JPH0715962B2 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0715962B2
JPH0715962B2 JP62216852A JP21685287A JPH0715962B2 JP H0715962 B2 JPH0715962 B2 JP H0715962B2 JP 62216852 A JP62216852 A JP 62216852A JP 21685287 A JP21685287 A JP 21685287A JP H0715962 B2 JPH0715962 B2 JP H0715962B2
Authority
JP
Japan
Prior art keywords
semiconductor element
semiconductor device
radiator
circuit board
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62216852A
Other languages
Japanese (ja)
Other versions
JPS6459842A (en
Inventor
賢造 畑田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62216852A priority Critical patent/JPH0715962B2/en
Publication of JPS6459842A publication Critical patent/JPS6459842A/en
Publication of JPH0715962B2 publication Critical patent/JPH0715962B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

【発明の詳細な説明】 産業上の利用分野 本発明は半導体素子の放熱に関するもので、効率の良い
放熱体を有した半導体装置を提供するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to heat dissipation of a semiconductor element, and provides a semiconductor device having an efficient heat radiator.

従来の技術 半導体素子は微細加工技術が進展し、一定面積に沢山の
素子を形成し、大容量の機能素子を有した半導体装置が
開発されてきている。これらの半導体装置は容量が増加
すればする程、一定面積における発撚量は大きくなり、
この発熱対策のために放熱機器が必要となってくる。
2. Description of the Related Art As for semiconductor elements, fine processing technology has advanced, and a large number of elements are formed in a certain area, and a semiconductor device having a large-capacity functional element has been developed. As the capacity of these semiconductor devices increases, the twisting amount in a certain area increases,
A heat dissipating device is required to counter this heat generation.

第4図は一般的な放熱器を有した半導体装置である。こ
の従来例は半導体素子1はセラミック等の容器2にダイ
オードボンディングおよびワイヤボンディングされ、前
記容器2の裏面に放熱器3を設けた構成である。そし
て、回路基板4に前記半導体素子1を搭載した容器2が
水平になる様にしてネジ5で固定するものである。すな
わち半導体素子の裏面方向のみから放熱を行なわしめる
構成である。
FIG. 4 shows a semiconductor device having a general radiator. In this conventional example, the semiconductor element 1 is diode-bonded and wire-bonded to a container 2 made of ceramic or the like, and a radiator 3 is provided on the back surface of the container 2. Then, the container 2 having the semiconductor element 1 mounted on the circuit board 4 is fixed by screws 5 so that the container 2 becomes horizontal. That is, the structure is such that heat is dissipated only from the rear surface direction of the semiconductor element.

発明が解決しようとする問題点 しかし、そのために、ある一定量の放電しか期待でき
ず、放熱器の形状を大きくしたり、自然空冷ではなく、
水冷方式に変更せざるを得ないものであった。このため
に、半導体装置を搭載した機器は、いたずらに大型化
し、実装コストも著じるしく高価なものになってしまっ
た。
Problems to be Solved by the Invention However, for that reason, only a certain amount of discharge can be expected, the size of the radiator is enlarged, or natural air cooling is not used.
There was no choice but to change to the water cooling method. For this reason, the device on which the semiconductor device is mounted has become unnecessarily large, and the mounting cost has become remarkably expensive.

本発明は、小型で放熱効果の高い半導体装置を提供する
もので、これにより半導体装置を搭載した機器は小型に
なり、しかも実装コストも安価になるものである。
The present invention provides a semiconductor device that is small and has a high heat dissipation effect, whereby the equipment in which the semiconductor device is mounted is downsized and the mounting cost is also low.

問題点を解決するための手段 本発明の半導体装置は半導体素子の両面に放熱器を形成
したものである。
Means for Solving the Problems The semiconductor device of the present invention is one in which a radiator is formed on both sides of a semiconductor element.

作用 半導体素子の両面に放熱器を形成してあるから、放熱効
率が高く、従来の構成に比べて小型の放熱器で良い。
Action Since the heat radiator is formed on both sides of the semiconductor element, the heat radiation efficiency is high, and a smaller heat radiator than the conventional configuration is sufficient.

実施例 本発明の構成例を第1図に示す。半導体素子1の両面に
放熱器10および11が取付けられた構成である。また回路
基板4上には前記半導体素子1が垂直になる様に説置さ
れるものである。
EXAMPLE FIG. 1 shows a structural example of the present invention. The heat radiators 10 and 11 are attached to both surfaces of the semiconductor element 1. The semiconductor element 1 is placed on the circuit board 4 so as to be vertical.

本明綿の詳細な構成を第2図の分解斜視図で説明する。The detailed configuration of the present cotton will be described with reference to the exploded perspective view of FIG.

半導体素子1はフィルムテープ12上に搭載されるが、前
記半導体素子1が搭載される位置には切欠き孔が設けて
あり、この孔の突出したリード群と半導体素子1の電極
とが接合される。また前記フィルムテープ12の一端には
半導体素子1の入出力信号を取出すためる端子リード13
が形成されている。放熱器10,11には半導体素子を搭載
した前記フィルムテープ12を両側からはさみこんだ時、
放熱器間の隙間をなくするために、半導体素子1やフィ
ルムテープ12と合致する凹部14,15が形成されている。
The semiconductor element 1 is mounted on the film tape 12, and a cutout hole is provided at the position where the semiconductor element 1 is mounted, and the lead group having the protruding hole is joined to the electrode of the semiconductor element 1. It Also, one end of the film tape 12 has a terminal lead 13 for taking out an input / output signal of the semiconductor element 1.
Are formed. When sandwiching the film tape 12 with semiconductor elements mounted on the radiators 10 and 11 from both sides,
In order to eliminate the gap between the radiators, the recesses 14 and 15 that match the semiconductor element 1 and the film tape 12 are formed.

