JPH07135251A - Air bridge wiring for high-frequency circuit device - Google Patents

Air bridge wiring for high-frequency circuit device

Info

Publication number
JPH07135251A
JPH07135251A JP5282372A JP28237293A JPH07135251A JP H07135251 A JPH07135251 A JP H07135251A JP 5282372 A JP5282372 A JP 5282372A JP 28237293 A JP28237293 A JP 28237293A JP H07135251 A JPH07135251 A JP H07135251A
Authority
JP
Japan
Prior art keywords
wiring
width
air bridge
layer
layer wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5282372A
Other languages
Japanese (ja)
Other versions
JP3455995B2 (en
Inventor
Koichi Hoshino
浩一 星野
Takashi Taguchi
隆志 田口
Hirotane Ikeda
裕胤 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP28237293A priority Critical patent/JP3455995B2/en
Publication of JPH07135251A publication Critical patent/JPH07135251A/en
Application granted granted Critical
Publication of JP3455995B2 publication Critical patent/JP3455995B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To provide air bridge wiring for high-frequency circuit devices which can prevent sacrifice later removing time from becoming longer and the occurrence of the residue of a sacrifice layer and, at the same time, can reduce the parasitic capacitance between wires intersecting each other. CONSTITUTION:Upper-layer wiring 15 formed across lower-layer wiring 11 with an air gap in between has a pair of leg sections 15b rising from the fixing sections 15a of the wiring 15 extended on a substrate 12 and the leg sections 15b support in the air the overbridge section 15c of the wiring 15 having a narrower width than the fixing sections 15a have. When the upper-layer wiring 15 is constituted in such a way, a sacrifice layer immediately below the wiring 15 can be easily removed and the parasitic capacitance between the overbridge section 15c and lower-layer wiring 11 can be kept at a small value, because the overbridge section 15c has a narrow width even when the width of the wiring is large as a whole.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、高周波トランジスタや
高周波ICなどの高周波回路装置のエアブリッジ配線に
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to air bridge wiring for high frequency circuit devices such as high frequency transistors and high frequency ICs.

【0002】[0002]

【従来技術】特開昭63ー250155号公報は、高周
波回路の配線の寄生容量を低減するために空中配線(エ
アブリッジ配線)構造を提案している。
2. Description of the Related Art Japanese Unexamined Patent Publication (Kokai) No. 63-250155 proposes an aerial wiring (air bridge wiring) structure in order to reduce the parasitic capacitance of the wiring of a high frequency circuit.

【0003】[0003]

【発明が解決しようとする課題】このエアブリッジ配線
を形成するには、上層配線下の犠牲層を除去する必要が
あるが、配線幅が増大すると除去すべき犠牲層の体積が
増加するので、犠牲層除去時間の延長や犠牲層残渣の発
生が問題となる。また、配線幅が増大すると、犠牲層を
除去しても交差配線間の寄生容量が増大してしまい、そ
れにより交差配線間のクロストークもSN比劣化を生じ
させる。
In order to form this air bridge wiring, it is necessary to remove the sacrificial layer under the upper wiring, but as the wiring width increases, the volume of the sacrificial layer to be removed increases. There is a problem that the sacrifice layer removal time is extended and the sacrifice layer residue is generated. Further, if the wiring width is increased, the parasitic capacitance between the crossing wirings is increased even if the sacrificial layer is removed, so that the crosstalk between the crossing wirings also deteriorates the SN ratio.

【0004】さらに、上記のエアブリッジ配線を用いた
としても、周波数が高くなると寄生容量が増加する。こ
のため、高周波特性の劣化を招いてしまう。本発明は上
記問題点に鑑みなされたものであり、犠牲層除去時間の
延長や犠牲層残渣の発生を回避するとともに、交差配線
間の寄生容量の低減も実現可能な高周波回路装置のエア
ブリッジ配線を提供することを、その目的としている。
Further, even if the above air bridge wiring is used, the parasitic capacitance increases as the frequency increases. Therefore, the high frequency characteristics are deteriorated. The present invention has been made in view of the above problems, and it is possible to prevent the extension of the sacrifice layer removal time and the generation of a sacrifice layer residue, and to reduce the parasitic capacitance between the cross wirings. Its purpose is to provide.

