JPH066784B2 - Thin film production equipment - Google Patents

Thin film production equipment

Info

Publication number
JPH066784B2
JPH066784B2 JP59076681A JP7668184A JPH066784B2 JP H066784 B2 JPH066784 B2 JP H066784B2 JP 59076681 A JP59076681 A JP 59076681A JP 7668184 A JP7668184 A JP 7668184A JP H066784 B2 JPH066784 B2 JP H066784B2
Authority
JP
Japan
Prior art keywords
thin film
upper lid
mask
timing
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59076681A
Other languages
Japanese (ja)
Other versions
JPS60221564A (en
Inventor
正 溝口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shingijutsu Kaihatsu Jigyodan
Original Assignee
Shingijutsu Kaihatsu Jigyodan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shingijutsu Kaihatsu Jigyodan filed Critical Shingijutsu Kaihatsu Jigyodan
Priority to JP59076681A priority Critical patent/JPH066784B2/en
Publication of JPS60221564A publication Critical patent/JPS60221564A/en
Publication of JPH066784B2 publication Critical patent/JPH066784B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、各種金属薄膜の作製装置に関する。TECHNICAL FIELD The present invention relates to an apparatus for producing various metal thin films.

従来の技術 金属薄膜は、素材を真空槽内に置き、真空蒸着あるいは
スパッタリングなどによって基板に付着させて製造され
る。
2. Description of the Related Art A metal thin film is manufactured by placing a material in a vacuum chamber and attaching it to a substrate by vacuum deposition or sputtering.

発明が解決しようとする問題点 この場合、膜厚、組成、構造等の均一性を高めるため、
基板を回転しながら膜作製を行なう必要がある。また、
多数の基板を真空槽内にセットし、真空またはガス雰囲
気を破らずに基板を交換して多数の薄膜を作製すること
ができれば、作業効率の向上と薄膜作製の信頼性の改善
が期待できる。さらに同じように、複数の素材を用い、
基板を移動することにより多層膜を作製することは、新
規材料探索の見地からも可能性に富んだ方法である。
Problems to be Solved by the Invention In this case, in order to enhance the uniformity of film thickness, composition, structure, etc.,
It is necessary to make a film while rotating the substrate. Also,
If a large number of thin films can be formed by setting a large number of substrates in a vacuum chamber and exchanging the substrates without breaking the vacuum or gas atmosphere, improvement in working efficiency and reliability in thin film formation can be expected. In the same way, using multiple materials,
Fabricating a multilayer film by moving the substrate is a method with a lot of potential from the viewpoint of searching for new materials.

問題点を解決するための手段 本発明は以上の要請をすべて満足する装置であって、単
数または複数の薄膜材料発生源を備えた真空槽に円板状
の第1上蓋を回転可能に設け、該第1上蓋に円形の孔を
偏心させて設け、そこに第2上蓋を回転可能に設け、該
第2上蓋には、回転中心より偏心させた位置にて回転お
よび上下動し得る基板ホルダーと、マスクを上下動可能
に取付けたマスク保持具とを、真空槽内に垂下して設
け、薄膜材料発生源と基板との間に開閉可能なシャッタ
ーを設け、第1上蓋および第2上蓋の回転とそれらの時
期、基板ホルダーの回転および上下動とそれらの時期、
マスクの上下動とその時期、およびシャッターの開閉と
その時期を自動制御するマイクロコンピューター装置を
備えてなることを特徴とする薄膜作製装置である。
Means for Solving the Problems The present invention is an apparatus that satisfies all of the above requirements, in which a disk-shaped first upper lid is rotatably provided in a vacuum chamber equipped with one or more thin film material generation sources, A circular hole is eccentrically provided in the first upper lid, and a second upper lid is rotatably provided therein, and the second upper lid has a substrate holder capable of rotating and vertically moving at a position eccentric from a rotation center. , A mask holder to which a mask is attached so as to be movable up and down, is provided so as to hang down in a vacuum chamber, an openable and closable shutter is provided between a thin film material generation source and a substrate, and rotation of the first and second upper lids And their timing, rotation and vertical movement of the board holder and their timing,
A thin film forming apparatus comprising a microcomputer device for automatically controlling the vertical movement of a mask and its timing, and the opening and closing of a shutter and its timing.

実施例 以下、上記本発明を図面に基づいて説明すると、第1図
は実施の一例の断面図で、1は真空槽である。
EXAMPLE The present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of an example of the embodiment, and 1 is a vacuum chamber.

