JPH07133165A - Production of joined ferrite - Google Patents
Production of joined ferriteInfo
- Publication number
- JPH07133165A JPH07133165A JP5274516A JP27451693A JPH07133165A JP H07133165 A JPH07133165 A JP H07133165A JP 5274516 A JP5274516 A JP 5274516A JP 27451693 A JP27451693 A JP 27451693A JP H07133165 A JPH07133165 A JP H07133165A
- Authority
- JP
- Japan
- Prior art keywords
- ferrite
- single crystal
- bonding
- polycrystal
- bonded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Magnetic Heads (AREA)
- Soft Magnetic Materials (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、高性能ＶＴＲ等に使わ
れる複合型磁気ヘッド等に用いられる接合フェライトの
製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a bonded ferrite used in a composite type magnetic head used in a high performance VTR or the like.
【０００２】[0002]
【従来の技術】近年、高性能なビデオヘッド等の磁気ヘ
ッドの磁気コアとして、Ｍｎ−Ｚｎフェライト単結晶に
替わり、フロントギャップ側にＭｎ−Ｚｎフェライト単
結晶、バックギャップ側にＭｎ−Ｚｎフェライト多結晶
を配して構成される接合フェライトが採用されている。
前記接合フェライトを磁気コアとして採用した磁気ヘッ
ドは、Ｍｎ−Ｚｎフェライト単結晶を磁気コアとした磁
気ヘッドと比較し、摺動ノイズが低く、Ｓ／Ｎ比が高い
特徴がある。2. Description of the Related Art In recent years, as magnetic cores for magnetic heads such as high-performance video heads, Mn-Zn ferrite single crystals have been replaced with Mn-Zn ferrite single crystals on the front gap side and Mn-Zn ferrite multiple crystals on the back gap side. A bonded ferrite composed of crystals is used.
The magnetic head using the bonded ferrite as a magnetic core is characterized by lower sliding noise and a higher S / N ratio than a magnetic head using a magnetic core of Mn—Zn ferrite single crystal.
【０００３】このような接合フェライトは、Ｍｎ−Ｚｎ
フェライト単結晶とＭｎ−Ｚｎフェライト多結晶をそれ
ぞれ作製、加工し、鏡面状態のＭｎ−Ｚｎフェライト単
結晶基板とＭｎ−Ｚｎフェライト多結晶基板を得、続い
て加圧しながら熱処理し接合する方法により製造されて
いる。Such bonded ferrite is Mn--Zn.
Manufactured by a method of producing and processing a ferrite single crystal and a Mn-Zn ferrite polycrystal, respectively, to obtain a mirror-finished Mn-Zn ferrite single crystal substrate and a Mn-Zn ferrite polycrystal substrate, and subsequently performing heat treatment and bonding while applying pressure. Has been done.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上述の
接合フェライトの製造方法では、十分な接合強度を得る
ため、Ｍｎ−Ｚｎフェライト単結晶とＭｎ−Ｚｎフェラ
イト多結晶の固相熱拡散を十分におこさせるため、Ｍｎ
−Ｚｎフェライト単結晶とＭｎ−Ｚｎフェライト多結晶
を直接接触させ、基板全体を数ＭＰａで加圧しながら１
２００℃以上の高温で処理することが必要である。この
ため、接合界面でＭｎ−Ｚｎフェライト多結晶の粒成長
が起こり、接合界面が数μｍ〜数十μｍ乱れている。こ
の結果、前記製造方法で作製した接合フェライトを磁気
コアとした磁気ヘッドの摺動ノイズは、Ｍｎ−Ｚｎフェ
ライト単結晶を磁気コアとした磁気ヘッドと比較し、十
分に低いものの、バラツキが大きくなる問題が生じてい
る。However, in the above-mentioned method for producing the bonded ferrite, the solid phase thermal diffusion of the Mn-Zn ferrite single crystal and the Mn-Zn ferrite polycrystal is sufficiently performed in order to obtain sufficient bonding strength. To make Mn
-Zn ferrite single crystal and Mn-Zn ferrite polycrystal are brought into direct contact with each other, while pressing the whole substrate at several MPa, 1
It is necessary to treat at a high temperature of 200 ° C or higher. For this reason, grain growth of Mn—Zn ferrite polycrystal occurs at the bonding interface, and the bonding interface is disturbed by several μm to several tens of μm. As a result, the sliding noise of the magnetic head using the bonded ferrite manufactured by the manufacturing method as the magnetic core is sufficiently low as compared with the magnetic head using the Mn-Zn ferrite single crystal as the magnetic core, but the variation is large. There is a problem.