【0005】[0005]

【課題を解決するための手段】本発明の高周波回路装置
のエアブリッジ配線は、基板上に延設された下層配線
と、空隙を隔てて前記下層配線と交差する上層配線とを
有し、前記上層配線は前記基板上に延設された敷設部
と、前記敷設部から互いに接近する方向に立ち上がる一
対の脚部と、両端が前記両脚部に支持される跨線部とか
らなる集積回路のエアブリッジ配線において、前記跨線
部の幅は、前記上層配線の他の部分の幅より狭く形成さ
れることを特徴としている。
The air bridge wiring of the high-frequency circuit device of the present invention has a lower layer wiring extended on a substrate and an upper layer wiring intersecting the lower layer wiring with a gap. The upper layer wiring is an air of an integrated circuit including a laying portion extended on the substrate, a pair of leg portions rising from the laying portion in a direction approaching each other, and a bridging portion having both ends supported by the both leg portions. In the bridge wiring, the width of the bridging portion is formed to be narrower than the width of other portions of the upper layer wiring.

【0006】なお、跨線部の幅を狭くするには跨線部の
中央部などに開口を設けるなどの方法で行うこともでき
る。好適な態様において、前記跨線部の幅は、前記脚部
の幅より狭く形成される。好適な態様において、前記脚
部の下部は前記脚部の上部より広幅に形成される。
The width of the bridging portion may be narrowed by providing an opening in the central portion of the bridging portion. In a preferred aspect, the width of the straddle portion is formed to be narrower than the width of the leg portion. In a preferred aspect, the lower portion of the leg portion is formed wider than the upper portion of the leg portion.

【0007】[0007]

【作用及び発明の効果】下層配線を跨ぐ上層配線は、基
板上に延設された敷設部から立ち上がる一対の脚部を有
し、一対の脚部は、他の部分より狭幅の跨線部を空中に
支持する。このようにすれば、上層配線の全体としての
幅が広くても、跨線部の幅は狭いために、直下の犠牲層
の除去は容易であり、しかも跨線部と下層配線との間の
寄生容量も小さい。もちろん、跨線部の電気抵抗は幅が
狭い分だけ増大するが、跨線部は下層配線を跨ぐに足る
長さがあればよく、上層配線全体としての抵抗増加はほ
とんど無視することができる。
The upper layer wiring straddling the lower layer wiring has a pair of leg portions rising from a laying portion extended on the substrate, and the pair of leg portions has a narrower straddle portion than the other portions. Support in the air. In this way, even if the overall width of the upper layer wiring is large, the width of the straddling portion is narrow, so that the sacrificial layer immediately below can be easily removed, and moreover, the sacrificial layer immediately below the wiring portion and the lower layer wiring can be easily removed. The parasitic capacitance is also small. Of course, the electric resistance of the straddle portion increases as the width is narrow, but the straddle portion only needs to have a length enough to straddle the lower layer wiring, and the increase in resistance of the entire upper layer wiring can be almost ignored.

【0008】好適な態様において、跨線部の幅は、脚部
の幅より狭く形成される。このようにすれば、脚部は自
己の強度に比べて比較的小型軽量の跨線部を支持するこ
とになり、振動などに対する強度が向上する。好適な態
様において、脚部の下部は脚部の上部より広幅に形成さ
れる。このようにすれば、脚部の強度低下を抑止しつ
つ、脚部に隣接する犠牲層の除去の容易化、及び脚部と
下層配線との間の寄生容量の削減を実現できる。
In a preferred mode, the width of the straddle portion is formed to be narrower than the width of the leg portion. With this configuration, the legs support the crossover part which is relatively small and lightweight as compared with its own strength, and the strength against vibration and the like is improved. In a preferred mode, the lower part of the leg is formed wider than the upper part of the leg. With this configuration, it is possible to prevent the sacrifice layer adjacent to the leg portion from being easily removed and to reduce the parasitic capacitance between the leg portion and the lower layer wiring while suppressing the strength reduction of the leg portion.

