JPH07122586A - Resin-sealed type semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE:To prevent the up and down movement and the inclination of a semi conductor chip with the pressure of molten resin, which is injected into a forming metal mold. CONSTITUTION:A plurality of protruding parts 30 of resin or metal having the height corresponding to the thickness of sealing resin 12 is provided on the surface and/or rear surface of a semiconductor chip, or on the rear surface of the die pad of a lead frame. The end part of the protruding parts 30 are brought into contact with cavity faces 43A and 44A of upper and lower metal molds 43 and 44 of a forming metal mold. Under this state, molten resin M is injected, and resin sealing is performed. Therefore, the stay shift of the semiconductor chip can be suppressed by the presence of a plurality of the protruding parts 300. Therefore, wire breakdown can be prevented, the contact of inner leads and the edge of the semiconductor chip 10 can be avoided and the yield rate is improved.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device (hereinafter referred to as a resin-encapsulated semiconductor device) in which a semiconductor chip on which electronic circuits are integrated and formed (hereinafter simply referred to as "IC chip") is encapsulated with a resin by a transfer molding method. (Hereinafter simply referred to as "IC") and its manufacturing method.

[0002]

2. Description of the Related Art First, a conventional IC and its resin sealing method will be described with reference to FIGS. FIG. 15 is a cross-sectional view of a semiconductor chip, a sealing die and the like showing one resin sealing step of a conventional IC manufacturing method, and FIG.
FIG. 17 is a cross-sectional view of a semiconductor chip, a molding die, etc. for explaining an inconvenient state that occurred in the resin sealing step shown in FIG. 5, and FIG. 17 shows an IC manufactured by the resin sealing step shown in FIG. FIG. 18 is a cross-sectional view of an IC showing a possible defective example, FIG. 18 is a cross-sectional view of an IC showing another possible defective example of the IC manufactured by the resin sealing step shown in FIG. 15, and FIG. FIG. 2 is a cross-sectional view showing a resin sealing step of another method for manufacturing an IC according to the technology.
0 is I manufactured by the resin sealing process shown in FIG.
FIG. 21 is a cross-sectional view of FIG. 21C, and FIG. 21 shows a resin-sealed semiconductor device manufactured by the manufacturing method of the present invention and a resin-sealed semiconductor device manufactured by the conventional manufacturing method shown in FIG. 9 is a graph showing a comparison of changes in data holding voltage depending on the presence or absence of external light irradiation when a memory device is mounted as a chip.

Conventional resin encapsulation of an IC is usually performed by using a molding die as shown in FIG. This molding die is composed of an upper die 1 and a lower die 2, and an IC chip 10 sandwiched between two upper and lower dies 1 and 2 is sealed in a resin-molded package having a predetermined shape. It is composed of cavities 1A and 2A which are hollow portions for the purpose, and a gate portion 4 which is an injection port from the runner portion 3 which is a passage of the molten resin to each cavity 1A and 2A. Reference numeral 13 indicates a wire such as a gold wire, and reference numeral 14 indicates a part of the lead frame.

When resin molding is performed with such a molding die, the molten sealing resin is injected from the gate portion 4 and the runner portion 3 on one side of the cavities 1A and 2A. At the time of injecting the molten resin, the IC chip 10 and a semiconductor chip mounting portion (hereinafter, referred to as a die pad) 11 on which the IC chip 10 is mounted 11
However, as shown in FIG. 16, the pressure of the injected molten resin M may cause a so-called stay shift in which the molten resin M moves up and down or tilts from the designed position.

Particularly, in recent years, the degree of integration of electronic circuits has increased,
The area of the IC chip 10 also increases accordingly, and
The area of the die pad 11 is also becoming larger than before. On the other hand, the number of pins of the IC is increasing, the pitch between the external leads is narrowing, and the width of the support bar that suspends the internal leads and the die pad 11 is narrowing accordingly.
And it is getting longer. With such a structure, the IC chip 10 and the die pad 11 are stay-shifted even with a slight resin pressure.

Furthermore, in an IC having a floating chip structure, which is being developed for the purpose of thinning in recent years, since the die pad 11 does not exist in the lead frame, the stay shift of this chip has the die pad 11. Occurs more frequently, by comparison.

