JPH05327118A - Semiconductor laser device - Google Patents

Abstract

PURPOSE:To obtain a semiconductor laser device at a low cost which is easy to focus an output beam and be manufactured. CONSTITUTION:A semiconductor laser element 4 is mounted on a lead 1, and has a cleaved output surface 5. An insulating frame 7 is formed on the periphery of the lead 1 so as to expose the output surface 5. At least the part from the rear of the semiconductor laser element 4 to a photo detector 6 on the lead 1 is desirably covered with transparent resin 10, so as to expose the output surface 5 of the semiconductor laser element 4.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device in which an emitted beam can be easily focused.

[0002]

2. Description of the Related Art In recent years, many improvements have been made to semiconductor laser devices.
The semiconductor laser device disclosed in Japanese Patent No. 6 is shown in FIG.
In FIG. 6, a columnar body 32 is fixed on the stem 31, and a submount 33 and a semiconductor laser element 34 are sequentially fixed thereon. Further, a mounting table 35 and a light receiving element 36 are sequentially fixed on the stem 31. The glass 38 is fixed under the opening of the case 37.

[0003]

In the above semiconductor laser device, however, since the semiconductor laser element 34 becomes high in temperature, the stem 31, the columnar body 32, and the submount 31 made of an expensive material for radiating the heat are radiated. I am using 33. Since the emitted light from the semiconductor laser element 34 is scattered by the irregularities on the surface of the glass 38, there is a drawback that the emitted beam is difficult to narrow. Further, in order to prevent malfunction due to dew condensation caused by moisture in the atmosphere on the light receiving element 36, the glass 38 is fixed while enclosing nitrogen 39 in the case 37. Therefore, there is a drawback that the manufacturing time becomes long. Therefore, the present invention has been made in view of the above-mentioned drawbacks, and provides a semiconductor laser device which is low in cost, easy to focus an outgoing beam, and easy to manufacture.

[0004]

SUMMARY OF THE INVENTION In order to solve the above problems, the present invention is directed to a semiconductor laser device having an emitting surface which is placed on the lead and cleaved, and a semiconductor laser device having the emitting surface exposed. An insulating frame is formed around the periphery. More preferably, the present invention covers at least the rear surface of the semiconductor laser element and the light receiving element on the lead with a transparent resin so that the emission surface of the semiconductor laser element is exposed.

[0005]

As described above, according to the present invention, since the semiconductor laser device is directly placed on the leads to radiate heat, the conventional stem, columnar portion and submount are not required, and the cost is reduced. Further, since the light is emitted directly from the cleavage plane of the semiconductor laser element, there is no scattering and the emitted beam can be easily narrowed. Further, since the light-receiving element is covered with a light-transmissive resin to prevent dew condensation, manufacturing becomes easier than ever before.

[0006]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described below with reference to FIGS. 1 is a sectional view of a semiconductor laser device according to the present embodiment, and FIG. 2 is a sectional view taken along the line AA of FIG. In these figures, the lead 1 has a thickness of 0 due to a material such as metal,
It is formed in a rectangular plate shape of about 1 to 0, 5 mm. Similarly, the other leads 2 and 3 are also made of a material such as metal, and are located opposite to the lead 1 apart from each other.

The semiconductor laser device 4 is composed of a GaAlAs light emitting layer composed of a linear active layer and a clad layer sandwiching the active layer. Both ends of the semiconductor laser device 4 are cleaved and a reflective film is formed thereon. The semiconductor laser element 4 is fixed onto the lead 1 via a conductive adhesive or solder such as silver paste so that the emission surface 5 of the semiconductor laser element 4 is located near one side of the lead 1. Further, in the past, silver paste and the like could not be used because of poor thermal conductivity. However, in the present embodiment, even if the semiconductor laser element 4 is fixed onto the lead 1 without submounting, the heat dissipation characteristic can be secured, so that the silver paste can be used. Since the use temperature of the silver paste is as low as about 160 ° C., the resin does not deform when the resin is provided on the leads 1. Therefore, as compared with the conventional work of soldering the semiconductor laser element and the submount, the work is easier to fix with the silver paste of this embodiment.

The light receiving element 6 is, for example, an electrode provided on the front surface and the back surface of a silicon crystal having a P-I-N structure. The light receiving element 6 is fixed to the rear of the semiconductor laser element 4, that is, on the lead 1 opposite to the emitting surface 5. The insulating frame 7 is made of, for example, a polycarbonate resin or an epoxy resin, and has a planar U shape so as to expose the emitting surface 5 of the semiconductor laser element 4, and sandwiches the front surface and the back surface of the lead 1 and the other leads 2 and 3. Similarly, it is formed by transfer molding. The insulating frame 7 may be made of alumina ceramic or an insulating metal material.