【0009】[0009]

【実施例】【Example】

(実施例1)本発明の高周波回路装置のエアブリッジ配
線の一例を(図示せず)1に基づいて説明する。図1
(a)はこのエアブリッジ配線の要部平面模式図を、図
1(b)は図1(a)のエアブリッジ構造のCーC線断
面模式図を示す。
(Embodiment 1) An example of the air bridge wiring of the high-frequency circuit device of the present invention will be described based on (not shown) 1. Figure 1
1A is a schematic plan view of a main part of the air bridge wiring, and FIG. 1B is a schematic cross-sectional view taken along the line C-C of the air bridge structure of FIG. 1A.

【0010】基板12上には下層配線11(以下配線1
1ともいう)と上層配線15(以下配線15ともいう)
が形成されており、配線11と配線15の交差部分で、
配線15は空中で配線11を跨ぐいわゆるエアブリッジ
配線構造となっている。すなわち、配線15は、基板1
2上に延設された広幅の敷設部15aと、敷設部15a
から互いに接近する略斜め方向に立ち上がる一対の脚部
15bと、両脚部に支持される狭幅の跨線部15cとか
らなる。また。脚部15bは下部から上部へ徐々に幅が
狭くなっている。
The lower layer wiring 11 (hereinafter referred to as wiring 1) is formed on the substrate 12.
1) and upper layer wiring 15 (hereinafter also referred to as wiring 15)
Is formed, and at the intersection of the wiring 11 and the wiring 15,
The wiring 15 has a so-called air bridge wiring structure that straddles the wiring 11 in the air. That is, the wiring 15 is the substrate 1
Wide laying part 15a extended above 2 and laying part 15a
And a pair of leg portions 15b standing up in a substantially diagonal direction approaching each other and a narrow straddle portion 15c supported by both leg portions. Also. The width of the leg portion 15b is gradually narrowed from the lower portion to the upper portion.

【0011】この実施例では、脚部15bの下端幅は3
0μm、上端幅は10μm、跨線部15cの幅は中央部
で10μmとなっている。また、跨線部15cの両端部
は脚部15bの上端に整合するように徐々に拡幅されて
いる。このようにすれば、エアブリッジ構造における跨
線部15cの幅は、脚部15bに比べて狭いので、後述
する犠牲層の除去は容易であり、しかも跨線部15cと
下層配線11との間の寄生容量も低減することができ
る。
In this embodiment, the lower end width of the leg 15b is 3
0 μm, the upper end width is 10 μm, and the width of the straddle portion 15c is 10 μm in the central portion. Further, both ends of the bridging portion 15c are gradually widened so as to be aligned with the upper ends of the leg portions 15b. In this way, the width of the overpass 15c in the air bridge structure is narrower than that of the leg 15b, so that it is easy to remove a sacrifice layer described later, and moreover, between the overpass 15c and the lower layer wiring 11. The parasitic capacitance of can also be reduced.

【0012】また、脚部15bは自己の強度に比べて比
較的小型軽量の跨線部15cを支持することになり、振
動などに対する強度が向上する。更に、脚部15bは下
部から上部へ徐々に幅が狭くなっているので、脚部15
bの強度低下を抑止しつつ、脚部15bに隣接する犠牲
層の除去の容易化、及び脚部15bと下層配線11との
間の寄生容量の低減が実現する。
Further, the leg portion 15b supports the crossover portion 15c which is comparatively small and light in weight as compared with its own strength, so that the strength against vibration and the like is improved. Further, the width of the leg portion 15b is gradually narrowed from the lower portion to the upper portion, so that the leg portion 15b
It is possible to easily remove the sacrificial layer adjacent to the leg portion 15b and reduce the parasitic capacitance between the leg portion 15b and the lower layer wiring 11 while suppressing the decrease in strength of b.