When the stay shift of the IC chip 10 and its die pad 11 is severe, 1. Above the IC chip 10 or below the die pad 11 (in the case of a floating chip structure, the IC chip 10
1. Since the space below the bottom) in which the sealing resin is enclosed becomes narrow, the fluidity of the molten resin M deteriorates, and unfilled or voids are generated on the surface of the injected molten resin M. 2. The balance of the vertical cross-sectional structure of the IC is lost, and the IC package is warped due to the difference in the coefficient of thermal expansion between the internal constituent materials. Furthermore, especially when the IC chip 10 is raised upward, as shown by reference numeral 3A in FIG.
Wire 13 for bonding between the lead and the lead 14
Exposed on the surface of the sealing resin 12. Further, when the position of the bonding point on the IC chip 10 rises, the wire 13 falls down and touches the edge portion of the IC chip 10 as shown by reference numeral 13B in FIG. Further, as shown in 13C of FIG. 18, the wire 13 is pulled and broken, which causes various problems.

[0008]

In order to suppress the stay shift which causes such a fatal defect, Japanese Patent Application Laid-Open No. 4 (1998)-
7848, the invention disclosed in Japanese Patent Laid-Open No. 3-9538, or the patent application No. 4 filed by the applicant on July 13, 1992.
In the invention described in US Pat. No. 184,854, as shown in FIG. 17, in an IC molding die, an upper die 1 and a lower die 2 are used.
A fixed or movable up-and-down movement prevention pin 16 for sandwiching and fixing the IC chip 10 is provided. Japanese Patent Laid-Open No. 4-7
In the invention disclosed in 848, as shown in FIG.
The pin mark 17 remains on the surface of the IC package 10, and depending on the case, the thickness of the resin at that portion, particularly on the surface side of the IC chip 10, becomes thin, or the surface of the IC chip 10 is exposed. May be.

When the IC is in such a state,
The following matters will be a problem. That is, A. Since the pin mark 17 remains on the surface of the sealing resin 12,
It becomes a cosmetic problem. B. The mechanical strength of the sealing resin 12 is reduced. C. Moisture or the like penetrates into the sealing resin 12 through the pin traces 17 and reduces the reliability of the IC. D. The resin on the IC chip 10 is extremely thin at the portion of the pin mark 17, and the surface of the IC chip 10 is exposed in some cases, so that the light from the outside that enters from here is the IC. The light may reach the surface of the chip 10 and the electrical energy of the light may affect the electrical characteristics of the IC. For example, if the IC is a memory device,
As indicated by the dotted line B in FIG. 17, the data holding voltage rises and the data stored in the memory device disappears. If this happens, the original function of the IC will be lost and normal operation will not be performed.

As described above, when the pin trace 17 remains on the surface of the sealing resin 12, a new problem occurs, and in order to eliminate this, the applicant filed an application on February 17, 1993. In the invention of Japanese Patent Application No. 5-52890, the pin traces remaining on the package surface are filled with resin or metal to solve the above problems. In addition, JP-A-3-953
8 or the invention disclosed in Japanese Patent Application No. 4-184854 filed by the applicant on July 13, 1992, the protrusion pin of the molding die is made movable, and the timing is adjusted at the time of resin sealing. While pulling in this pin, IC
No trace of pins is left on the surface of the package 12.

However, in the embodiments of these inventions, basically, when the resin is sealed, the vertical movement preventing pin of the molding die is IC.
Often comes into contact with the surface of the chip 10, which is why
The surface of the IC chip may be damaged. For example,
If the damaged portion due to the vertical movement prevention pin is the passivation film on the uppermost layer of the surface of the IC chip, the invasion of water or impurity ions from the damaged portion causes
The underlying aluminum wiring may be corroded. Further, when the damage itself further reaches the internal aluminum wiring or the like, a shift of the wiring or a structural defect may cause a leak current or a short circuit phenomenon. When such a phenomenon occurs, the IC no longer operates normally.

[0012]

Therefore, the IC of the present invention
In the case of a lead frame having a die pad, only on the front surface of the semiconductor chip, or on the back surface of the die pad, and in the case of a lead frame having a floating chip structure, only on the front surface of the semiconductor chip,
Alternatively, a plurality of protrusions having a practical minimum height are formed on the back surface of the semiconductor chip. Then, a lead frame on which the semiconductor chip is mounted is arranged at a predetermined position of the cavity of the molding die, the upper and lower dies are fastened, and the vertical movement of the semiconductor chip is restricted within the cavity by the protrusion. The above problem was solved by injecting the molten sealing resin in such a state into a molding die to obtain an IC.

