JPH04193948A - Film forming device - Google Patents

Abstract

PURPOSE:To increase film forming speed and to miniaturize film forming device by providing plural opening and closing mechanisms per a target between the target and a film forming substrate and attaining intermittent film formation. CONSTITUTION:In the vacuum vessel 1 a shutter consisting of divided rectangular blades 5a1-5a4, 5b1-5b4 is provided between each of targets 4a, 4b and a film forming substrate 3, respectively. In this constitution, while closing the shutters upon the targets 4a, 4b, high voltage is impressed to the targets 4c, 4b to generate plasma. In the case of film formation, each of the rectangular blades 5a1-5a4, 5b1-5b4 is rotated about 90 deg. centering its own one side as the fulcrum. By this method, necessary space for driving the shutter or necessary space for sustaining the opened shutter is reduced and the distance between the substrate 3 and the targets 4a, 4b is also reduced, thus obtaining high speed film formation and miniaturizing the vacuum vessel 1 are attained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a film forming apparatus such as a vapor deposition apparatus and a sputtering apparatus for forming a thin film on a substrate.

[Prior Art] Usually, in a film forming apparatus, a shutter is provided as a mechanism for intermittent film formation between an evaporation source and a substrate when depositing a thin film on a substrate. To remove impurities such as the oxide layer on the target surface, which is the source of evaporation, prior to forming a film.

A pre-sputtering process is performed in which a high voltage is applied to the target to cause plasma discharge while the shutter above the target is kept closed. Pre-sputtering is also performed for the purpose of preventing film formation from other targets when performing sputter film formation from a specific target while maintaining the discharge of a plurality of targets in a multi-source sputtering apparatus. In addition, when performing a reverse sputtering process in the film forming equipment,
A shutter is also used to prevent the deposition source from being contaminated during reverse sputtering.

Conventionally, the opening/closing mechanisms for shutters, etc. for performing this pre-sputtering or for preventing deposition source contamination have been of the type that rotates to open and close like a door using one side of the shutter as a fulcrum, and of the type in which the shutter slides. etc. are known.

FIG. 6 is a sectional view of a sputtering apparatus having a shutter of the former type disclosed in, for example, Japanese Unexamined Patent Publication No. 62-3448. (3) is a substrate on which a film is to be formed, (4a) and (4b) are targets, (5a) and (
5b) is a shutter of an opening/closing mechanism installed above the targets (4a) and (4b), respectively. The shutter (5a) is shown in a closed state, and the shutter (5b) is shown in an open state. To perform pre-sputtering, a high voltage is applied to the target while keeping the shutter on the target closed to cause plasma discharge, and when forming a film, the shutter is opened.

[Problems to be Solved by the Invention] However, in the shutter structure of this conventional example, in order to open the shutter like the shutter (5b), it is necessary to create an operating space for the shutter to open, and also to hold the opened shutter. A space is required between the substrate to be film-formed (3) and the targets (4a) and (4b). Therefore, the distance between the substrate and the target becomes large, the film formation rate becomes slow, the vacuum chamber becomes large, and the exhaust system also requires a large vacuum pump with a large capacity.

In addition, even with the latter type of sliding shutter, when the shutter is slid from above the target to open the shutter, extra space is required to hold the slid shutter inside the vacuum chamber, making the vacuum chamber larger. .

The present invention has been made to solve this problem, and an object of the present invention is to provide a compact film forming apparatus with a high film forming rate.

[Means for Solving the Problems] The film forming apparatus of the present invention includes a vacuum chamber, a substrate to be film-formed provided in the vacuum chamber, a target provided in the vacuum chamber facing the substrate to be film-formed, and this target. It is equipped with a power source that applies a high voltage to deposit a target component on the substrate to be deposited, and a plurality of opening/closing mechanisms per target provided between the target and the substrate to be deposited so as to intermittent film formation. be.

[Operation] In the present invention, by providing a plurality of opening/closing mechanisms per target, the distance between the target substrate and the target can be reduced, and a high deposition rate and miniaturization of the deposition apparatus can be achieved.

[Example] FIG. 1 is a cross-sectional configuration diagram of a sputtering apparatus which is a film forming apparatus according to an example of the present invention, and in the figure (1) is a vacuum chamber,
(2) is a substrate holder with a rotation mechanism, (3) is a substrate on which a film is to be formed, (4a), (4b) are targets, (5a+) to (5a4), (5b+
) to (5ba) are the targets (4aL (4
b) A shutter divided into rectangular blades provided on the top; shutters (5a+) to (5a4) are shown in a closed state, and shutters (5b+) to (5ha) are shown in an open state. (6) is a shutter holder that supports the shutter.

FIGS. 2(a) and 2(b) are perspective views showing closed states (5a+) to (5aa) and open states (5b+) to (5ha) of the shutter in FIG. 1, respectively.