【0013】次にこのエアブリッジ配線の製造工程の一
例を図2(a)、(b)、(c)を参照して説明する。
図2(a)において、下層配線22が配設された基板2
1上に第1層目のレジストパターン23を形成する。こ
のレジストパターンは跨線部形成予定領域Aにおいて下
層配線22を覆っている。
Next, an example of the manufacturing process of this air bridge wiring will be described with reference to FIGS. 2 (a), 2 (b) and 2 (c).
In FIG. 2A, the substrate 2 on which the lower layer wiring 22 is arranged
A first-layer resist pattern 23 is formed on the first layer. This resist pattern covers the lower layer wiring 22 in the area A where the bridging portion is to be formed.

【0014】次に図2(b)に示すように、メッキ用の
給電電極24をマスク蒸着等の方法で形成し、さらに第
2層目のレジストパターン25を形成する。給電電極2
4は、跨線部形成予定領域Aの表面及びその左右の脚部
形成予定領域Bの表面に配設された給電電極24aと、
給電電極部24aに給電するための給電電極24bとか
らなる。第2層目のレジストパターン25は、給電電極
部24aを露出し、給電電極24bを覆う。次に、給電
電極24を通じて電流を流して、給電電極24a上にエ
アブリッジ配線26を電解メッキにより形成する。
Next, as shown in FIG. 2B, a power supply electrode 24 for plating is formed by a method such as mask vapor deposition, and a resist pattern 25 of the second layer is further formed. Feeding electrode 2
Reference numeral 4 denotes a power supply electrode 24a provided on the surface of the straddle portion formation-scheduled region A and the surfaces of the leg portion formation-scheduled regions B on the left and right thereof,
It is composed of a power feeding electrode 24b for feeding power to the power feeding electrode portion 24a. The second-layer resist pattern 25 exposes the power feeding electrode portion 24a and covers the power feeding electrode 24b. Next, an electric current is passed through the power feeding electrode 24 to form the air bridge wiring 26 on the power feeding electrode 24a by electrolytic plating.

【0015】次に、第2層レジストパターン25と給電
電極24b、更に第1層レジストパターン23を順に除
去し、図2(c)に示すエアブリッジ配線を得る。第1
層レジスト23および第2層レジスト25の除去は、酸
素アッシングまたはアセトンやレジストリムーバー等の
有機溶剤による洗浄等により行う。また給電電極24は
ウエットエッチングやアルゴンスパッタ等の方法により
除去する。
Next, the second layer resist pattern 25, the power supply electrode 24b, and the first layer resist pattern 23 are sequentially removed to obtain the air bridge wiring shown in FIG. 2 (c). First
The layer resist 23 and the second layer resist 25 are removed by oxygen ashing or cleaning with an organic solvent such as acetone or a resist remover. The power supply electrode 24 is removed by a method such as wet etching or argon sputtering.

【0016】なお、メッキ用の給電電極24をマスク蒸
着等の方法で形成する前に、第1層目のレジストパター
ン23を熱軟化するなどして山状に変形すれば、図1に
示すように給電電極24を斜めに立ち上げることができ
る。 (他の実施例)本発明によるエアブリッジ構造の他の実
施例を図3(a)、(b)に基づいて説明する。図3
(a)はこのエアブリッジ配線の平面模式図を示し、図
3(b)はそのDーD線断面模式図を示す。
Before forming the feeding electrode 24 for plating by a method such as mask vapor deposition, if the resist pattern 23 of the first layer is deformed into a mountain shape by thermal softening, as shown in FIG. Further, the power feeding electrode 24 can be raised obliquely. (Other Embodiments) Another embodiment of the air bridge structure according to the present invention will be described with reference to FIGS. 3 (a) and 3 (b). Figure 3
FIG. 3A is a schematic plan view of this air bridge wiring, and FIG. 3B is a schematic cross-sectional view taken along the line DD of FIG.