[0013]

Therefore, I existing in the cavity of the molding die is
The movement of the C chip is regulated by the plurality of protrusions even if the IC chip is moved up or down due to a difference in speed of the flow of the molten resin injected into the molding die. Will be done. Then, although a slight boundary is formed between the protrusion and the sealing resin, holes or burrs, which are seen in the conventional technique, do not remain on the surface of the sealing resin of the IC. Further, when the surface is sealed with the molten resin, the surface of the IC chip is not damaged by the pins or the like provided in the molding die, so that the function of the IC itself is not impaired.

[0014]

Embodiments of the IC and the method of manufacturing the same according to the present invention will be described below with reference to FIGS. FIG. 1 is a state before resin sealing for obtaining an IC according to a first embodiment of the present invention, showing a structure in which a semiconductor chip is mounted on a lead frame, and FIG. 1A is a sectional view thereof. FIG. 2B is a partial perspective view thereof, and FIG. 2 is a cross-sectional view showing a state where the molten resin is flown halfway while the IC mounted on the lead frame shown in FIG. 1 is housed in a molding die. And FIG. 3 shows the first embodiment of the present invention obtained by resin sealing in the state of FIG.
3 is a cross-sectional view of the TAB IC of FIG.

FIG. 4 is a sectional view showing a structure in which a semiconductor chip is mounted on a lead frame in a state before resin encapsulation for obtaining an IC which is a second embodiment of the present invention. 5 is a cross-sectional view showing a state in which the IC mounted on the lead frame shown in FIG. 4 is housed in a molding die and the molten resin is flown halfway, and FIG. The second T of the present invention obtained by resin-sealing
It is sectional drawing of AB type IC.

Furthermore, FIG. 7 shows a state before resin encapsulation for obtaining an IC according to a third embodiment of the present invention, in which a protrusion is formed on a semiconductor chip mounted on a lead frame. 8 is a cross-sectional view showing a process, FIG. 8 is a cross-sectional view showing a second process following the process shown in FIG. 7, and FIG. 9 is a cross-sectional view showing another method of forming a protrusion on a semiconductor chip. FIG. 10 is a cross-sectional view of a semiconductor chip having protrusions formed in the steps of FIGS. 7 to 9 housed in a molding die, and FIG. It is sectional drawing of the 3rd IC of this invention obtained by stopping.

Further, FIG. 12 shows a fourth embodiment of the present invention.
FIG. 13 is a cross-sectional view showing a first step of forming protrusions on a semiconductor chip mounted on a lead frame in a state before resin sealing for obtaining an IC which is the embodiment of FIG. FIG. 14 is a cross-sectional view showing a state in which a semiconductor chip having protrusions formed therein is housed in a molding die, and FIG.
It is sectional drawing of 4th IC of this invention obtained by completely resin-sealing from the state of 3. The same components as those of the conventional technique shown in FIGS. 15 to 20 are designated by the same reference numerals,
Detailed description thereof will be omitted.

First, a first embodiment of the present invention will be described with reference to FIGS. A die padless lead frame 20 is used in the embodiment of FIG. 1, and inner leads 21 and outer leads 22 made of copper or a copper alloy are held by an insulating tape 23 made of polyimide. 1 shows a structure for joining the tip portion of the inner lead 21 to the electrode pad 15 formed of aluminum or the like on the electrode surface of the IC chip 10 to obtain a TAB type IC.

In this embodiment, the columnar protrusions 30 having a predetermined height are adhered to a plurality of places on the surface of the IC chip 10 avoiding the electrode pads 15, for example, four corners of the IC chip 10. Glue at 18. As a method of adhering the protrusions 30, the adhesive 18 is dropped onto the surface of the IC chip 10 in advance by a dispenser, and the protrusions 3 are later applied to the portions.
There is a method of mounting 0, or a method of applying the adhesive 18 to the end surface of the protrusion 30 in advance and mounting it on the surface of the IC chip 10.

Next, as shown in FIG.
The C chip 10 is housed in the upper and lower molding dies, fastened, and resin-sealed. This molding die is composed of an upper die 40 and a lower die 41, and the surface of the upper die 40 with respect to the cavity is finished to be smooth, and the bottom surface of the cavity 41A of the lower die 41 has the above-mentioned plurality of dies. A fixing pin 42 is integrally formed at a position facing the protrusion 30.