That is, in order to perform bliss sputtering using the film forming apparatus described above, the shutter above the target must be kept closed (see Fig. 2 (a)).
)) A high voltage is applied to the target by a power source (not shown) to cause plasma discharge, and when forming a film, the shutter is opened (Fig. 2 (b)), and the closed shutter is opened. The space required to operate this shutter, or the space required to hold an open shunter, is achieved by rotating each of the rectangular divided blades approximately 90 degrees using one side as a fulcrum. As for the space, it is sufficient that there is a radius of rotation of each divided vane. Therefore, the distance between the substrate and the target can be reduced to obtain a high film formation rate, and the vacuum chamber can be downsized.

FIGS. 3(a) and 3(b) are perspective views of a shutter in a closed state and a shutter in an open state, respectively, relating to a film forming apparatus according to another embodiment of the present invention.

In other words, in the closed state (Fig. 3 (a)), only the ends of each vane overlap, but in order to open it, each vane is moved in parallel, and approximately the entire surface of each vane is overlapped. (Figure 3(b)).

FIGS. 4(a) and 4(b) are perspective views of a shutter in a closed state and a shutter in an open state, respectively, relating to a film forming apparatus according to another embodiment of the present invention.

Each vane has a fan-like shape and is connected to a rotating shaft at its center. That is, the closed state (Fig. 4(a))
In this case, only the ends of each fan-shaped blade plate overlap,
To open this, each vane plate is rotated so that approximately the entire surface of each vane plate overlaps (FIG. 4(b)).

FIGS. 5(a) and 5(b) are perspective views of a shutter in a closed state and a shutter in an open state, respectively, relating to a film forming apparatus according to still another embodiment of the present invention. Each of the blades constituting the shutter is connected to another blade by a hinge at its respective negative side. That is, in the closed state (FIG. 5(a)), the hinge of the connecting portion of the vane is in an open state. To open this shutter, the hinge of the connecting portion is closed and each blade plate is folded so that their entire surfaces overlap (FIG. 5(b)).

In the three other embodiments described above, the space occupied by the shutter can be made smaller than in the conventional shutter mechanism, as in the first embodiment, and by providing these shutters in the film forming apparatus, the object of the present invention can be achieved. What can be achieved is clear.

In the above embodiment, the case of a normal sputtering apparatus is shown, but it goes without saying that other film forming apparatuses such as a vapor deposition apparatus can have similar effects.

Further, in the figures of the above embodiment, the number of shutter divisions is 4 per substrate, but the user can select this value as appropriate depending on the size of the vacuum chamber of the film forming apparatus, the size of the evaporation source, etc.

Further, the shutter shape is not limited to the rectangular or fan-shaped as shown in the figures of the above embodiment, but can be appropriately selected according to the target shape.

In addition, this invention particularly provides a multi-source sputtering apparatus having a plurality of targets, and when each target is provided with a shutter, the space occupied by the shutter is small, so that the opened shutter of one target does not block the upper part of the adjacent target. It is easy to design the device, and it is possible to downsize the device.

Furthermore, it goes without saying that the intended purpose can be achieved even when the embodiments of the present invention are applied to reverse sputtering.

[Effects of the Invention] As explained above, the present invention provides a vacuum chamber, a substrate to be film-formed provided in the vacuum chamber, a target provided in the vacuum chamber opposite to the substrate to be film-formed, and a high voltage applied to the target. By using a power supply that applies a voltage to form a film of the target component on the film-forming substrate and a plurality of opening/closing mechanisms per target provided to intermittent film formation between the target and the film-forming substrate. It is possible to obtain a film forming apparatus that has a high film forming rate and is compact.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional configuration diagram of a film forming apparatus according to an embodiment of the present invention;
FIGS. 2(a) and (b) are perspective views respectively showing the closed and open states of the opening/closing mechanism of a film forming apparatus according to an embodiment of the present invention, and FIGS. 3(a) and (b) teeth,
FIGS. 4(a) and 4(b) are perspective views of a closed rM opening/closing mechanism and an open opening/closing mechanism of a film forming apparatus according to another embodiment of the present invention, respectively. FIGS. 5(a) and 5(b) are perspective views of the opening/closing mechanism in the closed state and the opening/closing mechanism in the open state, respectively, of the film forming apparatus according to still another embodiment of the present invention. FIG. 6 is a perspective view of the opening/closing mechanism in a closed state and the opening/closing mechanism in an open state, and FIG. 6 is a cross-sectional configuration diagram of a conventional film forming apparatus. In the figure, (1) is a vacuum chamber, (3) is a substrate to be film-formed, (
4a) and (4b) are targets, (5a+)~
(5aa) and (5b+) to (5ha) are opening/closing mechanisms. In each figure, the same reference numerals indicate the same or corresponding parts.

Claims (1)

[Claims] A vacuum chamber, a substrate to be deposited in the vacuum chamber, a target provided in the vacuum chamber facing the substrate to be deposited, and applying a high voltage to this target to form a film of the target component on the substrate to be deposited. and a plurality of opening/closing mechanisms per target provided to intermittent film formation between the target and the substrate to be film-formed.