JP3213378B2 - Semiconductor laser device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device in which an exit beam can be easily focused.

[0002]

2. Description of the Related Art In recent years, many improvements have been made to semiconductor laser devices.
FIG. 6 shows a semiconductor laser device disclosed in Japanese Unexamined Patent Publication (Kokai) No. 6-No.
In FIG. 6, a column 32 is fixed on a stem 31, and a submount 33 and a semiconductor laser element 34 are fixed on the column 32 in this order. A mounting table 35 and a light receiving element 36 are sequentially fixed on the stem 31. A glass 38 is fixed below the opening of the case 37.

[0003]

However, in the above-described semiconductor laser device, the temperature of the semiconductor laser element 34 becomes high. Therefore, in order to dissipate the heat, the stem 31, the columnar body 32 and the submount 32 made of an expensive material are used. 33 are used. Further, since the light emitted from the semiconductor laser element 34 is scattered by irregularities on the surface of the glass 38, there is a disadvantage that the emitted beam is difficult to stop. Further, in order to prevent malfunctions due to dew condensation caused by atmospheric moisture on the light receiving element 36, the glass 38 is fixed while the nitrogen 39 is sealed in the case 37. Therefore, there is a disadvantage that the manufacturing time is long. Therefore, the present invention has been made in view of the above-mentioned disadvantages, and an object of the present invention is to provide a semiconductor laser device which is inexpensive, easy to focus an outgoing beam, and easy to manufacture.

[0004]

According to a first aspect of the present invention, there is provided a semiconductor laser device comprising: a plurality of leads; and a semiconductor laser device directly mounted on the leads via a silver paste. And a resin insulating frame which is provided in a plane U-shape so as to expose the emission surface of the semiconductor laser element and is formed so as to sandwich the front and back surfaces of the plurality of leads. According to a second aspect of the present invention, there is provided a semiconductor laser device that exposes a plurality of leads, a semiconductor laser element and a light receiving element mounted on the leads, and an emission surface of the semiconductor laser element. A resin insulating frame formed in a plane U-shape and sandwiching the front and back surfaces of the plurality of leads, and the light receiving element from a rear surface of the semiconductor laser element so as to expose the emission surface of the semiconductor laser element. And a light-transmitting resin formed so as to integrally cover the

[0005]

According to the semiconductor laser device of the present invention, the semiconductor laser element is fixed via the silver paste whose operating temperature is lower than that of the solder, so that the resin insulating frame can be prevented from being deformed and the solder is used. Workability can be improved as compared with the case. Further, the silver paste has a lower thermal conductivity than the solder, but since the semiconductor laser element is directly mounted on the lead via the silver paste, heat radiation characteristics can be secured. Further, since the insulating frame is made of a resin formed in a flat U-shape and sandwiching the front and back surfaces of the plurality of leads, the insulating frame can hold the plurality of leads firmly and, after holding the leads, the semiconductor laser device. Can be secured when placing the device. In addition, the number of components can be reduced, so that the size can be reduced and the cost can be reduced. In addition, the semiconductor laser device of the present invention includes a light-transmitting resin formed so as to integrally cover the light receiving element from the rear surface of the semiconductor laser element so as to expose the emission surface of the semiconductor laser element. Can be provided in a form that is easy to manufacture. In addition, since an insulating frame made of resin for sandwiching the leads is provided separately from the translucent resin for preventing dew condensation, the insulating frame can be formed before disposing the translucent resin.

[0006]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is a cross-sectional view of the semiconductor laser device according to the present embodiment, and FIG. 2 is a cross-sectional view along AA in FIG. In these figures, the lead 1 has a thickness of 0,
It is formed in a rectangular plate shape of about 1 to 0 and 5 mm. Similarly, the other leads 2 and 3 are made of a material such as metal, and are located apart from and opposite to the lead 1.

[0007] The semiconductor laser element 4 is made of a GaAlAs light emitting layer comprising a linear active layer and a cladding layer sandwiching the active layer. Both ends of the semiconductor laser element 4 are cleaved, and a reflection film is formed thereon. The semiconductor laser element 4 is fixed on the lead 1 via a conductive adhesive such as silver paste or solder so that the emission surface 5 of the semiconductor laser element 4 is located near one side of the lead 1. Conventionally, silver paste and the like cannot be used because of poor heat conduction. However, in this embodiment, even if the semiconductor laser element 4 is fixed on the lead 1 without a submount, heat radiation characteristics can be secured, so that silver paste can be used. Since the use temperature of the silver paste is as low as about 160 ° C., the resin does not deform when the resin is provided on the lead 1. Therefore, compared with the conventional operation of soldering the semiconductor laser element and the submount, the operation is more easily performed by using the silver paste according to the present embodiment.

The light receiving element 6 has, for example, electrodes provided on the front and back surfaces of a silicon-based crystal having a PIN structure. The light receiving element 6 is fixed behind the semiconductor laser element 4, that is, on the lead 1 on the side opposite to the emission surface 5. The insulating frame 7 is made of, for example, a polycarbonate resin or an epoxy resin, and has a U-shape in a plane so as to expose the emission surface 5 of the semiconductor laser device 4 and sandwiches the front surface and the back surface of each of the leads 1 and the other leads 2 and 3. As described above. The insulating frame 7 may be made of alumina ceramic or an insulated metal material.