まず半導体素子1の搭載されたフィルムテープ12の両面
すなわち半導体素子1の両面から放熱器10,11ではさみ
こみ、ネジ16で放熱器10と11とを固定する。次いで、こ
の放熱器を回路基板に固定するためのL字治具17,18を
ネジ19により前記放熱器10,11に固定する。第3図はこ
の様にして完成した半導体装置を回路基板4に設置した
状態を示す。回路基板4への固定はL字治具17,18を通
してネジ19で行なわれる。またフィルムテープ12上に形
成され、半導体素子1の電極から延在した端子リード群
13は回路基板4の電極パターン20に半田づけされるもの
である。第3図の状態で半導体素子1の両面側に放熱器
を設け、かつ回路基板4に対し、半導体素子1は垂直に
取りつけられるものである。
First, the heat sinks 10 and 11 are sandwiched from both sides of the film tape 12 on which the semiconductor element 1 is mounted, that is, both sides of the semiconductor element 1, and the heat sinks 10 and 11 are fixed with screws 16. Next, L-shaped jigs 17 and 18 for fixing the radiator to the circuit board are fixed to the radiators 10 and 11 with screws 19. FIG. 3 shows a state in which the semiconductor device thus completed is installed on the circuit board 4. Fixing to the circuit board 4 is performed by screws 19 through L-shaped jigs 17 and 18. A group of terminal leads formed on the film tape 12 and extending from the electrodes of the semiconductor element 1.
13 is soldered to the electrode pattern 20 of the circuit board 4. In the state shown in FIG. 3, radiators are provided on both surface sides of the semiconductor element 1, and the semiconductor element 1 is mounted vertically to the circuit board 4.

また、放熱器の形状は板状,針状等のいずれでも良い。
半導体素子1を放熱器10,11で挾みこむ時に、半導体素
子周辺に熱伝導性の高い材料を充てんさせても良いもの
である。
The radiator may have a plate shape, a needle shape, or the like.
When the semiconductor element 1 is sandwiched by the radiators 10 and 11, the periphery of the semiconductor element may be filled with a material having high thermal conductivity.

発明の効果 以上のように本発明によれば、次のような効果を得るこ
とができる。
Effects of the Invention As described above, according to the present invention, the following effects can be obtained.

半導体素子の両側から放熱を行なう事ができるので放
熱効果が高い。実験によれば高さ9.5mmのアルミ製放熱
器で、その表面積が3000mm2の場合、第2図の従来例の
構成であれば、25℃/Wの熱抵抗であったが本発明の第1
図の構成では9℃/Wとなり、従来に比べ約1/2以下の熱
抵抗となった。
Since heat can be radiated from both sides of the semiconductor element, the heat radiation effect is high. According to the experiment, in the case of an aluminum radiator having a height of 9.5 mm and the surface area thereof is 3000 mm 2 , the thermal resistance of 25 ° C./W was obtained in the conventional configuration of FIG. 1
With the configuration shown in the figure, the temperature was 9 ° C / W, which was about half or less the thermal resistance of the conventional type.

本発明の構成では放熱器を垂直に立てて用いるので実
装面積が著じるしく小さくなる。
In the configuration of the present invention, since the radiator is vertically set and used, the mounting area is remarkably reduced.

等の効果を有する。And so on.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の一実施例の半導体装置の概略断面図、
第2図は本実施例の半導体装置の分解斜視図、第3図は
本実施例の半導体装置を回路基板に取つけた状態を示す
斜視図、第4図は従来の半導体装置の断面図である。 1……半導体素子、4……回路基板、10,11……放熱
器。
FIG. 1 is a schematic sectional view of a semiconductor device according to an embodiment of the present invention,
FIG. 2 is an exploded perspective view of the semiconductor device of this embodiment, FIG. 3 is a perspective view showing a state in which the semiconductor device of this embodiment is mounted on a circuit board, and FIG. 4 is a sectional view of a conventional semiconductor device. is there. 1 ... semiconductor element, 4 ... circuit board, 10,11 ... radiator.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】両面に放熱器を有しフィルムテープ上に搭
載された半導体素子が回路基板に対して垂直に設置され
ており、前記半導体素子に接続された前記フィルムテー
プ上のリード線の延在した一端が前記回路基板に接続さ
れていることを特徴とする半導体装置。
1. A semiconductor element having a radiator on both sides and mounted on a film tape is installed vertically to a circuit board, and a lead wire on the film tape connected to the semiconductor element extends. A semiconductor device, wherein the existing one end is connected to the circuit board.
JP62216852A 1987-08-31 1987-08-31 Semiconductor device Expired - Fee Related JPH0715962B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62216852A JPH0715962B2 (en) 1987-08-31 1987-08-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62216852A JPH0715962B2 (en) 1987-08-31 1987-08-31 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6459842A JPS6459842A (en) 1989-03-07
JPH0715962B2 true JPH0715962B2 (en) 1995-02-22

Family

ID=16694916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62216852A Expired - Fee Related JPH0715962B2 (en) 1987-08-31 1987-08-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0715962B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5449587A (en) * 1988-12-15 1995-09-12 Mitsui Toatsu Chemicals, Incorporated Compact disk-write once type optical recording media
US5109318A (en) * 1990-05-07 1992-04-28 International Business Machines Corporation Pluggable electronic circuit package assembly with snap together heat sink housing
TW379824U (en) * 1998-12-28 2000-01-11 Foxconn Prec Components Co Ltd Heat radiating apparatus
DE10244791B4 (en) * 2002-09-26 2009-03-26 Robert Bosch Gmbh Device for cooling electronic components

Also Published As

Publication number Publication date
JPS6459842A (en) 1989-03-07

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