【０００５】また、Ｍｎ−Ｚｎフェライト多結晶として
加工性に優れた熱間等方圧プレス処理を施した高性能な
Ｍｎ−Ｚｎフェライト多結晶（以下、ＨＩＰ材と称す
る。）を用いて従来の接合フェライトの製造方法で接合
した場合、ＨＩＰ材の気孔が戻るため、ヘッドチップの
加工時における寸法精度及びＨＩＰ材の特性が劣化して
しまう。そのため、従来の接合フェライトの製造方法で
は、ＨＩＰ材を適用することはできない。Further, as a Mn-Zn ferrite polycrystal, a high-performance Mn-Zn ferrite polycrystal (hereinafter referred to as a HIP material) which has been hot-isostatically pressed with excellent workability is used. When bonded by the method of manufacturing the bonded ferrite, the pores of the HIP material are restored, so that the dimensional accuracy and the characteristics of the HIP material during processing of the head chip deteriorate. Therefore, the HIP material cannot be applied in the conventional method for producing bonded ferrite.
【０００６】また、Ｍｎ−Ｚｎフェライト単結晶とＭｎ
−Ｚｎフェライト多結晶の接合界面に剥がれ及びボイド
等の接合不良が生じ歩留りを悪化させることがある。そ
こで、本発明は接合界面を平坦に制御するとともに、低
温で接合が可能で、かつ接合不良を抑え歩留りを向上さ
せる接合フェライトの製造方法を提供することを目的と
する。Further, Mn-Zn ferrite single crystal and Mn
In some cases, peeling and voids or other bonding defects occur at the bonding interface of the —Zn ferrite polycrystal, and the yield is deteriorated. Therefore, it is an object of the present invention to provide a method for producing a bonded ferrite that can control the bonding interface to be flat, can bond at a low temperature, and can suppress the bonding failure and improve the yield.
【０００７】[0007]
【課題を解決するための手段】本発明は、Ｍｎ−Ｚｎフ
ェライト単結晶とＭｎ−Ｚｎフェライト多結晶とを接合
してなる接合フェライトの製造方法において、厚みの平
行度が８μｍ以下かつ表面粗さＲａが０．１μｍ以下の
Ｍｎ−Ｚｎフェライト単結晶及びＭｎ−Ｚｎフェライト
多結晶の基板を用いて接合することを特徴とするもので
ある。SUMMARY OF THE INVENTION The present invention is a method for producing a bonded ferrite, which comprises bonding a Mn-Zn ferrite single crystal and a Mn-Zn ferrite polycrystal, and has a parallelism of thickness of 8 μm or less and a surface roughness. It is characterized in that the Mn—Zn ferrite single crystal and the Mn—Zn ferrite polycrystal substrate having Ra of 0.1 μm or less are used for bonding.
【０００８】[0008]
【作用】かかる本発明において、厚みの平行度が８μｍ
以下かつ表面粗さＲａが０．１μｍ以下のＭｎ−Ｚｎフ
ェライト単結晶及びＭｎ−Ｚｎフェライト多結晶の基板
を用いて接合することにより、従来の接合フェライトの
製造方法の接合温度よりも低い温度で接合することが可
能となるとともに、接合界面を平坦に制御しかつ接合不
良を抑え歩留りを向上させることも可能となる。このた
め、本発明の製造方法により作製した接合フェライトを
採用した磁気ヘッドは、従来の製造方法で作製した接合
フェライトを磁気コアとした磁気ヘッドと比較し、摺動
ノイズをより低減でき、かつバラツキを小さくすること
が可能となる。また、ＨＩＰ材の気孔が戻らない温度で
接合が可能になるため、Ｍｎ−Ｚｎフェライト多結晶と
してＨＩＰ材を高性能なまま適用することが可能とな
る。さらに、接合不良を抑え歩留りを向上させるため、
生産性の向上が図れる。In the present invention, the parallelism of thickness is 8 μm.