A thin metal wire 8 is wired so as to connect the surface electrode of the semiconductor laser element 4 to another lead 2, and a thin metal wire 9 is wired so as to connect the surface electrode of the light receiving element 6 to the other lead 3. The translucent resin 10 is made of, for example, epoxy resin or silicon resin, and receives light from at least the vicinity of the rear surface (the end surface opposite to the emission surface 5) of the semiconductor laser device 4 so as to expose the emission surface 5 of the semiconductor laser device 4. It is formed so as to cover the element 6 integrally. These components constitute the semiconductor laser device 11.

Next, a second embodiment of the present invention, which is an improvement of the first embodiment, will be described with reference to FIG. FIG. 3 is a sectional view of the semiconductor laser device according to the present embodiment. In this figure, the insulating frame 12 is formed such that four plane sides surround the periphery of the lead 1 and the other leads 2 and 3 so as to expose the emission surface 5 of the semiconductor laser element 4. The translucent resin 13 is formed so as to cover the semiconductor laser element 4, the light receiving element 6, and the fine metal wires 8 and 9 so as to expose the emission surface 5 of the semiconductor laser element 4 and fill the inside of the insulating frame 12. . By covering the fine metal wires 8 and 9 with the translucent resin 13 as described above, the charged portion is not exposed, so that an electrical short circuit can be prevented.

Next, a third embodiment which is an improvement of the above-described second embodiment will be described with reference to FIGS. FIG. 4 is a cross-sectional view of the semiconductor laser device according to the present embodiment, and FIG.
It is sectional drawing. In these figures, the light receiving element 14 is made of, for example, a silicon-based crystal having a PIN structure and a surface electrode 1.
5 and 16 and a back electrode 17 are provided. The surface electrode 16 is formed in ohmic contact with the P-type diffusion region 18.

The semiconductor laser element 4 is fixed on the surface electrode 15 of the light receiving element 14. The thin metal wires 8, 9, and 19 are wired so as to connect between the surface of the semiconductor laser device and the other lead 2, between the surface electrode 16 and the other lead 3, and between the surface electrode 15 and the lead 1, respectively. Have been. The translucent resin 20 is formed so as to integrally cover the P-type diffusion region 18 of the light receiving element 14 from near the rear surface of the semiconductor laser element 4. By covering with the translucent resin 20 in this way, the light emitted from the rear surface of the semiconductor laser element 4
The light is reflected at the interface between the P-type and the atmosphere and reliably enters the P-type diffusion region 18. Therefore, the amount of received light increases, and the sensitivity of the light receiving element 14 improves. The numbers shown in FIGS. 3 to 5 and the numbers shown in FIGS. 1 and 2 indicate the same parts.

[0013]

As described above, according to the present invention, since the semiconductor laser element is fixed via the silver paste whose operating temperature is lower than that of solder, the deformation of the resin insulating frame can be prevented. In addition, workability can be improved as compared with the case where solder is used. Further, the silver paste has a lower thermal conductivity than the solder, but since the semiconductor laser element is directly mounted on the lead via the silver paste, heat radiation characteristics can be secured. Further, since the insulating frame is made of a resin formed in a flat U-shape and sandwiching the front and back surfaces of the plurality of leads, the insulating frame can hold the plurality of leads firmly and, after holding the leads, the semiconductor laser device. Can be secured when placing the device. In addition, the number of components can be reduced, so that the size can be reduced and the cost can be reduced.

Further, according to the present invention, since the light-transmitting resin formed so as to integrally cover the light-receiving element from the rear surface of the semiconductor laser element so as to expose the emission surface of the semiconductor laser element, dew condensation can be achieved. The structure for prevention can be provided in a form that is easy to manufacture. In addition, since an insulating frame made of resin for sandwiching the leads is provided separately from the translucent resin for preventing dew condensation, the insulating frame can be formed before disposing the translucent resin.

[Brief description of the drawings]

FIG. 1 is a sectional view of a semiconductor laser device according to a first embodiment of the present invention.

FIG. 2 is a sectional view taken along the line AA of FIG.

FIG. 3 is a sectional view of a semiconductor laser device according to a second embodiment of the present invention.

FIG. 4 is a sectional view of a semiconductor laser device according to a third embodiment of the present invention.

FIG. 5 is a sectional view taken along the line BB of FIG. 4;

FIG. 6 is a sectional view of a conventional semiconductor laser device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Lead 4 Semiconductor laser element 5 Emission surface 6,14 Light receiving element 7,12 Insulating frame 10,13,20 Translucent resin

 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-3-27481 (JP, A) JP-A-63-136684 (JP, A) JP-A-2-86184 (JP, A) 45676 (JP, U) Japanese Utility Model 254263 (JP, U) Japanese Utility Model 62-76554 (JP, U)

Claims (2)

(57) [Claims] [1 claim: a plurality of leads, a semiconductor laser device which is placed directly over the silver paste on the leads, the
A semiconductor laser device, comprising: a resin U-shaped frame provided so as to expose the emission surface of the semiconductor laser element in a plane U-shape and sandwiching the front and back surfaces of the plurality of leads. . [2 Claim: a plurality of leads, the semiconductor laser element and the light receiving element placed on said leads, said semiconductor laser
So as to expose the resin-made insulating frame formed to the plane U-shape and sandwiching the front and back surfaces of said plurality of leads so as to expose the exit surface of the element, the pre-Symbol emitting surface of the semiconductor laser element A light-transmitting resin formed so as to integrally cover the light receiving element from the rear surface of the semiconductor laser element.