真空槽1内には、単数または複数の薄膜材料発生源2を
備え、その上部には基板ホルダー3を設け、基板4を複
数個取付けるようにする。薄膜材料発生源2の直上には
シャッター5を設け、また、基板ホルダー3の直下にマ
スク6を設けてある。マスク6はマスク保持具7に上下
移動可能に取付けられている。
The vacuum chamber 1 is provided with one or a plurality of thin film material generation sources 2, a substrate holder 3 is provided on the upper portion thereof, and a plurality of substrates 4 are attached. A shutter 5 is provided directly above the thin film material generation source 2, and a mask 6 is provided directly below the substrate holder 3. The mask 6 is attached to a mask holder 7 so as to be vertically movable.

真空槽1の上部には円板状の第1上蓋8を回転可能に設
け、該第1上蓋8には円形の穴9を偏心させて設け、そ
の穴9に第2上蓋10を回転可能に設ける。その第2上蓋
10の中心より偏心させた位置に前述の基板ホルダー3を
上下動可能に設けてある。なお、前述のマスク保持具7
の上端は第2上蓋10に取付けてある。
A disk-shaped first upper lid 8 is rotatably provided on an upper portion of the vacuum chamber 1, and a circular hole 9 is eccentrically provided in the first upper lid 8 and a second upper lid 10 is rotatably provided in the hole 9. Set up. Its second lid
The above-mentioned substrate holder 3 is provided at a position eccentric from the center of 10 so as to be vertically movable. The mask holder 7 described above
The upper end of is attached to the second upper lid 10.

第1上蓋8および第2上蓋10の回転、基板ホルダー3の
回転および上下動、マスク6の上下動、シャッター5の
開閉、およびそれらの時期はマイクロコンピューター装
置11に予め組込まれたプログラムにしたがって、自動的
に制御する。また、上記各部材の回転、上下動、シャッ
ター5の開閉は周知の機構により行うことができる。す
なわち、最近のコンピューター技術の発展に伴い、生産
部門における装置の自動制御をコンピューターにより行
うことはごく普通のことであり、そのためのソフト開発
は容易にできることで、又、それに伴うハードも多彩に
知られており、上述の本発明の動きは、当業者であれば
随時設計できることである。したがって、図面上はマイ
クロモーターとか、動力伝達機構等の細かい設計的なこ
とは省略してある。
The rotation of the first upper lid 8 and the second upper lid 10, the rotation and vertical movement of the substrate holder 3, the vertical movement of the mask 6, the opening and closing of the shutter 5, and their timing are determined according to a program pre-installed in the microcomputer device 11. Control automatically. Further, rotation, vertical movement of the above-mentioned members, and opening / closing of the shutter 5 can be performed by a known mechanism. In other words, with the recent development of computer technology, it is common for computers to automatically control the equipment in the production department, and the software development for that is easy, and the associated hardware is also widely known. The operation of the present invention described above can be designed by those skilled in the art at any time. Therefore, detailed design such as a micromotor and a power transmission mechanism is omitted in the drawing.

薄膜材料発生源2はガン型スパッタソースあるいは蒸発
ボートなどを用い、スパッタリングあるいは真空蒸着技
術を適用し得る。
As the thin film material generation source 2, a gun type sputtering source, an evaporation boat, or the like is used, and a sputtering or vacuum deposition technique can be applied.

かかる薄膜材料発生源2から原子流を発生させ、該原子
流を開かれたシャッター5、マスク6を通して基板ホル
ダー3に到達させ、基板4表面に付着せしめるのである
が、かかる作用は種々の態様で行なうことができる。
An atomic flow is generated from such a thin film material generation source 2, and the atomic flow is made to reach the substrate holder 3 through the opened shutter 5 and mask 6, and is made to adhere to the surface of the substrate 4. Such an action is performed in various modes. Can be done.