By using the substrates of Mn-Zn ferrite single crystal and Mn-Zn ferrite polycrystal having the following surface roughness Ra of 0.1 μm or less, the temperature is lower than the bonding temperature of the conventional method for manufacturing bonded ferrite. It becomes possible to bond, and it is also possible to control the bonding interface to be flat, suppress bonding defects, and improve the yield. Therefore, the magnetic head that uses the bonded ferrite manufactured by the manufacturing method of the present invention can reduce sliding noise more than the magnetic head in which the bonded ferrite manufactured by the conventional manufacturing method is used as the magnetic core, and the variation can be improved. Can be reduced. Further, since the bonding can be performed at a temperature at which the pores of the HIP material do not return, it is possible to apply the HIP material as Mn-Zn ferrite polycrystal with high performance. Furthermore, in order to suppress defective joints and improve yield,
Productivity can be improved.
【０００９】[0009]
【実施例】以下、本発明を具体的な実施例により説明す
るが、本発明がこの実施例に限定されるものではないこ
とは言うまでもない。 〔実施例１〕先ず、ＨＩＰ材を作製した。即ち、Ｆｅ2
Ｏ3 ５２．５モル％、ＺｎＯ１９．０モル％、ＭｎＯ２
８．５モル％からなるフェライト原料粉を湿式混合し、
これらを乾燥させた後、所定のサイズのブロックにプレ
ス成形し、続いて１３００℃の温度のもとで５時間かけ
て焼結し、Ｍｎ−Ｚｎフェライト多結晶を得た。その
後、Ｍｎ−Ｚｎフェライト多結晶をＡｒにより１００Ｍ
Ｐａで加圧しながら、１２００℃で２時間ＨＩＰ処理を
行いＨＩＰ材を作製した。EXAMPLES The present invention will be described below with reference to specific examples, but it goes without saying that the present invention is not limited to these examples. [Example 1] First, a HIP material was manufactured. That is, Fe 2
O 3 52.5 mol%, ZnO19.0 mol%, MnO2
Wet-mixing ferrite raw material powder consisting of 8.5 mol%,
After these were dried, they were press-molded into a block of a predetermined size, and subsequently sintered at a temperature of 1300 ° C. for 5 hours to obtain a Mn-Zn ferrite polycrystal. Then, the Mn-Zn ferrite polycrystal was made to 100 M with Ar.
While pressurizing at Pa, HIP treatment was performed at 1200 ° C. for 2 hours to produce a HIP material.
【００１０】次に、Ｍｎ−Ｚｎフェライト単結晶を作製
した。即ち、上述のＭｎ−Ｚｎフェライト多結晶の作製
方法と同様にＭｎ−Ｚｎフェライト多結晶を作製し、得
られたＭｎ−Ｚｎフェライト多結晶を公知のブリッジマ
ン法により白金ルツボ中で溶解させた後、先端部より単
結晶化させＭｎ−Ｚｎフェライト単結晶を得た。Next, a Mn-Zn ferrite single crystal was prepared. That is, after the Mn-Zn ferrite polycrystal was prepared in the same manner as the above Mn-Zn ferrite polycrystal, and the obtained Mn-Zn ferrite polycrystal was dissolved in a platinum crucible by the known Bridgman method. , And single crystallized from the tip to obtain Mn-Zn ferrite single crystal.
【００１１】続いて、得られたＨＩＰ材とＭｎ−Ｚｎフ
ェライト単結晶よりおのおの３０ｍｍ×１０ｍｍ×３ｍ
ｍの平板に加工し、３０ｍｍ×１０ｍｍの接合面を鏡面
加工により、表面粗さＲａが０．０１μｍ、平行度が０
μｍ〜１５μｍになるようにした。Then, each of the obtained HIP material and Mn-Zn ferrite single crystal was 30 mm × 10 mm × 3 m.
The surface roughness Ra is 0.01 μm and the parallelism is 0 by processing a 30 mm × 10 mm joint surface by mirror processing.
It was made to be in the range of μm to 15 μm.
【００１２】そして、得られたＨＩＰ材及びＭｎ−Ｚｎ
フェライト単結晶の基板を用いて、ＨＩＰ材の接合面と
Ｍｎ−Ｚｎフェライト単結晶の接合面を接触させ、接合
面の法線方向より基板全体に１０ＭＰａの圧力を加えな
がら、１体積％Ｏ2 −９９体積％Ｎ2 雰囲気のもと１０
００℃で２時間熱処理を行い平行度と剥がれ率の関係を
検討した。この結果を図１に示す。ここで、剥がれ率と
は、測定した接合界面の長さに対する剥がれている部分
の長さの割合を示した。Then, the obtained HIP material and Mn-Zn
Using a ferrite single crystal substrate, the bonding surface of the HIP material and the bonding surface of the Mn—Zn ferrite single crystal are brought into contact with each other, and a pressure of 10 MPa is applied to the entire substrate in the normal direction of the bonding surface, and 1 vol% O 2 -99% by volume under N 2 atmosphere 10
A heat treatment was carried out at 00 ° C. for 2 hours to examine the relationship between parallelism and peeling rate. The result is shown in FIG. Here, the peeling rate indicates the ratio of the length of the peeled portion to the measured length of the bonding interface.