Therefore, when the upper mold 40 and the lower mold 41 are fastened, the end surface of the protrusion 30 contacts the smooth surface of the upper mold 40, and the fixing pin 42 of the lower mold 41 is fixed to the IC chip 10.
It comes into contact with the back surface of. IC chip 1
When the molten resin M is injected from one side of the molding die with 0 fixed, even if the flowing pressure of the molten resin M is applied, I
The C chip 10 stays at a predetermined position and is well resin-sealed.

As a result, as shown in FIG.
The AB type IC 50 can be taken out from the molding die. The IC 50 shown in FIG. 3 is obtained by cutting the outer lead 22 into a predetermined length and bending it. The fixing pin 42 is provided on the lower surface sealing resin 12 of the IC 50.
Although the concave pin traces 17 of No. 1 are generated, the circuit pattern is not formed here because it is the back surface of the IC 50.
The function of C is not impaired, and there is no problem of reliability. When such pin traces 17 cause inconveniences due to problems such as the appearance of the IC, the problem can be solved by filling the pin traces 17 with potting resin or metal.

Next, an IC according to a second embodiment of the present invention
The manufacturing method of 51 (FIG. 6) will be described with reference to FIGS. The lead frame 20A used in this embodiment is disclosed in Japanese Patent Application Laid-Open No. 148856/1993, which was filed by the applicant of the present application and published on June 25, 1991, and the inner frame is made of copper or copper alloy. The lead 21 and the outer lead 22 are joined together via an aluminum joining layer 24, and an aluminum bump 25 is formed at the tip of the inner lead 21. As shown in FIG.
The aluminum bump 25 of No. 2 is bonded to the electrode pad 15 formed of aluminum or the like on the surface of the IC chip 10, and the TAB is formed.
3 shows a configuration for obtaining a type IC. In this embodiment, the protrusions 30 having a predetermined length are fixed by the adhesive 18 near the corners on the front and back sides of the IC chip 10, for example, at four places on one side, for a total of eight places.

As shown in FIG. 5, such an IC chip 10 is housed and fastened in a molding die including an upper die 43 and a lower die 44. In this case, the end surface of the protrusion 30 on the front surface of the IC chip 10 is in contact with the cavity surface 43A of the upper mold 43, and the end surface of the protrusion 30 on the rear surface of the IC chip 10 is in contact with the cavity surface 44A of the lower mold 44. Become. When the molten resin M is injected from one of the molding dies while the IC chip 10 is fixed in this way, the IC chip 10 stays in a predetermined position even if the flowing pressure of the molten resin M is applied, and the IC chip 10 is kept. Of the inner lead 21 and the edge of the IC chip 10 can be reliably prevented, and good resin sealing can be achieved.

As a result, as shown in FIG.
The AB type IC 51 can be taken out from the molding die. The IC 51 shown in FIG. 6 is obtained by cutting the outer lead 22 into a predetermined length and bending it.

The protrusion 30 used in the above-mentioned two embodiments is made of resin, and the material which the protrusion 30 and the adhesive 18 must have is preferably a material satisfying the following conditions. 1. Do not soften or deform at the molding temperature. 2. After molding, the coefficient of linear expansion should be almost the same as that of the sealing resin. 3. Good adhesion to the sealing resin. 4. The protrusions should be black with a high light-shielding property.

The resin used for the protrusions 30 satisfying this condition is preferably a thermosetting resin such as an epoxy resin used for the sealing resin 12. A thermoplastic resin such as PPS may be used as long as it has a melting point of 200 ° C. or higher. Also,
The adhesive 18 is also preferably an epoxy resin adhesive. In order to improve the light-shielding property, a black pigment may be added to the epoxy resin of the protrusion.

In the above-mentioned two embodiments, the resin of a small column formed in advance is adhered to the IC chip with the adhesive to form the protrusion, but the method of forming the protrusion more efficiently can be used. Will be described below. First, an IC 52 (FIG. 11) which is a third embodiment of the present invention and a method for manufacturing the IC 52 will be described with reference to FIGS. FIG. 7 shows a lead frame having the IC chip 10 of the present invention mounted on a stage 61. The IC chip 10 is adhered and fixed to the die pad 11 of a normal lead frame composed of the die pad 11, a plurality of leads 14 formed on the periphery of the die pad 11 and other components by silver paste or the like, and A plurality of electrode pads 15 formed on the surface of the IC chip 10 are connected to the inner ends of the leads 14 by wires 13.

