JPH0677604A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH0677604A JPH0677604A JP22714492A JP22714492A JPH0677604A JP H0677604 A JPH0677604 A JP H0677604A JP 22714492 A JP22714492 A JP 22714492A JP 22714492 A JP22714492 A JP 22714492A JP H0677604 A JPH0677604 A JP H0677604A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- semiconductor laser
- light receiving
- laser device
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体レーザ装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device.
【０００２】[0002]
【従来の技術】近年、半導体レーザ装置の改良が数多く
なされているいが、その中で例えば本出願人が特願平４
−１３２５１３号にて出願した半導体レーザ装置を図６
及び図７に示す。図６はこの半導体レーザ装置の上面図
であり、図７は図６のＡ−Ａ断面図である。2. Description of the Related Art In recent years, many improvements have been made to a semiconductor laser device.
The semiconductor laser device filed in No. 132513 is shown in FIG.
7 and FIG. FIG. 6 is a top view of this semiconductor laser device, and FIG. 7 is a sectional view taken along line AA of FIG.
【０００３】これらの図に於て、ＰＩＮ構造を成したシ
リコン系結晶に表面電極１０、１１と裏面電極１２を設
けた受光素子９は導電性接着剤を介してリード１上に固
着されている。半導体レーザ素子１４は受光素子９の表
面電極１０上に導電性接着剤を介して固着されている。
前記表面電極１０とリード１との間、前記半導体レーザ
素子１４の表面と他のリード７との間、及び表面電極１
１と更に他のリード８との間はそれぞれ金属細線１６、
１７、１８にて電気的に接続されている。In these figures, a light receiving element 9 in which a front surface electrode 10 or 11 and a back surface electrode 12 are provided on a silicon crystal having a PIN structure is fixed onto a lead 1 via a conductive adhesive. . The semiconductor laser element 14 is fixed onto the surface electrode 10 of the light receiving element 9 via a conductive adhesive.
Between the surface electrode 10 and the lead 1, between the surface of the semiconductor laser device 14 and another lead 7, and the surface electrode 1
A thin metal wire 16 is provided between the lead wire 1 and the other lead 8, respectively.
It is electrically connected at 17 and 18.
【０００４】前記受光素子９と半導体レーザ素子１４の
周囲には前記リード１、７、８を固定する樹脂性絶縁枠
２０が設けられている。また、前記半導体レーザ素子１
４の後面近傍から受光素子９の受光面１３には透光性樹
脂１９により覆われている。A resin insulating frame 20 for fixing the leads 1, 7 and 8 is provided around the light receiving element 9 and the semiconductor laser element 14. Further, the semiconductor laser device 1
The light receiving surface 13 of the light receiving element 9 is covered with a transparent resin 19 from the vicinity of the rear surface of the light receiving element 4.
【０００５】しかしながら、斯る構造の半導体レーザ装
置では、リード１が放熱フィンの役割も兼ねているが、
熱を発生する半導体レーザ素子１４から熱伝導される受
光素子９の下側に位置するリード１の下面が絶縁枠２０
に覆われているので、該半導体レーザ素子１４から熱が
放熱されにくく、特性劣化や破損が生じるといった問題
があった。However, in the semiconductor laser device having such a structure, the lead 1 also serves as a radiation fin.
The lower surface of the lead 1 located below the light receiving element 9 that is thermally conducted from the semiconductor laser element 14 that generates heat is the insulating frame 20.
Since the semiconductor laser element 14 is covered with the heat, it is difficult to dissipate heat from the semiconductor laser element 14, and there is a problem that characteristic deterioration or damage occurs.