【0017】図3(a)、(b)において、基板32上
に下層配線31と上層配線35が形成されており、配線
31と配線35との交差部分で、配線35は空中で配線
31を乗り越えるいわゆるエアブリッジ配線となってい
る。配線35の跨線部35cにおいて、配線31直上方
に位置して配線35に開口部33が形成されている。こ
の開口の形成プロセスは、例えば図2(b)において、
マスク蒸着される給電電極24のパターンに開口を形成
すればよい。
In FIGS. 3A and 3B, the lower layer wiring 31 and the upper layer wiring 35 are formed on the substrate 32, and the wiring 35 is formed in the air at the intersection of the wiring 31 and the wiring 35. It is so-called air bridge wiring to get over. An opening 33 is formed in the wiring 35 at a position directly above the wiring 31 in the bridging portion 35c of the wiring 35. The process of forming this opening is, for example, as shown in FIG.
An opening may be formed in the pattern of the power supply electrode 24 that is mask-deposited.

【0018】なお、開口部33の形状は、四角形とした
が、円形やひし形や楕円形等、形状は問わない。また、
複数の開口を設けることも可能である。このようにすれ
ば、上層配線35の跨線部35cの幅はその敷設部35
aの幅より削減され、かつ、跨線部35cの中央部に開
口35cを有するので、上層配線35と下層配線とのオ
ーバーラップ(交差)面積が削減されて寄生容量を小さ
くすることができる。
Although the shape of the opening 33 is a quadrangle, it may be a circle, a rhombus, an ellipse or the like. Also,
It is also possible to provide a plurality of openings. In this way, the width of the bridging portion 35c of the upper layer wiring 35 is determined by the laying portion 35 thereof.
Since the width is smaller than the width a and the opening 35c is provided in the center of the straddle portion 35c, the overlap (intersection) area between the upper layer wiring 35 and the lower layer wiring can be reduced and the parasitic capacitance can be reduced.

【0019】さらに開口部34を設けることにより、跨
線部35c直下の第1層目のレジストパターン23の除
去も容易となる効果が生じる。つまり、図2(b)にお
いて、第1層目のレジスト23をレジストの溶剤による
洗浄等の方法により除去する場合、エアブリッジ配線に
設けた開口部からも第1層目のレジスト23の除去が行
われ、レジストの除去時間を低減したり、エアブリッジ
配線下に発生するレジスト残渣を防止することが可能と
なる。
Further, by providing the opening 34, it is possible to easily remove the resist pattern 23 of the first layer immediately below the bridging portion 35c. That is, in FIG. 2B, when the resist 23 of the first layer is removed by a method such as cleaning the resist with a solvent, the resist 23 of the first layer can be removed from the opening provided in the air bridge wiring. It is possible to reduce the resist removal time and prevent the resist residue generated under the air bridge wiring.

【図面の簡単な説明】[Brief description of drawings]

【図1】図1(a)はこのエアブリッジ配線の要部平面
模式図を、図1(b)はそのCーC線断面模式図を示
す。
FIG. 1 (a) is a schematic plan view of a main portion of this air bridge wiring, and FIG. 1 (b) is a schematic cross-sectional view taken along the line C-C.

【図2】エアブリッジ配線の製造工程の一例を示す。FIG. 2 shows an example of a manufacturing process of air bridge wiring.

【図3】図3(a)はこのエアブリッジ配線の平面模式
図を示し、図3(b)はそのDーD線断面模式図を示
す。
FIG. 3 (a) shows a schematic plan view of this air bridge wiring, and FIG. 3 (b) shows a schematic sectional view taken along the line D-D.