The potting resin 31 is dropped onto the surface of the IC chip 10 in such a state using the nozzle 60. After that, heat treatment is applied to the potting resin 31.
Cure. The height of the cured protrusion-shaped resin (hereinafter, simply referred to as “protrusion 31A”) is equal to the required height of the sealing resin 12 above the IC chip 10 and below the die pad 11 (see FIG.
The minimum thickness of 1) is secured and each sealing resin 1
The thickness may be the same as or slightly thinner than the designed thickness of 2. The height of the protrusions 31A is adjusted according to the viscosity of the potting resin 31 to be applied and the like.

When the potting resin 31 is dropped on the back surface of the die pad 11 (the IC chip 10 in the case of the floating chip structure; the same applies hereinafter), the lead frame may be turned upside down in the same manner as described above. When the protrusion 31A is first formed on the surface of the IC chip 10, it is preferable to use the stage 61A in which the escape 62 is formed as shown in FIG.

Further, resin protrusions 31B are formed on the back surface of the die pad 11 in advance, and thereafter, as shown in FIG. 9, a stage 61B provided with a plurality of escapes 62 is used.
It is also possible to place a lead frame on the stage 61B and insert the potting resin 31 onto the IC chip 10 on which the die pad 11 is mounted while the protrusions 31B are inserted into the clearances 62.

Thereafter, as shown in FIG. 10, the lead frame is sandwiched between the upper mold 1 and the lower mold 2, and the runner portion 3
Also, the molten resin M is injected from the gate portion 4 to perform resin sealing. After the molten resin M is cured, it is taken out from the molding die, and the IC 52 of the present invention as shown in FIG. 11 can be obtained.

Next, the IC 53 of the fourth embodiment of the present invention.
And, a manufacturing method thereof will be described with reference to FIGS. In this embodiment, a metal protrusion 31C having an appropriate height is provided on the surface of the IC chip 10 to prevent stay shift of the IC chip 10. The protrusion 31C is formed by preliminarily removing the metal ball formed at the time of wire bonding by I
A dummy pad (not shown) provided on the surface of the C chip 10 is bonded and used as a protrusion 31C.

First, as shown in FIG. 12, a gold ball 66A is formed at the tip of a gold wire 66, for example, by a wire bonding device 63 including a wire clamper 64, a capillary 65 and the like. After applying an appropriate load to the gold ball 66A and bonding it to the dummy pad,
By opening / closing the wire clamper 64 and moving the capillary 65, the gold ball 66A is cut, and the gold protrusion 31 is cut.
C can be formed on the surface of the IC chip 10. Similarly, such a protrusion 31C is also formed on the back surface of the IC chip 10.
Can be formed. When the protrusion is formed on the back surface of the die pad 11, the method of forming the resin protrusion 31A (31B) in the third embodiment can be applied.

IC in which such a protrusion 31C is formed
As shown in FIG. 13, the chip 10 is housed and fastened in a molding die including an upper die 1 and a lower die 2, and a molten resin M is injected to perform resin sealing. After the molten resin M is cured,
The IC 53 shown in FIG. 14 can be obtained from the molding die.

As in the case of the third embodiment, the height of the gold ball 66A is determined to be the same as the designed thickness of the upper and lower sealing resins, or a value slightly smaller than that. Alternatively, on the contrary, it may be set to a slightly larger value, and as shown in FIG. 13, when sandwiched between the upper and lower molds, the mold ball 66A may be slightly crushed by the mold. This has the advantage that the IC chip 10 and the die pad 11 are more firmly fixed in the mold during resin sealing. In any case, the gold ball 66A of the IC chip 10 can be made to have a predetermined height by adjusting the initial bonding conditions such as the ball diameter and the load.