【０００６】この問題を解決するためには、リード１の
下面の絶縁枠２０を取り除き、リード１の下面を露出し
た構造を採用すればよいが、斯る構造ではリード１又は
リード７、８と絶縁枠２０との接着強度等、装置の機械
的強度が弱くなる。また受光素子９の下側に位置するリ
ード１の下面の絶縁枠２０のみを取り除いて露出した構
造を採用することも考えあられるが、このリード１の露
出した部分と放熱板等を密着させることが困難であり、
放熱効果が十分に得られないといった問題があった。In order to solve this problem, the structure in which the insulating frame 20 on the lower surface of the lead 1 is removed and the lower surface of the lead 1 is exposed is adopted. In such a structure, however, the lead 1 or the leads 7 and 8 are formed. The mechanical strength of the device, such as the adhesive strength with the insulating frame 20, is weakened. It is also possible to adopt a structure in which only the insulating frame 20 on the lower surface of the lead 1 located below the light receiving element 9 is removed and exposed. However, the exposed portion of the lead 1 and the heat dissipation plate or the like should be brought into close contact with each other. Is difficult and
There was a problem that the heat dissipation effect could not be obtained sufficiently.
【０００７】[0007]
【発明が解決しようとする課題】本発明は上述の問題点
を鑑み成されたものであり、リードと絶縁枠との接着強
度を損なうことなく、放熱効果に優れた半導体レーザ装
置を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and provides a semiconductor laser device excellent in heat dissipation effect without impairing the adhesive strength between the lead and the insulating frame. With the goal.
【０００８】[0008]
【課題を解決するための手段】本発明の半導体レーザ装
置は、前端部に凹部を持つと共に後端部に端子部を持つ
第１リードと、該第１リードの凹部の底面上に載置され
た受光素子と、その受光素子に近接して前記凹部上に配
置されかつ前方に出射面を有する半導体レーザ素子と、
前記第１リードと離間しかつ該第１リードの端子部と平
行に配置された第２、第３リードと、前記半導体レーザ
素子の出射面と前記凹部下面を露出し且つ前記各リード
を挟持するように形成された絶縁枠とを具備したことを
特徴とする。A semiconductor laser device of the present invention is mounted on a first lead having a recess at the front end and a terminal at the rear end, and on the bottom surface of the recess of the first lead. A light receiving element, and a semiconductor laser element that is disposed on the recess in the vicinity of the light receiving element and has an emission surface in the front,
The second and third leads, which are spaced apart from the first lead and arranged in parallel with the terminal portion of the first lead, the emission surface of the semiconductor laser device and the lower surface of the recess are exposed, and the leads are sandwiched. And an insulating frame formed as described above.
【０００９】[0009]
【作用】斯る構造では、各リードを絶縁枠にて挟持する
ことにより機械的強度に優れると共に半導体レーザ素子
の下側にあるリードの凹部下面を露出させることにより
十分な放熱効果が得られる。In such a structure, each lead is sandwiched by the insulating frame so as to have excellent mechanical strength, and by exposing the lower surface of the recess of the lead on the lower side of the semiconductor laser device, a sufficient heat radiation effect can be obtained.
【００１０】[0010]
【実施例】以下、本発明の第１実施例を図面を参照して
説明する。図１は本実施例に係る半導体レーザ装置の上
面図、図２は図１のＡ−Ａ断面図、図３は図１のＢ−Ｂ
断面図、図４は図１中のリードの上面図、図５は図４の
Ｃ−Ｃ断面図である。尚、従来例と同一部分及び対応す
る部分には同一符号を付す。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described below with reference to the drawings. 1 is a top view of the semiconductor laser device according to the present embodiment, FIG. 2 is a sectional view taken along line AA of FIG. 1, and FIG. 3 is taken along line BB of FIG.
4 is a cross-sectional view, FIG. 4 is a top view of the lead in FIG. 1, and FIG. 5 is a cross-sectional view taken along the line CC of FIG. The same parts as those of the conventional example and corresponding parts are designated by the same reference numerals.