第2図はその一例を示すもので、第1上蓋8の中心Pと
第2上蓋10の中心Qとは偏心している。そして、第2上
蓋10には基板ホルダー3がその回転中心RをQ点と偏心
させて設けられ、第1上蓋8および第2上蓋10を回転さ
せてR点がP点と一致するようにマイクロコンピュータ
ー11の指示により調整してある。基板ホルダー3には外
周に沿って多数の基板4をセットしてある。薄膜材料発
生源2は2個あり、それぞれの直上にあけられたマスク
6の穴を通して、順次、または交互に成膜を行ない、単
層または多層膜を作製することができる。また、2つの
薄膜材料発生源2,2の中間位置にマスク3の穴および基
板4の1つをもってくれば、薄膜材料発生源2,2を同時
に作動させて、基板4上に合金薄膜を作製することがで
きる。
FIG. 2 shows an example thereof, and the center P of the first upper lid 8 and the center Q of the second upper lid 10 are eccentric. The substrate holder 3 is provided on the second upper lid 10 with its rotation center R eccentric to the Q point, and the first upper lid 8 and the second upper lid 10 are rotated so that the R point coincides with the P point. Adjusted according to the instructions of the computer 11. A large number of substrates 4 are set on the substrate holder 3 along the outer periphery thereof. There are two thin film material generation sources 2, and a single layer or a multi-layer film can be produced by performing film formation sequentially or alternately through the holes of the mask 6 formed directly above each. Further, if the hole of the mask 3 and one of the substrates 4 are provided at an intermediate position between the two thin film material generation sources 2 and 2, the thin film material generation sources 2 and 2 are simultaneously operated to produce an alloy thin film on the substrate 4. can do.

マスク6は、複数ある基板4のうち成膜を行うもの以外
には、薄膜材料発生源2からの原子流が到達しないよう
にして、基板4の直下の適正距離に位置するよう、マイ
クロコンピューター11の指示によりマスク保持具7に沿
って上下動させる。
The mask 6 is placed at an appropriate distance directly below the substrate 4 so that the atomic flow from the thin film material generation source 2 does not reach, except for the one on which the film is formed among the plurality of substrates 4. Is moved up and down along the mask holder 7.

第3図は第1上蓋と8と第2上蓋10の相対位置を変え
て、基板ホルダー3の回転中心Rを片方の薄膜材料発生
源2の真上にもってきた例である。この場合は基板を回
転しながら薄膜の作製ができるもので均一な成膜を得る
ことができる。
FIG. 3 shows an example in which the relative positions of the first upper lid 8 and the second upper lid 10 are changed, and the rotation center R of the substrate holder 3 is brought directly above one thin film material generation source 2. In this case, a thin film can be produced while rotating the substrate, and a uniform film can be obtained.

第4図は2つの薄膜材料発生源2,2の中間位置に基板ホ
ルダー3の回転中心Rをもってきた例を示す。このと
き、基板4を基板ホルダー3の中心にセットすれば、基
板4を回転しながら、2つの薄膜材料発生源2,2を同時
に働かせることによって、均一な合金薄膜を作製するこ
とができる。また、基板ホルダー3の外周に複数の基板
4をセットして基板ホルダー3を回転させれば、基板4
は交互に2つの薄膜材料発生源2の上にくるので、多層
膜を作製することができる。この場合、マイクロコンピ
ュータ装置11によりパルスモーターを用いて基板ホルダ
ー3の回転を制御すれば、各層の膜厚をそれぞれ制御す
ることが可能である。
FIG. 4 shows an example in which the rotation center R of the substrate holder 3 is located at an intermediate position between the two thin film material generation sources 2, 2. At this time, if the substrate 4 is set at the center of the substrate holder 3, it is possible to produce a uniform alloy thin film by simultaneously operating the two thin film material generation sources 2 while rotating the substrate 4. If a plurality of substrates 4 are set on the outer periphery of the substrate holder 3 and the substrate holder 3 is rotated, the substrates 4
Are alternately placed on the two thin film material generation sources 2, so that a multilayer film can be produced. In this case, if the microcomputer device 11 controls the rotation of the substrate holder 3 using a pulse motor, the film thickness of each layer can be controlled.

以上、代表的な3つの使用例について述べたが、いずれ
のモードの場合でも、マイクロコンピューター装置11に
必要最小限の情報を入力すれば、2つの上蓋の相対位置
を指示し、コントローラを通じてパルスモーターを動か
して、基板ホルダー3の方向、回転のタイミング、スピ
ード、シャッターの開閉のタイミング等を自動的にコン
トロールすることができる。
In the above, three typical usage examples have been described, but in any mode, if the minimum necessary information is input to the microcomputer device 11, the relative position of the two upper lids is instructed and the pulse motor is controlled through the controller. Can be moved to automatically control the direction of the substrate holder 3, the timing of rotation, the speed, the timing of opening and closing the shutter, and the like.