In the IC 53 of this embodiment, the IC chip 1
The gold balls 66A bonded to the front surface of 0 and the back surface of the die pad 11 may be exposed to the front surface and the back surface of the IC package 12, but there is no problem in reliability. Although the protrusion 31C is formed of gold in this embodiment, copper can be used as the metal when the wire bonding method is used. Furthermore, as the method of forming the metal protrusion on the surface of the IC chip 10, in addition to the method using the conventional wire bonding technique, a forming method using the vapor deposition method, the sputtering method, the plating method, or the like can be applied. You can

[0038]

Effect of the Invention As described above, according to the IC of the present invention and the manufacturing method thereof, it is possible to control the position of the IC chip inside the package which is the sealing resin. As a result, 1) unfilling of the package surface and generation of voids 2) warpage of the package 3) exposure of the bonding wire to the package surface 4) short circuit failure (bonding wire touches the edge of the chip) 5) bonding wire Problems such as disconnection can be reduced. Also,

2. Position control of IC chip
In particular, it has become possible to do this without providing a vertical movement prevention pin on the die. As a result, no pin traces remain on the resin package. As a result, 1) the appearance problem of the package is reduced. 2) The decrease in the mechanical strength of the package can be reduced. 3) The intrusion of moisture into the package is reduced, and the reliability of the IC is reduced. 4) Since the incidence of light from the outside is suppressed, the electrical characteristics of the IC are not adversely affected (see the solid line A in FIG. 21). And the like. Furthermore,

3. The position control of the IC chip did not scratch the surface of the IC chip due to the protrusions on the mold. Therefore, it is possible to reduce the inconvenience such as impairing the original function of the IC.

[Brief description of drawings]

FIG. 1 shows a structure in which a semiconductor chip is mounted on a lead frame in a state before resin sealing for obtaining an IC which is a first embodiment of the present invention, and FIG. FIG. 2B is a partial perspective view thereof.

FIG. 2 is an IC mounted on the lead frame shown in FIG.
FIG. 6 is a cross-sectional view showing a state in which the molten resin is flown halfway while being stored in a molding die.

FIG. 3 is a sectional view of a first TAB IC of the present invention obtained by resin sealing in the state of FIG.

FIG. 4 is a cross-sectional view showing a structure in which a semiconductor chip is mounted on a lead frame in a state before resin sealing for obtaining an IC which is a second embodiment of the present invention.

5 is an IC mounted on the lead frame shown in FIG.
FIG. 6 is a cross-sectional view showing a state in which the molten resin is flown halfway while being stored in a molding die.

6 is a sectional view of a second TAB type IC of the present invention obtained by completely resin-sealing from the state of FIG.

FIG. 7 is a cross-sectional view showing a first step of forming protrusions on a semiconductor chip mounted on a lead frame in a state before resin encapsulation for obtaining an IC which is a third embodiment of the present invention. It is a figure.

8 is a cross-sectional view showing a second step following the step shown in FIG.

FIG. 9 is a cross-sectional view showing another method of forming protrusions on a semiconductor chip.

FIG. 10 is a cross-sectional view of a state in which a semiconductor chip having protrusions formed in the steps of FIGS. 7 to 9 is housed in a molding die.

11 is a cross-sectional view of a third IC of the present invention obtained by completely resin-sealing from the state of FIG.

FIG. 12 is a sectional view showing a first step of forming protrusions on a semiconductor chip mounted on a lead frame in a state before resin encapsulation for obtaining an IC according to a fourth embodiment of the present invention. It is a figure.

FIG. 13 is a cross-sectional view showing a state in which a semiconductor chip having protrusions formed in the step of FIG. 12 is housed in a molding die.

FIG. 14 is a sectional view of a fourth IC of the present invention obtained by completely resin-sealing from the state of FIG.

FIG. 15 is a cross-sectional view of a semiconductor chip, a sealing die, and the like, showing a resin sealing step of a conventional IC manufacturing method.

16 is a cross-sectional view of a semiconductor chip, a molding die, etc. for explaining an inconvenient state that has occurred in the resin sealing step shown in FIG.

FIG. 17 is a cross-sectional view of an IC showing a possible defect in the IC manufactured by the resin sealing step shown in FIG.

FIG. 18 is a cross-sectional view of an IC showing another possible defect in the IC manufactured by the resin sealing step shown in FIG.

FIG. 19 is a cross-sectional view showing a resin sealing step of another method of manufacturing an IC of the related art.

20 is a cross-sectional view of an IC manufactured by the resin sealing process shown in FIG. It is sectional drawing which showed the manufacturing process of the conventional resin sealing type semiconductor device.

FIG. 21 shows a resin-sealed semiconductor device manufactured by the manufacturing method of the present invention and a resin-sealed semiconductor device manufactured by the conventional manufacturing method shown in FIG.
6 is a graph showing a comparison of changes in data holding voltage depending on the presence or absence of external light irradiation when a memory device is mounted as a semiconductor chip.