【００１１】図において、１はリードで、厚みが例えば
０．２ｍｍ乃至１ｍｍの銅、アルミニウム、または鉄等
の良熱伝導性の電導性材料からなり、切欠部２と矩形部
３と後端部に位置する端子部４から構成され、該矩形部
３の前端部に例えば幅５ｍｍ、長さ３ｍｍ、深さ０．５
〜１ｍｍ程度の凹部６を有している。前記リード１は端
面５にＶ字状の切り欠き部３０、３０が形成されてい
る。尚、リード１の矩形部３には位置決め用の基準とな
るものがあればよく、切り欠き部３０、３０に代えて例
えば矩形部３の両側部にそれぞれ貫通孔を設けてもよ
く、適宜変更可能である。In the figure, reference numeral 1 denotes a lead, which is made of an electrically conductive material having a good thermal conductivity such as copper, aluminum or iron having a thickness of 0.2 mm to 1 mm, and has a notch 2, a rectangular portion 3 and a rear end portion. The terminal portion 4 is located at, and the front end of the rectangular portion 3 has, for example, a width of 5 mm, a length of 3 mm, and a depth of 0.5.
It has a recess 6 of about 1 mm. The lead 1 has V-shaped notches 30 formed on the end surface 5. It should be noted that the rectangular portion 3 of the lead 1 may be any one that serves as a reference for positioning, and instead of the notches 30 and 30, for example, through holes may be provided on both side portions of the rectangular portion 3, respectively. It is possible.
【００１２】受光素子９は例えばＰ−Ｉ−Ｎ構造を成し
たシリコン系結晶に表面電極１０、１１と裏面電極１２
を設けたものであり、ヒートシンクの役割も兼備してい
る。前記表面電極１０と受光素子９の間には図示しない
ＳｉＯ2等からなる絶縁層が形成されており、前記表面
電極１１はｐ型拡散領域からなる受光面１３の一部でオ
ーミック接触して形成されている。この受光素子９はそ
の裏面電極１２が銀ペースト等の導電性接着剤を介して
リード１の前記凹部６の底面上に固着されている。従っ
て、前記リード１の凹部６はこのように少なくとも上記
受光素子９よりも大きな幅と長さを有する必要がある。The light-receiving element 9 is, for example, a silicon-based crystal having a P-I-N structure and made of front electrodes 10, 11 and a back electrode 12.
It also has the role of a heat sink. An insulating layer (not shown) made of SiO 2 or the like is formed between the surface electrode 10 and the light receiving element 9, and the surface electrode 11 is formed in ohmic contact with a part of the light receiving surface 13 formed of a p-type diffusion region. Has been done. The back electrode 12 of the light receiving element 9 is fixed on the bottom surface of the recess 6 of the lead 1 via a conductive adhesive such as silver paste. Therefore, the recess 6 of the lead 1 needs to have a width and length larger than at least the light receiving element 9 as described above.
【００１３】半導体レーザ素子１４は、例えば基板上に
活性層と該活性層を挟むクラッド層からなる発光層が形
成され、上面と下面にそれぞれ電極が形成されている。
半導体レーザ素子１４の両端へき開面上にはそれぞれ反
射膜が形成されており、該両へき開面からそれぞれレー
ザ光が出力される。半導体レーザ素子１４はその出射面
がリード１の端面５の近傍に位置するように、受光素子
９の表面電極１０上に銀ペーストまたは半田等を介して
固着されている。そして、前記リード１の端子部４は例
えば半導体レーザ素子１４のレーザ光出射方向と逆方向
に延びており、また該リード１と離間して対向する位置
に端子部４と平行に銅、アルミニウム、または鉄等の金
属材料からなる別のリード７、８が設けられている。In the semiconductor laser device 14, for example, a light emitting layer including an active layer and a clad layer sandwiching the active layer is formed on a substrate, and electrodes are formed on the upper surface and the lower surface, respectively.