【００１３】図１に示すように、表面粗さＲａが０．０
１μｍのＨＩＰ材及びＭｎ−Ｚｎフェライト単結晶基板
の平行度が８μｍ以下の場合、接合界面に剥がれが無い
接合フェライトが得られることが判明した。また、ＨＩ
Ｐ材及びＭｎ−Ｚｎフェライト単結晶の接合界面の拡散
層を調べた結果、平均拡散層が１μｍ以下と非常に平坦
であることが判明した。さらに、ＨＩＰ材の気孔率を調
べた結果、０．０１％以下と気孔がほとんど戻らないこ
とが判明した。As shown in FIG. 1, the surface roughness Ra is 0.0
It was found that when the parallelism of the 1 μm HIP material and the Mn—Zn ferrite single crystal substrate was 8 μm or less, a bonded ferrite having no peeling at the bonding interface was obtained. Also, HI
As a result of examining the diffusion layer at the bonding interface between the P material and the Mn—Zn ferrite single crystal, it was found that the average diffusion layer was 1 μm or less, which was very flat. Further, as a result of examining the porosity of the HIP material, it was found that the porosity was 0.01% or less and the porosity hardly returned.
【００１４】このように、表面粗さＲａが０．０１μｍ
かつ平行度が８μｍ以下のＨＩＰ材及びＭｎ−Ｚｎフェ
ライト単結晶基板を使用し接合することにより、従来の
接合方法の接合温度よりも２００℃以上低く、ＨＩＰ材
及びＭｎ−Ｚｎフェライト単結晶があまり固相熱拡散せ
ず、かつＨＩＰ材の気孔が戻らない温度で接合しても、
剥がれの無い接合フェライトが得られる。Thus, the surface roughness Ra is 0.01 μm.
By using a HIP material having a parallelism of 8 μm or less and a Mn-Zn ferrite single crystal substrate, the joining temperature is lower than the joining temperature of the conventional joining method by 200 ° C. or more, and the HIP material and the Mn-Zn ferrite single crystal are not much. Even if they are bonded at a temperature that does not cause solid-phase heat diffusion and the pores of the HIP material do not return,
A bonded ferrite that does not come off can be obtained.
【００１５】〔実施例２〕実施例１と同様な組成及び作
製法で、ＨＩＰ材及びＭｎ−Ｚｎフェライト単結晶を作
製した。続いて、得られたＨＩＰ材とＭｎ−Ｚｎフェラ
イト単結晶よりおのおの３０ｍｍ×１０ｍｍ×３ｍｍの
平板に加工し、３０ｍｍ×１０ｍｍの接合面を鏡面加工
により、平行度が８μｍ、表面粗さＲａが０．００１μ
ｍ〜１．０μｍになるようにした。Example 2 A HIP material and a Mn-Zn ferrite single crystal were produced with the same composition and production method as in Example 1. Subsequently, each of the obtained HIP material and Mn-Zn ferrite single crystal was processed into a flat plate of 30 mm x 10 mm x 3 mm, and the joint surface of 30 mm x 10 mm was mirror-finished to have a parallelism of 8 µm and a surface roughness Ra of 0. .001μ
m to 1.0 μm.
【００１６】そして、得られたＨＩＰ材及びＭｎ−Ｚｎ
フェライト単結晶の基板を用いて、ＨＩＰ材の接合面と
Ｍｎ−Ｚｎフェライト単結晶の接合面を接触させ、接合
面の法線方向より基板全体に１０ＭＰａの圧力を加えな
がら、１体積％Ｏ2 −９９体積％Ｎ2 雰囲気のもと１０
００℃で２時間熱処理を行い表面粗さＲａと剥がれ率の
関係を検討した。この結果を図２に示す。Then, the obtained HIP material and Mn-Zn
Using a ferrite single crystal substrate, the bonding surface of the HIP material and the bonding surface of the Mn—Zn ferrite single crystal are brought into contact with each other, and a pressure of 10 MPa is applied to the entire substrate in the normal direction of the bonding surface, and 1 vol% O 2 -99% by volume under N 2 atmosphere 10
A heat treatment was performed at 00 ° C. for 2 hours to examine the relationship between the surface roughness Ra and the peeling rate. The result is shown in FIG.