[Explanation of symbols]

 1 Upper Mold 1A Cavity 2A Cavity 2 Lower Mold 10 Semiconductor Chip (IC Chip) 11 Die Pad 12 Sealing Resin 13 Wire 14 Lead 15 Electrode Pad 17 Pin Trace 18 Adhesive 20 Lead Frame 21 Inner Lead 22 Outer Lead 23 Insulating Tape 24 Aluminum Bonding Layer 25 Aluminum Bump 30 Projection 31 Potting Resin 31A Projection 31B Projection 31C Projection 40 Upper Mold 41 Lower Mold 41A Cavity Surface 42 Fixing Pin 43 Upper Mold 43A Cavity Surface 44 Lower Mold 44A Cavity Surface 50 TAB type IC 51 TAB type IC 52 IC 53 IC 60 nozzle 61 stage 61A stage 62 escape 63 wire bonding device 64 wire clamper 65 capillary 66 gold wire 66A gold ball M molten resin

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[Procedure amendment]

[Submission date] January 7, 1994

[Procedure Amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0018

[Correction method] Change

[Correction content]

First, a first embodiment of the present invention will be described with reference to FIGS. A die padless lead frame 20 is used in the embodiment of FIG. 1, and inner leads 21 and outer leads 22 made of copper or a copper alloy are held by an insulating tape 23 made of polyimide. 1 shows a structure for joining the tip portion of the inner lead 21 to a bump 26 formed on the electrode surface of the IC chip 10 with gold or the like to obtain a TAB type IC.

[Procedure Amendment 2]

[Document name to be amended] Statement

[Name of item to be corrected] Brief description of the drawing

[Correction method] Change

[Correction content]

[Brief description of drawings]

FIG. 1 shows a structure in which a semiconductor chip is mounted on a lead frame in a state before resin sealing for obtaining an IC which is a first embodiment of the present invention, and FIG. FIG. 2B is a partial perspective view thereof.

FIG. 2 is an IC mounted on the lead frame shown in FIG.
FIG. 6 is a cross-sectional view showing a state in which the molten resin is flown halfway while being stored in a molding die.

FIG. 3 is a sectional view of a first TAB IC of the present invention obtained by resin sealing in the state of FIG.

FIG. 4 is a cross-sectional view showing a structure in which a semiconductor chip is mounted on a lead frame in a state before resin sealing for obtaining an IC which is a second embodiment of the present invention.

5 is an IC mounted on the lead frame shown in FIG.
FIG. 6 is a cross-sectional view showing a state in which the molten resin is flown halfway while being stored in a molding die.

6 is a sectional view of a second TAB type IC of the present invention obtained by completely resin-sealing from the state of FIG.

FIG. 7 is a cross-sectional view showing a first step of forming protrusions on a semiconductor chip mounted on a lead frame in a state before resin encapsulation for obtaining an IC which is a third embodiment of the present invention. It is a figure.

8 is a cross-sectional view showing a second step following the step shown in FIG.

FIG. 9 is a cross-sectional view showing another method of forming protrusions on a semiconductor chip.

FIG. 10 is a cross-sectional view of a state in which a semiconductor chip having protrusions formed in the steps of FIGS. 7 to 9 is housed in a molding die.

11 is a cross-sectional view of a third IC of the present invention obtained by completely resin-sealing from the state of FIG.

FIG. 12 is a sectional view showing a first step of forming protrusions on a semiconductor chip mounted on a lead frame in a state before resin encapsulation for obtaining an IC according to a fourth embodiment of the present invention. It is a figure.

FIG. 13 is a cross-sectional view showing a state in which a semiconductor chip having protrusions formed in the step of FIG. 12 is housed in a molding die.

FIG. 14 is a sectional view of a fourth IC of the present invention obtained by completely resin-sealing from the state of FIG.

FIG. 15 is a cross-sectional view of a semiconductor chip, a sealing die, and the like, showing a resin sealing step of a conventional IC manufacturing method.

16 is a cross-sectional view of a semiconductor chip, a molding die, etc. for explaining an inconvenient state that has occurred in the resin sealing step shown in FIG.

FIG. 17 is a cross-sectional view of an IC showing a possible defect in the IC manufactured by the resin sealing step shown in FIG.

FIG. 18 is a cross-sectional view of an IC showing another possible defect in the IC manufactured by the resin sealing step shown in FIG.

FIG. 19 is a cross-sectional view showing a resin sealing step of another method of manufacturing an IC of the related art.