Reflective films are formed on the cleaved surfaces at both ends of the semiconductor laser element 14, and laser beams are output from the cleaved surfaces. The semiconductor laser element 14 is fixed onto the surface electrode 10 of the light receiving element 9 via silver paste or solder so that the emitting surface thereof is located near the end surface 5 of the lead 1. The terminal portion 4 of the lead 1 extends, for example, in the direction opposite to the laser light emitting direction of the semiconductor laser element 14, and at a position facing the lead 1 with a distance therebetween, copper, aluminum, or the like in parallel with the terminal portion 4, Alternatively, other leads 7 and 8 made of a metal material such as iron are provided.
【００１４】金属細線１６、１７、１８はそれぞれ表面
電極１０とリード１との間、半導体レーザ素子１４の表
面と他のリード７との間、表面電極１１と他のリード８
の間を結ぶように配線されている。透光性樹脂１９は例
えばエポキシ樹脂からなり、半導体レーザ素子１４の後
面近傍から受光素子９の受光面１３を一体に覆うように
形成されている。この様に透光性樹脂１９で覆うことに
より、半導体レーザ素子１４の後面からの出射光が透光
性樹脂１９と大気との界面で反射され、受光面１３に確
実に入射するので、受光素子９の受光量が増え、感度が
向上する。The thin metal wires 16, 17 and 18 are respectively between the surface electrode 10 and the lead 1, between the surface of the semiconductor laser device 14 and the other lead 7, and between the surface electrode 11 and the other lead 8.
It is wired so as to connect between them. The translucent resin 19 is made of, for example, an epoxy resin, and is formed so as to integrally cover the light receiving surface 13 of the light receiving element 9 from the vicinity of the rear surface of the semiconductor laser element 14. By thus covering with the translucent resin 19, the light emitted from the rear surface of the semiconductor laser element 14 is reflected at the interface between the translucent resin 19 and the atmosphere and surely enters the light receiving surface 13, so that the light receiving element is provided. The amount of light received at 9 is increased and the sensitivity is improved.
【００１５】絶縁枠５０は例えばポリカーボネート樹脂
またはエポキシ樹脂等からなり、半導体レーザ素子１４
の出射面を露出するように平面略コ字状に、かつリード
１の凹部６に隣接した両端部の表面と裏面、及び他のリ
ード７、８の各表面と裏面を挟み、且つ前記リード１の
凹部６の下面が露出すると共に該絶縁枠５０の下面が該
凹部６の下面と同一面または該凹部６の下面より上方に
位置するように例えば射出成形法によって形成されてい
る。The insulating frame 50 is made of, for example, a polycarbonate resin or an epoxy resin, and the semiconductor laser device 14 is provided.
Of the lead 1 sandwiches the front and back surfaces of both ends adjacent to the recess 6 of the lead 1 and the front and back surfaces of the other leads 7 and 8 so as to expose the emission surface of the lead 1. Is formed by, for example, an injection molding method so that the lower surface of the recess 6 is exposed and the lower surface of the insulating frame 50 is located on the same plane as the lower surface of the recess 6 or above the lower surface of the recess 6.
【００１６】斯る構造の半導体レーザ装置は、各リード
１、７、８が絶縁枠５０にて挟持されるので、機械的強
度に優れ、且つ半導体レーザ素子１４の下側にあるリー
ド１の凹部６の下面を露出させているので、放熱が十分
に行われ、更にこの下面と別の放熱用板等と熱伝導的に
結合させ易く、より十分な放熱が行える。In the semiconductor laser device having such a structure, since the leads 1, 7 and 8 are sandwiched by the insulating frame 50, the mechanical strength is excellent and the recess of the lead 1 below the semiconductor laser element 14 is provided. Since the lower surface of 6 is exposed, heat can be sufficiently dissipated, and this lower surface can be easily thermally conductively coupled to another heat dissipating plate or the like, and more sufficient heat can be dissipated.
