller 50 determines the output of this drying completion signal in step S12 of FIG.

【0023】ここでは、現像処理と洗浄・乾燥処理とを
別々のチャンバー5,30内で個別に行っているので、
現像液とリンス液とを容易に別々に回収できる。また、
装置の設置面積が、現像,洗浄及び乾燥処理を別々に行
う場合に比べて3分の2程度に小さくできる。 〔他の実施例〕 (a) 図7に示すように、スピンカップ式の基板現像
部2a及び基板洗浄・乾燥部3aを採用してもよい。
Since the developing process and the cleaning / drying process are separately performed in the chambers 5 and 30 here,
The developer and rinse can be easily recovered separately. Also,
The installation area of the device can be reduced to about two-thirds as compared with the case where development, cleaning and drying processes are performed separately. Other Embodiments (a) As shown in FIG. 7, a spin cup type substrate developing section 2a and a substrate cleaning / drying section 3a may be adopted.

【0024】ここで、基板現像部2aは、スピンカップ
5aと基板保持部40aと回転駆動用モータ42aとを
有している。また、基板洗浄・乾燥部3aは、基板現像
部2aに並設され、スピンカップ30aと基板保持部4
0と回転駆動用モータ42とを有している。基板現像部
2aと基板洗浄・乾燥部3aとの間には、基板Pを搬送
するための基板搬送ロボット4aが配置されている。 (b) 基板現像処理時間が洗浄・乾燥処理時間に比べ
て長い場合には、図8に示すように、基板洗浄・乾燥部
3を挟んでその両側に基板現像部2b,2cを設ける構
成としてもよい。
Here, the substrate developing section 2a has a spin cup 5a, a substrate holding section 40a, and a rotation driving motor 42a. The substrate cleaning / drying unit 3a is provided in parallel with the substrate developing unit 2a, and the spin cup 30a and the substrate holding unit 4 are provided.
0 and a rotation drive motor 42. A substrate transfer robot 4a for transferring the substrate P is arranged between the substrate developing unit 2a and the substrate cleaning / drying unit 3a. (B) When the substrate development processing time is longer than the cleaning / drying processing time, as shown in FIG. 8, the substrate cleaning / drying section 3 is sandwiched between the substrate developing sections 2b and 2c. Good.

【0025】ここでは、現像処理が終了した基板Pを交
互に洗浄・乾燥処理部3に搬送して洗浄・乾燥処理し、
洗浄・乾燥処理が終了した基板を上方または搬送方向と
直交する方向に排出する。この場合には、従来、6チャ
ンバーで行われている現像、洗浄、乾燥処理を3チャン
バーで行うことができ、さらに装置の設置面積を小さく
できる。 (c) 角型基板を現像する構成に代えて円形基板を現
像する構成にも本発明を適用できる。
Here, the substrates P which have undergone the development processing are alternately conveyed to the cleaning / drying processing section 3 for cleaning / drying processing,
The substrate for which the cleaning / drying process has been completed is discharged upward or in a direction orthogonal to the transport direction. In this case, the development, washing and drying processes conventionally performed in 6 chambers can be performed in 3 chambers, and the installation area of the device can be further reduced. (C) The present invention can be applied to a structure for developing a circular substrate instead of the structure for developing a rectangular substrate.

【0026】[0026]

【発明の効果】本発明に係る基板現像装置では、基板現
像部と基板の洗浄・乾燥部とが並設されているので、装
置の設置面積が小さく、しかも現像液と洗浄液とを別々
に回収して容易に再利用できる。
In the substrate developing apparatus according to the present invention, since the substrate developing section and the substrate cleaning / drying section are arranged in parallel, the installation area of the apparatus is small, and the developing solution and the cleaning solution are collected separately. And can be reused easily.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例による基板現像装置の縦断面
概略図。
FIG. 1 is a schematic vertical sectional view of a substrate developing apparatus according to an embodiment of the present invention.

【図2】その制御系のブロック図。FIG. 2 is a block diagram of its control system.

【図3】現像制御部の制御フローチャート。FIG. 3 is a control flowchart of a development control unit.

【図4】現像制御部の制御フローチャート。FIG. 4 is a control flowchart of a development control unit.

【図5】洗浄・乾燥制御部の制御フローチャート。FIG. 5 is a control flowchart of a cleaning / drying control unit.

【図6】洗浄・乾燥制御部の制御フローチャート。FIG. 6 is a control flowchart of a cleaning / drying control unit.

【図7】他の実施例の図1に相当する図。FIG. 7 is a view corresponding to FIG. 1 of another embodiment.

【図8】さらに他の実施例の図1に相当する図。FIG. 8 is a view corresponding to FIG. 1 of still another embodiment.

【符号の説明】[Explanation of symbols]

1 基板現像装置 2,2a,2b,2c 基板現像部 3,3a 基板洗浄・乾燥部 5, 現像チャンバー 5a スピンカップ 6 現像液供給部 30 洗浄・乾燥チャンバー 30a スピンカップ 31 洗浄・乾燥処理部 1 substrate developing device 2, 2a, 2b, 2c substrate developing part 3, 3a substrate cleaning / drying part 5, developing chamber 5a spin cup 6 developing solution supply part 30 cleaning / drying chamber 30a spin cup 31 cleaning / drying processing part

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】基板に現像液を供給して現像処理した後に
該基板に洗浄液を供給して基板を洗浄し乾燥させる基板
現像装置において、 互いに独立したチャンバー内に配置され、それぞれ基板
を保持する第1及び第2の基板保持手段と、 第1の基板保持手段に保持された基板に現像液を供給す
る現像液供給手段と、 基板に現像液が供給された後に、該基板を第1の基板保
持手段から第2の基板保持手段に搬送する搬送手段と、 第2の基板保持手段に保持された基板に洗浄液を供給す
る洗浄液供給手段と、 基板に洗浄液が供給された後に、該基板を第2の基板保
持手段に保持させつつ乾燥させる乾燥手段と、を備えた
基板現像装置。
1. A substrate developing apparatus for supplying a developing solution to a substrate to perform development processing, and then supplying a cleaning solution to the substrate to clean and dry the substrate, which are arranged in chambers independent of each other and hold the respective substrates. First and second substrate holding means, a developing solution supply means for supplying a developing solution to the substrate held by the first substrate holding means, and the developing solution is supplied to the substrate, and then the first substrate A transport unit that transports the substrate from the substrate holding unit to the second substrate holding unit, a cleaning liquid supply unit that supplies a cleaning liquid to the substrate held by the second substrate holding unit, and a substrate after the cleaning liquid is supplied to the substrate. A substrate developing device comprising: a drying unit that dries while holding the second substrate holding unit.
JP32242093A 1993-12-21 1993-12-21 Substrate developing device Pending JPH07175223A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32242093A JPH07175223A (en) 1993-12-21 1993-12-21 Substrate developing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32242093A JPH07175223A (en) 1993-12-21 1993-12-21 Substrate developing device

Publications (1)

Publication Number Publication Date
JPH07175223A true JPH07175223A (en) 1995-07-14

Family

ID=18143469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32242093A Pending JPH07175223A (en) 1993-12-21 1993-12-21 Substrate developing device

Country Status (1)

Country Link
JP (1) JPH07175223A (en)

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