20 is a cross-sectional view of an IC manufactured by the resin sealing process shown in FIG. It is sectional drawing which showed the manufacturing process of the conventional resin sealing type semiconductor device.

FIG. 21 shows a resin-sealed semiconductor device manufactured by the manufacturing method of the present invention and a resin-sealed semiconductor device manufactured by the conventional manufacturing method shown in FIG.
6 is a graph showing a comparison of changes in data holding voltage depending on the presence or absence of external light irradiation when a memory device is mounted as a semiconductor chip.

[Description of symbols] 1 upper mold 1A cavity 2A cavity 2 lower mold 10 semiconductor chip (IC chip) 11 die pad 12 sealing resin 13 wire 14 lead 15 electrode pad 17 pin trace 18 adhesive 20 lead frame 21 inner lead 22 Outer lead 23 Insulation tape 24 Aluminum bonding layer 25 Aluminum bump 26 Bump 30 Projection 31 Potting resin 31A Projection 31B Projection 31C Projection 40 Upper mold 41 Lower mold 41A Cavity surface 42 Fixing pin 43 Upper mold 43A Cavity surface 44 Lower Mold 44A Cavity Surface 50 TAB Type IC 51 TAB Type IC 52 IC 53 IC 60 Nozzle 61 Stage 61A Stage 62 Escape 63 Wire Bonding Device 64 Wire Clamper 65 Capillary 66 Gold wire 66A Gold ball M Molten resin ─────────────────────────────────────────── ───────────

[Procedure amendment]

[Submission date] January 10, 1994

[Procedure Amendment 1]

[Document name to be corrected] Drawing

[Name of item to be corrected] Figure 1

[Correction method] Change

[Correction content]

[Figure 1]

[Procedure Amendment 2]

[Document name to be corrected] Drawing

[Name of item to be corrected] Figure 2

[Correction method] Change

[Correction content]

[Fig. 2]

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Makoto Ito 6-735 Kitashinagawa, Shinagawa-ku, Tokyo Sony Corporation

Claims (6)

[Claims] 1. A protrusion such as a resin or metal having a height corresponding to the thickness of the sealing resin is provided on the front surface and / or the back surface of the semiconductor chip or on the back surface of the semiconductor chip mounting portion of the lead frame. A characteristic resin-encapsulated semiconductor device. 2. A protrusion such as a resin or metal having a predetermined height is provided on at least a surface of a semiconductor chip, and the protrusion is provided when the semiconductor chip is mounted on a molding die including upper and lower dies together with a plurality of outer leads. Attach the end of the object so that it abuts the cavity surface of the upper die of this molding die, inject the molten resin into the molding die while regulating the vertical movement of the semiconductor chip, and seal the semiconductor chip with the resin. A method for manufacturing a resin-encapsulated semiconductor device, which comprises stopping. 3. A resin in which protrusions such as resin or metal having a predetermined height are provided on the surface of the semiconductor chip, while a plurality of vertical movement preventing pins having a predetermined height are formed on the cavity surface of the lower mold. Using the sealing mold, the semiconductor chip was fixed such that the end of the protrusion of the semiconductor chip was brought into contact with the cavity surface of the upper mold of the resin sealing mold. The semiconductor chip is mounted on a molding die so that the end of the vertical movement preventing pin of the lower die abuts on the back surface of the semiconductor chip mounting portion or the back surface of the semiconductor chip, and the vertical movement of the semiconductor chip is performed. A method for manufacturing a resin-encapsulated semiconductor device, the method comprising resin-encapsulating while controlling resin. 4. The resin encapsulation according to claim 3, wherein the projection is formed on at least the surface of the semiconductor chip by dropping a potting resin using a nozzle. Type semiconductor device manufacturing method. 5. The protrusion according to claim 3, wherein a wire is formed into a metal ball to form the protrusion when forming the protrusion on at least a surface of a semiconductor chip. A method of manufacturing a resin-encapsulated semiconductor device. 6. The former protrusion when forming a protrusion on one surface of a semiconductor chip or on a semiconductor chip mounting portion and further forming a protrusion on the other surface of the semiconductor chip or on a semiconductor chip mounting portion. The resin-sealed mold characterized in that the latter projection is formed while holding the semiconductor chip on a stage in which a concave portion is formed to avoid the projection already formed, with the surface on which the projection is formed facing downward. Manufacturing method of semiconductor device.