【００１７】図２に示すように、平行度が８μｍのＨＩ
Ｐ材及びＭｎ−Ｚｎフェライト単結晶基板の表面粗さＲ
ａが０．１μｍ以下の場合、接合界面に剥がれが無い接
合フェライトが得られることが判明した。また、ＨＩＰ
材及びＭｎ−Ｚｎフェライト単結晶の接合界面の拡散層
を調べた結果、平均拡散層が１μｍ以下と非常に平坦で
あることが判明した。さらに、ＨＩＰ材の気孔率を調べ
た結果、０．０１％以下と気孔がほとんど戻らないこと
が判明した。As shown in FIG. 2, the HI having a parallelism of 8 μm.
Surface roughness R of P material and Mn-Zn ferrite single crystal substrate
It was found that when a is 0.1 μm or less, bonded ferrite having no peeling at the bonded interface can be obtained. Also, HIP
As a result of examining the diffusion layer at the bonding interface between the material and the Mn—Zn ferrite single crystal, it was found that the average diffusion layer was 1 μm or less, which was very flat. Further, as a result of examining the porosity of the HIP material, it was found that the porosity was 0.01% or less and the porosity hardly returned.
【００１８】このように、平行度が８μｍかつ表面粗さ
が０．１μｍ以下のＨＩＰ材及びＭｎ−Ｚｎフェライト
単結晶基板を使用し接合することにより、従来の接合方
法の接合温度よりも２００℃以上低く、ＨＩＰ材及びＭ
ｎ−Ｚｎフェライト単結晶があまり固相熱拡散せず、か
つＨＩＰ材の気孔が戻らない温度で接合しても、剥がれ
の無い接合フェライトが得られる。As described above, by using the HIP material having the parallelism of 8 μm and the surface roughness of 0.1 μm or less and the Mn-Zn ferrite single crystal substrate, the bonding temperature is 200 ° C. higher than the bonding temperature of the conventional bonding method. Lower than above, HIP material and M
Even if the n-Zn ferrite single crystal does not undergo solid-phase thermal diffusion so much and the pores of the HIP material do not return, the bonded ferrite can be obtained without peeling.
【００１９】以上述べてきたように、厚みの平行度が８
μｍ以下かつ表面粗さＲａが０．１μｍ以下のＭｎ−Ｚ
ｎフェライト単結晶及びＭｎ−Ｚｎフェライト多結晶の
基板を用いて接合することにより、従来の接合フェライ
トの製造方法の接合温度よりも低い温度で接合すること
が可能となるとともに、接合界面を平坦に制御しかつ接
合不良を抑え歩留りを向上させることも可能となる。As described above, the parallelism of thickness is 8
Mn-Z with a surface roughness Ra of 0.1 μm or less and μm or less
By using the n-ferrite single crystal and Mn-Zn ferrite polycrystal substrates for bonding, it becomes possible to bond at a temperature lower than the bonding temperature of the conventional bonded ferrite manufacturing method, and the bonding interface becomes flat. It is also possible to control and suppress the bonding failure and improve the yield.
【００２０】尚、上述実施例においては、Ｍｎ−Ｚｎフ
ェライト多結晶及びＭｎ−Ｚｎフェライト単結晶の作製
時の原料粉の混合割合を、Ｆｅ2 Ｏ3 を５２．５モル
％、ＺｎＯを１９．０モル％、ＭｎＯを２８．５モル％
とした場合について述べたが、この混合割合はＦｅ2 Ｏ
3 が５０．０〜６５．０モル％、ＺｎＯが５．０〜３
０．０モル％、ＭｎＯが５．０〜４５．０モル％の範囲
で任意に設定することができ、この場合にも上述同様の
作用効果を得ることができる。In the above-mentioned examples, the mixing ratio of the raw material powders at the time of producing the Mn-Zn ferrite polycrystal and the Mn-Zn ferrite single crystal was 52.5 mol% for Fe 2 O 3 and 19 for ZnO. 0 mol%, MnO 28.5 mol%
However, the mixing ratio is Fe 2 O.