発明の効果 本発明は以上のとおり、同一の真空槽を用い、多数の基
板をセットして、雰囲気を破らずに多数の薄膜を作製す
ることができ、作業能率の向上と薄膜作製の信頼性が改
善されるばかりでなく、同一の真空槽で、種々の態様の
薄膜形成手段を実施することが可能であるから、目的に
適した真空槽を別々に用意する必要がなく、経済的であ
るばかりか、各種の使い方を複合することによって、新
しい構成の薄膜を作製することが可能となる。
EFFECTS OF THE INVENTION As described above, according to the present invention, a large number of substrates can be set using the same vacuum chamber and a large number of thin films can be formed without breaking the atmosphere, which improves work efficiency and reliability of thin film formation. Not only is it improved, but since it is possible to carry out thin film forming means of various aspects in the same vacuum chamber, it is not necessary to separately prepare vacuum chambers suitable for the purpose, which is economical. Not only that, by combining various uses, it becomes possible to fabricate a thin film having a new structure.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の1実施例の断面図、第2ないし第4図
はその使用態様例の平面図である。 1…真空槽、2…薄膜材料発生源、 3…基板ホルダー、4…基板、 5…シャッター、6…マスク、 7…マスク保持具、8…第1上蓋、 9…穴、10…第2上蓋、 11…マイクロコンピュータ装置。
FIG. 1 is a sectional view of one embodiment of the present invention, and FIGS. 2 to 4 are plan views of examples of its usage. DESCRIPTION OF SYMBOLS 1 ... Vacuum tank, 2 ... Thin film material generation source, 3 ... Substrate holder, 4 ... Substrate, 5 ... Shutter, 6 ... Mask, 7 ... Mask holder, 8 ... First upper lid, 9 ... Hole, 10 ... Second upper lid , 11… Microcomputer equipment.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】単数または複数の薄膜材料発生源を備えた
真空槽に円板状の第1上蓋を回転可能に設け、該第1上
蓋に円形の孔を偏心させて設け、そこに第2上蓋を回転
可能に設け、該第2上蓋には、回転中心より偏心させた
位置にて回転および上下動し得る基板ホルダーと、マス
クを上下動可能に取付けたマスク保持具とを、真空槽内
に垂下して設け、薄膜材料発生源と基板との間に開閉可
能なシャッターを設け、第1上蓋および第2上蓋の回転
とそれらの時期、基板ホルダーの回転および上下動とそ
れらの時期、マスクの上下動とその時期、およびシャッ
ターの開閉とその時期を自動制御するマイクロコンピュ
ーター装置を備えてなることを特徴とする薄膜作製装
置。
1. A disk-shaped first upper lid is rotatably provided in a vacuum chamber provided with one or more thin film material generating sources, and a circular hole is eccentrically provided in the first upper lid, and a second hole is provided therein. An upper lid is rotatably provided, and the second upper lid is provided with a substrate holder that can be rotated and moved up and down at a position eccentric from a rotation center, and a mask holder on which a mask is vertically movable. And a shutter that can be opened and closed between the thin film material generation source and the substrate. Rotation of the first and second upper lids and their timing, rotation and vertical movement of the substrate holder and their timing, mask A thin film manufacturing apparatus comprising a microcomputer device for automatically controlling the vertical movement of the shutter and its timing, and the opening and closing of the shutter and its timing.
JP59076681A 1984-04-18 1984-04-18 Thin film production equipment Expired - Lifetime JPH066784B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59076681A JPH066784B2 (en) 1984-04-18 1984-04-18 Thin film production equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59076681A JPH066784B2 (en) 1984-04-18 1984-04-18 Thin film production equipment

Publications (2)

Publication Number Publication Date
JPS60221564A JPS60221564A (en) 1985-11-06
JPH066784B2 true JPH066784B2 (en) 1994-01-26

Family

ID=13612170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59076681A Expired - Lifetime JPH066784B2 (en) 1984-04-18 1984-04-18 Thin film production equipment

Country Status (1)

Country Link
JP (1) JPH066784B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108624840A (en) * 2017-03-22 2018-10-09 浙江师范大学 A kind of coating machine
CN114713754B (en) * 2022-04-13 2023-04-25 山东大学 Surface coating and preparation method, coating tool and bevel gear precision forging die

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4583488A (en) * 1984-03-23 1986-04-22 International Business Machines Corporation Variable axis rotary drive vacuum deposition system

Also Published As

Publication number Publication date
JPS60221564A (en) 1985-11-06

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