A thin metal wire 8 is wired so as to connect the surface electrode of the semiconductor laser element 4 and the other lead 2, and a thin metal wire 9 is wired so as to connect the surface electrode of the light receiving element 6 and the other lead 3. The translucent resin 10 is made of, for example, an epoxy resin or a silicon resin, and receives light from at least the vicinity of the rear surface (the end surface opposite to the emission surface 5) of the semiconductor laser element 4 so as to expose the emission surface 5 of the semiconductor laser element 4. It is formed to integrally cover the element 6. The semiconductor laser device 11 is composed of these components.

Next, a second embodiment of the present invention, which is an improvement of the first embodiment described above, will be described with reference to FIG. FIG. 3 is a sectional view of the semiconductor laser device according to the present embodiment. In this figure, the insulating frame 12 is formed so that the plane 4 sides surround the periphery of the lead 1 and the other leads 2 and 3 so as to expose the emitting surface 5 of the semiconductor laser element 4. The translucent resin 13 is formed so as to cover the semiconductor laser element 4, the light receiving element 6 and the thin metal wires 8 and 9 so as to expose the emission surface 5 of the semiconductor laser element 4, and to fill the inside of the insulating frame 12. . By covering the thin metal wires 8 and 9 with the translucent resin 13 as described above, the charging part is not exposed, so that an electrical short circuit can be prevented.

Next, a third embodiment which is an improvement of the above-mentioned second embodiment will be described with reference to FIGS. 4 and 5. 4 is a sectional view of the semiconductor laser device according to the present embodiment, and FIG. 5 is a cross-sectional view of BB of FIG.
FIG. In these figures, the light receiving element 14 is, for example, a silicon-based crystal having a P-I-N structure and a surface electrode 1
5, 16 and the back electrode 17 are provided. The surface electrode 16 is formed in ohmic contact with the P-type diffusion region 18.

The semiconductor laser element 4 is fixed on the surface electrode 15 of the light receiving element 14. The thin metal wires 8, 9, 19 are wired so as to connect between the surface of the semiconductor laser device and the other lead 2, between the surface electrode 16 and the other lead 3, and between the surface electrode 15 and the lead 1, respectively. Has been done. The transparent resin 20 is formed so as to integrally cover the P type diffusion region 18 of the light receiving element 14 from the vicinity of the rear surface of the semiconductor laser element 4. By thus covering with the translucent resin 20, the light emitted from the rear surface of the semiconductor laser element 4 is transmitted through the translucent resin 20.
It is reflected at the interface between the air and the atmosphere and surely enters the P-type diffusion region 18. Therefore, since the amount of light received increases, the sensitivity of the light receiving element 14 improves. For the sake of simplicity, the same numbers as those shown in FIGS. 3 to 5 and those shown in FIGS. 1 and 2 indicate the same parts.

[0013]

As described above, according to the present invention, since the semiconductor laser device is directly mounted on the lead to radiate heat, the conventional stem, columnar body, submount, mounting table and case are not required. Therefore, the cost is about half that of conventional products. Further, since the lead is sandwiched by the insulating frame, a strong structure can be obtained.

Further, since the light is emitted directly from the cleavage surface of the semiconductor laser device, the light emitted from the flat cleavage surface is not scattered and the emitted beam is easily narrowed. Further, since the light-receiving element is covered with a light-transmissive resin to prevent dew condensation, the conventional nitrogen encapsulation process is not required, which facilitates manufacturing.

[Brief description of drawings]

FIG. 1 is a sectional view of a semiconductor laser device according to a first embodiment of the present invention.

FIG. 2 is a sectional view taken along the line AA in FIG.

FIG. 3 is a sectional view of a semiconductor laser device according to a second embodiment of the present invention.

FIG. 4 is a sectional view of a semiconductor laser device according to a third embodiment of the present invention.

5 is a sectional view taken along line BB of FIG.

FIG. 6 is a sectional view of a conventional semiconductor laser device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Lead 4 Semiconductor laser element 5 Emitting surface 6, 14 Light receiving element 7, 12 Insulating frame 10, 13, 20 Translucent resin

Claims (2)

[Claims] 1. A semiconductor laser element having a lead, an emission surface placed on the lead and cleaved, and an insulating frame formed around the lead so as to expose the emission surface of the semiconductor laser element. A semiconductor laser device comprising: 2. A light receiving element is arranged on the lead behind the semiconductor laser element, and at least light is transmitted from the rear surface of the semiconductor laser element to the light receiving element so as to expose the emission surface of the semiconductor laser element. The semiconductor laser device according to claim 1, wherein the semiconductor laser device is covered with a conductive resin.