JPH0710499Y2 - 可変容量ダイオ−ド装置 - Google Patents

可変容量ダイオ−ド装置

Info

Publication number
JPH0710499Y2
JPH0710499Y2 JP1986018503U JP1850386U JPH0710499Y2 JP H0710499 Y2 JPH0710499 Y2 JP H0710499Y2 JP 1986018503 U JP1986018503 U JP 1986018503U JP 1850386 U JP1850386 U JP 1850386U JP H0710499 Y2 JPH0710499 Y2 JP H0710499Y2
Authority
JP
Japan
Prior art keywords
semiconductor substrate
diffusion layer
diode device
junction
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1986018503U
Other languages
English (en)
Japanese (ja)
Other versions
JPS62131455U (enrdf_load_html_response
Inventor
健 笠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toko Inc
Original Assignee
Toko Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toko Inc filed Critical Toko Inc
Priority to JP1986018503U priority Critical patent/JPH0710499Y2/ja
Publication of JPS62131455U publication Critical patent/JPS62131455U/ja
Application granted granted Critical
Publication of JPH0710499Y2 publication Critical patent/JPH0710499Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
JP1986018503U 1986-02-12 1986-02-12 可変容量ダイオ−ド装置 Expired - Lifetime JPH0710499Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986018503U JPH0710499Y2 (ja) 1986-02-12 1986-02-12 可変容量ダイオ−ド装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986018503U JPH0710499Y2 (ja) 1986-02-12 1986-02-12 可変容量ダイオ−ド装置

Publications (2)

Publication Number Publication Date
JPS62131455U JPS62131455U (enrdf_load_html_response) 1987-08-19
JPH0710499Y2 true JPH0710499Y2 (ja) 1995-03-08

Family

ID=30812230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986018503U Expired - Lifetime JPH0710499Y2 (ja) 1986-02-12 1986-02-12 可変容量ダイオ−ド装置

Country Status (1)

Country Link
JP (1) JPH0710499Y2 (enrdf_load_html_response)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7253109B2 (en) 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
KR20010032498A (ko) 1997-11-26 2001-04-25 조셉 제이. 스위니 손상없는 스컵쳐 코팅 증착

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54136964U (enrdf_load_html_response) * 1978-03-16 1979-09-22

Also Published As

Publication number Publication date
JPS62131455U (enrdf_load_html_response) 1987-08-19

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