【００１７】尚、上述では、半導体レーザ素子１４をヒ
ートシンクを兼ねた受光素子９上にに設置したが、半導
体レーザ素子１４を受光素子の前方にヒートシンクを介
してリード１上の凹部６に設置した構造でもよい。In the above description, the semiconductor laser element 14 is installed on the light receiving element 9 which also functions as a heat sink, but the semiconductor laser element 14 is installed in the recess 6 on the lead 1 in front of the light receiving element via the heat sink. It may be a structure.
【００１８】また、上述ではリード１の凹部６の両端部
が絶縁枠５０より露出してなる所謂フインを有する構造
であるが、この露出した部分を取り除いた構造であって
もよい。Further, in the above, the structure has a so-called fin in which both ends of the recess 6 of the lead 1 are exposed from the insulating frame 50, but a structure in which the exposed part is removed may be used.
【００１９】[0019]
【発明の効果】本発明の半導体レーザ装置は、各リード
を絶縁枠にて挟持すると共に半導体レーザ素子の下側に
あるリードの凹部下面を露出させるので、十分な機械的
強度と十分な放熱効果が得られる。According to the semiconductor laser device of the present invention, since each lead is sandwiched by the insulating frame and the lower surface of the recess of the lead under the semiconductor laser element is exposed, sufficient mechanical strength and sufficient heat dissipation effect are obtained. Is obtained.
【図１】本発明の一実施例に係る半導体レーザ装置の上
面図である。FIG. 1 is a top view of a semiconductor laser device according to an embodiment of the present invention.
【図２】上記図１のＡ−Ａ断面図である。FIG. 2 is a cross-sectional view taken along the line AA of FIG.
【図３】上記図１のＢ−Ｂ断面図である。FIG. 3 is a sectional view taken along line BB of FIG.
【図４】上記図１の半導体レーザ装置に用いられている
リードの上面図である。FIG. 4 is a top view of a lead used in the semiconductor laser device of FIG.
【図５】上記図４のＣ−Ｃ断面図である。5 is a sectional view taken along line CC of FIG.
【図６】従来例の半導体レーザ装置の上面図である。FIG. 6 is a top view of a conventional semiconductor laser device.
【図７】上記図５のＡ−Ａ断面図である。7 is a cross-sectional view taken along the line AA of FIG.
１ リード ６ 凹部 ９ 受光素子 ７ リード ８ リード １４ 半導体レーザ素子 ５０ 絶縁枠 DESCRIPTION OF SYMBOLS 1 lead 6 concave part 9 light receiving element 7 lead 8 lead 14 semiconductor laser element 50 insulating frame
───────────────────────────────────────────────────── フロントページの続き (72)発明者 別所 靖之 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 (72)発明者 吉年 慶一 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 (72)発明者 山口 隆夫 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 (72)発明者 米山 裕文 鳥取県鳥取市南吉方３丁目201番地 鳥取 三洋電機株式会社内 (72)発明者 野一色 慶夫 鳥取県鳥取市南吉方３丁目201番地 鳥取 三洋電機株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yasuyuki Bessho 2-18 Keihan Hondori, Moriguchi City, Osaka Sanyo Electric Co., Ltd. (72) Inventor Keiichi Yoshinichi 2-18 Keihan Hondori, Moriguchi City, Osaka Sanyo Electric Machinery Co., Ltd. (72) Inventor Takao Yamaguchi 2-18 Keihan Hondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Inventor Hirofumi Yoneyama 3-201 Minamiyoshikata, Tottori-shi, Tottori Sanyo Electric Co., Ltd. (72) Inventor Yoshikazu Noichishi, Tottori Prefecture, Tottori City, Minamiyoshikata 3-chome 201 Tottori Sanyo Electric Co., Ltd.