【符号の説明】[Explanation of symbols]

11は下層配線、12は基板、15は上層配線、15a
は敷設部、15bは脚部、15cは跨線部。
11 is a lower layer wiring, 12 is a substrate, 15 is an upper layer wiring, 15a
Is a laying portion, 15b is a leg portion, and 15c is a crossover portion.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】基板上に延設された下層配線と、空隙を隔
てて前記下層配線と交差する上層配線とを有し、前記上
層配線は前記基板上に延設された敷設部と、前記敷設部
から互いに接近する方向に立ち上がる一対の脚部と、両
端が前記両脚部に支持される跨線部とからなる集積回路
のエアブリッジ配線において、 前記跨線部の幅は、前記上層配線の他の部分の幅より狭
く形成されることを特徴とする高周波回路装置のエアブ
リッジ配線。
1. A lower layer wiring extending on a substrate, and an upper layer wiring intersecting the lower layer wiring with a gap therebetween, the upper layer wiring being a laying portion extended on the substrate, In an air bridge wiring of an integrated circuit consisting of a pair of legs rising in a direction approaching each other from a laid portion and a bridging portion whose both ends are supported by the both legs, the width of the bridging portion is equal to that of the upper layer wiring. Air bridge wiring for a high-frequency circuit device, which is formed to be narrower than the width of other portions.
【請求項2】前記跨線部の幅は、前記脚部の幅より狭く
形成される請求項1記載の高周波回路装置のエアブリッ
ジ配線。
2. The air bridge wiring of the high frequency circuit device according to claim 1, wherein a width of the bridging portion is formed narrower than a width of the leg portion.
【請求項3】前記脚部の下部は前記脚部の上部より広幅
に形成される請求項1記載の高周波回路装置のエアブリ
ッジ配線。
3. The air bridge wiring of the high frequency circuit device according to claim 1, wherein a lower portion of the leg portion is formed wider than an upper portion of the leg portion.
JP28237293A 1993-11-11 1993-11-11 Air bridge wiring for high frequency circuit devices Expired - Fee Related JP3455995B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28237293A JP3455995B2 (en) 1993-11-11 1993-11-11 Air bridge wiring for high frequency circuit devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28237293A JP3455995B2 (en) 1993-11-11 1993-11-11 Air bridge wiring for high frequency circuit devices

Publications (2)

Publication Number Publication Date
JPH07135251A true JPH07135251A (en) 1995-05-23
JP3455995B2 JP3455995B2 (en) 2003-10-14

Family

ID=17651552

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KR100367623B1 (en) * 1999-11-29 2003-01-10 대한민국 An air-gap stacked Microstrip 3 dB coupler for MMIC and fabricating method thereof
JP2004514271A (en) * 2000-07-12 2004-05-13 モトローラ・インコーポレイテッド Electronic components and manufacturing method
JP2007201413A (en) * 2006-01-25 2007-08-09 Toshiba Corp Semiconductor device
EP1986232A2 (en) 2007-04-23 2008-10-29 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
WO2013111725A1 (en) * 2012-01-26 2013-08-01 シャープ株式会社 Semiconductor device and method for manufacturing same
JP2016181758A (en) * 2015-03-23 2016-10-13 太陽誘電株式会社 Elastic wave device and method for manufacturing the same
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100367623B1 (en) * 1999-11-29 2003-01-10 대한민국 An air-gap stacked Microstrip 3 dB coupler for MMIC and fabricating method thereof
JP2004514271A (en) * 2000-07-12 2004-05-13 モトローラ・インコーポレイテッド Electronic components and manufacturing method
JP2007201413A (en) * 2006-01-25 2007-08-09 Toshiba Corp Semiconductor device
EP1986232A2 (en) 2007-04-23 2008-10-29 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US7812451B2 (en) 2007-04-23 2010-10-12 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP2018109771A (en) * 2012-01-20 2018-07-12 株式会社半導体エネルギー研究所 Light emission device
JP2019194712A (en) * 2012-01-20 2019-11-07 株式会社半導体エネルギー研究所 Semiconductor device
WO2013111725A1 (en) * 2012-01-26 2013-08-01 シャープ株式会社 Semiconductor device and method for manufacturing same
JP2016181758A (en) * 2015-03-23 2016-10-13 太陽誘電株式会社 Elastic wave device and method for manufacturing the same

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