3 is 50.0 to 65.0 mol% and ZnO is 5.0 to 3
0.0 mol% and MnO can be arbitrarily set in the range of 5.0 to 45.0 mol%, and in this case, the same function and effect as described above can be obtained.
【００２１】また、必要に応じて前記混合割合の組成
に、Ｆｅ2 Ｏ3 、ＺｎＯ及びＭｎＯ以外の酸化物の中、
１種類以上を０．０１重量％以上１重量％以下添加した
場合でも上述同様の作用効果を得ることができる。If necessary, the composition of the above mixing ratio may be adjusted to any of oxides other than Fe 2 O 3 , ZnO and MnO,
Even when one or more kinds are added in an amount of 0.01% by weight or more and 1% by weight or less, the same effects as described above can be obtained.
【００２２】[0022]
【発明の効果】本発明に依れば、厚みの平行度が８μｍ
以下かつ表面粗さＲａが０．１μｍ以下のＭｎ−Ｚｎフ
ェライト単結晶及びＭｎ−Ｚｎフェライト多結晶の基板
を用いて接合することにより、従来の接合フェライトの
製造方法の接合温度よりも低い温度で接合することが可
能となるとともに、接合界面を平坦に制御しかつ接合不
良を抑え歩留りを向上させることも可能となる。このた
め、本発明の製造方法により作製した接合フェライトを
採用した磁気ヘッドは、従来の製造方法で作製した接合
フェライトを磁気コアとした磁気ヘッドと比較し、摺動
ノイズをより低減でき、かつバラツキを小さくすること
が可能となる。また、ＨＩＰ材の気孔が戻らない温度で
接合が可能になるため、Ｍｎ−Ｚｎフェライト多結晶と
して、ＨＩＰ材を高性能なまま適用することが可能とな
る。According to the present invention, the parallelism of thickness is 8 μm.
By using the substrates of Mn-Zn ferrite single crystal and Mn-Zn ferrite polycrystal having the following surface roughness Ra of 0.1 μm or less, the temperature is lower than the bonding temperature of the conventional method for manufacturing bonded ferrite. It becomes possible to bond, and it is also possible to control the bonding interface to be flat, suppress bonding defects, and improve the yield. Therefore, the magnetic head that uses the bonded ferrite manufactured by the manufacturing method of the present invention can reduce sliding noise more than the magnetic head in which the bonded ferrite manufactured by the conventional manufacturing method is used as the magnetic core, and the variation can be improved. Can be reduced. Further, since the bonding can be performed at a temperature at which the pores of the HIP material do not return, it is possible to apply the HIP material as a Mn-Zn ferrite polycrystal with high performance.
【図１】平行度と剥がれ率の関係を示す図である。FIG. 1 is a diagram showing the relationship between parallelism and peeling rate.
【図２】表面粗さＲａと剥がれ率の関係を示す図であ
る。FIG. 2 is a diagram showing a relationship between a surface roughness Ra and a peeling rate.
Claims (1)
ｎフェライト多結晶とを接合してなる接合フェライトの
製造方法において、厚みの平行度が８μｍ以下かつ表面
粗さＲａが０．１μｍ以下のＭｎ−Ｚｎフェライト単結
晶及びＭｎ−Ｚｎフェライト多結晶の基板を用いて接合
することを特徴とする接合フェライトの製造方法。1. A Mn-Zn ferrite single crystal and Mn-Z.
In a method for producing a bonded ferrite, which is formed by bonding an n-ferrite polycrystal, a substrate of Mn-Zn ferrite single crystal and Mn-Zn ferrite polycrystal having a thickness parallelism of 8 µm or less and a surface roughness Ra of 0.1 µm or less. A method for producing a bonded ferrite, which comprises bonding using
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5274516A JPH07133165A (en) | 1993-11-02 | 1993-11-02 | Production of joined ferrite |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5274516A JPH07133165A (en) | 1993-11-02 | 1993-11-02 | Production of joined ferrite |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07133165A true JPH07133165A (en) | 1995-05-23 |
Family
ID=17542793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5274516A Pending JPH07133165A (en) | 1993-11-02 | 1993-11-02 | Production of joined ferrite |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07133165A (en) |
-
1993
- 1993-11-02 JP JP5274516A patent/JPH07133165A/en active Pending
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