Claims (1)
部を持つ第１リードと、該第１リードの凹部の底面上に
載置された受光素子と、その受光素子に近接して前記凹
部上に配置されかつ前方に出射面を有する半導体レーザ
素子と、前記第１リードと離間しかつ該第１リードの端
子部と平行に配置された第２、第３リードと、前記半導
体レーザ素子の出射面と前記凹部下面を露出し且つ前記
各リードを挟持するように形成された絶縁枠とを具備し
たことを特徴とする半導体レーザ装置。1. A first lead having a concave portion at a front end and a terminal portion at a rear end, a light receiving element mounted on a bottom surface of the concave portion of the first lead, and a light receiving element close to the light receiving element. A semiconductor laser device disposed on the recess and having an emission surface in the front; second and third leads spaced apart from the first lead and arranged in parallel with a terminal portion of the first lead; and the semiconductor laser A semiconductor laser device comprising: an emitting surface of an element; and an insulating frame which exposes the lower surface of the recess and sandwiches the leads.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22714492A JP3101434B2 (en) | 1992-08-26 | 1992-08-26 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22714492A JP3101434B2 (en) | 1992-08-26 | 1992-08-26 | Semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0677604A true JPH0677604A (en) | 1994-03-18 |
| JP3101434B2 JP3101434B2 (en) | 2000-10-23 |
Family
ID=16856182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22714492A Expired - Fee Related JP3101434B2 (en) | 1992-08-26 | 1992-08-26 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3101434B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004146815A (en) * | 2002-09-30 | 2004-05-20 | Sanyo Electric Co Ltd | Light emitting device |
| JP2007012979A (en) * | 2005-07-01 | 2007-01-18 | Mitsubishi Electric Corp | Semiconductor element and method of manufacturing the same |
| US7342599B2 (en) | 2002-12-12 | 2008-03-11 | Fuji Xerox Co., Ltd. | Optical scanner for scanning a laser beam in accordance with an image signal |
| US8791486B2 (en) | 2010-06-01 | 2014-07-29 | Lg Innotek Co., Ltd. | Light emitting device package |
| US9223076B2 (en) | 2011-04-14 | 2015-12-29 | Lg Innotek Co., Ltd. | Semiconductor light emitting device package |
-
1992
- 1992-08-26 JP JP22714492A patent/JP3101434B2/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004146815A (en) * | 2002-09-30 | 2004-05-20 | Sanyo Electric Co Ltd | Light emitting device |
| US7342599B2 (en) | 2002-12-12 | 2008-03-11 | Fuji Xerox Co., Ltd. | Optical scanner for scanning a laser beam in accordance with an image signal |
| JP2007012979A (en) * | 2005-07-01 | 2007-01-18 | Mitsubishi Electric Corp | Semiconductor element and method of manufacturing the same |
| JP4713250B2 (en) * | 2005-07-01 | 2011-06-29 | 三菱電機株式会社 | Semiconductor device and method for manufacturing semiconductor device |
| US8791486B2 (en) | 2010-06-01 | 2014-07-29 | Lg Innotek Co., Ltd. | Light emitting device package |
| US9165912B2 (en) | 2010-06-01 | 2015-10-20 | Lg Innotek Co., Ltd. | Light emitting device package |
| US9418973B2 (en) | 2010-06-01 | 2016-08-16 | Lg Innotek Co., Ltd. | Light emitting device package |
| US9659916B2 (en) | 2010-06-01 | 2017-05-23 | Lg Innotek Co., Ltd. | Light emitting device package |
| US9991241B2 (en) | 2010-06-01 | 2018-06-05 | Lg Innotek Co., Ltd. | Light emitting device package |
| US10283491B2 (en) | 2010-06-01 | 2019-05-07 | Lg Innotek Co., Ltd | Light emitting device package |
| US10541235B2 (en) | 2010-06-01 | 2020-01-21 | Lg Innotek Co., Ltd. | Light emitting device package |
| US9223076B2 (en) | 2011-04-14 | 2015-12-29 | Lg Innotek Co., Ltd. | Semiconductor light emitting device package |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3101434B2 (en) | 2000-10-23 |
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